WO2018220731A1 - Processing device - Google Patents

Processing device Download PDF

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Publication number
WO2018220731A1
WO2018220731A1 PCT/JP2017/020169 JP2017020169W WO2018220731A1 WO 2018220731 A1 WO2018220731 A1 WO 2018220731A1 JP 2017020169 W JP2017020169 W JP 2017020169W WO 2018220731 A1 WO2018220731 A1 WO 2018220731A1
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WO
WIPO (PCT)
Prior art keywords
chamber
stage
substrate
processing chamber
processing
Prior art date
Application number
PCT/JP2017/020169
Other languages
French (fr)
Japanese (ja)
Inventor
川邉　丈晴
本多　祐二
健 木島
哲平 鈴木
Original Assignee
アドバンストマテリアルテクノロジーズ株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by アドバンストマテリアルテクノロジーズ株式会社 filed Critical アドバンストマテリアルテクノロジーズ株式会社
Priority to PCT/JP2017/020169 priority Critical patent/WO2018220731A1/en
Priority to JP2019521584A priority patent/JPWO2018220731A1/en
Publication of WO2018220731A1 publication Critical patent/WO2018220731A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations

Definitions

  • the present invention relates to a processing apparatus.
  • FIG. 9 is a plan view schematically showing a conventional processing apparatus.
  • the processing apparatus includes a load lock chamber 101, a transfer chamber 102, a transfer robot 103, a YSZ sputtering chamber 104, a sputtering chamber 105 of a substance having magnetism, a sputtering chamber 106 of a substance having a specific lattice constant, and a PZT.
  • a sputter chamber 107 is a plan view schematically showing a conventional processing apparatus.
  • the processing apparatus includes a load lock chamber 101, a transfer chamber 102, a transfer robot 103, a YSZ sputtering chamber 104, a sputtering chamber 105 of a substance having magnetism, a sputtering chamber 106 of a substance having a specific lattice constant, and a PZT.
  • a vacuum pump (not shown) is connected to the load lock chamber 101, and a Si substrate (for example, a Si wafer) to be subjected to film formation is introduced into the load lock chamber 101. It is designed to be evacuated.
  • the transfer chamber 102 is connected to the load lock chamber 101 via a gate valve 151.
  • a transfer robot 103 is disposed in the transfer chamber 102.
  • a vacuum pump (not shown) is connected to the transfer chamber 102, and the inside of the transfer chamber 102 is evacuated by the vacuum pump.
  • the YSZ sputtering chamber 104 is for forming a YSZ film on a Si wafer (also referred to as a Si substrate) 123 by reactive sputtering, and is connected to the transfer chamber 102 via a gate valve 151.
  • the YSZ sputtering chamber 104 has a first chamber, and the processing apparatus has a first sputtering apparatus (not shown) having a first chamber.
  • the Si wafer 123 is transferred from the load lock chamber 101 through the transfer chamber 102 to the first chamber of the YSZ sputtering chamber 104 by the transfer robot 103.
  • the sputtering chamber 105 of magnetic material is for depositing a conductive film containing a magnetic material on the Si wafer 123 by sputtering, and is connected to the transfer chamber 102 via a gate valve 151.
  • the sputtering chamber 105 has a second sputtering apparatus (not shown) having a second chamber.
  • the transfer robot 103 transfers the Si wafer 123 from the first chamber of the YSZ sputtering 10 chamber 4 to the second chamber of the sputtering chamber 105 through the transfer chamber 102.
  • the sputter chamber 106 of a material having a specific lattice constant is for forming a conductive film containing a material having a specific lattice constant on the Si wafer 123 by sputtering, and is connected to the transfer chamber 102 via a gate valve 151.
  • the sputtering chamber 106 has a third sputtering apparatus (not shown) having a third chamber.
  • the Si wafer 123 is transferred from the second chamber of the sputtering chamber 105 through the transfer chamber 102 to the third chamber of the sputtering chamber 106 by the transfer robot 103.
  • the PZT sputtering chamber 107 is for depositing a PZT film on the Si wafer 123 by sputtering, and is connected to the transfer chamber 102 via a gate valve 151.
  • the PZT sputtering chamber 107 has a fourth sputtering apparatus (not shown) having a fourth chamber.
  • the Si wafer 123 is transferred from the third chamber of the sputtering chamber 106 to the fourth chamber of the sputtering chamber 107 by the transfer robot 103 (see, for example, Patent Document 1).
  • a plurality of processing chambers are arranged around one transfer chamber 102 having one transfer robot 103. Therefore, when the number of processing chambers increases, the transfer robot 103 transfers the Si substrate to the processing chamber. Waiting time when transporting from the process chamber to the processing chamber increases. As a result, there arises a problem that the throughput is lowered. Further, in the above-described conventional processing apparatus, when the number of processing chambers is increased, the mutual interval between the processing chambers is narrowed, and there is a problem that maintenance in the processing chambers becomes difficult.
  • An object of one embodiment of the present invention is to provide a processing apparatus that can reduce waiting time when a transfer robot transfers a substrate from a processing chamber to a processing chamber even when the number of processing chambers increases.
  • a first delivery room A first stage disposed in the first delivery chamber and holding a substrate; A first transfer chamber connected to the first delivery chamber via a first gate valve; A first transfer robot disposed in the first transfer chamber; A first processing chamber connected to the first transfer chamber via a second gate valve; A second stage disposed in the first processing chamber and holding the substrate; A second processing chamber connected to the first transfer chamber via a third gate valve; A third stage disposed in the second processing chamber and holding the substrate; A second delivery chamber connected to the first transfer chamber via a first opening; A fourth stage disposed in the second delivery chamber and holding the substrate; A second transfer chamber connected to the second delivery chamber via a second opening; A second transfer robot disposed in the second transfer chamber; A third processing chamber connected to the second transfer chamber via a fourth gate valve; A fifth stage disposed in the third processing chamber and holding the substrate; A fourth processing chamber connected to the second transfer chamber via a fifth gate valve; A sixth stage disposed in the fourth processing chamber and holding the substrate;
  • a processing apparatus comprising:
  • a processing apparatus comprising a heater for heating the substrate disposed in at least one of the first delivery chamber, the second delivery chamber, and the third delivery chamber.
  • the processing apparatus wherein the first processing chamber is a processing chamber for forming a film by vapor deposition on the substrate held by the second stage.
  • the distance between the first processing chamber and the third processing chamber is 500 mm or less
  • the distance between the third processing chamber and the fifth processing chamber is 500 mm or less
  • the distance between the second processing chamber and the fourth processing chamber is 500 mm or less
  • the processing apparatus characterized in that a distance between the fourth processing chamber and the sixth processing chamber is 500 mm or less.
  • a processing apparatus comprising:
  • the film formed in the first processing chamber is a Zr film;
  • the gas introduced into the third processing chamber is oxygen;
  • the fifth processing chamber has a mechanism for inverting the substrate held on the eighth stage,
  • the sixth processing chamber is a processing chamber for forming a Pt film on the substrate held on the ninth stage by sputtering, A heater for heating the substrate disposed in the third delivery chamber;
  • the fourth processing chamber is a processing chamber for forming an SRO film on the substrate held on the sixth stage by sputtering,
  • the processing apparatus is characterized in that the second processing chamber is a processing chamber for forming a PZT film on the substrate held by the third stage by sputtering.
  • a Zr film is formed on the substrate held on the second stage in the first processing chamber, By irradiating the Zr film with the lamp light in a pressurized oxygen atmosphere in the third processing chamber, a part of the Zr film is oxidized to form a stacked film of the Zr film and the ZrO 2 film.
  • a processing device By irradiating the Zr film with the lamp light in a pressurized oxygen atmosphere in the third processing chamber, a part of the Zr film is oxidized to form a stacked film of the Zr film and the ZrO 2 film.
  • a processing apparatus wherein a fifth opening is formed in the third transfer chamber, and the fifth opening is closed by a lid.
  • the fifth opening is for connecting a fourth delivery chamber and further adding a processing chamber. Thereby, a process chamber can be easily increased as needed.
  • a third processing chamber [10] a third processing chamber; A fifth stage disposed in the third processing chamber and holding a substrate on which a Zr film is formed; A gas introduction mechanism for introducing pressurized oxygen gas into the third processing chamber; A gas exhaust mechanism for exhausting the gas in the third processing chamber; A lamp heater for irradiating the substrate held on the fifth stage with lamp light; Comprising A processing apparatus, wherein the Zr film is irradiated with the lamp light in a pressurized oxygen atmosphere to oxidize a part of the Zr film to form a laminated film of a Zr film and a ZrO 2 film.
  • FIG. 5 is a cross-sectional view taken along line AA ′ shown in FIG.
  • FIG. 5 is a cross-sectional view taken along the line BB ′ shown in FIG.
  • FIG. 5 is a cross-sectional view taken along the line BB ′ shown in FIG.
  • FIG. 5 is a cross-sectional view taken along the line BB ′ shown in FIG.
  • FIG. 5 is a cross-sectional view taken along the line BB ′ shown in FIG.
  • FIG. 1 is a plan view schematically showing a processing apparatus according to one aspect of the present invention.
  • This processing apparatus has an atmospheric transfer system 211, and this atmospheric transfer system 211 is connected to the first delivery chamber 231 through a gate valve 221.
  • a first stage 241 that holds the substrate 251 is disposed in the first delivery chamber 231.
  • the first delivery chamber 231 is connected to the first transfer chamber 261 via the first gate valve 222, and the first vacuum transfer robot 261a is disposed in the first transfer chamber 261.
  • the first transfer chamber 261 is connected to the first processing chamber 212 via a second gate valve 223, and a second stage 242 that holds the substrate 251 is disposed in the first processing chamber 212. ing.
  • the first transfer chamber 261 is connected to the second processing chamber 213 via a third gate valve 224, and a third stage 243 that holds the substrate 251 is disposed in the second processing chamber 213. ing.
  • the first transfer chamber 261 is connected to the second delivery chamber 232 via the first opening 271, and a fourth stage 244 that holds the substrate 251 is disposed in the second delivery chamber 232. Yes.
  • the second delivery chamber 232 is connected to the second transfer chamber 262 through the second opening 272, and the second vacuum transfer robot 262a is disposed in the second transfer chamber 262.
  • the second transfer chamber 262 is connected to the third processing chamber 214 via the fourth gate valve 225, and a fifth stage 245 that holds the substrate 251 is disposed in the third processing chamber 214. Yes.
  • the second transfer chamber 262 is connected to the fourth processing chamber 215 via the fifth gate valve 226, and a sixth stage 246 that holds the substrate 251 is disposed in the fourth processing chamber 215. ing.
  • the second transfer chamber 262 is connected to the third delivery chamber 233 via the third opening 273, and a seventh stage 247 that holds the substrate 251 is disposed in the third delivery chamber 233.
  • the fourth processing chamber 215 is preferably a processing chamber in which a SrRuO 3 film (also referred to as an SRO film) is formed by sputtering on the substrate 251 held by the sixth stage 246.
  • the third delivery chamber 233 is connected to the third transfer chamber 263 through the fourth opening 274, and the third transfer robot 263a is disposed in the third transfer chamber 263.
  • the third transfer chamber 263 is connected to the fifth processing chamber 216 via a sixth gate valve 227, and an eighth stage 248 that holds the substrate 251 is disposed in the fifth processing chamber 216.
  • the fifth treatment chamber 216 preferably includes a mechanism for inverting the substrate 251 held on the eighth stage 248.
  • the third transfer chamber 263 is connected to the sixth processing chamber 217 via a seventh gate valve 228, and a ninth stage 249 that holds the substrate 251 is disposed in the sixth processing chamber 217. ing.
  • the sixth processing chamber 217 is preferably a processing chamber in which a Pt film is formed on the substrate 251 held by the ninth stage 249 by sputtering.
  • the first transfer robot 261a transfers the substrate 251 between the first stage 241 and the second stage 242 through the first gate valve 222, the first transfer chamber 261, and the second gate valve 223. A function of transporting the substrate 251 between the second stage 242 and the fourth stage 244 through the second gate valve 223, the first transport chamber 261, and the first opening 271. Having a function of transporting the substrate 251 between the fourth stage 244 and the third stage 243 through the first opening 271, the first transport chamber 261 and the third gate valve 224, The substrate 251 is transferred between the third stage 243 and the first stage 241 through the third gate valve 224, the first transfer chamber 261, and the first gate valve 222.
  • the second transfer robot 262a transfers the substrate 251 between the fourth stage 244 and the fifth stage 245 through the second opening 272, the second transfer chamber 262, and the fourth gate valve 225. And has a function of transporting the substrate 251 between the fifth stage 245 and the seventh stage 247 through the fourth gate valve 225, the second transport chamber 262, and the third opening 273. And has a function of transporting the substrate 251 between the seventh stage 247 and the sixth stage 246 through the third opening 273, the second transport chamber 262, and the fifth gate valve 226, and 5 has a function of transporting the substrate between the sixth stage 246 and the fourth stage 244 through the gate valve 226, the second transport chamber 262, and the second opening 272.
  • the third transfer robot 263a transfers the substrate 251 between the seventh stage 247 and the eighth stage 248 through the fourth opening 274, the third transfer chamber 263, and the sixth gate valve 227.
  • the atmospheric transfer system 211 has a chamber 211b having a door 211a, and a cassette (not shown) for holding a plurality of substrates is disposed in the chamber 211b.
  • the atmospheric transfer system has a function of transferring the substrate held in the cassette to the first stage 241 in the first delivery chamber 231 through the gate valve 221.
  • the distance 200 between the first processing chamber 212 and the third processing chamber 214 is 500 mm or less, and the distance between the third processing chamber 214 and the fifth processing chamber 216 is 500 mm or less.
  • the distance between the second processing chamber 213 and the fourth processing chamber 215 is 500 mm or less, and the distance between the fourth processing chamber 215 and the sixth processing chamber 217 is 500 mm or less. In this way, the footprint can be reduced.
  • the first to third delivery chambers 231 to 233, the first to third transfer chambers 261 to 263, and the first to sixth processing chambers 212 to 217 are each connected to a vacuum exhaust mechanism (not shown).
  • the waiting time when the transfer robot transfers the substrate from the processing chamber to the processing chamber can be reduced as compared with the processing apparatus shown in FIG. As a result, a decrease in throughput can be suppressed.
  • the third transfer chamber 263 is formed with a fifth opening 275 located on the side opposite to the fourth opening 274, and the fifth opening 275 is closed by a lid (not shown). Good.
  • a transfer chamber similar to the third transfer chamber 233, a transfer chamber similar to the third transfer chamber 263, and the first to second It is easy to add processing chambers similar to the six processing chambers 212 to 217 as shown in FIG.
  • the inside of the additional processing chamber does not need to be exactly the same as the first to sixth processing chambers 212 to 217, and can be appropriately changed to an appropriate one.
  • FIG. 2 is a cross-sectional view schematically showing the internal structure of the third delivery chamber 233 shown in FIG.
  • the third delivery chamber 233 includes a chamber 233a, and a third opening 273 and a fourth opening 274 are formed in the chamber 233a.
  • a twelfth stage 247a is disposed under the seventh stage 247 in the chamber 233a.
  • the seventh stage 247 and the twelfth stage 247a are moved as shown by an arrow 247b by a vertical movement mechanism (not shown). It is configured to be movable up and down.
  • the third delivery chamber 233 includes a lamp heater 201 that heats the substrate 251 held on the seventh stage 247 and a lamp heater 202 that heats the substrate 251a held on the twelfth stage 247a. Yes.
  • the transfer arm 262b of the second transfer robot 262a moves as indicated by an arrow 262c to transfer the substrate 251a onto the twelfth stage 247a through the third opening 273, or to transfer the substrate 251a to the twelfth stage.
  • the stage 247a can be transported to another stage.
  • the transfer arm 263b of the third transfer robot 263a moves as indicated by an arrow 263c to transfer the substrate 251 onto the seventh stage 247 through the fourth opening 274, or to transfer the substrate 251. It can be conveyed from the seventh stage 247 to another stage.
  • each of the first delivery chamber 231 and the second delivery chamber 232 may be the same as that of the third delivery chamber 233.
  • the internal structure of each of the first to third delivery chambers 231 to 233 can be appropriately changed from the structure shown in FIG. 2, for example, the stage may be one stage instead of two stages,
  • the lamp heaters 201 and 202 may be only one, or the lamp heater may be omitted.
  • the first to third delivery chambers 231 to 233 include two stages as shown in FIG. 2, for example, the first processing chamber 212, the third processing chamber 214, the fifth processing chamber 216.
  • the waiting time for transfer due to the fact that the stage of the delivery chamber is not empty is set. Can be almost eliminated. That is, even when a plurality of substrates are processed at the same time using the processing chamber without waste, it is possible to almost eliminate the waiting time for transport due to the absence of the stage in the delivery chamber. Accordingly, the processing time of the substrate can be reduced.
  • a fourth delivery chamber connected to the third transfer chamber 263 through the fifth opening 275 is provided, and a tenth stage for holding the substrate 251 is disposed in the fourth delivery chamber. Good.
  • the fourth delivery chamber is useful for reducing the waiting time for conveyance due to the absence of the delivery chamber stage.
  • the internal structure of the fourth delivery chamber may be the same as the structure shown in FIG.
