KR102075787B1 - Organic light emitting display device and manufacturing method thereof - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic light emitting display device and a method of manufacturing the same. More specifically, the light efficiency and visibility are different by differentiating the red, green, and blue pixel-by-pixel structures. The present invention relates to an improved organic light emitting display device and a method of manufacturing the same.

Description

Organic light-emitting display device and manufacturing method therefor {ORGANIC LIGHT EMITTING DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic light emitting display device and a method of manufacturing the same. More specifically, the light efficiency and visibility are different by differentiating the red, green, and blue pixel-by-pixel structures. The present invention relates to an improved organic light emitting display device and a method of manufacturing the same.

An organic light emitting diode display is a self-luminous display that displays an image with an organic light emitting diode that emits light. Unlike a liquid crystal display, an organic light emitting diode display does not require a separate light source, so that thickness and weight may be relatively reduced. In addition, the organic light emitting diode display has high quality characteristics such as low power consumption, high luminance, and high response speed, and thus, the organic light emitting diode display is attracting attention as a next generation display device of portable electronic devices.

In general, an organic light emitting device includes a hole injection electrode, an organic light emitting layer, and an electron injection electrode. The organic light emitting device generates light by energy generated when the excitons formed by combining holes supplied from the hole injection electrode and electrons supplied from the electron injection electrode in the organic emission layer fall to the ground state. In the case of the organic light emitting device, since its own efficiency is not high, an internal resonant environment is created to improve the efficiency. However, in the internal resonant environment, since the paths of light at the front are different, the efficiency ratio of each of the red, green, and blue is changed, and color difference (WAD) occurs according to the angle at the front and side. In addition, since a substantial part of the light emitted from the organic light emitting layer is lost by waveguide in a direction parallel to the laminated surface by total reflection, the light extraction efficiency is low. The light extraction efficiency refers to the ratio of the amount of light extracted from the device to the observer side with respect to the amount of light emitted from the light emitting layer. The organic light emitting device has a low light extraction efficiency, and thus there is room for improvement in characteristics of the display device such as luminance. many.

As described above, in order to improve the performance of the organic light emitting diode display, various methods for effectively extracting light generated from the organic light emitting layer to improve light efficiency, reduce color difference, and improve visibility are required.

Accordingly, the present invention provides an organic light emitting display device and a method of manufacturing the same, which can improve light efficiency by differentiating a red, green, and blue pixel-by-pixel structure, as well as reducing color difference (WAD) according to an angle. do.

In the present invention to achieve the above object, a substrate; An insulating film disposed on the substrate; A pixel electrode disposed on the insulating film; A pixel definition layer overlapping an end portion of the pixel electrode and formed on the insulating layer, and defining a light emitting area and a non-light emitting area; An organic light emitting layer disposed on the pixel electrode; And a common electrode disposed on the organic light emitting layer, wherein a recess is formed in an insulating layer disposed around the at least one pixel electrode, and the recess includes a bottom portion and an inclined portion. An organic light emitting display device having a reflective surface formed therein is provided.

In example embodiments, the pixel electrode may include a red (R) pixel electrode, a green (G) pixel electrode, and a blue (B) pixel electrode.

According to another example of the present invention, the pixel electrode may further include a white (W) pixel electrode.

In example embodiments, the common electrode may extend on the pixel defining layer and the insulating layer.

According to an example of the present invention, a reflective surface may be formed on the inclined portion formed in the recesses around the red pixel electrode and the green pixel electrode.

According to an example of the present invention, the reflective surface may be separated from the common electrode.

According to another example of the invention, the reflective surface may be formed by a common electrode extending to the inclined portion of the recess.

According to an example of the present invention, a separate reflective surface separated from the common electrode may be formed in the non-emission region of the blue pixel electrode.

According to an example of the present invention, the reflective surface may include at least one selected from the group consisting of Al, Ti, Mg, and Ag.

According to one embodiment of the present invention, the insulating film includes a first insulating film and a second insulating film disposed on the first insulating film, wherein the recessed portion, the bottom portion is formed in the first insulating film and the inclined portion is a second insulating film Can be formed on.

In addition, the present invention also provides a method of manufacturing the organic light emitting display device.

A method of manufacturing an organic light emitting diode display according to the present invention includes forming an insulating film on a substrate; Forming a pixel electrode on the insulating film; Forming a pixel definition layer between the pixel electrodes so as to overlap an end portion of the pixel electrode; Forming an organic light emitting layer on the pixel electrode; And forming a common electrode on the organic light emitting layer.

Here, a recess is formed in the insulating layer disposed in the non-light emitting region around the at least one pixel electrode, the recess includes a bottom portion and an inclined portion, and a reflective surface is formed on the inclined portion.

According to an example of the present invention, the forming of the pixel electrode may include forming a red pixel electrode, a green pixel electrode, and a blue pixel electrode.

In example embodiments, the forming of the pixel electrode may further include forming a white pixel electrode.

In example embodiments, the forming of the common electrode may include forming the common electrode on the pixel definition layer and the insulating layer.

According to the exemplary embodiment of the present invention, the reflective surface is formed on the inclined portion formed around the red pixel electrode and the green pixel electrode.

According to an example of the present invention, the reflective surface is formed to be separated from the common electrode.

According to another example of the invention, the reflective surface is formed by a common electrode extending to the inclined portion of the recess.

According to the exemplary embodiment of the present invention, a separate reflective surface separated from the common electrode is formed in the non-emission region of the blue pixel electrode.

According to an example of the present invention, the reflective surface may include at least one selected from the group consisting of Al, Ti, Mg, and Ag.

According to an example of the present invention, the forming of the insulating film may include forming a first insulating film forming a bottom portion; And forming a second insulating film having an inclined portion.

In the organic light emitting diode display according to the present invention, the red pixel portion and the green pixel portion are formed in a structure having excellent efficiency and front luminance, and the blue pixel portion is differentially formed in a structure having excellent efficiency and side luminance, thereby further increasing light efficiency and generating color difference. The visibility can be improved by reducing the

1 is a cross-sectional view schematically illustrating a structure of a red pixel unit and a green pixel unit of an organic light emitting diode display according to an exemplary embodiment of the present invention.
2 is a cross-sectional view schematically illustrating a structure of a blue pixel unit of an organic light emitting diode display according to an exemplary embodiment of the present invention.
3 is a schematic cross-sectional view illustrating a structure of a red pixel unit and a green pixel unit of an organic light emitting diode display according to another exemplary embodiment.
4 is a schematic cross-sectional view illustrating a structure of a blue pixel unit of an organic light emitting diode display according to another exemplary embodiment of the present invention.
5 is a schematic cross-sectional view illustrating a structure of a red pixel unit and a green pixel unit of an organic light emitting diode display according to another exemplary embodiment.
6 is a schematic cross-sectional view illustrating a structure of a blue pixel unit of an organic light emitting diode display according to another exemplary embodiment of the present invention.

Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

The present invention can be variously modified and can be embodied in various forms. Only specific embodiments are illustrated in the drawings and described in the text. However, the scope of the present invention is not limited to the above specific embodiments, and it should be understood that all changes, equivalents, or substitutes included in the spirit and technical scope of the present invention are included in the scope of the present invention.

In the present specification, specific structural to functional descriptions are merely illustrated for the purpose of describing embodiments of the present invention, and the embodiments of the present invention may be embodied in various forms and are limited to the embodiments described herein. It is not to be understood that the present invention is to be construed as including all modifications, equivalents, and substitutes included in the spirit and technical scope of the present invention. When a component is said to be "connected" or "contacted" to another component, it may be directly connected to or in contact with another component, but it should be understood that there may be another component in between. something to do. In addition, when a component is described as "directly connected" or "directly contacted" to another component, it may be understood that there is no other component in between. Other expressions describing the relationship between the components, such as "between" and "directly between" or "adjacent to" and "directly adjacent to", may be interpreted as well.

The terminology used herein is for the purpose of describing exemplary embodiments only and is not intended to be limiting of the invention. Singular expressions include plural expressions unless the context clearly indicates otherwise. As used herein, the terms "comprise", "comprise" or "have" are intended to designate that there is a feature, number, step, action, component, part, or combination thereof that is practiced, and that one or the same. It is to be understood that the present invention does not exclude in advance the possibility of the presence or the addition of other features, numbers, steps, operations, components, parts, or a combination thereof. Unless defined otherwise, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art. Terms such as those defined in the commonly used dictionaries should be construed as having meanings consistent with the meanings in the context of the related art, and shall not be construed in ideal or excessively formal meanings unless expressly defined in this application. Does not.

Terms such as first, second, third, etc. may be used to describe various components, but these components are not limited by the terms. The terms are used to distinguish one component from other components. For example, without departing from the scope of the present invention, the first component may be referred to as the second or third component, and similarly, the second or third component may be alternatively named.

In order to clearly describe the present invention, parts irrelevant to the description are omitted, and like reference numerals designate like elements throughout the specification. In addition, since the size and thickness of each structure shown in the drawings are arbitrarily shown for convenience of description, the present invention is not necessarily limited to those disclosed in the drawings.

In the drawings, the thickness of layers, films, panels, regions, etc., are exaggerated for clarity. In the drawings, the thicknesses of some layers and regions are exaggerated for convenience of explanation.

1 and 2 are cross-sectional views schematically illustrating a pixel-by-pixel structure of an organic light emitting diode display according to an exemplary embodiment of the present invention.

Specifically, in the organic light emitting diode display according to an exemplary embodiment of the present invention, the red pixel portion and the green pixel portion are as shown in FIG. 1, and the blue pixel portion is as shown in FIG. 2.

First, a structure of the red pixel unit and the green pixel unit of the organic light emitting diode display according to the exemplary embodiment of the present invention will be described with reference to FIG. 1.

The organic light emitting diode display according to the exemplary embodiment of the present invention basically includes a substrate 1100; An insulating film 1200 disposed on the substrate; A pixel electrode 1300 disposed on the insulating film; A pixel defining layer 1400 overlapping an end portion of the pixel electrode and formed on the insulating layer, and defining a light emitting area and a non-light emitting area; An organic light emitting layer 1500 disposed on the pixel electrode; And a common electrode 1600 disposed on the organic light emitting layer.

First, a transparent insulating substrate may be used as the substrate 1100. For example, the substrate 1100 may be formed of a glass substrate, a quartz substrate, a transparent resin substrate, or the like. The transparent resin substrate that may be used as the substrate 1100 may include a polyimide resin, an acrylic resin, a polyacrylate resin, a polycarbonate resin, a polyether resin, a polyethylene terephthalate resin, a sulfonic acid resin, or the like. These may be used alone or in combination with each other.

Although not shown in the drawings, a semiconductor device may be formed on the substrate 1100. One example of the semiconductor device is a thin film transistor (TFT) including a gate electrode, a source electrode and a drain electrode. In an example of the present invention, a case in which the pixel electrode is an anode is illustrated, and the pixel electrode 1300, which is the anode, may be electrically connected to a drain electrode of the thin film transistor TFT. The semiconductor device may be formed by a conventional method of forming a thin film transistor. Therefore, a description of a specific method of forming a semiconductor device or a thin film transistor is omitted.

Meanwhile, a lower structure including a switching element, a contact, a pad, a plug, an electrode, a conductive pattern, an insulating pattern, and the like may be provided on the substrate. In this case, the lower structure may be disposed at a position not overlapping with the main emission region on the pixel electrode.

According to one example of the present invention, a TFT can be formed on a substrate as a semiconductor element. A gate electrode is formed on the substrate 1100, and a gate insulating film for insulating the gate electrode is formed. Source and drain electrodes are formed on the gate insulating layer. The gate electrode, the drain electrode, and the source electrode are elements constituting the TFT, and these may be referred to as semiconductor elements.

After the source electrode and the drain electrode are formed, an insulating film 1200 is formed over the entire substrate. The insulating film 1200 has a thickness sufficient to cover the lower structures formed on the substrate.

The insulating film 1200 may be formed in a single structure, but may be formed in a multi-layered structure including at least two or more insulating films.

As shown in FIG. 1, the insulating film 1200 may include a first insulating film 1210 and a second insulating film 1220 sequentially formed on the substrate 1100. In this case, the first insulating film 1210 and the second insulating film 1220 may be formed using substantially the same or similar materials. Of course, the first insulating film 1210 and the second insulating film 1220 may be formed using different materials.

The insulating film 1200 has a concave portion. The concave portion has a concave bottom surface portion and an inclined portion that is an inclined side portion. Specifically, the recess is formed by the first insulating film 1210 and the second insulating film 1220. In this case, the first insulating film 1210 forms a bottom portion, and the side surface portion of the second insulating film 1220 forms an inclined portion.

According to an example of the present invention, in order to improve the flatness of the insulating film 1200 formed on the substrate, a planarization process may be performed on the substrate. For example, the substrate may have a flat top surface by applying a chemical mechanical polishing (CMP) process, an etch-back process, or the like to the substrate.

