JP2021168312A - Light-emitting device - Google Patents

Abstract

To prevent an end part of a second layer containing a silver atom, provided between a first layer and a third layer, each containing a transparent conductive material from breaking through an insulation film.SOLUTION: A second layer 114 includes a projection part 114a, and the projection part 114a is projected to an outside of a semipermeable reflection layer 110 from an end part of a first layer 112 and an end part of a third layer 116. The projection part 114a of the second layer 114 is expanded to a thickness direction of the semipermeable reflection layer 110. As a result, the thickness of the projection part 114a of the second layer 114 is thicker than the thickness of a part between the first layer 112 and the third layer 116 of the second layer 114. An insulation film 150 is a coating insulation film. That is, the insulation film 150 is formed in a coating process.SELECTED DRAWING: Figure 1

Description

The present invention relates to a method for manufacturing a light emitting device and a light emitting device.

In recent years, an organic light emitting diode (OLED) has been developed as a light emitting device. The OLED has an organic layer, which can emit light by organic electroluminescence (EL).

Further, in recent years, as described in Patent Document 1, for example, a microcavity (MC) structure is used for an OLED. In the MC structure, the organic layer is located between the reflective layer and the transflective reflective layer. Therefore, the light generated in the organic layer can be resonated by the reflective layer and the transflective reflective layer. In particular, an example of the semi-transmissive reflective layer of Patent Document 1 has a first conductive layer having a function of reflecting light and a second conductive layer located on the first conductive layer and having a function of transmitting light. .. Patent Document 1 has a function of forming a conductive layer having a function of reflecting light, patterning the conductive layer to form a first conductive layer, forming the first conductive layer, and then transmitting light. It is described that a conductive layer is formed and the conductive layer is patterned to form a second conductive layer on the first conductive layer.

Further, in recent years, as described in Patent Document 2, for example, an OLED having translucency has been developed. In particular, the OLED described in Patent Document 2 has a translucent portion between adjacent light emitting portions. Therefore, the light from the outside of the OLED can pass through the translucent portion. In this way, the OLED is translucent.

Japanese Unexamined Patent Publication No. 2016-171319 Japanese Unexamined Patent Publication No. 2016-82101

A semi-transmissive reflective layer is used for the microcavity (MC) structure. In one example, the transflective reflective layer is located on the first layer, the first layer containing the transparent conductive material, on the second layer and the second layer containing the silver atom, and the third layer containing the transparent conductive material. Includes. The present inventor examined the semi-transmissive reflective layer according to this example, and as a result, the end portion of the second layer protrudes from the end portion of the first layer and the end portion of the third layer, and the end portion of the semi-transmissive reflective layer It has been found that the insulating film covering the light emitting portion (specifically, the insulating film defining the light emitting portion) may be pierced. Penetration of the insulating film by the end of the second layer can cause a short circuit of the electrodes in the light emitting device.

As an example of the problem to be solved by the present invention, it is possible to prevent the end portion of the second layer containing a silver atom between the first layer containing the transparent conductive material and the third layer, respectively, from penetrating the insulating film. Be done.

The first invention is
A half containing a first layer containing a transparent conductive material, a second layer located on the first layer and containing a silver atom, and a third layer located on the second layer and containing a transparent conductive material. The process of forming the transmissive reflective layer and
The step of patterning the semi-transmissive reflective layer by etching and
After patterning the semi-transmissive reflective layer, a step of applying a solution for forming an insulating film covering the end portion of the semi-transmissive reflective layer, and a step of applying the solution.
After applying the solution, the step of heating the semi-transmissive reflective layer and
A step of forming an organic layer and a reflective layer on the semitransparent reflective layer, and
It is a manufacturing method of a light emitting device including.

The second invention is
A light emitting part including a resonance structure that resonates light generated in an organic layer located between a reflective layer and a transflective reflective layer,
A coating insulating film that covers the end of the transflective reflective layer,
With
The transflective layer is
The first layer containing the transparent conductive material and
A second layer located on the first layer and containing a silver atom,
A third layer located on the second layer and containing a transparent conductive material,
Have,
The second layer is a light emitting device having a protruding portion protruding outside the semi-transmissive reflective layer from the end portion of the first layer and the end portion of the third layer.

