CN111819678A - 改良工艺均匀性的衬底晕圈配置 - Google Patents
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Abstract
一种衬底总成可包括外部晕圈,所述外部晕圈包含第一材料并界定第一孔隙。所述衬底总成也可包括晕环,所述晕环包含第二材料且至少部分地设置在所述第一孔隙内。所述晕环可界定同心地定位在所述第一孔隙内的第二孔隙,其中所述晕环耦合以在其中容置衬底。
Description
相关申请
本申请主张在2018年3月1号提出申请、标题为改良工艺均匀性的衬底晕圈配置(SUBSTRATE HALO ARRANGEMENT FOR IMPROVED PROCESS UNIFORMITY)的美国临时专利申请第62/637,164号的优先权,所述美国临时专利申请全文并入本文供参考。
技术领域
本公开的实施例涉及半导体工件处理,且更具体来说,涉及利用达成工艺均匀性的衬底晕圈的半导体工件处理。
背景技术
对于等离子体辅助(plasma-aided)及离子束辅助(ion beam-aided)装置处理来说,目标常常是在衬底上产生工艺均匀性。例如半导体晶片等衬底常常被定位成由硬件(例如,晕圈)环绕以保护未被设计成接收等离子体或离子束处理的处理室、衬底或其他组件。尽管衬底的大部分可接收相对均匀的处理,但频繁的观察到在衬底的周边附近存在边缘效应,其中所述边缘效应可包括非均匀的处理结果、以及污染、颗粒产生及其他非期望的结果。
有鉴于这些及其他考虑,提供本公开。
发明内容
在一个实施例中,一种衬底总成可包括外部晕圈,所述外部晕圈包含第一材料并界定第一孔隙。衬底支架可包括晕环,其中所述晕环包含第二材料且至少部分地设置在所述第一孔隙内。所述晕环可界定同心地定位在所述第一孔隙内的第二孔隙,其中所述晕环耦合以在其中容置衬底。
在另一实施例中,一种衬底支架总成可包括衬底台板(substrate platen),其中所述衬底台板被设置成在衬底位置处支撑衬底。所述衬底支架总成也可包括晕环,所述晕环设置在所述衬底位置周围。所述衬底支架总成还可包括外部晕圈,其中所述外部晕圈包含第一材料且设置在所述晕环周围。所述外部晕圈可界定第一孔隙,其中所述外部晕圈被设置成与所述晕环接合。所述晕环可包含第二材料且可至少部分地设置在所述第一孔隙内。所述晕环可界定同心地定位在所述第一孔隙内的第二孔隙。
在另一实施例中,一种处理设备可包括:处理室;以及衬底支架总成,设置在所述处理室中。所述衬底支架总成可包括衬底台板,其中所述衬底台板被设置成在衬底位置处支撑衬底。所述衬底支架总成也可包括晕环,所述晕环设置在所述衬底位置周围。所述衬底支架总成还可包括外部晕圈,所述外部晕圈包含第一材料,其中所述外部晕圈设置在所述晕环周围且被配置成与所述晕环接合。所述晕环可包含与所述外部晕圈不同的第二材料。
附图说明
附图示出本公开的示例性方式,包括本公开原理的实际应用,附图如下:
图1A是示出根据本公开实施例的处理设备的侧视图的示意图。
图1B是示出根据本公开实施例的衬底支架总成的前视图的示意图。
图1C是示出根据本公开实施例的另一处理设备的侧视图的示意图。
图2A是示出根据本公开实施例的另一衬底支架总成的前透视图。
图2B是沿图2A的切割线A-A截取的剖视图。
图2C是图2B的一部分的放大图。
图3是根据本公开其他实施例的额外的衬底支架总成的透视图。
所述附图未必按比例绘制。所述附图仅为示意图,并非旨在描绘本公开的具体参数。所述附图旨在示出本公开的示例性实施例,且因此不应被视为对范围进行限制。在所述附图中,相同的编号表示相同的元件。
