JP2021518320A - GaAs材料の単結晶層を製造するための方法、及びGaAs材料の単結晶層をエピタキシャル成長させるための基板 - Google Patents
GaAs材料の単結晶層を製造するための方法、及びGaAs材料の単結晶層をエピタキシャル成長させるための基板 Download PDFInfo
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- 239000000463 material Substances 0.000 title claims abstract description 97
- 239000000758 substrate Substances 0.000 title claims abstract description 96
- 239000013078 crystal Substances 0.000 title claims abstract description 91
- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 54
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 239000002210 silicon-based material Substances 0.000 claims abstract description 32
- 238000000034 method Methods 0.000 claims abstract description 19
- 229910002367 SrTiO Inorganic materials 0.000 claims description 21
- 230000035882 stress Effects 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 7
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- 238000005304 joining Methods 0.000 claims description 5
- 230000008646 thermal stress Effects 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 229910002370 SrTiO3 Inorganic materials 0.000 abstract 1
- 238000010586 diagram Methods 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
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- 239000007924 injection Substances 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
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- 238000004377 microelectronic Methods 0.000 description 2
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- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
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- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
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- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
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- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/42—Gallium arsenide
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- C30B23/02—Epitaxial-layer growth
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
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- C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
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Abstract
Description
Claims (12)
- SrTiO3材料の単結晶シード層(200、200’、2000’)をシリコン材料のキャリア基板(100、100’、100’’)に転写し、続いてGaAs材料の単結晶層(300、300’、3001、3002、3003)をエピタキシャル成長させることを含む、GaAs材料の単結晶層(300、300’、3001、3002、3003)を生成するための方法。
- 前記単結晶シード層(200、200’、2000’)が、10μm未満、好ましくは2μm未満、より好ましくは0.2μm未満の厚さを有する、請求項1に記載の方法。
- シリコン材料の前記キャリア基板(100、100’、100’’)へのSrTiO3材料の前記単結晶シード層(200、200’、2000’)の前記転写が、SrTiO3材料の単結晶基板(20、20’、2001、2002、2003)を前記キャリア基板(100、100’、100’’)に接合するステップ(1’、1’’、1’’’)と、それに続くSrTiO3材料の前記単結晶基板(20、20’、2001、2002、2003)を薄化するステップ(2’、2’’、2’’’)と、を含む、請求項1又は2に記載の方法。
- 前記薄化するステップ(2’’)が、シリコン材料の前記キャリア基板(100、100’、100’’)に転写されることが意図されたSrTiO3材料の前記単結晶基板(20’)の一部(200’)の範囲を定める脆弱化ゾーンの形成を含む、請求項3に記載の方法。
- 前記脆弱化ゾーンの前記形成が、原子及び/又はイオン種を注入すること(0’’)によって得られる、請求項4に記載の方法。
- 前記薄化するステップ(2’’)が、SrTiO3材料の前記単結晶基板(20’)の前記一部(200’)をシリコン材料の前記キャリア基板(100、100’、100’’)に転写するように、前記脆弱化ゾーンで剥離するステップを含み、特に前記剥離するステップが熱応力及び/又は機械的応力の印加を含む、請求項4又は5に記載の方法。
- 前記接合するステップ(1’、1’’、1’’’)が、分子接着ステップである、請求項3〜6のいずれか一項に記載の方法。
- SrTiO3材料の前記単結晶シード層(200、200’、2000’)が、それぞれがシリコン材料の前記キャリア基板(100、100’、100’’)に転写される複数のタイル(2001’、2002’、2003’)の形態である、請求項1〜7のいずれか一項に記載の方法。
- シリコン材料の前記キャリア基板(100、100’、100’’)が、化学的侵襲によって及び/又は機械的応力によって剥離されるように構成された剥離可能な界面(40、40’)を含む、請求項1〜8のいずれか一項に記載の方法。
- シリコン材料のキャリア基板(100、100’、100’’)上に、SrTiO3材料の単結晶シード層(200、200’、2000’)を含むことを特徴とする、GaAs材料の単結晶層(300、300’、3001、3002、3003)をエピタキシャル成長させるための基板。
- SrTiO3材料の前記単結晶シード層(200、200’、2000’)が複数のタイル(2001’、2002’、2003’)の形態で存在する、請求項10に記載のGaAs材料の単結晶層(300、300’、3001、3002、3003)をエピタキシャル成長させるための基板。
- シリコン材料の前記キャリア基板(100、100’、100’’)が、化学的侵襲及び/又は機械的応力によって剥離されるように構成された剥離可能な界面(40、40’)を含む、請求項10又は11に記載のGaAs材料の単結晶層(300、300’、3001、3002、3003)をエピタキシャル成長させるための基板。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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FR1800252 | 2018-03-28 | ||
FR1800252A FR3079534B1 (fr) | 2018-03-28 | 2018-03-28 | Procede de fabrication d'une couche monocristalline de materiau gaas et substrat pour croissance par epitaxie d'une couche monocristalline de materiau gaas |
PCT/IB2019/000207 WO2019186268A1 (fr) | 2018-03-28 | 2019-03-26 | Procédé de fabrication d'une couche monocristalline de matériau gaas et substrat pour croissance par épitaxie d'une couche monocristalline de matériau gaas |