It is sectional drawing which shows the light emitting device which concerns on embodiment. It is a figure for demonstrating the 1st example of the operation of the light emitting device shown in FIG. It is a figure for demonstrating the 2nd example of the operation of the light emitting device shown in FIG. It is a figure for demonstrating an example of the manufacturing method of the light emitting device shown in FIG. It is a figure for demonstrating an example of the manufacturing method of the light emitting device shown in FIG. It is a figure for demonstrating an example of the manufacturing method of the light emitting device shown in FIG. It is a figure for demonstrating an example of the manufacturing method of the light emitting device shown in FIG. It is a figure which shows the 1st modification of FIG. It is a figure which shows the 2nd modification of FIG. It is a top view which shows the light emitting device which concerns on Example. It is the figure which removed the reflective layer from FIG. It is the figure which removed the insulating film from FIG. FIG. 10 is a cross-sectional view taken along the line AA of FIG.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. In all drawings, similar components are designated by the same reference numerals, and description thereof will be omitted as appropriate.

FIG. 1 is a cross-sectional view showing a light emitting device 10 according to an embodiment.

The outline of the light emitting device 10 will be described with reference to FIG. The light emitting device 10 includes a light emitting unit 142 and an insulating film 150. The light emitting unit 142 includes a laminated structure of the semi-transmissive reflective layer 110, the organic layer 120, and the reflective layer 130 in the opening 152 of the insulating film 150. In other words, the insulating film 150 defines the light emitting portion 142 by the opening 152. Within the opening 152, the organic layer 120 is located between the transflective reflective layer 110 and the reflective layer 130. In particular, in the example shown in FIG. 1, the transflective reflective layer 110 functions as an anode (first electrode), and the reflective layer 130 functions as a cathode (second electrode).

The light emitting unit 142 has a resonance structure (microcavity (MC) structure) in which the light generated in the organic layer 120 is resonated by the semitransparent reflection layer 110 and the reflection layer 130. Therefore, the light generated in the organic layer 120 is mainly emitted from the semi-transmissive reflective layer 110, and the wavelength spectrum of the light emitted from the semi-transmissive reflective layer 110 has a steep peak.

The transflective layer 110 has a first layer 112, a second layer 114, and a third layer 116. The first layer 112 contains a transparent conductive material. The second layer 114 is located on the first layer 112 and contains a silver atom. The third layer 116 is located on the second layer 114 and contains a transparent conductive material.

The second layer 114 has a protruding portion 114a, and the protruding portion 114a protrudes outside the transflective layer 110 from the end portion of the first layer 112 and the end portion of the third layer 116. In particular, in the example shown in FIG. 1, the protruding portion 114a of the second layer 114 bulges in the thickness direction of the transflective reflective layer 110. As a result, the thickness of the protruding portion 114a of the second layer 114 is thicker than the thickness of the portion of the second layer 114 between the first layer 112 and the third layer 116. Such a structure of the protrusion 114a of the second layer 114 is formed due to the manufacturing process of the light emitting device 10, as will be described later with reference to FIGS. 4 to 7.

Further, in the example shown in FIG. 1, the end portion of the first layer 112 is located inside the semitransparent reflection layer 110 with respect to the end portion of the third layer 116. Such structures at the ends of the first layer 112 and the ends of the third layer 116 are formed due to the manufacturing process of the light emitting device 10, as will be described later with reference to FIGS. 4 to 7.

In the example shown in FIG. 1, the insulating film 150 is a coated insulating film. That is, as will be described later with reference to FIGS. 4 to 7, the insulating film 150 is formed by a coating process. As will be described later with reference to FIGS. 4 to 7, the present inventor has formed the insulating film 150 by a coating process to break through the insulating film 150 by the end portion (that is, the protruding portion 114a) of the second layer 114. It was found that it is possible to suppress. That is, according to the example shown in FIG. 1, it is possible to prevent the end portion (that is, the protruding portion 114a) of the second layer 114 from penetrating the insulating film 150.

In another example, the insulating film 150 does not have to be a coated insulating film, and may be, for example, a CVD (Chemical Vapor Deposition) film or a sputtered film. That is, the insulating film 150 may be formed by CVD or sputtering. Even when the insulating film 150 is formed by CVD or sputtering, if the insulating film 150 is sufficiently thick, the end portion (that is, the protruding portion 114a) of the second layer 114 breaks through the insulating film 150. It can be suppressed. However, the present inventor considers that the time and cost for forming the insulating film 150 by CVD or sputtering to a thickness sufficient to suppress the penetration of the insulating film 150 is larger than the time and cost when the insulating film 150 is formed by the coating process. I found that it would be. Therefore, from the viewpoint of time and cost, the insulating film 150 is preferably formed by the coating process.