  • FIG. 3 is a cross-sectional view schematically showing the details of the structure of the first processing chamber 212 shown in FIG. 1, in which an epitaxial film is formed by depositing a Zr film on the substrate 251 held on the second stage 242. It is a vapor deposition device.
  • a second stage 242 that holds the substrate 251 is disposed in the chamber 301, and the substrate 251 is transported through the second gate valve 223.
  • a halogen lamp heater 302 is disposed on the substrate 251, and the substrate 251 is heated by the halogen lamp heater 302.
  • the halogen lamp heater 302 is configured to be rotated as indicated by an arrow by a motor M, and a heater power source and a temperature controller 303 are connected to the halogen lamp heater 302.
  • a rotary sensor type film thickness monitor 304 is disposed in the vicinity of the substrate 251, and the film thickness monitor 304 includes a four-crystal switching unit 305.
  • a deposition source 307 including an EB gun 306 is disposed below the substrate 251, and a shutter 308 is disposed between the deposition source 307 and the substrate 251.
  • the shutter is configured to be opened and closed by a drive unit 309.
  • a gas introduction mechanism that introduces Ar gas into the chamber 301 is attached to the chamber 301. Note that a gas introduction mechanism for introducing O 2 gas into the chamber 301 may also be attached to the chamber 301.
  • the first processing chamber 212 has a door 310 for the operator 311 to maintain the inside of the chamber 301 as shown in FIG.
  • the deposition apparatus provided with the large door 310 for maintenance is preferably disposed in the first processing chamber 212. This is because the door 310 cannot secure a sufficient space for the operator 311 to work at an interval of 500 mm.
  • FIG. 4 is a cross-sectional view schematically showing the internal structure of the third processing chamber 214 shown in FIG. 1, and is a pressure type having a lamp heater for irradiating the substrate 251 held by the fifth stage 245 with lamp light. This is a lamp annealing device.
  • FIG. 5 is a cross-sectional view taken along the line AA ′ shown in FIG.
  • FIG. 6 is a cross-sectional view taken along the line BB ′ shown in FIG.
  • the pressure-type lamp annealing apparatus has an Al chamber 21, and a third processing chamber 214 is formed inside the chamber 21.
  • a surface treatment is applied to the inner surface 21 a of the chamber 21. That is, a reflective film is formed on the inner surface 21 a of the chamber 21.
  • Au plating treatment or oxalic acid alumite treatment can be used. Thereby, an Au plating film or an oxalate alumite film is formed on the inner surface 21a of the chamber 21, and the lamp light can be reflected by the Au plating film or the oxalate alumite film. As a result, the temperature increase rate can be increased. In addition, power consumption can be reduced.
  • the chamber 21 is configured to be water cooled by a cooling mechanism (not shown).
  • Au plating treatment or oxalic acid alumite treatment is used as the surface treatment, but the present invention is not limited to this, and is made of Al, Au, Ag, Cu, Pt, Ti. It is also possible to use a coating film whose main component is one metal selected from the group.
  • a fifth stage 245 for holding a wafer as a substrate 251 is provided in the chamber 21.
  • the fifth stage 245 is made of a material that transmits lamp light, for example, quartz.
  • a plurality of transparent tubes 20 are arranged below the fifth stage 245, and these transparent tubes 20 are made of a material that transmits lamp light, for example, quartz.
  • a lamp heater 19 is disposed inside each of the plurality of transparent tubes 20.
  • a groove 18 is formed in the upper inner wall 21 b of the chamber 21, and the inner wall of the groove 18 has a curved surface along the outer surface of the transparent tube 20.
  • the transparent tube 20 can be disposed in the groove 18 with its outer surface in contact with the curved surface of the inner wall of the groove 18.
  • the lamp light of the lamp heater 19 is applied to the substrate 251 held on the fifth stage 245 through the transparent tube 20.
  • one end 20 a of the transparent tube 20 is connected to the inside of a metal first housing 26 a located outside the chamber 21, and the other end 20 b of the transparent tube 20 is It is connected to the inside of the second housing 26b made of metal located outside the chamber 21.
  • An exhaust duct (not shown) is connected to the first casing 26a, and this exhaust duct exhausts heat inside each of the first casing 26a, the transparent tube 20, and the second casing 26b. Is.
  • White O-rings 28 are arranged between the chambers 21 and both ends 20a, 20b of the transparent tube 20. These O-rings 28 maintain the airtightness in the third processing chamber 214.
  • the reason why the white O-ring 28 is used is that, for example, if a black O-ring is used, the O-ring is melted by the lamp light from the lamp heater 19, but if the white O-ring is used, the O-ring is melted by the lamp light. This is because it can be suppressed.
  • a window is provided above the chamber 21 located above the fifth stage 245, and calcium fluoride 8 is disposed in this window.
  • a radiation thermometer 9 is disposed above the calcium fluoride 8. In order to measure the temperature of the substrate with the radiation thermometer 9, the calcium fluoride 8 is arranged to take in light in the wavelength region to be measured (infrared light having a wavelength of 5 ⁇ m).
  • the third processing chamber 214 formed in the chamber 21 is preferably narrow. This is because the time required to pressurize or depressurize to a predetermined pressure can be shortened. Further, the height in the third treatment chamber 214 is preferably low. The reason is that the distance between the substrate 251 and the lamp heater 19 disposed in the third processing chamber 214 can be shortened, thereby increasing the temperature rising rate.
  • the third processing chamber 214 in the chamber 21 is connected to the pressurization line (pressurization mechanism) 12.
  • the pressurization line 12 has a pressurization line using argon gas, a pressurization line using oxygen gas, and a pressurization line using nitrogen gas.
  • the argon gas pressurization line includes an argon gas supply source 13, and this argon gas supply source 13 is connected to a check valve 14 through a pipe, and the check valve 14 removes impurities through the pipe.
  • the filter 17 is connected to a valve 50 through a pipe, and this pipe is connected to a pressure gauge 47.
  • the valve 50 is connected to a regulator 53 via a pipe, and the regulator 53 is connected to the mass flow controller 31 via a pipe.
  • the regulator 53 sets the differential pressure between the upstream side and the downstream side of the mass flow controller 31 to a predetermined pressure by gradually increasing the gas pressure.
  • the mass flow controller 31 is connected to a valve 34 via a pipe, and this valve 34 is connected to a heating unit 37 via a pipe.
  • the heating unit 37 makes the gas temperature constant (for example, about 40 to 50 ° C.) in order to stabilize the process.
  • the heating unit 37 is connected to a third processing chamber 214 in the chamber 21 through a pipe
  • the pressurization line using oxygen gas is configured in the same manner as the pressurization line using argon gas.
  • the pressurization line by oxygen gas is provided with the oxygen gas supply source 29, and this oxygen gas supply source 29 is connected to the check valve 15 via piping, and this check valve 15 is connected via piping. It is connected to a filter 30 for removing impurities.
  • the filter 30 is connected to the valve 24 via a pipe, and this pipe is connected to a pressure gauge 48.
  • the valve 24 is connected to a regulator 27 via piping, and this regulator 27 is connected to the mass flow controller 32 via piping.
  • the mass flow controller 32 is connected to a valve 35 via a pipe, and this valve 35 is connected to a heating unit 37 via a pipe.
  • the heating unit 37 is connected to a third processing chamber 214 in the chamber 21 through a pipe 51.
  • the pressurization line with nitrogen gas has the same configuration as the pressurization line with argon gas.
  • the pressurization line by nitrogen gas is provided with the nitrogen gas supply source 38, and this nitrogen gas supply source 38 is connected to the check valve 16 via piping, and this check valve 16 is connected via piping. It is connected to a filter 46a for removing impurities.
  • the filter 46 a is connected to a valve 53 a via a pipe, and this pipe is connected to a pressure gauge 49.
  • the valve 53a is connected to a regulator 54 via a pipe, and this regulator 54 is connected to the mass flow controller 33 via a pipe.
  • the mass flow controller 33 is connected to a valve 36 via a pipe, and this valve 36 is connected to a heating unit 37 via a pipe.
  • the heating unit 37 is connected to a third processing chamber 214 in the chamber 21 through a pipe 51.
  • the third processing chamber 214 in the chamber 21 is connected to a pressure adjustment line.
  • the third processing chamber 214 in the chamber 21 can be pressurized to a predetermined pressure (for example, less than 1 MPa) by the pressure adjustment line and the pressure line 12.
  • the pressure adjustment line includes a variable valve 39, and one side of the variable valve 39 is connected to a third processing chamber 214 in the chamber 21 through a pipe 52.
  • the pipe 52 is connected to the pressure gauge 40, and the pressure gauge 40 can measure the pressure in the third processing chamber 214.
  • the other side of the variable valve 39 is connected to piping.
  • the third processing chamber 214 in the chamber 21 is connected to a safety line.
  • This safety line is for lowering the inside of the processing chamber to the atmospheric pressure when the inside of the third processing chamber 214 is excessively pressurized and exceeds a certain pressure.
  • the safety line is provided with an open valve 41.
  • One side of the open valve 41 is connected to the third processing chamber 214 in the chamber 21 via the pipe 52, and the other side of the open valve 41 is connected to the pipe.
  • the release valve 41 is configured to allow gas to flow when a certain pressure is applied.
  • the third processing chamber 214 in the chamber 21 is connected to the air release line.
  • This atmospheric release line returns the inside of the third processing chamber 214 that has been normally pressurized to atmospheric pressure.
  • the atmosphere opening line is provided with an opening valve 42.
  • One side of the release valve 42 is connected to the third processing chamber 214 in the chamber 21 via the pipe 52, and the other side of the release valve 42 is connected to the pipe.
  • the release valve 42 gradually allows the gas in the third processing chamber 214 to flow in order to return the inside of the third processing chamber 214 to atmospheric pressure.
  • the third processing chamber 214 in the chamber 21 is connected to a line for returning from the reduced pressure state to the atmospheric pressure.
  • This line is used to return from the reduced pressure state to the atmospheric pressure when the inside of the third processing chamber 214 is in a reduced pressure state (vacuum state).
  • the line includes a leak valve 43.
  • One side of the leak valve 43 is connected to a third processing chamber 214 in the chamber 21 via a pipe 52, and the other side of the leak valve 43 is connected to a check valve 44 via a pipe.
  • the check valve 44 is connected to a nitrogen gas supply source 45 through a pipe. In other words, the line returns the processing chamber to atmospheric pressure by gradually introducing nitrogen gas from the nitrogen gas supply source 45 into the third processing chamber 214 via the check valve 44 and the leak valve 43. ing.
  • the third processing chamber 214 in the chamber 21 is connected to a vacuum exhaust line for reducing the pressure in the third processing chamber 214.
  • the evacuation line has a valve 69, and one end of the valve 69 is connected to the third processing chamber 214 via a pipe. The other end of the valve 69 is connected to the vacuum pump 70 via a pipe.
  • This evacuation line is used, for example, when performing pressurized RTA in a reduced pressure atmosphere.
  • the lamp heaters 19 in the first and second casings 26a and 26b and the transparent tube 20 are each connected to a dry air supply source (not shown) or a nitrogen gas supply source (not shown) via a pipe. .
  • a dry air supply source not shown
  • a nitrogen gas supply source not shown
  • the lamp heater 19 is cooled, and the casing and transparent Heat accumulated in the tube 20 can be exhausted from the exhaust duct.
  • Argon gas, oxygen gas and nitrogen gas introduced from the pressurization line 12 are supplied onto the substrate 251 while being dispersed in a shower shape in a direction substantially parallel to the surface of the substrate 251.
  • the gas supplied onto the wafer is exhausted from a second shower-like gas passage (not shown) arranged in a direction substantially parallel to the surface of the substrate 251.
  • the pipe 51 is connected to a first shower-like gas passage (not shown), and the pipe 52 is connected to a second shower-like gas passage.
  • the first and second shower-like gas passages are formed in the chamber 21. In this manner, the gas can be supplied to the substrate 251 with good uniformity by flowing while dispersing the gas in a shower and exhausting through the second shower-like gas passage.
  • a gate valve (not shown) is arranged on one side of the chamber 21, and a transfer robot (not shown) for transferring a wafer is arranged near the gate valve.
  • a cassette (not shown) for storing wafers is disposed in the vicinity of the transfer robot.
  • the pressure-type lamp annealing apparatus can perform a pressure annealing process on the substrate 251.
  • the pressure annealing process will be described.
  • the inside of the third treatment chamber 214 of the chamber is a pressurized atmosphere.
  • oxygen gas is supplied from the oxygen gas supply source 29 of the pressurization line 12 through the check valve 15, the filter 30, the valve 24, the regulator 27, the mass flow controller 32, the valve 35, the heating unit 37, and the pipe 51. It is introduced into the processing chamber 214.
  • by gradually closing the variable valve 39 of the pressure adjustment line the inside of the third processing chamber 214 is gradually pressurized while maintaining an oxygen atmosphere.
  • the inside of the third processing chamber 214 is pressurized to a predetermined pressure of less than 1 MPa and is maintained at that pressure.
  • the substrate 251 is annealed in a pressurized oxygen atmosphere by irradiating the substrate 251 with lamp light from the lamp heater 19 through the transparent tube 20.
  • FIG. 7 is a cross-sectional view schematically showing details of the structure of the second processing chamber 213 shown in FIG. 1, and Pb (Zr, Ti) O 3 is sputtered onto the substrate 251 held on the third stage 243.
  • a sputtering apparatus forms a film (also referred to as a PZT film).
  • a third stage 243 that holds the substrate 251 is disposed in the chamber 401, and the substrate 251 is transported through the third gate valve 224.
  • a halogen lamp heater 402 is disposed under the substrate 251, and the substrate 251 is heated by the halogen lamp heater 402.
  • a heater power supply and temperature controller 403 is connected to the halogen lamp heater 402.
  • the sputtering apparatus includes a radiation thermometer 410 that measures the temperature of the substrate 251.
  • a rotary magnet cathode is disposed above the substrate 251, and the rotary magnet cathode has a sputtering target 411.
  • Pulsed RF (high frequency) 412 is supplied to the sputtering target 411 through the matching box MB.
  • a shutter 408 is disposed between the sputtering target 411 and the substrate 251. The shutter 408 is configured to be opened and closed by a drive unit 409.
  • a gas introduction mechanism for introducing Ar gas into the chamber 401 is attached to the chamber 301.
  • a gas introduction mechanism for introducing O 2 gas into the chamber 401 is attached to the chamber 401.
  • a Si substrate is used as the substrate.
  • a Si natural oxide film 501 is formed on the Si substrate 251 by several nm.
  • the Si substrate 251 in the atmospheric transfer system 211 shown in FIG. 1 is transferred to the first delivery chamber 231 by opening the gate valve 221, and held on the first stage 241 in the first delivery chamber 231. Then, the gate valve 221 is closed. Next, the inside of the first delivery chamber 231 is evacuated. The insides of the first to third transfer chambers 261 to 263, the second delivery chamber 232, and the third delivery chamber 233 are also evacuated.
  • first gate valve 222 and the second gate valve 223 are opened, and the substrate 251 on the first stage 241 in the first delivery chamber 231 is moved into the first processing chamber 212 by the first transfer robot 261a.
  • the second stage 242 is conveyed.
  • the first and second gate valves 222 and 223 are closed.
  • a Zr film having a thickness of 37.5 nm is formed on the natural oxide film 501 by a deposition apparatus of the deposition type shown in FIG.
  • the film formation time at this time is 12.5 minutes.
  • the total of the film formation time and the time for transporting the substrate is about 30 minutes.
  • the second gate valve 223 and the fourth gate valve 225 are opened, and the substrate 251 on the second stage 242 in the first processing chamber 212 is moved into the second delivery chamber 232 by the first transfer robot 261a.
  • the fourth stage 244 is conveyed.
  • the substrate 251 on the fourth stage 244 in the second delivery chamber 232 is transferred to the fifth stage 245 in the third processing chamber 214 by the second transfer robot 262a.
  • the second and fourth gate valves 223 and 225 are closed.
  • a part of the Zr film is oxidized, and the Zr film And a ZrO 2 film are formed.
  • a Zr film 502 having a thickness of about 3 nm is formed on the natural oxide film 501, and a ZrO 2 film 503 having a thickness of about 47 nm is formed on the Zr film 502.
  • the total time for substrate transport and pressure lamp annealing is about 11 minutes. Therefore, the total time for forming the ZrO 2 film 503 is about 41 minutes.
  • the processing time becomes remarkably long. End up. Specifically, when the ZrO 2 film 503 is formed by the vapor deposition apparatus shown in FIG. 3, an O 2 gas is introduced into the chamber, and ZrO 2 is synthesized while producing a Zr vapor deposition product on the Zr film 502. Therefore, the deposition rate of the ZrO 2 film is lowered, and as a result, the processing time is lengthened. Accordingly, the total time for forming the ZrO 2 film is about 60 minutes, which is about 19 minutes longer than when the pressure type lamp annealing apparatus is used.
  • the fourth gate valve 225 and the sixth gate valve 227 are opened, and the substrate 251 on the fifth stage 245 in the third processing chamber 214 is transferred to the third delivery chamber 233 by the second transfer robot 262a. It is conveyed onto the seventh stage 247 in the inside. Next, the substrate 251 on the seventh stage 247 in the third delivery chamber 233 is transferred to the eighth stage 248 in the fifth processing chamber 216 by the third transfer robot 263a. Then, the fourth and sixth gate valves 225 and 227 are closed.
