JP2022042175A - 半導体装置の検査装置、及び、半導体装置の検査方法 - Google Patents
半導体装置の検査装置、及び、半導体装置の検査方法 Download PDFInfo
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Abstract
Description
なお、平均値に対する差分の正負を色分けして表示することも可能である。例えば、平均値よりもピーク位置が小さい場合は青色、平均値よりもピーク位置が大きい場合は赤色と、色分けして表示することにより、被検体40の平均的な面間隔と比べて、赤色の部分は面間隔が伸びる方向に応力が働いており、青色の部分は面間隔が縮む方向に応力が働いていることが一目で識別できる。
Claims (5)
- 表面に所定のパターンが形成された半導体基板である半導体装置を被検体とし、単色X線を所定の入射角度で前記被検体に斜入射させるX線照射部と、
前記単色X線が斜入射されることにより前記被検体から観測される観測X線を、2次元に配置された複数の光検出素子により検出する検出部と、
前記観測X線を光電変換して得られるX線回折像を生成する解析部と、
前記X線照射部を制御して前記被検体に対する前記単色X線の入射角度を変更し、また、前記検出部における前記複数の光検出素子の前記観測X線の検出角度を前記入射角度に応じて変更する制御部と、
を備えた検査装置において、
前記入射角度が変更される都度前記検出部は前記観測X線を検出し、前記解析部は、前記入射角度が変更される都度前記X線回折像を取得し、更に、前記解析部は、前記X線回折像を構成する画素ごとに、複数の前記X線回折像の中から前記観測X線の強度が最大となる前記X線回折像を強度最大画像として特定し、少なくとも前記特定された前記強度最大画像を含むX線回折像の取得条件を前記画素間で比較する、半導体装置の検査装置。 - 前記解析部は、前記画素毎に取得した前記観測X線の最大強度が得られた前記入射角度であるピーク角度を、前記画素間で比較する、請求項1に記載の半導体装置の検査装置。
- 前記解析部は、前記画素毎に算出した前記観測X線の最大強度を含むX線回折のロッキングカーブの半値幅角度を、前記画素間で比較する、請求項1に記載の半導体装置の検査装置。
- 表面に所定のパターンが形成された半導体基板である半導体装置を被検体とし、単色X線を所定の入射角度で前記被検体に斜入射し、
前記単色X線が斜入射されることにより前記被検体から観測される観測X線を、2次元に配置された複数の光検出素子により検出し、
前記観測X線を光電変換して得られるX線回折像を生成する半導体装置の検査方法において、
前記入射角度は可変であり、前記入射角度を変更する都度前記観測X線の検出角度を前記入射角度に応じて変更し、前記入射角度を変更する都度、前記入射角度に応じた前記X線回折像を生成し、更に前記X線回折像を構成する画素ごとに、複数の前記X線回折像の中から前記観測X線の強度が最大となる前記X線回折像を強度最大画像として特定し、少なくとも前記強度最大画像を含むX線回折像の前記画素ごとの取得条件に基づいて前記被検体の応力分布を推定する、半導体装置の検査方法。 - 表面に所定のパターンが形成された半導体基板である半導体装置を被検体とし、単色X線を所定の入射角度で前記被検体に斜入射し、
前記単色X線が斜入射されることにより前記被検体から観測される観測X線を光検出素子により検出し、
前記観測X線を光電変換して得られるX線回折像を生成する半導体装置の検査方法において、
前記入射角度は可変であり、前記入射角度を変更する都度前記観測X線の検出角度を前記入射角度に応じて変更し、前記入射角度を変更する都度、前記入射角度に応じた前記X線回折像を生成し、更に得られた複数の前記X線回折像の中から前記観測X線の強度が最大となる前記X線回折像を強度最大画像として特定し、少なくとも前記強度最大画像を含むX線回折像を事前検査によって標準試料から得られたX線回折像と比較することにより、前記被検体に加えられている応力を推定する、半導体装置の検査方法。
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US3997368A (en) | 1975-06-24 | 1976-12-14 | Bell Telephone Laboratories, Incorporated | Elimination of stacking faults in silicon devices: a gettering process |
JPH06331573A (ja) | 1993-05-25 | 1994-12-02 | Tdk Corp | 2結晶法によるx線トポグラフィ装置及び該装置を用いたx線回折写真撮影方法 |
US5506672A (en) | 1993-09-08 | 1996-04-09 | Texas Instruments Incorporated | System for measuring slip dislocations and film stress in semiconductor processing utilizing an adjustable height rotating beam splitter |
JP3944330B2 (ja) * | 1999-04-12 | 2007-07-11 | 株式会社リガク | X線回折装置及びx線ロッキングカーブの測定方法 |
JP2006058241A (ja) | 2004-08-23 | 2006-03-02 | Fuji Electric Holdings Co Ltd | X線トポグラフィー測定装置、および、その測定方法 |
JP5232373B2 (ja) | 2006-09-28 | 2013-07-10 | 株式会社リガク | 2結晶法x線トポグラフィ装置 |
US8243878B2 (en) * | 2010-01-07 | 2012-08-14 | Jordan Valley Semiconductors Ltd. | High-resolution X-ray diffraction measurement with enhanced sensitivity |
JP5594785B2 (ja) * | 2011-08-08 | 2014-09-24 | 株式会社リガク | X線応力測定装置 |
JPWO2013176037A1 (ja) | 2012-05-22 | 2016-01-12 | 富士電機株式会社 | 半導体装置の製造方法 |
US9850568B2 (en) | 2013-06-20 | 2017-12-26 | Applied Materials, Inc. | Plasma erosion resistant rare-earth oxide based thin film coatings |
JP6154729B2 (ja) | 2013-10-28 | 2017-06-28 | 富士フイルム株式会社 | 圧電体素子の製造方法 |
JP6025211B2 (ja) | 2013-11-28 | 2016-11-16 | 株式会社リガク | X線トポグラフィ装置 |
JP6258260B2 (ja) | 2015-06-04 | 2018-01-10 | 株式会社三共 | 遊技機 |
WO2018012527A1 (ja) | 2016-07-15 | 2018-01-18 | 株式会社リガク | X線検査装置、x線薄膜検査方法およびロッキングカーブ測定方法 |
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