JP2021118114A - Plasma source and plasma processing device - Google Patents

Abstract

To shorten a distance from an antenna to the inside of a vacuum vessel by using a slit plate, and flexibly and easily change the slit width.SOLUTION: A plasma source that generates plasma inside a vacuum vessel by passing a high-frequency current through an antenna 2 provided outside the vacuum vessel includes a first slit plate 71 that closes an opening formed at a position facing the antenna 2 of the vacuum vessel, a dielectric plate 8 that closes a formed first slit 71x from the outside of the vacuum vessel, and a second slit plate 72 that is provided at a position between the first slit plate 71 and the dielectric plate 8 or at a position where the dielectric plate 8 is sandwiched between the first slit plate 71 and the second slit plate, and in which a second slit 72x a part of which overlaps with the first slit 71x is formed, and a high-frequency magnetic field generated from the antenna 2 is transmitted into the vacuum vessel through an actual slit 7x in which the first slit 71x and the second slit 72 overlap each other.SELECTED DRAWING: Figure 3

Description

The present invention relates to a plasma source for generating plasma in a vacuum vessel, and a plasma processing apparatus provided with this plasma source.

Conventionally, a plasma processing device that applies a high-frequency current to an antenna, generates inductively coupled plasma (abbreviated as ICP) by an induced electric field generated by the high-frequency current, and processes an object to be processed such as a substrate by using this inductively coupled plasma. Proposed by. As such a plasma processing apparatus, Patent Document 1 states that an antenna is arranged outside the vacuum vessel, and a high-frequency magnetic field generated from the antenna is applied to the inside of the vacuum vessel through a dielectric window provided so as to close the opening of the side wall of the vacuum vessel. Disclosed is a device that generates plasma in a processing chamber by allowing the plasma to pass through the processing chamber.

JP-A-2017-004665

However, in the above-mentioned plasma processing apparatus, since the dielectric window is used as a part of the side wall of the vacuum vessel, the dielectric window is strong enough to withstand the differential pressure inside and outside the vessel when the inside of the vacuum vessel is evacuated. Must have. In particular, since the dielectric material constituting the dielectric window is ceramics or glass having low toughness, it is necessary to sufficiently increase the thickness of the dielectric window in order to have sufficient strength to withstand the above-mentioned differential pressure. Therefore, there is a problem that the distance from the antenna to the processing chamber in the vacuum vessel becomes long, the strength of the induced electric field in the processing chamber becomes weak, and the plasma generation efficiency decreases.

Therefore, in developing the present invention, the inventor of the present application includes a slit plate for closing the opening of the vacuum container and a dielectric plate for closing the slit formed in the slit plate from the outside of the vacuum container, as shown in FIG. I thought about the plasma source in the middle.
In such a configuration, since the slit plate and the dielectric plate superposed on the slit plate have a function as a magnetic field transmission window, only the dielectric plate has a function as a magnetic field transmission window. The thickness of the magnetic field transmission window can be reduced as compared with the case where the magnetic field is transmitted. As a result, the distance from the antenna to the inside of the vacuum vessel can be shortened, and the high-frequency magnetic field generated from the antenna can be efficiently supplied into the vacuum vessel.

By the way, when it is desired to change the plasma characteristics (for example, plasma density and ion energy) in plasma processing, of course, the operating conditions such as the flow rate of the raw material gas for generating plasma and the bias voltage applied to the object to be processed should be changed. However, in addition to these operating conditions, it may be effective to change the slit width of the slit plate described above.

However, in the above-mentioned plasma processing apparatus, if a plurality of types of slit plates are possessed according to the application, such as for changing the plasma characteristics, the cost increases and the work time and labor for replacing the slit plates are increased. Is required.

Therefore, the present invention has been made to solve such a problem at once, and in a configuration in which the antenna is arranged outside the vacuum container, the distance from the antenna to the inside of the vacuum container is shortened by using a slit plate. The main task is to make it possible to change the slit width flexibly and easily.