  • the substrate 251 held on the eighth stage 248 is inverted in the fifth processing chamber 216.
  • the sixth gate valve 227 and the seventh gate valve 228 are opened, and the substrate 251 on the eighth stage 248 in the fifth processing chamber 216 is transferred to the third delivery chamber 233 by the third transfer robot 263a. It is conveyed onto the seventh stage 247 in the inside. Next, the substrate 251 on the seventh stage 247 in the third delivery chamber 233 is transferred to the ninth stage 249 in the sixth processing chamber 217 by the third transfer robot 263a. Then, the sixth and seventh gate valves 227 and 228 are closed. Note that in this embodiment mode, the substrate 251 is once transferred to the seventh stage 247 and then transferred to the ninth stage 249 as described above, but another substrate is processed in the sixth processing chamber 217. Is completed and the sixth processing chamber 217 is empty, the substrate 251 may be directly transferred from the eighth stage 248 to the ninth stage 249.
  • a Pt film 504 is formed to a thickness of 150 nm on the ZrO 2 film 503 by using a deposition down type DC sputtering apparatus in the sixth processing chamber 217.
  • the film forming temperature at this time is about 650 ° C.
  • the seventh gate valve 228 is opened, and the substrate 251 on the ninth stage 249 in the sixth processing chamber 217 is transferred to the seventh stage 247 in the third delivery chamber 233 by the third transfer robot 263a. Carry up. Then, the seventh gate valve 228 is closed.
  • heat treatment is performed at a temperature of about 450 ° C. by the lamp heater 201 shown in FIG. 2 in the third delivery chamber 233.
  • the fifth gate valve 226 is opened, and the substrate 251 on the seventh stage 247 in the third delivery chamber 233 is transferred to the sixth stage 246 in the fourth processing chamber 215 by the second transfer robot 262a. Carry up. Then, the fifth gate valve 226 is closed.
  • an SrRuO 3 film (SRO film) 505 is formed to a thickness of about 7 nm on the Pt film 504 by a deposition down type RF sputtering apparatus in the fourth processing chamber 215.
  • the third gate valve 224 and the fifth gate valve 226 are opened, and the substrate 251 on the sixth stage 246 in the fourth processing chamber 215 is transferred to the second delivery chamber 232 by the second transfer robot 262a. It is conveyed onto the fourth stage 244 in the inside. Next, the substrate 251 on the fourth stage 244 in the second delivery chamber 232 is transferred to the third stage 243 in the second processing chamber 213 by the first transfer robot 261a. Then, the third and fifth gate valves 224 and 226 are closed.
  • a PZT film 506 is formed to a thickness of 1000 nm on the SRO film 505 by the deposition down type sputtering apparatus shown in FIG. 7 in the second treatment chamber 213.
  • Each of the first to ninth stages 241 to 249 is not limited to a table-like stage as long as it has a mechanism for holding a substrate, and various stages can be used. For example, it may be held on a pin as shown in FIG.

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Abstract

[Problem] To provide a processing device that is able to reduce the waiting time period when a conveyance robot conveys a substrate from a processing chamber to another processing chamber, even if the number of processing chambers is increased. [Solution] One aspect of the present invention is a processing device provided with: a first delivery chamber 231; a first stage 241 that holds a substrate; a first conveyance chamber 261 that is connected to the first delivery chamber via a first gate valve 222; a first conveyance robot 261a; a first processing chamber 212 that is connected to the first conveyance chamber via a second gate valve 223; a second stage 242 that holds a substrate; a second processing chamber 213 that is connected to the first conveyance chamber via a third gate valve 224; a third stage 243 that holds a substrate; a second delivery chamber 232 that is connected to the first conveyance chamber via a first opening 271; and a fourth stage 244 that holds a substrate.

Description

処理装置Processing equipment
　本発明は、処理装置に関する。 The present invention relates to a processing apparatus.
　図９は、従来の処理装置を模式的に示す平面図である。
　処理装置は、ロードロック室１０１と、搬送室１０２と、搬送ロボット１０３と、ＹＳＺスパッタ室１０４と、磁性を持つ物質のスパッタ室１０５と、特定の格子定数を持つ物質のスパッタ室１０６と、ＰＺＴスパッタ室１０７とを有している。 FIG. 9 is a plan view schematically showing a conventional processing apparatus.
The processing apparatus includes a load lock chamber 101, a transfer chamber 102, a transfer robot 103, a YSZ sputtering chamber 104, a sputtering chamber 105 of a substance having magnetism, a sputtering chamber 106 of a substance having a specific lattice constant, and a PZT. A sputter chamber 107.
　ロードロック室１０１には真空ポンプ（図示せず）が接続されており、成膜処理を施すＳｉ基板（例えばＳｉウエハ）をロードロック室１０１内に導入し、真空ポンプによってロードロック室１０１内が真空排気されるようになっている。 A vacuum pump (not shown) is connected to the load lock chamber 101, and a Si substrate (for example, a Si wafer) to be subjected to film formation is introduced into the load lock chamber 101. It is designed to be evacuated.
　搬送室１０２は、ゲートバルブ１５１を介してロードロック室１０１に接続されている。搬送室１０２内には搬送ロボット１０３が配置されている。搬送室１０２には真空ポンプ（図示せず）が接続されており、その真空ポンプによって搬送室１０２内が真空排気されるようになっている。 The transfer chamber 102 is connected to the load lock chamber 101 via a gate valve 151. A transfer robot 103 is disposed in the transfer chamber 102. A vacuum pump (not shown) is connected to the transfer chamber 102, and the inside of the transfer chamber 102 is evacuated by the vacuum pump.
　ＹＳＺスパッタ室１０４は、Ｓｉウエハ（Ｓｉ基板ともいう）１２３上にＹＳＺ膜を反応性スパッタリングによって成膜するものであり、ゲートバルブ１５１を介して搬送室１０２に接続されている。ＹＳＺスパッタ室１０４は第１のチャンバーを有しており、処理装置は第１のチャンバーを有する第１のスパッタリング装置（図示せず）を有している。搬送ロボット１０３によってＳｉウエハ１２３をロードロック室１０１内から搬送室１０２を通ってＹＳＺスパッタ室１０４の第１のチャンバーに搬送するようになっている。 The YSZ sputtering chamber 104 is for forming a YSZ film on a Si wafer (also referred to as a Si substrate) 123 by reactive sputtering, and is connected to the transfer chamber 102 via a gate valve 151. The YSZ sputtering chamber 104 has a first chamber, and the processing apparatus has a first sputtering apparatus (not shown) having a first chamber. The Si wafer 123 is transferred from the load lock chamber 101 through the transfer chamber 102 to the first chamber of the YSZ sputtering chamber 104 by the transfer robot 103.
　磁性を持つ物質のスパッタ室１０５は、Ｓｉウエハ１２３上に磁性を持つ物質を含む導電膜をスパッタリングによって成膜するものであり、ゲートバルブ１５１を介して搬送室１０２に接続されている。スパッタ室１０５は、第２のチャンバーを有する第２のスパッタリング装置（図示せず）を有している。搬送ロボット１０３によってＳｉウエハ１２３をＹＳＺスパッタ１０室４の第１のチャンバー内から搬送室１０２を通ってスパッタ室１０５の第２のチャンバー内に搬送するようになっている。 The sputtering chamber 105 of magnetic material is for depositing a conductive film containing a magnetic material on the Si wafer 123 by sputtering, and is connected to the transfer chamber 102 via a gate valve 151. The sputtering chamber 105 has a second sputtering apparatus (not shown) having a second chamber. The transfer robot 103 transfers the Si wafer 123 from the first chamber of the YSZ sputtering 10 chamber 4 to the second chamber of the sputtering chamber 105 through the transfer chamber 102.
　特定の格子定数を持つ物質のスパッタ室１０６は、Ｓｉウエハ１２３上に特定の格子定数を持つ物質を含む導電膜をスパッタリングによって成膜するものであり、ゲートバルブ１５１を介して搬送室１０２に接続されている。スパッタ室１０６は、第３のチャンバーを有する第３のスパッタリング装置（図示せず）を有している。搬送ロボット１０３によってＳｉウエハ１２３をスパッタ室１０５の第２のチャンバー内から搬送室１０２を通ってスパッタ室１０６の第３のチャンバー内に搬送するようになっている。 The sputter chamber 106 of a material having a specific lattice constant is for forming a conductive film containing a material having a specific lattice constant on the Si wafer 123 by sputtering, and is connected to the transfer chamber 102 via a gate valve 151. Has been. The sputtering chamber 106 has a third sputtering apparatus (not shown) having a third chamber. The Si wafer 123 is transferred from the second chamber of the sputtering chamber 105 through the transfer chamber 102 to the third chamber of the sputtering chamber 106 by the transfer robot 103.
　ＰＺＴスパッタ室１０７は、Ｓｉウエハ１２３上にＰＺＴ膜をスパッタリングによって成膜するものであり、ゲートバルブ１５１を介して搬送室１０２に接続されている。ＰＺＴスパッタ室１０７は、第４のチャンバーを有する第４のスパッタリング装置（図示せず）を有している。搬送ロボット１０３によってＳｉウエハ１２３をスパッタ室１０６の第３のチャンバー内から搬送室１０２を通ってスパッタ室１０７の第４のチャンバー内に搬送するようになっている（例えば特許文献１参照）。 The PZT sputtering chamber 107 is for depositing a PZT film on the Si wafer 123 by sputtering, and is connected to the transfer chamber 102 via a gate valve 151. The PZT sputtering chamber 107 has a fourth sputtering apparatus (not shown) having a fourth chamber. The Si wafer 123 is transferred from the third chamber of the sputtering chamber 106 to the fourth chamber of the sputtering chamber 107 by the transfer robot 103 (see, for example, Patent Document 1).
　上記従来の処理装置では、一つの搬送ロボット１０３を有する一つの搬送室１０２の周囲に複数の処理室を配置しているため、処理室の数が増えると、搬送ロボット１０３がＳｉ基板を処理室から処理室へ搬送する際の待ち時間が増加する。その結果、スループットが低下するという問題が生じる。また、上記従来の処理装置では、処理室の数が増えると処理室の相互間隔が狭くなり、処理室内のメンテナンスが困難になるという問題が発生する。 In the conventional processing apparatus, a plurality of processing chambers are arranged around one transfer chamber 102 having one transfer robot 103. Therefore, when the number of processing chambers increases, the transfer robot 103 transfers the Si substrate to the processing chamber. Waiting time when transporting from the process chamber to the processing chamber increases. As a result, there arises a problem that the throughput is lowered. Further, in the above-described conventional processing apparatus, when the number of processing chambers is increased, the mutual interval between the processing chambers is narrowed, and there is a problem that maintenance in the processing chambers becomes difficult.
特開２０１４－１７０７８４号公報JP 2014-170784 A
　本発明の一態様は、処理室の数が増えても搬送ロボットが基板を処理室から処理室へ搬送する際の待ち時間を少なくできる処理装置を提供することを課題とする。 An object of one embodiment of the present invention is to provide a processing apparatus that can reduce waiting time when a transfer robot transfers a substrate from a processing chamber to a processing chamber even when the number of processing chambers increases.
　以下に、本発明の種々の態様について説明する。
［１］第１の受渡室と、
　前記第１の受渡室内に配置され、基板を保持する第１のステージと、
　前記第１の受渡室に第１のゲートバルブを介して接続された第１の搬送室と、
　前記第１の搬送室内に配置された第１の搬送ロボットと、
　前記第１の搬送室に第２のゲートバルブを介して接続された第１の処理室と、
　前記第１の処理室内に配置され、前記基板を保持する第２のステージと、
　前記第１の搬送室に第３のゲートバルブを介して接続された第２の処理室と、
　前記第２の処理室内に配置され、前記基板を保持する第３のステージと、
　前記第１の搬送室に第１の開口を介して接続された第２の受渡室と、
　前記第２の受渡室内に配置され、前記基板を保持する第４のステージと、
　前記第２の受渡室に第２の開口を介して接続された第２の搬送室と、
　前記第２の搬送室内に配置された第２の搬送ロボットと、
　前記第２の搬送室に第４のゲートバルブを介して接続された第３の処理室と、
　前記第３の処理室内に配置され、前記基板を保持する第５のステージと、
　前記第２の搬送室に第５のゲートバルブを介して接続された第４の処理室と、
　前記第４の処理室内に配置され、前記基板を保持する第６のステージと、
　前記第２の搬送室に第３の開口を介して接続された第３の受渡室と、
　前記第３の受渡室内に配置され、前記基板を保持する第７のステージと、
　前記第３の受渡室に第４の開口を介して接続された第３の搬送室と、
　前記第３の搬送室内に配置された第３の搬送ロボットと、
　前記第３の搬送室に第６のゲートバルブを介して接続された第５の処理室と、
　前記第５の処理室内に配置され、前記基板を保持する第８のステージと、
　前記第３の搬送室に第７のゲートバルブを介して接続された第６の処理室と、
　前記第６の処理室内に配置され、前記基板を保持する第９のステージと、
を具備し、
　前記第１の搬送ロボットは、前記第１のステージと前記第２のステージの間、前記第２のステージと前記第４のステージの間、前記第４のステージと前記第３のステージの間、前記第３のステージと前記第１のステージの間で前記基板を搬送する機能を有し、
　前記第２の搬送ロボットは、前記第４のステージと前記第５のステージの間、前記第５のステージと前記第７のステージの間、前記第７のステージと前記第６のステージの間、前記第６のステージと前記第４のステージの間で前記基板を搬送する機能を有し、
　前記第３の搬送ロボットは、前記第７のステージと前記第８のステージの間、前記第８のステージと前記第９のステージの間、前記第９のステージと前記第７のステージの間で前記基板を搬送する機能を有することを特徴とする処理装置。 Hereinafter, various aspects of the present invention will be described.
[1] a first delivery room;
A first stage disposed in the first delivery chamber and holding a substrate;
A first transfer chamber connected to the first delivery chamber via a first gate valve;
A first transfer robot disposed in the first transfer chamber;
A first processing chamber connected to the first transfer chamber via a second gate valve;
A second stage disposed in the first processing chamber and holding the substrate;
A second processing chamber connected to the first transfer chamber via a third gate valve;
A third stage disposed in the second processing chamber and holding the substrate;
A second delivery chamber connected to the first transfer chamber via a first opening;
A fourth stage disposed in the second delivery chamber and holding the substrate;
A second transfer chamber connected to the second delivery chamber via a second opening;
A second transfer robot disposed in the second transfer chamber;
A third processing chamber connected to the second transfer chamber via a fourth gate valve;
A fifth stage disposed in the third processing chamber and holding the substrate;
A fourth processing chamber connected to the second transfer chamber via a fifth gate valve;
A sixth stage disposed in the fourth processing chamber and holding the substrate;
A third delivery chamber connected to the second transfer chamber via a third opening;
A seventh stage disposed in the third delivery chamber and holding the substrate;
A third transfer chamber connected to the third delivery chamber via a fourth opening;
A third transfer robot disposed in the third transfer chamber;
A fifth processing chamber connected to the third transfer chamber via a sixth gate valve;
An eighth stage disposed in the fifth processing chamber and holding the substrate;
A sixth treatment chamber connected to the third transfer chamber via a seventh gate valve;
A ninth stage disposed in the sixth processing chamber and holding the substrate;
Comprising
The first transfer robot is between the first stage and the second stage, between the second stage and the fourth stage, between the fourth stage and the third stage, Having a function of transporting the substrate between the third stage and the first stage;
The second transfer robot is between the fourth stage and the fifth stage, between the fifth stage and the seventh stage, between the seventh stage and the sixth stage, Having a function of transporting the substrate between the sixth stage and the fourth stage;
The third transfer robot is provided between the seventh stage and the eighth stage, between the eighth stage and the ninth stage, and between the ninth stage and the seventh stage. A processing apparatus having a function of transporting the substrate.
［２］上記［１］において、
　前記第１の受渡室内に配置され、前記基板を保持する第１０のステージと、
　前記第２の受渡室内に配置され、前記基板を保持する第１１のステージと、
　前記第３の受渡室内に配置され、前記基板を保持する第１２のステージと、
を有することを特徴とする処理装置。 [2] In the above [1],
A tenth stage disposed in the first delivery chamber and holding the substrate;
An eleventh stage disposed in the second delivery chamber and holding the substrate;
A twelfth stage disposed in the third delivery chamber and holding the substrate;
A processing apparatus comprising:
［３］上記［１］または［２］において、
　前記第１の受渡室、前記第２の受渡室及び前記第３の受渡室の少なくとも一つに配置された前記基板を加熱するヒータを有することを特徴とする処理装置。 [3] In the above [1] or [2],
A processing apparatus comprising a heater for heating the substrate disposed in at least one of the first delivery chamber, the second delivery chamber, and the third delivery chamber.
［４］上記［１］乃至［３］のいずれか一項において、
　前記第１の処理室は、前記第２のステージに保持された前記基板に蒸着法により膜を成膜する処理室であることを特徴とする処理装置。 [4] In any one of [1] to [3] above,
The processing apparatus, wherein the first processing chamber is a processing chamber for forming a film by vapor deposition on the substrate held by the second stage.
