JP2021103772A - 半導体素子及びその製造方法 - Google Patents
半導体素子及びその製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 57
- 238000000034 method Methods 0.000 title abstract description 17
- 238000004519 manufacturing process Methods 0.000 title abstract description 16
- 229910052751 metal Inorganic materials 0.000 claims abstract description 193
- 239000002184 metal Substances 0.000 claims abstract description 189
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 39
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 39
- 239000001301 oxygen Substances 0.000 claims abstract description 39
- 239000003990 capacitor Substances 0.000 claims abstract description 35
- 239000012535 impurity Substances 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 22
- 229910052712 strontium Inorganic materials 0.000 claims description 17
- 229910052788 barium Inorganic materials 0.000 claims description 15
- 229910052719 titanium Inorganic materials 0.000 claims description 12
- 229910052791 calcium Inorganic materials 0.000 claims description 11
- 229910052726 zirconium Inorganic materials 0.000 claims description 10
- 229910052746 lanthanum Inorganic materials 0.000 claims description 8
- 229910052741 iridium Inorganic materials 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 229910052735 hafnium Inorganic materials 0.000 claims description 5
- 238000000926 separation method Methods 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 4
- 239000012528 membrane Substances 0.000 claims 1
- 239000010408 film Substances 0.000 description 106
- 239000010410 layer Substances 0.000 description 99
- 230000006870 function Effects 0.000 description 24
- 125000004430 oxygen atom Chemical group O* 0.000 description 24
- 238000007740 vapor deposition Methods 0.000 description 17
- 150000001875 compounds Chemical class 0.000 description 15
- 125000006850 spacer group Chemical group 0.000 description 15
- 238000003860 storage Methods 0.000 description 13
- 230000015572 biosynthetic process Effects 0.000 description 12
- 238000010926 purge Methods 0.000 description 12
- 238000010438 heat treatment Methods 0.000 description 11
- 238000010586 diagram Methods 0.000 description 10
- 238000005530 etching Methods 0.000 description 10
- -1 ZrO 2 Chemical class 0.000 description 9
- 230000002265 prevention Effects 0.000 description 9
- 239000010936 titanium Substances 0.000 description 9
- 239000007789 gas Substances 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- 239000012159 carrier gas Substances 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000009413 insulation Methods 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 239000002356 single layer Substances 0.000 description 5
- 238000000427 thin-film deposition Methods 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 239000003446 ligand Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 229910052707 ruthenium Inorganic materials 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910016062 BaRuO Inorganic materials 0.000 description 1