Next, the details of the light emitting device 10 will be described with reference to FIG. The light emitting device 10 includes a substrate 100, a semi-transmissive reflective layer 110, an organic layer 120, a reflective layer 130, and an insulating film 150.

The substrate 100 has a first surface 102 and a second surface 104. The transflective reflective layer 110, the organic layer 120, the reflective layer 130, and the insulating film 150 are located on the first surface 102. The second surface 104 is on the opposite side of the first surface 102.

The substrate 100 has translucency and insulation. In one example, the substrate 100 can be a glass substrate or a resin substrate.

The transflective layer 110 includes the first layer 112, the second layer 114, and the third layer 116 in this order from the first surface 102 of the substrate 100.

The first layer 112 contains a transparent conductive material and is therefore a transparent conductive layer. Specifically, the first layer 112 contains, for example, at least one of IZO (Indium Zinc Oxide) and ITO (Indium Tin Oxide).

The second layer 114 contains silver atoms, specifically silver or a silver alloy. More specifically, the second layer 114 contains Ag-Pd-Cu (APC).

The third layer 116 contains a transparent conductive material and is therefore a transparent conductive layer. Specifically, the first layer 112 contains, for example, at least one of IZO (Indium Zinc Oxide) and ITO (Indium Tin Oxide). The third layer 116 may contain the same material as the material contained in the first layer 112, or may contain a material different from the material contained in the first layer 112.

The organic layer 120 can emit light by organic electroluminescence (EL). In one example, the organic layer 120 includes a hole injecting layer (HIL), a hole transporting layer (HTL), a light emitting layer (EML), an electron transporting layer (ETL) and an electron injecting layer (EIL). In this example, holes are injected into the EML from the transflective layer 110 via the HIL and HTL, electrons are injected into the EML from the reflective layer 130 via the EIL and ETL, and the holes and electrons are in the EML. It recombines inside and emits light.

In the example shown in FIG. 1, the organic layer 120 is not only located inside the opening 152 of the insulating film 150, but also extends outside the insulating film 150. However, in another example, the organic layer 120 does not have to extend to the outside of the insulating film 150.

The reflective layer 130 is a metal conductive layer. Specifically, the reflective layer 130 contains, for example, at least one of aluminum, an aluminum alloy, silver and a silver alloy.

As described above, in the example shown in FIG. 1, the insulating film 150 is a coated insulating film. Therefore, the insulating film 150 contains at least one of an organic insulating material, specifically, for example, polyimide, siloxane, and epoxy. In particular, when the insulating film 150 is a coated insulating film, the thickness of the insulating film 150 is 400 nm or more and 2000 nm or less.

As described above, in another example, the insulating film 150 may be a CVD film or a sputtered film. Therefore, the insulating film 150 may contain an inorganic insulating material, specifically, for example, a silicon oxide (SiO ₂ ) formed by CVD or a silicon oxynitride (SiON) formed by sputtering.

In the example shown in FIG. 1, the insulating film 150 has translucency. Therefore, the light from the outside of the light emitting device 10 can pass through the insulating film 150. Therefore, it is possible to suppress a decrease in the transmittance of the light emitting device 10 due to the insulating film 150.

In the example shown in FIG. 1, the light emitting device 10 is a bottom emission, and the second surface 104 of the substrate 100 functions as a light emitting surface of the light emitting device 10. Specifically, the light emitting device 10 includes a light emitting unit 142. The light emitting unit 142 includes the semitransparent reflective layer 110, the organic layer 120, and the reflective layer 130 in this order from the first surface 102 of the substrate 100. Therefore, the light emitting unit 142 is located on the first surface 102 side of the substrate 100. The light emitted from the light emitting unit 142 passes through the substrate 100 and is emitted from the second surface 104 of the substrate 100.

FIG. 2 is a diagram for explaining a first example of the operation of the light emitting device 10 shown in FIG. In the example shown in FIG. 2, the light emitted from the light emitting unit 142 passes through the substrate 100 and is reflected by Fresnel reflection on the second surface 104 of the substrate 100.

According to the example shown in FIG. 2, the amount of light leaking toward the opposite side of the light emitting surface (second surface 104 of the substrate 100) of the light emitting device 10 can be suppressed by the protruding portion 114a of the second layer 114. Specifically, in the example shown in FIG. 2, the protruding portion 114a of the second layer 114 protrudes outside the semitransparent reflective layer 110 from the end portion of the first layer 112 and the end portion of the second layer 114. .. Therefore, as shown in FIG. 2, the light reflected by the Fresnel reflection on the second surface 104 of the substrate 100 can be blocked by the protrusion 114a. In particular, in the example shown in FIG. 2, the surface of the protrusion 114a has irregularities, so that light is scattered on the surface of the protrusion 114a. In this way, the amount of light leaking toward the opposite side of the light emitting surface (second surface 104 of the substrate 100) of the light emitting device 10 can be suppressed by the protruding portion 114a of the second layer 114.

