KR102476772B1 - Apparatus for processing substrates - Google Patents

Abstract

A substrate processing apparatus according to an embodiment of the present invention includes a chamber including a processing space accommodating a substrate to be processed and an antenna accommodating space accommodating an antenna arranged to face the substrate to be processed, provided in the chamber and the processing space and a plurality of windows partitioning the antenna accommodating space, a window support frame supporting the plurality of windows, and a heating plate provided on an upper surface of the plurality of windows to heat the plurality of windows, wherein the window support frame comprises: A support protrusion protrudes toward the window to support the window, and the heating plate is provided to overlap the support protrusion.

Description

Substrate processing apparatus {Apparatus for processing substrates}

The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus using an inductively coupled plasma.

In devices that perform substrate processing such as CVD (Chemical Vapor Deposition) and etching using plasma, there are many methods of generating plasma by applying high-frequency power to a device including an antenna to form an induction electric field around the antenna. is being applied

A plasma processing apparatus using an induced electric field necessarily uses an antenna for generating an induced electric field and a window for protecting the antenna from plasma.

However, by-products generated in the substrate processing process using plasma are attached to a window having a relatively low temperature in the chamber during the process, and thus the replacement cycle of the window is shortened or maintenance/repair to remove the by-products attached to the window is required.

Accordingly, there is a technique for minimizing by-products attached to the window using a heater that heats the window, but a heater using electric current is affected by electromagnetic waves generated by the operation of the heater, so the plasma distribution is changed or the plasma distribution is uniform. There may be problems with lowering the gender.

An object to be solved by the present invention is to provide a substrate processing apparatus that reduces adhesion of by-products to windows without significantly affecting an induced electric field for generating plasma.

The tasks of the present invention are not limited to the tasks mentioned above, and other tasks not mentioned will be clearly understood by those skilled in the art from the following description.

A substrate processing apparatus according to an embodiment of the present invention for solving the above object is a chamber including a processing space accommodating a substrate to be processed and an antenna accommodating space accommodating an antenna arranged to face the substrate to be processed, the chamber A plurality of windows provided within the processing space and the antenna accommodating space, a window support frame supporting the plurality of windows, and a heating plate provided on upper surfaces of the plurality of windows to heat the plurality of windows; , The window support frame includes a support protrusion protruding toward the window to support the window, and the heating plate is provided to overlap the support protrusion.

The heating plate may be disposed in an annular shape along an edge of the window.

A damping member provided between the support jaw and the window may be further included.

The damping member may provide thermal damping and physical damping between the support jaw and the window.

The damping member may include a Teflon layer.

In order to prevent induction heating of the heating plate by a high frequency current flowing through the antenna, an electromagnetic shielding layer provided on an upper surface of the heating plate may be further included.

The electromagnetic shielding layer may include ferrite.

The window support frame may support six windows of the same size arranged in a 2x3 arrangement.

The antenna includes a central antenna, a middle antenna disposed to surround the central antenna, and an outer antenna disposed to surround the middle antenna, and the central antenna is disposed on two middle windows located at the center of the six windows. can be placed in

The middle antenna and the outer antenna may be disposed on the six windows.

Other specific details of the invention are included in the detailed description and drawings.

According to embodiments of the present invention, at least the following effects are obtained.

It is possible to reduce a phenomenon in which by-products are attached to the window without significantly affecting the induced electric field for plasma generation.

Effects according to the present invention are not limited by the contents exemplified above, and more various effects are included in the present specification.

1 is a schematic diagram of a substrate processing apparatus according to an embodiment of the present invention.
2 is a plan view illustrating an intenna, a window, and a window support frame according to an embodiment of the present invention.
3 is a schematic cross-sectional view taken along line AA of FIG. 2 .
4 is a diagram illustrating an H-field of plasma generated in a state in which a heating plate is removed in a substrate processing apparatus according to an embodiment of the present invention.
5 is a diagram illustrating an H-field of plasma generated in a state in which a heating plate is operated in a substrate processing apparatus according to an embodiment of the present invention.

Advantages and features of the present invention, and methods of achieving them, will become clear with reference to the detailed description of the following embodiments taken in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but may be implemented in various different forms, and only these embodiments make the disclosure of the present invention complete, and common knowledge in the art to which the present invention belongs. It is provided to completely inform the person who has the scope of the invention, and the present invention is only defined by the scope of the claims. Like reference numbers designate like elements throughout the specification.

