JP2021507505A - 光吸収層用前駆体、これを用いた有機−無機複合太陽電池の製造方法および有機−無機複合太陽電池 - Google Patents
光吸収層用前駆体、これを用いた有機−無機複合太陽電池の製造方法および有機−無機複合太陽電池 Download PDFInfo
- Publication number
- JP2021507505A JP2021507505A JP2020530574A JP2020530574A JP2021507505A JP 2021507505 A JP2021507505 A JP 2021507505A JP 2020530574 A JP2020530574 A JP 2020530574A JP 2020530574 A JP2020530574 A JP 2020530574A JP 2021507505 A JP2021507505 A JP 2021507505A
- Authority
- JP
- Japan
- Prior art keywords
- light absorption
- organic
- absorption layer
- solar cell
- inorganic composite
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002131 composite material Substances 0.000 title claims abstract description 61
- 239000002243 precursor Substances 0.000 title claims abstract description 53
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 230000031700 light absorption Effects 0.000 title claims description 75
- 150000002894 organic compounds Chemical class 0.000 claims abstract description 39
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 37
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims abstract description 36
- 239000011737 fluorine Substances 0.000 claims abstract description 36
- 239000000126 substance Substances 0.000 claims description 49
- 150000001768 cations Chemical class 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 14
- 150000001875 compounds Chemical class 0.000 claims description 13
- -1 halogen ions Chemical class 0.000 claims description 13
- 239000011248 coating agent Substances 0.000 claims description 12
- 238000000576 coating method Methods 0.000 claims description 12
- 239000004094 surface-active agent Substances 0.000 claims description 8
- 150000004820 halides Chemical class 0.000 claims description 6
- 229910052736 halogen Inorganic materials 0.000 claims description 6
- 229910001507 metal halide Inorganic materials 0.000 claims description 6
- 150000005309 metal halides Chemical class 0.000 claims description 6
- 229910021645 metal ion Inorganic materials 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 117
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical group CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 18
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 15
- 230000000052 comparative effect Effects 0.000 description 13
- 239000000758 substrate Substances 0.000 description 13
- 238000005259 measurement Methods 0.000 description 11
- 230000005525 hole transport Effects 0.000 description 9
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 8
- 239000011521 glass Substances 0.000 description 7
- 239000010931 gold Substances 0.000 description 7
- 229910003473 lithium bis(trifluoromethanesulfonyl)imide Inorganic materials 0.000 description 7
- QSZMZKBZAYQGRS-UHFFFAOYSA-N lithium;bis(trifluoromethylsulfonyl)azanide Chemical compound [Li+].FC(F)(F)S(=O)(=O)[N-]S(=O)(=O)C(F)(F)F QSZMZKBZAYQGRS-UHFFFAOYSA-N 0.000 description 7
- 238000004528 spin coating Methods 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- XDXWNHPWWKGTKO-UHFFFAOYSA-N 207739-72-8 Chemical compound C1=CC(OC)=CC=C1N(C=1C=C2C3(C4=CC(=CC=C4C2=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC(=CC=C1C1=CC=C(C=C13)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC=C(OC)C=C1 XDXWNHPWWKGTKO-UHFFFAOYSA-N 0.000 description 5
