JP2022051424A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2022051424A JP2022051424A JP2020157903A JP2020157903A JP2022051424A JP 2022051424 A JP2022051424 A JP 2022051424A JP 2020157903 A JP2020157903 A JP 2020157903A JP 2020157903 A JP2020157903 A JP 2020157903A JP 2022051424 A JP2022051424 A JP 2022051424A
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- 230000004048 modification Effects 0.000 description 25
- 238000012986 modification Methods 0.000 description 25
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- 230000005684 electric field Effects 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
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- 230000009467 reduction Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
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- 238000005468 ion implantation Methods 0.000 description 1
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- 238000005259 measurement Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
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Abstract
Description
なお、図面は模式的なものであり、各部分の厚みと幅との関係、部分間の大きさの比率などは、必ずしも現実のものと同一とは限らない。また、同じ部分を表す場合であっても、図面により互いの寸法や比率が異なって表される場合もある。さらに、本明細書と各図において、既出の図に関して説明したものと同様の要素には同一の符号を付して詳細な説明は適宜省略する。
図1は、本実施形態に係る半導体装置を示す平面図である。図2は、図1の領域Aを示す拡大平面図である。図3は、図2に示すB-B’線による断面図である。図1~図3は、保護膜、及び、配線層が省略されている。
第1電極21は、例えばドレイン電極である。第1電極21は、略板形状であり、半導体装置100の下面の例えば全体に形成されている。第1電極21は、例えばアルミニウム(Al)を含んでいる。
図2、図3に示すように、上面視においてMOSFET100mが延びている方向を方向Yとし、方向Yに直交し第1電極21から第2電極22に向かう方向を方向Zとし、方向Yと方向Zに直交する方向を方向Xとする。以下、幅とは、方向Xに沿った長さをいう。
図3に示すように、第1活動領域Dを上下に2等分した場合の第1活動領域Dの第1下部D20と第1上部D30を設定する。図3に示すように、先ず、第1活動領域Dの方向Zの長さを二等分する位置を通り、方向Xに平行な線である2等分線DLを設定する。第1下部D20は、第1活動領域Dにおいて2等分線DLより下の部分となり、第1上部D30は、第1活動領域Dにおいて2等分線DLより上の部分となる。また、第1下部D20と第1上部D30を区画する内部境界面D40は、第1活動領域Dにおいて2等分線DLを含む面である。内部境界面D40の幅は、例えば第1上部D30の下辺の長さと同一であり、例えば第1下部D20の上辺の長さと同一である。
第1活動領域Dは、上面D10の幅が境界面Bdの幅よりも狭い。また、第1活動領域Dは、第1上部D30の幅の平均値が、第1下部D20の幅の平均値よりも小さい。幅の平均値とは、例えば、対象となる部分または構成の幅を、Z方向において均一に離散した箇所において1つずつ測定し、その測定値の総和をその測定箇所の数で割ったものである。
境界面Bdの幅は、第1下部D20の幅の平均値よりも大きい。また、境界面Bdの幅は、内部境界面D40の幅よりも大きい。
また、第2活動領域Eについても第1活動領域Dと同様に設定して説明する。
第2活動領域Rについて、2等分線ELと、第2下部E20及び第2上部E30と、内部境界面E40を設定する。
第2活動領域Eは、上面E10の幅が境界面Beの幅よりも狭い。また、第2活動領域Eは、第2上部E30の幅の平均値が、第2下部E20の幅の平均値よりも小さい。また、第2活動領域Eの上面E10の幅は、第2上部E30の幅の平均値よりも小さく、内部境界面E40の幅の平均値よりも小さい。さらに、境界面Beの幅は、第2下部E20の幅の平均値よりも大きく、内部境界面E40の幅の平均値よりも大きい。
本実施形態に係る半導体装置100は、MOSFET100mにSBD100sを併設している。
