JP2022071391A - 駆動装置 - Google Patents
駆動装置 Download PDFInfo
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- 238000001514 detection method Methods 0.000 claims abstract description 44
- 238000011084 recovery Methods 0.000 abstract description 15
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- 238000000034 method Methods 0.000 description 4
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
- H03K17/042—Modifications for accelerating switching by feedback from the output circuit to the control circuit
- H03K17/04206—Modifications for accelerating switching by feedback from the output circuit to the control circuit in field-effect transistor switches
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0003—Details of control, feedback or regulation circuits
- H02M1/0009—Devices or circuits for detecting current in a converter
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0003—Details of control, feedback or regulation circuits
- H02M1/0029—Circuits or arrangements for limiting the slope of switching signals, e.g. slew rate
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0048—Circuits or arrangements for reducing losses
- H02M1/0051—Diode reverse recovery losses
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
- H03K17/165—Modifications for eliminating interference voltages or currents in field-effect transistor switches by feedback from the output circuit to the control circuit
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B60—VEHICLES IN GENERAL
- B60R—VEHICLES, VEHICLE FITTINGS, OR VEHICLE PARTS, NOT OTHERWISE PROVIDED FOR
- B60R16/00—Electric or fluid circuits specially adapted for vehicles and not otherwise provided for; Arrangement of elements of electric or fluid circuits specially adapted for vehicles and not otherwise provided for
- B60R16/02—Electric or fluid circuits specially adapted for vehicles and not otherwise provided for; Arrangement of elements of electric or fluid circuits specially adapted for vehicles and not otherwise provided for electric constitutive elements
- B60R16/03—Electric or fluid circuits specially adapted for vehicles and not otherwise provided for; Arrangement of elements of electric or fluid circuits specially adapted for vehicles and not otherwise provided for electric constitutive elements for supply of electrical power to vehicle subsystems or for
- B60R16/033—Electric or fluid circuits specially adapted for vehicles and not otherwise provided for; Arrangement of elements of electric or fluid circuits specially adapted for vehicles and not otherwise provided for electric constitutive elements for supply of electrical power to vehicle subsystems or for characterised by the use of electrical cells or batteries
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
- H02M3/158—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
- H02M3/1588—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load comprising at least one synchronous rectifier element
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/539—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters with automatic control of output wave form or frequency
- H02M7/5395—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters with automatic control of output wave form or frequency by pulse-width modulation
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02P—CONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS; CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS
- H02P27/00—Arrangements or methods for the control of AC motors characterised by the kind of supply voltage
- H02P27/04—Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage
- H02P27/06—Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage using dc to ac converters or inverters
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0027—Measuring means of, e.g. currents through or voltages across the switch
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0063—High side switches, i.e. the higher potential [DC] or life wire [AC] being directly connected to the switch and not via the load
