JP2022016045A - 載置台装置及び基板処理装置 - Google Patents
載置台装置及び基板処理装置 Download PDFInfo
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- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
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Abstract
Description
ピン孔を備え、基板が載置される載置面を備える載置台と、
前記ピン孔において昇降するリフトピンと、
前記リフトピンを昇降させる昇降機と、を有し、
前記載置台は、その内部において前記載置台を加熱する第1加熱部を備え、
前記リフトピンは、その内部もしくは周囲に前記リフトピンを加熱する第2加熱部を備えている。
はじめに、図1乃至図4を参照して、本開示の実施形態に係る基板処理装置の一例と、第1実施形態に係る載置台装置の一例について説明する。ここで、図1は、実施形態に係る基板処理装置の一例を示す縦断面図である。また、図2は、基板処理装置を構成する、第1実施形態に係る載置台装置の一例を示す縦断面図であり、図3及び図4はいずれも、第1実施形態に係る載置台装置の他例を示す縦断面図である。
次に、図5及び図6を参照して、第2実施形態に係る載置台装置の一例について説明する。ここで、図5は、基板処理装置を構成する、第2実施形態に係る載置台装置の一例を示す縦断面図であり、図6は、第2実施形態に係る載置台装置の他例のうち、リフトピンと導電体とコイルの相対関係を示す模式図である。
次に、図7を参照して、第3実施形態に係る載置台装置の一例について説明する。ここで、図7は、基板処理装置を構成する、第3実施形態に係る載置台装置の一例を示す縦断面図である。
次に、図8を参照して、第4実施形態に係る載置台装置の一例について説明する。ここで、図8は、基板処理装置を構成する、第4実施形態に係る載置台装置の一例を示す縦断面図である。
20:載置台
21e:載置面
31:リフトピン
41:昇降機
26:第1加熱部
29,37b,39,55,56,56A:第2加熱部
50,50A,50B,50C,50D,50E:載置台装置
W:基板(ウエハ)
Claims (9)
- ピン孔を備え、基板が載置される載置面を備える載置台と、
前記ピン孔において昇降するリフトピンと、
前記リフトピンを昇降させる昇降機と、を有し、
前記載置台は、その内部において前記載置台を加熱する第1加熱部を備え、
前記リフトピンは、その内部もしくは周囲に前記リフトピンを加熱する第2加熱部を備えている、載置台装置。 - 前記リフトピンが、その内部に温度センサをさらに備えている、請求項1に記載の載置台装置。
- 前記載置台における前記ピン孔の周囲に、前記第2加熱部が配設されている、請求項1に記載の載置台装置。
- 前記リフトピンの周囲に、前記第2加熱部が取り付けられている、請求項1に記載の載置台装置。
- 複数の前記リフトピンが支持部材に支持され、前記支持部材が前記昇降機に固定されており、
前記支持部材における前記リフトピンの周囲に、前記第2加熱部が配設されている、請求項1に記載の載置台装置。 - 前記第2加熱部が電気抵抗素子により形成されている、請求項1乃至5のいずれか一項に記載の載置台装置。
- 前記第2加熱部と前記温度センサが、共通の電気抵抗素子により形成されている、請求項2、又は請求項2に従属する請求項6に記載の載置台装置。
- 前記第2加熱部が導電体により形成されており、
前記導電体に誘導電流を誘起するコイルが設けられている、請求項1乃至5のいずれか一項に記載の載置台装置。 - 基板を処理する処理容器と、
載置台装置と、
制御装置と、を有し、
前記載置台装置は、
ピン孔を備え、基板が載置される載置台と、
前記ピン孔に挿通されて昇降するリフトピンと、
前記リフトピンを昇降させる昇降機と、を有し、
前記載置台は、その内部において前記載置台を加熱する第1加熱部を備え、
前記リフトピンは、その内部もしくは周囲に前記リフトピンを加熱する第2加熱部を備えており、
前記制御装置により、前記第1加熱部と前記第2加熱部による温調制御が実行される、基板処理装置。
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