JP2021516445A - 処理の均一性を改善するための基板ハローの配置 - Google Patents
処理の均一性を改善するための基板ハローの配置 Download PDFInfo
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- 125000001475 halogen functional group Chemical group 0.000 title claims abstract description 135
- 239000000758 substrate Substances 0.000 title claims abstract description 95
- 239000000463 material Substances 0.000 claims abstract description 42
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 239000002775 capsule Substances 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 238000010586 diagram Methods 0.000 abstract 1
- 238000010884 ion-beam technique Methods 0.000 description 8
- 238000005530 etching Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 235000012431 wafers Nutrition 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000008186 active pharmaceutical agent Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000003278 mimic effect Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
- H01L21/682—Mask-wafer alignment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3321—CVD [Chemical Vapor Deposition]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3322—Problems associated with coating
- H01J2237/3323—Problems associated with coating uniformity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3341—Reactive etching
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
[0001] 本願は、「SUBSTRATE HALO ARRANGEMENT FOR IMPROVED PROCESS UNIFORMITY」と題され、2018年3月1日に出願された米国仮特許出願第62/637,164号の優先権を主張するもので、そのすべての内容は参照により本願に組み込まれている。
Claims (15)
- 第1の材料を含み、第1の開孔を画定する外側ハローと、
第2の材料を含み、前記第1の開孔内に少なくとも部分的に配置されるハローリングであって、前記第1の開孔内に同心状に配置された第2の開孔を画定するハローリングと、
を備える基板アセンブリであって、前記ハローリングは内部に基板を収容するように連結される、基板アセンブリ。 - 前記外側ハローが金属を含む、請求項1に記載の基板アセンブリ。
- 前記ハローリングは、シリコンまたは炭化ケイ素を含む、請求項1に記載の基板アセンブリ。
- 前記ハローリングは、外側リングと、前記外側リング内に配置されて前記第2の開孔を画定する内側リングとを備え、前記外側リングは、第1のリング材料を含み、前記内側リングは、前記第1のリング材料とは異なる第2のリング材料を含む、請求項1に記載の基板アセンブリ。
- ファスナアセンブリをさらに備え、前記ファスナアセンブリは、前記外側ハローを前記ハローリングに可逆的に取り付けるように配置される、請求項1に記載の基板アセンブリ。
- 前記ファスナアセンブリは、内蔵型スプリングカプセルアセンブリを備える、請求項5に記載の基板アセンブリ。
- 前記外側ハローは、外側部分とレッジとを備え、前記外側部分は、第1の厚さを有し、前記レッジは、前記第1の厚さ未満の第2の厚さを有し、前記レッジの内側エッジは、前記第1の開孔を画定し、前記レッジは、前記ハローリングと係合するように配置される、請求項1に記載の基板アセンブリ。
- 前記ハローリングに隣接し、前記ハローリングと基板位置との間のギャップ内に配置された背面ギャップリングをさらに備え、前記基板位置は前記第2の開孔内にある、請求項1に記載の基板アセンブリ。
- 基板位置で基板を支持するように配置された基板プラテンと、
前記基板位置の周りに配置されるハローリングと、
第1の材料を含む外側ハローであって、前記ハローリングの周りに配置され、第1の開孔を画定する外側ハローと、
を備える基板ホルダアセンブリであって、前記外側ハローは前記ハローリングと係合するように配置され、
前記ハローリングは、第2の材料を含み、前記第1の開孔内に少なくとも部分的に配置され、前記ハローリングは、前記第1の開孔内に同心状に配置される第2の開孔を画定する、基板ホルダアセンブリ。 - 前記外側ハローは金属を含む、請求項9に記載の基板ホルダアセンブリ。
- 前記ハローリングは、シリコンまたは炭化ケイ素を含む、請求項9に記載の基板ホルダアセンブリ。
- 前記ハローリングは、外側リングと、前記外側リング内に配置され前記第2の開孔を画定する内側リングとを備え、前記外側リングは、第1のリング材料を含み、前記内側リングは、前記第1のリング材料とは異なる第2のリング材料を含む、請求項9に記載の基板ホルダアセンブリ。
- 前記外側ハローを前記ハローリングに可逆的に取り付けるように配置されたファスナアセンブリをさらに備える、請求項9に記載の基板ホルダアセンブリ。
- 前記ハローリングに隣接し、前記ハローリングと基板位置との間のギャップ内に配置された背面ギャップリングをさらに備え、前記基板位置は前記第2の開孔内にある、請求項9に記載の基板ホルダアセンブリ。
- 処理チャンバと、
前記処理チャンバ内に配置された基板ホルダアセンブリとを備える処理装置であって、前記基板ホルダアセンブリは、
基板位置で基板を支持するように配置された基板プラテンと、
前記基板位置の周りに配置されたハローリングと、
第1の材料を含む外側ハローであって、前記ハローリングの周りに配置され、前記ハローリングと係合するように構成された外側ハローとを備え、
前記ハローリングは、前記外側ハローとは異なる第2の材料を含む、
処理装置。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201862637164P | 2018-03-01 | 2018-03-01 | |
US62/637,164 | 2018-03-01 | ||
US15/969,254 US20190272983A1 (en) | 2018-03-01 | 2018-05-02 | Substrate halo arrangement for improved process uniformity |
US15/969,254 | 2018-05-02 | ||
PCT/US2019/015150 WO2019168616A1 (en) | 2018-03-01 | 2019-01-25 | Substrate halo arrangement for improved process uniformity |
Publications (2)
Publication Number | Publication Date |
