JP2021111786A - 基板処理方法及び基板処理装置 - Google Patents
基板処理方法及び基板処理装置 Download PDFInfo
- Publication number
- JP2021111786A JP2021111786A JP2020214751A JP2020214751A JP2021111786A JP 2021111786 A JP2021111786 A JP 2021111786A JP 2020214751 A JP2020214751 A JP 2020214751A JP 2020214751 A JP2020214751 A JP 2020214751A JP 2021111786 A JP2021111786 A JP 2021111786A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- valve
- pressure chamber
- fluid
- processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B13/00—Accessories or details of general applicability for machines or apparatus for cleaning
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0021—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by liquid gases or supercritical fluids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02101—Cleaning only involving supercritical fluids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67742—Mechanical parts of transfer devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67167—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Robotics (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
560 流体供給ユニット
561、562、563 供給ライン
581 第1開閉バルブ
582 第2開閉バルブ
583 第3開閉バルブ
610 流体供給源
Claims (13)
- 基板を処理する装置において、
基板に液を供給して基板を液処理する液処理チャンバーと、
工程流体を利用して基板を処理する工程が遂行される処理空間が提供される高圧チャンバーと、
前記高圧チャンバーに前記工程流体を提供する流体供給源と、
前記高圧チャンバーと前記流体供給源をつなぐ供給ラインと、
前記供給ラインに前記流体供給源で前記高圧チャンバー方向に順に設置される第1開閉バルブ及び第2開閉バルブと、
前記第1開閉バルブと前記第2開閉バルブとの間に提供され、排気ラインと連結される分岐ラインと、
前記分岐ラインに設置された第3開閉バルブと、
前記高圧チャンバー内の前記工程流体を排気する排気ユニットと、
前記液処理チャンバーと前記高圧チャンバーに対して基板を搬送する搬送ロボットと、
制御器と、を含み、
前記制御器は、
前記搬送ロボットが前記高圧チャンバーに基板を搬入して前記基板に対する処理が行われる前、
前記第1開閉バルブを開放し、前記第2開閉バルブ及び前記第3開閉バルブを閉鎖した状態の第1作動状態と、
前記第1開閉バルブ及び前記第2開閉バルブを閉鎖し、前記第3開閉バルブを開放して前記供給ラインの内部に残存する工程流体を排出する第2作動状態を行うように制御する基板処理装置。 - 基板を処理する装置において、
基板に処理液を供給して基板を液処理する液処理チャンバーと、
工程流体を利用して基板を処理する工程が遂行される処理空間が提供される高圧チャンバーと、
前記高圧チャンバーに前記工程流体を提供する流体供給源と、
前記高圧チャンバーと前記流体供給源をつなぐ供給ラインと、
前記供給ラインに前記流体供給源で前記高圧チャンバー方向に順に設置される第1開閉バルブ及び第2開閉バルブと、
前記第1開閉バルブと前記第2開閉バルブとの間に提供され、排気ラインと連結される分岐ラインと、
前記分岐ラインに設置された第3開閉バルブと、
前記高圧チャンバー内の前記工程流体を排気する排気ユニットと、
前記液処理チャンバーと前記高圧チャンバーに対して基板を搬送する搬送ロボットと、
制御器と、を含み、
前記制御器は、
前記搬送ロボットが前記高圧チャンバーに基板が搬入して前記基板に対する処理が行われる前、
前記第1開閉バルブ及び前記第2開閉バルブを開放し、前記第3開閉バルブを閉鎖した状態の第1作動状態と、
前記第1開閉バルブ及び前記第2開閉バルブを閉鎖し、前記第3開閉バルブを開放して前記供給ラインの内部に残存する工程流体を排出する第2作動状態を行うように制御する基板処理装置。 - 前記制御器は、
前記第1作動状態と前記第2作動状態が複数回繰り返されて行われるように制御する請求項1又は請求項2に記載の基板処理装置。 - 前記制御器は、
前記液処理チャンバーで前記基板が液処理される間に、前記第1作動状態と前記第2作動状態を行うように制御する請求項1又は請求項2に記載の基板処理装置。 - 前記第3開閉バルブの開放に応じて前記供給ライン内の圧力は、大気圧まで減圧される請求項1又は請求項2に記載の基板処理装置。
- 前記高圧チャンバーは、前記工程流体を超臨界相にして基板を処理する請求項1又は請求項2に記載の基板処理装置。
- 前記工程流体は、二酸化炭素である請求項1又は請求項2に記載の基板処理装置。
- 前記流体供給源は、前記高圧チャンバーに前記工程流体を超臨界相に供給する請求項1又は請求項2に記載の基板処理装置。
- 基板処理装置を利用して基板を処理する方法において、
前記基板処理装置は、
基板に処理液を供給して基板を液処理する液処理チャンバーと、
工程流体を利用して基板を処理する工程が遂行される処理空間が提供される高圧チャンバーと、
前記高圧チャンバーに前記工程流体を提供する流体供給源と、
前記高圧チャンバーと前記流体供給源をつなぐ供給ラインと、
前記供給ラインに前記流体供給源で前記高圧チャンバー方向に順に設置される第1開閉バルブ及び第2開閉バルブと、
前記第1開閉バルブと前記第2開閉バルブとの間に提供され、排気ラインと連結される分岐ラインと、