In addition, the embodiments described in this specification will be described with reference to cross-sectional views and/or schematic views, which are ideal exemplary views of the present invention. Accordingly, the shape of the illustrative drawings may be modified due to manufacturing techniques and/or tolerances. In addition, in each drawing shown in the present invention, each component may be shown somewhat enlarged or reduced in consideration of convenience of description. Like reference numbers designate like elements throughout the specification.

Hereinafter, the present invention will be described with reference to drawings for explaining a substrate processing apparatus according to an embodiment of the present invention.

1 is a schematic diagram of a substrate processing apparatus according to an embodiment of the present invention.

Referring to FIG. 1 , a substrate processing apparatus 1 according to an embodiment of the present invention includes a chamber 10, a stage 30, window support frames 51 and 52, windows 61, 62 and 63, and an antenna. (40). The substrate processing apparatus 1 may be a device that processes a 5.5G substrate (for example, a substrate having a size of 1300 mm x 1500 mm) to a 6G substrate (a substrate having a size of 1500 mm x 1850 mm).

The chamber 10 has a sealed structure in which a space in which the stage 30, the window support frames 51 and 52, the windows 61, 62 and 63, and the antenna 40 are installed is formed. The chamber 10 may be made of aluminum having an anodized inner wall.

As shown in FIG. 1 , the stage 30 is located in the lower part of the chamber 10 . The stage 30 is configured to support the substrate S carried into the chamber 10, and may be electrically connected to a high frequency power source (not shown) for bias so that plasma ions are attracted to the substrate S. The high frequency power supply for bias can apply high frequency power of 6 MHz to the stage.

A temperature control mechanism such as a heater and/or a refrigerant passage may be installed in the stage 30 to control the temperature of the substrate S being processed. The substrate S is seated on the upper surface of the stage 30 and an electrostatic chuck (not shown) may be installed to fix the substrate S during the process.

Meanwhile, window support frames 51 and 52 and windows 61 , 62 and 63 are installed on the inside of the chamber 10 . The window support frames 51 and 52 and the windows 61 , 62 and 63 may divide the space inside the chamber 10 vertically. Based on the windows 61, 62, and 63, the lower space inside the chamber 10 becomes the processing space A, and the upper space inside the chamber 10 becomes the antenna accommodating space B.

Accordingly, the windows 61, 62, and 63 may be the floor of the antenna accommodating space B and the ceiling of the processing space A at the same time. As shown in FIG. 1 , a stage 30 is installed in the processing space A, and an antenna 40 is installed in the antenna accommodating space B.

An exhaust hole 20 is formed at one side of the processing space A to exhaust air, gas, etc. inside the processing space A to the outside. The exhaust hole 20 may be formed through the chamber 10 and connected to a vacuum pump (not shown) provided outside the chamber 10 . By the operation of the vacuum pump, the inside of the processing space A may be formed in a vacuum atmosphere.

In addition, on the other side of the processing space A, a gate 11 through which the substrate S enters and exits is formed through the chamber 10 . A gate valve 12 is provided to open and close the gate 11 so that the gate 11 can be closed during the process and open only when the substrate S comes in and out. The gate valve 12 may be configured to seal the gate 11 when the inside of the processing space A is evacuated so that the inside of the processing space A can be maintained in a vacuum atmosphere.

The windows 61, 62, and 63 may be made of a dielectric such as ceramic or quartz, or may be made of a conductor such as aluminum or an aluminum alloy.

The windows 61 , 62 , and 63 may be installed to be supported by the window support frames 51 and 52 . To this end, the window support frames 51 and 52 include support protrusions 53 protruding toward the windows 61, 62, and 63, and each window 61, 62, and 63 has an edge on the support protrusion 53. It is seated and supported by the window support frames 51 and 52.

The antenna 40 is installed on top of the windows 61, 62 and 63.

The antenna 40 receives high frequency power from a high frequency power source (not shown). The high frequency power supply may supply high frequency power of 13.56 MHz to the antenna structure. When the high-frequency power supplied from the high-frequency power supply is applied to the antenna 40, an induction electric field is generated in the processing space A, and the processing gas supplied to the processing space A is converted into plasma by the induction electric field, and the processing space A ) in which plasma is generated. Although not shown in FIG. 1 , a gas flow path and a shower head may be installed in the chamber 10 to transfer processing gas supplied from the outside to the processing space.