［５］上記［４］において、
　前記第１の処理室と前記第３の処理室の間の距離は５００ｍｍ以下であり、
　前記第３の処理室と前記第５の処理室の間の距離は５００ｍｍ以下であり、
　前記第２の処理室と前記第４の処理室の間の距離は５００ｍｍ以下であり、
　前記第４の処理室と前記第６の処理室の間の距離は５００ｍｍ以下であることを特徴とする処理装置。 [5] In the above [4],
The distance between the first processing chamber and the third processing chamber is 500 mm or less,
The distance between the third processing chamber and the fifth processing chamber is 500 mm or less,
The distance between the second processing chamber and the fourth processing chamber is 500 mm or less,
The processing apparatus characterized in that a distance between the fourth processing chamber and the sixth processing chamber is 500 mm or less.
［６］上記［４］または［５］において、
　前記第３の処理室内に加圧されたガスを導入するガス導入機構と、
　前記第３の処理室内のガスを排気するガス排気機構と、
　前記第５のステージに保持された前記基板にランプ光を照射するランプヒータと、
を具備することを特徴とする処理装置。 [6] In the above [4] or [5],
A gas introduction mechanism for introducing pressurized gas into the third processing chamber;
A gas exhaust mechanism for exhausting the gas in the third processing chamber;
A lamp heater for irradiating the substrate held on the fifth stage with lamp light;
A processing apparatus comprising:
［７］上記［６］において、
　前記第１の処理室で成膜される前記膜はＺｒ膜であり、
　前記第３の処理室内に導入される前記ガスは酸素であり、
　前記第５の処理室は、前記第８のステージに保持された前記基板を反転させる機構を有し、
　前記第６の処理室は、前記第９のステージに保持された前記基板にスパッタリングによりＰｔ膜を成膜する処理室であり、
　前記第３の受渡室に配置された前記基板を加熱するヒータを有し、
　前記第４の処理室は、前記第６のステージに保持された前記基板にスパッタリングによりＳＲＯ膜を成膜する処理室であり、
　前記第２の処理室は、前記第３のステージに保持された前記基板にスパッタリングによりＰＺＴ膜を成膜する処理室であることを特徴とする処理装置。 [7] In the above [6],
The film formed in the first processing chamber is a Zr film;
The gas introduced into the third processing chamber is oxygen;
The fifth processing chamber has a mechanism for inverting the substrate held on the eighth stage,
The sixth processing chamber is a processing chamber for forming a Pt film on the substrate held on the ninth stage by sputtering,
A heater for heating the substrate disposed in the third delivery chamber;
The fourth processing chamber is a processing chamber for forming an SRO film on the substrate held on the sixth stage by sputtering,
The processing apparatus is characterized in that the second processing chamber is a processing chamber for forming a PZT film on the substrate held by the third stage by sputtering.
［８］上記［７］において、
　前記第１の処理室内で前記第２のステージに保持された前記基板上にＺｒ膜が成膜され、
　前記第３の処理室内で加圧酸素雰囲気により前記Ｚｒ膜に前記ランプ光を照射することで、前記Ｚｒ膜の一部を酸化させ、Ｚｒ膜とＺｒＯ２膜の積層膜を形成することを特徴とする処理装置。 [8] In the above [7],
A Zr film is formed on the substrate held on the second stage in the first processing chamber,
By irradiating the Zr film with the lamp light in a pressurized oxygen atmosphere in the third processing chamber, a part of the Zr film is oxidized to form a stacked film of the Zr film and the ZrO 2 film. A processing device.
［９］上記［１］乃至［８］のいずれか一項において、
　前記第３の搬送室には第５の開口が形成され、前記第５の開口が蓋により塞がれていることを特徴とする処理装置。
　なお、第５の開口は、第４の受渡室を接続して処理室をさらに増設させるためのものである。これにより、必要に応じて処理室を簡単に増やすことができる。 [9] In any one of [1] to [8] above,
A processing apparatus, wherein a fifth opening is formed in the third transfer chamber, and the fifth opening is closed by a lid.
The fifth opening is for connecting a fourth delivery chamber and further adding a processing chamber. Thereby, a process chamber can be easily increased as needed.
［１０］第３の処理室と、
　前記第３の処理室内に配置され、Ｚｒ膜が成膜された基板を保持する第５のステージと、
　前記第３の処理室内に加圧された酸素ガスを導入するガス導入機構と、
　前記第３の処理室内のガスを排気するガス排気機構と、
　前記第５のステージに保持された前記基板にランプ光を照射するランプヒータと、
を具備し、
　加圧酸素雰囲気で前記Ｚｒ膜に前記ランプ光を照射することで、前記Ｚｒ膜の一部を酸化させ、Ｚｒ膜とＺｒＯ２膜の積層膜を形成することを特徴とする処理装置。 [10] a third processing chamber;
A fifth stage disposed in the third processing chamber and holding a substrate on which a Zr film is formed;
A gas introduction mechanism for introducing pressurized oxygen gas into the third processing chamber;
A gas exhaust mechanism for exhausting the gas in the third processing chamber;
A lamp heater for irradiating the substrate held on the fifth stage with lamp light;
Comprising
A processing apparatus, wherein the Zr film is irradiated with the lamp light in a pressurized oxygen atmosphere to oxidize a part of the Zr film to form a laminated film of a Zr film and a ZrO 2 film.
　本発明の一態様によれば、処理室の数が増えても搬送ロボットが基板を処理室から処理室へ搬送する際の待ち時間を少なくできる処理装置を提供することができる。 According to one embodiment of the present invention, it is possible to provide a processing apparatus that can reduce the waiting time when the transfer robot transfers a substrate from the processing chamber to the processing chamber even when the number of processing chambers increases.
本発明の一態様に係る処理装置を模式的に示す平面図である。It is a top view which shows typically the processing apparatus which concerns on 1 aspect of this invention. 図１に示す第３の受渡室２３３の内部構造を模式的に示す断面図である。It is sectional drawing which shows typically the internal structure of the 3rd delivery chamber 233 shown in FIG. 図１に示す第１の処理室２１２の内部構造を模式的に示す断面図である。It is sectional drawing which shows typically the internal structure of the 1st process chamber 212 shown in FIG. 図１に示す第３の処理室２１４の内部構造を模式的に示す断面図である。It is sectional drawing which shows typically the internal structure of the 3rd process chamber 214 shown in FIG. 図４に示すＡ－Ａ'部の断面図である。FIG. 5 is a cross-sectional view taken along line AA ′ shown in FIG. 図４に示すＢ－Ｂ'部の断面図である。FIG. 5 is a cross-sectional view taken along the line BB ′ shown in FIG. 図１に示す第２の処理室２１３の内部構造を模式的に示す断面図である。It is sectional drawing which shows typically the internal structure of the 2nd process chamber 213 shown in FIG. 図１の処理装置を用いてＳｉ基板上に膜を成膜した膜構造を示す断面図である。It is sectional drawing which shows the film | membrane structure which formed the film | membrane on Si substrate using the processing apparatus of FIG. 従来の処理装置を模式的に示す平面図である。It is a top view which shows the conventional processing apparatus typically.
　以下では、本発明の実施形態及び実施例について図面を用いて詳細に説明する。ただし、本発明は以下の説明に限定されず、本発明の趣旨及びその範囲から逸脱することなくその形態及び詳細を様々に変更し得ることは、当業者であれば容易に理解される。従って、本発明は以下に示す実施形態の記載内容及び実施例に限定して解釈されるものではない。 Hereinafter, embodiments and examples of the present invention will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it will be easily understood by those skilled in the art that modes and details can be variously changed without departing from the spirit and scope of the present invention. Therefore, the present invention should not be construed as being limited to the description of the embodiments and examples below.
　図１は、本発明の一態様に係る処理装置を模式的に示す平面図である。この処理装置は大気搬送システム２１１を有し、この大気搬送システム２１１はゲートバルブ２２１を介して第１の受渡室２３１に接続されている。第１の受渡室２３１内には基板２５１を保持する第１のステージ２４１が配置されている。 FIG. 1 is a plan view schematically showing a processing apparatus according to one aspect of the present invention. This processing apparatus has an atmospheric transfer system 211, and this atmospheric transfer system 211 is connected to the first delivery chamber 231 through a gate valve 221. A first stage 241 that holds the substrate 251 is disposed in the first delivery chamber 231.
　第１の受渡室２３１は第１のゲートバルブ２２２を介して第１の搬送室２６１に接続されており、第１の搬送室２６１内には第１の真空搬送ロボット２６１ａが配置されている。第１の搬送室２６１は第２のゲートバルブ２２３を介して第１の処理室２１２に接続されており、第１の処理室２１２内には基板２５１を保持する第２のステージ２４２が配置されている。 The first delivery chamber 231 is connected to the first transfer chamber 261 via the first gate valve 222, and the first vacuum transfer robot 261a is disposed in the first transfer chamber 261. The first transfer chamber 261 is connected to the first processing chamber 212 via a second gate valve 223, and a second stage 242 that holds the substrate 251 is disposed in the first processing chamber 212. ing.
　第１の搬送室２６１は第３のゲートバルブ２２４を介して第２の処理室２１３に接続されており、第２の処理室２１３内には基板２５１を保持する第３のステージ２４３が配置されている。第１の搬送室２６１は第１の開口２７１を介して第２の受渡室２３２に接続されており、第２の受渡室２３２内には基板２５１を保持する第４のステージ２４４が配置されている。 The first transfer chamber 261 is connected to the second processing chamber 213 via a third gate valve 224, and a third stage 243 that holds the substrate 251 is disposed in the second processing chamber 213. ing. The first transfer chamber 261 is connected to the second delivery chamber 232 via the first opening 271, and a fourth stage 244 that holds the substrate 251 is disposed in the second delivery chamber 232. Yes.
　第２の受渡室２３２は第２の開口２７２を介して第２の搬送室２６２に接続されており、第２の搬送室２６２内には第２の真空搬送ロボット２６２ａが配置されている。第２の搬送室２６２は第４のゲートバルブ２２５を介して第３の処理室２１４に接続されており、第３の処理室２１４内には基板２５１を保持する第５のステージ２４５配置されている。 The second delivery chamber 232 is connected to the second transfer chamber 262 through the second opening 272, and the second vacuum transfer robot 262a is disposed in the second transfer chamber 262. The second transfer chamber 262 is connected to the third processing chamber 214 via the fourth gate valve 225, and a fifth stage 245 that holds the substrate 251 is disposed in the third processing chamber 214. Yes.
　第２の搬送室２６２は第５のゲートバルブ２２６を介して第４の処理室２１５に接続されており、第４の処理室２１５内には基板２５１を保持する第６のステージ２４６が配置されている。第２の搬送室２６２は第３の開口２７３を介して第３の受渡室２３３に接続されており、第３の受渡室２３３内には基板２５１を保持する第７のステージ２４７が配置されている。なお、第４の処理室２１５は、第６のステージ２４６に保持された基板２５１にスパッタリングによりＳｒＲｕＯ３膜（ＳＲＯ膜ともいう。）を成膜する処理室であるとよい。 The second transfer chamber 262 is connected to the fourth processing chamber 215 via the fifth gate valve 226, and a sixth stage 246 that holds the substrate 251 is disposed in the fourth processing chamber 215. ing. The second transfer chamber 262 is connected to the third delivery chamber 233 via the third opening 273, and a seventh stage 247 that holds the substrate 251 is disposed in the third delivery chamber 233. Yes. Note that the fourth processing chamber 215 is preferably a processing chamber in which a SrRuO 3 film (also referred to as an SRO film) is formed by sputtering on the substrate 251 held by the sixth stage 246.
　第３の受渡室２３３は第４の開口２７４を介して第３の搬送室２６３に接続されており、第３の搬送室２６３内には第３の搬送ロボット２６３ａが配置されている。第３の搬送室２６３は第６のゲートバルブ２２７を介して第５の処理室２１６に接続されており、第５の処理室２１６内には基板２５１を保持する第８のステージ２４８が配置されている。なお、第５の処理室２１６は、第８のステージ２４８上に保持された基板２５１を反転させる機構を有するとよい。 The third delivery chamber 233 is connected to the third transfer chamber 263 through the fourth opening 274, and the third transfer robot 263a is disposed in the third transfer chamber 263. The third transfer chamber 263 is connected to the fifth processing chamber 216 via a sixth gate valve 227, and an eighth stage 248 that holds the substrate 251 is disposed in the fifth processing chamber 216. ing. Note that the fifth treatment chamber 216 preferably includes a mechanism for inverting the substrate 251 held on the eighth stage 248.
　第３の搬送室２６３は第７のゲートバルブ２２８を介して第６の処理室２１７に接続されており、第６の処理室２１７内には基板２５１を保持する第９のステージ２４９が配置されている。なお、第６の処理室２１７は、第９のステージ２４９に保持された基板２５１にスパッタリングによりＰｔ膜を成膜する処理室であるとよい。 The third transfer chamber 263 is connected to the sixth processing chamber 217 via a seventh gate valve 228, and a ninth stage 249 that holds the substrate 251 is disposed in the sixth processing chamber 217. ing. Note that the sixth processing chamber 217 is preferably a processing chamber in which a Pt film is formed on the substrate 251 held by the ninth stage 249 by sputtering.
　第１の搬送ロボット２６１ａは、第１のゲートバルブ２２２、第１の搬送室２６１及び第２のゲートバルブ２２３を通って、第１のステージ２４１と第２のステージ２４２の間で基板２５１を搬送する機能を有し、第２のゲートバルブ２２３、第１の搬送室２６１及び第１の開口２７１を通って、第２のステージ２４２と第４のステージ２４４の間で基板２５１を搬送する機能を有し、第１の開口２７１、第１の搬送室２６１及び第３のゲートバルブ２２４を通って、第４のステージ２４４と第３のステージ２４３の間で基板２５１を搬送する機能を有し、第３のゲートバルブ２２４、第１の搬送室２６１及び第１のゲートバルブ２２２を通って、第３のステージ２４３と第１のステージ２４１の間で基板２５１を搬送する機能を有する。 The first transfer robot 261a transfers the substrate 251 between the first stage 241 and the second stage 242 through the first gate valve 222, the first transfer chamber 261, and the second gate valve 223. A function of transporting the substrate 251 between the second stage 242 and the fourth stage 244 through the second gate valve 223, the first transport chamber 261, and the first opening 271. Having a function of transporting the substrate 251 between the fourth stage 244 and the third stage 243 through the first opening 271, the first transport chamber 261 and the third gate valve 224, The substrate 251 is transferred between the third stage 243 and the first stage 241 through the third gate valve 224, the first transfer chamber 261, and the first gate valve 222.
　第２の搬送ロボット２６２ａは、第２の開口２７２、第２の搬送室２６２及び第４のゲートバルブ２２５を通って、第４のステージ２４４と第５のステージ２４５の間で基板２５１を搬送する機能を有し、第４のゲートバルブ２２５、第２の搬送室２６２及び第３の開口２７３を通って、第５のステージ２４５と第７のステージ２４７の間で基板２５１を搬送する機能を有し、第３の開口２７３、第２の搬送室２６２及び第５のゲートバルブ２２６を通って、第７のステージ２４７と第６のステージ２４６の間で基板２５１を搬送する機能を有し、第５のゲートバルブ２２６、第２の搬送室２６２及び第２の開口２７２を通って、第６のステージ２４６と第４のステージ２４４の間で基板を搬送する機能を有する。 The second transfer robot 262a transfers the substrate 251 between the fourth stage 244 and the fifth stage 245 through the second opening 272, the second transfer chamber 262, and the fourth gate valve 225. And has a function of transporting the substrate 251 between the fifth stage 245 and the seventh stage 247 through the fourth gate valve 225, the second transport chamber 262, and the third opening 273. And has a function of transporting the substrate 251 between the seventh stage 247 and the sixth stage 246 through the third opening 273, the second transport chamber 262, and the fifth gate valve 226, and 5 has a function of transporting the substrate between the sixth stage 246 and the fourth stage 244 through the gate valve 226, the second transport chamber 262, and the second opening 272.
　第３の搬送ロボット２６３ａは、第４の開口２７４、第３の搬送室２６３及び第６のゲートバルブ２２７を通って、第７のステージ２４７と第８のステージ２４８の間で基板２５１を搬送する機能を有し、第６のゲートバルブ２２７、第３の搬送室２６３及び第７のゲートバルブ２２８を通って、第８のステージ２４８と第９のステージ２４９の間で基板２５１を搬送する機能を有し、第７のゲートバルブ２２８、第３の搬送室２６３及び第４の開口２７４を通って、第９のステージ２４９と第７のステージ２４７の間で基板を搬送する機能を有する。 The third transfer robot 263a transfers the substrate 251 between the seventh stage 247 and the eighth stage 248 through the fourth opening 274, the third transfer chamber 263, and the sixth gate valve 227. A function of transporting the substrate 251 between the eighth stage 248 and the ninth stage 249 through the sixth gate valve 227, the third transport chamber 263, and the seventh gate valve 228. And has a function of transporting the substrate between the ninth stage 249 and the seventh stage 247 through the seventh gate valve 228, the third transport chamber 263, and the fourth opening 274.