That is, the plasma source according to the present invention is a plasma source that causes a high-frequency current to flow through an antenna provided outside the vacuum vessel to generate plasma in the vacuum vessel, and is formed at a position facing the antenna of the vacuum vessel. Between the first slit plate that closes the opened opening, the dielectric plate that closes the first slit formed in the first slit plate from the outside of the vacuum vessel, and between the first slit plate and the dielectric plate, or It is provided with a second slit plate provided at a position where the dielectric plate is sandwiched between the first slit plate and at least a part of which is formed with a second slit that overlaps with the first slit, and is generated from the antenna. It is characterized in that a high-frequency magnetic field is transmitted into the vacuum vessel through an actual slit formed by overlapping the first slit and the second slit with each other.

According to the plasma source configured in this way, since the second slit plate is provided separately from the first slit plate, the first slit plate can be adjusted by adjusting the degree of overlap between the first slit plate and the second slit plate. The actual slit can be changed to various slit widths without removing the slit plate.
As a result, in the configuration in which the antenna is arranged outside the vacuum container, the distance from the antenna to the inside of the vacuum container is shortened by using the first slit plate, and the position of the second slit plate with respect to the first slit plate is adjusted. Therefore, the width of the actual slit can be changed flexibly and easily.

It is preferable to provide a plurality of the second slit plates.
In this case, not only the overlapping condition of the first slit plate and the second slit plate but also the overlapping condition of the second slit plates can be adjusted, and the width of the actual slit can be changed more variously. .. Thereby, for example, by preparing a plurality of second slits having the same shape, the actual slits can be changed to various widths while suppressing the increase in cost as much as possible.

By the way, when the second slit plate is interposed between the first slit and the dielectric plate, for example, in order to replace the second slit plate, after opening the vacuum container to the atmosphere, the second slit plate is replaced and the vacuum is exhausted again. Each time, maintenance inside the vacuum vessel is required, which requires time and labor.
Therefore, it is preferable that the second slit plate is provided at a position where the dielectric plate is sandwiched between the second slit plate and the first slit plate.
In this case, while keeping the vacuum container in a vacuum, the second slit plate can be replaced or the position can be adjusted, for example, and workability and maintainability can be improved.

As a more specific embodiment, the first slit plate has a long shape, and a plurality of the first slits are formed along the longitudinal direction thereof, and the second slit plate has a length. A plurality of the second slits are formed in a scale shape along the longitudinal direction thereof, and the first slit and the plurality of actual slits formed by overlapping the second slits have the same shape as each other. Aspects can be mentioned.
With such a configuration, since the plurality of actual slits have the same shape, the plasma density in the longitudinal direction can be made uniform as described above.

The second slit plate is formed by alternately providing two types of the second slits having different dimensions along the longitudinal direction along the longitudinal direction, and the second of the two types. The slit is formed so as to straddle both of the first slits adjacent to each other, and the other second slit of the two types has a shorter dimension along the longitudinal direction than the one second slit. , It is preferable that they overlap only one of the first slits adjacent to each other.
In such a configuration, of the two types of second slits provided alternately, three consecutive second slits (long, short, and long in the longitudinal direction) are one first. It overlaps with one slit. Therefore, an actual slit formed by dividing the first slit into three parts can be realized by one second slit plate.

It is preferable that the second slit plate is in the form of a thin film.
In this case, since the second slit plate is thin, the antenna can be brought closer to the inside of the vacuum vessel.

A recess on which the second slit is placed is formed on the outward surface of the first slit plate, and the inner surface of the recess abuts on the outer surface of the second slit plate to form the second slit. It is preferable to function as a positioning surface for positioning with respect to the first slit.
With such a configuration, the positioning of the second slit with respect to the first slit plate can be simplified.

