JP2021063306A - Plating device and plating method - Google Patents

Abstract

To prevent deterioration in the uniformity of a plating film thickness caused by an oxide film formed at the edge part of a substrate and/or organic matter stuck to the edge part of the substrate.SOLUTION: Provided is a plating device performing plating to a substrate. The plating device includes: a plating tank for applying voltage to the substrate set in a substrate holder and performing plating; and an edge cleaning apparatus for locally removing at least either one of the organic matter and oxide film present in the edge part of the substrate.SELECTED DRAWING: Figure 7

Description

The present invention relates to a plating apparatus and a plating method.

Conventionally, bumps (projections) that form wiring in fine wiring grooves, holes, or resist openings provided on the surface of a semiconductor wafer or the like, or electrically connect to a package electrode or the like on the surface of a semiconductor wafer or the like. Electrodes) are formed. As a method for forming the wiring and bumps, for example, an electroplating method, a vapor deposition method, a printing method, a ball bump method, etc. are known. Electroplating methods, which can be used and have relatively stable performance, are often used.

In order to plate a substrate by the electrolytic plating method, a resist pattern is formed in advance on a substrate such as a semiconductor wafer on which a seed layer is formed. Subsequently, the substrate on which the resist pattern is formed is irradiated with ultraviolet light (hereinafter referred to as UV or Ultra Violet) to remove the resist residue on the surface of the substrate (ashing treatment) and hydrophilize the resist surface (discum). Processing).

The substrate subjected to the ashing treatment and the discum treatment is transported to the plating apparatus and held in the substrate holder. The board holder has electrical contacts for supplying power to the board. The electrical contacts of the substrate holder are configured to come into contact with the seed layer on the edge of the resist-coated substrate when the substrate is held in the substrate holder. Such a substrate holder is disclosed in, for example, Patent Document 1. The substrate held in the substrate holder is immersed in a plating solution, and a voltage is applied between the anode and the substrate to form a plating film on the substrate surface.

JP-A-2002-363794

In the conventional plating method, the plating treatment is not performed immediately after the ashing treatment and the discum treatment are performed. That is, the substrate is held in the substrate holder after a predetermined time has elapsed after the ashing treatment and the discum treatment are performed. At this time, an oxide film may be formed on the seed layer on the edge portion of the substrate or organic substances volatilized from the resist may adhere to the seed layer due to the passage of time from the ashing treatment and the discard treatment. If an oxide film is formed on the seed layer on the edge of the substrate or organic substances adhere to the seed layer that the electrical contacts of the substrate come into contact with, the contact resistance of the electrical contacts of the substrate holder varies, and the plating film thickness increases. There is a problem that the uniformity deteriorates.

The present invention has been made in view of the above problems, and one of the objects thereof is caused by at least one of an oxide film formed on the edge portion of the substrate and an organic substance adhering to the edge portion of the substrate. This is to prevent deterioration of the uniformity of the plating film thickness.

According to one embodiment of the present invention, there is provided a plating apparatus for plating a substrate. This plating apparatus accommodates an edge cleaning device for locally removing at least one of an organic substance and an oxide film existing at the edge of the substrate and a plating solution, and the substrate and the anode are combined with the plating solution. It has a plating tank for applying a voltage between the substrate and the anode in an immersed state to perform plating.

According to this embodiment, at least one of the organic substance and the oxide film existing at the edge portion of the substrate can be locally removed before being set in the substrate holder. Therefore, the contact resistance of the electrical contacts of the substrate holder varies depending on at least one of the organic matter and the oxide film existing on the edge of the substrate without adversely affecting the resist pattern formed on the surface other than the edge of the substrate. It is possible to prevent deterioration of the uniformity of the plating film thickness.

In one embodiment of the present invention, the edge cleaning device includes an organic substance removing device that locally removes an organic substance existing at an edge portion of the substrate, and the organic substance removing device is a rotating edge of the substrate. A UV irradiating device that irradiates a portion with UV or a plasma radiating device that radiates plasma to an edge portion of the rotating substrate is included.

Generally, a resist is coated on the substrate to be plated, and when UV or plasma is radiated to the resist, the resist may be denatured and damaged. According to this embodiment, UV or plasma can be locally emitted to the edge portion of the substrate. As a result, UV or plasma is not radiated to the surface other than the edge portion of the substrate, that is, the portion of the substrate to which the resist is applied, so that the edge portion of the substrate is not damaged. Organic matter can be desorbed.

In one embodiment of the present invention, the plating apparatus has an aligner that rotates the substrate to align the orientation of the substrate, and the organic matter desorption device is provided on the aligner.

According to this aspect, since the organic matter desorption device is provided in the aligner, the edge portion of the substrate can be treated by the UV irradiation device or the plasma irradiation device while rotating the substrate by the aligner. Therefore, it is not necessary to provide the organic matter desorption device with a mechanism for rotating the substrate, so that the cost can be reduced. Further, by providing the organic matter desorption device in the aligner, the footprint of the entire plating device can be reduced.

In one embodiment of the present invention, the UV irradiation device or the plasma radiation device is arranged at a position where UV or plasma can be locally applied to an edge portion of the substrate from above the substrate.

In one embodiment of the present invention, the edge cleaning device includes an oxide film removing device that locally removes an oxide film existing at an edge portion of the substrate, and the oxide film removing device is a rotating edge of the substrate. Includes a chemical solution cleaning device equipped with a chemical solution nozzle that supplies the chemical solution to the part.

Generally, a seed layer is formed on the substrate to be plated, and if the seed layer is left with the chemical solution attached, the seed layer may melt. Therefore, when the chemical solution adheres to a portion other than the edge of the substrate to be plated, that is, the seed layer exposed from the opening of the resist pattern, sufficient cleaning is required so that the chemical solution does not remain. According to this embodiment, the chemical solution can be locally supplied to the edge portion of the substrate. As a result, the oxide film formed on the edge portion of the substrate can be removed without adhering the chemical solution to the seed layer exposed from the opening of the resist pattern. Therefore, the cleaning time of the substrate can be significantly shortened as compared with the case where the chemical solution is adhered to the entire surface of the substrate.

In one embodiment of the present invention, the chemical solution contains dilute sulfuric acid of 3 wt% or more and 15 wt% or less or citric acid of 2 wt% or more and 20 wt% or less.

When removing the oxide film on the edge of the substrate with a chemical solution, it is necessary to prevent the seed layer on the edge of the substrate from melting. According to this embodiment, the oxide film can be removed without melting the seed layer on the edge portion of the substrate. If the dilute sulfuric acid is less than 3 wt% or the citric acid is less than 2 wt%, the acid concentration may be too low to properly remove the oxide film. Further, if the dilute sulfuric acid is more than 15 wt% or the citric acid is more than 20 wt%, the acid concentration may be too high and the seed layer on the edge portion of the substrate may be dissolved.

In one embodiment of the present invention, the plating apparatus has a spin rinse dryer configured to rotate and dry the substrate, and the oxide film removing apparatus is provided on the spin rinse dryer.

According to this aspect, since the oxide film removing device is provided in the spin rinse dryer, the edge portion of the substrate can be treated by the chemical solution cleaning device while rotating the substrate by the spin rinse dryer. Further, since the spin rinse dryer generally has a cover for preventing the liquid on the substrate from scattering, it also prevents the chemical solution supplied by the chemical solution cleaning device from scattering to the outside of the spin rinse dryer. be able to. Therefore, it is not necessary to provide the oxide film removing device with a mechanism for rotating the substrate and a cover for preventing the chemical solution from scattering, so that the cost can be reduced. Further, by providing the oxide film removing device in the spin rinse dryer, the footprint of the entire plating device can be reduced.

In one embodiment of the present invention, the chemical solution cleaning device is arranged at a position where the chemical solution can be locally supplied to the edge portion of the substrate from above the substrate.

In one embodiment of the present invention, the plating apparatus includes a sponge cleaning apparatus that removes particles existing at the edges of the substrate.

According to this embodiment, it is possible to prevent particles from being sandwiched between the electrical contacts of the substrate holder and the seed layer on the edge portion of the substrate, and it is possible to suppress deterioration of contact resistance due to the particles. it can.

In one embodiment of the present invention, the plating apparatus irradiates the edge portion of the substrate from which at least one of the organic matter and the oxide film present at the edge portion is locally removed with light, and the intensity of the reflected light. Alternatively, the sensor is provided so as to measure the absorbance.

According to this embodiment, by measuring the intensity or absorbance of the reflected light, the edge portion is contaminated with respect to the substrate in which at least one of the organic matter and the oxide film existing at the edge portion is locally removed. It can be determined whether or not the substance has been sufficiently removed. As a result, it is possible to determine whether or not there is a contaminant on the edge portion of the substrate before the plating treatment, and then perform the plating treatment on the substrate on which no contaminant remains on the edge portion. It is possible to more reliably prevent deterioration of the in-plane uniformity of the plating film thickness of the substrate W due to variations in the contact resistance of the electrical contacts of the substrate holder.

According to one embodiment of the present invention, there is provided a plating method for plating a substrate. This plating method includes a removal step of locally removing at least one of an organic substance and an oxide film existing at an edge portion of the substrate, a step of holding the substrate in the substrate holder, and a step of holding the substrate in the substrate holder. It has a step of plating the substrate.

According to this embodiment, at least one of the organic substance and the oxide film existing at the edge portion of the substrate can be locally removed before being set in the substrate holder. Therefore, the contact resistance of the electrical contacts of the substrate holder varies depending on at least one of the organic matter and the oxide film existing on the edge of the substrate without adversely affecting the resist pattern formed on the surface other than the edge of the substrate. It is possible to prevent deterioration of the uniformity of the plating film thickness.

In one embodiment of the present invention, the plating method includes a step of forming a resist pattern on the substrate and an ashing step of ashing the resist pattern, and the removing step is executed after the ashing step.

According to this aspect, since the removal step is performed after the ashing step, a predetermined time elapses after the ashing step, and at least one of organic matter adhesion to the edge portion of the substrate and formation of an oxide film occurs. Even if it is, at least one of the organic substance and the oxide film existing at the edge portion of the substrate can be locally removed by the removing step.

In one embodiment of the invention, the removal step comprises the step of locally radiating UV or plasma to the edges of the substrate.

Generally, a resist is coated on the substrate to be plated, and when UV or plasma is radiated to the resist, the resist may be denatured and damaged. According to this embodiment, UV or plasma can be locally emitted to the edge portion of the substrate. As a result, UV or plasma is not radiated to the surface other than the edge portion of the substrate, that is, the portion of the substrate to which the resist is applied, so that the edge portion of the substrate is not damaged. Organic matter can be desorbed.

In one embodiment of the present invention, the removing step includes a step of locally supplying a chemical solution to the edge portion of the substrate.

Generally, a seed layer is formed on the substrate to be plated, and if the seed layer is left with the chemical solution attached, the seed layer may melt. Therefore, when the chemical solution adheres to a portion other than the edge of the substrate to be plated, that is, the seed layer exposed from the opening of the resist pattern, sufficient cleaning is required so that the chemical solution does not remain. According to this embodiment, the chemical solution can be locally supplied to the edge portion of the substrate. As a result, the oxide film formed on the edge portion of the substrate can be removed without adhering the chemical solution to the seed layer exposed from the opening of the resist pattern. Therefore, the cleaning time of the substrate can be significantly shortened as compared with the case where the chemical solution is adhered to the entire surface of the substrate.

In one embodiment of the present invention, the chemical solution contains dilute sulfuric acid of 3 wt% or more and 15 wt% or less or citric acid of 2 wt% or more and 20 wt% or less.

When removing the oxide film on the edge of the substrate with a chemical solution, it is necessary to prevent the seed layer on the edge of the substrate from melting. According to this embodiment, the oxide film can be removed without melting the seed layer on the edge portion of the substrate. If the dilute sulfuric acid is less than 3 wt% or the citric acid is less than 2 wt%, the acid concentration may be too low to properly remove the oxide film. Further, if the dilute sulfuric acid is more than 15 wt% or the citric acid is more than 20 wt%, the acid concentration may be too high and the seed layer on the edge portion of the substrate may be dissolved.

In one embodiment of the present invention, the plating method includes a step of bringing the sponge head into contact with the rotating edge of the substrate to remove particles.

According to this embodiment, it is possible to prevent particles from being sandwiched between the electrical contacts of the substrate holder and the seed layer on the edge portion of the substrate, and it is possible to suppress deterioration of contact resistance due to the particles. it can.

In one embodiment of the present invention, the removing step includes a step of locally removing the oxide film after locally removing the organic substance existing at the edge portion of the substrate.

At the edge of the substrate, organic matter may adhere to the oxide film. Therefore, if the oxide film is removed before the organic substance is desorbed, it is difficult to remove the oxide film on the portion to which the organic substance is attached. According to this aspect, since the oxide film is removed after the organic substance is desorbed, the organic substance and the oxide film can be effectively removed.

In one embodiment of the present invention, the removing step includes a step of locally removing at least one of an organic substance and an oxide film existing within a range of 2 mm from the peripheral edge of the substrate toward the center of the substrate.

Generally, the electrical contacts of the substrate holder come into contact with the edges within a range of 2 mm from the periphery of the substrate. Therefore, according to this embodiment, at least one of the organic substance and the oxide film existing on the portion on the substrate with which the electrical contacts of the substrate holder come into contact can be locally removed.