前記分岐ラインに設置された第3開閉バルブと、
前記高圧チャンバー内の前記工程流体を排気する排気ユニットと、
前記液処理チャンバーと前記高圧チャンバーに対して基板を搬送する搬送ロボットと、を含み、
基板に対する処理を行うために前記搬送ロボットが前記高圧チャンバーに基板を搬入する前、
前記第1開閉バルブを開放し、前記第2開閉バルブ及び前記第3開閉バルブを閉鎖した状態の第1作動状態と、
前記第1開閉バルブ及び前記第2開閉バルブを閉鎖し、前記第3開閉バルブを開放して前記供給ラインの内部に残存する工程流体を排出する第2作動状態と、を行う基板処理方法。 - 基板処理装置を利用して基板を処理する方法において、
前記基板処理装置は、
基板に処理液を供給して基板を液処理する液処理チャンバーと、
工程流体を利用して基板を処理する工程が遂行される処理空間が提供される高圧チャンバーと、
前記高圧チャンバーに前記工程流体を提供する流体供給源と、
前記高圧チャンバーと前記流体供給源をつなぐ供給ラインと、
前記供給ラインに前記流体供給源で前記高圧チャンバー方向に順に設置される第1開閉バルブ及び第2開閉バルブと、
前記第1開閉バルブと前記第2開閉バルブとの間に提供され、排気ラインと連結される分岐ラインと、
前記分岐ラインに設置された第3開閉バルブと、
前記高圧チャンバー内の前記工程流体を排気する排気ユニットと、
前記液処理チャンバーと前記高圧チャンバーに対して基板を搬送する搬送ロボットと、を含み、
基板に対する処理を行うために前記搬送ロボットが前記高圧チャンバーに基板を搬入する前、
前記第1開閉バルブ及び前記第2開閉バルブを開放し、前記第3開閉バルブを閉鎖した状態の第1作動状態と、
前記第1開閉バルブ及び前記第2開閉バルブを閉鎖し、前記第3開閉バルブを開放して前記供給ラインの内部に残存する工程流体を排出する第2作動状態と、を行う基板処理方法。 - 前記第1作動状態と前記第2作動状態を複数回繰り返して行う請求項9又は請求項10に記載の基板処理方法。
- 前記液処理チャンバーで前記基板が液処理される間に、前記第1作動状態と前記第2作動状態を行う請求項9又は請求項10に記載の基板処理方法。
- 前記工程流体は、二酸化炭素である請求項9又は請求項10に記載の基板処理方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020190179294A KR102341173B1 (ko) | 2019-12-31 | 2019-12-31 | 기판 처리 방법 및 기판 처리 장치 |
KR10-2019-0179294 | 2019-12-31 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2021111786A true JP2021111786A (ja) | 2021-08-02 |
JP7236428B2 JP7236428B2 (ja) | 2023-03-09 |
Family
ID=76545615
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020214751A Active JP7236428B2 (ja) | 2019-12-31 | 2020-12-24 | 基板処理方法及び基板処理装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US12027381B2 (ja) |
JP (1) | JP7236428B2 (ja) |
KR (1) | KR102341173B1 (ja) |
CN (1) | CN113130352A (ja) |
TW (1) | TWI769623B (ja) |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007175559A (ja) * | 2005-12-27 | 2007-07-12 | Dainippon Screen Mfg Co Ltd | 高圧処理装置および高圧処理方法 |
JP2007234862A (ja) * | 2006-03-01 | 2007-09-13 | Dainippon Screen Mfg Co Ltd | 高圧処理装置および高圧処理方法 |
JP2012114361A (ja) * | 2010-11-26 | 2012-06-14 | Tokyo Electron Ltd | 基板処理装置、基板処理方法及び記憶媒体 |
JP2013012538A (ja) * | 2011-06-28 | 2013-01-17 | Tokyo Electron Ltd | 基板処理装置、基板処理方法および記憶媒体 |
JP2013251547A (ja) * | 2012-05-31 | 2013-12-12 | Semes Co Ltd | 基板処理装置及び基板処理方法 |
US10109506B2 (en) * | 2016-05-26 | 2018-10-23 | Semes Co., Ltd. | Unit for supplying fluid, apparatus and method for treating substrate with the unit |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100929364B1 (ko) | 2003-05-26 | 2009-12-02 | 주식회사 케이씨텍 | 초임계 세정장치 및 방법 |
JP5235734B2 (ja) | 2009-03-12 | 2013-07-10 | 東京エレクトロン株式会社 | 基板洗浄方法 |
KR20110062520A (ko) * | 2009-12-03 | 2011-06-10 | 세메스 주식회사 | 기판 처리장치 및 이의 세정 방법 |
KR101536724B1 (ko) * | 2012-05-31 | 2015-07-16 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
KR101964655B1 (ko) | 2016-06-02 | 2019-04-04 | 세메스 주식회사 | 기판 처리 장치 및 방법 |
JP6803737B2 (ja) | 2016-12-07 | 2020-12-23 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
KR102158232B1 (ko) * | 2017-06-30 | 2020-09-21 | 주식회사 케이씨텍 | 기판 처리 장치 및 기판 처리 방법 |
-
2019