Further, a plasma processing apparatus including a vacuum vessel and the above-mentioned plasma source is also one of the present inventions, and such a plasma processing apparatus can exert the same action and effect as the above-mentioned plasma source.

According to the present invention configured as described above, in the configuration in which the antenna is arranged outside the vacuum container, the distance from the antenna to the inside of the vacuum container is shortened by using the first slit plate, and the first slit plate is provided. By adjusting the position of the two-slit plate, the width of the actual slit can be changed flexibly and easily.

The vertical sectional view which shows typically the structure of the plasma processing apparatus of one Embodiment. The cross-sectional view which shows typically the structure of the plasma processing apparatus of the same embodiment. FIG. 5 is a cross-sectional view showing a state in which the second slit in the same embodiment is in the fully open position. FIG. 5 is a cross-sectional view showing a state in which the second slit in the same embodiment is in the half-open position. FIG. 5 is a cross-sectional view showing a state in which the second slit in the same embodiment is in a subdivided position. The schematic diagram which shows the 2nd slit plate in another embodiment. The schematic diagram which shows the 2nd slit plate in another embodiment. The schematic diagram which shows the structure of the plasma processing apparatus which was examined in the middle in the development of this invention.

Hereinafter, an embodiment of the plasma source and the plasma processing apparatus according to the present invention will be described with reference to the drawings.

<Device configuration>
The plasma processing apparatus 100 of the present embodiment processes the substrate W using an inductively coupled plasma P. Here, the substrate W is, for example, a substrate for a flat panel display (FPD) such as a liquid crystal display or an organic EL display, a flexible substrate for a flexible display, and the like. The treatment applied to the substrate W is, for example, film formation, etching, ashing, sputtering, etc. by the plasma CVD method.

The plasma processing device 100 is also called a plasma CVD device when forming a film by a plasma CVD method, a plasma etching device when performing etching, a plasma ashing device when performing ashing, and a sputtering device when performing sputtering. ..

Specifically, as shown in FIGS. 1 and 2, the plasma processing apparatus 100 includes a vacuum vessel 1 that is evacuated and introduced with gas G, and a plasma source 200 that generates plasma P inside the vacuum vessel 1. The plasma source 200 includes an antenna 2 provided outside the vacuum vessel 1 and a high-frequency power source 3 for applying a high frequency to the antenna 2. In such a configuration, by applying a high frequency from the high frequency power supply 3 to the antenna 2, a high frequency current IR flows through the antenna 2, an inductive electric field is generated in the vacuum vessel 1, and an inductively coupled plasma P is generated.

The vacuum container 1 is, for example, a metal container, and its wall (here, the upper wall 1a) is formed with an opening 1x penetrating in the thickness direction. The vacuum container 1 is electrically grounded here, and the inside thereof is evacuated by the vacuum exhaust device 4.

Further, the gas G is introduced into the vacuum vessel 1 via, for example, a flow rate regulator (not shown) or one or a plurality of gas introduction ports 11 provided in the vacuum vessel 1. The gas G may be set according to the processing content to be applied to the substrate W. For example, when performing film formation on the substrate W by the plasma CVD method, a gas G is a gas diluted with the raw material gas or a dilution gas (e.g., H _2). To give a more specific example, when the raw material gas is SiH _4, a Si film is used, when SiH ₄ + NH ₃ is used, a SiN film is used, when SiH ₄ + O ₂ is used, a SiO ₂ film is used, and when SiF ₄ + N ₂ is used, a SiN film is used. : The F film (fluoride silicon nitride film) can be formed on the substrate W, respectively.

Inside the vacuum container 1, a substrate holder 5 for holding the substrate W is provided. As in this example, a bias voltage may be applied to the substrate holder 5 from the bias power supply 6. The bias voltage is, for example, a negative DC voltage, a pulse voltage, or the like, but is not limited thereto. With such a bias voltage, for example, the energy when the cations in the plasma P are incident on the substrate W can be controlled to control the crystallinity of the film formed on the surface of the substrate W. .. A heater 51 for heating the substrate W may be provided in the substrate holder 5.

