JP2022149423A - 基板処理方法及び基板処理装置 - Google Patents

基板処理方法及び基板処理装置 Download PDF

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Publication number
JP2022149423A
JP2022149423A JP2021051569A JP2021051569A JP2022149423A JP 2022149423 A JP2022149423 A JP 2022149423A JP 2021051569 A JP2021051569 A JP 2021051569A JP 2021051569 A JP2021051569 A JP 2021051569A JP 2022149423 A JP2022149423 A JP 2022149423A
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JP
Japan
Prior art keywords
substrate
liquid
particles
suspension
structures
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Pending
Application number
JP2021051569A
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English (en)
Japanese (ja)
Inventor
孝佳 田中
Takayoshi Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Screen Holdings Co Ltd
Original Assignee
Screen Holdings Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Screen Holdings Co Ltd filed Critical Screen Holdings Co Ltd
Priority to JP2021051569A priority Critical patent/JP2022149423A/ja
Priority to KR1020237029143A priority patent/KR20230135658A/ko
Priority to PCT/JP2022/002647 priority patent/WO2022201830A1/ja
Priority to TW111105187A priority patent/TWI831129B/zh
Publication of JP2022149423A publication Critical patent/JP2022149423A/ja
Pending legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/2605Bombardment with radiation using natural radiation, e.g. alpha, beta or gamma radiation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP2021051569A 2021-03-25 2021-03-25 基板処理方法及び基板処理装置 Pending JP2022149423A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2021051569A JP2022149423A (ja) 2021-03-25 2021-03-25 基板処理方法及び基板処理装置
KR1020237029143A KR20230135658A (ko) 2021-03-25 2022-01-25 기판 처리 방법 및 기판 처리 장치
PCT/JP2022/002647 WO2022201830A1 (ja) 2021-03-25 2022-01-25 基板処理方法及び基板処理装置
TW111105187A TWI831129B (zh) 2021-03-25 2022-02-14 基板處理方法以及基板處理裝置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2021051569A JP2022149423A (ja) 2021-03-25 2021-03-25 基板処理方法及び基板処理装置

Publications (1)

Publication Number Publication Date
JP2022149423A true JP2022149423A (ja) 2022-10-06

Family

ID=83395333

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021051569A Pending JP2022149423A (ja) 2021-03-25 2021-03-25 基板処理方法及び基板処理装置

Country Status (4)

Country Link
JP (1) JP2022149423A (ko)
KR (1) KR20230135658A (ko)
TW (1) TWI831129B (ko)
WO (1) WO2022201830A1 (ko)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10275788A (ja) * 1997-03-31 1998-10-13 Sumitomo Chem Co Ltd 半導体装置の製造方法及び半導体装置の製造装置
CN101610980A (zh) * 2007-02-08 2009-12-23 丰塔纳技术公司 粒子去除方法及化合物
MY165866A (en) * 2011-03-18 2018-05-18 Basf Se Method for manufacturing integrated circuit devices, optical devices, micromachines and mechanical precision devices having patterned material layers with line-space dimensions of 50 nm and less
TW201712752A (zh) * 2015-06-04 2017-04-01 蘭姆研究公司 高深寬比結構之不造成坍陷的乾燥方法
JP6703858B2 (ja) 2016-02-26 2020-06-03 株式会社Screenホールディングス 基板処理装置および基板処理方法
JP6659607B2 (ja) * 2017-03-17 2020-03-04 キオクシア株式会社 テンプレート洗浄方法、及びテンプレート洗浄装置

Also Published As

Publication number Publication date
TW202242981A (zh) 2022-11-01
WO2022201830A1 (ja) 2022-09-29
KR20230135658A (ko) 2023-09-25
TWI831129B (zh) 2024-02-01

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