- 2019-12-31 KR KR1020190179294A patent/KR102341173B1/ko active IP Right Grant
-
2020
- 2020-12-18 TW TW109144816A patent/TWI769623B/zh active
- 2020-12-24 JP JP2020214751A patent/JP7236428B2/ja active Active
- 2020-12-29 US US17/137,181 patent/US12027381B2/en active Active
- 2020-12-31 CN CN202011630293.3A patent/CN113130352A/zh active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007175559A (ja) * | 2005-12-27 | 2007-07-12 | Dainippon Screen Mfg Co Ltd | 高圧処理装置および高圧処理方法 |
JP2007234862A (ja) * | 2006-03-01 | 2007-09-13 | Dainippon Screen Mfg Co Ltd | 高圧処理装置および高圧処理方法 |
JP2012114361A (ja) * | 2010-11-26 | 2012-06-14 | Tokyo Electron Ltd | 基板処理装置、基板処理方法及び記憶媒体 |
JP2013012538A (ja) * | 2011-06-28 | 2013-01-17 | Tokyo Electron Ltd | 基板処理装置、基板処理方法および記憶媒体 |
JP2013251547A (ja) * | 2012-05-31 | 2013-12-12 | Semes Co Ltd | 基板処理装置及び基板処理方法 |
US10109506B2 (en) * | 2016-05-26 | 2018-10-23 | Semes Co., Ltd. | Unit for supplying fluid, apparatus and method for treating substrate with the unit |
Also Published As
Publication number | Publication date |
---|---|
US12027381B2 (en) | 2024-07-02 |
US20210202271A1 (en) | 2021-07-01 |
KR102341173B1 (ko) | 2021-12-21 |
TW202126397A (zh) | 2021-07-16 |
CN113130352A (zh) | 2021-07-16 |
JP7236428B2 (ja) | 2023-03-09 |
TWI769623B (zh) | 2022-07-01 |
KR20210086872A (ko) | 2021-07-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN108074844B (zh) | 基板处理装置、基板处理方法以及存储介质 | |
TWI720261B (zh) | 基板處理裝置、基板處理方法及記錄媒體 | |
US10109506B2 (en) | Unit for supplying fluid, apparatus and method for treating substrate with the unit | |
KR101524334B1 (ko) | 액처리 장치, 액처리 방법 및 이 액처리 방법을 실행하기 위한 컴퓨터 프로그램이 기록된 기록 매체 | |
JP7246351B2 (ja) | 基板処理設備及び基板処理方法 | |
KR20110112195A (ko) | 기판 처리 장치, 기판 처리 방법 및 기억 매체 | |
JP7330234B2 (ja) | 基板処理装置及び方法 | |
KR20200044240A (ko) | 기판 처리 방법 및 기판 처리 장치 | |
JP2021111786A (ja) | 基板処理方法及び基板処理装置 | |
KR102292034B1 (ko) | 기판 처리 장치 및 기판 처리 장치의 처리 방법 | |
US20220090859A1 (en) | Apparatus and method for treating substrate | |
KR102218377B1 (ko) | 기판 처리 장치 및 기판 처리 방법 | |
JP2021015971A (ja) | 流体供給ユニット及びこれを有する基板処理装置 | |
KR102606621B1 (ko) | 기판 처리 장치 및 기판 처리 방법 | |
KR102387280B1 (ko) | 기판 처리 장치 및 방법 | |
KR102603680B1 (ko) | 기판 처리 장치 및 기판 처리 방법 | |
JP7104190B2 (ja) | 基板処理装置 | |
US20200027724A1 (en) | Apparatus and method for treating substrate | |
KR20240102706A (ko) | 기판 처리 장치 | |
KR20220132084A (ko) | 기판 처리 장치 및 기판 처리 방법 | |
KR20220054494A (ko) | 유체 공급 유닛 및 기판 처리 장치 | |
KR20240108332A (ko) | 기판 처리 장치 | |
KR20210021332A (ko) | 기판 처리 장치 및 기판 처리 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20210922 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20221101 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230118 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20230131 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20230227 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7236428 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |