JP2021518575A5 - - Google Patents

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Publication number
JP2021518575A5
JP2021518575A5 JP2020549578A JP2020549578A JP2021518575A5 JP 2021518575 A5 JP2021518575 A5 JP 2021518575A5 JP 2020549578 A JP2020549578 A JP 2020549578A JP 2020549578 A JP2020549578 A JP 2020549578A JP 2021518575 A5 JP2021518575 A5 JP 2021518575A5
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JP
Japan
Prior art keywords
pattern
chemical radiation
photoresist film
projecting
substrate
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JP2020549578A
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English (en)
Japanese (ja)
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JP2021518575A (ja
JP7348456B2 (ja
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Priority claimed from PCT/US2019/022920 external-priority patent/WO2019183056A1/en
Publication of JP2021518575A publication Critical patent/JP2021518575A/ja
Publication of JP2021518575A5 publication Critical patent/JP2021518575A5/ja
Application granted granted Critical
Publication of JP7348456B2 publication Critical patent/JP7348456B2/ja
Active legal-status Critical Current
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JP2020549578A 2018-03-19 2019-03-19 較正されたトリム量を用いて限界寸法を補正するための方法 Active JP7348456B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862645124P 2018-03-19 2018-03-19
US62/645,124 2018-03-19
PCT/US2019/022920 WO2019183056A1 (en) 2018-03-19 2019-03-19 Method for correcting critical dimensions using calibrated trim dosing

Publications (3)

Publication Number Publication Date
JP2021518575A JP2021518575A (ja) 2021-08-02
JP2021518575A5 true JP2021518575A5 (https=) 2022-03-25
JP7348456B2 JP7348456B2 (ja) 2023-09-21

Family

ID=67906068

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2020549578A Active JP7348456B2 (ja) 2018-03-19 2019-03-19 較正されたトリム量を用いて限界寸法を補正するための方法

Country Status (6)

Country Link
US (1) US11360388B2 (https=)
JP (1) JP7348456B2 (https=)
KR (1) KR102767600B1 (https=)
CN (1) CN111919283B (https=)
TW (1) TWI816764B (https=)
WO (1) WO2019183056A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022008031A1 (de) * 2020-07-06 2022-01-13 Ev Group E. Thallner Gmbh Verfahren und vorrichtung zur belichtung einer photosensitiven beschichtung
US12529965B2 (en) 2024-01-30 2026-01-20 Tokyo Electron Limited Method for selective exposure of wafer to corrective irradiation at a per-die level

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3660500B2 (ja) * 1998-04-10 2005-06-15 株式会社東芝 パターン形成方法
US6891627B1 (en) * 2000-09-20 2005-05-10 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension and overlay of a specimen
JP3901997B2 (ja) * 2001-11-27 2007-04-04 富士通株式会社 レジスト材料、レジストパターン及びその製造方法、並びに、半導体装置及びその製造方法
US7294440B2 (en) * 2004-07-23 2007-11-13 International Business Machines Corporation Method to selectively correct critical dimension errors in the semiconductor industry
JP2007334036A (ja) 2006-06-15 2007-12-27 Sekisui Chem Co Ltd 感光性樹脂組成物、これを用いた薄膜パターンの製造方法、電子機器用保護膜、トランジスタ、カラーフィルタ、有機ｅｌ素子、ゲート絶縁膜及び薄膜トランジスタ
SG10201407218XA (en) * 2006-09-01 2015-01-29 Nippon Kogaku Kk Movable Body Drive Method And Movable Body Drive System, Pattern Formation Method And Apparatus, Exposure Method And Apparatus, And Device Manufacturing Method
US8236476B2 (en) * 2008-01-08 2012-08-07 International Business Machines Corporation Multiple exposure photolithography methods and photoresist compositions
US8574810B2 (en) 2009-04-27 2013-11-05 Tokyo Electron Limited Dual tone development with a photo-activated acid enhancement component in lithographic applications
US8574795B2 (en) * 2011-09-23 2013-11-05 Globalfoundries Inc. Lithographic CD correction by second exposure
US8551677B2 (en) * 2011-09-23 2013-10-08 Globalfoundries Inc. Lithographic CD correction by second exposure
CN103034063B (zh) * 2011-09-29 2015-03-04 中芯国际集成电路制造(北京)有限公司 光刻设备
US9645391B2 (en) 2013-11-27 2017-05-09 Tokyo Electron Limited Substrate tuning system and method using optical projection
JP6321189B2 (ja) * 2014-01-27 2018-05-09 東京エレクトロン株式会社 パターン化膜の臨界寸法をシフトするシステムおよび方法
JP2016038468A (ja) * 2014-08-07 2016-03-22 キヤノン株式会社 感光性樹脂層のパターニング方法
US9645495B2 (en) 2014-08-13 2017-05-09 Tokyo Electron Limited Critical dimension control in photo-sensitized chemically-amplified resist
US10338466B2 (en) 2015-04-13 2019-07-02 Tokyo Electron Limited System and method for planarizing a substrate
KR102432661B1 (ko) * 2015-07-07 2022-08-17 삼성전자주식회사 극자외선용 포토레지스트 조성물 및 이를 이용하는 포토레지스트 패턴의 형성 방법
TWI640837B (zh) 2015-12-18 2018-11-11 Tokyo Electron Limited 使用光學投影之基板調整系統及方法
US10048594B2 (en) * 2016-02-19 2018-08-14 Tokyo Electron Limited Photo-sensitized chemically amplified resist (PS-CAR) model calibration
WO2017197279A1 (en) * 2016-05-13 2017-11-16 Tokyo Electron Limited Critical dimension control by use of photo-sensitized chemicals or photo-sensitized chemically amplified resist

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