As shown in FIGS. 1 and 2, the antenna 2 is arranged so as to face the opening 1x formed in the vacuum vessel 1. The number of antennas 2 is not limited to one, and a plurality of antennas 2 may be provided.

As shown in FIG. 2, the antenna 2 is connected to a high-frequency power supply 3 via a matching circuit 31 at a feeding end 2a, which is one end thereof, and the terminal 2b, which is the other end, is directly grounded. ing. The terminal portion 2b may be grounded via a capacitor, a coil, or the like.

The high-frequency power supply 3 can pass a high-frequency current IR through the matching circuit 31 to the antenna 2. The frequency of the high frequency is, for example, 13.56 MHz, which is generally used, but the frequency is not limited to this and may be changed as appropriate.

Here, the plasma source 200 of the present embodiment has a slit member 7 that closes the opening 1x formed in the wall (upper wall 1a) of the vacuum container 1 from the outside of the vacuum container 1 and a slit 7x formed in the slit member 7. Is further provided with a dielectric plate 8 for closing the vacuum container 1 from the outside.

The slit member 7 is formed with a slit 7x penetrating in the thickness direction thereof, and allows a high-frequency magnetic field generated from the antenna 2 to pass through the vacuum vessel 1 and from the outside of the vacuum vessel 1 to the vacuum vessel 1. It prevents the electric field from entering the inside.

Specifically, as shown in FIG. 3, the slit member 7 is specifically a flat plate having a plurality of slits 7x parallel to each other, and has higher mechanical strength than the dielectric plate 8 described later. It is preferable that the thickness dimension is larger than that of the dielectric plate 8.

More specifically, the slit member 7 is one type selected from the group containing, for example, Cu, Al, Zn, Ni, Sn, Si, Ti, Fe, Cr, Nb, C, Mo, W or Co. A metal material such as a metal or an alloy thereof (for example, a stainless alloy, an aluminum alloy, etc.) is produced by rolling (for example, cold rolling or hot rolling), and has a thickness of, for example, about 5 mm. However, the manufacturing method and thickness are not limited to this, and may be appropriately changed according to the specifications.

As shown in FIG. 3, the slit member 7 is larger than the opening 1x of the vacuum container 1 in a plan view, and closes the opening 1x while being supported by the upper wall 1a. A sealing member S such as an O-ring or a gasket is interposed between the slit member 7 and the upper wall 1a, and a vacuum seal is provided between them.

The dielectric plate 8 is provided on the outward surface of the slit member 7 (the back surface of the inward surface facing the inside of the vacuum vessel 1) to close the slit of the slit plate.

The dielectric plate 8 has a flat plate shape that is entirely composed of a dielectric material, and is, for example, ceramics such as alumina, silicon carbide, and silicon nitride, inorganic materials such as quartz glass and non-alkali glass, and fluororesin (for example, fluororesin). It is made of a resin material such as Teflon). From the viewpoint of reducing dielectric loss, the material constituting the dielectric plate 8 preferably has a dielectric loss tangent of 0.01 or less, and more preferably 0.005 or less.

Here, the thickness of the dielectric plate 8 is made smaller than the thickness of the slit member 7, but the thickness is not limited to this. For example, when the vacuum container 1 is evacuated, the inside and outside of the vacuum container 1 received from the slit 7x. It suffices to have a strength capable of withstanding the differential pressure of the above, and may be appropriately set according to specifications such as the number and length of the slits 7x. However, it is preferable that the antenna 2 is thin from the viewpoint of shortening the distance between the antenna 2 and the vacuum vessel 1.