Further, according to the example shown in FIG. 2, glare due to the protrusion 114a of the second layer 114 when viewed from the first surface 102 side of the substrate 100 (particularly, glare due to light scattering on the surface of the protrusion 114a). Can be suppressed. Specifically, in the example shown in FIG. 2, the end portion of the reflective layer 130 is located farther from the light emitting portion 142 than the protruding portion 114a of the second layer 114. Therefore, the protruding portion 114a of the second layer 114 overlaps with the reflective layer 130 in the direction perpendicular to the first surface 102 of the substrate 100. Therefore, when the light emitting device 10 is viewed from the first surface 102 side of the substrate 100, the protruding portion 114a of the second layer 114 is hidden behind the reflective layer 130. In this way, glare due to the protruding portion 114a of the second layer 114 when viewed from the first surface 102 side of the substrate 100 can be suppressed.

FIG. 3 is a diagram for explaining a second example of the operation of the light emitting device 10 shown in FIG. In the example shown in FIG. 3, the light emitted from the second layer 114 is reflected by the substrate 100 and the second layer 114 and propagates through the first layer 112.

According to the example shown in FIG. 3, the amount of light propagating through the first layer 112 and leaking can be suppressed by the protruding portion 114a of the second layer 114. Specifically, in the example shown in FIG. 3, the protruding portion 114a bulges toward both the first layer 112 side and the third layer 116 side. Therefore, as shown in FIG. 3, the light propagating in the first layer 112 can be blocked by the protrusion 114a. In particular, in the example shown in FIG. 3, the surface of the protrusion 114a has irregularities in the same manner as in the example shown in FIG. 2, and therefore light is scattered on the surface of the protrusion 114a. In this way, the amount of light propagating through the first layer 112 and leaking can be suppressed by the protruding portion 114a of the second layer 114.

Further, according to the example shown in FIG. 3, glare due to the protrusion 114a of the second layer 114 when viewed from the first surface 102 side of the substrate 100 (particularly, glare due to light scattering on the surface of the protrusion 114a). Can be suppressed. Specifically, in the example shown in FIG. 3, the end portion of the reflective layer 130 is located outside the light emitting portion 142 with respect to the protruding portion 114a of the second layer 114. Therefore, the protruding portion 114a of the second layer 114 overlaps with the reflective layer 130 in the direction perpendicular to the first surface 102 of the substrate 100. Therefore, when the light emitting device 10 is viewed from the first surface 102 side of the substrate 100, the protruding portion 114a of the second layer 114 is hidden behind the reflective layer 130. In this way, glare due to the protruding portion 114a of the second layer 114 when viewed from the first surface 102 side of the substrate 100 can be suppressed.

Each figure from FIG. 4 to FIG. 7 is a diagram for explaining an example of the manufacturing method of the light emitting device 10 shown in FIG. In this example, the light emitting device 10 is manufactured as follows.

First, as shown in FIG. 4, the first layer 112, the second layer 114, and the third layer 116 are sequentially formed on the first surface 102 of the substrate 100. The first layer 112, the second layer 114, and the third layer 116 are formed by, for example, sputtering. Next, the mask film 300 is formed on the third layer 116. Specifically, the mask film 300 is a resist film. In the example shown in FIG. 4, the mask film 300 is patterned by lithography.

Then, as shown in FIG. 5, the transflective reflective layer 110 is patterned by etching. Specifically, the semitransparent reflective layer 110 is patterned by wet etching using the mask film 300 as a mask. Therefore, the portion of the semitransparent reflective layer 110 that does not overlap with the mask film 300 is removed by etching. Next, the mask film 300 is removed.

In the example shown in FIG. 5, after etching the semi-transmissive reflective layer 110, the second layer 114 has a protruding portion 114a. The protrusion 114a is generated due to the difference in the etching rates of the first layer 112, the second layer 114, and the third layer 116, respectively. That is, the etching rate of the second layer 114 is lower than the etching rate of the first layer 112 and the etching rate of the third layer 116. Therefore, after etching the semi-transmissive reflective layer 110, the second layer 114 will have a protruding portion 114a. The etching rate can be controlled by adjusting the mass ratio of each material contained in the etchant, for example.