先ず、順方向動作時においては、第2電極22に相対的に正の電位、第1電極21に相対的に負の電位が印加される。SBD100sの動作電圧は、MOSFET100mの動作電圧よりも低いため、先ずSBD100sに優先的に電流が流れ、MOSFET100mには電流が流れない。SBD100sにおいては、第1電極21から第1領域U及び第2活動領域Eを通過して第2電極22へ電子が流れる。これにより、寄生ダイオード部100m2の動作が、所定の電圧まで抑制される。この間、寄生ダイオード部100m2による正孔の注入が抑制され、MOSFET100mにおける電子と正孔の両方が流れるバイポーラ動作が抑制される。これにより、半導体装置100は、炭化シリコンを含む半導体部分10の結晶欠陥の拡張が抑えられ、MOSFET100mの順方向電圧とDS間リーク特性等のデバイス特性の劣化を抑止している。
本変形例に係る半導体装置101においては、例えば第1活動領域D1の第1上部D31の幅を更に小さくして、第1下部D21の幅を更に大きくすることにより、第1上部D31と第1下部D21の幅の差を大きくしている。すなわち、第1上部D31の断面形状と第1下部D21の断面形状はそれぞれ略台形であり、第1上部D31の下辺の長さは、第1下部D21の上辺の長さよりも短い。
図4は、本変形例に係る半導体装置のMOSFETを示す拡大断面図である。
図4は、図3と同様な箇所を示しており、保護膜、及び、配線層が省略されている。
図4に示すように、第1活動領域D1において2等分線DLを設定し、第1下部D21及び第1上部D31と内部境界面D41を設定する。
以上の設定を用いて、図4から以下のことが確認できる。
上面D11の幅は、第1上部D31の幅の平均値よりも小さい。また、上面D11の幅は、内部境界面D41の幅よりも小さい。
下面である境界面Bd1の幅は、第1下部D21の幅の平均値よりも大きい。または、境界面Bd1の幅は、内部境界面D41の幅の平均値よりも大きい。
本変形例における第2活動領域は、第1活動領域D1と同様な形状である。
本変形例に係る半導体装置102は、半導体部分10が例えばシリコンSiを含み、第1活動領域D2は、半導体部分10において方向Zに沿って例えば2か所に不純物をイオン注入した後、熱拡散させて形成されている。
図5は、本変形例に係る半導体装置のMOSFETを示す拡大断面図である。
図5は、図3と同様な箇所を示しており、保護膜、及び、配線層が省略されている。
図5に示すように、第1上部D32と第1下部D22は、不純物を熱拡散させて形成しているため、方向Zにおける中央部分の幅が最も広くなっている。すなわち、第1上部D32の断面形状は長円形であり、第1下部D22の断面形状も長円形であり、第1上部D32の最大径は第1下部D22の最大径よりも小さい。図5に示すように、第1上部D32と第1下部D22の内部境界面D42は、くびれ面D62になっている。側方境界面Pd2は、くびれ面D62によってくびれた曲面になっている。
上面D12の幅は、第1上部D32の幅の平均値よりも小さい。また、上面D11の幅は、内部境界面D42がくびれ面D62であるため、内部境界面D42の幅よりも小さいとは一概には言えない。
以上のように、本変形例に係る半導体装置102も、信頼性と動作性能を向上できる。
本変形例に係る半導体装置103は、半導体部分10が例えば炭化シリコンを含み、第1活動領域D3は、例えば、半導体部分10において方向Zに沿って例えば3か所に不純物をイオン注入した後、熱拡散させて形成されている。
図6は、本変形例に係る半導体装置のMOSFETを示す拡大断面図である。
図6は、図3と同様な箇所を示しており、保護膜、及び、配線層が省略されている。
第1活動領域D3は、最も上に位置する上部分の幅が最も狭く、最も下に位置する下部分の幅が最も広く、これらの間に位置する部分の略中心に、2等分線DLが位置している。側方境界面Pd3は、例えば3段の階段形状になっている。
第1活動領域D3は、第1上部D33の幅の平均値が、第1下部D23の幅の平均値よりも小さい。
上面D13の幅は、第1上部D33の幅の平均値よりも小さい。また、上面D13の幅は、内部境界面D43の幅の平均値よりも小さい。
境界面Bd3の幅は、第1下部D23の幅の平均値よりも大きいとは一概には言えない。また、境界面Bd3の幅は、内部境界面D43の幅の平均値よりも大きい。
本変形例においては、第1活動領域D3を、例えばエピタキシャル成長法によって形成してもよい。
本変形例における上記以外の構成、動作、及び効果は、第1実施形態と同様である。
11…n-形ドリフト層
12…p形ベース層
12a…下面
12ad、12ae…端縁
13…n+形ソース層
14…p+形コンタクト層
15…n形半導体層
18…n+形バッファ層
21…第1電極
22…第2電極
23…第3電極
23a…パッド
31…絶縁膜
41…コンタクト
51、52…絶縁層
60…終端絶縁膜
100、101、102、103…半導体装置
100m…MOSFET
100m1…ゲート制御部
100m2…寄生ダイオード部
100s…SBD
Bd、Bd1、Bd2、Bd3、Be…境界面
D、D1、D2、D3…第1活動領域
D10、D11、D12、D13…上面
D30、D31、D32、D33…第1上部
D20、D21、D22、D23…第1下部
D40、D41、D42、D43…内部境界面
D61…切り欠き面
D62…くびれ面
DL…2等分線
E…第2活動領域
E10…上面
E30…第2上部
E20…第2下部
E40・・・内部境界面
EL…2等分線
Pd、Pd1、Pd2、Pd3、Pe…側方境界面
U…第1領域
Ub・・・上面
Claims (9)
- 第1電極と、
第2電極と、
前記第1電極と前記第2電極の間に設けられた第1導電形の第1半導体層と、
前記第1半導体層と前記第2電極との間に設けられた、第2導電形の第2半導体層と、
前記第1半導体層と前記第2電極との間に位置する第1上部と、
前記第1半導体層と前記第1上部との間に位置し、前記第1電極から前記第2電極に向かう第1方向と直交する第2方向における幅の平均値が、前記第1上部の前記第2方向における幅の平均値よりも大きい第1下部と、
を有し、前記第2方向において前記第2半導体層と隣接する第1活動領域と、
