JP2022099398A - 縦型ウェーハボート - Google Patents
縦型ウェーハボート Download PDFInfo
- Publication number
- JP2022099398A JP2022099398A JP2020213137A JP2020213137A JP2022099398A JP 2022099398 A JP2022099398 A JP 2022099398A JP 2020213137 A JP2020213137 A JP 2020213137A JP 2020213137 A JP2020213137 A JP 2020213137A JP 2022099398 A JP2022099398 A JP 2022099398A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- yttrium
- film
- wafer boat
- wafer support
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims abstract description 44
- 239000004065 semiconductor Substances 0.000 claims abstract description 25
- 229910052727 yttrium Inorganic materials 0.000 claims abstract description 21
- 239000002245 particle Substances 0.000 claims description 38
- 239000010410 layer Substances 0.000 claims description 30
- 239000011247 coating layer Substances 0.000 claims description 15
- 239000000843 powder Substances 0.000 abstract description 17
- 230000003746 surface roughness Effects 0.000 abstract description 8
- 239000011248 coating agent Substances 0.000 abstract description 7
- 238000000576 coating method Methods 0.000 abstract description 7
- 238000010438 heat treatment Methods 0.000 abstract description 6
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 abstract description 5
- 238000005108 dry cleaning Methods 0.000 abstract description 5
- 239000011737 fluorine Substances 0.000 abstract description 5
- 229910052731 fluorine Inorganic materials 0.000 abstract description 5
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 abstract description 4
- JOHWNGGYGAVMGU-UHFFFAOYSA-N trifluorochlorine Chemical compound FCl(F)F JOHWNGGYGAVMGU-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052736 halogen Inorganic materials 0.000 abstract description 2
- 150000002367 halogens Chemical class 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 52
- 229910010271 silicon carbide Inorganic materials 0.000 description 36
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 21
- 238000005229 chemical vapour deposition Methods 0.000 description 12
- 239000007789 gas Substances 0.000 description 12
- 239000006185 dispersion Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 230000007547 defect Effects 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- CHBIYWIUHAZZNR-UHFFFAOYSA-N [Y].FOF Chemical compound [Y].FOF CHBIYWIUHAZZNR-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 229910019655 synthetic inorganic crystalline material Inorganic materials 0.000 description 2
- 229940105963 yttrium fluoride Drugs 0.000 description 2
- RBORBHYCVONNJH-UHFFFAOYSA-K yttrium(iii) fluoride Chemical compound F[Y](F)F RBORBHYCVONNJH-UHFFFAOYSA-K 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000013039 cover film Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000007561 laser diffraction method Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000000790 scattering method Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
本発明の半導体熱処理部材は、サセプタやリングなど半導体製造における熱処理部材であれば適用可能であるが、一実施形態である縦型ウェーハボートを用いて詳細に説明する。
SiC基材で形成されるウェーハ支持面12に1100℃でCVD-SiC膜16を形成した。次に、粒径3μmの粉末イットリアを純水に混合した分散液を噴射器に充填し、図3に示すように、CVD-SiC膜の表面に垂直にノズルを向けて、CVD-SiC膜16の表面に噴霧して、表1に示す厚みを有するイットリア質粉末層14を形成した。
また、ウェーハボート内壁の摩耗を目視で評価した。明確な消耗は確認されず、エッチピットも見られなかった場合は◎(優)とし、表面のわずかな消耗のみで、エッチピットが見られなかった場合を〇(良)とし、表面の顕著な消耗確認され、さらにエッチピットも見られた場合を×(不良)とした。
結果を表1に示す。
イットリア質粉末層14を有さない比較例1と、イットリア質粉末層14に比べて厚いイットリア質被覆層15が形成された比較例4では、イットリア質粉末層14によるアンカー効果が発揮されにくく、デポ膜剥離に起因するパーティクルが発生していた。イットリア質被覆層15の厚みが小さい比較例3では、耐ガスクリーニング性に劣っていた。
11 ウェーハ支持部材
12 ウェーハ支持面
13 支持溝
14 イットリア質粉末層
15 イットリア質被覆層
16 CVD-SiC膜
101 ノズル
102 噴霧器
103 粉末状イットリア水分散液
W ウェーハ
Claims (2)
- 半導体ウェーハ支持部材のウェーハ支持面が、CVD-SiC膜とイットリア質粉末層とを順に備え、さらに
前記イットリア質粉末層をイットリア(Y2O3)質で被覆した層を備えることを特徴とする縦型ウェーハボート。 - 前記イットリア質粉末層の平均粒子径が1~5μmであり、
前記イットリア質被覆層の厚みが10~30μmである
ことを特徴とする請求項1に記載の縦型ウェーハボート。
Priority Applications (1)
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JP2020213137A JP7431489B2 (ja) | 2020-12-23 | 2020-12-23 | 縦型ウェーハボート |
Applications Claiming Priority (1)
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JP2020213137A JP7431489B2 (ja) | 2020-12-23 | 2020-12-23 | 縦型ウェーハボート |
Publications (2)
Publication Number | Publication Date |
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JP2022099398A true JP2022099398A (ja) | 2022-07-05 |
JP7431489B2 JP7431489B2 (ja) | 2024-02-15 |
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JP2020213137A Active JP7431489B2 (ja) | 2020-12-23 | 2020-12-23 | 縦型ウェーハボート |
Country Status (1)
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JP (1) | JP7431489B2 (ja) |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4606121B2 (ja) | 2004-01-29 | 2011-01-05 | 京セラ株式会社 | 耐食膜積層耐食性部材およびその製造方法 |
WO2006023894A2 (en) | 2004-08-24 | 2006-03-02 | Saint-Gobain Ceramics & Plastics, Inc. | Semiconductor processing components and semiconductor processing utilizing same |
JP5051909B2 (ja) | 2007-03-30 | 2012-10-17 | コバレントマテリアル株式会社 | 縦型ウエハボート |
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