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 5
- 239000011777 magnesium Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 5
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 4
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 4
- 229910010413 TiO 2 Inorganic materials 0.000 description 4
- 239000003513 alkali Substances 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 229920000139 polyethylene terephthalate Polymers 0.000 description 4
- 239000005020 polyethylene terephthalate Substances 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 239000004743 Polypropylene Substances 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 229910052794 bromium Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 125000001153 fluoro group Chemical group F* 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000007646 gravure printing Methods 0.000 description 3
- 238000007641 inkjet printing Methods 0.000 description 3
- 238000004949 mass spectrometry Methods 0.000 description 3
- 125000005010 perfluoroalkyl group Chemical group 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- ADSOSINJPNKUJK-UHFFFAOYSA-N 2-butylpyridine Chemical group CCCCC1=CC=CC=N1 ADSOSINJPNKUJK-UHFFFAOYSA-N 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 2
- 229920002284 Cellulose triacetate Polymers 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- 239000004696 Poly ether ether ketone Substances 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- NNLVGZFZQQXQNW-ADJNRHBOSA-N [(2r,3r,4s,5r,6s)-4,5-diacetyloxy-3-[(2s,3r,4s,5r,6r)-3,4,5-triacetyloxy-6-(acetyloxymethyl)oxan-2-yl]oxy-6-[(2r,3r,4s,5r,6s)-4,5,6-triacetyloxy-2-(acetyloxymethyl)oxan-3-yl]oxyoxan-2-yl]methyl acetate Chemical compound O([C@@H]1O[C@@H]([C@H]([C@H](OC(C)=O)[C@H]1OC(C)=O)O[C@H]1[C@@H]([C@@H](OC(C)=O)[C@H](OC(C)=O)[C@@H](COC(C)=O)O1)OC(C)=O)COC(=O)C)[C@@H]1[C@@H](COC(C)=O)O[C@@H](OC(C)=O)[C@H](OC(C)=O)[C@H]1OC(C)=O NNLVGZFZQQXQNW-ADJNRHBOSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000003618 dip coating Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 229910052740 iodine Inorganic materials 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000010422 painting Methods 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920002530 polyetherether ketone Polymers 0.000 description 2
- 239000011112 polyethylene naphthalate Substances 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- SKRWFPLZQAAQSU-UHFFFAOYSA-N stibanylidynetin;hydrate Chemical compound O.[Sn].[Sb] SKRWFPLZQAAQSU-UHFFFAOYSA-N 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- GKWLILHTTGWKLQ-UHFFFAOYSA-N 2,3-dihydrothieno[3,4-b][1,4]dioxine Chemical compound O1CCOC2=CSC=C21 GKWLILHTTGWKLQ-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- MAGFQRLKWCCTQJ-UHFFFAOYSA-M 4-ethenylbenzenesulfonate Chemical compound [O-]S(=O)(=O)C1=CC=C(C=C)C=C1 MAGFQRLKWCCTQJ-UHFFFAOYSA-M 0.000 description 1
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical class C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- 229920000144 PEDOT:PSS Polymers 0.000 description 1
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 1