According to an embodiment of the present invention, the insulating film 1200 may include an organic material. For example, the insulating film 1200 may include a material selected from a photoresist, an acrylic polymer, a polyimide polymer, a polyamide polymer, a siloxane polymer, a polymer including a photosensitive acrylic carboxyl group, a novolak resin, and an alkali-soluble resin. Can be. These may be used alone or in combination with each other.

According to another embodiment of the present invention, the insulating film 1200 may be formed using an inorganic material such as a silicon compound, a metal, a metal oxide, or the like. For example, the insulating film 1200 may include silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy), silicon oxycarbide (SiOxCy), silicon carbonitride (SiCxNy), aluminum (Al), magnesium (Mg). ), Zinc (Zn), hafnium (Hf), zirconium (Zr), titanium (Ti), tantalum (Ta), aluminum oxide (AlOx), titanium oxide (TiOx), tantalum oxide (TaOx), magnesium oxide (MgOx) It may include a material selected from zinc oxide (ZnOx), hafnium oxide (HfOx), zirconium oxide (ZrOx), and titanium oxide (TiOx). These may be used alone or in combination with each other.

The insulating film 1200 may include a spin coating process, a printing process, a sputtering process, a chemical vapor deposition (CVD) process, an atomic layer deposition (ALD) process, a plasma enhanced chemical vapor deposition (PECVD) process, and a high density plasma-chemistry depending on the constituent materials. It may be formed on the substrate using a vapor deposition (HDP-CVD) process, a vacuum deposition process and the like.

The pixel electrode 1300 is formed on the insulating layer 1200. The pixel electrode 1300 may be electrically connected to the drain electrode of the thin film transistor.

According to an embodiment of the present invention, the pixel electrode 1300 may include a red (R) pixel electrode, a green (G) pixel electrode, and a blue (B) pixel electrode, and may be formed using a light transmissive conductive material. have. For example, the pixel electrode 1300 may include at least one of an indium tin compound, an indium zinc oxide, zinc tin oxide, zinc oxide, tin oxide, and gallium oxide. These may be used alone or in combination with each other.

According to an embodiment of the present invention, the pixel electrode material may be formed on a portion of the insulating film 1200 by coating the pixel electrode material on the entire surface of the insulating film 1200 and then patterning the pixel electrode material. have. Here, the pixel electrode may be formed by a method such as a sputtering process, a vacuum deposition process, a chemical vapor deposition process, a pulsed laser deposition process, a printing process, an atomic layer deposition process and the like using the pixel electrode material.

The insulating layer 1200 may form a through hole that penetrates the insulating layer 1200 and leads to a semiconductor device, that is, a TFT. A portion of the semiconductor device is exposed by the through hole, and a contact structure or a pad structure is formed on the inside of the through hole and the exposed semiconductor device, for example, a thin film transistor (TFT), and on the insulating film 1200. The pixel electrode 1300 formed may be connected to the contact structure or the pad structure. Accordingly, the pixel electrode 1300 may be electrically connected to the semiconductor device through the contact structure or the pad structure.

Next, the pixel defining layer 1400 is formed on the insulating layer 1200 and the pixel electrode 1300. The pixel definition layer 1400 may be formed using an organic material, an inorganic material, or the like. For example, the pixel definition layer 1400 may include a material selected from an organic material such as a photoresist, a polyacrylic resin, a polyimide resin, an acrylic resin, or an inorganic material such as a silicon compound.

The pixel defining layer forming material is applied to the entire upper portion of the pixel electrode 1300 and the insulating layer 1200, and then partially etched to form a pixel defining layer 1400 to expose a portion of the pixel electrode 1300. . For example, an opening for exposing the pixel electrode 1300 is formed by using a photolithography process or an etching process using an additional etching mask. In this case, the sidewalls of the opening of the pixel defining layer 1400 may have an inclination angle that is substantially the same as or substantially similar to that of the inclination portion.

According to an embodiment of the present invention, as shown in FIG. 1, the pixel defining layer 1400 may include a first insulating layer to expose recesses formed by the first insulating layer 1210 and the second insulating layer 1220. 1210 may be formed by etching to the upper surface.

As openings are formed in the pixel definition layer 1400, light emitting regions and non-light emitting regions of the organic light emitting diode display are defined. Here, an area in which the opening of the pixel defining layer 1400 is located corresponds to the light emitting area, and an area adjacent to the opening corresponds to the non-light emitting area.

After the pixel definition layer 1400 is formed as described above, the organic light emitting layer 1500 is formed on the pixel definition layer 1400 and the pixel electrode 1300.

The organic light emitting layer 1500 may be formed using light emitting materials capable of generating different color lights such as red light, green light, and blue light according to each pixel of the organic light emitting diode display. According to another example, the organic light emitting layer 1500 may have a multilayer structure in which a plurality of light emitting materials capable of realizing different color lights such as red light, green light, and blue light are stacked to emit white light. According to another example, the organic light emitting layer 1500 may further include a host material having a band gap substantially larger than that of the light emitting materials.

According to the exemplary embodiment of the present invention, the organic light emitting layer 1500 is positioned on the pixel electrode 1300. In addition, the organic light emitting layer 1500 extends from the pixel electrode 1300 in the emission region and is also formed on the pixel definition layer 1400 and the insulating layer 1200. That is, as shown in FIG. 1, the bottom of the organic light emitting layer 1500 is positioned on the pixel electrode 1300, and the side of the organic light emitting layer 1500 is in contact with the pixel defining layer 1400 and the insulating film 1200.

According to the exemplary embodiment of the present invention, a first emission auxiliary layer may be formed between the pixel electrode 1300 and the organic light emitting layer 1500. In this case, the first emission auxiliary layer may include at least one of a hole injection layer and a hole transport layer. In addition, a second emission auxiliary layer may be formed between the organic light emitting layer 1500 and the common electrode 1600. In this case, the second emission auxiliary layer may include at least one of an electron injection layer and an electron transport layer.

Next, the common electrode 1600 is formed on the organic light emitting layer 1500. The common electrode 1600 may be formed to have a uniform thickness on the organic light emitting layer 1500. The common electrode 1600 may be formed using a reflective material. For example, the common electrode 1600 may be a material selected from a metal such as aluminum, silver, platinum, gold (Au), chromium, tungsten, molybdenum, titanium, palladium (Pd), iridium (Ir), and alloys thereof. It may include. These may be used alone or in combination with each other.

According to an embodiment of the present invention, the common electrode 1600 may be formed over the entire surface of the organic light emitting layer 1500. That is, the common electrode 1600 may be formed to extend on the pixel defining layer 1400 and the insulating layer 1200.

