JP2019174812A - Light-emitting device - Google Patents

Abstract

To provide a light-emitting device for improving visibility in a light-emitting device for displaying a predetermined pattern.SOLUTION: A light shielding layer 200 is located between a plurality of light-emitting regions 101 when seen in a direction perpendicular to a substrate 100. The light shielding layer 200 includes a light reflection layer 202 and a light absorption layer 204. The light absorption layer 204 is located closer to the substrate 100 side in a thickness direction than the light reflection layer 202, and has light reflectance lower than that of the light reflection layer 202. Further, when seen in the direction perpendicular to the substrate 100, an end of the light reflection layer 202 is located further inside of the light shielding layer 200 than an end of the light absorption layer 204.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a light emitting device.

  One of the characteristics required for a light-emitting device that displays a predetermined pattern is visibility, for example, that a pattern edge is clear or only a displayed pattern can be recognized. Patent Document 1 describes that a light shielding layer is provided on the light emission surface of a light emitting device in order to improve visibility. Specifically, Patent Document 1 is a technique related to a liquid crystal panel. A light shielding layer is provided on the light emission surface side of the liquid crystal panel. This light shielding layer is provided with a plurality of openings for forming pixels.

  Patent Document 2 describes that a light shielding mask is provided in an optical device using an organic EL element. Specifically, this optical device is formed by forming an organic EL element on a transparent substrate, and further sealing a surface of the transparent substrate on which the organic EL element is formed with a sealing member. The light shielding mask is formed in a region of the sealing member that overlaps the organic EL element.

JP-A-2005-122101 JP 2008-129042 A

  The present inventor has studied to improve the visibility of light emission from each light emitting region in a light emitting device having a plurality of light emitting regions. As one of methods for improving the visibility of such a light emitting device, there is a method of providing a light shielding layer in a region located between a plurality of light emitting regions on the light emission surface of the light emitting device. However, in general, the material used for the light shielding layer often has high visible light reflectance. For this reason, when a part of light from a certain light emitting region travels obliquely toward the light shielding layer, the light is reflected by the light shielding layer. When the light emitting region is formed of an organic EL element, one of the electrodes of the organic EL element is formed of a metal electrode having high reflectivity, for example, aluminum. At least a part of the reflected light is reflected by the light emitting region adjacent to the light emitting region that is emitting light (for example, the above-described metal electrode having high reflectivity) and is emitted to the outside. When the adjacent light emitting region is a light emitting region that does not emit light, when such a reflection occurs, the light emitting region that does not emit light originally appears to emit light. In this case, the visibility of the light emission from each light emission area | region will fall.

  An example of a problem to be solved by the present invention is to improve visibility in a light emitting device that displays a predetermined pattern.

The invention according to claim 1 is a substrate;
A plurality of light emitting regions provided on the first surface side of the substrate;
A light shielding layer provided on the second surface side of the substrate and positioned between the light emitting regions when viewed from a direction perpendicular to the substrate;
With
The light shielding layer is
The first layer;
A second layer located closer to the substrate than the first layer in the thickness direction;
Have
The second layer has a lower reflectance than the first layer,
When viewed from a direction perpendicular to the substrate, the end portion of the first layer is a light emitting device positioned more inside the light shielding layer than the end portion of the second layer.

The invention according to claim 4 is a substrate;
A plurality of light emitting regions provided on the first surface side of the substrate;
A light shielding layer provided on the second surface side of the substrate and positioned between the light emitting regions when viewed from a direction perpendicular to the substrate;
With
The light shielding layer is
The first layer;
A second layer located closer to the substrate than the first layer;
A third layer covering at least a part of an end of the second layer;
Have
The second layer and the third layer are light emitting devices having a lower reflectance than the first layer.

  The above-described object and other objects, features, and advantages will become more apparent from the preferred embodiments described below and the accompanying drawings.

It is a top view of the light-emitting device concerning a 1st embodiment. It is AA sectional drawing of FIG. It is a figure which shows the modification of FIG. It is sectional drawing for demonstrating the formation method of a light shielding layer. It is sectional drawing for demonstrating the formation method of a light shielding layer. It is sectional drawing which shows the structure of the light-emitting device which concerns on a comparative example. It is sectional drawing for demonstrating the function of the light absorption layer in the light-emitting device which concerns on 1st Embodiment. It is sectional drawing of the light-emitting device which concerns on 2nd Embodiment. It is sectional drawing for demonstrating the formation method of the light shielding layer which concerns on 2nd Embodiment. It is a figure which shows the modification of FIG. It is sectional drawing which shows the structure of the light-emitting device which concerns on an Example. It is a figure for demonstrating the manufacturing method of the light-emitting device in an Example. It is a figure for demonstrating the manufacturing method of the light-emitting device in an Example. It is a figure for demonstrating the manufacturing method of the light-emitting device in an Example.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In all the drawings, the same reference numerals are given to the same components, and the description will be omitted as appropriate.

(First embodiment)
FIG. 1 is a plan view of a light emitting device 10 according to the first embodiment. FIG. 2 is a cross-sectional view taken along the line AA of FIG. The light emitting device 10 is used for displaying characters, symbols, and the like in an optical device, for example, and includes a substrate 100, a plurality of light emitting regions 101, and a light shielding layer 200. The plurality of light emitting regions 101 are provided on the first surface (for example, the lower surface in FIG. 2) side of the substrate 100. The light shielding layer 200 is provided on the second surface side of the substrate 100 (for example, the upper surface in FIG. 2). As shown in FIG. 2, the light shielding layer 200 is located between the plurality of light emitting regions 101 when viewed from a direction perpendicular to the substrate 100. The light shielding layer 200 includes a light reflection layer 202 (first layer) and a light absorption layer 204 (second layer). The light absorption layer 204 is positioned closer to the substrate 100 than the light reflection layer 202 in the thickness direction, and has a light reflectance lower than that of the light reflection layer 202. A preferable example of the light absorption layer 204 is a layer that absorbs light, and does not include a transparent layer. Further, when viewed from a direction perpendicular to the substrate 100, the end of the light reflecting layer 202 is positioned inside the light shielding layer 200 with respect to the end of the light absorbing layer 204. Details will be described below.

  The substrate 100 is formed of a material that transmits light emitted from the light emitting region 101. The substrate 100 may be a glass substrate or a resin substrate. When the substrate 100 is thin to some extent, the substrate 100 has flexibility. The thickness of the substrate 100 is, for example, not less than 300 μm and not more than 600 μm.

  In the light emitting region 101, for example, light emitting elements independent of each other are formed. This light emitting element is, for example, an organic EL element, but may be another self-light emitting element such as an LED. For example, as shown in FIG. 1, the light emitting region 101 has different planar shapes (for example, letters, numbers, and / or symbols).

  The light shielding layer 200 is formed by laminating a plurality of layers. The plurality of layers include a light reflecting layer 202 and a light absorbing layer 204. In the example illustrated in FIG. 2, the light shielding layer 200 has a configuration in which a light absorption layer 204 and a light reflection layer 202 are laminated in this order on the second surface side of the substrate 100. The light reflecting layer 202 has a function of blocking visible light (for example, light emitted from the light emitting region 101). The light reflecting layer 202 is made of, for example, a metal such as Cr, and the thickness thereof is, for example, not less than 50 nm and not more than 200 nm. The light absorption layer 204 is formed of a material whose reflectance of light emitted from the light emitting region 101 is lower than that of the light reflection layer 202. When the light reflection layer 202 is formed of a metal, the light absorption layer 204 is formed of an oxide (for example, chromium oxide) of the metal. The light absorption layer 204 is formed thinner than the light reflection layer 202. The thickness of the light absorption layer 204 is, for example, 30 nm or more and 70 nm or less. The thickness of the light absorption layer 204 is, for example, equal to or less than the thickness of the light reflection layer 202. However, the thickness of the light absorption layer 204 may be equal to or greater than the thickness of the light reflection layer 202.

  As described above, the light shielding layer 200 is located between the plurality of light emitting regions 101 when viewed from a direction perpendicular to the substrate 100. Specifically, the light shielding layer 200 has a plurality of openings 210. When viewed from a direction perpendicular to the substrate 100, the plurality of openings 210 overlap with different light emitting regions 101 and have the same shape as the overlapping light emitting regions 101. For this reason, by providing the light shielding layer 200, the edge of the pattern indicated by the light emission of the light emitting region 101 becomes sharp. Thereby, the visibility of the pattern which the light-emitting device 10 shows improves.