　大気搬送システム２１１は扉２１１ａを備えたチャンバー２１１ｂを有し、このチャンバー２１１ｂ内には複数の基板を保持するカセット（図示せず）が配置されている。このカセットに保持された基板を、第１の受渡室２３１内の第１のステージ２４１にゲートバルブ２２１を通って搬送する機能を大気搬送システムは有している。 The atmospheric transfer system 211 has a chamber 211b having a door 211a, and a cassette (not shown) for holding a plurality of substrates is disposed in the chamber 211b. The atmospheric transfer system has a function of transferring the substrate held in the cassette to the first stage 241 in the first delivery chamber 231 through the gate valve 221.
　第１の処理室２１２と第３の処理室２１４の間の距離２００は５００ｍｍ以下であり、第３の処理室２１４と第５の処理室２１６の間の距離は５００ｍｍ以下である。第２の処理室２１３と第４の処理室２１５の間の距離は５００ｍｍ以下であり、記第４の処理室２１５と第６の処理室２１７の間の距離は５００ｍｍ以下である。このようにすることで、フットプリントを縮小することができる。 The distance 200 between the first processing chamber 212 and the third processing chamber 214 is 500 mm or less, and the distance between the third processing chamber 214 and the fifth processing chamber 216 is 500 mm or less. The distance between the second processing chamber 213 and the fourth processing chamber 215 is 500 mm or less, and the distance between the fourth processing chamber 215 and the sixth processing chamber 217 is 500 mm or less. In this way, the footprint can be reduced.
　第１～第３の受渡室２３１～２３３、第１～第３の搬送室２６１～２６３及び第１～第６の処理室２１２～２１７は、それぞれ図示せぬ真空排気機構に接続されている。 The first to third delivery chambers 231 to 233, the first to third transfer chambers 261 to 263, and the first to sixth processing chambers 212 to 217 are each connected to a vacuum exhaust mechanism (not shown).
　図１の処理装置によれば、処理室の数が増えても搬送ロボットが基板を処理室から処理室へ搬送する際の待ち時間を図９に示す処理装置に比べて少なくすることができる。その結果、スループットの低下を抑制することができる。 According to the processing apparatus of FIG. 1, even when the number of processing chambers increases, the waiting time when the transfer robot transfers the substrate from the processing chamber to the processing chamber can be reduced as compared with the processing apparatus shown in FIG. As a result, a decrease in throughput can be suppressed.
　第３の搬送室２６３には、第４の開口２７４と反対側に位置する第５の開口２７５が形成されており、この第５の開口２７５が蓋（図示せず）により塞がれているとよい。このようにしておけば、第３の搬送室２６３の第５の開口２７５側に、第３の受渡室２３３と同様の受渡室、第３の搬送室２６３と同様の搬送室、第１～第６の処理室２１２～２１７と同様の処理室を、図１に示すように増設することが容易となる。但し、増設する処理室の内部は第１～第６の処理室２１２～２１７と全く同様である必要はなく、適切なものに適宜変更して実施することも可能である。 The third transfer chamber 263 is formed with a fifth opening 275 located on the side opposite to the fourth opening 274, and the fifth opening 275 is closed by a lid (not shown). Good. In this way, on the fifth opening 275 side of the third transfer chamber 263, a transfer chamber similar to the third transfer chamber 233, a transfer chamber similar to the third transfer chamber 263, and the first to second It is easy to add processing chambers similar to the six processing chambers 212 to 217 as shown in FIG. However, the inside of the additional processing chamber does not need to be exactly the same as the first to sixth processing chambers 212 to 217, and can be appropriately changed to an appropriate one.
　図２は、図１に示す第３の受渡室２３３の内部構造を模式的に示す断面図である。第３の受渡室２３３はチャンバー２３３ａを有し、チャンバー２３３ａには第３の開口２７３及び第４の開口２７４が形成されている。チャンバー２３３ａ内には第７のステージ２４７の下に第１２のステージ２４７ａが配置されており、第７のステージ２４７及び第１２のステージ２４７ａは上下移動機構（図示せず）により矢印２４７ｂのように上下移動可能に構成されている。ま FIG. 2 is a cross-sectional view schematically showing the internal structure of the third delivery chamber 233 shown in FIG. The third delivery chamber 233 includes a chamber 233a, and a third opening 273 and a fourth opening 274 are formed in the chamber 233a. A twelfth stage 247a is disposed under the seventh stage 247 in the chamber 233a. The seventh stage 247 and the twelfth stage 247a are moved as shown by an arrow 247b by a vertical movement mechanism (not shown). It is configured to be movable up and down. Ma
　また、第３の受渡室２３３は、第７のステージ２４７に保持された基板２５１を加熱するランプヒータ２０１と、第１２のステージ２４７ａに保持された基板２５１ａを加熱するランプヒータ２０２を有している。 The third delivery chamber 233 includes a lamp heater 201 that heats the substrate 251 held on the seventh stage 247 and a lamp heater 202 that heats the substrate 251a held on the twelfth stage 247a. Yes.
　第２の搬送ロボット２６２ａの搬送アーム２６２ｂは、矢印２６２ｃのように移動することで、第３の開口２７３を通って基板２５１ａを第１２のステージ２４７ａ上に搬送すること、または基板２５１ａを第１２のステージ２４７ａから別のステージへ搬送することができるようになっている。また、第３の搬送ロボット２６３ａの搬送アーム２６３ｂは、矢印２６３ｃのように移動することで、第４の開口２７４を通って基板２５１を第７のステージ２４７上に搬送すること、または基板２５１を第７のステージ２４７から別のステージへ搬送することができるようになっている。 The transfer arm 262b of the second transfer robot 262a moves as indicated by an arrow 262c to transfer the substrate 251a onto the twelfth stage 247a through the third opening 273, or to transfer the substrate 251a to the twelfth stage. The stage 247a can be transported to another stage. Further, the transfer arm 263b of the third transfer robot 263a moves as indicated by an arrow 263c to transfer the substrate 251 onto the seventh stage 247 through the fourth opening 274, or to transfer the substrate 251. It can be conveyed from the seventh stage 247 to another stage.
　第１の受渡室２３１及び第２の受渡室２３２それぞれの内部構造は、第３の受渡室２３３と同様とするとよい。但し、第１～第３の受渡室２３１～２３３それぞれの内部構造は、図２に示す構造から適宜変更することが可能であり、例えば、ステージを２段ではなく１段にしても良いし、ランプヒータ２０１，２０２を一方のみにしても良いし、ランプヒータを無くしてもよい。 The internal structure of each of the first delivery chamber 231 and the second delivery chamber 232 may be the same as that of the third delivery chamber 233. However, the internal structure of each of the first to third delivery chambers 231 to 233 can be appropriately changed from the structure shown in FIG. 2, for example, the stage may be one stage instead of two stages, The lamp heaters 201 and 202 may be only one, or the lamp heater may be omitted.
　第１～第３の受渡室２３１～２３３が図２に示すように２段のステージを備えることで、例えば、第１の処理室２１２、第３の処理室２１４、第５の処理室２１６、第６の処理室２１７、第４の処理室２１５、第２の処理室２１３の順に基板を連続的に処理して搬送する際に、受渡室のステージが空いていないことによる搬送待ちの時間をほとんど無くすことができる。つまり、処理室を無駄なく使用して複数の基板を同時に処理する場合でも、受渡室のステージが空いていないことによる搬送待ちの時間をほとんど無くすことができる。従って、基板の処理時間を削減することができる。
　なお、第３の搬送室２６３に第５の開口２７５を介して接続された第４の受渡室を設け、第４の受渡室内には基板２５１を保持する第１０のステージが配置されているとよい。この第４の受渡室は、受渡室のステージが空いていないことによる搬送待ちの時間を削減することに役立つ。また、第４の受渡室の内部構造は図２に示す構造と同様であってもよい。 Since the first to third delivery chambers 231 to 233 include two stages as shown in FIG. 2, for example, the first processing chamber 212, the third processing chamber 214, the fifth processing chamber 216, When the substrate is successively processed and transferred in the order of the sixth processing chamber 217, the fourth processing chamber 215, and the second processing chamber 213, the waiting time for transfer due to the fact that the stage of the delivery chamber is not empty is set. Can be almost eliminated. That is, even when a plurality of substrates are processed at the same time using the processing chamber without waste, it is possible to almost eliminate the waiting time for transport due to the absence of the stage in the delivery chamber. Accordingly, the processing time of the substrate can be reduced.
Note that a fourth delivery chamber connected to the third transfer chamber 263 through the fifth opening 275 is provided, and a tenth stage for holding the substrate 251 is disposed in the fourth delivery chamber. Good. The fourth delivery chamber is useful for reducing the waiting time for conveyance due to the absence of the delivery chamber stage. Further, the internal structure of the fourth delivery chamber may be the same as the structure shown in FIG.
　図３は、図１に示す第１の処理室２１２の構造の詳細を模式的に示す断面図であり、第２のステージ２４２に保持された基板２５１に蒸着法によりＺｒ膜を成膜するエピタキシャル蒸着装置である。チャンバー３０１内には基板２５１を保持する第２のステージ２４２が配置されており、基板２５１は第２のゲートバルブ２２３を通して搬送される。基板２５１上にはハロゲンランプヒータ３０２が配置されており、このハロゲンランプヒータ３０２によって基板２５１が加熱されるようになっている。ハロゲンランプヒータ３０２はモーターＭによって矢印のように回転されるように構成されており、ハロゲンランプヒータ３０２にはヒータ電源及び温調器３０３が接続されている。基板２５１の近傍にはロータリーセンサー式膜厚モニター３０４が配置されており、この膜厚モニター３０４はクリスタル４枚切替部３０５を備えている。 FIG. 3 is a cross-sectional view schematically showing the details of the structure of the first processing chamber 212 shown in FIG. 1, in which an epitaxial film is formed by depositing a Zr film on the substrate 251 held on the second stage 242. It is a vapor deposition device. A second stage 242 that holds the substrate 251 is disposed in the chamber 301, and the substrate 251 is transported through the second gate valve 223. A halogen lamp heater 302 is disposed on the substrate 251, and the substrate 251 is heated by the halogen lamp heater 302. The halogen lamp heater 302 is configured to be rotated as indicated by an arrow by a motor M, and a heater power source and a temperature controller 303 are connected to the halogen lamp heater 302. A rotary sensor type film thickness monitor 304 is disposed in the vicinity of the substrate 251, and the film thickness monitor 304 includes a four-crystal switching unit 305.
　基板２５１の下方にはＥＢガン３０６を備えた蒸着源３０７が配置されており、蒸着源３０７と基板２５１との間にはシャッター３０８が配置されている。シャッターは駆動部３０９によって開閉可能に構成されている。また、チャンバー３０１内にＡｒガスを導入するガス導入機構がチャンバー３０１に取り付けられている。なお、チャンバー３０１内にＯ２ガスを導入するガス導入機構もチャンバー３０１に取り付けられていてもよい。 A deposition source 307 including an EB gun 306 is disposed below the substrate 251, and a shutter 308 is disposed between the deposition source 307 and the substrate 251. The shutter is configured to be opened and closed by a drive unit 309. A gas introduction mechanism that introduces Ar gas into the chamber 301 is attached to the chamber 301. Note that a gas introduction mechanism for introducing O 2 gas into the chamber 301 may also be attached to the chamber 301.
　第１の処理室２１２は、図１に示すようにチャンバー３０１の内部をオペレータ３１１がメンテナンスするための扉３１０を有している。フットプリントを縮小するために処理室の相互間の距離２００を５００ｍｍ以下とすると、メンテナンスのための大きな扉３１０を設けた蒸着装置は第１の処理室２１２に配置することが好ましい。この扉３１０は５００ｍｍの間隔ではオペレータ３１１が作業する空間を十分に確保できないからである。 The first processing chamber 212 has a door 310 for the operator 311 to maintain the inside of the chamber 301 as shown in FIG. When the distance 200 between the processing chambers is set to 500 mm or less in order to reduce the footprint, the deposition apparatus provided with the large door 310 for maintenance is preferably disposed in the first processing chamber 212. This is because the door 310 cannot secure a sufficient space for the operator 311 to work at an interval of 500 mm.
　図４は、図１に示す第３の処理室２１４の内部構造を模式的に示す断面図であり、第５のステージ２４５に保持された基板２５１にランプ光を照射するランプヒータを有する加圧式ランプアニール装置である。図５は、図４に示すＡ－Ａ'部の断面図である。図６は、図４に示すＢ－Ｂ'部の断面図である。 FIG. 4 is a cross-sectional view schematically showing the internal structure of the third processing chamber 214 shown in FIG. 1, and is a pressure type having a lamp heater for irradiating the substrate 251 held by the fifth stage 245 with lamp light. This is a lamp annealing device. FIG. 5 is a cross-sectional view taken along the line AA ′ shown in FIG. FIG. 6 is a cross-sectional view taken along the line BB ′ shown in FIG.
　図４乃至図６に示すように、加圧式ランプアニール装置はＡｌ製のチャンバー２１を有しており、このチャンバー２１の内部によって第３の処理室２１４が形成されている。チャンバー２１の内表面２１ａには表面処理が施されている。つまり、チャンバー２１の内表面２１ａには反射膜が形成されている。具体的な表面処理としては、Ａｕメッキ処理又はシュウ酸アルマイト処理を用いることが可能である。これにより、チャンバー２１の内表面２１ａにはＡｕメッキ膜又はシュウ酸アルマイト膜が形成され、このＡｕメッキ膜又はシュウ酸アルマイト膜でランプ光を反射させることができる。その結果、昇温レートを上げることができる。また、消費電力を少なくすることができる。また、チャンバー２１は図示せぬ冷却機構によって水冷されるように構成されている。 As shown in FIGS. 4 to 6, the pressure-type lamp annealing apparatus has an Al chamber 21, and a third processing chamber 214 is formed inside the chamber 21. A surface treatment is applied to the inner surface 21 a of the chamber 21. That is, a reflective film is formed on the inner surface 21 a of the chamber 21. As a specific surface treatment, Au plating treatment or oxalic acid alumite treatment can be used. Thereby, an Au plating film or an oxalate alumite film is formed on the inner surface 21a of the chamber 21, and the lamp light can be reflected by the Au plating film or the oxalate alumite film. As a result, the temperature increase rate can be increased. In addition, power consumption can be reduced. The chamber 21 is configured to be water cooled by a cooling mechanism (not shown).
　尚、本実施形態では、前記表面処理としてＡｕメッキ処理又はシュウ酸アルマイト処理を用いているが、本発明はこれに限定されるものではなく、Ａｌ、Ａｕ、Ａｇ、Ｃｕ、Ｐｔ、Ｔｉからなる群から選択された一の金属を主成分としたコーティング膜を用いることも可能である。 In this embodiment, Au plating treatment or oxalic acid alumite treatment is used as the surface treatment, but the present invention is not limited to this, and is made of Al, Au, Ag, Cu, Pt, Ti. It is also possible to use a coating film whose main component is one metal selected from the group.
　チャンバー２１内には基板２５１としてのウエハを保持する第５のステージ２４５が設けられている。第５のステージ２４５はランプ光が透過する材料、例えば石英で形成されている。第５のステージ２４５の下方には複数の透明管２０が配置されており、これら透明管２０はランプ光が透過する材料、例えば石英で形成されている。複数の透明管２０それぞれの内部にはランプヒータ１９が配置されている。 A fifth stage 245 for holding a wafer as a substrate 251 is provided in the chamber 21. The fifth stage 245 is made of a material that transmits lamp light, for example, quartz. A plurality of transparent tubes 20 are arranged below the fifth stage 245, and these transparent tubes 20 are made of a material that transmits lamp light, for example, quartz. A lamp heater 19 is disposed inside each of the plurality of transparent tubes 20.
　チャンバー２１の上部内壁２１ｂには溝１８が形成されており、この溝１８の内壁は、透明管２０の外表面に沿った曲面を有している。これにより、透明管２０を、その外表面が溝１８の内壁の曲面に接触した状態で溝１８内に配置することができる。ランプヒータ１９のランプ光は、第５のステージ２４５に保持された基板２５１に透明管２０を通して照射されるようになっている。 A groove 18 is formed in the upper inner wall 21 b of the chamber 21, and the inner wall of the groove 18 has a curved surface along the outer surface of the transparent tube 20. Thereby, the transparent tube 20 can be disposed in the groove 18 with its outer surface in contact with the curved surface of the inner wall of the groove 18. The lamp light of the lamp heater 19 is applied to the substrate 251 held on the fifth stage 245 through the transparent tube 20.
　図５及び図６に示すように、透明管２０の一方端２０ａはチャンバー２１の外側に位置する金属製の第１の筐体２６ａの内部に繋げられており、透明管２０の他方端２０ｂはチャンバー２１の外側に位置する金属製の第２の筐体２６ｂの内部に繋げられている。第１の筐体２６ａには排気ダクト（図示せず）が接続されており、この排気ダクトは第１の筐体２６ａ、透明管２０及び第２の筐体２６ｂそれぞれの内部の熱を排気するものである。 As shown in FIGS. 5 and 6, one end 20 a of the transparent tube 20 is connected to the inside of a metal first housing 26 a located outside the chamber 21, and the other end 20 b of the transparent tube 20 is It is connected to the inside of the second housing 26b made of metal located outside the chamber 21. An exhaust duct (not shown) is connected to the first casing 26a, and this exhaust duct exhausts heat inside each of the first casing 26a, the transparent tube 20, and the second casing 26b. Is.