According to another example, the common electrode 1600 may be located only in the emission area. For example, the common electrode 1600 may be disposed on a portion of the organic light emitting layer 1500. In this case, after forming a common electrode layer (not shown) over the entire surface of the organic light emitting layer 1500, the common electrode layer may be patterned so that the common electrode 1600 may be selectively disposed only in the emission region.

According to an embodiment of the present invention, as can be seen in Figure 1, the common electrode 1600 formed extending to the inclined portion of the insulating film 1200 acts as a reflective surface, the light to be extinguished due to total internal reflection in the common By reflecting to the electrode 1600 to be emitted toward the substrate, it is possible to improve the light extraction efficiency to the front surface.

Next, referring to FIG. 2, the structure of the blue pixel unit of the organic light emitting diode display according to the exemplary embodiment will be described.

In the blue pixel portion, other components except the pixel defining layer 1400, that is, the substrate 1100, the insulating layer 1200, the pixel electrode 1300, the organic light emitting layer 1500, and the common electrode 1600 may be illustrated. The red pixel unit and the green pixel unit described with reference to FIG. 1 may be the same as or substantially similar to each other.

As illustrated in FIG. 2, the blue pixel portion of the organic light emitting diode display according to the exemplary embodiment of the present invention may include an insulating film formed by the first insulating film 1210 and the second insulating film 1220 when the pixel definition film 1400 is formed. Etching is performed such that the recess of the 1200 is not exposed, thereby minimizing the thickness reduction of the common electrode 1600 due to severe inclination. Therefore, compared to the conventional organic light emitting diode display, the current uniformity defect due to the increased resistance of the common electrode can be minimized.

3 and 4 are cross-sectional views schematically illustrating a pixel structure of an organic light emitting diode display according to another exemplary embodiment of the present invention.

Specifically, in the organic light emitting diode display according to another exemplary embodiment of the present invention, the structure of the red pixel unit and the green pixel unit is as shown in FIG. 3, and the structure of the blue pixel unit is as shown in FIG. 4.

First, referring to FIG. 3, a structure of a red pixel unit and a green pixel unit of an organic light emitting diode display according to another example embodiment will be described.

In another exemplary embodiment, an organic light emitting diode display includes a substrate 2100; An insulating film 2200 disposed on the substrate; A pixel electrode 2300 disposed on the insulating film; A pixel defining layer 2400 overlapping an end portion of the pixel electrode and formed on the insulating layer to define a light emitting area and a non-light emitting area; An organic light emitting layer 2500 disposed on the pixel electrode; And a common electrode 2600 disposed on the organic light emitting layer.

First, a transparent insulating substrate may be used as the substrate 2100. For example, the substrate 2100 may be formed of a glass substrate, a quartz substrate, a transparent resin substrate, or the like. The transparent resin substrate that may be used as the substrate 2100 may include polyimide resin, acrylic resin, polyacrylate resin, polycarbonate resin, polyether resin, polyethylene terephthalate resin, sulfonic acid resin, and the like. These may be used alone or in combination with each other.

Although not shown in the drawings, a semiconductor device may be formed on the substrate 2100. One example of the semiconductor device is a thin film transistor (TFT) including a gate electrode, a source electrode and a drain electrode. In an example of the present invention, the pixel electrode is an anode, and the pixel electrode 2300, which is the anode, may be electrically connected to a drain electrode of the thin film transistor TFT. The semiconductor device may be formed by a conventional method of forming a thin film transistor. Therefore, a description of a specific method of forming a semiconductor device or a thin film transistor is omitted.

Meanwhile, a lower structure including a switching element, a contact, a pad, a plug, an electrode, a conductive pattern, an insulating pattern, and the like may be provided on the substrate. In this case, the lower structure may be disposed at a position not overlapping with the main emission region on the pixel electrode.

According to one example of the present invention, a TFT can be formed on a substrate as a semiconductor element. A gate electrode is formed on the substrate 2100, and a gate insulating film for insulating the gate electrode is formed. Source and drain electrodes are formed on the gate insulating layer. The gate electrode, the drain electrode, and the source electrode are elements constituting the TFT, and these may be referred to as semiconductor elements.

After the source electrode and the drain electrode are formed, an insulating film 2200 is formed over the entire substrate. The insulating film 2200 has a thickness sufficient to cover the lower structures formed on the substrate.

Meanwhile, the insulating film 2200 may be formed in a single structure, but may be formed in a multilayer structure including at least two insulating films.

As shown in FIG. 3, the insulating film 2200 may include a first insulating film 2210 and a second insulating film 2220 sequentially formed on the substrate 2100. In this case, the first insulating film 2210 and the second insulating film 2220 may be formed using substantially the same or similar materials. The first insulating film 2210 and the second insulating film 2220 may be formed using different materials.

The insulating film 2200 has a recess. The concave portion has a concave bottom surface portion and an inclined portion that is an inclined side portion. Specifically, a recess is formed by the first insulating film 2210 and the second insulating film 2220. In this case, the first insulating film 2210 forms a bottom portion, and the side surface portion of the second insulating film 2220 forms an inclined portion.

According to an example of the present invention, in order to improve the flatness of the insulating film 2200 formed on the substrate, a planarization process may be performed on the substrate. For example, the substrate may have a flat top surface by applying a chemical mechanical polishing (CMP) process, an etch-back process, or the like to the substrate.

According to an embodiment of the present invention, the insulating film 2200 may include an organic material. For example, the insulating film 2200 may include a material selected from a photoresist, an acrylic polymer, a polyimide polymer, a polyamide polymer, a siloxane polymer, a polymer including a photosensitive acrylic carboxyl group, a novolak resin, and an alkali-soluble resin. Can be. These may be used alone or in combination with each other.

According to another embodiment of the present invention, the insulating film 2200 may be formed using an inorganic material such as a silicon compound, a metal, a metal oxide, or the like. For example, the insulating film 2200 may include silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy), silicon oxycarbide (SiOxCy), silicon carbonitride (SiCxNy), aluminum (Al), magnesium (Mg). ), Zinc (Zn), hafnium (Hf), zirconium (Zr), titanium (Ti), tantalum (Ta), aluminum oxide (AlOx), titanium oxide (TiOx), tantalum oxide (TaOx), magnesium oxide (MgOx) It may include a material selected from zinc oxide (ZnOx), hafnium oxide (HfOx), zirconium oxide (ZrOx), and titanium oxide (TiOx). These may be used alone or in combination with each other.

The insulating film 2200 may be formed of a spin coating process, a printing process, a sputtering process, a chemical vapor deposition (CVD) process, an atomic layer deposition (ALD) process, a plasma enhanced chemical vapor deposition (PECVD) process, and a high density plasma-chemical process, depending on the constituent materials. It may be formed on the substrate using a vapor deposition (HDP-CVD) process, a vacuum deposition process and the like.