  Further, when viewed from the direction perpendicular to the substrate 100, the end of the light reflecting layer 202 is positioned inside the light shielding layer 200 with respect to the end of the light absorbing layer 204. In other words, the outline of the opening 210 is defined by the end of the light absorption layer 204. The width of the light reflection layer 202 is smaller than the width of the light absorption layer 204. For this reason, when viewed from the light emitting region 101, at least a part of the end face of the light reflecting layer 202 is covered with the light absorbing layer 204. In addition, the distance from the edge part of the light reflection layer 202 to the edge part of the light absorption layer 204 is 200 nm or more and 500 nm or less, for example. Further, when the thickness of the light shielding layer 200 is t, the distance from the end of the light reflecting layer 202 to the end of the light absorbing layer 204 is, for example, 3 t or less.

  Note that each of the openings 210 may be slightly smaller than the light emitting region 101 when viewed from a direction perpendicular to the substrate 100. In this case, the edge of the opening 210 is located inside the light emitting region 101. In this manner, even if a positional shift occurs between the light emitting region 101 and the light shielding layer 200, the edge of the light shielding layer 200 overlaps the light emitting region 101, and thus the visibility of the light emitting device 10 does not deteriorate. The width of the portion where the light shielding layer 200 and the light emitting region 101 overlap is, for example, 5 μm or more and 40 μm or less.

  Conversely, as shown in FIG. 3, each of the openings 210 may be slightly larger than the light emitting region 101. In this case, the distance from the end of the light shielding layer 200 to the end of the light emitting region 101 is, for example, not less than 0.5 μm and not more than 50 μm. In this case, the light from the light emitting device 10 can be recognized even when the light emitting device 10 is viewed from a slight angle.

  4 and 5 are cross-sectional views for explaining a method for forming the light shielding layer 200. FIG. In the drawing, the light emitting region 101 is not shown. However, before the light shielding layer 200 is formed, the entire light emitting region 101 may not be formed, or at least a part of the light emitting region 101 may be formed.

  First, as shown in FIG. 4A, the light absorption layer 204 is formed on the substrate 100. The light absorption layer 204 is formed by using a vapor deposition method such as sputtering, vapor deposition, or CVD. Next, a mask pattern (for example, a resist pattern: not shown) is formed on the light absorption layer 204, and the light absorption layer 204 is etched through the mask pattern. The etching performed here is, for example, wet etching, but may be dry etching. Thereby, unnecessary portions of the light absorption layer 204 are removed. Thereafter, as shown in FIG. 4B, the mask pattern is removed.

  Next, as shown in FIG. 5, the light reflecting layer 202 is formed on the light absorbing layer 204 and the substrate 100. The light absorption layer 204 and the light reflection layer 202 are formed using a vapor deposition method such as sputtering, vapor deposition, or CVD.

  Thereafter, a mask pattern (for example, a resist pattern: not shown) is formed on the light reflecting layer 202, and the light reflecting layer 202 is etched using the mask pattern as a mask. The etching performed here is, for example, wet etching, but may be dry etching. Thereby, unnecessary portions of the light reflecting layer 202 are removed.

  FIG. 6 is a diagram illustrating a configuration of the light emitting device 10 according to the comparative example, and corresponds to FIG. 2 in the embodiment. The light emitting device 10 has the same configuration as that of the light emitting device 10 according to the embodiment except that the light shielding layer 200 does not include the light absorbing layer 204. Consider a case where a certain light emitting region 101a (the left light emitting region 101 in FIG. 6) emits light and the adjacent light emitting region 101b (the right light emitting region 101 in FIG. 6) does not emit light. In general, light emitted from a light emitting element spreads at a certain angle. For this reason, a part of the light emitted from the light emitting region 101 a is reflected by the light reflecting layer 202, further reflected by the light emitting region 101 b, and then emitted to the outside of the light emitting device 10. In this case, although the light emitting area 101b is not emitting light, the light emitting area 101b appears to be slightly illuminated. In this case, the visibility of the light emitting device 10 is reduced.

  On the other hand, in the present embodiment, the light absorption layer 204 is formed on the surface of the light shielding layer 200 facing the substrate 100. The light absorption layer 204 has a lower light reflectance than the light reflection layer 202. Therefore, as shown in FIG. 7, even when a part of the light emitted from the light emitting region 101a is incident on the light shielding layer 200, the light reflected from the light shielding layer 200 toward the light emitting region 101b is reduced, or almost Disappear. Therefore, the visibility of the light emitting device 10 is improved.

  Further, in the comparative example shown in FIG. 6, a part of the light emitted from the light emitting region 101 is reflected by the end face of the light reflecting layer 202. In this case, the edge of the light emitting region 101 appears to blur, and as a result, the visibility of the light emitting device 10 decreases.