In one embodiment of the present invention, the removing step is at least one of an organic substance and an oxide film existing in the region up to the peripheral edge of the substrate, which is adjacent to the region sealed by the sealing member when the substrate is held by the substrate holder. Includes the step of locally removing one or the other.

In one embodiment of the present invention, the plating method irradiates the edge portion of the substrate with locally removed at least one of the organic substances or the oxide film existing at the edge portion with light, and the intensity of the reflected light. Alternatively, it has a step of measuring the absorbance.

According to this embodiment, by measuring the intensity or absorbance of the reflected light, the edge portion is contaminated with respect to the substrate in which at least one of the organic matter and the oxide film existing at the edge portion is locally removed. It can be determined whether or not the substance has been sufficiently removed. As a result, it is possible to determine whether or not there is a contaminant on the edge portion of the substrate before the plating treatment, and then perform the plating treatment on the substrate on which no contaminant remains on the edge portion. It is possible to more reliably prevent deterioration of the in-plane uniformity of the plating film thickness of the substrate W due to variations in the contact resistance of the electrical contacts of the substrate holder.

According to one embodiment of the present invention, there is provided a plating apparatus for plating a substrate. In this plating apparatus, at least one of a plating tank for applying a voltage to the substrate held in the substrate holder to perform plating and at least one of an organic substance, an oxide film and particles existing at an edge portion of the substrate is locally localized. It has an edge cleaning device for removing the target.

According to this embodiment, at least one of the organic matter, the oxide film, and the particles existing at the edge portion of the substrate can be locally removed before being set in the substrate holder. Therefore, contact of the electrical contacts of the substrate holder by at least one of the organic matter, the oxide film, and the particles existing on the edge portion of the substrate without adversely affecting the resist pattern formed on the surface other than the edge portion of the substrate. It is possible to suppress the variation in resistance and prevent the deterioration of the uniformity of the plating film thickness.

According to one embodiment of the present invention, there is provided a plating method for plating a substrate. This plating method includes a removal step of locally removing at least one of an organic substance, an oxide film, and particles existing at an edge portion of the substrate before being held by the substrate holder, and holding the substrate in the substrate holder. A step of plating the substrate held by the substrate holder and a step of plating the substrate.

According to this embodiment, at least one of the organic matter, the oxide film, and the particles existing at the edge portion of the substrate can be locally removed before being set in the substrate holder. Therefore, contact of the electrical contacts of the substrate holder by at least one of the organic matter, the oxide film, and the particles existing on the edge portion of the substrate without adversely affecting the resist pattern formed on the surface other than the edge portion of the substrate. It is possible to suppress the variation in resistance and prevent the deterioration of the uniformity of the plating film thickness.

According to the plating apparatus of one embodiment of the present invention, the edge cleaning device includes an organic substance removing device that locally removes an organic substance existing at the edge portion of the substrate, and the organic substance removing device is said to be said. A UV irradiation device that irradiates the edge portion of the substrate with UV or a plasma radiating device that radiates plasma to the edge portion of the substrate is included.

Generally, a resist is coated on the substrate to be plated, and when UV or plasma is radiated to the resist, the resist may be denatured and damaged. According to this embodiment, UV or plasma can be locally emitted to the edge portion of the substrate. As a result, UV or plasma is not radiated to the surface other than the edge portion of the substrate, that is, the portion of the substrate to which the resist is applied, so that the edge portion of the substrate is not damaged. Organic matter can be desorbed.

According to the plating apparatus of one embodiment of the present invention, the edge portion cleaning apparatus has a head portion configured to locally apply UV or plasma to the edge portion of the substrate and the head portion in the horizontal direction. It has an actuator to move.

According to this aspect, since the head portion can be moved in the horizontal direction, for example, even if the substrate is rectangular, the edge portion can be cleaned by moving the head portion along the edge portion. it can.

According to the plating apparatus of one embodiment of the present invention, the actuator has a first actuator that moves the head portion in the first direction and a second actuator that moves the head portion in a second direction orthogonal to the first direction. It has an actuator.

According to this aspect, the head portion can be moved in the first direction and the second direction. Therefore, not only the head portion can be moved along the edge portion, but also the head portion can be aligned in the direction orthogonal to the extending direction of the edge portion. Therefore, for example, even when the substrate is a rectangular substrate having a long side and a short side, the head portion can be aligned with both the edge portion of the long side and the edge portion of the short side.

According to the plating apparatus of one embodiment of the present invention, the edge cleaning device has a control unit for controlling the head portion and the actuator, and the actuator has the head portion along the edge portion of the substrate. The control unit is configured to move, and the head unit and the control unit are configured to simultaneously radiate UV or plasma by the head unit and move the head unit along the edge portion of the substrate by the actuator. Control the actuator.

According to this aspect, UV or plasma can be radiated while moving the head portion along the edge portion of the rectangular substrate.

According to the plating apparatus of one embodiment of the present invention, the edge cleaning device has a swivel mechanism for swiveling the head portion, and the control unit is based on the head portion when the head portion is swiveled by the swivel mechanism. The head portion and the swivel mechanism are controlled so as to stop the radiation of UV or plasma.

According to this aspect, since the head portion can be swiveled, the head portion can be easily moved on the edge portions of the four sides of the rectangular substrate. Further, since the head portion does not radiate UV or plasma while the head portion is rotating, it is possible to prevent the UV or plasma from being radiated to an unintended region on the rectangular substrate.

According to the plating apparatus of one embodiment of the present invention, the edge cleaning apparatus includes a rotating mechanism for rotating the substrate, a head portion, the rotating mechanism, and a control unit for controlling the actuator. The control unit controls the head unit and the rotation mechanism so as to stop the radiation of UV or plasma by the head unit when the substrate is rotated by the rotation mechanism.

According to this aspect, since the substrate can be rotated, the edge portions of the four sides of the rectangular substrate can be easily moved below the head portion. Further, since the head portion does not radiate UV or plasma while the substrate is rotating, it is possible to prevent UV or plasma from being radiated to an unintended region on the rectangular substrate.

According to the plating method of one embodiment of the present invention, the removing step includes a step of radiating UV or plasma while moving the head portion that radiates UV or plasma along the edge portion of the rectangular substrate.

According to this aspect, UV or plasma can be radiated while moving the head portion along the edge portion of the rectangular substrate.

According to the plating method of one embodiment of the present invention, the removing step includes a step of moving the head portion in the horizontal direction to align the head portion with the edge portion of the rectangular substrate.

According to this aspect, for example, even when the substrate is a rectangular substrate having a long side and a short side, the head portion can be aligned with both the edge portion of the long side and the edge portion of the short side.

According to the plating method of one embodiment of the present invention, in the removing step, after radiating UV or plasma to one of the edge portions of the rectangular substrate, the head portion is swiveled while stopping the radiation of UV or plasma. Has a step of causing.

According to this aspect, since the head portion can be swiveled, the head portion can be easily moved on the edge portions of the four sides of the rectangular substrate. Further, since the head portion does not radiate UV or plasma while the head portion is rotating, it is possible to prevent the UV or plasma from being radiated to an unintended region on the rectangular substrate.

According to the plating method of one embodiment of the present invention, in the removing step, after radiating UV or plasma to one of the edges of the rectangular substrate, the rectangular substrate is radiated while stopping the emission of UV or plasma. It has a step of rotating.

According to this aspect, since the substrate can be rotated, the edge portions of the four sides of the rectangular substrate can be easily moved below the head portion. Further, since the head portion does not radiate UV or plasma while the substrate is rotating, it is possible to prevent UV or plasma from being radiated to an unintended region on the rectangular substrate.

According to the present invention, it is possible to prevent deterioration of the uniformity of the plating film thickness due to at least one of an oxide film formed on the edge portion of the substrate and an organic substance adhering to the edge portion of the substrate.

It is an overall layout drawing of the plating apparatus which concerns on 1st Embodiment. It is a perspective view of the substrate holder used in the plating apparatus shown in FIG. It is sectional drawing which shows the electric contact of the substrate holder shown in FIG. It is a schematic top view of the aligner shown in FIG. It is schematic cross-sectional view of the aligner in arrow view 5-5 shown in FIG. It is schematic cross-sectional view of the aligner in arrow view 6-6 shown in FIG. It is a flow chart which shows the plating method which concerns on 1st Embodiment. It is an overall layout drawing of the plating apparatus of another example which concerns on 1st Embodiment. It is an overall layout drawing of the plating apparatus which concerns on 2nd Embodiment. It is a schematic diagram which shows the spin rinse dryer provided with the oxide film removing apparatus. It is a flow chart which shows the plating method which concerns on 2nd Embodiment. It is an overall layout drawing of the plating apparatus which concerns on 3rd Embodiment. It is a flow chart which shows the plating method which concerns on 3rd Embodiment. It is an overall layout drawing of the plating apparatus which concerns on 4th Embodiment. It is a schematic side view of the sponge cleaning apparatus. It is a flow chart which shows the plating method which concerns on 4th Embodiment. It is an overall layout drawing of the plating apparatus which concerns on 5th Embodiment. It is a schematic side view of the sponge chemical liquid cleaning apparatus. It is a flow chart which shows the plating method which concerns on 5th Embodiment. It is an overall layout drawing of the plating apparatus which concerns on 6th Embodiment. It is a flow chart which shows the plating method which concerns on 6th Embodiment. It is a schematic side view of an example of an organic matter desorption device provided in a fixing unit. It is a top view of the organic matter desorption apparatus which shows the process of desorbing the organic matter of the edge part of a rectangular substrate by the organic matter desorption apparatus shown in FIG. 22. It is a top view of the organic matter desorption apparatus which shows the process of desorbing the organic matter of the edge part of a rectangular substrate by the organic matter desorption apparatus shown in FIG. 22. It is a top view of the organic matter desorption apparatus which shows the process of desorbing the organic matter of the edge part of a rectangular substrate by the organic matter desorption apparatus shown in FIG. 22. It is a top view of the organic matter desorption apparatus which shows the process of desorbing the organic matter of the edge part of a rectangular substrate by the organic matter desorption apparatus shown in FIG. 22. It is a top view of the organic matter desorption apparatus which shows the process of desorbing the organic matter of the edge part of a rectangular substrate by the organic matter desorption apparatus shown in FIG. 22. It is a schematic side view of another example of the organic matter desorption device provided in a fixing unit. It is a top view of the organic matter desorption apparatus which shows the process of desorbing the organic matter of the edge part of a rectangular substrate by the organic matter desorption apparatus shown in FIG. 24. It is a top view of the organic matter desorption apparatus which shows the process of desorbing the organic matter of the edge part of a rectangular substrate by the organic matter desorption apparatus shown in FIG. 24. It is a top view of the organic matter desorption apparatus which shows the process of desorbing the organic matter of the edge part of a rectangular substrate by the organic matter desorption apparatus shown in FIG. 24. It is a top view of the organic matter desorption apparatus which shows the process of desorbing the organic matter of the edge part of a rectangular substrate by the organic matter desorption apparatus shown in FIG. 24. It is a top view of the organic matter desorption apparatus which shows the process of desorbing the organic matter of the edge part of a rectangular substrate by the organic matter desorption apparatus shown in FIG. 24. It is a schematic side view of another example of the organic matter desorption device provided in a fixing unit. It is a top view of the organic matter desorption apparatus which shows the process of desorbing the organic matter of the edge part of a rectangular substrate by the organic matter desorption apparatus shown in FIG. It is a top view of the organic matter desorption apparatus which shows the process of desorbing the organic matter of the edge part of a rectangular substrate by the organic matter desorption apparatus shown in FIG. It is a top view of the organic matter desorption apparatus which shows the process of desorbing the organic matter of the edge part of a rectangular substrate by the organic matter desorption apparatus shown in FIG. It is a schematic side view of another example of the organic matter desorption device provided in a fixing unit. It is a top view of the organic matter desorption apparatus which shows the process of desorbing the organic matter of the edge part of a rectangular substrate by the organic matter desorption apparatus shown in FIG. 28. It is a top view of the organic matter desorption apparatus which shows the process of desorbing the organic matter of the edge part of a rectangular substrate by the organic matter desorption apparatus shown in FIG. 28. It is a top view of the organic matter desorption apparatus which shows the process of desorbing the organic matter of the edge part of a rectangular substrate by the organic matter desorption apparatus shown in FIG. 28.

<First Embodiment>
Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the drawings described below, the same or corresponding components are designated by the same reference numerals and duplicate description will be omitted.

FIG. 1 is an overall layout view of the plating apparatus according to the first embodiment. As shown in FIG. 1, this plating apparatus is roughly divided into a load / unload unit 170A for loading the substrate into the substrate holder 60 or unloading the substrate from the substrate holder 60 and a processing unit 170B for processing the substrate. Be done.

The load / unload portion 170A includes three hoops (Front-Opening Unified Pod: FOUP) 102, an aligner 40 for aligning the positions of the orientation flats and notches of the substrate in predetermined directions, and after plating. A spin rinse dryer 20 is provided to rotate and dry the substrate of the above. The hoop 102 stores a plurality of substrates such as semiconductor wafers in multiple stages. Near the spin rinse dryer 20, a fixing unit 120 on which the substrate holder 60 is placed and the substrate is attached / detached is provided. At the center of these units 102, 40, 20, and 120, a substrate transfer device 122 including a transfer robot that transfers a substrate between these units is arranged. As will be described later, the aligner 40 according to the first embodiment is an organic substance desorption device (FIGS. 4 and 6 and the like) for locally desorbing organic substances existing at the edge portion of the substrate before being set in the substrate holder 60. See).