The pixel electrode 2300 is formed on the insulating film 2200. The pixel electrode 2300 may be electrically connected to the drain electrode of the thin film transistor.

According to an embodiment of the present invention, the pixel electrode 2300 may include a red (R) pixel electrode, a green (G) pixel electrode, and a blue (B) pixel electrode, and may be formed using a light transmissive conductive material. have. For example, the pixel electrode 2300 may include at least one of an indium tin compound, an indium zinc oxide, a zinc tin oxide, a zinc oxide, a tin oxide, and a gallium oxide. These may be used alone or in combination with each other.

According to an embodiment of the present invention, the pixel electrode material may be formed on a portion of the insulating film 2200 by coating the pixel electrode material on the entire surface of the insulating film 2200 and then patterning the pixel electrode material. have. Here, the pixel electrode may be formed by a method such as a sputtering process, a vacuum deposition process, a chemical vapor deposition process, a pulsed laser deposition process, a printing process, an atomic layer deposition process and the like using the pixel electrode material.

The insulating layer 2200 may form a through hole that penetrates the insulating layer 2200 and leads to a semiconductor device, that is, a TFT. A portion of the semiconductor device is exposed by the through hole, and a contact structure or a pad structure is formed on the inside of the through hole and the exposed semiconductor device, for example, a thin film transistor (TFT), and on the insulating film 2200. The formed pixel electrode 2300 may be connected to the contact structure or the pad structure. Accordingly, the pixel electrode 2300 may be electrically connected to the semiconductor device through the contact structure or the pad structure.

Next, a pixel defining layer 2400 is formed on the insulating layer 2200 and the pixel electrode 2300. The pixel definition layer 2400 may be formed using an organic material, an inorganic material, or the like. For example, the pixel definition layer 2400 may include a material selected from an organic material such as a photoresist, a polyacrylic resin, a polyimide resin, an acrylic resin, or an inorganic material such as a silicon compound.

The pixel defining layer forming material is applied to the entire upper portion of the pixel electrode 2300 and the insulating film 2200, and then partially etched to form a pixel defining layer 2400 to expose a portion of the pixel electrode 2300. . For example, an opening for exposing the pixel electrode 2300 is formed by using a photolithography process or an etching process using an additional etching mask. In this case, the sidewall of the opening of the pixel defining layer 2400 may have an inclination angle that is substantially the same as or substantially similar to that of the inclination portion.

According to an embodiment of the present invention, as shown in FIG. 3, the pixel defining layer 2400 may include a first insulating layer to expose the recess formed by the first insulating layer 2210 and the second insulating layer 2220. It may be formed by etching to the upper surface (2210).

As openings are formed in the pixel definition layer 2400, light emitting regions and non-light emitting regions of the organic light emitting diode display are defined. Here, an area in which the opening of the pixel defining layer 2400 is located corresponds to the light emitting area, and an area adjacent to the opening corresponds to the non-light emitting area.

After the pixel definition layer 2400 is formed as described above, the organic light emitting layer 2500 is formed on the pixel definition layer 2400 and the pixel electrode 2300.

The organic light emitting layer 2500 may be formed using light emitting materials capable of generating different color lights such as red light, green light, and blue light according to each pixel of the organic light emitting diode display. According to another example, the organic light emitting layer 2500 may have a multilayer structure in which a plurality of light emitting materials capable of realizing different color lights such as red light, green light, and blue light are stacked to emit white light. According to another example, the organic light emitting layer 2500 may further include a host material having a band gap substantially larger than that of the light emitting materials.

According to the exemplary embodiment of the present invention, the organic light emitting layer 2500 is positioned on the pixel electrode 2300. In addition, the organic light emitting layer 2500 extends from the pixel electrode 2300 in the emission region to be formed on the pixel defining layer 2400 and the insulating layer 2200. That is, as shown in FIG. 3, the bottom of the organic light emitting layer 2500 is positioned on the pixel electrode 2300, and the side of the organic light emitting layer 2500 contacts the pixel defining layer 2400 and the insulating film 2200.

In example embodiments, a first emission auxiliary layer may be formed between the pixel electrode 2300 and the organic light emitting layer 2500. In this case, the first emission auxiliary layer may include at least one of a hole injection layer and a hole transport layer. In addition, a second emission auxiliary layer may be formed between the organic light emitting layer 2500 and the common electrode 2600. In this case, the second emission auxiliary layer may include at least one of an electron injection layer and an electron transport layer.

Next, the common electrode 2600 is formed on the organic light emitting layer 2500. The common electrode 2600 may be formed to have a uniform thickness on the organic light emitting layer 2500. The common electrode 2600 may be formed using a reflective material. For example, the common electrode 2600 is a material selected from metals such as aluminum, silver, platinum, gold (Au), chromium, tungsten, molybdenum, titanium, palladium (Pd), iridium (Ir), and alloys thereof. It may include. These may be used alone or in combination with each other.

According to an embodiment of the present invention, the common electrode 2600 may be formed over the entire surface of the organic light emitting layer 2500. That is, the common electrode 2600 may be formed to extend on the pixel defining layer 2400 and the insulating layer 2200.

According to another example, the common electrode 2600 may be located only in the emission area. For example, the common electrode 2600 may be disposed on a portion of the organic light emitting layer 2500. In this case, after forming a common electrode layer (not shown) over the entire surface of the organic light emitting layer 2500, the common electrode layer may be patterned so that the common electrode 2600 may be selectively disposed only in the emission region.

According to one embodiment of the present invention, as can be seen in Figure 3, the common electrode (2600) extending to the inclined portion of the insulating film 2200 acts as a reflecting surface, the light to be extinguished due to total internal reflection inside By reflecting the electrode 2600 to be emitted toward the substrate, light extraction efficiency toward the front surface can be improved.

4 is a cross-sectional view illustrating a structure of a blue pixel unit of an organic light emitting diode display according to another exemplary embodiment of the present invention.

In the blue pixel unit, except that a separate reflective surface 2700 and a spacer 2410 are disposed on the pixel defining layer 2400, the structure of the red pixel unit and the green pixel unit described with reference to FIG. It may be the same or substantially similar.

As shown in FIG. 4, in the blue pixel unit according to another exemplary embodiment, a separate reflective surface 2700 is formed on the side of the pixel definition layer 2400 corresponding to the inclined portion of the insulating layer 2200. do.

As the material for forming the reflective surface 2700, a material having a high reflectance is used even if the conductivity is small, so that the material selection range is wide. For example, the reflective surface 2700 may include at least one selected from the group consisting of Al, Ti, Mg, and Ag.