2 is a plan view illustrating an intenna, a window, and a window support frame according to an embodiment of the present invention, FIG. 3 is a schematic cross-sectional view taken along line A-A of FIG. 2, and FIG. 4 is an intenna according to an embodiment of the present invention. It is a plan view showing

Referring to FIG. 2 , a window support frame 50 is formed to support six rectangular windows 61, 62, 63, 64, 65, and 66 of the same size arranged in a 2x3 arrangement.

The windows 61, 62, 63, 64, 65, and 66 are arranged side by side on both sides along the direction in which the processing target substrate S enters the processing space A through the gate 11. can

Short sides of the rectangular windows 61 , 62 , 63 , 64 , 65 , and 66 may be disposed parallel to a direction in which the processing target substrate S enters the processing space A through the gate 11 .

The window support frame 50 includes an outer frame 51 and an inner frame 52 .

The outer frame 51 forms a circumference of the window support frame 50 and is in contact with or supported on the inner surface of the chamber 10 .

The inner frame 52 extends from the outer frame 51 to support six rectangular windows 61, 62, 63, 64, 65, and 66, and forms six lattice spaces together with the outer frame 51. form

Referring to FIG. 3 , the outer frame 51 and the inner frame 52 include support protrusions 53 protruding toward the windows 61 and 64 .

A sealing member 54 and a damping member 55 may be provided on the supporting jaw 53 .

The sealing member 54 is provided between the supporting jaw 53 and the windows 61 to 66 to improve the sealing force of the processing space A and/or the antenna accommodating space B. In the process of processing the processing target substrate S, the processing space A is depressurized into a vacuum atmosphere, and the sealing member 54 is installed between the window support frame 50 and the windows 61 to 66 in the processing space A. Ensure a vacuum is maintained.

The damping member 55 is provided between the supporting jaw 53 and the windows 61 to 66 to provide thermal damping and physical damping between the supporting jaw 53 and the windows 61 to 66 .

In the process of processing the target substrate S, the processing space A becomes a high-temperature environment, and in this process, the window support frame 50 is also heated to a high temperature. The damping member 55 blocks heat conduction and provides thermal damping so that the heat of the supporting jaw 53 is not directly transferred to the windows 61 to 66 .

In addition, the processing space A is depressurized to a vacuum atmosphere in the process of processing the substrate S to be processed, and the pressure is raised from the vacuum atmosphere to the atmospheric pressure atmosphere to take the processed substrate S out of the substrate processing apparatus 1. do. As the pressure in the processing space A changes, the force/pressure applied by the windows 61 to 66 and the supporting jaw 53 to each other changes. The damping member 55 provides physical damping between the windows 61 to 66 and the support protrusion 53 so that the windows 61 to 66 and the support protrusion 53 that change according to the pressure change in the processing space A They provide physical damping that absorbs some of the force/pressure they press against each other.

In addition, since the windows 61 to 66 and the window support frame 50 are made of different materials, the degrees of thermal expansion of the windows 61 to 66 and the window support frame 50 vary as the temperature in the processing space A changes. However, the damping member 55 reduces the frictional force between the windows 61 to 66 and the support jaw 53, so that even if the relative thermal expansion of the windows 61 to 66 and the window support frame 50 occurs, the windows 61 to 66 ) provides physical damping that allows sliding against the support jaw 53.

For the above-described thermal damping and physical damping effects of the damping member 55, the damping member 55 may include a Teflon layer.

Meanwhile, referring to FIGS. 2 and 3 , a heating plate 70 for heating the windows 61 to 66 is provided on the upper surface of each window 61 to 66 .

By-products generated during the plasma treatment tend to adhere to the windows 61 to 66 having a relatively low temperature in the processing space A. The heating plate 70 raises the temperature of the windows 61 to 66 to prevent or minimize by-products from being attached to the windows 61 to 66 .

The heating plate 70 is annularly disposed along the edges of the windows 61 to 66 .

The heating plate 70 is formed to have a width overlapping with the supporting jaw 53 supporting each of the windows 61 to 66 . That is, the inner side of the heating plate 70 does not protrude toward the inner side of the windows 61 to 66 than the outermost end of the supporting jaw 53 .

The heating plate 70 receives power and heats the windows 61 to 66 , and electromagnetic force generated from the heating plate 70 may affect plasma generated in the processing space A.

Accordingly, in the substrate processing apparatus 1 according to the present embodiment, the heating plate 70 overlaps the supporting jaw 53 so that the electromagnetic force generated from the heating plate 70 is blocked by the supporting jaw 53, thereby reducing the processing space. (A) Minimize the effect on the plasma generated within. To this end, the window support frame 50 including the support jaw 53 may be formed of a metallic material that absorbs electromagnetic force.

Meanwhile, an electromagnetic shielding layer 71 may be formed on an upper surface of the heating plate 70 .

The electromagnetic shielding layer 71 prevents the heating plate 70 from being inductively heated by the high frequency current flowing through the antenna 40 . To this end, the electromagnetic shielding layer 71 may include ferrite.

Meanwhile, referring to FIG. 2 , the antenna 40 includes a central antenna 41 , a middle antenna 42 , and outer antennas 43 and 44 .

The central antenna 41 is located above two middle windows 62 and 65 located in the center among the six windows 61 to 66.

The middle antenna 42 is arranged to surround the center antenna 41 .

The middle antenna 42 is located above the six windows 61 to 66.

The outer antennas 43 and 44 are arranged to surround the middle antenna 42 .

The outer antennas 43 and 44 are located above the six windows 61 to 66.

The outer antennas 43 and 44 include four outer edge antennas 43 and four outer corner antennas 44 . Four outer edge antennas 43 and four outer corner antennas 44 are alternately arranged so that the outer antennas 43 and 44 are formed in an annular shape.

Referring to FIG. 2, four outer corner antennas 44 are placed on four corner windows 61, 63, 64, and 66 excluding the middle windows 62 and 65 among the six windows 61 to 66, respectively. are placed

4 is a diagram showing an H-field of plasma generated in a state in which a heating plate is removed in a substrate processing apparatus according to an embodiment of the present invention, and FIG. 5 is a diagram showing heating in a substrate processing apparatus according to an embodiment of the present invention. It is a diagram showing the H-Field of the plasma generated with the plate operating.

Comparing FIGS. 4 and 5 , it can be seen that even when the heating plate 70 is operating, plasma in a state almost similar to the plasma generated when the heating plate 70 is not present is generated in the processing space A. . This means that the electromagnetic field generated by the heating plate 70 hardly affects the plasma in the processing space A.

Those skilled in the art to which the present invention pertains will understand that the present invention can be embodied in other specific forms without changing its technical spirit or essential features. Therefore, the embodiments described above should be understood as illustrative in all respects and not limiting. The scope of the present invention is indicated by the following claims rather than the detailed description above, and all changes or modifications derived from the meaning and scope of the claims and equivalent concepts should be construed as being included in the scope of the present invention. do.

1: substrate processing device 10: chamber
20: exhaust hole 30: stage
40: antenna 41: central antenna
42: middle antenna 43: outer edge antenna
44: outer corner antenna 50: window support frame
51: outer frame 52: inner frame
61 to 66: window A: processing space
B: antenna accommodating space S: substrate

Claims (10)

a chamber including a processing space accommodating a substrate to be processed and an antenna accommodating space accommodating an antenna arranged to face the substrate to be processed;
a plurality of windows provided in the chamber to partition the processing space and the antenna accommodating space;
a window support frame supporting the plurality of windows;
a heating plate provided on an upper surface of the plurality of windows to heat the plurality of windows; and
and an electromagnetic shielding layer provided on an upper surface of the heating plate to prevent the heating plate from being inductively heated by a high frequency current flowing through the antenna. According to claim 1,
The window support frame includes a support protrusion protruding toward the window to support the window,
The heating plate is provided to overlap the support jaw, the substrate processing apparatus. According to claim 2,
The heating plate is disposed in an annular shape along an edge of the window. According to claim 2,
Further comprising a damping member provided between the support jaw and the window, the substrate processing apparatus. According to claim 4,
The damping member provides thermal damping and physical damping between the support jaw and the window. According to claim 5,
Wherein the damping member comprises a Teflon layer. According to claim 1,
The substrate processing apparatus of claim 1, wherein the electromagnetic shielding layer includes ferrite. According to claim 1,
The window support frame supports six windows of the same size arranged in a 2x3 arrangement. According to claim 8,
The antenna includes a central antenna, a middle antenna disposed to surround the central antenna, and an outer antenna disposed to surround the middle antenna,
The central antenna is disposed on two middle windows located in the center of the six windows, the substrate processing apparatus. According to claim 9,
The middle antenna and the outer antenna are disposed on the six windows.

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