前記第2半導体層と前記第2電極との間に設けられ、前記第2電極と電気的に接続された第1導電形の第3半導体層と、
前記第1活動領域、前記第2半導体層、及び、前記第3半導体層と、前記第2電極との間に絶縁膜及び絶縁層を介して設けられた第3電極と、
を備えた半導体装置。 - 前記第1活動領域の前記絶縁膜に接した上面の幅は、前記第1上部の幅の平均値よりも小さい請求項1に記載の半導体装置。
- 前記第1活動領域の前記絶縁膜に接した上面の幅は、前記第1上部と前記第1下部の内部境界面の幅よりも小さい請求項1に記載の半導体装置。
- 前記第1半導体層は、前記第1活動領域および前記第2半導体層の下に位置し、上面が前記第1活動領域及び前記第2半導体層の下面に接した第1領域を更に有し、
前記第1活動領域の前記絶縁膜に接した上面の幅は、前記第1活動領域と前記第1領域との第1境界面の幅よりも小さい請求項1~3のいずれか1つに記載の半導体装置。 - 前記第1領域と前記第2電極との間に設けられ、前記第2方向の反対方向において前記第2半導体層に隣接し、前記第2電極に接した第2活動領域を、更に備えた請求項1~4のいずれか1つに記載の半導体装置。
- 前記第2活動領域は、前記第2電極に接した第2上部と、前記第1領域と前記第2上部との間に位置し、前記第2方向における幅の平均値が、前記第2上部の前記第2方向における幅の平均値よりも大きい第2下部と、を有した請求項5に記載の半導体装置。
- 前記第2活動領域と前記第1領域との第2境界面の幅は、前記第2下部の幅の平均値よりも大きい請求項6に記載の半導体装置。
- 前記第2活動領域と前記第1領域との第2境界面の幅は、前記第2上部と前記第2下部の内部境界面の幅よりも大きい請求項6に記載の半導体装置。
- 第1電極と、
第2電極と、
前記第1電極と前記第2電極の間に設けられた第1導電形の第1半導体層と、
前記第1半導体層と前記第2電極との間に設けられた、第2導電形の第2半導体層と、
前記第1半導体層と前記第2電極の間に設けられ、前記第2電極に接した上部と、
前記第1半導体層と前記上部との間に位置し、前記第1電極から前記第2電極に向かう第1方向と直交する第2方向における幅の平均値が、前記上部の前記第2方向における幅の平均値よりも大きい下部と、
を有し、前記第2方向において前記第2半導体層と隣接する活動領域と、
を備えた半導体装置。
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5742164A (en) * | 1980-08-27 | 1982-03-09 | Hitachi Ltd | Semiconductor device |
JP2006332401A (ja) * | 2005-05-27 | 2006-12-07 | National Institute Of Advanced Industrial & Technology | 炭化ケイ素半導体装置 |
JP2013030618A (ja) * | 2011-07-28 | 2013-02-07 | Rohm Co Ltd | 半導体装置 |
JP2013201450A (ja) * | 2013-05-31 | 2013-10-03 | Rohm Co Ltd | 半導体装置 |
JP2018049951A (ja) * | 2016-09-21 | 2018-03-29 | 株式会社東芝 | 半導体装置 |
JP2019102552A (ja) * | 2017-11-29 | 2019-06-24 | 富士電機株式会社 | ダイオード素子およびダイオード素子の製造方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
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US20100308390A1 (en) * | 2007-12-21 | 2010-12-09 | Nxp B.V. | Memory cell suitable for dram memory |
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JP2013080762A (ja) | 2011-10-03 | 2013-05-02 | Sumitomo Electric Ind Ltd | 炭化珪素半導体装置およびその製造方法 |
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Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5742164A (en) * | 1980-08-27 | 1982-03-09 | Hitachi Ltd | Semiconductor device |
JP2006332401A (ja) * | 2005-05-27 | 2006-12-07 | National Institute Of Advanced Industrial & Technology | 炭化ケイ素半導体装置 |
JP2013030618A (ja) * | 2011-07-28 | 2013-02-07 | Rohm Co Ltd | 半導体装置 |
JP2013201450A (ja) * | 2013-05-31 | 2013-10-03 | Rohm Co Ltd | 半導体装置 |
JP2018049951A (ja) * | 2016-09-21 | 2018-03-29 | 株式会社東芝 | 半導体装置 |
JP2019102552A (ja) * | 2017-11-29 | 2019-06-24 | 富士電機株式会社 | ダイオード素子およびダイオード素子の製造方法 |
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