JP2021127508A - 成膜方法 - Google Patents
成膜方法 Download PDFInfo
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- JP2021127508A JP2021127508A JP2020023765A JP2020023765A JP2021127508A JP 2021127508 A JP2021127508 A JP 2021127508A JP 2020023765 A JP2020023765 A JP 2020023765A JP 2020023765 A JP2020023765 A JP 2020023765A JP 2021127508 A JP2021127508 A JP 2021127508A
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- 238000000034 method Methods 0.000 title claims abstract description 56
- 230000015572 biosynthetic process Effects 0.000 title claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 104
- 239000000463 material Substances 0.000 claims abstract description 23
- 150000007524 organic acids Chemical group 0.000 claims abstract description 9
- 239000013545 self-assembled monolayer Substances 0.000 claims description 153
- 239000002094 self assembled monolayer Substances 0.000 claims description 134
- 239000007789 gas Substances 0.000 claims description 85
- 239000002994 raw material Substances 0.000 claims description 64
- 239000010702 perfluoropolyether Substances 0.000 claims description 55
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- 238000000137 annealing Methods 0.000 claims description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 10
- 229910052760 oxygen Inorganic materials 0.000 claims description 10
- 239000001301 oxygen Substances 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 4
- 125000000217 alkyl group Chemical group 0.000 claims description 3
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical group FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims description 2
- 239000012528 membrane Substances 0.000 claims description 2
- 239000002356 single layer Substances 0.000 claims description 2
- 150000001735 carboxylic acids Chemical class 0.000 claims 2
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- 239000007858 starting material Substances 0.000 abstract 2
- 238000012545 processing Methods 0.000 description 49
- 238000001514 detection method Methods 0.000 description 22
- 229910021417 amorphous silicon Inorganic materials 0.000 description 20
- YUYCVXFAYWRXLS-UHFFFAOYSA-N trimethoxysilane Chemical compound CO[SiH](OC)OC YUYCVXFAYWRXLS-UHFFFAOYSA-N 0.000 description 20
- 239000010949 copper Substances 0.000 description 19
- 238000011282 treatment Methods 0.000 description 17
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
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- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
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- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 3
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- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 3
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- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
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- 150000002500 ions Chemical class 0.000 description 2
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- 229910000077 silane Inorganic materials 0.000 description 2
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- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
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- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
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- 125000003545 alkoxy group Chemical group 0.000 description 1
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- HDFRDWFLWVCOGP-UHFFFAOYSA-N carbonothioic O,S-acid Chemical compound OC(S)=O HDFRDWFLWVCOGP-UHFFFAOYSA-N 0.000 description 1
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- 229910017052 cobalt Inorganic materials 0.000 description 1
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- 230000000052 comparative effect Effects 0.000 description 1
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- LBJNMUFDOHXDFG-UHFFFAOYSA-N copper;hydrate Chemical compound O.[Cu].[Cu] LBJNMUFDOHXDFG-UHFFFAOYSA-N 0.000 description 1
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- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 150000003573 thiols Chemical class 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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Abstract
Description
図1は、実施形態に係る成膜方法の一例を示すフローチャートである。図2及び図3は、図1に示す各工程での基板の状態の一例を示す断面図である。図2(A)〜図2(D)及び図3(A)〜図3(D)は、それぞれ、図1に示す工程S101〜S108に対応する基板10の状態を示す。
次に、本開示の一実施形態に係る成膜方法を実施するためのシステムについて説明する。
次に、酸化還元処理装置200、成膜装置400のような成膜装置、およびSAM形成装置300の一例について説明する。
11、11A 絶縁膜
12 a−Si膜
12A 酸化膜
13、13A、14、14A、14M、14MA SAM
15 対象膜
16 下地基板
Claims (11)
- 第1領域の表面に形成された第1材料の層と、第2領域の表面に形成された前記第1材料とは異なる第2材料の層と、を有する基板を準備する工程と、
前記第1材料に応じた第1の自己組織化膜の原料ガスを供給し、前記第1領域に第1の自己組織化膜を形成する第1のSAM形成工程と、
有機酸基を含み自己組織化分子を有する第1のガス、又は、縮合性基を含み自己組織化分子を有する第2のガスを供給し、前記有機酸基を有する第2の自己組織化膜、又は、縮合性基を有する第2の自己組織化膜を前記第1領域で前記第1の自己組織化膜の上側に形成する第2のSAM形成工程と、
を含む、成膜方法。 - 前記第1のSAM形成工程の後で前記第2のSAM形成工程を行う前に、前記基板を100℃〜300℃に加熱してアニール処理する工程をさらに含む、請求項1に記載の成膜方法。
- 前記第2のSAM形成工程で前記第1のガスを供給して前記第2の自己組織化膜を形成する場合には、前記第1の自己組織化膜の原料ガスは、前記第1の自己組織化膜として主鎖に酸素を含む自己組織化膜を形成可能な原料ガスである、請求項1又は2に記載の成膜方法。
- 前記第1の自己組織化膜の原料ガスは、パーフルオロポリエーテル基含有アルコキシシランを含む原料ガスである、請求項3に記載の成膜方法。
- 前記第1の自己組織化膜の原料ガスは、パーフルオロポリエーテル基含有ハロシランを含む原料ガスである、請求項3に記載の成膜方法。
- 前記第1の自己組織化膜の原料ガスは、パーフルオロポリエーテル基含有カルボン酸を含む原料ガス、又は、フルオロカーボン基あるいはアルキル基を有するチオールを含む原料ガスである、請求項3に記載の成膜方法。
- 前記第1のガスは、パーフルオロポリエーテル基含有カルボン酸を含む原料ガスである、請求項4乃至6のいずれか一項に記載の成膜方法。
- 前記第2のSAM形成工程で前記第2のガスを供給して前記第2の自己組織化膜を形成する場合には、前記第1の自己組織化膜の原料ガスは、パーフルオロポリエーテル基含有アルコキシシラン、又は、パーフルオロポリエーテル基含有ハロシランを含む原料ガスである、請求項1又は2に記載の成膜方法。
- 前記第2のガスは、パーフルオロポリエーテル基含有アルコキシシラン、又は、パーフルオロポリエーテル基含有ハロシランを含む原料ガスである、請求項8に記載の成膜方法。
- 前記第2のSAM形成工程の後に、前記第2領域に、対象膜を形成する成膜工程をさらに含む、請求項1乃至9のいずれか一項に記載の成膜方法。
- 前記対象膜を形成する成膜工程の後に、前記第1の自己組織化膜及び前記第2の自己組織化膜を除去するSAM除去工程をさらに含む、請求項10に記載の成膜方法。
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