JP2022038099A - アライメント装置およびアライメント方法、ならびに成膜装置および成膜方法 - Google Patents
アライメント装置およびアライメント方法、ならびに成膜装置および成膜方法 Download PDFInfo
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- JP2022038099A JP2022038099A JP2020142409A JP2020142409A JP2022038099A JP 2022038099 A JP2022038099 A JP 2022038099A JP 2020142409 A JP2020142409 A JP 2020142409A JP 2020142409 A JP2020142409 A JP 2020142409A JP 2022038099 A JP2022038099 A JP 2022038099A
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- 238000000034 method Methods 0.000 title claims abstract description 53
- 238000000151 deposition Methods 0.000 title 2
- 230000008021 deposition Effects 0.000 title 1
- 239000000758 substrate Substances 0.000 claims abstract description 323
- 238000003860 storage Methods 0.000 claims description 22
- 230000007246 mechanism Effects 0.000 claims description 10
- 230000008859 change Effects 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 95
- 239000010410 layer Substances 0.000 description 41
- 238000004519 manufacturing process Methods 0.000 description 22
- 230000015572 biosynthetic process Effects 0.000 description 21
- 238000003384 imaging method Methods 0.000 description 18
- 238000012545 processing Methods 0.000 description 14
- 238000012546 transfer Methods 0.000 description 12
- 239000000463 material Substances 0.000 description 11
- 230000008569 process Effects 0.000 description 11
- 238000001816 cooling Methods 0.000 description 8
- 230000005525 hole transport Effects 0.000 description 7
- 230000008020 evaporation Effects 0.000 description 6
- 238000001704 evaporation Methods 0.000 description 6
- 239000002184 metal Substances 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000004364 calculation method Methods 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 230000006870 function Effects 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000012044 organic layer Substances 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000007405 data analysis Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010191 image analysis Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012634 optical imaging Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
- H01L21/682—Mask-wafer alignment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
- H01L21/681—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Electroluminescent Light Sources (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020142409A JP2022038099A (ja) | 2020-08-26 | 2020-08-26 | アライメント装置およびアライメント方法、ならびに成膜装置および成膜方法 |
| KR1020210111593A KR102665607B1 (ko) | 2020-08-26 | 2021-08-24 | 얼라인먼트 장치, 얼라인먼트 방법, 성막 장치, 및 성막 방법 |
| CN202110978988.9A CN114107937B (zh) | 2020-08-26 | 2021-08-25 | 对准装置及对准方法、以及成膜装置及成膜方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020142409A JP2022038099A (ja) | 2020-08-26 | 2020-08-26 | アライメント装置およびアライメント方法、ならびに成膜装置および成膜方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2022038099A true JP2022038099A (ja) | 2022-03-10 |
Family
ID=80440901
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020142409A Pending JP2022038099A (ja) | 2020-08-26 | 2020-08-26 | アライメント装置およびアライメント方法、ならびに成膜装置および成膜方法 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2022038099A (ko) |
| KR (1) | KR102665607B1 (ko) |
| CN (1) | CN114107937B (ko) |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5204739A (en) | 1992-02-07 | 1993-04-20 | Karl Suss America, Inc. | Proximity mask alignment using a stored video image |
| JP4510609B2 (ja) * | 2004-12-21 | 2010-07-28 | 株式会社アルバック | 基板とマスクのアライメント方法および有機薄膜蒸着方法ならびにアライメント装置 |
| JP4809288B2 (ja) * | 2007-05-15 | 2011-11-09 | 株式会社アルバック | 位置合わせ方法、薄膜形成方法 |
| JP5098041B2 (ja) * | 2007-08-31 | 2012-12-12 | 株式会社ブイ・テクノロジー | 露光方法 |
| JP6250999B2 (ja) * | 2013-09-27 | 2017-12-20 | キヤノントッキ株式会社 | アライメント方法並びにアライメント装置 |
| JP2017222009A (ja) | 2016-06-16 | 2017-12-21 | ローランドディー．ジー．株式会社 | 回転軸ユニット、加工装置 |
| KR102550586B1 (ko) * | 2018-10-31 | 2023-06-30 | 캐논 톡키 가부시키가이샤 | 흡착 및 얼라인먼트 방법, 흡착 시스템, 성막 방법, 성막 장치 및 전자 디바이스의 제조 방법 |
| KR102133900B1 (ko) * | 2018-12-27 | 2020-07-15 | 캐논 톡키 가부시키가이샤 | 얼라인먼트 시스템, 성막 장치, 성막 방법, 및 전자 디바이스 제조방법 |
-
2020
- 2020-08-26 JP JP2020142409A patent/JP2022038099A/ja active Pending
-
2021
- 2021-08-24 KR KR1020210111593A patent/KR102665607B1/ko active IP Right Grant
- 2021-08-25 CN CN202110978988.9A patent/CN114107937B/zh active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN114107937B (zh) | 2024-02-02 |
| KR102665607B1 (ko) | 2024-05-10 |
| CN114107937A (zh) | 2022-03-01 |
| KR20220027029A (ko) | 2022-03-07 |
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