JP2021528249A5 - - Google Patents

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Publication number
JP2021528249A5
JP2021528249A5 JP2020544023A JP2020544023A JP2021528249A5 JP 2021528249 A5 JP2021528249 A5 JP 2021528249A5 JP 2020544023 A JP2020544023 A JP 2020544023A JP 2020544023 A JP2020544023 A JP 2020544023A JP 2021528249 A5 JP2021528249 A5 JP 2021528249A5
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JP
Japan
Prior art keywords
stack
less
cut line
substrate
laser
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JP2020544023A
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English (en)
Japanese (ja)
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JPWO2019193330A5 (https=
JP7424641B2 (ja
JP2021528249A (ja
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Priority claimed from GB1805624.2A external-priority patent/GB2572608A/en
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Publication of JPWO2019193330A5 publication Critical patent/JPWO2019193330A5/ja
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JP2020544023A 2018-04-03 2019-04-02 薄膜構造のレーザー処理方法 Active JP7424641B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB1805624.2A GB2572608A (en) 2018-04-03 2018-04-03 Laser processing method for thin film structures
GB1805624.2 2018-04-03
PCT/GB2019/050953 WO2019193330A1 (en) 2018-04-03 2019-04-02 Laser processing method for thin film structures

Publications (4)

Publication Number Publication Date
JP2021528249A JP2021528249A (ja) 2021-10-21
JP2021528249A5 true JP2021528249A5 (https=) 2022-04-08
JPWO2019193330A5 JPWO2019193330A5 (https=) 2022-04-08
JP7424641B2 JP7424641B2 (ja) 2024-01-30

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JP2020544023A Active JP7424641B2 (ja) 2018-04-03 2019-04-02 薄膜構造のレーザー処理方法

Country Status (7)

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US (1) US12109651B2 (https=)
EP (1) EP3774161A1 (https=)
JP (1) JP7424641B2 (https=)
KR (1) KR102832158B1 (https=)
CN (1) CN112135707A (https=)
GB (1) GB2572608A (https=)
WO (1) WO2019193330A1 (https=)

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CN114290698B (zh) * 2021-12-24 2023-01-31 华中科技大学 高分子薄膜大深宽比激光加工方法
CN114740615B (zh) * 2022-04-11 2023-06-30 南京邮电大学 一种可调太赫兹衰减器及其制备方法
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