- DBMJMQXJHONAFJ-UHFFFAOYSA-M Sodium laurylsulphate Chemical compound [Na+].CCCCCCCCCCCCOS([O-])(=O)=O DBMJMQXJHONAFJ-UHFFFAOYSA-M 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- GKPXMGUNTQSFGA-UHFFFAOYSA-N but-2-ynyl 1-methyl-3,6-dihydro-2h-pyridine-5-carboxylate;4-methylbenzenesulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1.CC#CCOC(=O)C1=CCCN(C)C1 GKPXMGUNTQSFGA-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- CREMABGTGYGIQB-UHFFFAOYSA-N carbon carbon Chemical compound C.C CREMABGTGYGIQB-UHFFFAOYSA-N 0.000 description 1
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000004817 gas chromatography Methods 0.000 description 1
- 238000007756 gravure coating Methods 0.000 description 1
- 238000004128 high performance liquid chromatography Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 238000004811 liquid chromatography Methods 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000008558 metabolic pathway by substance Effects 0.000 description 1
- 239000002905 metal composite material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- CIBMHJPPKCXONB-UHFFFAOYSA-N propane-2,2-diol Chemical compound CC(C)(O)O CIBMHJPPKCXONB-UHFFFAOYSA-N 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 235000019333 sodium laurylsulphate Nutrition 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- DLFVBJFMPXGRIB-UHFFFAOYSA-N thioacetamide Natural products CC(N)=O DLFVBJFMPXGRIB-UHFFFAOYSA-N 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 125000001889 triflyl group Chemical group FC(F)(F)S(*)(=O)=O 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/15—Deposition of organic active material using liquid deposition, e.g. spin coating characterised by the solvent used
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2004—Light-sensitive devices characterised by the electrolyte, e.g. comprising an organic electrolyte
- H01G9/2009—Solid electrolytes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/371—Metal complexes comprising a group IB metal element, e.g. comprising copper, gold or silver
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/0029—Processes of manufacture
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
- H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
- H10K30/151—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/40—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/381—Metal complexes comprising a group IIB metal element, e.g. comprising cadmium, mercury or zinc
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L2031/0344—Organic materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Materials Engineering (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
前記ペロブスカイト前駆体対比0.005wt%〜0.5wt%のフッ素系有機化合物を含むものである光吸収層用前駆体を提供する。
前記第1電極上に第1共通層を形成するステップと、
前記第1共通層上に前記光吸収層用前駆体をコーティングして光吸収層を形成するステップと、
前記光吸収層上に第2共通層を形成するステップと、
前記第2共通層上に第2電極を形成するステップとを含む有機−無機複合太陽電池の製造方法を提供する。
前記第1電極上に備えられた第1共通層と、
前記第1共通層上に備えられた光吸収層と、
前記光吸収層上に備えられた第2共通層と、
前記第2共通層上に備えられた第2電極とを含む有機−無機複合太陽電池において、
前記光吸収層は、ペロブスカイト構造の化合物;およびフッ素系有機化合物を含み、
前記フッ素系有機化合物は、光吸収層の質量対比0.005wt%〜5wt%含まれるものである有機−無機複合太陽電池を提供する。
20:第1共通層
30:光吸収層
40:第2共通層
50:第2電極
R1X1
R2aR3(1−a)X2eX3(1−e)
前記化学式1〜3において、
R2およびR3は、互いに異なり、
R4、R5およびR6は、互いに異なり、
R1〜R6は、それぞれCnH2n+1NH3 +、NH4 +、HC(NH2)2 +、Cs+、NF4 +、NCl4 +、PF4 +、PCl4 +、CH3PH3 +、CH3AsH3 +、CH3SbH3 +、PH4 +、AsH4 +、およびSbH4 +から選択される1価の陽イオンであり、
X1〜X5は、互いに同一または異なり、それぞれ独立して、ハロゲンイオンであり、
nは、1〜9の整数であり、
aは、0<a<1の実数であり、
bは、0<b<1の実数であり、
