JP7348456B2 - 較正されたトリム量を用いて限界寸法を補正するための方法 - Google Patents

較正されたトリム量を用いて限界寸法を補正するための方法 Download PDF

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JP7348456B2
JP7348456B2 JP2020549578A JP2020549578A JP7348456B2 JP 7348456 B2 JP7348456 B2 JP 7348456B2 JP 2020549578 A JP2020549578 A JP 2020549578A JP 2020549578 A JP2020549578 A JP 2020549578A JP 7348456 B2 JP7348456 B2 JP 7348456B2
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pattern
substrate
actinic radiation
photoresist film
projecting
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Japanese (ja)
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JP2021518575A (ja
JP2021518575A5 (https=
Inventor
デヴィリアーズ，アントン
ナスマン，ロナルド
スミス，ジェフリー
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/7045—Hybrid exposures, i.e. multiple exposures of the same area using different types of exposure apparatus, e.g. combining projection, proximity, direct write, interferometric, UV, x-ray or particle beam
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0448—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/089—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts using processes for implementing desired shapes or dispositions of the openings, e.g. double patterning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Inorganic Chemistry (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Chemical & Material Sciences (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Length-Measuring Instruments Using Mechanical Means (AREA)
  • Tyre Moulding (AREA)
  • Extrusion Moulding Of Plastics Or The Like (AREA)
JP2020549578A 2018-03-19 2019-03-19 較正されたトリム量を用いて限界寸法を補正するための方法 Active JP7348456B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862645124P 2018-03-19 2018-03-19
US62/645,124 2018-03-19
PCT/US2019/022920 WO2019183056A1 (en) 2018-03-19 2019-03-19 Method for correcting critical dimensions using calibrated trim dosing

Publications (3)

Publication Number Publication Date
JP2021518575A JP2021518575A (ja) 2021-08-02
JP2021518575A5 JP2021518575A5 (https=) 2022-03-25
JP7348456B2 true JP7348456B2 (ja) 2023-09-21

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JP2020549578A Active JP7348456B2 (ja) 2018-03-19 2019-03-19 較正されたトリム量を用いて限界寸法を補正するための方法

Country Status (6)

Country Link
US (1) US11360388B2 (https=)
JP (1) JP7348456B2 (https=)
KR (1) KR102767600B1 (https=)
CN (1) CN111919283B (https=)
TW (1) TWI816764B (https=)
WO (1) WO2019183056A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022008031A1 (de) * 2020-07-06 2022-01-13 Ev Group E. Thallner Gmbh Verfahren und vorrichtung zur belichtung einer photosensitiven beschichtung
US12529965B2 (en) 2024-01-30 2026-01-20 Tokyo Electron Limited Method for selective exposure of wafer to corrective irradiation at a per-die level

Citations (8)

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JP2003162060A (ja) 2001-11-27 2003-06-06 Fujitsu Ltd レジスト材料、レジストパターン及びその製造方法、並びに、半導体装置及びその製造方法
JP2007334036A (ja) 2006-06-15 2007-12-27 Sekisui Chem Co Ltd 感光性樹脂組成物、これを用いた薄膜パターンの製造方法、電子機器用保護膜、トランジスタ、カラーフィルタ、有機ｅｌ素子、ゲート絶縁膜及び薄膜トランジスタ
US20100273107A1 (en) 2009-04-27 2010-10-28 Tokyo Electron Limited Dual tone development with a photo-activated acid enhancement component in lithographic applications
US20130078558A1 (en) 2011-09-23 2013-03-28 Globalfoundries Inc. Lithographic cd correction by second exposure
US20130083302A1 (en) 2011-09-29 2013-04-04 Semiconductor Manufacturing International (Beijing) Corporation Photolithographic apparatus
JP2016038468A (ja) 2014-08-07 2016-03-22 キヤノン株式会社 感光性樹脂層のパターニング方法
JP2017504077A (ja) 2014-01-27 2017-02-02 東京エレクトロン株式会社 パターン化膜の臨界寸法をシフトするシステムおよび方法
JP2017111446A (ja) 2015-12-18 2017-06-22 東京エレクトロン株式会社 光学投射を用いた基板調整システム及び方法