Further, as shown in FIG. 5, after etching the semitransparent reflective layer 110, the end portion of the first layer 112 is located inside the semitransparent reflective layer 110 with respect to the end portion of the third layer 116. .. This is because the etching rate increases as the distance from the mask film 300 increases.

Then, as shown in FIG. 6, the solution 250 is applied and the solution 250 is dried. The solution 250 becomes an insulating film 150 (FIG. 1) by drying and curing. That is, the insulating film 150 (FIG. 1) is formed by the coating process.

Then, as shown in FIG. 7, the solution 250 and the transflective reflective layer 110 are heated. By heating, the organic material contained in the solution 250 is cured to form the insulating film 150. Further, by heating, the metal contained in the second layer 114, particularly silver or a silver alloy, diffuses toward the end portion of the second layer 114, and the protruding portion 114a of the second layer 114 expands. Therefore, after this heating, the thickness of the protruding portion 114a of the second layer 114 becomes thicker than the thickness of the portion of the second layer 114 between the first layer 112 and the third layer 116.

According to the example shown in FIG. 7, it is possible to prevent the end portion (that is, the protruding portion 114a) of the second layer 114 from breaking through the insulating film 150. Specifically, the insulating film 150 is formed by a coating process. The present inventor has excellent flexibility in the insulating film formed by the coating process, and therefore the insulating film 150 is deformable as the end of the second layer 114 expands, and thus the second layer 114. It was presumed that the penetration of the insulating film 150 by the end portion (that is, the protruding portion 114a) was suppressed.

Next, the organic layer 120 is formed on the semitransparent reflective layer 110 and the insulating film 150. Next, the reflective layer 130 is formed on the organic layer 120.

In this way, the light emitting device 10 shown in FIG. 1 is manufactured.

The heating for expanding the end portion of the second layer 114 is not limited to the heating in the step of forming the insulating film 150. The end of the second layer 114 may also expand, for example, during heating in the process of forming the organic layer 120.

FIG. 8 is a diagram showing a first modification of FIG. By adjusting the wet etching conditions (for example, the mass ratio of each material contained in the etchant), as shown in FIG. 8, the end of the second layer 114 is changed to the end of the first layer 112 and the third layer 116. Can be aligned to the edge of.

According to the present inventor, even when the ends of the second layer 114 are aligned with the ends of the first layer 112 and the ends of the third layer 116 as shown in FIG. 8, the second layer is heated by heating. It has been found that the end of 114 expands to have a protrusion 114a as shown in FIG. That is, the protruding portion 114a of the second layer 114 is formed regardless of the position of the end portion of the second layer 114 after etching.

FIG. 9 is a diagram showing a second modification of FIG. By adjusting the wet etching conditions (for example, the mass ratio of each material contained in the etchant), as shown in FIG. 9, the end of the second layer 114 is changed to the end of the first layer 112 and the third layer 116. It can be located inside the edge of.

According to the present inventor, even when the end portion of the second layer 114 is located inside the end portion of the first layer 112 and the end portion of the third layer 116 as shown in FIG. It has been found that the end of the layer 114 expands to have a protrusion 114a as shown in FIG. That is, the protruding portion 114a of the second layer 114 is formed regardless of the position of the end portion of the second layer 114 after etching.

As described above, according to the present embodiment, it is possible to prevent the end portion (that is, the protruding portion 114a) of the second layer 114 from breaking through the insulating film 150.

Further, according to the present embodiment, the amount of light leaking toward the opposite side of the light emitting surface (second surface 104 of the substrate 100) of the light emitting device 10 can be suppressed by the protruding portion 114a of the second layer 114.

FIG. 10 is a plan view showing the light emitting device 10 according to the embodiment. FIG. 11 is a diagram in which the reflective layer 130 is removed from FIG. FIG. 12 is a diagram in which the insulating film 150 is removed from FIG. FIG. 13 is a cross-sectional view taken along the line AA of FIG. For the sake of explanation, the organic layer 120 is not shown in FIGS. 10 to 12. In the examples shown in FIGS. 10 to 13, the Y direction is defined as the longitudinal direction of each of the plurality of light emitting portions 142, and the X direction is a direction intersecting the Y direction, specifically, a direction orthogonal to the Y direction. It is stipulated.

