JP2021528558A - スパッタリング装置 - Google Patents
スパッタリング装置 Download PDFInfo
- Publication number
- JP2021528558A JP2021528558A JP2020560224A JP2020560224A JP2021528558A JP 2021528558 A JP2021528558 A JP 2021528558A JP 2020560224 A JP2020560224 A JP 2020560224A JP 2020560224 A JP2020560224 A JP 2020560224A JP 2021528558 A JP2021528558 A JP 2021528558A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- stage
- target
- sputtering apparatus
- blocking
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004544 sputter deposition Methods 0.000 title claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 91
- 230000000903 blocking effect Effects 0.000 claims abstract description 64
- 239000000126 substance Substances 0.000 claims abstract description 35
- 230000015572 biosynthetic process Effects 0.000 abstract description 13
- 238000010586 diagram Methods 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 3
- 230000005684 electric field Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- QDZOEBFLNHCSSF-PFFBOGFISA-N (2S)-2-[[(2R)-2-[[(2S)-1-[(2S)-6-amino-2-[[(2S)-1-[(2R)-2-amino-5-carbamimidamidopentanoyl]pyrrolidine-2-carbonyl]amino]hexanoyl]pyrrolidine-2-carbonyl]amino]-3-(1H-indol-3-yl)propanoyl]amino]-N-[(2R)-1-[[(2S)-1-[[(2R)-1-[[(2S)-1-[[(2S)-1-amino-4-methyl-1-oxopentan-2-yl]amino]-4-methyl-1-oxopentan-2-yl]amino]-3-(1H-indol-3-yl)-1-oxopropan-2-yl]amino]-1-oxo-3-phenylpropan-2-yl]amino]-3-(1H-indol-3-yl)-1-oxopropan-2-yl]pentanediamide Chemical compound C([C@@H](C(=O)N[C@H](CC=1C2=CC=CC=C2NC=1)C(=O)N[C@@H](CC(C)C)C(=O)N[C@@H](CC(C)C)C(N)=O)NC(=O)[C@@H](CC=1C2=CC=CC=C2NC=1)NC(=O)[C@H](CCC(N)=O)NC(=O)[C@@H](CC=1C2=CC=CC=C2NC=1)NC(=O)[C@H]1N(CCC1)C(=O)[C@H](CCCCN)NC(=O)[C@H]1N(CCC1)C(=O)[C@H](N)CCCNC(N)=N)C1=CC=CC=C1 QDZOEBFLNHCSSF-PFFBOGFISA-N 0.000 description 1
- 102100024304 Protachykinin-1 Human genes 0.000 description 1
- 101800003906 Substance P Proteins 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000002438 flame photometric detection Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2018-0074857 | 2018-06-28 | ||
| KR1020180074857A KR102412503B1 (ko) | 2018-06-28 | 2018-06-28 | 스퍼터링 장치 |
| PCT/KR2019/005038 WO2020004801A1 (ko) | 2018-06-28 | 2019-04-26 | 스퍼터링 장치 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2021528558A true JP2021528558A (ja) | 2021-10-21 |
Family
ID=68985072
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020560224A Pending JP2021528558A (ja) | 2018-06-28 | 2019-04-26 | スパッタリング装置 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP2021528558A (zh) |
| KR (1) | KR102412503B1 (zh) |
| CN (1) | CN112004956B (zh) |
| TW (1) | TWI818038B (zh) |