The fixing unit 120 is configured so that two board holders 60 can be mounted. In the fixing unit 120, after the substrate is delivered between one substrate holder 60 and the substrate transfer device 122, the substrate is delivered between the other substrate holder 60 and the substrate transfer device 122.

The processing unit 170B of the plating apparatus includes a stocker 124, a pre-wet tank 126, a pre-soak tank 128, a first cleaning tank 130a, a blow tank 132, a second cleaning tank 130b, and a plating tank 10. In the stocker 124, the substrate holder 60 is stored and temporarily placed. In the pre-wet tank 126, the substrate is immersed in pure water. In the pre-soak tank 128, the oxide film on the surface of the conductive layer such as the seed layer formed on the surface of the substrate is removed by etching. In the first cleaning tank 130a, the substrate after pre-soaking is cleaned together with the substrate holder 60 with a cleaning liquid (pure water or the like). In the blow tank 132, the substrate is drained after cleaning. In the second cleaning tank 130b, the plated substrate is cleaned together with the substrate holder 60 with a cleaning liquid. The stocker 124, the pre-wet tank 126, the pre-soak tank 128, the first cleaning tank 130a, the blow tank 132, the second cleaning tank 130b, and the plating tank 10 are arranged in this order.

The plating tank 10 has, for example, a plurality of plating cells 134 including an overflow tank. Each plating cell 134 houses one substrate inside, and the substrate is immersed in the plating solution held inside. By applying a voltage between the substrate and the anode in the plating cell 134, the surface of the substrate is plated with copper plating or the like.

The plating apparatus has a substrate holder transport device 140 that is located on the side of each of these devices and transports the substrate holder 60 together with the substrate between these devices, for example, adopting a linear motor system. The substrate holder transfer device 140 has a first transporter 142 and a second transporter 144. The first transporter 142 is configured to transport the substrate between the fixing unit 120, the stocker 124, the pre-wet tank 126, the pre-soak tank 128, the first cleaning tank 130a, and the blow tank 132. The second transporter 144 is configured to transport the substrate between the first cleaning tank 130a, the second cleaning tank 130b, the blow tank 132, and the plating tank 10. In another embodiment, the plating apparatus is provided with only one of the first transporter 142 and the second transporter 144, and one of the transporters is a fixing unit 120, a stocker 124, a pre-wet tank 126, and the like. The substrate may be transported between the pre-soak tank 128, the first cleaning tank 130a, the second cleaning tank 130b, the blow tank 132, and the plating tank 10.

FIG. 2 is a perspective view of the substrate holder 60 used in the plating apparatus shown in FIG. As shown in FIG. 2, the substrate holder 60 includes, for example, a first holding member 65 made of vinyl chloride and having a rectangular flat plate shape, and a second holding member 65 which is openably and closably attached to the first holding member 65 via a hinge 63. It has 66 and. A holding surface 68 for holding the board is provided at a substantially central portion of the first holding member 65 of the board holder 60. Further, on the outside of the holding surface 68 of the first holding member 65, inverted L-shaped clampers 67 having protrusions protruding inward along the circumference of the holding surface 68 are provided at equal intervals. ..

A pair of substantially T-shaped hands 69, which serve as support portions for transporting or suspending and supporting the substrate holder 60, are connected to the end portion of the first holding member 65 of the substrate holder 60. In the stocker 124 shown in FIG. 1, the substrate holder 60 is vertically suspended and supported by hooking the hand 69 on the upper surface of the peripheral wall of the stocker 124. Further, the hand 69 of the board holder 60 suspended and supported is gripped by the first transporter 142 or the second transporter 144, and the board holder 60 is conveyed. Also in the pre-wet tank 126, the pre-soak tank 128, the cleaning tanks 130a and 130b, the blow tank 132, and the plating tank 10, the substrate holder 60 is suspended and supported by the peripheral walls thereof via the hand 69.

Further, the hand 69 is provided with an external contact (not shown) for connecting to an external power supply unit. The external contact is electrically connected to a plurality of conductors 73 (see FIG. 3) provided on the outer periphery of the holding surface 68 via a plurality of wires.

The second holding member 66 includes a base portion 61 fixed to the hinge 63 and a ring-shaped seal holder 62 fixed to the base portion 61. A presser ring 64 for pressing and fixing the seal holder 62 against the first holding member 65 is rotatably attached to the seal holder 62 of the second holding member 66. The presser ring 64 has a plurality of ridges 64a protruding outward on the outer peripheral portion thereof. The upper surface of the ridge portion 64a and the lower surface of the inwardly projecting portion of the clamper 67 have tapered surfaces that are inclined in opposite directions along the rotation direction.

When holding the substrate, first, with the second holding member 66 open, the substrate is placed on the holding surface 68 of the first holding member 65, and the second holding member 66 is closed. Subsequently, the presser ring 64 is rotated clockwise so that the ridge portion 64a of the presser ring 64 is slid into the inside (lower side) of the inwardly projecting portion of the clamper 67. As a result, the first holding member 65 and the second holding member 66 are fastened to each other and locked via the tapered surfaces provided on the pressing ring 64 and the clamper 67, respectively, and the substrate is held. When releasing the holding of the substrate, the pressing ring 64 is rotated counterclockwise with the first holding member 65 and the second holding member 66 locked. As a result, the ridge portion 64a of the pressing ring 64 is removed from the inverted L-shaped clamper 67, and the holding of the substrate is released.

FIG. 3 is a cross-sectional view showing the electrical contacts of the substrate holder 60 shown in FIG. As shown in FIG. 3, the substrate W is placed on the holding surface 68 of the first holding member 65. Between the holding surface 68 and the first holding member 65, a plurality of conductors 73 (one in the drawing) connected to a plurality of wires extending from an external contact provided on the hand 69 shown in FIG. 2 are arranged. Has been done. When the substrate W is placed on the holding surface 68 of the first holding member 65, the conductor 73 has a spring characteristic on the surface of the first holding member 65 with the end portion of the conductor 73 on the side of the substrate W. A plurality of the substrates W are arranged on the outer circumference of the substrate W so as to be exposed in this state.

The surface of the seal holder 62 facing the first holding member 65 (lower surface in the drawing) is a seal that is pressed against the outer peripheral portion of the surface of the substrate W and the first holding member 65 when the substrate W is held by the substrate holder 60. The member 70 is attached. The sealing member 70 has a lip portion 70a that seals the surface of the substrate W and a lip portion 70b that seals the surface of the first holding member 65.

The support 71 is attached to the inside of the seal member 70 sandwiched between the pair of lip portions 70a and 70b. A plurality of electric contacts 72 configured to be able to supply power from the conductor 73 are fixed to the support 71 with screws or the like, and are arranged along the circumference of the substrate W. The electric contact 72 has an electric contact end portion 72a extending inward of the holding surface 68, and a leg portion 72b configured to be able to supply power from the conductor 73.

When the first holding member 65 and the second holding member 66 shown in FIG. 2 are locked, as shown in FIG. 3, a short lip portion 70a on the inner peripheral surface side of the sealing member 70 is formed on the surface of the substrate W. The long lip portion 70b on the outer peripheral surface side is pressed against the surface of the first holding member 65, respectively. As a result, the gap between the lip portion 70a and the lip portion 70b is surely sealed, and the substrate W is held.

In the region sealed by the sealing member 70, that is, the region sandwiched between the pair of lip portions 70a and 70b of the sealing member 70, the conductor 73 is electrically connected to the leg portion 72b of the electrical contact 72 and the electrical contact end. The portion 72a comes into contact with the seed layer on the edge portion of the substrate W. As a result, power can be supplied to the substrate W via the electrical contact 72 while the substrate W is sealed by the sealing member 70 and held by the substrate holder 60.

As described above, a resist pattern is formed in advance on the substrate W on which the seed layer is formed. Before being conveyed to the plating apparatus shown in FIG. 1, the substrate W is irradiated with UV to remove the resist residue on the substrate surface (ashing treatment) and the resist surface is hydrophilized (discum treatment). ) Is performed. The substrate W that has undergone the ashing treatment and the discard treatment is then conveyed to the plating apparatus and held in the substrate holder 60. Here, an oxide film is formed or organic substances volatilized from the resist adhere to the seed layer on the edge portion of the substrate W on which the resist is not applied due to the passage of time from the ashing treatment and the discard treatment. There is. As shown in FIG. 3, since the electric contact 72 comes into contact with the edge portion of the substrate W, if an oxide film is formed on the seed layer on the edge portion of the substrate W or an organic substance adheres to the seed layer, the electricity of the substrate holder 60 is generated. There is a problem that the contact resistance of the contact 72 varies and the uniformity of the plating film thickness deteriorates.

Therefore, in the present embodiment, the aligner 40 shown in FIG. 1 is provided with an organic matter desorbing device to desorb (remove) the organic matter formed in the seed layer on the edge portion of the substrate W. In the present specification, the edge portion of the substrate W is a region where the electrical contact 72 can come into contact, or a peripheral edge of the substrate W rather than a portion where the seal member 70 comes into contact when the substrate W is held by the substrate holder 60. The area on the part side. For example, in the present embodiment, it refers to a region on the outer peripheral side of the portion of the seal member 70 shown in FIG. 3 where the lip portion 70a abuts, and is within a range of about 5 mm from the outer peripheral edge portion of the substrate W toward the center of the substrate. , More preferably, it means within a range of about 2 mm.

FIG. 4 is a schematic top view of the aligner 40 shown in FIG. FIG. 5 is a schematic cross-sectional view of the aligner 40 in arrow view 5-5 shown in FIG. 4, and FIG. 6 is a schematic cross-sectional view of the aligner 40 in arrow view 6-6 shown in FIG. As shown in FIGS. 4 to 6, the aligner 40 includes a base 41, a rotating stage 42, an aligner light source 43, a photodetector 44, and an organic matter desorption device 45 (corresponding to an example of an edge cleaning device). , Have.

The rotation stage 42 is configured to attract the back surface of the substrate W, and rotates the substrate W in the circumferential direction. The rotary stage 42 sucks the substrate W by an electrostatic suction type or a vacuum suction type. The aligner light source 43 is configured to irradiate the light 46 near the edge portion of the substrate W rotated by the rotating stage 42. When the notch of the substrate W moves to a position where the light 46 from the aligner light source 43 is irradiated by the rotation of the substrate W, the light 46 passes through the notch and reaches the photodetector 44. When the photodetector 44 detects the light 46, the aligner 40 can recognize that the notch of the substrate W is located directly below the aligner light source 43, and can align the orientation of the substrate W.

The organic matter desorption device 45 is a UV irradiation device or a plasma radiation device. In the present embodiment, UV or plasma can be locally applied to the edge portion of the substrate W from above the substrate W. The organic matter desorption device 45 can locally apply UV or plasma to the edge portion of the substrate W before being held by the substrate holder 60. In other words, the region other than the edge portion of the substrate W is not exposed to UV or plasma. By rotating the substrate W by the rotation stage 42, UV or plasma can be efficiently applied over the entire circumference of the edge portion of the substrate W. When the organic substance adhering to the edge portion of the substrate W is irradiated with UV or plasma, the organic substance is decomposed to generate a volatile substance, and the organic substance that has become a volatile substance is volatilized and removed. The distance between the UV irradiation source of the UV irradiation device or the plasma emission port of the plasma radiation device and the substrate W is preferably about 1 mm or more and about 10 mm or less. If this distance is less than 1 mm, the substrate may come into physical contact with the UV irradiation source or the plasma emission port of the plasma emission apparatus. Further, if this distance is more than 10 mm, it may not be possible to locally irradiate UV or plasma. In order to enable local irradiation without more reliable physical contact between the substrate and the UV irradiation source or the plasma emission port of the plasma emission device, this distance should be about 2 mm or more and about 5 mm or less. It is more preferable to do so.

When the organic substance desorption device 45 is a UV irradiation device, as the UV light source, for example, a high-pressure mercury lamp, a low-pressure mercury lamp, a black light, a laser light source capable of emitting light in the UV region, or the like can be adopted. .. High-pressure mercury lamps, low-pressure mercury lamps, and black lights tend to emit light. Therefore, when adopting these light sources, install the light source near the substrate W or use an optical system only at the edge. It is preferable to irradiate with UV. When the organic matter desorption device 45 is a plasma radiating device, for example, an atmospheric remote plasma device or the like can be adopted.

The aligner 40 further irradiates the edge portion of the substrate W with light in the ultraviolet region (200 nm to 380 nm) from above the edge portion, for example, light having a wavelength of 365 nm as excitation light on the edge portion of the substrate W. A sensor (spectral photometer) configured to measure the absorbance by looking at the reflected light from the edge, or a sensor (fluorescent reflection) for irradiating light in the fluorescent region and monitoring the intensity of the reflected light. A film thickness meter) may be provided.