- 229910004542 HfN Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910004121 SrRuO Inorganic materials 0.000 description 1
- 229910004491 TaAlN Inorganic materials 0.000 description 1
- 229910004166 TaN Inorganic materials 0.000 description 1
- 229910004200 TaSiN Inorganic materials 0.000 description 1
- 229910010037 TiAlN Inorganic materials 0.000 description 1
- 229910010060 TiBN Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 229910010282 TiON Inorganic materials 0.000 description 1
- 229910008482 TiSiN Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 229910008322 ZrN Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- QRXWMOHMRWLFEY-UHFFFAOYSA-N isoniazide Chemical compound NNC(=O)C1=CC=NC=C1 QRXWMOHMRWLFEY-UHFFFAOYSA-N 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
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- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer
-
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
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Abstract
Description
前記第1層は前記第1金属元素と酸素を含み、前記第2層は前記第2金属元素と酸素を含み、前記誘電膜と接する前記下部電極の第1接触面は前記第2層である。
30 誘電膜
50 上部電極
IF 界面
CS1,CS2 接触面
Claims (20)
- 下部電極、上部電極、及び前記下部電極と前記上部電極との間の誘電膜を含むキャパシタを含み、
前記下部電極は、ABO3を含み、前記Aは、第1金属元素であり、前記Bは、前記第1金属元素より仕事関数が大きい第2金属元素であり、
前記誘電膜は、CDO3を含み、前記Cは、第3金属元素であり、前記Dは、第4金属元素であり、
前記下部電極は、第1層と第2層が交互に繰り返され、前記第1層は、前記第1金属元素と酸素を含み、前記第2層は、前記第2金属元素と酸素を含み、
前記誘電膜と接する前記下部電極の第1接触面は前記第2層である半導体素子。 - 前記第1接触面は、{100}結晶面である、請求項1に記載の半導体素子。
- 前記下部電極及び前記誘電膜は、各々ペロブスカイト構造を有する、請求項1又は2に記載の半導体素子。
- 前記誘電膜は、第3層と第4層が交互に繰り返され、前記第3層は、前記第3金属元素と酸素を含み、前記第4層は、前記第4金属元素と酸素を含み、
前記下部電極と接する前記誘電膜の第2接触面は、前記第3層である、請求項1乃至3のいずれか一項に記載の半導体素子。 - 前記第4金属元素は、前記第3金属元素より仕事関数が大きい、請求項4に記載の半導体素子。
- 前記第2金属元素は、前記第4金属元素より仕事関数が大きい、請求項1に記載の半導体素子。
- 前記第2金属元素の仕事関数は、4.5eVより大きく6eVより小さい、請求項1に記載の半導体素子。
- 前記第1金属元素は、Sr、Ba、La、及びCaの中の少なくとも1つである、請求項1に記載の半導体素子。
- 前記第2金属元素は、Ru、Mo、Ir、Co、及びNiの中の少なくとも1つである、請求項1に記載の半導体素子。
- 前記第3金属元素は、Ba、Sr、及びCaの中の少なくとも1つである、請求項1に記載の半導体素子。
- 前記第4金属元素は、Ti、Zr、及びHfの中の少なくとも1つである、請求項1に記載の半導体素子。
- 前記下部電極の厚さは、約50Å乃至約100Åである、請求項1に記載の半導体素子。
- 前記キャパシタは、ベース電極をさらに含み、
前記下部電極は、前記ベース電極の側壁及び上面を覆う、請求項1に記載の半導体素子。 - 下部電極、上部電極、及び前記下部電極と前記上部電極との間の誘電膜を含むキャパシタを含み、
前記下部電極は、第1金属元素、第2金属元素、及び酸素を含み、
前記誘電膜は、第3金属元素、第4金属元素、及び酸素を含み、
前記下部電極は、第1層と第2層が交互に繰り返され、前記第1層は、前記第1金属元素と酸素を含み、前記第2層は、前記第2金属元素と酸素を含み、
前記第1金属元素は、Sr、Ba、La、及びCaの中の少なくとも1つであり、前記第2金属元素は、Ru、Mo、Ir、Co、及びNiの中の少なくとも1つであり、
前記誘電膜と接する前記下部電極の第1接触面は、前記第2層である、請求項1に記載の半導体素子。 - 前記誘電膜は、第3層と第4層が交互に繰り返され、前記第3層は、前記第3金属元素と酸素を含み、前記第4層は、前記第4金属元素と酸素を含み、
前記下部電極と接する前記誘電膜の第2接触面は、前記第3層と前記第4層の中で仕事関数が小さい層である、請求項14に記載の半導体素子。 - 前記第3金属元素は、Ba、Sr、及びCaの中の少なくとも1つであり、
前記第4金属元素はTi、Zr、及びHfの中の少なくとも1つである、請求項14に記載の半導体素子。 - 前記キャパシタは、ベース電極をさらに含み、
前記下部電極は、前記ベース電極の側壁及び上面を覆う、請求項14に記載の半導体素子。 - 基板の上部に埋め込まれ、第1方向に延長される第1導電ラインと、
素子分離膜によって前記基板の上部に定義され、前記第1導電ラインを介して分離された第1不純物領域及び第2不純物領域を含む活性領域と、
前記基板上で前記第1方向と交差する第2方向に延長され、前記第1不純物領域と連結される第2導電ラインと、
前記第2不純物領域に連結されるコンタクトと、
前記コンタクトを通じて前記第2不純物領域に連結されるキャパシタと、を含み、
前記キャパシタは、下部電極、上部電極、及び前記下部電極と前記上部電極との間の誘電膜を含み、