  On the other hand, in the present embodiment, when viewed from the direction perpendicular to the substrate 100, the end of the light reflecting layer 202 is farther from the light emitting region 101 than the end of the light reflecting layer 202. When viewed from the light emitting region 101, at least a part of the end face of the light reflecting layer 202 is covered with the light absorbing layer 204. Therefore, the light emitted from the light emitting region 101 can be suppressed from being reflected by the end face of the light reflecting layer 202. This effect increases as the distance between the end of the light reflecting layer 202 and the end of the light absorbing layer 204 increases.

(Second Embodiment)
FIG. 8 is a cross-sectional view illustrating a configuration of the light emitting device 10 according to the second embodiment, and corresponds to FIG. 2 in the first embodiment. The light emitting device 10 according to the present embodiment has the same configuration as that of the light emitting device 10 according to the first embodiment, except that the light shielding layer 200 includes a light absorption layer 206 (third layer).

  The light absorption layer 206 is located on the opposite side of the substrate 100 with the light reflection layer 202 (first layer) interposed therebetween. In other words, the light shielding layer 200 has a configuration in which the light absorption layer 204, the light reflection layer 202, and the light absorption layer 206 are stacked in this order. The light absorption layer 206 has a lower reflectance than the light reflection layer 202. When viewed from a direction perpendicular to the substrate 100, the end of the light reflecting layer 202 is located inside the light shielding layer 200 with respect to the end of the light absorbing layer 206. The light absorption layer 206 is formed of the same material as the light absorption layer 204. For example, when the light reflection layer 202 is formed of a metal, the light absorption layer 204 is formed of an oxide (for example, chromium oxide) of the metal. The light absorption layer 206 is formed thinner than the light reflection layer 202. The thickness of the light absorption layer 206 is, for example, equal to or less than the thickness of the light reflection layer 202. However, the thickness of the light absorption layer 206 may be equal to or greater than the thickness of the light reflection layer 202.

  FIG. 9 is a cross-sectional view for explaining the method for manufacturing the light shielding layer 200 according to this embodiment. First, as illustrated in FIG. 9A, the light absorption layer 204, the light reflection layer 202, and the light absorption layer 206 are formed in this order on the substrate 100. The light absorption layer 204, the light reflection layer 202, and the light absorption layer 206 are formed by using a vapor deposition method such as sputtering, vapor deposition, or CVD. Note that in the case where the light absorption layers 204 and 206 are formed of a metal oxide that forms the light reflection layer 202, the light reflection layer 202 and the light absorption layers 204 and 206 are preferably formed in the same processing chamber. . In this case, first, film formation is performed while introducing an oxidizing agent (for example, oxygen gas) into the processing chamber, and then film formation is performed by stopping the introduction of the oxidizing agent while continuing the film formation. By restarting the introduction of the agent, the light absorption layer 204, the light reflection layer 202, and the light absorption layer 206 can be successively formed in this order.

  Next, as shown in FIG. 9B, a mask pattern (for example, a resist pattern: not shown) is formed on the light absorption layer 206, and the light absorption layer 206 and the light reflection layer 202 are formed through this mask pattern. And the light absorption layer 204 are etched. The etching performed here is, for example, wet etching, but may be dry etching. Thereby, unnecessary portions of the light absorption layer 204 are removed. The etching conditions at this time are set so that the etching rate of the light reflection layer 202 is higher than the etching rates of the light absorption layer 204 and the light absorption layer 206. Accordingly, the end of the light reflecting layer 202 is positioned inside the light shielding layer 200 with respect to the ends of the light absorbing layer 204 and the light absorbing layer 206. Thereafter, the mask pattern is removed. According to this method, when viewed from a direction perpendicular to the substrate as shown in FIG. 8, the end portions of the light reflecting layer 202 (first layer) are the light absorbing layer 204 (second layer) and the light absorbing layer 206. It comes to be located inside the light shielding layer 200 from the end of the (third layer).

  Also according to the present embodiment, similarly to the first embodiment, the light emitted from the light emitting region 101 can be prevented from being reflected by the end face of the light reflecting layer 202, and thus the visibility of the light emitting device 10 is improved. .

  In addition, since the light absorption layer 206 is formed on the upper surface of the light reflection layer 202, light incident on the light emitting device 10 from the outside of the light emitting device 10 can be suppressed from being reflected by the light reflecting layer 202. For this reason, the visibility of the light emitting device 10 is further improved.