This sensor (not shown) may be provided in the organic matter desorption device 45, or may be separately provided in the aligner 40. The control unit of the plating apparatus according to the present embodiment removes contaminants (organic substances and oxide film) at the edge portion depending on whether or not the value of absorbance or fluorescence intensity measured by this sensor is larger than a preset threshold value. It is configured so that it can be determined whether or not (including) is sufficiently removed. For example, if it is determined that the contaminants on the edge portion are not sufficiently removed, the organic matter desorption device 45 may repeatedly carry out the step of locally radiating UV or plasma to the edge portion of the substrate W. Good. Further, when it is determined that the contaminants on the edge portion are sufficiently removed, the substrate W is transported to the fixing unit 120 by the substrate transport device 122, assuming that the removal of the organic matter is completed. A series of plating treatments following the above are carried out. In this way, it is determined whether or not there is a pollutant on the edge portion of the substrate W before the plating treatment, and then the plating treatment is performed on the substrate on which no pollutant remains on the edge portion. It is possible to more reliably prevent deterioration of the in-plane uniformity of the plating film thickness of the substrate W due to variations in the contact resistance of the electrical contacts of the substrate holder 60.

FIG. 7 is a flow chart showing a plating method according to the first embodiment. In this plating method, first, a resist pattern is formed on the substrate W before the substrate W is conveyed to the plating apparatus shown in FIG. 1 (step S601). Subsequently, the substrate W on which the resist pattern is formed is irradiated with UV, the resist residue on the surface of the substrate W is removed (ashing treatment), and the resist surface is hydrophilized (discum treatment) (step S602). The processing of steps S601 and S602 is performed in any device other than the plating device shown in FIG.

Subsequently, the substrate W is transported from the hoop 102 accommodating the substrate W to the aligner 40 by the substrate transport device 122. In the aligner 40, the edge portion of the substrate W is cleaned (step S603). Specifically, in the aligner 40, UV or plasma is locally applied to the edge portion of the substrate W by the organic matter desorption device 45, and the organic matter is desorbed. At this time, the orientation of the substrate W is aligned by the aligner 40.

Although not shown in the flow shown in FIG. 7, when the aligner 40 is provided with a sensor (not shown), UV or plasma is applied to at least one of the organic matter and the oxide film existing at the edge of the substrate W. After local removal by applying, the presence or absence of contaminants (including organic substances and oxide film) at the edges can be confirmed. Specifically, first, a sensor (spectrophotometer or fluorescence reflection film thickness meter) is positioned above the surface of the substrate W arranged on the aligner 40. The ultraviolet region (200 nm) from the sensor toward the surface of the substrate W while scanning the sensor from the center of the substrate to the edge (or from the edge to the center of the substrate) while the substrate W is rotated or stationary by the aligner 40. Light of (from 380 nm), for example, light having a wavelength of 365 nm is irradiated as excitation light, and the absorbance or fluorescence intensity is measured.

The substrate surface has an edge portion that has been subjected to UV or plasma treatment and a surface to be plated that has not been subjected to UV or plasma treatment, and the seed layer is the entire surface of the substrate surface (surface to be plated and edge portion). Is formed in. Then, by scanning the sensor on the surface to be plated and the edge portion, the absorbance or fluorescence intensity of both the surface to be plated and the edge portion can be measured. The control unit of the plating apparatus compares, for example, the absorbance of both the surface to be plated and the edge portion, and for example, the value of the ratio of the absorbance of the edge portion to the absorbance of the surface to be plated is a preset threshold value (for example, 50% or less). Whether or not it is larger can determine whether or not the contaminants (including organic substances and oxide film) at the edge portion are sufficiently removed. When the value of the above ratio is larger than the threshold value, it can be determined that the contaminants (including organic substances and oxide film) at the edge portion are not sufficiently removed. Further, when the value of the above ratio is not larger than the threshold value, it can be determined that the contaminants (including organic substances and oxide film) at the edge portion are sufficiently removed. When measuring the fluorescence intensity, it is possible to determine whether or not the contaminants on the edge portion are sufficiently removed by similarly comparing the predetermined threshold value with the measured value.

If it is determined based on this determination that the contaminants on the edge portion are not sufficiently removed, the step of locally radiating UV or plasma to the edge portion of the substrate W may be repeated. Further, when it is determined that the contaminants on the edge portion have been sufficiently removed, it is assumed that the desorption of organic substances has been completed, and the contaminants are transported to the fixing unit 120 by the substrate transport device 122, and a series of plating treatments are performed. To. In this way, it is determined whether or not there is a pollutant on the edge portion of the substrate W before the plating treatment, and then the plating treatment is performed on the substrate on which no pollutant remains on the edge portion. It is possible to more reliably prevent deterioration of the in-plane uniformity of the plating film thickness of the substrate W due to variations in the contact resistance of the electrical contacts of the substrate holder 60.

The substrate W whose edge portion has been cleaned is transported to the fixing unit 120 by the substrate transport device 122 and set in the substrate holder 60 (step S604). At this time, since the organic matter at the edge portion of the substrate W is desorbed, the electrical contact of the substrate holder 60 comes into contact with the edge portion of the cleaned substrate W. As a result, it is possible to reduce variations in the contact resistance of the electrical contacts of the substrate holder 60 due to the adhesion of organic substances.

The substrate W held in the substrate holder 60 is first conveyed to the pre-wet tank 126 by the substrate holder transfer device 140, and the substrate W is immersed in the pure water contained in the pre-wet tank 126 (step S605). Subsequently, the substrate W is conveyed to the pre-soak tank 128, and the surface of the substrate W is acid-cleaned (step S606). Specifically, the substrate W is immersed in a chemical solution such as sulfuric acid or nitric acid contained in the pre-soak tank 128, and the oxide film on the surface of the seed layer formed on the surface of the substrate is removed by etching.

Although not shown in the flow shown in FIG. 7, the acid-cleaned substrate W is subsequently immersed in pure water contained in the first cleaning tank 130a to clean the chemical solution adhering to the surface of the substrate W. Good. Subsequently, the substrate W is immersed in any of the plating cells 134 of the plating tank 10 to perform a plating process (step S607). A QDR (Quick Damp Rinse) treatment is performed on the substrate W on which the plating film is formed on the surface (step S608). Specifically, the substrate W is immersed in pure water contained in the second cleaning tank 130b to clean the plating solution adhering to the surface of the substrate W.

Subsequently, the substrate W held by the substrate holder 60 is conveyed to the fixing unit 120, and the substrate W is removed from the substrate holder 60. The substrate transfer device 122 receives the substrate W from the fixing unit 120 and conveys the substrate W to the spin rinse dryer 20. The surface of the substrate W is cleaned and dried in the spin rinse dryer 20 (step S609).

As described above, according to the present embodiment, the organic matter existing at the edge portion of the substrate W can be locally removed before being set in the substrate holder 60. Therefore, the variation in the contact resistance of the electrical contact 72 of the substrate holder 60 due to the organic matter existing at the edge of the substrate W is suppressed without adversely affecting the resist pattern formed on the surface of the substrate W.
It is possible to prevent deterioration of the uniformity of the plating film thickness.

Further, according to the present embodiment, UV or plasma can be locally emitted to the edge portion of the substrate W. As a result, UV or plasma is not radiated to the surface other than the edge portion of the substrate W, that is, the portion of the substrate W on which the resist is applied, so that the edge portion of the substrate W is not damaged. Organic matter can be desorbed.

Further, according to the present embodiment, since the organic matter desorption device 45 is provided in the aligner 40, the edge portion of the substrate W can be processed by the UV irradiation device or the plasma irradiation device while rotating the substrate by the aligner 40. .. Therefore, it is not necessary to provide the organic matter desorption device 45 with a mechanism for rotating the substrate, so that the cost can be reduced. Further, by providing the organic matter desorption device 45 in the aligner 40, the footprint of the entire plating device can be reduced.

The organic matter desorption device 45 may be provided in the plating device separately from the aligner 40. FIG. 8 is an overall layout of the plating apparatus of another example according to the first embodiment. As shown in FIG. 8, the organic matter desorption device 45 is provided in the load / unload section 170A separately from the aligner 40. In this case, the aligner 40 has a configuration in which the organic matter desorption device 45 is removed from the configuration shown in FIGS. 4 to 6. On the other hand, the organic matter desorption device 45 needs to have a mechanism similar to that of the rotation stage 42 shown in FIGS. 4 to 6 for rotating the substrate W. According to the plating apparatus shown in FIG. 8, since the organic matter desorption device 45 is provided separately from the aligner 40, the treatment of the organic matter desorption device 45 and the treatment of the aligner 40 are performed separately for the plurality of substrates W. be able to. Therefore, when the throughput of the entire treatment is determined by the treatment time of the organic matter desorption treatment due to the time required for the organic matter desorption treatment, the throughput is increased as compared with the plating apparatus shown in FIG. Can be improved. The organic matter desorption device 45 can also be provided in the spin rinse dryer 20. Even in this case, the spin rinse dryer 20 is irradiated with a sensor (spectrophotometer) configured to measure the absorbance, or a sensor for irradiating light in the fluorescence region and monitoring the intensity of the reflected light (a sensor for monitoring the intensity of the reflected light). A fluorescence reflection film meter) may be provided (not shown). In that case, the sensor is positioned above the edge portion of the substrate W during or after cleaning the edge portion. Then, the substrate W is rotated, the edge portion of the substrate W is irradiated with light from this sensor, the light reflected from the substrate W is received by the light receiving portion of the sensor, and the fluorescence intensity or absorbance of the reflected light is measured. .. Thereby, it may be determined whether or not the contaminant (at least one of the organic substance and the oxide film) at the edge portion of the substrate W has been sufficiently removed. By doing so, it is determined whether or not there is a contaminant on the edge portion of the substrate W before the plating treatment is performed, and then the substrate on which no contaminant is left on the edge portion is plated. Therefore, deterioration of the in-plane uniformity of the plating film thickness of the substrate W due to the variation in the contact resistance of the electrical contacts of the substrate holder 60 can be more reliably prevented. If it is determined whether or not a contaminant is present on the edge of the substrate W during cleaning of the edge of the substrate W, the end point of cleaning is determined based on the determination result of this sensor. You can also do it.

<Second Embodiment>
FIG. 9 is an overall layout view of the plating apparatus according to the second embodiment. In the second embodiment, the configurations of the spin rinse dryer 20 and the aligner 40 are different from those of the plating apparatus shown in FIG. 1 of the first embodiment. Since other configurations are the same as those of the first embodiment, the same reference numerals are given to the same configurations as those of the first embodiment, and the description thereof will be omitted.

In the second embodiment, the aligner 40 does not include the organic matter desorption device 45 described in the first embodiment. Further, the spin rinse dryer 20 has an oxide film removing device for locally removing the oxide film existing at the edge portion of the substrate before being set in the substrate holder 60.

FIG. 10 is a schematic view showing a spin rinse dryer 20 provided with an oxide film removing device. As shown, the spin rinse dryer 20 includes a rotary stage 21, a substrate chuck 22, a DIW nozzle 23, and an oxide film removing device 24 (corresponding to an example of an edge cleaning device). The substrate chuck 22 is configured to grip the outer peripheral portion of the substrate W. The rotation stage 21 is configured to rotate the substrate chuck 22, and when the substrate chuck 22 rotates, the gripped substrate W is rotated in the circumferential direction. The DIW nozzle 23 is configured to supply DIW (De-ionized Water) to a substantially central portion of the substrate W. The DIW supplied to the substrate W receives centrifugal force due to the rotation of the substrate W and flows toward the outer peripheral portion of the substrate W. Although not shown, the spin rinse dryer 20 has a cover that covers the periphery of the substrate W in order to prevent the DIW of the substrate W from scattering to the outside.

The oxide film removing device 24 is a chemical solution supply device that supplies the chemical solution 28 to the substrate, and swivels the chemical solution nozzle 25 configured to supply the chemical solution 28, the arm 26 connected to the chemical solution nozzle 25, and the arm 26. It has a rotating shaft 27 configured to do so. The distance between the tip of the chemical solution nozzle 25 and the substrate W is preferably about 1 mm or more and about 10 mm or less. If this distance is less than 1 mm, the substrate and the chemical solution nozzle 25 may come into physical contact with each other. Further, if this distance is more than 10 mm, there is a possibility that the chemical solution cannot be locally supplied. In order to ensure that the substrate and the chemical solution nozzle 25 are not in physical contact with each other and that the chemical solution can be locally supplied, the distance between the tip of the chemical solution nozzle 25 and the substrate is about 2 mm or more and about 5 mm. The following is more preferable.

In order to locally remove the oxide film existing at the edge of the substrate W by the oxide film removing device 24, first, the oxide film removing device 24 swirls the arm 26 according to the diameter of the substrate W, and the chemical solution nozzle. 25 is positioned above the edge portion of the substrate W. With the chemical solution nozzle 25 located above the edge portion of the substrate W, the DIW nozzle 23 supplies DIW to the substantially central portion of the rotating substrate W, and the chemical solution 28 is ejected to the edge portion of the rotating substrate W. The chemical solution 28 is supplied to the edge portion of the substrate W and receives centrifugal force due to the rotation of the substrate W to flow toward the outer peripheral portion of the substrate W. As a result, the oxide film removing device 24 can locally supply the chemical solution 28 to the edge portion of the substrate W. In other words, the region other than the edge portion of the substrate W is not substantially exposed to the chemical solution 28. By rotating the substrate W by the rotating stage 21, the chemical liquid 28 can be efficiently supplied over the entire circumference of the edge portion of the substrate W. When the chemical solution 28 is supplied to the oxide film formed on the edge portion of the substrate W, the oxide film is dissolved and removed by the chemical solution 28. After supplying the chemical solution 28 for a predetermined time, the supply of the chemical solution 28 is stopped and the supply of DIW is continued. As a result, the chemical solution 28 supplied to the edge portion of the substrate W is washed away. Here, the edge portion of the substrate W is a region where the electrical contacts 72 can come into contact as described above, or when the substrate W is held by the substrate holder 60, the substrate W is more than a portion where the seal member 70 is in contact. This is a region on the peripheral edge side of W. However, when the chemical solution is supplied to the substrate in a spot manner, it is assumed in advance that a part of the chemical solution may be scattered, and the chemical solution component / concentration that does not adversely affect the resist pattern is set, and then the substrate W It can also be configured to dissolve and remove the oxide film in the peripheral portion of the edge portion with the chemical solution 28.

As the chemical solution 28, an acid such as dilute sulfuric acid or citric acid that does not easily damage the seed layer on the substrate W can be adopted. In the present embodiment, the chemical solution 28 is preferably dilute sulfuric acid of 3 wt% or more and 15 wt% or less or citric acid of 2 wt% or more and 20 wt% or less. If the dilute sulfuric acid is less than 3 wt% or the citric acid is less than 2 wt%, the acid concentration may be too low to properly remove the oxide film. Further, if the dilute sulfuric acid is more than 15 wt% or the citric acid is more than 20 wt%, the acid concentration may be too high and the seed layer on the edge portion of the substrate may be dissolved.

FIG. 11 is a flow chart showing a plating method according to the second embodiment. The plating method according to the second embodiment is consistent with the plating method shown in FIG. 7 in many respects except for a part. Therefore, a part of the description of the same part as the plating method of FIG. 7 will be omitted.

The substrate W subjected to the ashing treatment and the discum treatment in step S602 is conveyed to the plating apparatus shown in FIG. Subsequently, the substrate W is transported from the hoop 102 accommodating the substrate W to the spin rinse dryer 20 by the substrate transport device 122. In the spin rinse dryer 20, the edge portion of the substrate W is cleaned (step S701). Specifically, in the spin rinse dryer 20, the oxide film existing at the edge portion of the substrate W is removed by the oxide film removing device 24.

Further, also in the present embodiment, in order to measure the state of the edge portion of the substrate, the edge portion of the substrate W is irradiated with light in the ultraviolet region (200 nm to 380 nm), for example, 365 nm as excitation light from above the edge portion. , Spin rinse a sensor (spectral photometer) configured to measure the absorbance at the edge, or a sensor (fluorescence reflection film thickness meter) for irradiating light in the fluorescent region and monitoring the intensity of the reflected light. It may be provided on the dryer 20 (not shown). In that case, the sensor is positioned above the edge portion of the substrate W during or after cleaning the edge portion. Then, the substrate W is rotated, the edge portion of the substrate W is irradiated with light from this sensor, the light reflected from the substrate W is received by the light receiving portion of the sensor, and the fluorescence intensity or absorbance of the reflected light is measured. .. As a result, it may be determined whether or not the oxide film at the edge portion of the substrate W has been sufficiently removed, and the state of the edge portion may be inspected. By doing so, it is determined whether or not there is a contaminant on the edge portion of the substrate W before the plating treatment is performed, and then the substrate on which no contaminant is left on the edge portion is plated. Therefore, deterioration of the in-plane uniformity of the plating film thickness of the substrate W due to the variation in the contact resistance of the electrical contacts of the substrate holder 60 can be more reliably prevented.

The substrate W whose edge portion has been cleaned (cleaned and inspected in some cases) is transported to the fixing unit 120 by the substrate transport device 122 and set in the substrate holder 60 (step S604). At this time, since the oxide film on the edge portion of the substrate W has been removed, the electrical contact of the substrate holder 60 comes into contact with the edge portion of the cleaned substrate W. This makes it possible to reduce variations in the contact resistance of the electrical contacts of the substrate holder 60 due to the oxide film. The substrate W set in the substrate holder 60 is processed in the subsequent steps S605 to S609.

As described above, according to the second embodiment, the oxide film existing at the edge portion of the substrate can be locally removed before being set in the substrate holder 60. Therefore, the variation in the contact resistance of the electrical contact 72 of the substrate holder 60 due to the oxide film existing at the edge of the substrate W is suppressed without adversely affecting the resist pattern formed on the surface of the substrate W, and the plating film is plated. It is possible to prevent deterioration of thickness uniformity.

Further, according to the second embodiment, since the oxide film removing device 24 is provided in the spin rinse dryer 20, the edge portion of the substrate W can be treated with the chemical solution 28 while rotating the substrate by the spin rinse dryer 20. .. Therefore, it is not necessary to provide the oxide film removing device 24 with a mechanism for rotating the substrate and a mechanism for preventing the chemical solution 28 from scattering, so that the cost can be reduced. Further, since the spin rinse dryer 20 has a cover for preventing the liquid on the substrate W from scattering, it also prevents the chemical solution 28 supplied by the chemical solution nozzle 25 from scattering to the outside of the spin rinse dryer 20. be able to. Further, by providing the oxide film removing device 24 on the spin rinse dryer 20, the footprint of the entire plating device can be reduced.

A seed layer is formed on the substrate W to be plated, and if the chemical solution 28 is left to adhere to the seed layer, the seed layer may melt. Therefore, when the chemical solution 28 adheres to a portion other than the edge of the substrate W to be plated, for example, the seed layer exposed from the opening of the resist pattern, sufficient cleaning is required so that the chemical solution 28 does not remain. According to the second embodiment, the chemical solution 28 can be locally supplied to the edge portion of the substrate W. As a result, the oxide film formed on the edge portion of the substrate can be removed without adhering the chemical solution 28 to the seed layer exposed from the opening of the resist pattern. Therefore, the cleaning time of the substrate W can be significantly shortened as compared with the case where the chemical solution 28 is adhered to the entire surface of the substrate W.

<Third Embodiment>
FIG. 12 is an overall layout view of the plating apparatus according to the third embodiment. The plating apparatus according to the third embodiment has a configuration in which the spin rinse dryer 20 in the plating apparatus shown in FIG. 8 in the first embodiment is replaced with the spin rinse dryer 20 shown in FIG. 10 according to the second embodiment. .. Since other configurations are the same as those of the plating apparatus shown in FIG. 8 of the first embodiment, the same configurations as those of the first embodiment are designated by the same reference numerals and the description thereof will be omitted.

The plating apparatus shown in FIG. 12 includes a spin rinse dryer 20 provided with the oxide film removing apparatus 24 shown in FIG. 10 and an organic matter desorption apparatus 45. Therefore, this plating apparatus can locally remove both the organic substance and the oxide film existing at the edge portion of the substrate W.

FIG. 13 is a flow chart showing a plating method according to a third embodiment. The plating method according to the third embodiment is a method in which the plating method shown in FIG. 7 is combined with step S701 shown in FIG. That is, as shown in FIG. 13, the substrate W subjected to the ashing treatment and the discard treatment in step S602 is conveyed to the plating apparatus shown in FIG. Subsequently, the substrate W is transported from the hoop 102 accommodating the substrate W to the aligner 40 by the substrate transport device 122. In the aligner 40, the edge portion of the substrate W is cleaned (step S603). Specifically, in the aligner 40, the organic matter existing at the edge portion of the substrate W is desorbed by the organic matter desorption device 45. At this time, the orientation of the substrate W is aligned by the aligner 40. The edge portion here is a region that is closer to the peripheral edge portion of the substrate W than the portion that the sealing member 70 contacts when the substrate W is held by the substrate holder 60, and is, for example, outside the substrate W. It means within a range of about 5 mm from the peripheral edge portion toward the center of the substrate, more preferably within a range of about 2 mm.

Further, also in the present embodiment, in order to measure the state of the edge portion of the substrate, the aligner 40 is excited with light in the ultraviolet region (200 nm to 380 nm), for example, 365 nm, from above the edge portion on the edge portion of the substrate W. A sensor (spectral photometer) configured to irradiate as light and measure the absorbance at the edge, or a sensor (fluorescence reflection film thickness meter) for irradiating light in the fluorescent region and monitoring the intensity of the reflected light. ) May be provided (not shown). The control unit of the plating apparatus is sufficiently free from contaminants (including organic substances and oxide films) at the edges depending on whether the absorbance or fluorescence intensity value measured by this sensor is larger than a preset threshold value. It is configured so that it can be determined whether or not it has been removed. In that case, the sensor is positioned above the edge portion of the substrate W during or after cleaning the edge portion. Then, the substrate W is rotated, the edge portion of the substrate W is irradiated with light from this sensor, the light reflected from the substrate W is received by the light receiving portion of the sensor, and the fluorescence intensity or absorbance of the reflected light is measured. .. As a result, it is determined whether or not the contaminants (including organic substances and oxide film) at the edge portion of the substrate W are sufficiently removed, and whether or not the contaminants are present at the edge portion is also determined. Good. By doing so, it is determined whether or not there is a contaminant on the edge portion of the substrate W before the plating treatment is performed, and then the substrate on which no contaminant is left on the edge portion is plated. Therefore, it is possible to prevent deterioration of the in-plane uniformity of the plating film thickness of the substrate W due to the variation in the contact resistance of the electrical contacts of the substrate holder 60. Further, when it is determined whether or not a contaminant is present on the edge portion of the substrate W during cleaning of the edge portion of the substrate W, the end point of cleaning is determined based on the determination result of this sensor. You can also do it. Further, the presence or absence of the substrate W having an abnormality in the edge portion can be determined based on the measurement result of the sensor.

The substrate W from which the organic matter at the edge portion has been removed is subsequently conveyed to the spin rinse dryer 20 by the substrate transfer device 122. In the spin rinse dryer 20, the edge portion of the substrate W is cleaned (step S701). Specifically, in the spin rinse dryer 20, the oxide film existing at the edge portion of the substrate W is removed by the oxide film removing device 24. The edge portion here refers to a region that is closer to the peripheral edge of the substrate W than the portion that the sealing member 70 contacts when the substrate is held by the substrate holder. For example, when the substrate W is a 300 mm wafer. Is within a range of about 5 mm, more preferably about 2 mm from the outer peripheral edge of the substrate W toward the center of the substrate, but the component / concentration of the chemical solution is set to a component / concentration that does not adversely affect the resist pattern. Therefore, the oxide film existing around the edge portion can also be removed.

The substrate W whose edge portion has been cleaned is transported to the fixing unit 120 by the substrate transport device 122 and set in the substrate holder 60 (step S604). At this time, since the organic matter and the oxide film on the edge portion of the substrate W have been removed, the electrical contacts of the substrate holder 60 come into contact with the edge portion of the cleaned substrate W. As a result, it is possible to reduce variations in the contact resistance of the electrical contacts of the substrate holder 60 due to organic substances and the oxide film. The substrate W set in the substrate holder 60 is processed in the subsequent steps S605 to S609.

As described above, according to the third embodiment, the organic matter and the oxide film existing at the edge portion of the substrate can be locally removed before being set in the substrate holder 60. Therefore, the variation in the contact resistance of the electrical contact 72 of the substrate holder 60 due to the organic matter and the oxide film existing at the edge of the substrate W is suppressed without adversely affecting the resist pattern formed on the surface of the substrate W. It is possible to prevent deterioration of the uniformity of the plating film thickness.

At the edge portion of the substrate W, an organic substance may adhere to the oxide film. Therefore, if the oxide film is removed before the organic substance is desorbed, it is difficult to remove the oxide film on the portion to which the organic substance is attached. According to the third embodiment, since the oxide film is removed after the organic substance is desorbed, the organic substance and the oxide film can be effectively removed. However, in one embodiment, the organic substance desorption treatment (step S603) may be performed after the chemical solution cleaning of the edge portion (step S701).

<Fourth Embodiment>
FIG. 14 is an overall layout view of the plating apparatus according to the fourth embodiment. The plating apparatus of the fourth embodiment is different from the plating apparatus of FIG. 1 according to the first embodiment in that it has a sponge cleaning apparatus 80 and does not include an organic matter desorbing apparatus 45. Since other configurations are the same as those of the first embodiment, the same reference numerals are given to the same configurations as those of the first embodiment, and the description thereof will be omitted.

The aligner 40 of the plating apparatus shown in FIG. 14 does not include the organic matter desorption apparatus 45 described in the first embodiment. The sponge cleaning device 80 is provided in the load / unload portion 170A and locally removes particles existing at the edge portion of the substrate W.

FIG. 15 is a schematic side view of the sponge cleaning device 80. As shown, the sponge cleaning device 80 includes a rotary stage 81, a DIW nozzle 83, a sponge cleaning unit 84 (corresponding to an example of the edge cleaning device), and a cover 88. The rotation stage 81 is configured to attract the back surface of the substrate W, and rotates the substrate W in the circumferential direction. The rotary stage 81 is
The substrate W is adsorbed by an electrostatic adsorption type or a vacuum adsorption type. The DIW nozzle 83 is configured to supply DIW to a substantially central portion of the substrate W. The DIW supplied to the substrate W receives centrifugal force due to the rotation of the substrate W and flows toward the outer peripheral portion of the substrate W. The cover 88 covers the periphery of the substrate W and prevents the DIW of the substrate W from scattering to the outside.

The sponge cleaning unit 84 has a sponge head 85 that physically cleans the edge portion of the substrate W, an arm 86 connected to the sponge head 85, and a rotating shaft 87 configured to rotate the arm 86. The sponge head 85 is made of, for example, PVA (polyvinyl alcohol) and is rotatably configured about a vertical axis. Further, the rotating shaft 87 is configured to be expandable and contractible in the axial direction.

In order for the sponge cleaning unit 84 to locally remove particles existing at the edge portion of the substrate W, first, the sponge cleaning device 80 swirls the arm 86 according to the diameter of the substrate W, and the sponge head 85 is moved to the substrate W. It is located above the edge of the. With the sponge head 85 located above the edge of the substrate W, the rotating shaft 87 contracts downward in the axial direction to bring the sponge head 85 into contact with the edge of the substrate W. The sponge cleaning unit 84 rotates the sponge head 85 in a state where the sponge head 85 is in contact with the edge portion of the rotating substrate W. At this time, DIW is supplied to the substrate W by the DIW nozzle 83. As a result, the sponge cleaning device 80 can locally remove particles at the edge portion of the substrate W. Further, the sponge cleaning device 80 may be provided with a sensor (not shown) to determine whether or not a contaminant is present at the edge portion.

FIG. 16 is a flow chart showing a plating method according to a fourth embodiment. The plating method according to the fourth embodiment includes step S801 instead of step S603 in the plating method shown in FIG. 7 according to the first embodiment. A part of the description of the same part as the plating method of FIG. 7 will be omitted.

In the flow shown in FIG. 16, the substrate W subjected to the ashing treatment and the discard treatment in step S602 is conveyed to the plating apparatus shown in FIG. Subsequently, the substrate W is transported from the hoop 102 accommodating the substrate W to the sponge cleaning device 80 by the substrate transport device 122. In the sponge cleaning device 80, the edge portion of the substrate W is cleaned (step S801). Specifically, in the sponge cleaning device 80, particles existing at the edge portion of the substrate W are removed by the sponge cleaning unit 84.

Also in this embodiment, in order to measure the state of the edge portion of the substrate, the sponge cleaning device 80 excites light in the ultraviolet region (200 nm to 380 nm), for example, 365 nm, from above the edge portion of the substrate W. A sensor (spectrophotometer) configured to irradiate as light and measure the absorbance at the edge, or a sensor (fluorescence reflection film thickness meter) for irradiating light in the fluorescent region and monitoring the intensity of the reflected light. ) May be provided (not shown). The control unit of the plating apparatus is sufficiently free from contaminants (including organic substances and oxide films) at the edges depending on whether the absorbance or fluorescence intensity value measured by this sensor is larger than a preset threshold value. It is configured so that it can be determined whether or not it has been removed. When the sensor is provided in the sponge cleaning device 80, the sensor is positioned above the edge portion of the substrate W during or after cleaning the edge portion. Then, the substrate W may be rotated to determine the presence or absence of particles at the edge portion of the substrate W, and it may be determined whether or not a contaminant is present at the edge portion. By doing so, it is determined whether or not there is a contaminant on the edge portion of the substrate W before the plating treatment is performed, and then the substrate on which no contaminant is left on the edge portion is plated. Therefore, it is possible to prevent deterioration of the in-plane uniformity of the plating film thickness of the substrate W due to the variation in the contact resistance of the electrical contacts of the substrate holder 60. Further, when it is determined whether or not a contaminant is present on the edge portion of the substrate W during cleaning of the edge portion of the substrate W, the end point of cleaning is determined based on the determination result of this sensor. You can also do it. Further, the presence or absence of the substrate W having an abnormality in the edge portion can be determined based on the measurement result of the sensor.

The substrate W whose edge portion has been cleaned is transported to the fixing unit 120 by the substrate transport device 122 and set in the substrate holder 60 (step S604). At this time, since the particles at the edge portion of the substrate W have been removed, the electrical contacts of the substrate holder 60 come into contact with the edge portion of the cleaned substrate W. As a result, it is possible to reduce variations in the contact resistance of the electrical contacts of the substrate holder 60 due to particles. The substrate W set in the substrate holder 60 is processed in the subsequent steps S605 to S609.

As described above, according to the fourth embodiment, the particles existing at the edge portion of the substrate W can be locally removed before being set in the substrate holder 60. Therefore, it is possible to prevent particles from being sandwiched between the electrical contacts of the substrate holder 60 and the seed layer on the edge portion of the substrate W, and it is possible to suppress deterioration of contact resistance due to the particles.

<Fifth Embodiment>
FIG. 17 is an overall layout of the plating apparatus according to the fifth embodiment. The plating apparatus of the fifth embodiment is different from the plating apparatus of FIG. 1 according to the first embodiment in that it has a sponge chemical solution cleaning device 90. Since other configurations are the same as those of the first embodiment, the same reference numerals are given to the same configurations as those of the first embodiment, and the description thereof will be omitted.

The sponge chemical solution cleaning device 90 shown in FIG. 17 is provided in the load / unload portion 170A, and locally removes the oxide film and particles existing at the edge portion of the substrate W. Further, although not shown in FIG. 17, in the sponge chemical cleaning device 90 as well, a sensor (not shown) is provided in the vicinity of the substrate W located above the edge portion, and whether or not contaminants are present on the edge portion. May be determined. In this case, the edge portion of the substrate W is irradiated with light in the ultraviolet region (200 nm to 380 nm), for example, 365 nm as excitation light from above the edge portion, and a sensor (spectrophotometric intensity) configured to measure the absorbance of the edge portion is measured. A sensor (fluorescence reflection film thickness meter) for irradiating light in the fluorescence region and monitoring the intensity of the reflected light may be provided (not shown). The control unit of the plating apparatus is sufficiently free from contaminants (including organic substances and oxide films) at the edges depending on whether the absorbance or fluorescence intensity value measured by this sensor is larger than a preset threshold value. It is configured so that it can be determined whether or not it has been removed.

FIG. 18 is a schematic side view of the sponge chemical solution cleaning device 90. As shown in the figure, the sponge chemical cleaning device 90 has a rotary stage 91, a DIW nozzle 93, a sponge cleaning unit 84, an oxide film removing device 94 (corresponding to an example of the edge cleaning device), and a cover 98. .. The rotation stage 91 is configured to attract the back surface of the substrate W, and rotates the substrate W in the circumferential direction. The rotary stage 91 sucks the substrate W by an electrostatic suction type or a vacuum suction type.

The oxide film removing device 94 is a chemical solution supply device that supplies a chemical solution to a substrate, and has a chemical solution nozzle 95 configured to supply the chemical solution, an arm 96 connected to the chemical solution nozzle 95, and an arm 96 so as to rotate. It has a rotating shaft 97 configured in. The distance between the tip of the chemical solution nozzle 95 and the substrate W is preferably about 1 mm or more and about 10 mm or less. If this distance is less than 1 mm, the substrate and the chemical solution nozzle 95 may come into physical contact with each other. Further, if this distance is more than 10 mm, there is a possibility that the chemical solution cannot be locally supplied. In order to ensure that the substrate and the chemical solution nozzle 95 are not in physical contact with each other and that the chemical solution can be locally supplied, the distance between the tip of the chemical solution nozzle 95 and the substrate is about 2 mm or more and about 5 mm. The following is more preferable.

In order to locally remove the oxide film existing at the edge of the substrate W by the sponge chemical cleaning device 90, first, the oxide film removing device 94 swivels the arm 96 according to the diameter of the substrate W, and the chemical liquid nozzle The 95 is positioned above the edge portion of the substrate W. With the chemical solution nozzle 95 located above the edge portion of the substrate W, DIW is supplied from the DIW nozzle 93 to the substantially central portion of the rotating substrate W, and the chemical solution is ejected to the edge portion of the rotating substrate W. The chemical solution is supplied to the edge portion of the substrate W and receives centrifugal force due to the rotation of the substrate W to flow toward the outer peripheral portion of the substrate W. As a result, the oxide film removing device 94 can locally supply the chemical solution to the edge portion of the substrate W. In other words, the region other than the edge portion of the substrate W is substantially not exposed to the chemical solution. By rotating the substrate W by the rotation stage 91, the chemical solution can be efficiently supplied over the entire circumference of the edge portion of the substrate W. When the chemical solution is supplied to the oxide film formed on the edge portion of the substrate W, the oxide film is dissolved and removed by the chemical solution. After supplying the chemical solution for a predetermined time, the supply of the chemical solution is stopped and the supply of DIW is continued. As a result, the chemical solution supplied to the edge portion of the substrate W is washed away. Here, the edge portion of the substrate W is a region where the electrical contacts 72 can come into contact as described above, or when the substrate W is held by the substrate holder 60, the substrate W is more than a portion where the seal member 70 is in contact. This is a region on the peripheral edge side of W. However, when the chemical solution is supplied to the substrate in a spot manner, it is assumed in advance that a part of the chemical solution may be scattered, and the chemical solution component / concentration that does not adversely affect the resist pattern is set, and then the substrate W is used. It can also be configured to dissolve and remove the oxide film in the peripheral portion of the edge portion with the chemical solution 28.

Further, the sponge chemical cleaning device 90 can locally remove particles existing at the edge portion of the substrate W by the sponge cleaning portion 84 while removing the oxide film at the edge portion of the substrate W by the oxide film removing device 94. it can. Also in this embodiment, in order to measure whether or not a contaminant is present on the edge portion of the substrate, light in the ultraviolet region (200 nm to 380 nm) from above the edge portion on the edge portion of the substrate W is used. For example, a sensor (spectrophotometer) configured to irradiate 365 nm as excitation light and measure the absorbance at the edge, or a sensor (fluorescence) for irradiating light in the fluorescence region and monitoring the intensity of the reflected light. A reflective film thickness meter) may be provided in the sponge chemical cleaning device 90 (not shown). The control unit of the plating apparatus is sufficiently free from contaminants (including organic substances and oxide films) at the edges depending on whether the absorbance or fluorescence intensity value measured by this sensor is larger than a preset threshold value. It is configured so that it can be determined whether or not it has been removed. In that case, the substrate W can be rotated with the sensor positioned above the edge portion of the substrate W during or after cleaning the edge portion, and it can be determined whether or not a contaminant is present on the edge portion. By doing so, it is determined whether or not there is a contaminant on the edge portion of the substrate W before the plating treatment is performed, and then the substrate on which no contaminant is left on the edge portion is plated. Therefore, it is possible to prevent deterioration of the in-plane uniformity of the plating film thickness of the substrate W due to the variation in the contact resistance of the electrical contacts of the substrate holder 60. Further, when it is determined whether or not a contaminant is present on the edge portion of the substrate W during cleaning of the edge portion of the substrate W, the end point of cleaning is determined based on the determination result of this sensor. You can also do it. Further, the presence or absence of the substrate W having an abnormality in the edge portion can be determined based on the measurement result of the sensor.

FIG. 19 is a flow chart showing a plating method according to a fifth embodiment. The plating method according to the fifth embodiment includes step S901 in addition to the plating method shown in FIG. 7 according to the first embodiment. A part of the description of the same part as the plating method of FIG. 7 will be omitted.

In step S603, the organic matter desorption device 45 (see FIGS. 4 to 6) included in the aligner 40 desorbs the organic matter existing at the edge portion of the substrate W. Subsequently, the substrate W is transported to the sponge chemical cleaning device 90 by the substrate transport device 122. In the sponge chemical solution cleaning device 90, the edge portion of the substrate W is cleaned (step S901). Specifically, in the sponge chemical solution cleaning device 90, particles and an oxide film existing at the edge portion of the substrate W are removed. Further, although not shown in FIG. 19, a contaminant is present on the edge portion in order to determine the presence or absence of organic substances, oxide films, particles, etc. on the edge portion of the substrate W whose edge portion has been washed. It may be determined whether or not it is present.

The substrate W whose edge portion has been cleaned is transported to the fixing unit 120 by the substrate transport device 122 and set in the substrate holder 60 (step S604). At this time, the electrical contacts of the substrate holder 60 come into contact with the edge portion of the cleaned substrate W. As a result, it is possible to reduce variations in the contact resistance of the electrical contacts of the substrate holder 60 due to particles. The substrate W set in the substrate holder 60 is processed in the subsequent steps S605 to S609.

As described above, according to the fifth embodiment, organic substances, oxide films, and particles existing at the edge portion of the substrate W can be locally removed before being set in the substrate holder 60. Therefore, it is possible to suppress variations in the contact resistance of the electrical contacts 72 of the substrate holder 60 due to organic substances, oxide films, and particles existing at the edges of the substrate W, and prevent deterioration of the uniformity of the plating film thickness. ..

<Sixth Embodiment>
FIG. 20 is an overall layout of the plating apparatus according to the sixth embodiment. The plating apparatus of the sixth embodiment is significantly different from the plating apparatus of the first to fifth embodiments in that it is configured to plate a rectangular (square) substrate. In the following description, detailed description of the same configuration as the plating apparatus of the first embodiment will be omitted.

The plating apparatus of the sixth embodiment includes a hoop 102, a fixing unit 120, and a substrate transfer apparatus 122. As will be described later, the fixing unit 120 according to the sixth embodiment has an organic substance desorption device that locally desorbs organic substances existing at the edge portion of the rectangular substrate before being set in the substrate holder 60. In the plating apparatus of the sixth embodiment, a substrate holder 60 capable of holding a rectangular substrate is used. The fixing unit 120 is an organic matter desorption device, and is configured to locally desorb the organic matter existing at the edge portion of the rectangular substrate and then hold the rectangular substrate in the substrate holder 60.

The plating apparatus further includes a stocker 124, a pre-wet tank 126, an activation tank 129, a blow tank 132, and a plating tank 10. In the activation tank 129, the surface of the substrate after pre-wetting is washed with an acid or the like to activate it. The stocker 124, the pre-wet tank 126, the activation tank 129, the blow tank 132, and the plating tank 10 are arranged in this order. Further, the plating apparatus includes a cleaning / drying apparatus 135 for cleaning and drying the plated rectangular substrate.

FIG. 21 is a flow chart showing a plating method according to a sixth embodiment. In this plating method, first, a resist pattern is formed on the rectangular substrate before the rectangular substrate is conveyed to the plating apparatus shown in FIG. 20 (step S2101). Subsequently, the rectangular substrate on which the resist pattern is formed is irradiated with UV, the resist residue on the surface of the rectangular substrate is removed (ashing treatment), and the resist surface is hydrophilized (discum treatment) (step S2102). The processing of step S2101 and step S2102 is performed in any device other than the plating device shown in FIG.

Subsequently, the rectangular substrate is conveyed from the hoop 102 accommodating the rectangular substrate to the fixing unit 120 by the substrate transfer device 122. In the fixing unit 120, the edge portion of the rectangular substrate is cleaned (step S2103). Specifically, in the fixing unit 120, UV or plasma is locally applied to the edge portion of the rectangular substrate by the organic matter desorbing device to desorb the organic matter.

Although not shown in the flow shown in FIG. 21, when a sensor (not shown) is provided in the fixing unit 120, UV or plasma is applied to the organic matter existing at the edge of the rectangular substrate to locally remove it. After that, it is possible to confirm the presence or absence of contaminants (including organic substances) at the edge portion. Specifically, first, a sensor (spectrophotometer or fluorescence reflection film thickness meter) is positioned above the surface of a rectangular substrate arranged in an organic matter desorption device provided in the fixing unit 120. While scanning the sensor from the center of the rectangular substrate to the edge (or from the edge to the center of the substrate), light in the ultraviolet region (200 nm to 380 nm), for example, light having a wavelength of 365 nm is emitted from the sensor toward the surface of the rectangular substrate. Irradiate as excitation light and measure absorbance or fluorescence intensity.

The surface of the rectangular substrate has an edge portion that has been subjected to UV or plasma treatment and a surface to be plated that has not been subjected to UV or plasma treatment, and the seed layer is the entire surface of the rectangular substrate surface (the surface to be plated and the edge). Part) is formed. Then, by scanning the sensor on the surface to be plated and the edge portion, the absorbance or fluorescence intensity of both the surface to be plated and the edge portion can be measured. A control unit (not shown) of the plating apparatus compares, for example, the absorbance of both the surface to be plated and the edge portion, and for example, the value of the ratio of the absorbance of the edge portion to the absorbance of the surface to be plated is a preset threshold value (for example, 50%). Whether or not the pollutants (including organic substances and oxide film) at the edge portion are sufficiently removed can be determined by whether or not it is larger than the following). When the value of the above ratio is larger than the threshold value, it can be determined that the contaminants (including organic substances and oxide film) at the edge portion are not sufficiently removed. Further, when the value of the above ratio is not larger than the threshold value, it can be determined that the contaminants (including organic substances and oxide film) at the edge portion are sufficiently removed. When measuring the fluorescence intensity, it is possible to determine whether or not the contaminants on the edge portion are sufficiently removed by similarly comparing the predetermined threshold value with the measured value.

If it is determined based on this determination that the contaminants on the edge portion are not sufficiently removed, the step of locally radiating UV or plasma to the edge portion of the rectangular substrate may be repeated. Further, when it is determined that the contaminants on the edge portion are sufficiently removed, it is assumed that the desorption of organic substances has been completed, and the contaminants are transported to each processing tank by the substrate holder transfer device 140, and a series of plating treatments are performed. Will be done. In this way, it is determined whether or not there is a contaminant on the edge of the rectangular substrate before the plating process, and then the rectangular substrate on which no contaminant remains on the edge is plated. Therefore, it is possible to more reliably prevent deterioration of the in-plane uniformity of the plating film thickness of the rectangular substrate due to the variation in the contact resistance of the electrical contacts of the substrate holder 60.

The rectangular substrate whose edge portion has been cleaned is set in the substrate holder 60 by the fixing unit 120 (step S2104). At this time, since the organic matter at the edge portion of the rectangular substrate is desorbed, the electrical contact of the substrate holder 60 comes into contact with the edge portion of the cleaned rectangular substrate. As a result, it is possible to reduce variations in the contact resistance of the electrical contacts of the substrate holder 60 due to the adhesion of organic substances.

The rectangular substrate held in the substrate holder 60 is first conveyed to the pre-wet tank 126 by the substrate holder transfer device 140, and the substrate W is immersed in the pure water contained in the pre-wet tank 126 (step S2105). Subsequently, the rectangular substrate is conveyed to the activation tank 129, and the surface of the substrate W is activated (step S2106).

The rectangular substrate is immersed in any of the plating cells 134 of the plating tank 10 to perform a plating process (step S2107). The rectangular substrate on which the plating film is formed is the blow tank 1
Blow-dry at 32 (step S2108). Subsequently, the rectangular substrate held by the substrate holder 60 is conveyed to the fixing unit 120, and the rectangular substrate is removed from the substrate holder 60. The substrate transfer device 122 receives the rectangular substrate from the fixing unit 120 and conveys the rectangular substrate to the cleaning / drying device 135. The surface of the rectangular substrate is washed and dried in the washing / drying device 135 (step S2109).

Next, the process in step S2103 shown in FIG. 21 will be described in detail. FIG. 22 is a schematic side view of an example of the organic matter desorption device 50 provided in the fixing unit 120. The organic matter desorption device 50 constitutes a UV irradiation device or a plasma radiation device. As shown in FIG. 22, the organic matter desorption device 50 includes a substrate support 55 (corresponding to an example of a rotation mechanism), a first actuator 53 (corresponding to an example of an actuator), and a second actuator 52 (corresponding to an example of an actuator). (Corresponding to one example), a head unit 51, and a control unit 54. The substrate support 55 is configured to attract the back surface of the rectangular substrate S1 and rotates the rectangular substrate S1 in the circumferential direction. The substrate support 55 attracts the rectangular substrate S1 by an electrostatic suction type or a vacuum suction type.

The head portion 51 is configured so that UV or plasma can be locally applied to the edge portion of the rectangular substrate S1 from above the rectangular substrate S1 arranged on the substrate support 55. That is, when the head portion 51 is configured to irradiate UV, the organic substance desorption device 50 constitutes a UV irradiation device, and when the head portion 51 is configured to radiate plasma, the organic substance desorption device 50 is configured. The device 50 constitutes a plasma irradiation device. The organic matter desorption device 50 can locally apply UV or plasma to the edge portion of the rectangular substrate S1 before being held by the substrate holder 60. In other words, the region other than the edge portion of the rectangular substrate S1 is not exposed to UV or plasma.

The first actuator 53 and the second actuator 52 can move the head portion 51 in the horizontal direction. Specifically, the first actuator 53 can move the head portion 51 in the first direction in the horizontal direction and the linear direction, and the second actuator 52 moves in the second direction orthogonal to the first direction. Can be made to. In the illustrated example, the first actuator 53 can move the head portion 51 along the edge portion of the rectangular substrate S1, and the second actuator 52 allows the second actuator 52 to move the UV or plasma application position from the end portion of the rectangular substrate S1. Distance d2 can be adjusted. In the present embodiment, the distance d2 is about 5 mm or less, more preferably about, so that UV or plasma is applied to the region on the outer peripheral side of the portion where the lip portion 70a of the seal member 70 of the substrate holder 60 abuts. The position of the head portion 51 is adjusted so that it is 2 mm or less. In the present embodiment, the first direction or the second direction does not mean one direction, but means both directions such as the plus direction and the minus direction of the X axis.

Further, the head portion 51 is configured to be movable in the vertical direction by an elevating mechanism (not shown). The distance d1 between the UV irradiation source or plasma emission port of the head portion 51 and the rectangular substrate S1 is preferably about 1 mm or more and about 10 mm or less. If this distance is less than 1 mm, the rectangular substrate S1 may come into physical contact with the UV irradiation source or the plasma emission port. Further, if this distance d1 is more than 10 mm, it may not be possible to locally irradiate UV or plasma. This distance d1 should be about 2 mm or more and about 5 mm or less so that the rectangular substrate and the UV irradiation source or the plasma emission port can be more reliably irradiated without being physically contacted and can be irradiated locally. Is more preferable.

The organic matter desorption device 50 further includes a head unit 51, a first actuator 53, a second actuator, and a control unit 54 for controlling an elevating mechanism (not shown). Further, in the organic matter desorption device 50, as shown in FIG. 22, UV or plasma emitted from the head portion 51 is located on the center side of the rectangular substrate S1 of the head portion 51 so as not to diffuse to the center side of the rectangular substrate S1.
Alternatively, it may have a mask 57 for shielding the plasma.

23A to 23E are plan views of the organic matter removing device 50 showing the process of removing the organic matter at the edge portion of the rectangular substrate S1 by the organic matter removing device 50 shown in FIG. 22. As shown in FIG. 23A, first, the organic matter desorption device 50 aligns the head portion 51 in the vertical direction by an elevating mechanism (not shown), and the position of the head portion 51 is positioned on the rectangular substrate S1 by the second actuator 52. Align to one of the four edges. Subsequently, the control unit 54 of the organic matter desorption device 50 controls the head unit 51 and the first actuator 53, and while radiating UV or plasma from the head unit 51, the first actuator 53 controls the edge portion of the rectangular substrate S1. The head portion 51 is moved along the above to clean one of the edge portions.

When one of the edge portions is cleaned, the organic matter desorption device 50 rotates the substrate support 55 (see FIG. 22) to rotate the rectangular substrate S1 by 90 degrees as shown in FIG. 23B. At this time, the control unit 54 controls the head unit 51 and the substrate support 55 so as to rotate the substrate support 55 after stopping the radiation of UV or plasma from the head 51. In other words, the head portion 51 and the substrate support 55 are controlled so that the radiation of UV or plasma from the head portion 51 and the rotation of the rectangular substrate S1 by the substrate support 55 are not performed at the same time. This makes it possible to prevent UV or plasma from being radiated to an unintended region on the rectangular substrate S1.

As shown in FIG. 23B, the organic matter desorption device 50 aligns the head portion 51 with the edge portion of the rectangular substrate S1 by the second actuator 52 while stopping the radiation of UV or plasma. In the present embodiment, since the second actuator 52 is provided, even when the rectangular substrate S1 has a long side and a short side as shown in FIGS. 23A to 23E, the head portion 51 is used as the edge portion of the rectangular substrate S1. It can be aligned.

Subsequently, the organic matter desorption device 50 moves the head portion 51 along the edge portion of the rectangular substrate S1 by the first actuator 53 while radiating UV or plasma from the head portion 51, and the other one of the edge portions. Wash one. Similarly, as shown in FIGS. 23C and 23D, the organic matter desorption device 50 rotates the rectangular substrate S1 by 90 degrees each time one of the edge portions is cleaned, and cleans each edge portion.

When the cleaning of the four edge portions of the rectangular substrate S1 is completed, the organic matter desorption device 50 further rotates the rectangular substrate S1 by 90 degrees and returns the rectangular substrate S1 to the same position (home position) as in FIG. 23A (home position). FIG. 23E). As described above, the edge portions of the four sides of the rectangular substrate S1 are cleaned. The organic matter desorption device 50 shown in FIGS. 22 to 23E has a set of the first actuator 53, the second actuator 52, and the head portion 51, but a plurality of sets of these may be provided. In that case, the time required for cleaning the edge portion can be reduced.

FIG. 24 is a schematic side view of another example of the organic matter desorption device 50 provided in the fixing unit 120. Unlike the organic substance desorption device 50 shown in FIG. 22, the organic substance desorption device 50 shown in FIG. 24 is configured so that the substrate support 55 does not rotate. Instead, the organic matter desorption device 50 shown in FIG. 24 has a swivel shaft 56 that swivels the head portion 51, the first actuator 53, and the second actuator 52. The swivel shaft 56 is positioned so that its central axis passes substantially the center of the rectangular substrate S1. The head portion 51, the first actuator 53, and the second actuator 52 rotate directly or indirectly so that the head portion 51 can be located above the edge portion of the rectangular substrate S1 as shown in FIG. 24. It is connected to the shaft 56. The control unit 54 controls the drive of the swivel shaft 56 in addition to the head unit 51, the first actuator 53, and the second actuator 52.

25A to 25E are plan views of the organic matter removing device 50 showing the process of removing the organic matter at the edge portion of the rectangular substrate S1 by the organic matter removing device 50 shown in FIG. 24. As shown in FIG. 25A, first, the organic matter desorption device 50 aligns the head portion 51 in the vertical direction by an elevating mechanism (not shown), and positions the head portion 51 by the swivel shaft 56 and the second actuator 52. It is aligned with one of the four edges of the rectangular substrate S1. Subsequently, the control unit 54 of the organic matter desorption device 50 controls the head unit 51 and the first actuator 53, and while radiating UV or plasma from the head unit 51, the first actuator 53 controls the edge portion of the rectangular substrate S1. The head portion 51 is moved along the above to clean one of the edge portions.