With such a configuration, the slit member 7 and the dielectric plate 8 function as a magnetic field transmission window 9 for transmitting a magnetic field. That is, when a high frequency is applied from the high frequency power source 3 to the antenna 2, the high frequency magnetic field generated from the antenna 2 passes through the magnetic field transmission window 9 composed of the slit member 7 and the dielectric plate 8 and is formed (supplied) in the vacuum vessel 1. Will be done. As a result, an induced electric field is generated in the space inside the vacuum vessel 1, and inductively coupled plasma P is generated.

However, as shown in FIG. 3, the slit member 7 is composed of a plurality of types of slit plates, and more specifically, the first slit plate 71 in which the first slit 71x is formed, and at least a part of the first slit plate 71. It has a second slit plate 72 in which a second slit 72x that overlaps the one slit 71x is formed.

The first slit plate 71 closes the opening of the vacuum container 1, is supported by the upper wall 1a of the vacuum container 1, and supports the dielectric plate 8 by its outward surface. An adhesive material (not shown) for sealing between the outward surface and the dielectric plate 8 is provided. The adhesive material is a highly viscous lubricating oil having a low vapor pressure, specifically vacuum grease.

Specifically, as shown in FIG. 3, the first slit 71x is, for example, a long flat plate having a rectangular shape in a plan view, and a plurality (here, five as an example) along the longitudinal direction thereof. The first slit 71x of the above is formed.

These first slits 71x have the same shape as each other, for example, a substantially rectangular shape in a plan view, and are provided at equal intervals along the longitudinal direction.

The second slit plate 72 is provided between the first slit plate 71 and the dielectric plate 8 in this embodiment.

Specifically, as shown in FIG. 3, the second slit plate 72 is, for example, a long flat plate having a rectangular shape in a plan view, and a plurality of the second slit plates 72 (here, six as an example) along the longitudinal direction thereof. ) Second slit 72x is formed. Although the second slit 72x is provided one more than the first slit 71x here, the number thereof is not limited to this embodiment, and may be the same number as, for example, the first slit 71x.

These second slits 72x have the same shape as each other, for example, a substantially rectangular shape in a plan view, and are provided at equal intervals along the longitudinal direction. The second slit 72x here has the same shape as the first slit 71x, but the shape may be different from that of the first slit 71x and may be changed as appropriate. Further, although the arrangement interval of the second slit 72x is the same as the arrangement interval of the first slit 71x here, these arrangement intervals may be changed as appropriate.

Then, in the above-described configuration, as shown in FIG. 3, the overlapping portion of the first slit 71x and the second slit 72x is formed as the slit 7x (hereinafter, also referred to as the actual slit 7x) of the slit member 7 described above. The high-frequency magnetic field generated from the antenna 2 is transmitted into the vacuum vessel 1 through the actual slit 7x.

The second slit plate 72 of the present embodiment is provided in the recess c formed on the outward surface of the first slit plate 71, and slides in the recess c at least before the assembly of the plasma source 200 is completed. Can be placed. The second slit plate 72 here is fixed at that position after being slid and moved in the recess c to be positioned with respect to the first slit plate 71. However, the second slit plate 72 may be slidable in the recess c even after the assembly of the plasma source 200 is completed.

The recess c has a dimension along the longitudinal direction longer than the longitudinal direction of the second slit plate 72, and a dimension along the lateral direction orthogonal to the longitudinal direction is substantially the same as or substantially the same as the lateral direction of the second slit plate 72. It is set a little short. With this configuration, the inner side surface c1 along the longitudinal direction of the recess c functions as a guide surface for guiding the slide movement of the second slit plate 72. On the other hand, the inner side surface c2 along the lateral direction of the recess c (in other words, orthogonal to the guide surface) abuts on the outer surface of the second slit plate 72 along the lateral direction, and the second slit 72x is formed. It functions as a positioning surface for positioning with respect to the first slit 71x.

In the present embodiment, a plurality of second slit plates 72 (specifically, two) are provided, and all of these second slit plates 72 are housed in the recess c described above. Specifically, in a state where a plurality of second slit plates 72 are housed in the recess c, the outward surface of the first slit plate 71 and the outward surface of the second slide plate located on the outermost side are formed. It has the same flat shape, and a dielectric plate 8 is provided on these outward surfaces.