The outline of the light emitting device 10 will be described with reference to FIG. The light emitting device 10 has translucency. That is, the other side can be seen across the light emitting device 10. This is because the light emitting device 10 has a light transmitting unit 144 between adjacent light emitting units 142. Light from the outside of the light emitting device 10 can pass through the translucent portion 144. Therefore, the light emitting device 10 has translucency.

In particular, the semi-transmissive reflective layer 110 and the insulating film 150 of the light emitting device 10 shown in FIG. 13 have the same configurations as the semi-transmitted reflective layer 110 and the insulating film 150 of the light emitting device 10 shown in FIG. 1, respectively. That is, the transflective reflective layer 110 has a first layer 112, a second layer 114, and a third layer 116, the second layer 114 has a protruding portion 114a, and the insulating film 150 is coated. Formed by the process. Therefore, according to this embodiment, it is possible to prevent the end portion (that is, the protruding portion 114a) of the second layer 114 from penetrating the insulating film 150 in the same manner as in the example shown in FIG. Further, according to this embodiment, the amount of light leaking toward the opposite side of the light emitting surface (second surface 104 of the substrate 100) of the light emitting device 10 is measured in the second layer 114 in the same manner as in the example shown in FIG. It can be suppressed by the protruding portion 114a of.

In particular, in this embodiment, the amount of light leaking through the translucent portion 144 toward the opposite side of the light emitting surface (second surface 104 of the substrate 100) of the light emitting device 10 can be suppressed by the protruding portion 114a of the second layer 114. can. Specifically, in this embodiment, the translucent portion 144 is located between the adjacent light emitting portions 142. As described above, the light emitting device 10 is translucent due to the translucent portion 144. On the other hand, the light transmitting unit 144 can transmit the light emitted from the light emitting unit 142 toward the opposite side of the light emitting surface (second surface 104 of the substrate 100) of the light emitting device 10. In this embodiment, the light directed to the opposite side of the light emitting surface (second surface 104 of the substrate 100) of the light emitting device 10 can be blocked by the protruding portion 114a of the second layer 114. Therefore, the amount of light leaking through the translucent portion 144 toward the opposite side of the light emitting surface (second surface 104 of the substrate 100) of the light emitting device 10 can be suppressed by the protruding portion 114a of the second layer 114.

Next, the details of the plane layout of the light emitting device 10 will be described with reference to FIGS. 10 to 12. The light emitting device 10 includes a substrate 100, a plurality of transflective reflective layers 110, a plurality of reflective layers 130, and a plurality of insulating films 150.

In the examples shown in FIGS. 10 to 12, the shape of the substrate 100 is a rectangle having a long side along the X direction and a short side along the Y direction. However, the shape of the substrate 100 is not limited to the examples shown in FIGS. 10 to 12. The shape of the substrate 100 may be, for example, a circle or a polygon other than a rectangle.

The plurality of transflective reflective layers 110 are located apart from each other, and specifically, they are arranged in a row along the X direction. Each of the plurality of transflective reflective layers 110 extends along the Y direction of the substrate 100.

Each of the plurality of transflective reflective layers 110 (first electrode) is connected to the first wiring 214 via each of the plurality of first connecting portions 212. The first wiring 214 extends in the X direction. The voltage from the outside is supplied to the semitransparent reflective layer 110 via the first wiring 214 and the first connecting portion 212. In the example shown in FIG. 12, the semi-transmissive reflective layer 110 and the first connecting portion 212 are integrated with each other.

Each of the plurality of reflective layers 130 overlaps each of the plurality of transflective reflective layers 110. The plurality of reflective layers 130 are located apart from each other, and specifically, they are arranged in a row along the X direction. Each of the plurality of reflective layers 130 extends in the Y direction of the substrate 100.

Each of the plurality of reflective layers 130 (second electrode) is connected to the second wiring 234 via each of the plurality of second connecting portions 232. The second wiring 234 extends in the X direction. The voltage from the outside is supplied to the reflective layer 130 via the second wiring 234 and the second connecting portion 232.

Each of the plurality of insulating films 150 overlaps each of the plurality of transflective reflective layers 110. The plurality of insulating films 150 are located apart from each other, and specifically, they are arranged in a row along the X direction. Each of the plurality of insulating films 150 extends in the Y direction.

Each of the plurality of insulating films 150 has an opening 152. The opening 152 extends in the Y direction. The insulating film 150 defines the light emitting portion 142 by the opening 152.