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0072—Low side switches, i.e. the lower potential [DC] or neutral wire [AC] being directly connected to the switch and not via the load
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electronic Switches (AREA)
- Power Conversion In General (AREA)
Abstract
Description
図3は、本発明に係る駆動装置の一構成例を示すブロック図である。図3に示す駆動装置1(破線枠を参照)は、プリドライバ11と、電流センスアンプ12と、センス抵抗13及び14と、第1比較器15と、第2比較器16と、ロジック部17を含み、ハイサイドトランジスタ2とローサイドトランジスタ3が外付けされている半導体装置(いわゆるモータドライバIC)である。
図8は、車両の一構成例を示す外観図である。本構成例の車両Xは、バッテリ(本図では不図示)と、バッテリから電力供給を受けて動作する種々の電子機器X11~X18とを搭載している。なお、本図における電子機器X11~X18の搭載位置については、図示の便宜上、実際とは異なる場合がある。
また、本明細書中に開示されている種々の技術的特徴は、上記実施形態のほか、その技術的創作の主旨を逸脱しない範囲で種々の変更を加えることが可能である。すなわち、上記実施形態は、全ての点で例示であって制限的なものではないと考えられるべきであり、本発明の技術的範囲は、上記実施形態の説明ではなく、特許請求の範囲によって示されるものであり、特許請求の範囲と均等の意味及び範囲内に属する全ての変更が含まれると理解されるべきである。例えば本実施形態では、逆電流の検出にノードOUTとノードLoadの電圧の値をもとに比較器を用いているが、ハイサイドトランジスタ2及びローサイドトランジスタ3のソース-ドレイン間電圧をモニターしてもよい。
11 プリドライバ
12 電流センスアンプ
13、14 センス抵抗
15 第1比較器
16 第2比較器
17 ロジック部
2 ハイサイドトランジスタ
3 ローサイドトランジスタ
Claims (11)
- ハイサイドトランジスタとローサイドトランジスタを駆動するように構成されたドライバと、
前記ハイサイドトランジスタに流れる上側電流と前記ローサイドトランジスタに流れる下側電流のうち一方を検出するための第1電流検出部と、
前記第1電流検出部によって検出された前記上側電流または前記下側電流の順方向/逆方向の切り替わりの兆候または切り替わり自体を検出する第1電流判定部と、
前記第1電流判定部の判定結果に応じて前記ハイサイドトランジスタまたは前記ローサイドトランジスタのスルーレートを調整するように前記ドライバを制御するように構成されたスルーレート調整部を備える、駆動装置。 - 前記第1電流検出部は、第1検出抵抗であり、前記第1電流判定部は、前記第1検出抵抗の一端に生じる電圧と前記第1検出抵抗の他端に生じる電圧を比較する第1比較器を含む、請求項1に記載の駆動装置。
- 前記第1検出抵抗は集積化された配線抵抗である、請求項2に記載の駆動装置。
- 前記第1検出抵抗は集積化されず外付けされる、請求項2に記載の駆動装置。
- 前記上側電流または前記下側電流のうち前記第1電流検出部で検出されない他方の電流を検出する第2電流検出部をさらに含む、請求項1から4に記載の駆動装置。
- 前記第2電流検出部によって検出された前記上側電流または前記下側電流の順方向/逆方向の切り替わりの兆候または切り替わり自体を検出する第2電流判定部をさらに備える、請求項5に記載の駆動装置。
- 前記第2電流検出部は、第2検出抵抗であり、前記第2電流判定部は、前記第2検出抵抗の一端に生じる電圧と前記第2検出抵抗の他端に生じる電圧を比較する第2比較器を含む、請求項6に記載の負荷駆動装置。
- 前記第2検出抵抗は集積化された配線抵抗である、請求項7に記載の駆動装置。
- 前記第2検出抵抗は集積化されず外付けされる、請求項7に記載の駆動装置。
- 前記第1電流検出部及び前記第2電流検出部を用いて前記上側電流及び前記下側電流をセンスする電流センスアンプをさらに備える、請求項5から9のいずれか一項に記載の駆動装置。
- 請求項1から10のいずれか一項に記載の駆動装置を備える車両。
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JP2020180325A JP2022071391A (ja) | 2020-10-28 | 2020-10-28 | 駆動装置 |
US17/510,577 US11575307B2 (en) | 2020-10-28 | 2021-10-26 | Drive device |
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JP2020180325A JP2022071391A (ja) | 2020-10-28 | 2020-10-28 | 駆動装置 |
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Cited By (1)
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CN115333338A (zh) * | 2022-07-13 | 2022-11-11 | 浙江大学 | 一种电机控制器负偏压半桥预驱电路 |
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JP2023046512A (ja) * | 2021-09-24 | 2023-04-05 | 三菱電機株式会社 | 半導体装置 |
KR20240032327A (ko) * | 2022-09-02 | 2024-03-12 | 엘지전자 주식회사 | 전원 공급 장치 및 그의 동작 방법 |
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JP2019122116A (ja) | 2017-12-28 | 2019-07-22 | 株式会社ジェイテクト | 電力変換装置 |
US10218258B1 (en) * | 2018-01-09 | 2019-02-26 | Dialog Semiconductor (Uk) Limited | Apparatus and method for driving a power stage |
JP7026531B2 (ja) * | 2018-02-23 | 2022-02-28 | ルネサスエレクトロニクス株式会社 | 半導体装置、半導体システム、及び、制御システム |
US20200195121A1 (en) * | 2018-12-13 | 2020-06-18 | Texas Instruments Incorporated | Dynamically adjustable gate driver for switching devices and related methods |
US11183835B2 (en) * | 2019-07-16 | 2021-11-23 | Infineon Technologies Austria Ag | Short circuit detection and protection for a gate driver circuit and methods of detecting the same using logic analysis |
US10938381B1 (en) * | 2020-04-24 | 2021-03-02 | Qualcomm Incorporated | Area efficient slew-rate controlled driver |
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CN115333338A (zh) * | 2022-07-13 | 2022-11-11 | 浙江大学 | 一种电机控制器负偏压半桥预驱电路 |
CN115333338B (zh) * | 2022-07-13 | 2024-05-17 | 浙江大学 | 一种电机控制器负偏压半桥预驱电路 |
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US11575307B2 (en) | 2023-02-07 |
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Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20241029 |