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JP2021516445A true JP2021516445A (ja) | 2021-07-01 |
JP7083033B2 JP7083033B2 (ja) | 2022-06-09 |
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Application Number | Title | Priority Date | Filing Date |
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JP2020544652A Active JP7083033B2 (ja) | 2018-03-01 | 2019-01-25 | 処理の均一性を改善するための基板ハローの配置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20190272983A1 (ja) |
JP (1) | JP7083033B2 (ja) |
KR (1) | KR102445266B1 (ja) |
CN (1) | CN111819678B (ja) |
TW (1) | TW201944451A (ja) |
WO (1) | WO2019168616A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11646213B2 (en) | 2020-05-04 | 2023-05-09 | Applied Materials, Inc. | Multi-zone platen temperature control |
US11664193B2 (en) * | 2021-02-04 | 2023-05-30 | Applied Materials, Inc. | Temperature controlled/electrically biased wafer surround |
US20220384156A1 (en) * | 2021-05-25 | 2022-12-01 | Applied Materials, Inc. | Substrate halo arrangement for improved process uniformity |
Citations (4)
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JPH07245292A (ja) * | 1994-03-03 | 1995-09-19 | Tokyo Electron Ltd | プラズマエッチング装置 |
JP2011176228A (ja) * | 2010-02-25 | 2011-09-08 | Oki Semiconductor Co Ltd | プラズマ処理装置及びフォーカスリング |
JP2017050468A (ja) * | 2015-09-03 | 2017-03-09 | 新光電気工業株式会社 | 静電チャック装置及び静電チャック装置の製造方法 |
JP2017063011A (ja) * | 2015-09-25 | 2017-03-30 | 東京エレクトロン株式会社 | 載置台及びプラズマ処理装置 |
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US4944860A (en) * | 1988-11-04 | 1990-07-31 | Eaton Corporation | Platen assembly for a vacuum processing system |
US6423642B1 (en) * | 1998-03-13 | 2002-07-23 | Semitool, Inc. | Reactor for processing a semiconductor wafer |
US6589352B1 (en) * | 1999-12-10 | 2003-07-08 | Applied Materials, Inc. | Self aligning non contact shadow ring process kit |
US7582186B2 (en) * | 2002-12-20 | 2009-09-01 | Tokyo Electron Limited | Method and apparatus for an improved focus ring in a plasma processing system |
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KR101359070B1 (ko) * | 2009-03-03 | 2014-02-05 | 도쿄엘렉트론가부시키가이샤 | 탑재대 구조, 성막 장치 및 원료 회수 방법 |
KR101002748B1 (ko) * | 2009-11-17 | 2010-12-21 | (주)앤피에스 | 서셉터 유닛 및 이를 구비하는 기판 열처리 장치 |
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-
2018
- 2018-05-02 US US15/969,254 patent/US20190272983A1/en not_active Abandoned
-
2019
- 2019-01-25 WO PCT/US2019/015150 patent/WO2019168616A1/en active Application Filing
- 2019-01-25 JP JP2020544652A patent/JP7083033B2/ja active Active
- 2019-01-25 KR KR1020207027505A patent/KR102445266B1/ko active IP Right Grant
- 2019-01-25 CN CN201980015219.XA patent/CN111819678B/zh active Active
- 2019-02-11 TW TW108104490A patent/TW201944451A/zh unknown
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH07245292A (ja) * | 1994-03-03 | 1995-09-19 | Tokyo Electron Ltd | プラズマエッチング装置 |
JP2011176228A (ja) * | 2010-02-25 | 2011-09-08 | Oki Semiconductor Co Ltd | プラズマ処理装置及びフォーカスリング |
JP2017050468A (ja) * | 2015-09-03 | 2017-03-09 | 新光電気工業株式会社 | 静電チャック装置及び静電チャック装置の製造方法 |
JP2017063011A (ja) * | 2015-09-25 | 2017-03-30 | 東京エレクトロン株式会社 | 載置台及びプラズマ処理装置 |
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Publication number | Publication date |
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US20190272983A1 (en) | 2019-09-05 |
TW201944451A (zh) | 2019-11-16 |
KR20200116167A (ko) | 2020-10-08 |
WO2019168616A1 (en) | 2019-09-06 |
JP7083033B2 (ja) | 2022-06-09 |
KR102445266B1 (ko) | 2022-09-20 |
CN111819678A (zh) | 2020-10-23 |
CN111819678B (zh) | 2024-01-12 |
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