The light emitting device 10 has a light emitting region 140, and the light emitting region 140 has a plurality of light emitting units 142 and a plurality of light transmitting units 144. The light emitting unit 142 and the translucent unit 144 are alternately arranged along the X direction. The light emitting portion 142 is defined by the opening 152 of the insulating film 150. The light-transmitting portion 144 does not overlap with the light-shielding member, particularly the reflective layer 130 in the examples shown in FIGS. 10 to 12. Therefore, the light from the outside can pass through the translucent portion 144.

Next, the details of the cross section of the light emitting device 10 will be described with reference to FIG. The light emitting device 10 includes a substrate 100, a semi-transmissive reflective layer 110, an organic layer 120, a reflective layer 130, and an insulating film 150. The semi-transmissive reflective layer 110, the organic layer 120, the reflective layer 130 and the insulating film 150 of the light emitting device 10 shown in FIG. 13 are the semi-transmitted reflective layer 110, the organic layer 120, the reflective layer 130 and the light emitting device 10 shown in FIG. Each has the same configuration as the insulating film 150.

In particular, in the example shown in FIG. 13, the organic layer 120 extends over a plurality of light emitting portions 142. That is, the plurality of light emitting units 142 have a common organic layer (that is, the organic layer 120). Therefore, in the example shown in FIG. 13, the plurality of light emitting units 142 emit light of the same color.

The reflective layer 130 has an end portion 130a and an end portion 130b, and the insulating film 150 has an end portion 150a and an end portion 150b. The end 130a and the end 150a face each other in the same direction. The end 130b and the end 150b face each other in the same direction and are on opposite sides of the end 130a and 150a, respectively.

When viewed from a direction perpendicular to the first surface 102, the first surface 102 of the substrate 100 has a plurality of regions 102a, a plurality of regions 102b, and a plurality of regions 102c. Each of the plurality of regions 102a extends from a position overlapping the end portion 130a of the reflective layer 130 to a position overlapping the end portion 130b. Each of the plurality of regions 102b is from a position where it overlaps with the end portion 130a of the reflective layer 130 to a position where it overlaps with the end portion 150a of the insulating film 150 (or from a position where it overlaps with the end portion 130b of the reflective layer 130 to the end portion 150b of the insulating film 150. (To the position where it overlaps with). Each of the plurality of regions 102c extends from a position overlapping the end 150a of one insulating film 150 of the two adjacent insulating films 150 to a position overlapping the end 150b of the other insulating film 150.

The region 102a overlaps the reflective layer 130, and therefore, the light emitting device 10 has the lowest light transmittance in the region overlapping the region 102a among the regions overlapping the region 102a, the region 102b, and the region 102c. There is. The region 102c does not overlap with either the reflective layer 130 or the insulating film 150, and therefore, the light emitting device 10 is the highest in the region overlapping the region 102a, the region 102b, and the region 102c among the regions overlapping the region 102a, the region 102b, and the region 102c. It has light transmittance. The region 102b does not overlap with the reflective layer 130 but overlaps with the insulating film 150. Therefore, the light emitting device 10 has a higher light transmittance in the region overlapping with the region 102b than the light transmittance in the region overlapping with the region 102a, and the region 102b overlaps with the insulating film 150. It has a light transmittance lower than the light transmittance in the region overlapping with 102c.

In the example shown in FIG. 13, the light transmittance of the light emitting device 10 as a whole is high. Specifically, the width of the region having high light transmittance, that is, the width d3 of the region 102c is widened, and specifically, the width d3 of the region 102c is wider than the width d2 of the region 102b (). d3> d2). In this way, the light transmittance of the light emitting device 10 as a whole is high.

In the example shown in FIG. 13, it is prevented that the light emitting device 10 absorbs a large amount of light having a specific wavelength. Specifically, the width of the region through which light passes through the insulating film 150, that is, the width d2 of the region 102b is narrowed, and specifically, the width d2 of the region 102b is narrower than the width d3 of the region 102c. (D2 <d3). The insulating film 150 may absorb light having a specific wavelength. Even in such a case, in the above-described configuration, the amount of light transmitted through the insulating film 150 can be reduced. In this way, it is prevented that the light emitting device 10 absorbs a large amount of light having a specific wavelength.

The width d3 of the region 102c may be wider than the width d1 of the region 102a (d3> d1), may be narrower than the width d1 of the region 102a (d3 <d1), or the width of the region 102a. It may be equal to d1 (d3 = d1).