具体实施方式
在下文中,现将参照附图来更充分地阐述本公开实施例,所述附图示出一些实施例。本公开的主题可实施为许多不同的形式且不应被视为仅限于本文所述实施例。提供这些实施例是为了使本公开将透彻及完整,并将向所属领域中的技术人员充分传达所述主题的范围。在所述附图中,相同的编号在通篇中指代相同的元件。
除非另外指明,否则本文所用的以单数形式进行描述且前面带有词“一(a或an)”的元件或操作被理解为也可能包括多个元件或多个操作。此外,已在一个或多个元件或组件的上下文中阐述了各种实施例。元件或组件可包括被配置成执行某些操作的任意结构。尽管可以有限数目的元件在某一拓扑结构(topology)中以举例方式阐述实施例,但实施例在给定实施方式所期望的交替拓扑结构中可包括更多或更少的元件。注意,对“一个实施例”或“实施例”的任意提及是指结合实施例阐述的特定特征、结构或特性包括在至少一个实施例中。在说明书各处出现的短语“在一个实施例中”、“在一些实施例中”及“在各种实施例中”未必全部指同一实施例。
现在参照图1A,示出了一种处理设备100,其中处理设备100可用于处理例如半导体晶片等衬底。处理设备100包括处理室102。处理室102包括衬底支架总成106,其中以下详细阐述衬底支架总成106的结构及功能。简略来说,衬底支架总成106可包括衬底台板108,衬底台板108被设置成保持衬底110、外部晕圈112以及晕环114。外部晕圈112以及晕环114可充当衬底总成116以调整并改良对衬底的处理。如在图1A中所示,处理室102可包含用于对设置在衬底总成116中的衬底110进行处理的处理物质104。
如进一步在图1A中所示,外部晕圈112界定第一孔隙,所述第一孔隙的边缘由A1示出,而晕环114界定第二孔隙,所述第二孔隙的边缘由A2示出,其中所述第二孔隙同心地定位在所述第一孔隙内。如图所示,晕环114可耦合以在第二孔隙内容置衬底110。
根据不同实施例的处理设备100可为用于对衬底110执行蚀刻操作的蚀刻工具、沉积工具或蚀刻及沉积工具的组合。在一些实施例中,处理设备100可为植入工具以将植入物质引入到衬底110中。因此,处理设备100可为基于等离子体的工具,包括等离子体蚀刻工具(例如,反应离子蚀刻工具)、等离子体掺杂(plasma doping,PLAD)设备、等离子体辅助化学气相沉积(plasma assisted chemical vapor deposition,PECVD)工具、离子束工具、反应离子束蚀刻工具或其他工具。
如在图1A中示意性地示出,处理设备100可产生并含有处理物质104,其中处理物质104可代表用于执行对衬底110的衬底处理的恰当的物质。因此,处理物质可包括离子、反应离子、反应中性粒子(reactive neutral)、植入物质等。尽管处理物质104被示出为包含在处理室102内,但在各种实施例中,处理设备100可包括多个从处理室102分离的室,包括离子源、等离子体源。在其他实施例中,处理室102可为等离子体室。各实施例并不仅限于此上下文。
现在转向图1B,图1B示出了示出衬底总成116的一个实施例的前视图。在此实例中,处理物质104被配置为在X-Y平面内的横截面中所示的伸长的离子束或带状束。可通过如在已知设备中的提取板(extraction plate)从等离子体室提供所述带状束。现在参照图1C,示出了处理设备150,其中处理设备150包括邻近处理室102的等离子体室152。处理物质104作为带状束从如在已知设备中的等离子体室102中的等离子体154进行提取。