| WO (1) | WO2020004801A1 (zh) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63145765A (ja) * | 1986-12-08 | 1988-06-17 | Fuji Electric Co Ltd | 酸化物薄膜の形成方法 |
| JPH04289166A (ja) * | 1991-03-19 | 1992-10-14 | Fujitsu Ltd | スパッタリング装置 |
| JPH09213634A (ja) * | 1996-02-02 | 1997-08-15 | Sony Corp | 薄膜成膜方法、半導体装置の製造方法及び薄膜成膜装置 |
| JPH11195620A (ja) * | 1997-10-29 | 1999-07-21 | Nec Corp | 半導体装置の製造方法及びスパッタ装置 |
| JP2002146527A (ja) * | 2000-11-02 | 2002-05-22 | Nec Kyushu Ltd | スパッタ装置 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06219783A (ja) * | 1993-01-27 | 1994-08-09 | Central Glass Co Ltd | スパツタ法による成膜方法 |
| JPH08239759A (ja) * | 1995-02-28 | 1996-09-17 | Victor Co Of Japan Ltd | 薄膜の製造方法 |
| JP3749383B2 (ja) * | 1998-08-25 | 2006-02-22 | 株式会社昭和真空 | スパッタ装置における膜厚分布制御方法とその装置 |
| JP4128770B2 (ja) * | 2001-11-26 | 2008-07-30 | キヤノンアネルバ株式会社 | スパッタ装置 |
| US20050006223A1 (en) * | 2003-05-07 | 2005-01-13 | Robert Nichols | Sputter deposition masking and methods |
| JP5059430B2 (ja) * | 2007-01-26 | 2012-10-24 | 株式会社大阪真空機器製作所 | スパッタ方法及びスパッタ装置 |
| CN101842512A (zh) * | 2008-12-24 | 2010-09-22 | 佳能安内华股份有限公司 | 溅射设备和成膜方法 |
| JP2010144247A (ja) * | 2009-06-17 | 2010-07-01 | Canon Anelva Corp | スパッタリング装置および成膜方法 |
| KR101964487B1 (ko) * | 2010-03-01 | 2019-04-02 | 가부시키가이샤 알박 | 스퍼터링 장치 |
| JP6224677B2 (ja) * | 2012-05-09 | 2017-11-01 | シーゲイト テクノロジー エルエルシーＳｅａｇａｔｅ Ｔｅｃｈｎｏｌｏｇｙ ＬＬＣ | スパッタリング装置 |
| KR102312568B1 (ko) * | 2014-12-08 | 2021-10-14 | 삼성디스플레이 주식회사 | 스퍼터링 장치 및 이를 이용한 막 형성 방법 |
| KR20160115783A (ko) * | 2015-03-27 | 2016-10-06 | 순천향대학교 산학협력단 | 스퍼터 장치 |
-
2018
- 2018-06-28 KR KR1020180074857A patent/KR102412503B1/ko active IP Right Grant
-
2019
- 2019-04-26 CN CN201980026774.2A patent/CN112004956B/zh active Active
- 2019-04-26 JP JP2020560224A patent/JP2021528558A/ja active Pending
- 2019-04-26 WO PCT/KR2019/005038 patent/WO2020004801A1/ko active Application Filing
- 2019-06-20 TW TW108121409A patent/TWI818038B/zh active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63145765A (ja) * | 1986-12-08 | 1988-06-17 | Fuji Electric Co Ltd | 酸化物薄膜の形成方法 |
| JPH04289166A (ja) * | 1991-03-19 | 1992-10-14 | Fujitsu Ltd | スパッタリング装置 |
| JPH09213634A (ja) * | 1996-02-02 | 1997-08-15 | Sony Corp | 薄膜成膜方法、半導体装置の製造方法及び薄膜成膜装置 |
| JPH11195620A (ja) * | 1997-10-29 | 1999-07-21 | Nec Corp | 半導体装置の製造方法及びスパッタ装置 |
| JP2002146527A (ja) * | 2000-11-02 | 2002-05-22 | Nec Kyushu Ltd | スパッタ装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2020004801A1 (ko) | 2020-01-02 |
| CN112004956B (zh) | 2023-05-12 |
| KR20200001839A (ko) | 2020-01-07 |
| TW202000960A (zh) | 2020-01-01 |
| KR102412503B1 (ko) | 2022-06-23 |
| CN112004956A (zh) | 2020-11-27 |
| TWI818038B (zh) | 2023-10-11 |
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