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JP3660500B2 (ja) * 1998-04-10 2005-06-15 株式会社東芝 パターン形成方法
US6891627B1 (en) * 2000-09-20 2005-05-10 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension and overlay of a specimen
US7294440B2 (en) * 2004-07-23 2007-11-13 International Business Machines Corporation Method to selectively correct critical dimension errors in the semiconductor industry
SG10201407218XA (en) * 2006-09-01 2015-01-29 Nippon Kogaku Kk Movable Body Drive Method And Movable Body Drive System, Pattern Formation Method And Apparatus, Exposure Method And Apparatus, And Device Manufacturing Method
US8236476B2 (en) * 2008-01-08 2012-08-07 International Business Machines Corporation Multiple exposure photolithography methods and photoresist compositions
US8551677B2 (en) * 2011-09-23 2013-10-08 Globalfoundries Inc. Lithographic CD correction by second exposure
US9645391B2 (en) 2013-11-27 2017-05-09 Tokyo Electron Limited Substrate tuning system and method using optical projection
US9645495B2 (en) 2014-08-13 2017-05-09 Tokyo Electron Limited Critical dimension control in photo-sensitized chemically-amplified resist
US10338466B2 (en) 2015-04-13 2019-07-02 Tokyo Electron Limited System and method for planarizing a substrate
KR102432661B1 (ko) * 2015-07-07 2022-08-17 삼성전자주식회사 극자외선용 포토레지스트 조성물 및 이를 이용하는 포토레지스트 패턴의 형성 방법
US10048594B2 (en) * 2016-02-19 2018-08-14 Tokyo Electron Limited Photo-sensitized chemically amplified resist (PS-CAR) model calibration
WO2017197279A1 (en) * 2016-05-13 2017-11-16 Tokyo Electron Limited Critical dimension control by use of photo-sensitized chemicals or photo-sensitized chemically amplified resist

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003162060A (ja) 2001-11-27 2003-06-06 Fujitsu Ltd レジスト材料、レジストパターン及びその製造方法、並びに、半導体装置及びその製造方法
JP2007334036A (ja) 2006-06-15 2007-12-27 Sekisui Chem Co Ltd 感光性樹脂組成物、これを用いた薄膜パターンの製造方法、電子機器用保護膜、トランジスタ、カラーフィルタ、有機ｅｌ素子、ゲート絶縁膜及び薄膜トランジスタ
US20100273107A1 (en) 2009-04-27 2010-10-28 Tokyo Electron Limited Dual tone development with a photo-activated acid enhancement component in lithographic applications
US20130078558A1 (en) 2011-09-23 2013-03-28 Globalfoundries Inc. Lithographic cd correction by second exposure
US20130083302A1 (en) 2011-09-29 2013-04-04 Semiconductor Manufacturing International (Beijing) Corporation Photolithographic apparatus
JP2017504077A (ja) 2014-01-27 2017-02-02 東京エレクトロン株式会社 パターン化膜の臨界寸法をシフトするシステムおよび方法
JP2016038468A (ja) 2014-08-07 2016-03-22 キヤノン株式会社 感光性樹脂層のパターニング方法
JP2017111446A (ja) 2015-12-18 2017-06-22 東京エレクトロン株式会社 光学投射を用いた基板調整システム及び方法

Also Published As

Publication number Publication date
TWI816764B (zh) 2023-10-01
CN111919283B (zh) 2024-02-27
CN111919283A (zh) 2020-11-10
JP2021518575A (ja) 2021-08-02
WO2019183056A1 (en) 2019-09-26
US11360388B2 (en) 2022-06-14
US20190287795A1 (en) 2019-09-19
TW201946102A (zh) 2019-12-01
KR102767600B1 (ko) 2025-02-12
KR20200123247A (ko) 2020-10-28

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