如在图1B及图1C中所示,衬底支架总成106可在一些实施例中沿平行于Y轴的方向被扫描,如由箭头所示。在一些实施例中,含有处理物质104的带状束可由宽度W表征,其中宽度W超出衬底直径DS。如此一来,可利用处理物质104对整个衬底110进行处理。
根据各种实施例,外部晕圈112可由第一材料(例如,任意适当的材料)构成。外部晕圈可例如为被涂布以陶瓷或其他材料的金属,其中所述外部晕圈被设计成抵抗处理物质104的离子束进行的处理。根据一些实施例,晕环114可包含第二材料,其中所述第二材料可不同于第一材料。
在特定实施例中,晕环114可以可逆可拆卸的方式耦合到外部晕圈112,如以下详细阐述。晕环114因此可代表任意数目的不同的晕环,其中晕环114的材料可根据特定的应用进行选择。因此,一个晕环114可代替另一个晕环,从而使得能够因磨损或损坏而进行替换。因此,在恰当时,由第一晕环材料制成的第一晕环可代替由第二晕环材料制成的第二晕环。举例来说,当衬底110的材料被改变或当处理设备100的处理条件被充分更改时,交换晕环114与另一晕环可为恰当的。
在晕环114可模仿衬底110的某些性质的意义上来说,根据本公开的各种实施例的衬底总成116的一个功能是延长衬底110的直径。作为实例,当衬底110是硅晶片或硅合金晶片时,晕环114可由类似的材料(例如,硅或碳化硅)构成。如此一来,可减小或消除否则可由处理物质104在衬底110的边缘附近产生的边缘效应,因为衬底110及晕环114“似乎”作为具有直径DH的衬底出现在处理物质104中。因此,由于宽度W可超过衬底的直径DS,所以可在由处理物质104界定的带状束的外边缘或晕环114的外边缘处出现任意边缘效应。
作为参考,在已知的晕圈配置中,晕圈可为由金属(例如,钛)形成的整体式部件,以在离子束或等离子体的处理下提供机械及热鲁棒性(mechanical and thermalrobustness)。因此,可至少部分地由于衬底与晕圈之间的材料差异而在衬底与晕圈交汇的区域附近产生边缘效应。
根据一些非限制性实施例,直径DH可超出宽度W,其中在扫描期间,由处理物质104界定的带状束的外边缘在最宽部分处在晕环114的材料上方进行扫描。根据各种实施例,直径DH可超出300mm,且在一些情形中,可处于450mm的范围中。晕环114的宽度WR可大约为15mm到75mm。各实施例并不仅限于此上下文。
根据不同的实施例,晕环114可以不同的方式机械耦合到外部晕圈112。如在图1A中所示,外部晕圈112可包括外部部分120及凸台(ledge)122,其中外部部分120包括第一厚度且凸台122包括小于所述第一厚度的第二厚度,其中凸台122的内边缘界定第一孔隙,且其中凸台122被设置成与晕环114接合。注意,晕环114可薄于外部部分120,因此外部晕圈112与设置在凸台122上的晕环114可彼此共面。凸台122的内边缘123界定第一孔隙,且其中所述凸台被设置成与所述晕环接合。
在各种实施例中,衬底总成还可包括紧固件总成,其中所述紧固件总成被设置成将外部晕圈112可逆地贴附到晕环114。
图2A示出根据本公开的另一些实施例的衬底总成200。衬底总成200被配置成上部晕圈112A及下部晕圈112B,其中晕环114同心地配置在上部晕圈112A内。衬底总成200还包括配置为多个紧固件206的紧固件总成,所述紧固件总成将晕环114耦合到上部晕圈112A。晕环114也可与分布在周缘周围的隐藏销(hidden pin)204接合。