cは、0<c<1の実数であり、
dは、0<d<1の実数であり、
b+c+dは、1であり、
eは、0<e<1の実数であり、
e'は、0<e'<1の実数である。
M1X62
X6は、ハロゲンイオンである。
前記第1電極上に第1共通層を形成するステップと、
前記第1共通層上に前記光吸収層用前駆体をコーティングして光吸収層を形成するステップと、
前記光吸収層上に第2共通層を形成するステップと、
前記第2共通層上に第2電極を形成するステップとを含む有機−無機複合太陽電池の製造方法を提供する。
前記第1電極上に備えられた第1共通層と、
前記第1共通層上に備えられた光吸収層と、
前記光吸収層上に備えられた第2共通層と、
前記第2共通層上に備えられた第2電極とを含む有機−無機複合太陽電池において、
前記光吸収層は、ペロブスカイト構造の化合物;およびフッ素系有機化合物を含み、
前記フッ素系有機化合物は、光吸収層の質量対比0.005wt%〜5wt%含まれるものである有機−無機複合太陽電池を提供する。
R1M1X13
R2aR3(1−a)M2X2zX3(3−z)
R4bR5cR6dM3X4z'X5(3−z')
R2およびR3は、互いに異なり、
R4、R5およびR6は、互いに異なり、
R1〜R6は、それぞれCnH2n+1NH3 +、NH4 +、HC(NH2)2 +、Cs+、NF4 +、NCl4 +、PF4 +、PCl4 +、CH3PH3 +、CH3AsH3 +、CH3SbH3 +、PH4 +、AsH4 +、およびSbH4 +から選択される1価の陽イオンであり、
M1〜M3は、互いに同一または異なり、それぞれ独立して、Cu2+、Ni2+、Co2+、Fe2+、Mn2+、Cr2+、Pd2+、Cd2+、Ge2+、Sn2+、Bi2+、Pb2+、およびYb2+から選択される2価の金属イオンであり、
X1〜X5は、互いに同一または異なり、それぞれ独立して、ハロゲンイオンであり、
nは、1〜9の整数であり、
aは、0<a<1の実数であり、
bは、0<b<1の実数であり、
cは、0<c<1の実数であり、
dは、0<d<1の実数であり、
b+c+dは、1であり、
zは、0<z<3の実数であり、
z'は、0<z'<3の実数である。
Claims (10)
- ペロブスカイト前駆体;および
前記ペロブスカイト前駆体対比0.005wt%〜0.5wt%のフッ素系有機化合物
を含むものである
光吸収層用前駆体。 - 前記ペロブスカイト前駆体は、有機ハロゲン化物および金属ハロゲン化物を含むものである、
請求項1に記載の光吸収層用前駆体。 - 前記有機ハロゲン化物は、下記化学式1〜3のうちのいずれか1つで表されるものである、
請求項2に記載の光吸収層用前駆体:
[化学式1]
R1X1
[化学式2]
R2aR3(1−a)X2eX3(1−e)
[化学式3]
R4bR5cR6dX4e'X5(1−e')
前記化学式1〜3において、
R2およびR3は、互いに異なり、
R4、R5およびR6は、互いに異なり、
R1〜R6は、それぞれCnH2n+1NH3 +、NH4 +、HC(NH2)2 +、Cs+、NF4 +、NCl4 +、PF4 +、PCl4 +、CH3PH3 +、CH3AsH3 +、CH3SbH3 +、PH4 +、AsH4 +、およびSbH4 +から選択される1価の陽イオンであり、
X1〜X5は、互いに同一または異なり、それぞれ独立して、ハロゲンイオンであり、
nは、1〜9の整数であり、
aは、0<a<1の実数であり、
bは、0<b<1の実数であり、
cは、0<c<1の実数であり、
dは、0<d<1の実数であり、
b+c+dは、1であり、
eは、0<e<1の実数であり、
e'は、0<e'<1の実数である。 - 前記金属ハロゲン化物は、下記化学式4で表されるものである、
請求項2に記載の光吸収層用前駆体:
[化学式4]
M1X62
前記化学式4において、
M1は、Cu2+、Ni2+、Co2+、Fe2+、Mn2+、Cr2+、Pd2+、Cd2+、Ge2+、Sn2+、Pb2+、およびYb2+から選択される2価の金属イオンであり、
X6は、ハロゲンイオンである。 - 前記フッ素系有機化合物は、フッ素系界面活性剤を含むものである、
請求項1から4のいずれか1項に記載の光吸収層用前駆体。 - 第1電極を用意するステップと、
前記第1電極上に第1共通層を形成するステップと、
前記第1共通層上に請求項1〜5のいずれか1項に記載の光吸収層用前駆体をコーティングして光吸収層を形成するステップと、
前記光吸収層上に第2共通層を形成するステップと、
前記第2共通層上に第2電極を形成するステップと
を含む
有機−無機複合太陽電池の製造方法。 - 請求項6に記載の有機−無機複合太陽電池の製造方法により製造された
有機−無機複合太陽電池。 - 第1電極と、
前記第1電極上に備えられた第1共通層と、
前記第1共通層上に備えられた光吸収層と、
前記光吸収層上に備えられた第2共通層と、
前記第2共通層上に備えられた第2電極とを含む有機−無機複合太陽電池において、
前記光吸収層は、ペロブスカイト構造の化合物;およびフッ素系有機化合物を含み、
前記フッ素系有機化合物は、光吸収層の質量対比0.005wt%〜5wt%含まれるものである
有機−無機複合太陽電池。 - 前記ペロブスカイト構造の化合物は、下記化学式5〜7のうちのいずれか1つで表されるものである、
請求項8に記載の有機−無機複合太陽電池:
[化学式5]
R1M1X13
[化学式6]
R2aR3(1−a)M2X2zX3(3−z)
[化学式7]
R4bR5cR6dM3X4z'X5(3−z')
前記化学式5〜7において、
R2およびR3は、互いに異なり、
R4、R5およびR6は、互いに異なり、
R1〜R6は、それぞれCnH2n+1NH3 +、NH4 +、HC(NH2)2 +、Cs+、NF4 +、NCl4 +、PF4 +、PCl4 +、CH3PH3 +、CH3AsH3 +、CH3SbH3 +、PH4 +、AsH4 +、およびSbH4 +から選択される1価の陽イオンであり、
M1〜M3は、互いに同一または異なり、それぞれ独立して、Cu2+、Ni2+、Co2+、Fe2+、Mn2+、Cr2+、Pd2+、Cd2+、Ge2+、Sn2+、Bi2+、Pb2+、およびYb2+から選択される2価の金属イオンであり、
X1〜X5は、互いに同一または異なり、それぞれ独立して、ハロゲンイオンであり、
nは、1〜9の整数であり、
aは、0<a<1の実数であり、
bは、0<b<1の実数であり、
cは、0<c<1の実数であり、
dは、0<d<1の実数であり、
b+c+dは、1であり、
zは、0<z<3の実数であり、
z'は、0<z'<3の実数である。 - 前記フッ素系有機化合物は、フッ素系界面活性剤を含むものである、
請求項8または9に記載の有機−無機複合太陽電池。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2017-0179568 | 2017-12-26 | ||
KR20170179568 | 2017-12-26 | ||
KR10-2018-0156846 | 2018-12-07 | ||
KR1020180156846A KR20190078493A (ko) | 2017-12-26 | 2018-12-07 | 광흡수층용 전구체, 이를 이용한 유-무기 복합 태양전지 제조방법 및 유-무기 복합 태양전지 |