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US (2) | US11549195B2 (ja) |
EP (1) | EP3775330A1 (ja) |
JP (1) | JP7358707B2 (ja) |
CN (1) | CN111954730A (ja) |
FR (1) | FR3079534B1 (ja) |
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FR3079534B1 (fr) * | 2018-03-28 | 2022-03-18 | Soitec Silicon On Insulator | Procede de fabrication d'une couche monocristalline de materiau gaas et substrat pour croissance par epitaxie d'une couche monocristalline de materiau gaas |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6562127B1 (en) * | 2002-01-16 | 2003-05-13 | The United States Of America As Represented By The Secretary Of The Navy | Method of making mosaic array of thin semiconductor material of large substrates |
JP2003523084A (ja) * | 2000-02-10 | 2003-07-29 | モトローラ・インコーポレイテッド | 通信装置 |
JP2004513517A (ja) * | 2000-11-06 | 2004-04-30 | コミツサリア タ レネルジー アトミーク | ターゲット基板に結合される少なくとも一の薄層を備えた積層構造の作製方法 |
JP2004515074A (ja) * | 2000-11-22 | 2004-05-20 | モトローラ・インコーポレイテッド | コンプライアント基板を有する半導体構造物 |
JP2004517472A (ja) * | 2000-11-27 | 2004-06-10 | エス オー イ テク シリコン オン インシュレータ テクノロジース | 基板、特に光学、電子工学または電子光学用基板の製造方法、およびこの製造方法により得られる基板 |
JP2007096330A (ja) * | 2005-09-27 | 2007-04-12 | Philips Lumileds Lightng Co Llc | Iii−v族発光デバイス |
US20150041853A1 (en) * | 2013-08-12 | 2015-02-12 | International Business Machines Corporation | Bonded epitaxial oxide structures for compound semiconductor on silicon substrates |
WO2017046548A1 (fr) * | 2015-09-18 | 2017-03-23 | Soitec | Procede de transfert de paves monocristallins |
CN107785235A (zh) * | 2016-08-31 | 2018-03-09 | 沈阳硅基科技有限公司 | 一种在基板上制造薄膜的方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8178221B2 (en) * | 2000-07-10 | 2012-05-15 | Amit Goyal | {100}<100> or 45°-rotated {100}<100>, semiconductor-based, large-area, flexible, electronic devices |
US8507361B2 (en) * | 2000-11-27 | 2013-08-13 | Soitec | Fabrication of substrates with a useful layer of monocrystalline semiconductor material |
US20030012965A1 (en) * | 2001-07-10 | 2003-01-16 | Motorola, Inc. | Structure and method for fabricating semiconductor structures and devices utilizing the formation of a compliant substrate comprising an oxygen-doped compound semiconductor layer |
AU2008349509B2 (en) | 2008-01-28 | 2013-12-19 | Amit Goyal | Semiconductor-based large-area flexible electronic devices |
FR3041170B1 (fr) | 2015-09-14 | 2018-12-07 | Electricite De France | Systeme et procede pour recharger des appareils electroniques nomades, et adaptateur pour un tel systeme |
FR3079534B1 (fr) * | 2018-03-28 | 2022-03-18 | Soitec Silicon On Insulator | Procede de fabrication d'une couche monocristalline de materiau gaas et substrat pour croissance par epitaxie d'une couche monocristalline de materiau gaas |
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Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003523084A (ja) * | 2000-02-10 | 2003-07-29 | モトローラ・インコーポレイテッド | 通信装置 |
JP2004513517A (ja) * | 2000-11-06 | 2004-04-30 | コミツサリア タ レネルジー アトミーク | ターゲット基板に結合される少なくとも一の薄層を備えた積層構造の作製方法 |
JP2004515074A (ja) * | 2000-11-22 | 2004-05-20 | モトローラ・インコーポレイテッド | コンプライアント基板を有する半導体構造物 |
JP2004517472A (ja) * | 2000-11-27 | 2004-06-10 | エス オー イ テク シリコン オン インシュレータ テクノロジース | 基板、特に光学、電子工学または電子光学用基板の製造方法、およびこの製造方法により得られる基板 |
US6562127B1 (en) * | 2002-01-16 | 2003-05-13 | The United States Of America As Represented By The Secretary Of The Navy | Method of making mosaic array of thin semiconductor material of large substrates |
JP2007096330A (ja) * | 2005-09-27 | 2007-04-12 | Philips Lumileds Lightng Co Llc | Iii−v族発光デバイス |
US20150041853A1 (en) * | 2013-08-12 | 2015-02-12 | International Business Machines Corporation | Bonded epitaxial oxide structures for compound semiconductor on silicon substrates |
WO2017046548A1 (fr) * | 2015-09-18 | 2017-03-23 | Soitec | Procede de transfert de paves monocristallins |
CN107785235A (zh) * | 2016-08-31 | 2018-03-09 | 沈阳硅基科技有限公司 | 一种在基板上制造薄膜的方法 |
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SG11202009529WA (en) | 2020-10-29 |
US20210054528A1 (en) | 2021-02-25 |
CN111954730A (zh) | 2020-11-17 |
US20220364266A1 (en) | 2022-11-17 |
US11976380B2 (en) | 2024-05-07 |
US11549195B2 (en) | 2023-01-10 |
FR3079534B1 (fr) | 2022-03-18 |
JP7358707B2 (ja) | 2023-10-11 |
WO2019186268A1 (fr) | 2019-10-03 |
KR20200136434A (ko) | 2020-12-07 |
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