  Note that as illustrated in FIG. 10, the end of the light absorption layer 206 may be deformed by its own weight and may be positioned on the light absorption layer 204. In this case, at least a part of the end portion of the light reflection layer 202 is covered with the light absorption layer 206. In this case, the light emitted from the light emitting region 101 can be further suppressed from being reflected by the end face of the light reflecting layer 202. In particular, as shown in this figure, when a part of the light absorption layer 206 is positioned on the light absorption layer 204, the entire end portion of the light reflection layer 202 is covered with the light absorption layer 206. It can further suppress that the emitted light is reflected by the end surface of the light reflection layer 202.

  Note that the light absorbing layer 206 may be formed only on the side surface of the light reflecting layer 202 when it is conscious that the light from the light emitting region 101 is suppressed from being reflected by the end face of the light absorbing layer 206.

  FIG. 11 is a cross-sectional view illustrating a configuration of the light emitting device 10 according to the example. The light-emitting device 10 according to the present example has the same configuration as the light-emitting device 10 shown in the second embodiment except for the following points.

  First, the light emitting region 101 is formed of an organic EL element. Specifically, the light emitting region 101 includes a first electrode 110, an organic layer 120, and a second electrode 130. Note that another layer may be formed between the layers.

  The first electrode 110 is formed of a light-transmitting conductive material, for example, an inorganic material such as ITO (Indium Thin Oxide) or IZO (indium zinc oxide), or a conductive polymer such as a polythiophene derivative. The second electrode 130 is made of a material that reflects light, for example, a metal such as an Al electrode.

  The organic layer 120 is formed by stacking, for example, a hole transport layer, a light emitting layer, and an electron transport layer. The hole transport layer is in contact with the first electrode 110, and the electron transport layer is in contact with the second electrode 130. In this way, the organic layer 120 is sandwiched between the first electrode 110 and the second electrode 130. By selecting the material of the organic layer 120, for example, the material of the light emitting layer, the color of light emitted from the light emitting region 101 can be changed to a desired color.

  A hole injection layer may be formed between the first electrode 110 and the hole transport layer, and an electron injection layer may be formed between the second electrode 130 and the electron transport layer. . Also, not all of the above layers are necessary. For example, when recombination of holes and electrons occurs in the electron transport layer, the light transport layer becomes unnecessary because the electron transport layer also functions as the light emitting layer. In addition, at least one of the first electrode 110, the hole injection layer, the hole transport layer, the electron transport layer, the electron injection layer, and the second electrode 130 is formed using a coating method such as an inkjet method. May be. Further, an electron injection layer made of an inorganic material such as LiF may be provided between the organic layer 120 and the second electrode 130.

  When viewed from a direction perpendicular to the substrate 100, the second electrode 130 is also formed between the adjacent light emitting regions 101. That is, the first electrode 110 and the organic layer 120 are patterned for each light emitting region 101, but the second electrode 130 is a common electrode among the plurality of first electrodes 110.

  Note that an insulating layer 102 is formed between adjacent light emitting regions 101. Specifically, the first electrode 110 and the organic layer 120 are formed between the adjacent insulating layers 102. A part of the organic layer 120 may protrude onto the insulating layer 102. The second electrode 130 is continuously formed on the organic layer 120 and the insulating layer 102. The insulating layer 102 is a photosensitive resin such as a polyimide resin, and is formed in a desired pattern by exposure and development. As the insulating layer 102, for example, a positive photosensitive resin is used. The insulating layer 102 may be a resin other than a polyimide resin, for example, an epoxy resin or an acrylic resin.

  The organic layer 120 and the second electrode 130 are formed in this order after the insulating layer 102 is formed.

  A polarizing layer 300 is formed on the surface of the substrate 100 where the light shielding layer 200 is formed. The polarizing layer 300 covers the light shielding layer 200. The polarizing layer 300 is provided in order to prevent external light incident on the light emitting region from being reflected by the second electrode 130 or from being reflected from the upper surface of the light shielding layer 200. That is, the appearance quality of the light emitting device 10 when the light emitting device 10 is not lit can be improved. When the polarizing layer 300 is formed on the light shielding layer 200, the thickness of the light shielding layer 200 is preferably 200 nm or less. This is because when the thickness of the light shielding layer 200 is increased, bubbles or the like are involved when the polarizing layer 300 is attached to the substrate 100, and the appearance quality is deteriorated.