A spacer 2410 is formed on the reflective surface 2700. The spacer 2410 may be formed to extend over the pixel definition layer 2400 to cover the reflective surface 2700.

In detail, the reflective surface 2700 is buried between the pixel defining layer 2400 and the spacer 2410. In FIG. 4, the reflective surface 2700 is illustrated to surround the pixel defining layer 2400, but may be formed in any shape that can reflect light from the side surface.

Next, an organic light emitting layer 2500 is formed on the exposed pixel electrode 2300 and the spacer 2410.

According to an embodiment of the present invention, the organic light emitting layer 2500 is positioned on the pixel electrode 2300. In addition, the organic light emitting layer 2500 extends from the pixel electrode 2300 in the emission region to be formed on the pixel defining layer 2400 and the spacer 2500. That is, as shown in FIG. 4, the bottom of the organic light emitting layer 2500 is positioned on the pixel electrode 2300, and the side portion of the organic light emitting layer 2500 is in contact with the pixel defining layer 2400 and the spacer 2410.

The reflection surface 2700 is further formed on the pixel definition layer 2400 corresponding to the inclined portion of the insulating layer 2200 to prevent total reflection of light generated therein, thereby reflecting light in the conventional organic light emitting display device. It is possible to minimize the thickness reduction of the common electrode 2600 caused by the formation of the inclined portion. Therefore, the organic light emitting diode display according to the present invention can minimize the current uniformity defect due to the increase in resistance of the common electrode as compared to the conventional organic light emitting diode display.

5 and 6 are cross-sectional views schematically illustrating pixel structures of an organic light emitting diode display according to another exemplary embodiment of the present invention.

Specifically, in the organic light emitting diode display according to still another embodiment of the present invention, the structure of the red pixel unit and the green pixel unit is as shown in FIG. 5, and the structure of the blue pixel unit is as shown in FIG. 6.

First, referring to FIG. 5, a structure of a red pixel unit and a green pixel unit of an organic light emitting diode display according to another exemplary embodiment will be described.

According to another exemplary embodiment, an organic light emitting diode display includes a substrate 3100; An insulating film 3200 disposed on the substrate; A pixel electrode 3300 disposed on the insulating film; A pixel defining layer 3400 overlapping an end portion of the pixel electrode and formed on the insulating layer, and defining a light emitting area and a non-light emitting area; An organic light emitting layer 3500 disposed on the pixel electrode; And a common electrode 3600 disposed on the organic light emitting layer.

First, a transparent insulating substrate may be used as the substrate 3100. For example, the substrate 3100 may be formed of a glass substrate, a quartz substrate, a transparent resin substrate, or the like. The transparent resin substrate that may be used as the substrate 3100 may include polyimide resin, acrylic resin, polyacrylate resin, polycarbonate resin, polyether resin, polyethylene terephthalate resin, sulfonic acid resin, and the like. These may be used alone or in combination with each other.

Although not shown in the drawings, a semiconductor device may be formed on the substrate 3100. One example of the semiconductor device is a thin film transistor (TFT) including a gate electrode, a source electrode and a drain electrode. In an example of the present invention, the pixel electrode is an anode, and the pixel electrode 3300, which is the anode, may be electrically connected to the drain electrode of the thin film transistor TFT. The semiconductor device may be formed by a conventional method of forming a thin film transistor. Therefore, a description of a specific method of forming a semiconductor device or a thin film transistor is omitted.

Meanwhile, a lower structure including a switching element, a contact, a pad, a plug, an electrode, a conductive pattern, an insulating pattern, and the like may be provided on the substrate. In this case, the lower structure may be disposed at a position not overlapping with the main emission region on the pixel electrode.

According to one example of the present invention, a TFT can be formed on a substrate as a semiconductor element. A gate electrode is formed on the substrate 3100, and a gate insulating film for insulating the gate electrode is formed. Source and drain electrodes are formed on the gate insulating layer. The gate electrode, the drain electrode, and the source electrode are elements constituting the TFT, and these may be referred to as semiconductor elements.

After the source electrode and the drain electrode are formed, an insulating film 3200 is formed over the entire surface of the substrate. The insulating film 3200 has a thickness sufficient to cover the lower structures formed on the substrate.

The insulating film 3200 may be formed in a single structure, but may be formed in a multilayer structure including at least two insulating films.

As shown in FIG. 5, the insulating film 3200 may include a first insulating film 3210 and a second insulating film 3220 sequentially formed on the substrate 3100. In this case, the first insulating film 3210 and the second insulating film 3220 may be formed using substantially the same or similar materials. The first insulating film 3210 and the second insulating film 3220 may be formed using different materials.

The insulating film 3200 has a recess. The concave portion has a concave bottom surface portion and an inclined portion that is an inclined side portion. Specifically, the recess is formed by the first insulating film 3210 and the second insulating film 3220. In this case, the first insulating film 3210 forms a bottom portion, and the side surface portion of the second insulating film 3220 forms an inclined portion.

According to an example of the present invention, in order to improve the flatness of the insulating film 3200 formed on the substrate, a planarization process may be performed on the substrate. For example, the substrate may have a flat top surface by applying a chemical mechanical polishing (CMP) process, an etch-back process, or the like to the substrate.

According to an embodiment of the present invention, the insulating film 3200 may include an organic material. For example, the insulating film 3200 may include a material selected from a photoresist, an acrylic polymer, a polyimide polymer, a polyamide polymer, a siloxane polymer, a polymer including a photosensitive acrylic carboxyl group, a novolak resin, and an alkali soluble resin. Can be. These may be used alone or in combination with each other.

According to another embodiment of the present invention, the insulating film 3200 may be formed using an inorganic material such as a silicon compound, a metal, a metal oxide, or the like. For example, the insulating film 3200 may include silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy), silicon oxycarbide (SiOxCy), silicon carbonitride (SiCxNy), aluminum (Al), magnesium (Mg). ), Zinc (Zn), hafnium (Hf), zirconium (Zr), titanium (Ti), tantalum (Ta), aluminum oxide (AlOx), titanium oxide (TiOx), tantalum oxide (TaOx), magnesium oxide (MgOx) It may include a material selected from zinc oxide (ZnOx), hafnium oxide (HfOx), zirconium oxide (ZrOx), and titanium oxide (TiOx). These may be used alone or in combination with each other.

The insulating film 3200 may be formed by spin coating, printing, sputtering, chemical vapor deposition (CVD), atomic layer deposition (ALD), plasma enhanced chemical vapor deposition (PECVD), and high density plasma It may be formed on the substrate using a vapor deposition (HDP-CVD) process, a vacuum deposition process and the like.

