JP2021128811A - 磁気記録媒体およびその製造方法ならびに磁気記憶装置 - Google Patents
磁気記録媒体およびその製造方法ならびに磁気記憶装置 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 49
- 239000000956 alloy Substances 0.000 claims abstract description 49
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 10
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 9
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- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 239000011261 inert gas Substances 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 138
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 43
- 239000000395 magnesium oxide Substances 0.000 description 23
- 229910005335 FePt Inorganic materials 0.000 description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 239000001301 oxygen Substances 0.000 description 9
- 229910052760 oxygen Inorganic materials 0.000 description 9
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- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 5
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- 239000011777 magnesium Substances 0.000 description 4
- 238000005204 segregation Methods 0.000 description 4
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
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- 230000002950 deficient Effects 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910052745 lead Inorganic materials 0.000 description 3
- 239000000314 lubricant Substances 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 238000001552 radio frequency sputter deposition Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 229910052702 rhenium Inorganic materials 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- WZFUQSJFWNHZHM-UHFFFAOYSA-N 2-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)CC(=O)N1CC2=C(CC1)NN=N2 WZFUQSJFWNHZHM-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910000599 Cr alloy Inorganic materials 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000007737 ion beam deposition Methods 0.000 description 2
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- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 239000010702 perfluoropolyether Substances 0.000 description 2
- 229910001149 41xx steel Inorganic materials 0.000 description 1
- 229910000521 B alloy Inorganic materials 0.000 description 1
- -1 C and VC Chemical compound 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 229910018979 CoPt Inorganic materials 0.000 description 1
- 206010021143 Hypoxia Diseases 0.000 description 1
- 229910000943 NiAl Inorganic materials 0.000 description 1
- NPXOKRUENSOPAO-UHFFFAOYSA-N Raney nickel Chemical compound [Al].[Ni] NPXOKRUENSOPAO-UHFFFAOYSA-N 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
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- 150000001247 metal acetylides Chemical class 0.000 description 1
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- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
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- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/73—Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
- G11B5/739—Magnetic recording media substrates
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- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
