JP2022081442A - 支持ユニット及び基板処理装置 - Google Patents
支持ユニット及び基板処理装置 Download PDFInfo
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- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
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Abstract
Description
100 チャンバ
300 支持ユニット
310 チャック
312 チャックステージ
312a 遮断突起
314 ウィンドウ
314a 流出ホール
317 内部空間
320 スピン駆動部
322 中空空間
330 バックノズル部
332 薬液噴射部
334 薬液供給部
336 薬液供給ライン
340 加熱部材
342 ランプ
344 電力供給端子
345 電力供給ライン
360 反射板
370 冷却板
372 冷却流路
373 開口
374 接触部
374a 第1接触部
374b 第2接触部
375 離隔部
380 ガス供給ライン
381 第1ガス供給ライン
382 第1ガス供給源
383 第2ガス供給ライン
384 第2ガス供給源
391 流体供給ライン
392 流体供給源
393 流体排出ライン
400 液供給ユニット
Claims (20)
- 基板を支持する支持ユニットにおいて、
支持された基板に熱エネルギーを伝達する加熱部材と、
前記加熱部材の下部に配置され、前記加熱部材が発生させる熱エネルギーを基板で反射させる反射板と、
前記反射板の下部に配置されて冷却流体が流れる冷却流路が形成された冷却板と、及び
前記反射板、そして前記冷却板の間空間にガスを供給するガス供給ラインを含むことを特徴とする支持ユニット。 - 前記冷却板の上面は、
前記反射板と接触される接触部と、及び
前記反射板と離隔されて前記の間空間を形成する離隔部と、を含むことを特徴とする請求項1に記載の支持ユニット。 - 上部から眺める時、単位面積当たり前記離隔部に対比して前記接触部が占める割合は、
前記冷却板の中央領域より前記冷却板の縁領域でさらに大きいことを特徴とする請求項2に記載の支持ユニット。 - 前記ガス供給ラインは、
前記の間空間に前記ガスを供給する第1ガス供給ラインと、及び
前記冷却板の下部に前記ガスを供給する第2ガス供給ラインと、を含むことを特徴とする請求項1に記載の支持ユニット。 - 前記ユニットは、
スピン駆動部と結合されて回転可能なチャックステージと、及び
前記チャックステージの上部に配置され、前記チャックステージとお互いに組合されて前記加熱部材、前記反射板、そして前記冷却板が配置される内部空間を形成するウィンドウと、を含むことを特徴とする請求項1乃至請求項4のうちでいずれか一つに記載の支持ユニット。 - 前記ウィンドウの側面には、
前記ガス供給ラインが供給する前記ガスが流出される流出ホールが形成されることを特徴とする請求項5に記載の支持ユニット。 - 上部から眺める時、前記チャックステージの縁領域には外部の不純物が前記内部空間に流入されることを遮断する遮断突起が形成されることを特徴とする請求項5に記載の支持ユニット。
- 前記遮断突起は、
上部から眺める時、前記冷却板を取り囲むように提供され、
その上端が前記反射板から離隔されるように提供されることを特徴とする請求項7に記載の支持ユニット。 - 前記スピン駆動部は、
中空空間を有する中空回転軸に提供され、
前記ガス供給ライン、前記冷却流体を前記冷却流路に供給する流体供給ライン、前記冷却流路から前記冷却流体を排出する流体排出ラインのうちで少なくとも何れか一つは前記中空空間に提供されることを特徴とする請求項5に記載の支持ユニット。 - 前記チャックステージ及び前記ウィンドウはお互いに結合されて前記スピン駆動部の回転によって回転されるが、
前記加熱部材、前記反射板、そして前記冷却板は前記チャックステージ及び前記ウィンドウの回転から独立されるように位置することを特徴とする請求項5に記載の支持ユニット。 - 基板を処理する装置において、
基板を支持する支持ユニットと、及び
前記支持ユニットに支持された基板に処理液を供給する液供給ユニットを含み、
前記支持ユニットは、
前記支持ユニットに支持された基板に熱エネルギーを伝達する加熱部材と、
前記加熱部材の下部に配置され、前記加熱部材が発生させる熱エネルギーを基板で反射させる反射板と、及び
前記反射板の下部に配置されて冷却流体が流れる冷却流路が形成された冷却板を含み、
前記冷却板の上面は、
前記反射板と接触される接触部と、及び
前記反射板と離隔されて間空間を形成する離隔部と、を含むことを特徴とする基板処理装置。 - 前記支持ユニットは、
前記の間空間に非活性ガスを供給するガス供給ラインをさらに含むことを特徴とする請求項11に記載の基板処理装置。 - 前記ガス供給ラインは、
前記の間空間に前記非活性ガスを供給する第1ガス供給ラインと、及び