PCT/KR2018/015607 WO2019132318A1 (ko) | 2017-12-26 | 2018-12-10 | 광흡수층용 전구체, 이를 이용한 유-무기 복합 태양전지 제조방법 및 유-무기 복합 태양전지 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2021507505A true JP2021507505A (ja) | 2021-02-22 |
JP7110537B2 JP7110537B2 (ja) | 2022-08-02 |
Family
ID=67259307
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020530574A Active JP7110537B2 (ja) | 2017-12-26 | 2018-12-10 | 光吸収層用前駆体、これを用いた有機-無機複合太陽電池の製造方法および有機-無機複合太陽電池 |
Country Status (4)
Country | Link |
---|---|
US (1) | US11177078B2 (ja) |
JP (1) | JP7110537B2 (ja) |
KR (1) | KR20190078493A (ja) |
CN (1) | CN111433928B (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102292514B1 (ko) | 2014-11-19 | 2021-08-23 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
CN115360261B (zh) * | 2022-07-18 | 2024-09-10 | 华中科技大学 | 一种制备V字型Br梯度CsPbI3-xBrx吸光层的方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20170084399A1 (en) * | 2014-02-26 | 2017-03-23 | Commonwealth Scientific And Industrial Research Organiztion | Process of forming a photoactive layer of a perovskite photoactive device |
KR101746335B1 (ko) * | 2016-03-29 | 2017-06-21 | 포항공과대학교 산학협력단 | 금속 할라이드 페로브스카이트 나노결정입자 박막 제조방법 및 이를 이용한 광전자 소자 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6420056B1 (en) | 1999-07-08 | 2002-07-16 | International Business Machines Corporation | Electroluminescent device with dye-containing organic-inorganic hybrid materials as an emitting layer |
US7105360B2 (en) | 2002-03-08 | 2006-09-12 | International Business Machines Corporation | Low temperature melt-processing of organic-inorganic hybrid |
WO2013123517A1 (en) * | 2012-02-16 | 2013-08-22 | The Administrators Of The Tulane Educational Fund | Hollow nanoparticles with hybrid double layers |
KR20140007045A (ko) | 2012-07-05 | 2014-01-16 | 한국화학연구원 | 나노구조 유-무기 하이브리드 태양전지 |
JP5943492B2 (ja) | 2014-03-26 | 2016-07-05 | 旭化成株式会社 | シリコン太陽電池 |
JP6114710B2 (ja) | 2014-03-27 | 2017-04-12 | 富士フイルム株式会社 | 太陽電池 |
WO2015163679A1 (ko) * | 2014-04-23 | 2015-10-29 | 주식회사 엘지화학 | 유-무기 하이브리드 태양 전지 |
EP3136450B1 (en) * | 2014-04-28 | 2021-06-09 | Research & Business Foundation Sungkyunkwan University | Perovskite solar cell and manufacturing method therefor |
KR101677798B1 (ko) | 2014-06-13 | 2016-11-18 | 주식회사 엘지화학 | 태양전지 및 이의 제조방법 |
WO2016072806A2 (ko) | 2014-11-06 | 2016-05-12 | 포항공과대학교 산학협력단 | 코어-쉘 구조의 페로브스카이트 나노결정입자 발광체, 이의 제조방법 및 이를 이용한 발광소자 |
KR101746296B1 (ko) | 2014-11-06 | 2017-06-21 | 포항공과대학교 산학협력단 | 코어-쉘 구조의 페로브스카이트 나노결정입자 발광체, 이의 제조방법 및 이를 이용한 발광소자 |
US10626326B2 (en) | 2014-11-06 | 2020-04-21 | Postech Academy-Industry Foundation | Method for manufacturing perovskite nanocrystal particle light emitting body where organic ligand is substituted, nanocrystal particle light emitting body manufactured thereby, and light emitting device using same |
CN107431130B (zh) | 2015-03-09 | 2020-05-22 | 富士胶片株式会社 | 光电转换元件、太阳能电池及光电转换元件的制造方法 |
WO2017184292A1 (en) * | 2016-04-22 | 2017-10-26 | The Trustees Of Princeton University | Organic-inorganic hybrid perovskite nanocrystals and methods of making the same |
KR101810155B1 (ko) | 2016-07-29 | 2017-12-19 | 울산과학기술원 | 고효율 페로브스카이트 화합물계 막의 제조방법 및 이를 포함하는 태양전지 |
US11848396B2 (en) * | 2017-09-07 | 2023-12-19 | Nutech Ventures, Inc. | Surfactant additive for solution coating large area high efficiency perovskite solar cells and other devices |
-
2018