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- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
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- G11B5/62—Record carriers characterised by the selection of the material
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- G11B5/736—Non-magnetic layer under a soft magnetic layer, e.g. between a substrate and a soft magnetic underlayer [SUL] or a keeper layer
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- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
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- Manufacturing Of Magnetic Record Carriers (AREA)
Abstract
【解決手段】磁気記録媒体100は、基板1と、下地層2と、磁性層30をこの順で有する。下地層2は、一般式
MgO(1−X)
(式中、Xは、0.07〜0.25の範囲内である。)
で表される化合物を含む第1の下地層21を有する。磁性層3は、L10構造を有する合金を含む第1の磁性層31を有する。L10構造を有する合金は、Al、Si、GaおよびGeからなる群より選択される1種以上の元素を含む。第1の下地層21は、第1の磁性層31と接している。
【選択図】図1
Description
MgO(1−X)
(式中、Xは、0.07〜0.25の範囲内である。)
で表される化合物を含む第1の下地層を有し、前記磁性層は、L10構造を有する合金を含む第1の磁性層を有し、前記L10構造を有する合金は、Al、Si、GaおよびGeからなる群より選択される1種以上の元素を含み、前記第1の下地層は、前記第1の磁性層と接している、磁気記録媒体。
(2)前記L10構造を有する合金は、FeまたはCoと、Ptとをさらに含む、(1)に記載の磁気記録媒体。
(3)(1)または(2)に記載の磁気記録媒体を製造する方法であって、MgOを含むスパッタリングターゲットと、不活性ガスに水素が1体積%〜20体積%の範囲内で添加されているスパッタガスを用いて、前記第1の下地層を成膜する工程を含む、磁気記録媒体の製造方法。
(4)(1)または(2)に記載の磁気記録媒体を製造する方法であって、MgOを含むスパッタリングターゲットを用い、1Pa以上のスパッタガス圧で0.5秒以下の時間放電した後、0.5Pa以下のスパッタガス圧で放電して、前記第1の下地層を成膜する工程を含む、磁気記録媒体の製造方法。
(5)(1)または(2)に記載の磁気記録媒体を有する、磁気記憶装置。
図1に、本実施形態の磁気記録媒体の層構成の一例を示す。
MgO(1−X)・・・(A)
(式中、Xは、0.07〜0.25の範囲内である。)
で表される化合物を含む。
本実施形態の磁気記憶装置は、本実施形態の磁気記録媒体を有していれば、特に限定されない。
耐熱ガラス基板上に、厚さ50nmの50原子%Cr−50原子%Ti合金膜(第3の下地層)と、厚さ25nmの75原子%Co−20原子%Ta−5原子%B合金膜(軟磁性下地層)をこの順で成膜した。次に、基板を250℃まで加熱した後、厚さ10nmのCr膜(第2の下地層)を成膜した。このとき、第3の下地層、軟磁性下地層、第2の下地層の成膜には、DCマグネトロンスパッタ装置を用いた。
第1の下地層、第1の磁性層の成膜条件を変更した以外は(表1参照)、実施例1−1と同様にして、磁気記録媒体を作製した。
RFスパッタ装置を用いて、第1の下地層を以下のように成膜した以外は、実施例1−1と同様にして、磁気記録媒体を作製した。
第1の下地層、第1の磁性層の成膜条件を変更した以外は(表1参照)、実施例4−1と同様にして、磁気記録媒体を作製した。
X線回折装置(Philips製)を用いて、第2の磁性層を成膜した後の基板のX線回折スペクトルを測定し、FePt合金の(200)ピークの半値幅を求めた。
2 下地層
21 第1の下地層
22 第2の下地層
3 磁性層
31 第1の磁性層
32 第2の磁性層
100 磁気記録媒体
Claims (5)
- 基板と、下地層と、磁性層をこの順で有し、
前記下地層は、一般式
MgO(1−X)
(式中、Xは、0.07〜0.25の範囲内である。)
で表される化合物を含む第1の下地層を有し、
前記磁性層は、L10構造を有する合金を含む第1の磁性層を有し、
前記L10構造を有する合金は、Al、Si、GaおよびGeからなる群より選択される1種以上の元素を含み、
前記第1の下地層は、前記第1の磁性層と接している、磁気記録媒体。 - 前記L10構造を有する合金は、FeまたはCoと、Ptとをさらに含む、請求項1に記載の磁気記録媒体。
- 請求項1または2に記載の磁気記録媒体を製造する方法であって、
MgOを含むスパッタリングターゲットと、不活性ガスに水素が1体積%〜20体積%の範囲内で添加されているスパッタガスを用いて、前記第1の下地層を成膜する工程を含む、磁気記録媒体の製造方法。 - 請求項1または2に記載の磁気記録媒体を製造する方法であって、
MgOを含むスパッタリングターゲットを用い、1Pa以上のスパッタガス圧で0.5秒以下の時間放電した後、0.5Pa以下のスパッタガス圧で放電して、前記第1の下地層を成膜する工程を含む、磁気記録媒体の製造方法。 - 請求項1または2に記載の磁気記録媒体を有する、磁気記憶装置。
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US17/141,367 US11189313B2 (en) | 2020-02-13 | 2021-01-05 | Magnetic recording medium utilizing adjacent underlayer and magnetic layer having particular compositions, magnetic storage apparatus, and method of manufacturing magnetic recording medium |
CN202110087148.3A CN113257286B (zh) | 2020-02-13 | 2021-01-22 | 磁记录介质及其制造方法以及磁存储装置 |
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JP3730822B2 (ja) * | 1999-11-08 | 2006-01-05 | 日立マクセル株式会社 | 磁気記録媒体、及び磁気記録装置 |
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