前記下部電極は、ABO3を含み、前記Aは、第1金属元素であり、前記Bは、前記第1金属元素より仕事関数が大きい第2金属元素であり、
前記誘電膜は、CDO3を含み、前記Cは、第3金属元素であり、前記Dは、第4金属元素であり、
前記下部電極は、第1層と第2層が交互に繰り返され、前記第1層は、前記第1金属元素と酸素を含み、前記第2層は、前記第2金属元素と酸素を含み、
前記誘電膜と接する前記下部電極の第1接触面は、前記第2層である、半導体素子。 - 前記誘電膜は、第3層と第4層が交互に繰り返され、前記第3層は、前記第3金属元素と酸素を含み、前記第4層は、前記第4金属元素と酸素を含み、
前記第4金属元素は、前記第3金属元素より仕事関数が大きい、請求項18に記載の半導体素子。 - 前記第1金属元素は、Sr、Ba、La、及びCaの中の少なくとも1つであり、
前記第2金属元素は、Ru、Mo、Ir、Co、及びNiの中の少なくとも1つであり、
前記第3金属元素は、Ba、Sr、及びCaの中の少なくとも1つであり、
前記第4金属元素は、Ti、Zr、及びHfの中の少なくとも1つである、請求項18に記載の半導体素子。
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Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000269424A (ja) * | 1999-03-17 | 2000-09-29 | Toshiba Corp | 半導体装置及びその製造方法 |
US20170352666A1 (en) * | 2016-06-02 | 2017-12-07 | Samsung Electronics Co., Ltd. | Semiconductor device and method of manufacturing the same |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07111318A (ja) | 1993-10-12 | 1995-04-25 | Olympus Optical Co Ltd | 強誘電体メモリ |
KR100230418B1 (ko) * | 1997-04-17 | 1999-11-15 | 윤종용 | 백금족 금속층 형성방법 및 이를 이용한 커패시터 제조방법 |
JP2001077326A (ja) | 1999-08-31 | 2001-03-23 | Toshiba Corp | 半導体装置およびその製造方法 |
JP2001284542A (ja) | 2000-03-30 | 2001-10-12 | Seiko Epson Corp | 強誘電体メモリ素子 |
JP2003243536A (ja) | 2002-02-15 | 2003-08-29 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
JP2003264188A (ja) | 2002-03-12 | 2003-09-19 | Matsushita Electric Ind Co Ltd | 成膜方法 |
US8049423B2 (en) * | 2008-07-25 | 2011-11-01 | Samsung Sdi Co., Ltd. | Plasma display panel with improved luminance and low power consumption |
US20100068509A1 (en) | 2008-09-17 | 2010-03-18 | Nanochip, Inc. | Media having improved surface smoothness and methods for making the same |
KR102322960B1 (ko) * | 2015-07-15 | 2021-11-05 | 삼성전자주식회사 | 반도체 소자 제조 방법 |
US10074505B2 (en) | 2016-01-14 | 2018-09-11 | Wisconsin Alumni Research Foundation | Perovskites as ultra-low work function electron emission materials |
US11062902B2 (en) | 2016-08-16 | 2021-07-13 | Ramot At Tel-Aviv University Ltd. | Heterostructure system and method of fabricating the same |
-
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Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000269424A (ja) * | 1999-03-17 | 2000-09-29 | Toshiba Corp | 半導体装置及びその製造方法 |
US20170352666A1 (en) * | 2016-06-02 | 2017-12-07 | Samsung Electronics Co., Ltd. | Semiconductor device and method of manufacturing the same |
Non-Patent Citations (1)
Title |
---|
YEONG JAE SHIN, ET AL.: "Interface Control of Ferroelectricity in an SrRuO3/BaTiO3/SrRuO3 Capacitor and its Critical Thicknes", ADVANCED MATERIALS, vol. 29, no. 1602795, JPN7023001264, 2017, pages 1 - 6, ISSN: 0005027548 * |
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US11804518B2 (en) | 2023-10-31 |
KR20210082310A (ko) | 2021-07-05 |
EP3843164A1 (en) | 2021-06-30 |
CN113036037A (zh) | 2021-06-25 |
JP7354088B2 (ja) | 2023-10-02 |
US20240030277A1 (en) | 2024-01-25 |
US20210193457A1 (en) | 2021-06-24 |
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