Here, the second slit plate 72 has a fully open position in which at least the entire first slit 71x is formed as an actual slit 7x, as shown in FIGS. 3 to 5, in a state where the second slit plate 72 is slidable in the recess c. The longitudinal half of the first slit 71x can be moved to and from the half-open position formed as the actual slit 7x, where a more subdivided region than the longitudinal half of the first slit 71x is actual. It is also movable to and from the subdivision position formed as the slit 7x.

In such a configuration, here, one of the inner side surfaces c2 along the lateral direction of the recess c functions as a positioning surface for positioning the second slit plate 72 in the fully open position, as shown in FIG. Although not shown, the other side of the inner side surface c2 along the lateral direction of the concave portion c may be configured to function as a positioning surface for positioning the second slit plate 72 at the half-open position or the subdivided position. good.

With the above-described configuration, a plurality of actual slits 7x are formed in the same shape as each other and at equal intervals with each other in a state where the second slit plate 72 is in the fully open position, the half open position, and the subdivided position. .. In this embodiment, in a state where the second slit plate 72 is in the subdivided position, each region of the first slit 71x divided into three along the longitudinal direction is formed as an actual slit 7x. ..

<Effect of this embodiment>
According to the plasma processing apparatus 100 and the plasma source 200 of the present embodiment configured in this way, since the second slit plate 72 is provided separately from the first slit plate 71, the first slit plate 71 and the second slit plate 71 are provided. By adjusting the degree of overlap with 72, the actual slit 7x can be changed to various slit widths without removing the first slit plate 71.
As a result, in the configuration in which the antenna 2 is arranged outside the vacuum container 1, the distance from the antenna 2 to the inside of the vacuum container 1 is shortened by using the first slit plate 71, and the second slit with respect to the first slit plate 71. By adjusting the position of the plate 72, the width of the actual slit 7x can be changed flexibly and easily.

Further, since a plurality of second slit plates 72 are provided, not only the degree of overlap between the first slit plate 71 and the second slit plate 72 but also the degree of overlap between the second slit plates 72 can be adjusted. , The width of the actual slit 7x can be changed more variously.
Further, since these second slit plates 72 have the same shape as each other, the actual slit 7x can be changed to various widths while suppressing the increase in cost as much as possible.

In addition, since the plurality of actual slits 7x have the same shape, the plasma density can be made uniform in the longitudinal direction.

Further, since the inner side surface c2 of the recess c provided in the first slit 71x in the lateral direction functions as a positioning surface for positioning the second slit 72x with respect to the first slit 71x, the second slit plate 71 is second. The positioning of the slit 72x can be simplified, and the reproducibility of the position can be improved.

<Other modified embodiments>
The present invention is not limited to the above embodiment.

For example, in the above embodiment, the second slit plate 72 is provided between the first slit plate 71 and the dielectric plate 8, but as shown in FIG. 6, one or a plurality of second slit plates 72 may be provided at a position where the dielectric plate 8 is sandwiched between the first slit plate 71 and the first slit plate 71.
With such a configuration, the second slit plate 72 can be replaced, for example, adjusted in position while keeping the vacuum container 1 in a vacuum, and workability and maintainability can be improved.

Further, in the above-described embodiment, two second slit plates 72 are provided, but the number of the second slit plates 72 may be one or three or more.

Further, in the above embodiment, the case where the second slit plate 72 is provided at the fully open position, the half open position, or the subdivided position has been described, but the second slit plate 72 may be provided at a position different from these positions.

The second slit plate 72 may be a thin film such as a slit sheet.
In this case, since the second slit plate 72 is thin, the antenna 2 can be brought closer to the inside of the vacuum container 1.