现在转向图2B,图2B示出了在紧固件206附近通过图2A的截面A-A的剖视图。如在本文中所示,衬底总成200也可包括背侧间隙环208,以防止电场或材料穿透到衬底110与晕环114之间的区域中。背侧间隙环208定位在晕环114的一部分之后且也位于晕环114与衬底110的衬底位置P之间的间隙115内,从而在衬底110处于恰当位置时阻挡材料进入此间隙。提供背侧间隙环208可使得能够结合衬底支架总成使用替代形状、涂层、材料及偏压等。
在此实施例中,紧固件206包括支柱214,其中支柱214可为陶瓷或涂布材料。如在图2C的放大图中所示,紧固件206还可包括夹具210以及自容式弹簧腔总成(self-contained spring capsule assembly)212。自容式弹簧腔总成212可被配置成对被产生用来将晕环114夹紧到外部晕圈112的力进行限制。在示例性实施例中,由紧固件206产生的最大力可为1lb到1.5lb。对夹紧力的此种限制有助于确保晕环114不会断裂,此在其中晕环114是由例如硅等脆性材料制成的实施例中尤其有用。在其他实施例中,可使用弹簧夹(spring clip)代替自容式腔总成。各实施例并不仅限于此上下文。
转向图3,图3示出了衬底总成300的实施例,其中晕环302包括外环306以及设置在外环306内的内环304。内环304可如上所述界定第二孔隙。外环306与内环304可通过在图3的实例中被示出为间隔件308的间隙或间隔件而彼此分离或彼此电隔离。在一些实施例中,外环306包含第一环材料,且内环304包含不同于第一环材料的第二环材料。根据一些实施例,内环304可被施加电偏压,或外环306可被施加电偏压,而在一些实施例中,内环304与外环306可被个别地耦合以接收不同的电偏压,如分别由电压源310及电压源312所示。在一些实施例中,衬底台板108也可耦合到电压源320,而外部晕圈112单独耦合到电压源322。因此,在操作期间,施加到内环304及外环306的电压可彼此相同或可彼此不同。另外,内环304及外环306中的一者或两者可以与施加到衬底台板108的电压相同的电压或与施加到衬底台板108的电压不同的电压被施加偏压。类似地,外部晕圈112可耦合以接收与被施加到内环304、外环306及衬底台板108中的任一者的电压相同或不同的电压。
在一个实施例中,内环304、外环306或所述两者可被配置成分别从被提供到衬底110的任意加热(如分别由加热器316及加热器318所示)接收加热。根据不同的实施例,外环306及内环304可耦合以接收彼此不同的温度。衬底台板108或衬底110可耦合到加热器324以分别从内环304及外环306被加热,而外部晕圈112独立地耦合到加热器326。因此,该些组件中的每一者可被加热到与衬底总成300的每一其他组件的温度相同或不同的温度。
可灵活地配置晕环(例如,晕环302)以界定多个平面,例如用于内环304的第一平面以及用于外环306的第二平面。因此,通过独立于衬底台板或独立于外部晕圈向晕环或内部晕环及外部晕环提供偏压或加热,可仔细地调整或控制衬底的周边附近的局部环境,以将边缘效应考虑在内并改良工艺均匀性。
在其中结合对硅晶片的蚀刻在离子束蚀刻系统中采用硅晕圈的特定实施例中,在晶片上的蚀刻速率变化从不使用晕环时为5%的非均匀性改良为使用晕环时1%的均匀性。
尽管上述配置强调在外部晕圈的前方安装晕环,但根据本公开的实施例其他配置也是可能的。举例来说,相反可使用环形夹子来将晕环紧固到外部晕圈。此外,可使用后部安装晕环,或静电夹紧(electrostatic clamping)。
概括来说,本文中所述的实施例提供至少以下技术优点。第一个优点是本公开实施例在通过提供可拆卸的晕环来减小边缘效应方面提供灵活性,其中可改变晕环的材料以适应衬底变化或工艺变化。第二个优点是使用窄的插入件(narrow insert)作为晕环使得能够轻易地更换材料以适应磨损。