In one example, the ratio d2 / d1 of the width d2 of the region 102b to the width d1 of the region 102a is 0 or more and 0.2 or less (0 ≦ d2 / d1 ≦ 0.2), and the region 102c with respect to the width d1 of the region 102a. The ratio d3 / d1 of the width d3 is 0.3 or more and 2 or less (0.3 ≦ d3 / d1 ≦ 2). More specifically, in one example, the width d1 of the region 102a is 50 μm or more and 500 μm or less, the width d2 of the region 102b is 0 μm or more and 100 μm or less, and the width d3 of the region 102c is 15 μm or more and 1000 μm or less. ..

In one example, the light emitting device 10 can be used as a high mount stop lamp for an automobile. In this case, the light emitting device 10 can be attached to the rear window of the automobile. Further, in this case, the light emitting device 10 emits, for example, red light.

Next, an example of the manufacturing method of the light emitting device 10 shown in FIGS. 10 to 13 will be described.

First, the first layer 112, the second layer 114, and the third layer 116 are formed on the first surface 102 of the substrate 100 in the same manner as in the example shown in FIG. Next, the mask film 300 on the third layer 116 is formed.

Next, the semitransparent reflective layer 110 is patterned by etching in the same manner as in the example shown in FIG. In this patterning, a plurality of semitransparent reflective layers 110 are formed by etching a common transflective reflective layer. Therefore, the thicknesses of the plurality of transflective reflective layers 110 are substantially equal to each other. More specifically, the thickness of the first layer 112 of the plurality of transflective layers 110 is substantially equal to each other, and the thickness of the second layer 114 of the plurality of transflective layers 110 is substantially equal to each other. The thickness of the third layer 116 of the plurality of transflective reflective layers 110 is substantially equal to each other.

Then, the solution 250 is applied and the solution 250 is dried in the same manner as in the example shown in FIG.

The solution 250 and the transflective reflective layer 110 are then heated in the same manner as in the example shown in FIG.

Next, the organic layer 120 is formed on the semitransparent reflective layer 110 and the insulating film 150. Next, the reflective layer 130 is formed on the organic layer 120.

In this way, the light emitting device 10 shown in FIGS. 10 to 13 is manufactured.

Also in this embodiment, it is possible to prevent the end portion (that is, the protruding portion 114a) of the second layer 114 from penetrating the insulating film 150.

Further, also in this embodiment, the amount of light leaking toward the opposite side of the light emitting surface (second surface 104 of the substrate 100) of the light emitting device 10 is measured by the second layer 114 in the same manner as in the example shown in FIG. It can be suppressed by the protrusion 114a.

Although the embodiments and examples have been described above with reference to the drawings, these are examples of the present invention, and various configurations other than the above can be adopted.

10 Light emitting device 100 Substrate 102 First surface 102a Region 102b Region 102c Region 104 Second surface 110 Semi-transmissive reflective layer 112 First layer 114 Second layer 114a Projection 116 Third layer 120 Organic layer 130 Reflective layer 130a End 130b End Part 140 Light emitting area 142 Light emitting part 144 Light transmitting part 150 Insulating film 150a End part 150b End part 152 Opening 212 First connection part 214 First wiring 232 Second connection part 234 Second wiring 250 Solution 300 Mask film

Claims (7)

It has a light emitting part including a resonance structure that resonates the light generated in the organic layer located between the reflective layer and the transflective reflective layer.
The transflective layer is
The first layer containing the transparent conductive material and
A second layer located on the first layer and containing a silver atom,
A third layer located on the second layer and containing a transparent conductive material,
Have,
The second layer is a light emitting device having a protruding portion protruding outside the semi-transmissive reflective layer from the end portion of the first layer and the end portion of the third layer. In the light emitting device according to claim 1,
A light emitting device in which the thickness of the protruding portion of the second layer is thicker than the thickness of the portion of the second layer between the first layer and the third layer. In the light emitting device according to claim 1 or 2.
A light emitting device in which the end portion of the reflective layer is located farther from the light emitting portion than the protruding portion of the second layer. In the light emitting device according to any one of claims 1 to 3,
The reflective layer is a metallic conductive layer and
Each of the first layer and the third layer is a transparent conductive layer.
The second layer is a light emitting device containing Ag-Pd-Cu. In the light emitting device according to any one of claims 1 to 4.
An insulating film covering the end of the transflective reflective layer is provided.
The insulating film is a light emitting device containing at least one of polyimide, siloxane, and epoxy. In the light emitting device according to claim 5,
A light emitting device having a thickness of the insulating film of 400 nm or more and 2000 nm or less. In the light emitting device according to claim 3,
With the plurality of the light emitting units
A light emitting device further comprising a light transmitting unit located between the plurality of light emitting units adjacent to each other.

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