Further, as shown in FIG. 7, the second slit plate 72 has two types of second slits 72x (hereinafter, these are also referred to as a long slit 72xa and a long slit 72xb) having different dimensions along the longitudinal direction in the longitudinal direction. It may be provided alternately along the above.
Then, one of these two types of long slits 72xa is formed so as to straddle both of the first slits 71x adjacent to each other, and the other long slit 72xb of the two types is larger than the long slit 72xa. The dimension along the longitudinal direction may be short, and it may be configured so as to overlap only one of the first slits 71x adjacent to each other.
In such a configuration, three consecutive long slits 72xa, long slits 72xb, and long slits 72xa of the two types of second slits 72x provided alternately overlap one first slit 71x. Therefore, the actual slit 7x formed by dividing the first slit 71x into three, that is, the actual slit 7x formed by moving the two second slit plates 72 to the subdivision positions in the above embodiment, is the one second slit. It can be realized by the plate 72.

Further, the materials of the first slit plate 71 and the second slit plate 72 may be different from each other. Further, the thicknesses of the first slit plate 71 and the second slit plate 72 may be appropriately changed.

In addition, the present invention is not limited to the above-described embodiment, and it goes without saying that various modifications can be made without departing from the spirit of the present invention.

100 ... Plasma processing device 200 ... Plasma source W ... Substrate P ... Plasma 1 ... Vacuum container 2 ... Antenna 7 ... Slit member 7x ... Actual slit 71 ... 1st slit plate 71x ・ ・ ・ 1st slit 72 ・ ・ ・ 2nd slit plate 72x ・ ・ ・ 2nd slit 72x1 ・ ・ ・ Long slit 72x2 ・ ・ ・ Short slit c ・ ・ ・ Recessed c1 ・ ・ ・ Inner side surface c2・ ・ ・ Inner side surface 8 ・ ・ ・ Dielectric plate

Claims (8)

A plasma source that generates plasma in the vacuum vessel by passing a high-frequency current through an antenna provided outside the vacuum vessel.
A first slit plate that closes an opening formed at a position facing the antenna of the vacuum container, and a first slit plate.
A dielectric plate that closes the first slit formed in the first slit plate from the outside of the vacuum vessel, and a dielectric plate.
A second slit is formed between the first slit plate and the dielectric plate or at a position where the dielectric plate is sandwiched between the first slit plate and at least a part thereof overlaps with the first slit. Equipped with a second slit plate
A plasma source in which a high-frequency magnetic field generated from the antenna is transmitted into the vacuum vessel through an actual slit formed by overlapping the first slit and the second slit. The plasma source according to claim 1, further comprising a plurality of the second slit plates. The plasma source according to claim 1 or 2, wherein the second slit plate is provided at a position where the dielectric plate is sandwiched between the second slit plate and the first slit plate. The first slit plate has an elongated shape, and a plurality of the first slits are formed along the longitudinal direction thereof.
The second slit plate has an elongated shape, and a plurality of the second slits are formed along the longitudinal direction thereof.
The plasma source according to any one of claims 1 to 3, wherein the first slit and the plurality of actual slits formed by overlapping the second slits have the same shape as each other. The second slit plate is formed by alternately providing two types of the second slits having different dimensions along the longitudinal direction along the longitudinal direction.
The second slit of one of the two types is formed so as to straddle both of the first slits adjacent to each other.
The plasma according to claim 4, wherein the second slit of the other of the two types has a shorter dimension along the longitudinal direction than the second slit of one, and overlaps only one of the first slits adjacent to each other. source. The plasma source according to any one of claims 1 to 5, wherein the second slit plate is in the form of a thin film. A recess on which the second slit is placed is formed on the outward surface of the first slit plate, and the inner surface of the recess abuts on the outer surface of the second slit plate to form the second slit. The plasma source according to any one of claims 1 to 6, which functions as a positioning surface for positioning with respect to the first slit. With a vacuum container
A plasma processing apparatus comprising the plasma source according to any one of claims 1 to 7.

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