The pixel electrode 3300 is formed on the insulating layer 3200. The pixel electrode 3300 may be electrically connected to the drain electrode of the thin film transistor.

According to an embodiment of the present invention, the pixel electrode 3300 includes a red (R) pixel electrode, a green (G) pixel electrode, and a blue (B) pixel electrode, and may be formed using a light transmissive conductive material. have. For example, the pixel electrode 3300 may include at least one of an indium tin compound, an indium zinc oxide, zinc tin oxide, zinc oxide, tin oxide, and gallium oxide. These may be used alone or in combination with each other.

According to an exemplary embodiment of the present invention, the pixel electrode material 3300 may be formed on a portion of the insulating film 3200 by coating a pixel electrode material on the entire surface of the insulating film 3200 and then patterning the pixel electrode material. have. Here, the pixel electrode may be formed by a method such as a sputtering process, a vacuum deposition process, a chemical vapor deposition process, a pulsed laser deposition process, a printing process, an atomic layer deposition process and the like using the pixel electrode material.

The insulating layer 3200 may form a through hole that penetrates the insulating layer 3200 and leads to a semiconductor device, that is, a TFT. A portion of the semiconductor device is exposed by the through hole, and a contact structure or a pad structure is formed on the inside of the through hole and the exposed semiconductor device, for example, a thin film transistor (TFT), and on the insulating film 3200. The formed pixel electrode 3300 may be connected to the contact structure or the pad structure. Accordingly, the pixel electrode 3300 may be electrically connected to the semiconductor device through the contact structure or the pad structure.

Next, the pixel defining layer 3400 is formed on the insulating layer 3200 and the pixel electrode 3300. The pixel definition layer 3400 may be formed using an organic material, an inorganic material, or the like. For example, the pixel definition layer 3400 may include a material selected from an organic material such as a photoresist, a polyacrylic resin, a polyimide resin, an acrylic resin, or an inorganic material such as a silicon compound.

A pixel defining layer forming material is applied to the entire upper portion of the pixel electrode 3300 and the insulating layer 3200, and then partially etched to form a pixel defining layer 3400 to expose a portion of the pixel electrode 3300. . For example, an opening for exposing the pixel electrode 3300 is formed by using a photolithography process or an etching process using an additional etching mask. In this case, the sidewall of the opening of the pixel defining layer 3400 may have an inclination angle that is substantially the same as or substantially similar to that of the inclination portion.

According to an embodiment of the present invention, as illustrated in FIG. 5, the pixel defining layer 3400 may include a first insulating layer to expose the recess formed by the first insulating layer 3210 and the second insulating layer 3220. It may be formed by etching to the upper surface (3210).

As openings are formed in the pixel definition layer 3400, light emitting regions and non-light emitting regions of the organic light emitting diode display are defined. Here, an area in which the opening of the pixel defining layer 3400 is located corresponds to the light emitting area, and an area adjacent to the opening corresponds to the non-light emitting area.

After the pixel definition layer 3400 is formed as described above, as illustrated in FIG. 5, a separate reflection surface 3700 is formed on the side of the pixel definition layer 3400. As the material for forming the reflective surface 3700, a material having a high reflectance is used even if the conductivity is small, so that the material selection range is wide. For example, the reflective surface 3700 may include at least one selected from the group consisting of Al, Ti, Mg, and Ag.

A spacer 3410 is formed on the reflective surface 3700. The spacer 3410 may be formed to extend over the pixel definition layer 3400 to cover the reflective surface 3700.

In detail, the reflective surface 3700 is buried between the pixel defining layer 3400 and the spacer 3410. Referring to FIG. 5, the reflective surface 3700 may be formed to enclose the pixel defining layer 3400. However, the reflective surface 3700 may be formed in any shape capable of reflecting light from the side surface.

Next, an organic light emitting layer 3500 is formed on the exposed pixel electrode 3300 and the spacer 3410.

The organic light emitting layer 3500 may be formed using light emitting materials capable of generating different color lights such as red light, green light, and blue light according to each pixel of the organic light emitting diode display. According to another example, the organic light emitting layer 3500 may have a multilayer structure in which a plurality of light emitting materials capable of realizing different color lights such as red light, green light, and blue light are stacked to emit white light. According to another example, the organic light emitting layer 3500 may further include a host material having a band gap substantially larger than that of the light emitting materials.

According to the exemplary embodiment of the present invention, the organic light emitting layer 3500 is positioned on the pixel electrode 3300. In addition, the organic light emitting layer 3500 extends from the pixel electrode 3300 in the emission region, and is formed on the pixel definition layer 3400 and the spacer 3410. That is, as shown in FIG. 5, the bottom of the organic light emitting layer 3500 is positioned on the pixel electrode 3300, and the side of the organic light emitting layer 3500 contacts the pixel defining layer 3400 and the spacer 3410.

According to the exemplary embodiment of the present invention, a first emission auxiliary layer may be formed between the pixel electrode 3300 and the organic light emitting layer 3500. In this case, the first emission auxiliary layer may include at least one of a hole injection layer and a hole transport layer. In addition, a second emission auxiliary layer may be formed between the organic light emitting layer 3500 and the common electrode 3600. In this case, the second emission auxiliary layer may include at least one of an electron injection layer and an electron transport layer.

Next, the common electrode 3600 is formed on the organic light emitting layer 3500. The common electrode 3600 may be formed to have a uniform thickness on the organic light emitting layer 3500. The common electrode 3600 may be formed using a reflective material. For example, the common electrode 3600 is a material selected from metals such as aluminum, silver, platinum, gold (Au), chromium, tungsten, molybdenum, titanium, palladium (Pd), iridium (Ir), and alloys thereof. It may include. These may be used alone or in combination with each other.

According to an embodiment of the present invention, the common electrode 3600 may be formed over the entire surface of the organic light emitting layer 3500. That is, the common electrode 3600 may be formed to extend on the pixel defining layer 3400 and the insulating layer 3200.

According to another example, the common electrode 3600 may be located only in the emission area. For example, the common electrode 3600 may be disposed on a portion of the organic light emitting layer 3500. In this case, after forming a common electrode layer (not shown) over the entire surface of the organic light emitting layer 3500, the common electrode layer may be patterned so that the common electrode 3600 may be selectively disposed only in the emission region.

According to an embodiment of the present invention, as shown in FIG. 5, an additional reflective surface 3700 is additionally formed on the pixel definition layer 3400 corresponding to the inclined portion of the insulating layer 3200. Light to be extinguished due to total reflection is reflected by the reflective surface 3700 and emitted to the substrate, thereby improving light extraction efficiency to the front surface.