　透明管２０の両端２０ａ，２０ｂそれぞれとチャンバー２１との間には白色のＯリング２８が配置されている。これらのＯリング２８は第３の処理室２１４内の気密性を保持するものである。白色のＯリング２８を用いる理由は、例えば黒色のＯリングを用いるとランプヒータ１９からのランプ光によってＯリングが融けてしまうが、白色のＯリングを用いるとランプ光によってＯリングが融けることを抑制できるからである。 White O-rings 28 are arranged between the chambers 21 and both ends 20a, 20b of the transparent tube 20. These O-rings 28 maintain the airtightness in the third processing chamber 214. The reason why the white O-ring 28 is used is that, for example, if a black O-ring is used, the O-ring is melted by the lamp light from the lamp heater 19, but if the white O-ring is used, the O-ring is melted by the lamp light. This is because it can be suppressed.
　第５のステージ２４５の上方に位置するチャンバー２１の上部には窓が設けられており、この窓にはフッ化カルシウム８が配置されている。フッ化カルシウム８の上方には放射温度計９が配置されている。フッ化カルシウム８は、放射温度計９で基板の温度を測定するために、測定する波長領域の光（波長５μｍの赤外線）を取り込むために配置している。 A window is provided above the chamber 21 located above the fifth stage 245, and calcium fluoride 8 is disposed in this window. A radiation thermometer 9 is disposed above the calcium fluoride 8. In order to measure the temperature of the substrate with the radiation thermometer 9, the calcium fluoride 8 is arranged to take in light in the wavelength region to be measured (infrared light having a wavelength of 5 μm).
　チャンバー２１内に形成される第３の処理室２１４は狭い方が好ましい。その理由は、所定の圧力まで加圧又は減圧するのに必要な時間を短くすることができるからである。また、第３の処理室２１４内の高さは低い方が好ましい。その理由は、第３の処理室２１４内に配置された基板２５１とランプヒータ１９との間の距離を短くでき、それによって昇温レートを上げることができるからである。 The third processing chamber 214 formed in the chamber 21 is preferably narrow. This is because the time required to pressurize or depressurize to a predetermined pressure can be shortened. Further, the height in the third treatment chamber 214 is preferably low. The reason is that the distance between the substrate 251 and the lamp heater 19 disposed in the third processing chamber 214 can be shortened, thereby increasing the temperature rising rate.
　チャンバー２１内の第３の処理室２１４は加圧ライン（加圧機構）１２に接続されている。加圧ライン１２は、アルゴンガスによる加圧ライン、酸素ガスによる加圧ライン及び窒素ガスによる加圧ラインを有している。 The third processing chamber 214 in the chamber 21 is connected to the pressurization line (pressurization mechanism) 12. The pressurization line 12 has a pressurization line using argon gas, a pressurization line using oxygen gas, and a pressurization line using nitrogen gas.
　アルゴンガスによる加圧ラインはアルゴンガス供給源１３を備え、このアルゴンガス供給源１３は配管を介して逆止弁１４に接続されており、この逆止弁１４は配管を介して不純物を除去するためのフィルタ１７に接続されている。このフィルタ１７は配管を介してバルブ５０に接続されており、この配管は圧力計４７に接続されている。バルブ５０は配管を介してレギュレータ５３に接続されており、このレギュレータ５３は配管を介してマスフローコントローラ３１に接続されている。レギュレータ５３は、ガスの圧力を徐々に上げることによりマスフローコントローラ３１の上流側と下流側の差圧を所定圧に設定するものである。マスフローコントローラ３１は配管を介してバルブ３４に接続されており、このバルブ３４は配管を介して加熱ユニット３７に接続されている。加熱ユニット３７は、プロセスを安定させるためにガス温度を一定（例えば４０～５０℃程度）にするものである。加熱ユニット３７は配管５１を介してチャンバー２１内の第３の処理室２１４に接続されている。 The argon gas pressurization line includes an argon gas supply source 13, and this argon gas supply source 13 is connected to a check valve 14 through a pipe, and the check valve 14 removes impurities through the pipe. Is connected to a filter 17. The filter 17 is connected to a valve 50 through a pipe, and this pipe is connected to a pressure gauge 47. The valve 50 is connected to a regulator 53 via a pipe, and the regulator 53 is connected to the mass flow controller 31 via a pipe. The regulator 53 sets the differential pressure between the upstream side and the downstream side of the mass flow controller 31 to a predetermined pressure by gradually increasing the gas pressure. The mass flow controller 31 is connected to a valve 34 via a pipe, and this valve 34 is connected to a heating unit 37 via a pipe. The heating unit 37 makes the gas temperature constant (for example, about 40 to 50 ° C.) in order to stabilize the process. The heating unit 37 is connected to a third processing chamber 214 in the chamber 21 through a pipe 51.
　酸素ガスによる加圧ラインは、アルゴンガスによる加圧ラインと同様に構成されている。詳細には、酸素ガスによる加圧ラインは酸素ガス供給源２９を備え、この酸素ガス供給源２９は配管を介して逆止弁１５に接続されており、この逆止弁１５は配管を介して不純物を除去するためのフィルタ３０に接続されている。このフィルタ３０は配管を介してバルブ２４に接続されており、この配管は圧力計４８に接続されている。バルブ２４は配管を介してレギュレータ２７に接続されており、このレギュレータ２７は配管を介してマスフローコントローラ３２に接続されている。マスフローコントローラ３２は配管を介してバルブ３５に接続されており、このバルブ３５は配管を介して加熱ユニット３７に接続されている。加熱ユニット３７は配管５１を介してチャンバー２１内の第３の処理室２１４に接続されている。 The pressurization line using oxygen gas is configured in the same manner as the pressurization line using argon gas. In detail, the pressurization line by oxygen gas is provided with the oxygen gas supply source 29, and this oxygen gas supply source 29 is connected to the check valve 15 via piping, and this check valve 15 is connected via piping. It is connected to a filter 30 for removing impurities. The filter 30 is connected to the valve 24 via a pipe, and this pipe is connected to a pressure gauge 48. The valve 24 is connected to a regulator 27 via piping, and this regulator 27 is connected to the mass flow controller 32 via piping. The mass flow controller 32 is connected to a valve 35 via a pipe, and this valve 35 is connected to a heating unit 37 via a pipe. The heating unit 37 is connected to a third processing chamber 214 in the chamber 21 through a pipe 51.
　窒素ガスによる加圧ラインは、アルゴンガスによる加圧ラインと同様に構成されている。詳細には、窒素ガスによる加圧ラインは窒素ガス供給源３８を備え、この窒素ガス供給源３８は配管を介して逆止弁１６に接続されており、この逆止弁１６は配管を介して不純物を除去するためのフィルタ４６ａに接続されている。このフィルタ４６ａは配管を介してバルブ５３ａに接続されており、この配管は圧力計４９に接続されている。バルブ５３ａは配管を介してレギュレータ５４に接続されており、このレギュレータ５４は配管を介してマスフローコントローラ３３に接続されている。マスフローコントローラ３３は配管を介してバルブ３６に接続されており、このバルブ３６は配管を介して加熱ユニット３７に接続されている。加熱ユニット３７は配管５１を介してチャンバー２１内の第３の処理室２１４に接続されている。 The pressurization line with nitrogen gas has the same configuration as the pressurization line with argon gas. In detail, the pressurization line by nitrogen gas is provided with the nitrogen gas supply source 38, and this nitrogen gas supply source 38 is connected to the check valve 16 via piping, and this check valve 16 is connected via piping. It is connected to a filter 46a for removing impurities. The filter 46 a is connected to a valve 53 a via a pipe, and this pipe is connected to a pressure gauge 49. The valve 53a is connected to a regulator 54 via a pipe, and this regulator 54 is connected to the mass flow controller 33 via a pipe. The mass flow controller 33 is connected to a valve 36 via a pipe, and this valve 36 is connected to a heating unit 37 via a pipe. The heating unit 37 is connected to a third processing chamber 214 in the chamber 21 through a pipe 51.
　また、チャンバー２１内の第３の処理室２１４は圧力調整ラインに接続されている。この圧力調整ライン及び加圧ライン１２によってチャンバー２１内の第３の処理室２１４を所定の圧力（例えば１ＭＰａ未満）に加圧できるようになっている。前記圧力調整ラインは可変バルブ３９を備えており、この可変バルブ３９の一方側は配管５２を介してチャンバー２１内の第３の処理室２１４に接続されている。配管５２は圧力計４０に接続されており、この圧力計４０によって第３の処理室２１４内の圧力を測定できるようになっている。可変バルブ３９の他方側は配管に接続されている。 Further, the third processing chamber 214 in the chamber 21 is connected to a pressure adjustment line. The third processing chamber 214 in the chamber 21 can be pressurized to a predetermined pressure (for example, less than 1 MPa) by the pressure adjustment line and the pressure line 12. The pressure adjustment line includes a variable valve 39, and one side of the variable valve 39 is connected to a third processing chamber 214 in the chamber 21 through a pipe 52. The pipe 52 is connected to the pressure gauge 40, and the pressure gauge 40 can measure the pressure in the third processing chamber 214. The other side of the variable valve 39 is connected to piping.
　また、チャンバー２１内の第３の処理室２１４は安全ラインに接続されている。この安全ラインは、第３の処理室２１４内が異常に加圧され過ぎてある一定の圧力以上になった時に処理室内を大気圧まで下げるためのものである。安全ラインは開放バルブ４１を備えている。この開放バルブ４１の一方側は配管５２を介してチャンバー２１内の第３の処理室２１４に接続されており、開放バルブ４１の他方側は配管に接続されている。開放バルブ４１はある一定の圧力がかかるとガスが流れるようになっている。 The third processing chamber 214 in the chamber 21 is connected to a safety line. This safety line is for lowering the inside of the processing chamber to the atmospheric pressure when the inside of the third processing chamber 214 is excessively pressurized and exceeds a certain pressure. The safety line is provided with an open valve 41. One side of the open valve 41 is connected to the third processing chamber 214 in the chamber 21 via the pipe 52, and the other side of the open valve 41 is connected to the pipe. The release valve 41 is configured to allow gas to flow when a certain pressure is applied.
　また、チャンバー２１内の第３の処理室２１４は大気開放ラインに接続されている。この大気開放ラインは、正常に加圧された第３の処理室２１４内を大気圧に戻すものである。大気開放ラインは開放バルブ４２を備えている。この開放バルブ４２の一方側は配管５２を介してチャンバー２１内の第３の処理室２１４に接続されており、開放バルブ４２の他方側は配管に接続されている。開放バルブ４２は、第３の処理室２１４内を大気圧に戻すために該第３の処理室２１４内のガスを徐々に流すようになっている。 In addition, the third processing chamber 214 in the chamber 21 is connected to the air release line. This atmospheric release line returns the inside of the third processing chamber 214 that has been normally pressurized to atmospheric pressure. The atmosphere opening line is provided with an opening valve 42. One side of the release valve 42 is connected to the third processing chamber 214 in the chamber 21 via the pipe 52, and the other side of the release valve 42 is connected to the pipe. The release valve 42 gradually allows the gas in the third processing chamber 214 to flow in order to return the inside of the third processing chamber 214 to atmospheric pressure.
　また、チャンバー２１内の第３の処理室２１４は減圧状態から大気圧に戻すラインに接続されている。このラインは、第３の処理室２１４内が減圧状態（真空状態）となっている場合に、減圧状態から大気圧に戻すものである。前記ラインはリークバルブ４３を備えている。このリークバルブ４３の一方側は配管５２を介してチャンバー２１内の第３の処理室２１４に接続されており、リークバルブ４３の他方側は配管を介して逆止弁４４に接続されている。この逆止弁４４は配管を介して窒素ガス供給源４５に接続されている。つまり、前記ラインは、窒素ガス供給源４５から逆止弁４４、リークバルブ４３を介して第３の処理室２１４内に窒素ガスを徐々に導入することにより処理室内を大気圧に戻すようになっている。 Further, the third processing chamber 214 in the chamber 21 is connected to a line for returning from the reduced pressure state to the atmospheric pressure. This line is used to return from the reduced pressure state to the atmospheric pressure when the inside of the third processing chamber 214 is in a reduced pressure state (vacuum state). The line includes a leak valve 43. One side of the leak valve 43 is connected to a third processing chamber 214 in the chamber 21 via a pipe 52, and the other side of the leak valve 43 is connected to a check valve 44 via a pipe. The check valve 44 is connected to a nitrogen gas supply source 45 through a pipe. In other words, the line returns the processing chamber to atmospheric pressure by gradually introducing nitrogen gas from the nitrogen gas supply source 45 into the third processing chamber 214 via the check valve 44 and the leak valve 43. ing.
　また、チャンバー２１内の第３の処理室２１４は、該第３の処理室２１４内を減圧状態にするための真空排気ラインに接続されている。この真空排気ラインはバルブ６９を有しており、このバルブ６９の一端は配管を介して第３の処理室２１４に接続されている。バルブ６９の他端は配管を介して真空ポンプ７０に接続されている。この真空排気ラインは、例えば減圧雰囲気で加圧ＲＴＡを行う場合などに使用される。 The third processing chamber 214 in the chamber 21 is connected to a vacuum exhaust line for reducing the pressure in the third processing chamber 214. The evacuation line has a valve 69, and one end of the valve 69 is connected to the third processing chamber 214 via a pipe. The other end of the valve 69 is connected to the vacuum pump 70 via a pipe. This evacuation line is used, for example, when performing pressurized RTA in a reduced pressure atmosphere.
　第１及び第２の筐体２６ａ，２６ｂ、透明管２０内のランプヒータ１９それぞれは配管を介してドライエアー供給源（図示せず）又は窒素ガス供給源（図示せず）に接続されている。ドライエアー供給源又は窒素ガス供給源からドライエアー又は窒素ガスを第１及び第２の筐体２６ａ，２６ｂ内及び透明管２０内に導入することにより、ランプヒータ１９を冷却し、筐体内及び透明管２０内に溜まる熱を前記排気ダクトから排気することができる。 The lamp heaters 19 in the first and second casings 26a and 26b and the transparent tube 20 are each connected to a dry air supply source (not shown) or a nitrogen gas supply source (not shown) via a pipe. . By introducing dry air or nitrogen gas from the dry air supply source or nitrogen gas supply source into the first and second casings 26a and 26b and the transparent tube 20, the lamp heater 19 is cooled, and the casing and transparent Heat accumulated in the tube 20 can be exhausted from the exhaust duct.
　加圧ライン１２から導入されるアルゴンガス、酸素ガス及び窒素ガスそれぞれは、基板２５１の表面と略平行方向にシャワー状に分散させながら基板２５１上に供給されるようになっている。このウエハ上に供給されたガスは、基板２５１の表面と略平行方向に並べられた第２のシャワー状ガス通路（図示せず）から排気されるようになっている。詳細には、配管５１は第１のシャワー状ガス通路（図示せず）に接続されており、配管５２は第２のシャワー状ガス通路に接続されている。第１及び第２のシャワー状ガス通路はチャンバー２１に形成されている。このようにガスをシャワー状に分散させながら流し、且つ第２のシャワー状ガス通路を通して排気することにより、基板２５１上に均一性よくガスを供給することが可能となる。 Argon gas, oxygen gas and nitrogen gas introduced from the pressurization line 12 are supplied onto the substrate 251 while being dispersed in a shower shape in a direction substantially parallel to the surface of the substrate 251. The gas supplied onto the wafer is exhausted from a second shower-like gas passage (not shown) arranged in a direction substantially parallel to the surface of the substrate 251. Specifically, the pipe 51 is connected to a first shower-like gas passage (not shown), and the pipe 52 is connected to a second shower-like gas passage. The first and second shower-like gas passages are formed in the chamber 21. In this manner, the gas can be supplied to the substrate 251 with good uniformity by flowing while dispersing the gas in a shower and exhausting through the second shower-like gas passage.
　チャンバー２１の一方側にはゲートバルブ（図示せず）が配置されており、このゲートバルブの近傍にはウエハを搬送する搬送ロボット（図示せず）が配置されている。この搬送ロボットの近傍にはウエハを収容するカセット（図示せず）が配置されている。ゲートバルブを開いた状態で、チャンバー２１内の第３の処理室２１４に基板２５１を搬送ロボットにより搬入、搬出するようになっている。 A gate valve (not shown) is arranged on one side of the chamber 21, and a transfer robot (not shown) for transferring a wafer is arranged near the gate valve. A cassette (not shown) for storing wafers is disposed in the vicinity of the transfer robot. With the gate valve opened, the substrate 251 is carried into and out of the third processing chamber 214 in the chamber 21 by a transfer robot.
　次に、上記加圧式ランプアニール装置を使用する方法について説明する。
　上記加圧式ランプアニール装置は、基板２５１に加圧アニール処理を行うことが可能である。 Next, a method of using the pressure type lamp annealing apparatus will be described.
The pressure-type lamp annealing apparatus can perform a pressure annealing process on the substrate 251.
　加圧アニール処理について説明する。
　チャンバーの第３の処理室２１４内を加圧雰囲気とする。詳細には、例えば加圧ライン１２の酸素ガス供給源２９から逆止弁１５、フィルタ３０、バルブ２４、レギュレータ２７、マスフローコントローラ３２、バルブ３５、加熱ユニット３７、配管５１を通して酸素ガスを第３の処理室２１４内に導入する。これと共に、圧力調整ラインの可変バルブ３９を徐々に閉じていくことにより、第３の処理室２１４内を酸素雰囲気としながら徐々に加圧する。そして、第３の処理室２１４内は１ＭＰａ未満の所定の圧力まで加圧され、その圧力で維持される。次いで、ランプヒータ１９から透明管２０を通してランプ光を基板２５１に照射することにより、基板２５１に加圧酸素雰囲気でアニール処理が施される。 The pressure annealing process will be described.
The inside of the third treatment chamber 214 of the chamber is a pressurized atmosphere. Specifically, for example, oxygen gas is supplied from the oxygen gas supply source 29 of the pressurization line 12 through the check valve 15, the filter 30, the valve 24, the regulator 27, the mass flow controller 32, the valve 35, the heating unit 37, and the pipe 51. It is introduced into the processing chamber 214. At the same time, by gradually closing the variable valve 39 of the pressure adjustment line, the inside of the third processing chamber 214 is gradually pressurized while maintaining an oxygen atmosphere. The inside of the third processing chamber 214 is pressurized to a predetermined pressure of less than 1 MPa and is maintained at that pressure. Next, the substrate 251 is annealed in a pressurized oxygen atmosphere by irradiating the substrate 251 with lamp light from the lamp heater 19 through the transparent tube 20.
　図７は、図１に示す第２の処理室２１３の構造の詳細を模式的に示す断面図であり、第３のステージ２４３に保持された基板２５１にスパッタリングによりＰｂ（Ｚｒ，Ｔｉ）Ｏ３膜（ＰＺＴ膜ともいう。）を成膜するスパッタリング装置である。チャンバー４０１内には基板２５１を保持する第３のステージ２４３が配置されており、基板２５１は第３のゲートバルブ２２４を通して搬送される。基板２５１の下にはハロゲンランプヒータ４０２が配置されており、このハロゲンランプヒータ４０２によって基板２５１が加熱されるようになっている。ハロゲンランプヒータ４０２にはヒータ電源及び温調器４０３が接続されている。また、基板２５１の温度を測定する放射温度計４１０をスパッタリング装置は備えている。 FIG. 7 is a cross-sectional view schematically showing details of the structure of the second processing chamber 213 shown in FIG. 1, and Pb (Zr, Ti) O 3 is sputtered onto the substrate 251 held on the third stage 243. A sputtering apparatus forms a film (also referred to as a PZT film). A third stage 243 that holds the substrate 251 is disposed in the chamber 401, and the substrate 251 is transported through the third gate valve 224. A halogen lamp heater 402 is disposed under the substrate 251, and the substrate 251 is heated by the halogen lamp heater 402. A heater power supply and temperature controller 403 is connected to the halogen lamp heater 402. Further, the sputtering apparatus includes a radiation thermometer 410 that measures the temperature of the substrate 251.
　基板２５１の上方にはロータリーマグネットカソードが配置されており、ロータリーマグネットカソードはスパッタリングターゲット４１１を有する。スパッタリングターゲット４１１にはパルス状のＲＦ（高周波）４１２がマッチングボックスＭＢを通して供給されるようになっている。スパッタリングターゲット４１１と基板２５１との間にはシャッター４０８が配置されている。シャッター４０８は駆動部４０９によって開閉可能に構成されている。また、チャンバー４０１内にＡｒガスを導入するガス導入機構がチャンバー３０１に取り付けられている。また、チャンバー４０１内にＯ２ガスを導入するガス導入機構がチャンバー４０１に取り付けられている。 A rotary magnet cathode is disposed above the substrate 251, and the rotary magnet cathode has a sputtering target 411. Pulsed RF (high frequency) 412 is supplied to the sputtering target 411 through the matching box MB. A shutter 408 is disposed between the sputtering target 411 and the substrate 251. The shutter 408 is configured to be opened and closed by a drive unit 409. A gas introduction mechanism for introducing Ar gas into the chamber 401 is attached to the chamber 301. A gas introduction mechanism for introducing O 2 gas into the chamber 401 is attached to the chamber 401.
　次に、図１の処理装置を用いて図８に示す膜を成膜する方法について説明する。なお、基板はＳｉ基板を用いる。Ｓｉ基板２５１にはＳｉの自然酸化膜５０１が数ｎｍ形成されている。 Next, a method for forming the film shown in FIG. 8 using the processing apparatus of FIG. 1 will be described. Note that a Si substrate is used as the substrate. A Si natural oxide film 501 is formed on the Si substrate 251 by several nm.
　図１に示す大気搬送システム２１１内のＳｉ基板２５１を、ゲートバルブ２２１を開いて第１の受渡室２３１に搬送し、第１の受渡室２３１内の第１のステージ２４１に保持する。そして、ゲートバルブ２２１を閉じる。次いで、第１の受渡室２３１内を真空排気する。第１～第３の搬送室２６１～２６３、第２の受渡室２３２及び第３の受渡室２３３それぞれの内部も真空排気する。 The Si substrate 251 in the atmospheric transfer system 211 shown in FIG. 1 is transferred to the first delivery chamber 231 by opening the gate valve 221, and held on the first stage 241 in the first delivery chamber 231. Then, the gate valve 221 is closed. Next, the inside of the first delivery chamber 231 is evacuated. The insides of the first to third transfer chambers 261 to 263, the second delivery chamber 232, and the third delivery chamber 233 are also evacuated.
　次いで、第１のゲートバルブ２２２及び第２のゲートバルブ２２３を開き、第１の搬送ロボット２６１ａにより第１の受渡室２３１内の第１のステージ２４１上の基板２５１を第１の処理室２１２内の第２のステージ２４２上に搬送する。そして、第１及び第２のゲートバルブ２２２，２２３を閉じる。 Next, the first gate valve 222 and the second gate valve 223 are opened, and the substrate 251 on the first stage 241 in the first delivery chamber 231 is moved into the first processing chamber 212 by the first transfer robot 261a. The second stage 242 is conveyed. Then, the first and second gate valves 222 and 223 are closed.
　次に、第１の処理室２１２の図３に示すデポアップ方式の蒸着装置により自然酸化膜５０１上にＺｒ膜を３７．５ｎｍの膜厚で成膜する。この際の成膜時間は１２．５分である。なお、この成膜時間と基板の搬送等の時間との合計は３０分程度である。 Next, a Zr film having a thickness of 37.5 nm is formed on the natural oxide film 501 by a deposition apparatus of the deposition type shown in FIG. The film formation time at this time is 12.5 minutes. The total of the film formation time and the time for transporting the substrate is about 30 minutes.
　次いで、第２のゲートバルブ２２３及び第４のゲートバルブ２２５を開き、第１の搬送ロボット２６１ａにより第１の処理室２１２内の第２のステージ２４２上の基板２５１を第２の受渡室２３２内の第４のステージ２４４上に搬送する。次いで、第２の搬送ロボット２６２ａにより第２の受渡室２３２内の第４のステージ２４４上の基板２５１を第３の処理室２１４内の第５のステージ２４５に搬送する。そして、第２及び第４のゲートバルブ２２３，２２５を閉じる。 Next, the second gate valve 223 and the fourth gate valve 225 are opened, and the substrate 251 on the second stage 242 in the first processing chamber 212 is moved into the second delivery chamber 232 by the first transfer robot 261a. The fourth stage 244 is conveyed. Next, the substrate 251 on the fourth stage 244 in the second delivery chamber 232 is transferred to the fifth stage 245 in the third processing chamber 214 by the second transfer robot 262a. Then, the second and fourth gate valves 223 and 225 are closed.
　次に、図４～図６に示すデポアップ方式の加圧式ランプアニール装置により基板２５１上のＺｒ膜に加圧酸素雰囲気でランプ光を照射することで、Ｚｒ膜の一部を酸化させ、Ｚｒ膜とＺｒＯ２膜の積層膜を形成する。これにより、図８に示すように、自然酸化膜５０１上に膜厚が約３ｎｍのＺｒ膜５０２が形成され、Ｚｒ膜５０２上に膜厚が約４７ｎｍのＺｒＯ２膜５０３が形成される。なお、基板の搬送と加圧式ランプアニール処理の合計時間は１１分程度である。従って、ＺｒＯ２膜５０３まで形成する工程の合計時間は４１分程度となる。 Next, by irradiating the Zr film on the substrate 251 with lamp light in a pressurized oxygen atmosphere by the depot up type pressurization lamp annealing apparatus shown in FIGS. 4 to 6, a part of the Zr film is oxidized, and the Zr film And a ZrO 2 film are formed. As a result, as shown in FIG. 8, a Zr film 502 having a thickness of about 3 nm is formed on the natural oxide film 501, and a ZrO 2 film 503 having a thickness of about 47 nm is formed on the Zr film 502. Note that the total time for substrate transport and pressure lamp annealing is about 11 minutes. Therefore, the total time for forming the ZrO 2 film 503 is about 41 minutes.
　上記のＺｒＯ２膜５０３まで形成する工程を、加圧式ランプアニール装置を用いずに、図３に示す蒸着装置のみで形成することも可能であるが、その場合、処理時間が格段に長くなってしまう。詳細には、図３に示す蒸着装置でＺｒＯ２膜５０３を成膜する場合は、チャンバー内にＯ２ガスを導入し、Ｚｒの蒸着物を生成しながらＺｒＯ２を合成してＺｒ膜５０２上に堆積させるため、ＺｒＯ２膜の成膜レートが低くなり、その結果、処理時間が長くなる。従って、ＺｒＯ２膜まで形成する工程の合計時間は６０分程度となり、加圧式ランプアニール装置を用いた場合より１９分程度長くなる。 It is possible to form the process up to the ZrO 2 film 503 by using only the vapor deposition apparatus shown in FIG. 3 without using a pressure-type lamp annealing apparatus. In this case, however, the processing time becomes remarkably long. End up. Specifically, when the ZrO 2 film 503 is formed by the vapor deposition apparatus shown in FIG. 3, an O 2 gas is introduced into the chamber, and ZrO 2 is synthesized while producing a Zr vapor deposition product on the Zr film 502. Therefore, the deposition rate of the ZrO 2 film is lowered, and as a result, the processing time is lengthened. Accordingly, the total time for forming the ZrO 2 film is about 60 minutes, which is about 19 minutes longer than when the pressure type lamp annealing apparatus is used.
　この後、第４のゲートバルブ２２５及び第６のゲートバルブ２２７を開き、第２の搬送ロボット２６２ａにより第３の処理室２１４内の第５のステージ２４５上の基板２５１を第３の受渡室２３３内の第７のステージ２４７上に搬送する。次いで、第３の搬送ロボット２６３ａにより第３の受渡室２３３内の第７のステージ２４７上の基板２５１を第５の処理室２１６内の第８のステージ２４８に搬送する。そして、第４及び第６のゲートバルブ２２５，２２７を閉じる。 Thereafter, the fourth gate valve 225 and the sixth gate valve 227 are opened, and the substrate 251 on the fifth stage 245 in the third processing chamber 214 is transferred to the third delivery chamber 233 by the second transfer robot 262a. It is conveyed onto the seventh stage 247 in the inside. Next, the substrate 251 on the seventh stage 247 in the third delivery chamber 233 is transferred to the eighth stage 248 in the fifth processing chamber 216 by the third transfer robot 263a. Then, the fourth and sixth gate valves 225 and 227 are closed.
　次いで、第５の処理室２１６内で第８のステージ２４８上に保持された基板２５１を反転させる。 Next, the substrate 251 held on the eighth stage 248 is inverted in the fifth processing chamber 216.
　この後、第６のゲートバルブ２２７及び第７のゲートバルブ２２８を開き、第３の搬送ロボット２６３ａにより第５の処理室２１６内の第８のステージ２４８上の基板２５１を第３の受渡室２３３内の第７のステージ２４７上に搬送する。次いで、第３の搬送ロボット２６３ａにより第３の受渡室２３３内の第７のステージ２４７上の基板２５１を第６の処理室２１７内の第９のステージ２４９に搬送する。そして、第６及び第７のゲートバルブ２２７，２２８を閉じる。
　なお、本実施の形態では、上記のように一旦第７のステージ２４７に基板２５１を搬送してから第９のステージ２４９に搬送しているが、第６の処理室２１７で別の基板の処理が終了していて第６の処理室２１７が空いている場合は、基板２５１を第８のステージ２４８から第９のステージ２４９に直接搬送してもよい。 Thereafter, the sixth gate valve 227 and the seventh gate valve 228 are opened, and the substrate 251 on the eighth stage 248 in the fifth processing chamber 216 is transferred to the third delivery chamber 233 by the third transfer robot 263a. It is conveyed onto the seventh stage 247 in the inside. Next, the substrate 251 on the seventh stage 247 in the third delivery chamber 233 is transferred to the ninth stage 249 in the sixth processing chamber 217 by the third transfer robot 263a. Then, the sixth and seventh gate valves 227 and 228 are closed.
Note that in this embodiment mode, the substrate 251 is once transferred to the seventh stage 247 and then transferred to the ninth stage 249 as described above, but another substrate is processed in the sixth processing chamber 217. Is completed and the sixth processing chamber 217 is empty, the substrate 251 may be directly transferred from the eighth stage 248 to the ninth stage 249.
　次に、第６の処理室２１７のデポダウン方式のＤＣスパッタリング装置によりＺｒＯ２膜５０３上にＰｔ膜５０４を１５０ｎｍの膜厚で成膜する。この際の成膜温度は６５０℃程度である。 Next, a Pt film 504 is formed to a thickness of 150 nm on the ZrO 2 film 503 by using a deposition down type DC sputtering apparatus in the sixth processing chamber 217. The film forming temperature at this time is about 650 ° C.
　この後、第７のゲートバルブ２２８を開き、第３の搬送ロボット２６３ａにより第６の処理室２１７内の第９のステージ２４９上の基板２５１を第３の受渡室２３３内の第７のステージ２４７上に搬送する。そして、第７のゲートバルブ２２８を閉じる。 Thereafter, the seventh gate valve 228 is opened, and the substrate 251 on the ninth stage 249 in the sixth processing chamber 217 is transferred to the seventh stage 247 in the third delivery chamber 233 by the third transfer robot 263a. Carry up. Then, the seventh gate valve 228 is closed.
　次に、第３の受渡室２３３内の図２に示すランプヒータ２０１により４５０℃程度の温度で熱処理を行う。 Next, heat treatment is performed at a temperature of about 450 ° C. by the lamp heater 201 shown in FIG. 2 in the third delivery chamber 233.
　この後、第５のゲートバルブ２２６を開き、第２の搬送ロボット２６２ａにより第３の受渡室２３３内の第７のステージ２４７上の基板２５１を第４の処理室２１５内の第６のステージ２４６上に搬送する。そして、第５のゲートバルブ２２６を閉じる。 Thereafter, the fifth gate valve 226 is opened, and the substrate 251 on the seventh stage 247 in the third delivery chamber 233 is transferred to the sixth stage 246 in the fourth processing chamber 215 by the second transfer robot 262a. Carry up. Then, the fifth gate valve 226 is closed.
　次に、第４の処理室２１５のデポダウン方式のＲＦスパッタリング装置によりＰｔ膜５０４上にＳｒＲｕＯ３膜（ＳＲＯ膜）５０５を７ｎｍ程度の膜厚で成膜する。 Next, an SrRuO 3 film (SRO film) 505 is formed to a thickness of about 7 nm on the Pt film 504 by a deposition down type RF sputtering apparatus in the fourth processing chamber 215.
　この後、第３のゲートバルブ２２４及び第５のゲートバルブ２２６を開き、第２の搬送ロボット２６２ａにより第４の処理室２１５内の第６のステージ２４６上の基板２５１を第２の受渡室２３２内の第４のステージ２４４上に搬送する。次いで、第１の搬送ロボット２６１ａにより第２の受渡室２３２内の第４のステージ２４４上の基板２５１を第２の処理室２１３内の第３のステージ２４３に搬送する。そして、第３及び第５のゲートバルブ２２４，２２６を閉じる。 Thereafter, the third gate valve 224 and the fifth gate valve 226 are opened, and the substrate 251 on the sixth stage 246 in the fourth processing chamber 215 is transferred to the second delivery chamber 232 by the second transfer robot 262a. It is conveyed onto the fourth stage 244 in the inside. Next, the substrate 251 on the fourth stage 244 in the second delivery chamber 232 is transferred to the third stage 243 in the second processing chamber 213 by the first transfer robot 261a. Then, the third and fifth gate valves 224 and 226 are closed.
　次に、第２の処理室２１３の図７に示すデポダウン方式のスパッタリング装置によりＳＲＯ膜５０５上にＰＺＴ膜５０６を１０００ｎｍの膜厚で成膜する。
　なお、第１～第９のステージ２４１～２４９それぞれは、基板を保持する機構を有するものであれば、テーブル状のステージに限定されるものではなく、種々のステージを用いることが可能であり、例えば、図２に示すようなピン上に保持するものでもよい。 Next, a PZT film 506 is formed to a thickness of 1000 nm on the SRO film 505 by the deposition down type sputtering apparatus shown in FIG. 7 in the second treatment chamber 213.
Each of the first to ninth stages 241 to 249 is not limited to a table-like stage as long as it has a mechanism for holding a substrate, and various stages can be used. For example, it may be held on a pin as shown in FIG.