- 2018-12-07 KR KR1020180156846A patent/KR20190078493A/ko not_active Application Discontinuation
- 2018-12-10 US US16/958,109 patent/US11177078B2/en active Active
- 2018-12-10 JP JP2020530574A patent/JP7110537B2/ja active Active
- 2018-12-10 CN CN201880078531.9A patent/CN111433928B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20170084399A1 (en) * | 2014-02-26 | 2017-03-23 | Commonwealth Scientific And Industrial Research Organiztion | Process of forming a photoactive layer of a perovskite photoactive device |
KR101746335B1 (ko) * | 2016-03-29 | 2017-06-21 | 포항공과대학교 산학협력단 | 금속 할라이드 페로브스카이트 나노결정입자 박막 제조방법 및 이를 이용한 광전자 소자 |
Also Published As
Publication number | Publication date |
---|---|
JP7110537B2 (ja) | 2022-08-02 |
CN111433928B (zh) | 2023-10-24 |
US20200365334A1 (en) | 2020-11-19 |
KR20190078493A (ko) | 2019-07-04 |
CN111433928A (zh) | 2020-07-17 |
US11177078B2 (en) | 2021-11-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Bella et al. | Performance and stability improvements for dye-sensitized solar cells in the presence of luminescent coatings | |
JP6304980B2 (ja) | ペロブスカイト系材料を用いた光電変換装置 | |
JP6763560B2 (ja) | 有機−無機複合太陽電池および有機−無機複合太陽電池の製造方法 | |
KR20180083823A (ko) | 페로브스카이트 기반의 태양전지 및 그의 제조방법 | |
Wang et al. | Energy level and thickness control on PEDOT: PSS layer for efficient planar heterojunction perovskite cells | |
JP7110537B2 (ja) | 光吸収層用前駆体、これを用いた有機-無機複合太陽電池の製造方法および有機-無機複合太陽電池 | |
KR20200034637A (ko) | 유-무기 복합 태양전지 | |
KR101794988B1 (ko) | 페로브스카이트 광흡수층 제조방법 및 이를 적용한 태양전지 제조방법 | |
Yoo et al. | Binary redox couples for highly transparent and high-voltage dye-sensitized solar cells | |
Wang et al. | Al2O3 nanoparticles as surface modifier enables deposition of high quality perovskite films for ultra-flexible photovoltaics | |
KR20150048317A (ko) | 고분자 지지층을 포함하는 염료감응 태양전지, 및 이의 제조 방법 | |
KR20190110268A (ko) | 유-무기 복합 태양전지 | |
Jafarzadeh et al. | Flexible, Transparent, and Bifacial Perovskite Solar Cells and Modules Using the Wide-Band Gap FAPbBr3 Perovskite Absorber | |
JP6835417B2 (ja) | 有機−無機複合太陽電池の製造方法 | |
KR102416108B1 (ko) | 유-무기 복합 태양전지 및 유-무기 복합 태양전지 제조방법 | |
KR20200143897A (ko) | 유-무기 복합 태양전지 및 유-무기 복합 태양전지의 제조방법 | |
KR20210012709A (ko) | 유-무기 복합 태양전지 및 그 제조방법 | |
KR20200143898A (ko) | 유-무기 복합 태양전지 및 유-무기 복합 태양전지의 제조방법 | |
KR20200040517A (ko) | 유-무기 복합 태양전지의 정공수송층 형성용 조성물, 유-무기 복합 태양전지 및 유-무기 복합 태양전지의 제조방법 | |
KR102616389B1 (ko) | 유-무기 복합 태양전지 | |
KR102024978B1 (ko) | 유무기 복합 태양전지 | |
KR102647065B1 (ko) | 유-무기 복합 태양전지 | |
KR20200031389A (ko) | 유-무기 복합 태양전지 | |
dos Santos | Slot-die coating for efficient and scalable inverted Perovskite Solar Cells in ambient air | |
KR20190101741A (ko) | 유-무기 복합 태양전지 및 유-무기 복합 태양전지의 제조방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20200616 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20210607 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20210706 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20211001 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20220104 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20220328 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20220621 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20220630 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7110537 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |