JP2021086958A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP2021086958A JP2021086958A JP2019215692A JP2019215692A JP2021086958A JP 2021086958 A JP2021086958 A JP 2021086958A JP 2019215692 A JP2019215692 A JP 2019215692A JP 2019215692 A JP2019215692 A JP 2019215692A JP 2021086958 A JP2021086958 A JP 2021086958A
- Authority
- JP
- Japan
- Prior art keywords
- region
- electrode
- semiconductor element
- solder layer
- conductor plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 98
- 239000004020 conductor Substances 0.000 claims abstract description 63
- 229910000679 solder Inorganic materials 0.000 claims abstract description 62
- 230000008646 thermal stress Effects 0.000 abstract description 10
- 125000006850 spacer group Chemical group 0.000 description 20
- 238000007789 sealing Methods 0.000 description 12
- 239000002184 metal Substances 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 230000001681 protective effect Effects 0.000 description 7
- 238000007747 plating Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
- H01L2224/331—Disposition
- H01L2224/3318—Disposition being disposed on at least two different sides of the body, e.g. dual array
- H01L2224/33181—On opposite sides of the body
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
12:半導体素子
12a:上面
12b、12c:素子電極
14:導体スペーサ
14a:上面
14b:下面
16、18:導体板
20:封止体
22、24、26:はんだ層
A1:第1領域
A2:第2領域
Ab:接合領域
Ae:電極領域
d1:第1方向
d2:第2方向
W1:第1領域の幅寸法
W2:第2領域の幅寸法
Claims (1)
- 上面に電極を有する半導体素子と、
下面が前記電極にはんだ層を介して接合された導体板と、
を備え、
前記半導体素子の前記上面は、前記電極が露出する電極領域と、前記電極領域を分断しながら第1方向に沿って延びる第1領域とを有し、前記第1領域は前記電極領域よりもはんだ濡れ性が低く、
前記導体板の前記下面は、前記電極領域に前記はんだ層を介して接合された接合領域と、前記接合領域を分断しながら前記第1方向に沿って延びる第2領域とを有し、前記第2領域は前記接合領域よりもはんだ濡れ性が低く、
前記第1領域と前記第2領域とは互いに対向し、それらの間で前記はんだ層が分断されており、
前記第1方向に垂直な第2方向において、前記第2領域の寸法は、前記第1領域の寸法よりも大きい、
半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019215692A JP7310571B2 (ja) | 2019-11-28 | 2019-11-28 | 半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019215692A JP7310571B2 (ja) | 2019-11-28 | 2019-11-28 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2021086958A true JP2021086958A (ja) | 2021-06-03 |
JP7310571B2 JP7310571B2 (ja) | 2023-07-19 |
Family
ID=76088424
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019215692A Active JP7310571B2 (ja) | 2019-11-28 | 2019-11-28 | 半導体装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP7310571B2 (ja) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006203096A (ja) * | 2005-01-24 | 2006-08-03 | Matsushita Electric Ind Co Ltd | 実装体およびその製造方法 |
JP2009200250A (ja) * | 2008-02-21 | 2009-09-03 | Nec Corp | 半導体素子の実装構造 |
JP2014212265A (ja) * | 2013-04-19 | 2014-11-13 | 新電元工業株式会社 | 半導体装置およびその製造方法 |
JP2015176871A (ja) * | 2014-03-12 | 2015-10-05 | 株式会社東芝 | 半導体装置及びその製造方法 |
-
2019
- 2019-11-28 JP JP2019215692A patent/JP7310571B2/ja active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006203096A (ja) * | 2005-01-24 | 2006-08-03 | Matsushita Electric Ind Co Ltd | 実装体およびその製造方法 |
JP2009200250A (ja) * | 2008-02-21 | 2009-09-03 | Nec Corp | 半導体素子の実装構造 |
JP2014212265A (ja) * | 2013-04-19 | 2014-11-13 | 新電元工業株式会社 | 半導体装置およびその製造方法 |
JP2015176871A (ja) * | 2014-03-12 | 2015-10-05 | 株式会社東芝 | 半導体装置及びその製造方法 |
Also Published As
Publication number | Publication date |
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JP7310571B2 (ja) | 2023-07-19 |
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