前記冷却板の下部に前記非活性ガスを供給する第2ガス供給ラインを含むことを特徴とする請求項12に記載の基板処理装置。 - 上部から眺める時、単位面積当たり前記離隔部に対比して前記接触部が占める割合は、
前記冷却板の中央領域より前記冷却板の縁領域でさらに大きいことを特徴とする請求項11乃至請求項13のうちでいずれか一つに記載の基板処理装置。 - 前記ユニットは、
スピン駆動部と結合されて回転可能なチャックステージと、及び
前記チャックステージの上部に配置され、前記チャックステージとお互いに組合されて前記加熱部材、前記反射板、そして前記冷却板が配置される内部空間を形成するウィンドウを含むことを特徴とする請求項11乃至請求項13のうちでいずれか一つに記載の基板処理装置。 - 前記ウィンドウの側面には、
前記ガス供給ラインが供給する前記非活性ガスが流出される流出ホールが形成されることを特徴とする請求項15に記載の基板処理装置。 - 上部から眺める時、前記チャックステージの縁領域には外部の不純物が前記内部空間に流入されることを遮断する遮断突起が形成されることを特徴とする請求項16に記載の基板処理装置。
- 基板を処理する装置において、
処理空間を有するチャンバと、
前記処理空間で基板を支持、そして回転させる支持ユニットと、及び
前記支持ユニットに支持された基板に処理液を供給する液供給ユニットを含み、
前記支持ユニットは、
スピン駆動部と結合されて回転可能なチャックステージと、
前記チャックステージの上部に配置され、前記チャックステージとお互いに組合されて内部空間を形成する透明な石英ウィンドウと、
前記内部空間に配置され、前記支持ユニットに支持された基板に熱エネルギーを伝達する加熱部材と、
前記加熱部材の下部に配置され、前記加熱部材が発生させる熱エネルギーを前記支持ユニットに支持された基板で反射させる反射板と、
前記反射板の下部に配置されて冷却流体が流れる冷却流路が形成された冷却板と、及び
前記反射板、そして前記冷却板の間空間に非活性ガスを供給するガス供給ラインを含み、
前記冷却板の上面は、
前記反射板と接触される接触部と、及び
前記反射板と離隔されて前記の間空間を形成する離隔部を含む基板処理装置。 - 前記加熱部材は、
複数で提供されるが、それぞれリング形状を有するように提供され、
それぞれの前記加熱部材に電力を伝達する電力供給端子は、
前記冷却板に設置されることを特徴とする請求項18に記載の基板処理装置。 - 前記ウィンドウの側面には、
前記ガス供給ラインが供給する前記非活性ガスが流出される流出ホールが形成され、
上部から眺める時、前記チャックステージの縁領域には、
外部の不純物が前記内部空間に流入されることを遮断する遮断突起が形成されるが、
前記遮断突起は、
上部から眺める時、前記冷却板を取り囲むように提供され、
その上端が前記反射板から離隔されるように提供されることを特徴とする請求項18または請求項19に記載の基板処理装置。
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JP2003045817A (ja) * | 2001-07-27 | 2003-02-14 | Dainippon Screen Mfg Co Ltd | 基板の熱処理装置 |
JP2008166706A (ja) * | 2006-12-14 | 2008-07-17 | Applied Materials Inc | 副処理平面を使用する急速伝導冷却 |
US20160013079A1 (en) * | 2014-07-11 | 2016-01-14 | Semes Co., Ltd. | Apparatus for treating substrate |
JP2019009368A (ja) * | 2017-06-28 | 2019-01-17 | 株式会社Screenホールディングス | 熱処理装置および熱処理方法 |
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JP2003045817A (ja) * | 2001-07-27 | 2003-02-14 | Dainippon Screen Mfg Co Ltd | 基板の熱処理装置 |
JP2008166706A (ja) * | 2006-12-14 | 2008-07-17 | Applied Materials Inc | 副処理平面を使用する急速伝導冷却 |
US20160013079A1 (en) * | 2014-07-11 | 2016-01-14 | Semes Co., Ltd. | Apparatus for treating substrate |
JP2019009368A (ja) * | 2017-06-28 | 2019-01-17 | 株式会社Screenホールディングス | 熱処理装置および熱処理方法 |
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