  In addition, a coating film 220 is formed on the surface of the light reflection layer 202 of the light shielding layer 200 opposite to the light absorption layer 204. The coating film 220 is formed of, for example, a resin such as a resist or an inorganic material such as silicon oxide. In the example shown in this drawing, the coating film 220 is formed on the light absorption layer 206. In the manufacturing process of the light emitting device 10 to be described later, after the light shielding layer 200 is formed on the second surface of the substrate 100, the substrate 100 may be transported with the second surface side facing down. In this case, the coating film 220 is provided so that the light shielding layer 200 is not damaged.

  12-14 is a figure for demonstrating the manufacturing method of the light-emitting device 10 in a present Example. First, as shown in FIG. 12A, the first electrode 110 is formed on the surface of the substrate 100 where the light emitting region 101 is formed. At this stage, the first electrode 110 is not patterned. The first electrode 110 is formed using, for example, a vapor deposition method, a sputtering method, or a CVD method.

  Next, as illustrated in FIG. 12B, the light absorption layer 204, the light reflection layer 202, and the light absorption layer 206 are provided on the surface of the substrate 100 opposite to the surface on which the first electrode 110 is formed. They are formed in this order. Next, a coating film 220 is formed on the light absorption layer 206. The coating film 220 is formed using, for example, a coating method.

  Next, as illustrated in FIG. 13A, the light shielding layer 200 and the coating film 220 are patterned to form openings 210. At this time, the end portion of the light reflecting layer 202 is located inside the light reflecting layer 202 with respect to the end portions of the light absorbing layer 204 and the light absorbing layer 206 as described in the second embodiment.

  Next, as shown in FIG. 13B, the first electrode 110 is patterned. This process is performed, for example, by forming a resist pattern on the first electrode 110 and etching the first electrode 110 using the resist pattern as a mask. At this time, since the transport surface is the light shielding layer 200, the light shielding layer 200 is easily damaged. In contrast, in this embodiment, a coating film 220 is provided on the surface of the light shielding layer 200 opposite to the substrate 100. For this reason, it can suppress that the light shielding layer 200 is damaged.

  Next, as shown in FIG. 14A, an insulating layer 102 is formed, and the insulating layer 102 is patterned. When the insulating layer 102 is formed of a photosensitive material, the insulating layer 102 is patterned by exposure and development.

  Next, as shown in FIG. 14B, the organic layer 120 is formed. Each layer constituting the organic layer 120 may be formed using a vapor deposition method, or may be formed using a coating method such as spray coating, dispenser coating, ink jetting, or printing. Further, at least one of the plurality of layers constituting the organic layer 120 may be formed by a method different from the other layers.

  Next, the second electrode 130 is formed on the organic layer 120. The second electrode 130 is formed using, for example, a vapor deposition method, a sputtering method, or a CVD method. Thereafter, the polarizing layer 300 is formed.

  Also according to the present example, the visibility of the light emitting device 10 can be prevented from being lowered, as in the embodiment.

  In this embodiment, the second electrode 130 is also formed in a region located between the light emitting regions 101 when viewed from a direction perpendicular to the substrate 100. For this reason, when the light reflection layer 202 reflects the light from the organic layer 120, the probability that this reflected light will be reflected by the 2nd electrode 130 will become high. In this case, the visibility of the light emitting device 10 is particularly likely to decrease. On the other hand, in this embodiment, a light absorbing layer 204 is formed on the surface of the light reflecting layer 202 facing the substrate 100. Therefore, even if the second electrode 130 is formed between the adjacent light emitting regions 101, it is possible to suppress the visibility of the light emitting device 10 from being lowered.

  In the present example, the configuration of the light shielding layer 200 may be the same as that of the first embodiment.

  As mentioned above, although embodiment and the Example were described with reference to drawings, these are illustrations of this invention and can also employ | adopt various structures other than the above.

Claims (1)

A substrate,
A plurality of light emitting regions provided on the first surface side of the substrate;
A light shielding layer provided on the second surface side of the substrate and positioned between the light emitting regions when viewed from a direction perpendicular to the substrate;
With
The light shielding layer is
The first layer;
A second layer located closer to the substrate than the first layer in the thickness direction;
Have
The second layer has a lower reflectance than the first layer,
The light emitting device, wherein when viewed from a direction perpendicular to the substrate, an end portion of the first layer is located inside the light shielding layer with respect to an end portion of the second layer.

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