　　８　　フッ化カルシウム
　　９　　放射温度計
　１２　　加圧ライン
　１３　　アルゴンガス供給源
　１４～１６　逆止弁
　１７　フィルタ
　１８　　溝
　１９　　ランプヒータ
　２０　　透明管
　２０ａ　透明管の一方端
　２０ｂ　透明管の他方端
　２１　　チャンバー
　２１ａ　チャンバーの内表面
　２１ｂ　上部内壁
　２４　　バルブ
　２６ａ　第１の筐体
　２６ｂ　第２の筐体
　２７　　レギュレータ
　２８　　Ｏリング
　２９　　酸素ガス供給源
　３０　　フィルタ
　３１～３３　マスフローコントローラ
　３４～３６　バルブ
　３７　　加熱ユニット
　３８　　窒素ガス供給源
　３９　　可変バルブ
　４０　　圧力計
　４１，４２　開放バルブ
　４３　　リークバルブ
　４４　　逆止弁
　４５　　窒素ガス供給源
　４６ａ　フィルタ
　４７～４９　圧力計
　５０　　バルブ
　５１，５２　配管
　５３，５４　レギュレータ
　５３ａ，６９　バルブ
　７０　　真空ポンプ
２０１，２０２　ランプヒータ
２１１　　大気搬送システム
２１１ａ　扉
２１１ｂ　チャンバー
２１２　　第１の処理室
２１３　　第２の処理室
２１４　　第３の処理室
２１５　　第４の処理室
２１６　　第５の処理室
２１７　　第６の処理室
２２１　　ゲートバルブ
２２２　　第１のゲートバルブ
２２３　　第２のゲートバルブ
２２４　　第３のゲートバルブ
２２５　　第４のゲートバルブ
２２６　　第５のゲートバルブ
２２７　　第６のゲートバルブ
２２８　　第７のゲートバルブ
２３１　　第１の受渡室
２３２　　第２の受渡室
２３３　　第３の受渡室
２３３ａ　チャンバー
２４１　　第１のステージ
２４２　　第２のステージ
２４３　　第３のステージ
２４４　　第４のステージ
２４５　　第５のステージ
２４６　　第６のステージ
２４７　　第７のステージ
２４７ａ　第１２のステージ
２４７ｂ　矢印
２４８　　第８のステージ
２４９　　第９のステージ
２５１，２５１ａ　基板
２６１　　第１の搬送室
２６１ａ　第１の搬送ロボット
２６２　　第２の搬送室
２６２ａ　第２の搬送ロボット
２６２ｂ　第２の搬送ロボットの搬送アーム
２６２ｃ　矢印
２６３　　第３の搬送室
２６３ａ　第３の搬送ロボット
２６３ｂ　第３の搬送ロボットの搬送アーム
２６３ｃ　矢印
２７１　　第１の開口
２７２　　第２の開口
２７３　　第３の開口
２７４　　第４の開口
２７５　　第５の開口
３０１　　チャンバー
３０２　　ハロゲンランプヒータ
３０３　　ヒータ電源及び温調器
３０４　　ロータリーセンサー式膜厚モニター
３０５　　クリスタル４枚切替部
３０６　　ＥＢガン
３０７　　蒸着源
３０８　　シャッター
３０９　　駆動部
３１０　　扉
３１１　　オペレータ
４０１　　チャンバー
４０２　　ハロゲンランプヒータ
４０３　　ヒータ電源及び温調器
４０８　　シャッター
４０９　　駆動部
４１０　　放射温度計
４１１　　スパッタリングターゲット
４１２　　パルス状のＲＦ（高周波）
５０１　　Ｓｉの自然酸化膜
５０２　　Ｚｒ膜
５０３　　ＺｒＯ２膜
５０４　　Ｐｔ膜
５０５　　ＳｒＲｕＯ３膜（ＳＲＯ膜）
５０６　　ＰＺＴ膜 8 Calcium fluoride 9 Radiation thermometer 12 Pressurization line 13 Argon gas supply source 14-16 Check valve 17 Filter 18 Groove 19 Lamp heater 20 Transparent tube 20a One end of the transparent tube 20b The other end of the transparent tube 21 Chamber 21a Inner surface 21b Upper inner wall 24 Valve 26a First housing 26b Second housing 27 Regulator 28 O-ring 29 Oxygen gas supply source 30 Filter 31 to 33 Mass flow controller 34 to 36 Valve 37 Heating unit 38 Nitrogen gas supply source 39 Variable Valve 40 Pressure gauge 41, 42 Open valve 43 Leak valve 44 Check valve 45 Nitrogen gas supply source 46a Filter 47-49 Pressure gauge 50 Valve 51, 52 Piping 53, 54 Regulator 53a, 69 Valve 70 Vacuum pump 20 , 202 Lamp heater 211 Atmospheric transfer system 211a Door 211b Chamber 212 First processing chamber 213 Second processing chamber 214 Third processing chamber 215 Fourth processing chamber 216 Fifth processing chamber 217 Sixth processing chamber 221 Gate Valve 222 first gate valve 223 second gate valve 224 third gate valve 225 fourth gate valve 226 fifth gate valve 227 sixth gate valve 228 seventh gate valve 231 first delivery chamber 232 Second delivery chamber 233 Third delivery chamber 233a Chamber 241 First stage 242 Second stage 243 Third stage 244 Fourth stage 245 Fifth stage 246 Sixth stage 247 Seventh stage 247a Second 12 stages 247b arrow 248 8th stage 249 Ninth stage 251, 251a Substrate 261 First transfer chamber 261a First transfer robot 262 Second transfer chamber 262a Second transfer robot 262b Transfer arm 262c of second transfer robot Arrow 263 Third Transfer chamber 263a Third transfer robot 263b Transfer arm 263c of third transfer robot Arrow 271 First opening 272 Second opening 273 Third opening 274 Fourth opening 275 Fifth opening 301 Chamber 302 Halogen lamp heater 303 Heater power source and temperature controller 304 Rotary sensor type film thickness monitor 305 Crystal four-sheet switching unit 306 EB gun 307 Deposition source 308 Shutter 309 Drive unit 310 Door 311 Operator 401 Chamber 402 Halogen lamp heater 403 Heater power source and temperature Adjuster 408 Shutter 409 Drive unit 410 Radiation thermometer 411 Sputtering target 412 Pulsed RF (high frequency)
501 Si natural oxide film 502 Zr film 503 ZrO 2 film 504 Pt film 505 SrRuO 3 film (SRO film)
506 PZT film

Claims (10)

  1. 　第１の受渡室と、
    　前記第１の受渡室内に配置され、基板を保持する第１のステージと、
    　前記第１の受渡室に第１のゲートバルブを介して接続された第１の搬送室と、
    　前記第１の搬送室内に配置された第１の搬送ロボットと、
    　前記第１の搬送室に第２のゲートバルブを介して接続された第１の処理室と、
    　前記第１の処理室内に配置され、前記基板を保持する第２のステージと、
    　前記第１の搬送室に第３のゲートバルブを介して接続された第２の処理室と、
    　前記第２の処理室内に配置され、前記基板を保持する第３のステージと、
    　前記第１の搬送室に第１の開口を介して接続された第２の受渡室と、
    　前記第２の受渡室内に配置され、前記基板を保持する第４のステージと、
    　前記第２の受渡室に第２の開口を介して接続された第２の搬送室と、
    　前記第２の搬送室内に配置された第２の搬送ロボットと、
    　前記第２の搬送室に第４のゲートバルブを介して接続された第３の処理室と、
    　前記第３の処理室内に配置され、前記基板を保持する第５のステージと、
    　前記第２の搬送室に第５のゲートバルブを介して接続された第４の処理室と、
    　前記第４の処理室内に配置され、前記基板を保持する第６のステージと、
    　前記第２の搬送室に第３の開口を介して接続された第３の受渡室と、
    　前記第３の受渡室内に配置され、前記基板を保持する第７のステージと、
    　前記第３の受渡室に第４の開口を介して接続された第３の搬送室と、
    　前記第３の搬送室内に配置された第３の搬送ロボットと、
    　前記第３の搬送室に第６のゲートバルブを介して接続された第５の処理室と、
    　前記第５の処理室内に配置され、前記基板を保持する第８のステージと、
    　前記第３の搬送室に第７のゲートバルブを介して接続された第６の処理室と、
    　前記第６の処理室内に配置され、前記基板を保持する第９のステージと、
    を具備し、
    　前記第１の搬送ロボットは、前記第１のステージと前記第２のステージの間、前記第２のステージと前記第４のステージの間、前記第４のステージと前記第３のステージの間、前記第３のステージと前記第１のステージの間で前記基板を搬送する機能を有し、
    　前記第２の搬送ロボットは、前記第４のステージと前記第５のステージの間、前記第５のステージと前記第７のステージの間、前記第７のステージと前記第６のステージの間、前記第６のステージと前記第４のステージの間で前記基板を搬送する機能を有し、
    　前記第３の搬送ロボットは、前記第７のステージと前記第８のステージの間、前記第８のステージと前記第９のステージの間、前記第９のステージと前記第７のステージの間で前記基板を搬送する機能を有することを特徴とする処理装置。     A first delivery room;
    A first stage disposed in the first delivery chamber and holding a substrate;
    A first transfer chamber connected to the first delivery chamber via a first gate valve;
    A first transfer robot disposed in the first transfer chamber;
    A first processing chamber connected to the first transfer chamber via a second gate valve;
    A second stage disposed in the first processing chamber and holding the substrate;
    A second processing chamber connected to the first transfer chamber via a third gate valve;
    A third stage disposed in the second processing chamber and holding the substrate;
    A second delivery chamber connected to the first transfer chamber via a first opening;
    A fourth stage disposed in the second delivery chamber and holding the substrate;
    A second transfer chamber connected to the second delivery chamber via a second opening;
    A second transfer robot disposed in the second transfer chamber;
    A third processing chamber connected to the second transfer chamber via a fourth gate valve;
    A fifth stage disposed in the third processing chamber and holding the substrate;
    A fourth processing chamber connected to the second transfer chamber via a fifth gate valve;
    A sixth stage disposed in the fourth processing chamber and holding the substrate;
    A third delivery chamber connected to the second transfer chamber via a third opening;
    A seventh stage disposed in the third delivery chamber and holding the substrate;
    A third transfer chamber connected to the third delivery chamber via a fourth opening;
    A third transfer robot disposed in the third transfer chamber;
    A fifth processing chamber connected to the third transfer chamber via a sixth gate valve;
    An eighth stage disposed in the fifth processing chamber and holding the substrate;
    A sixth treatment chamber connected to the third transfer chamber via a seventh gate valve;
    A ninth stage disposed in the sixth processing chamber and holding the substrate;
    Comprising
    The first transfer robot is between the first stage and the second stage, between the second stage and the fourth stage, between the fourth stage and the third stage, Having a function of transporting the substrate between the third stage and the first stage;
    The second transfer robot is between the fourth stage and the fifth stage, between the fifth stage and the seventh stage, between the seventh stage and the sixth stage, Having a function of transporting the substrate between the sixth stage and the fourth stage;
    The third transfer robot is provided between the seventh stage and the eighth stage, between the eighth stage and the ninth stage, and between the ninth stage and the seventh stage. A processing apparatus having a function of transporting the substrate.
  2. 　請求項１において、
    　前記第１の受渡室内に配置され、前記基板を保持する第１０のステージと、
    　前記第２の受渡室内に配置され、前記基板を保持する第１１のステージと、
    　前記第３の受渡室内に配置され、前記基板を保持する第１２のステージと、
    を有することを特徴とする処理装置。     In claim 1,
    A tenth stage disposed in the first delivery chamber and holding the substrate;
    An eleventh stage disposed in the second delivery chamber and holding the substrate;
    A twelfth stage disposed in the third delivery chamber and holding the substrate;
    A processing apparatus comprising:
  3. 　請求項１または２において、
    　前記第１の受渡室、前記第２の受渡室及び前記第３の受渡室の少なくとも一つに配置された前記基板を加熱するヒータを有することを特徴とする処理装置。     In claim 1 or 2,
    A processing apparatus comprising a heater for heating the substrate disposed in at least one of the first delivery chamber, the second delivery chamber, and the third delivery chamber.
  4. 　請求項１乃至３のいずれか一項において、
    　前記第１の処理室は、前記第２のステージに保持された前記基板に蒸着法により膜を成膜する処理室であることを特徴とする処理装置。     In any one of Claims 1 thru | or 3,
    The processing apparatus, wherein the first processing chamber is a processing chamber for forming a film by vapor deposition on the substrate held by the second stage.
  5. 　請求項４において、
    　前記第１の処理室と前記第３の処理室の間の距離は５００ｍｍ以下であり、
    　前記第３の処理室と前記第５の処理室の間の距離は５００ｍｍ以下であり、
    　前記第２の処理室と前記第４の処理室の間の距離は５００ｍｍ以下であり、
    　前記第４の処理室と前記第６の処理室の間の距離は５００ｍｍ以下であることを特徴とする処理装置。     In claim 4,
    The distance between the first processing chamber and the third processing chamber is 500 mm or less,
    The distance between the third processing chamber and the fifth processing chamber is 500 mm or less,
    The distance between the second processing chamber and the fourth processing chamber is 500 mm or less,
    The processing apparatus characterized in that a distance between the fourth processing chamber and the sixth processing chamber is 500 mm or less.
  6. 　請求項４または５において、
    　前記第３の処理室内に加圧されたガスを導入するガス導入機構と、
    　前記第３の処理室内のガスを排気するガス排気機構と、
    　前記第５のステージに保持された前記基板にランプ光を照射するランプヒータと、
    を具備することを特徴とする処理装置。     In claim 4 or 5,
    A gas introduction mechanism for introducing pressurized gas into the third processing chamber;
    A gas exhaust mechanism for exhausting the gas in the third processing chamber;
    A lamp heater for irradiating the substrate held on the fifth stage with lamp light;
    A processing apparatus comprising:
  7. 　請求項６において、
    　前記第１の処理室で成膜される前記膜はＺｒ膜であり、
    　前記第３の処理室内に導入される前記ガスは酸素であり、
    　前記第５の処理室は、前記第８のステージに保持された前記基板を反転させる機構を有し、
    　前記第６の処理室は、前記第９のステージに保持された前記基板にスパッタリングによりＰｔ膜を成膜する処理室であり、
    　前記第３の受渡室に配置された前記基板を加熱するヒータを有し、
    　前記第４の処理室は、前記第６のステージに保持された前記基板にスパッタリングによりＳＲＯ膜を成膜する処理室であり、
    　前記第２の処理室は、前記第３のステージに保持された前記基板にスパッタリングによりＰＺＴ膜を成膜する処理室であることを特徴とする処理装置。     In claim 6,
    The film formed in the first processing chamber is a Zr film;
    The gas introduced into the third processing chamber is oxygen;
    The fifth processing chamber has a mechanism for inverting the substrate held on the eighth stage,
    The sixth processing chamber is a processing chamber for forming a Pt film on the substrate held on the ninth stage by sputtering,
    A heater for heating the substrate disposed in the third delivery chamber;
    The fourth processing chamber is a processing chamber for forming an SRO film on the substrate held on the sixth stage by sputtering,
    The processing apparatus is characterized in that the second processing chamber is a processing chamber for forming a PZT film on the substrate held by the third stage by sputtering.
  8. 　請求項７において、
    　前記第１の処理室内で前記第２のステージに保持された前記基板上にＺｒ膜が成膜され、
    　前記第３の処理室内で加圧酸素雰囲気により前記Ｚｒ膜に前記ランプ光を照射することで、前記Ｚｒ膜の一部を酸化させ、Ｚｒ膜とＺｒＯ２膜の積層膜を形成することを特徴とする処理装置。     In claim 7,
    A Zr film is formed on the substrate held on the second stage in the first processing chamber,
    By irradiating the Zr film with the lamp light in a pressurized oxygen atmosphere in the third processing chamber, a part of the Zr film is oxidized to form a stacked film of the Zr film and the ZrO 2 film. A processing device.
  9. 　請求項１乃至８のいずれか一項において、
    　前記第３の搬送室には第５の開口が形成され、前記第５の開口が蓋により塞がれていることを特徴とする処理装置。     In any one of Claims 1 thru | or 8,
    A processing apparatus, wherein a fifth opening is formed in the third transfer chamber, and the fifth opening is closed by a lid.
  10. 　第３の処理室と、
    　前記第３の処理室内に配置され、Ｚｒ膜が成膜された基板を保持する第５のステージと、
    　前記第３の処理室内に加圧された酸素ガスを導入するガス導入機構と、
    　前記第３の処理室内のガスを排気するガス排気機構と、
    　前記第５のステージに保持された前記基板にランプ光を照射するランプヒータと、
    を具備し、
    　加圧酸素雰囲気で前記Ｚｒ膜に前記ランプ光を照射することで、前記Ｚｒ膜の一部を酸化させ、Ｚｒ膜とＺｒＯ２膜の積層膜を形成することを特徴とする処理装置。     A third processing chamber;
    A fifth stage disposed in the third processing chamber and holding a substrate on which a Zr film is formed;
    A gas introduction mechanism for introducing pressurized oxygen gas into the third processing chamber;
    A gas exhaust mechanism for exhausting the gas in the third processing chamber;
    A lamp heater for irradiating the substrate held on the fifth stage with lamp light;
    Comprising
    A processing apparatus, wherein the Zr film is irradiated with the lamp light in a pressurized oxygen atmosphere to oxidize a part of the Zr film to form a laminated film of a Zr film and a ZrO 2 film.
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