本公开的范围不受本文所述具体实施例限制。实际上,通过阅读以上说明及附图,对所属领域中的普通技术人员来说,除本文所述实施例及修改形式以外的本公开的其他各种实施例及对本公开的各种修改形式也将显而易见。因此,这些其他实施例及修改形式都旨在落于本公开的范围内。此外,本文中已在用于特定目的的特定环境中的特定实作方式的上下文中阐述了本公开。所属领域中的普通技术人员将认识到,其适用性并不仅限于此且本公开可出于任意数目的目的而有益地实作于任意数目的环境中。因此,以上提出的权利要求应根据本文所述本公开的全部广度及精神来加以解释。
Claims (15)
1.一种衬底总成,包括:
外部晕圈,所述外部晕圈包含第一材料,所述外部晕圈界定第一孔隙;以及
晕环,所述晕环包含第二材料且至少部分地设置在所述第一孔隙内,所述晕环界定同心地定位在所述第一孔隙内的第二孔隙,其中所述晕环耦合以在其中容置衬底。
2.根据权利要求1所述的衬底总成,其中所述外部晕圈包含金属。
3.根据权利要求1所述的衬底总成,其中所述晕环包含硅或碳化硅。
4.根据权利要求1所述的衬底总成,其中所述晕环包括外环及设置在所述外环内的内环,所述内环界定所述第二孔隙,其中所述外环包含第一环材料,且所述内环包含与所述第一环材料不同的第二环材料。
5.根据权利要求1所述的衬底总成,还包括紧固件总成,所述紧固件总成被设置成将所述外部晕圈可逆地贴附到所述晕环。
6.根据权利要求5所述的衬底总成,其中所述紧固件总成包括自容式弹簧腔总成。
7.根据权利要求1所述的衬底总成,其中所述外部晕圈包括外部部分及凸台,其中所述外部部分包括第一厚度且所述凸台包括小于所述第一厚度的第二厚度,其中所述凸台的内边缘界定所述第一孔隙,且其中所述凸台被设置成与所述晕环接合。
8.根据权利要求1所述的衬底总成,还包括背侧间隙环,所述背侧间隙环被设置成邻近所述晕环且位于所述晕环与衬底位置之间的间隙内,所述衬底位置位于所述第二孔隙内。
9.一种衬底支架总成,包括:
衬底台板,所述衬底台板被设置成在衬底位置处支撑衬底;
晕环,所述晕环设置在所述衬底位置周围;以及
外部晕圈,所述外部晕圈包含第一材料,所述外部晕圈设置在所述晕环周围且界定第一孔隙,其中所述外部晕圈被设置成与所述晕环接合,
所述晕环包含第二材料且至少部分地设置在所述第一孔隙内,所述晕环界定同心地定位在所述第一孔隙内的第二孔隙。
10.根据权利要求9所述的衬底支架总成,其中所述外部晕圈包含金属。
11.根据权利要求9所述的衬底支架总成,其中所述晕环包含硅或碳化硅。
12.根据权利要求9所述的衬底支架总成,其中所述晕环包括外环及设置在所述外环内的内环,所述内环界定所述第二孔隙,其中所述外环包含第一环材料,且所述内环包含与所述第一环材料不同的第二环材料。
13.根据权利要求9所述的衬底支架总成,还包括紧固件总成,所述紧固件总成被设置成将所述外部晕圈可逆地贴附到所述晕环。
14.根据权利要求9所述的衬底支架总成,还包括背侧间隙环,所述背侧间隙环被设置成邻近所述晕环且位于所述晕环与衬底位置之间的间隙内,所述衬底位置位于所述第二孔隙内。
15.一种处理设备,包括:
处理室;以及
衬底支架总成,设置在所述处理室中,所述衬底支架总成包括:
衬底台板,所述衬底台板被设置成在衬底位置处支撑衬底;
晕环,所述晕环设置在所述衬底位置周围;以及
外部晕圈,所述外部晕圈包含第一材料,所述外部晕圈设置在所述晕环周围且被配置成与所述晕环接合,
其中所述晕环包含与所述外部晕圈不同的第二材料。
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