Next, referring to FIG. 6, a structure of a blue pixel unit of an organic light emitting diode display according to another exemplary embodiment will be described.

The structure of the blue pixel portion may be the same as or substantially similar to that of the pixel portion according to the blue according to another example of the present invention described with reference to FIG. 2.

As illustrated in FIG. 6, the blue pixel unit of the organic light emitting diode display according to another exemplary embodiment includes an insulating layer formed by the first insulating layer 3210 and the second insulating layer 3220 at the time of forming the pixel definition layer 3400. Etching is performed so that the recess of the 3200 is not exposed, thereby minimizing the thickness reduction of the common electrode 3600 due to the inclination. Therefore, compared to the conventional organic light emitting diode display, the current uniformity defect due to the increased resistance of the common electrode can be minimized.

As shown in FIGS. 1, 3, and 5, the organic light emitting diode display according to the exemplary embodiments of the present invention may be referred to as a bottom emission type in which a display surface is formed toward a substrate. A reflective surface is formed in the inclined portion so that some of the light can be reflected from the reflective surface and emitted toward the substrate.

Specifically, some of the light generated in the light emitting layer is emitted directly toward the substrate, but a large amount of light is trapped inside the organic light emitting display. In particular, an optical waveguide is formed in a multi-layered organic light emitting display device. A large amount of light moves through the optical waveguide by total reflection and then disappears inside the organic light emitting display device. In this case, the reflective surface is disposed on the optical waveguide path so that the light traveling along the optical waveguide by total reflection is reflected on the reflective surface and emitted to the substrate.

As described above, in order to allow the reflective surface to be disposed on the optical waveguide, in the exemplary embodiments of the present invention, an inclined portion is formed in the insulating film and a reflective surface (reflective common electrode or a separate reflective surface) is disposed on the inclined portion. Light to be extinguished by total reflection is reflected on the reflective surface to be emitted toward the substrate, thereby improving light extraction efficiency.

2, 4, and 6, the organic light emitting diode display according to the exemplary embodiments of the present invention is caused by the formation of the inclined portion for reflecting light in the conventional organic light emitting diode display. The reduction in thickness of the common electrode can be minimized. Therefore, the organic light emitting diode display according to the present invention can minimize the current uniformity defect due to the increase in resistance of the common electrode as compared to the conventional organic light emitting diode display.

As described above, according to the present invention, the red pixel portion and the green pixel portion have a structure for improving front luminance, and the blue pixel portion has a structure for improving side luminance, that is, red, green, and blue pixel-specific structures are differentiated. By forming to form the visibility and light extraction efficiency according to the color difference can be improved.

Although the embodiments of the present invention have been described above with reference to the accompanying drawings, those skilled in the art may be embodied in other specific forms without changing the technical spirit or essential features of the present invention. You will understand that. Therefore, it should be understood that the embodiments described above are exemplary in all respects and not restrictive.

1100, 2100, 3100: substrate 1200, 2200, 3200: insulating film
1210, 2210, and 3210: first insulating film 1220, 2220, and 3220: second insulating film
1300, 2300, 3300: pixel electrodes 1400, 2400, 3400: pixel defining layer
2410, 3410: spacer 1500, 2500, 3500: organic light emitting layer
1600, 2600, 3600: common electrode 2700, 3700: reflective surface

Claims (17)

Board;
An insulating film disposed on the substrate;
A pixel electrode disposed on the insulating film;
A pixel definition layer overlapping an end portion of the pixel electrode and formed on the insulating layer, and defining a light emitting area and a non-light emitting area;
An organic light emitting layer disposed on all of the pixel electrode, the pixel definition layer, and the insulating layer; And
A common electrode disposed on the organic light emitting layer;
Including,
And the insulating layer has a concave portion disposed in a non-light emitting region around the pixel electrode. The method of claim 1,
And the organic light emitting layer is in contact with the pixel definition layer. The method of claim 1,
The recess includes a bottom portion and an inclined portion,
And a reflective surface disposed on the inclined portion. The method of claim 3,
The reflective surface overlaps at least a portion of the common electrode. The method of claim 2,
And the organic light emitting layer is in contact with the insulating layer. Board;
An insulating film disposed on the substrate;
A pixel electrode disposed on the insulating film;
A pixel definition layer overlapping an end portion of the pixel electrode and formed on the insulating layer, and defining a light emitting area and a non-light emitting area;
An organic light emitting layer disposed on all of the pixel electrode, the pixel definition layer, and the insulating layer; And
A common electrode disposed on the organic light emitting layer;
Including,
The insulating film has a concave portion disposed in a non-light emitting region around the pixel electrode,
And a spacer disposed on the concave portion. The method of claim 3,
And a reflective surface in contact with the inclined portion and the pixel defining layer. The method of claim 3,
And the reflective surface comprises at least one selected from the group consisting of Al, Ti, Mg, and Ag. The method of claim 1,
The insulating film includes a first insulating film; And a plurality of second insulating layers spaced apart from the first insulating layer,
The plurality of second insulating films have a convex shape,
The concave portion may include: a bottom portion formed on a portion of the first insulating layer corresponding to the spaced portions of the plurality of second insulating layers; And an inclined portion formed in the second insulating layer. The method of claim 1,
The insulating layer includes an organic material. The method of claim 10,
The organic material includes an organic polymer including at least one selected from the group consisting of an acrylic polymer, a polyimide polymer, a polyamide polymer, a siloxane polymer, a polymer containing a photosensitive acrylic carboxyl group, a novolak resin, and an alkali-soluble resin. Light emitting display device. The method of claim 1,
The insulating layer includes an inorganic material. The method of claim 12,
The inorganic material is silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy), silicon oxycarbide (SiOxCy), silicon carbonitride (SiCxNy), aluminum (Al), magnesium (Mg), zinc (Zn) ), Hafnium (Hf), zirconium (Zr), titanium (Ti), tantalum (Ta), aluminum oxide (AlOx), titanium oxide (TiOx), tantalum oxide (TaOx), magnesium oxide (MgOx), zinc oxide (ZnOx) ), Hafnium oxide (HfOx), zirconium oxide (ZrOx), and titanium oxide (TiOx). The method of claim 1,
The pixel electrode includes a red (R) pixel electrode, a green (G) pixel electrode, and a blue (B) pixel electrode. The method of claim 14,
The pixel electrode further comprises a white (W) pixel electrode. The method of claim 6,
And the organic light emitting layer is in contact with the pixel definition layer and the spacer. The method of claim 16,
And the organic light emitting layer does not contact the insulating layer.

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