When one of the edge portions is cleaned, the organic matter desorption device 50 rotates the swivel shaft 56 to swivel the head portion 51 by 90 degrees as shown in FIG. 25B. At this time, the control unit 54 controls the head unit 51 and the swivel shaft 56 so as to stop the radiation of UV or plasma from the head unit 51 and then rotate the head unit 51. In other words, the head portion 51 and the swivel shaft 56 are controlled so that the radiation of UV or plasma from the head portion 51 and the swivel of the head portion 51 by the swivel shaft 56 are not performed at the same time. This makes it possible to prevent UV or plasma from being radiated to an unintended region on the rectangular substrate S1.

As shown in FIG. 25B, the organic matter desorption device 50 aligns the head portion 51 with the edge portion of the rectangular substrate S1 by the second actuator 52 while stopping the radiation of UV or plasma. Subsequently, the organic matter desorption device 50 moves the head portion 51 along the edge portion of the rectangular substrate S1 by the first actuator 53 while radiating UV or plasma from the head portion 51, and the other one of the edge portions. Wash one. Similarly, as shown in FIGS. 25C and 25D, each time the organic matter desorption device 50 cleans one of the edge portions, the head portion 51 is swiveled about 90 degrees around the swivel shaft 56, and each edge portion is swiveled. To wash.

When the cleaning of the four edge portions of the rectangular substrate S1 is completed, the organic matter desorption device 50 further turns the head portion 51 by 90 degrees and returns the head portion to the same position (home position) as in FIG. 25A (FIG. 25E). As described above, the edge portions of the four sides of the rectangular substrate S1 are cleaned. The organic matter desorption device 50 shown in FIGS. 24 to 25E has a set of a swivel shaft 56, a first actuator 53, a second actuator 52, and a head portion 51, but has a plurality of sets of these. May be good. In that case, the time required for cleaning the edge portion can be reduced.

FIG. 26 is a schematic side view of another example of the organic matter desorption device 50 provided in the fixing unit 120. Unlike the organic matter desorption device 50 shown in FIG. 22, the organic matter desorption device 50 shown in FIG. 26 is provided with two head portions. That is, the organic matter desorption device 50 has a first head portion 51a, a second head portion 51b, and two second actuators 52a and 52b corresponding to the first head portion 51a and the second head portion 51b. As shown in FIG. 26, the first head portion 51a and the second head portion 51b are provided at positions facing each other with the first actuator 53 interposed therebetween. Therefore, the first head portion 51a and the second head portion can reciprocate in the same direction by the second actuators 52a and 52b.

27A to 27C are plan views of the organic matter removing device 50 showing the process of removing the organic matter at the edge portion of the rectangular substrate S1 by the organic matter removing device 50 shown in FIG. 26. As shown in FIG. 27A, first, the organic matter desorption device 50 aligns the head portion 51 in the vertical direction by an elevating mechanism (not shown), and first, the first head portions 51a and the second by the second actuators 52a and 52b. The position of the head portion 51b is aligned with two of the four edge portions of the rectangular substrate S1 that face each other. Subsequently, the control unit 54 of the organic matter desorption device 50 controls the first head portion 51a, the second head portion 51b, and the first actuator 53, and UV or plasma from the first head portion 51a and the second head portion 51b. The first actuator 53 moves the first head portion 51a and the second head portion 51b along the edge portion of the rectangular substrate S1 to clean the two opposing edge portions.

When the two opposing edges are cleaned, the organic desorption device 50 rotates the substrate support 55 (see FIG. 26) to rotate the rectangular substrate S1 by 90 degrees as shown in FIG. 27B. At this time, the control unit 54 stops the radiation of UV or plasma from the first head unit 51a and the second head unit 51b, and then rotates the substrate support 55 with the first head unit 51a and the second head unit 51a. It controls the head portion 51b and the substrate support 55. This makes it possible to prevent UV or plasma from being radiated to an unintended region on the rectangular substrate S1.

As shown in FIG. 27B, in the organic matter desorption device 50, the first head portion 51a and the second head portion 51b are opposed to the rectangular substrate S1 by the second actuators 52a and 52b while the UV or plasma radiation is stopped. Align with the two edges. Subsequently, the organic matter desorption device 50 radiates UV or plasma from the first head portion 51a and the second head portion 51b, and the first actuator 53 radiates the first head portion 51a and the first head portion 51a along the edge portion of the rectangular substrate S1. The second head portion 51b is moved to clean the two opposing edge portions.

When the cleaning of the four edge portions of the rectangular substrate S1 is completed, the organic matter desorption device 50 further rotates the rectangular substrate S1 by 270 degrees and returns the rectangular substrate S1 to the same position (home position) as in FIG. 27A (home position). FIG. 27C). As described above, the edge portions of the four sides of the rectangular substrate S1 are cleaned. The organic matter desorption device 50 shown in FIGS. 26 and 27A-27C has a first head portion 51a and a second head portion 51b. Therefore, as compared with the organic matter desorption device 50 shown in FIGS. 22 and 23A-23E, the time for irradiating the rectangular substrate S1 with UV or plasma and the time for rotating the rectangular substrate S1 can be reduced. Further, the organic matter desorption device 50 shown in FIGS. 26 to 27C has a set of the first actuator 53, the second actuators 52a and 52b, the first head portion 51a, and the second head portion 51b. , These may have a plurality of sets. In that case, the time required for cleaning the edge portion can be reduced.

FIG. 28 is a schematic side view of another example of the organic matter desorption device 50 provided in the fixing unit 120. Unlike the organic matter desorption device 50 shown in FIG. 24, the organic matter desorption device 50 shown in FIG. 28 is provided with two head portions. That is, the organic matter desorption device 50 has a first head portion 51a, a second head portion 51b, and two second actuators 52a and 52b corresponding to the first head portion 51a and the second head portion 51b. As shown in FIG. 28, the first head portion 51a and the second head portion 51b are provided at positions facing each other with the first actuator 53 interposed therebetween. Therefore, the first head portion 51a and the second head portion 51b can reciprocate in the same direction by the second actuators 52a and 52b.

29A to 29C are plan views of the organic matter removing device 50 showing the process of removing the organic matter at the edge portion of the rectangular substrate S1 by the organic matter removing device 50 shown in FIG. 28. As shown in FIG. 29A, first, the organic matter desorption device 50 aligns the first head portion 51a and the second head portion 51b in the vertical direction by an elevating mechanism (not shown), and then the swivel shaft 56 and the second actuator 52a. , 52b aligns the positions of the first head portion 51a and the second head portion 51b with the two opposing edge portions of the rectangular substrate S1. Subsequently, the control unit 54 of the organic matter desorption device 50 controls the first head portion 51a, the second head portion 51b, and the first actuator 53, and UV or plasma from the first head portion 51a and the second head portion 51b. The first actuator 53 moves the first head portion 51a and the second head portion 51b along the edge portion of the rectangular substrate S1 to clean one of the edge portions.

When the two opposing edges are cleaned, the organic desorption device 50 rotates the swivel shaft 56 to swivel the first head portion 51a and the second head portion 51b by 90 degrees as shown in FIG. 29B. At this time, the control unit 54 stops the radiation of UV or plasma from the first head unit 51a and the second head unit 51b, and then turns the first head unit 51a and the second head unit 51b. It controls the head portion 51a, the second head portion 51b, and the swivel shaft 56. This makes it possible to prevent UV or plasma from being radiated to an unintended region on the rectangular substrate S1.

As shown in FIG. 29B, the organic matter desorption device 50 uses the second actuators 52a and 52b to make the first head portion 51a and the second head portion 51b the edges of the rectangular substrate S1 while the UV or plasma radiation is stopped. Align with the part. Subsequently, the organic matter desorption device 50 radiates UV or plasma from the first head portion 51a and the second head portion 51b, and the first actuator 53 radiates the first head portion 51a and the first head portion 51a along the edge portion of the rectangular substrate S1. The second head portion 51b is moved to clean the two opposing edge portions.

When the cleaning of the four edge portions of the rectangular substrate S1 is completed, the organic matter desorption device 50 further rotates the first head portion 51a and the second head portion 51b by 270 degrees, and the first head portion 51a and the second head The portion 51b is returned to the same position (home position) as in FIG. 29A (FIG. 29C). As described above, the edge portions of the four sides of the rectangular substrate S1 are cleaned. The organic matter desorption device 50 shown in FIGS. 28 and 29A-29C has a first head portion 51a and a second head portion 51b. Therefore, as compared with the organic matter desorption device 50 shown in FIGS. 24 and 25A-25E, the time for irradiating the rectangular substrate S1 with UV or plasma and the time for rotating the head portion can be reduced. Further, the organic matter desorption device 50 shown in FIGS. 28 to 29C has a set of a swivel shaft 56, a first actuator 53, second actuators 52a and 52b, a first head portion 51a, and a second head portion 51b. However, a plurality of sets of these may be provided. In that case, the time required for cleaning the edge portion can be reduced.

When the organic substance desorption device 50 of the sixth embodiment described above is a UV irradiation device, the UV light source can emit, for example, a high-pressure mercury lamp, a low-pressure mercury lamp, a black light, or light in the UV region. A laser light source or the like can be adopted. High-pressure mercury lamps, low-pressure mercury lamps, and black lights tend to emit light. Therefore, when adopting these light sources, install the light source near the substrate W or use an optical system only at the edge. It is preferable to irradiate with UV. When the organic matter desorption device 50 is a plasma radiating device, for example, an atmospheric remote plasma device or the like can be adopted.

In the sixth embodiment, the organic matter desorption device 50 has been described as being provided in the fixing unit 120, but the present invention is not limited to this, and the organic matter desorption device 50 may be provided in another unit, or may be provided in a plating device as a separate independent device. It may be provided. Further, although the organic matter desorption device 50 is intended to clean the edge portions of the four sides of the rectangular substrate, for example, only the edge portions of the two opposite sides may be cleaned. In that case, the number of rotations of the rectangular substrate S1 or the number of rotations of the head portion 51 can be reduced. Further, the mask 57 shown in FIG. 22 can also be used in the other organic substance desorption device 50 shown in FIGS. 24 to 29C.

Although the embodiments of the present invention have been described above, the above-described embodiments of the invention are for facilitating the understanding of the present invention and do not limit the present invention. The present invention can be modified and improved without departing from the spirit thereof, and it goes without saying that the present invention includes an equivalent thereof. In addition, any combination or omission of the claims and the components described in the specification is possible within the range in which at least a part of the above-mentioned problems can be solved or in the range in which at least a part of the effect is exhibited. is there. For example, the organic substance removing device 45, the oxide film removing device 24, and the sponge cleaning device 80 for cleaning the edge portion of the substrate W described with reference to FIGS. 1 to 19 can be arbitrarily combined.

10 Plating tank 20 Spin rinse dryer 24,94 Oxide film remover 25 Chemical solution nozzle 28 Chemical solution 40 Aligner 45 Organic substance desorption device 50 Organic substance desorption device 51 Head part 51a 1st head part 51b 2nd head part 52, 52a, 52b 2 Actuator 53 1st actuator 54 Control unit 55 Board support 56 Swing shaft 60 Board holder 80 Sponge cleaning device 84 Sponge cleaning unit

Claims (32)

It is a plating device that plating the substrate.
An edge cleaning device that locally removes at least one of an organic substance and an oxide film existing at the edge of the substrate, and an edge cleaning device.
A plating apparatus comprising a plating tank for accommodating a plating solution and applying a voltage between the substrate and the anode in a state where the substrate and the anode are immersed in the plating solution. In the plating apparatus according to claim 1,
The edge cleaning device is
Includes an organic matter desorption device that locally desorbs organic matter existing at the edge of the substrate.
The organic matter desorption device is a plating device including a UV irradiation device that irradiates the edge portion of the rotating substrate with UV or a plasma radiating device that radiates plasma to the edge portion of the rotating substrate. In the plating apparatus according to claim 2,
It has an aligner that rotates the substrate to align the orientation of the substrate.
The organic matter desorption device is a plating device provided in the aligner. In the plating apparatus according to claim 2,
The UV irradiation device or the plasma radiation device is a plating device arranged at a position where UV or plasma can be locally applied to an edge portion of the substrate from above the substrate. In the plating apparatus according to any one of claims 1 to 4.
The edge cleaning device includes an oxide film removing device that locally removes an oxide film existing at the edge of the substrate.
The oxide film removing device is a plating device including a chemical solution cleaning device provided with a chemical solution nozzle for supplying a chemical solution to an edge portion of the rotating substrate. In the plating apparatus according to claim 5,
The chemical solution is a plating apparatus containing 3 wt% or more and 15 wt% or less of dilute sulfuric acid or 2 wt% or more and 20 wt% or less of citric acid. In the plating apparatus according to claim 5 or 6.
It has a spin rinse dryer configured to rotate and dry the substrate.
The oxide film removing device is a plating device provided in the spin rinse dryer. In the plating apparatus according to claim 5,
The chemical solution cleaning device is a plating device arranged at a position where a chemical solution can be locally supplied to an edge portion of the substrate from above the substrate. In the plating apparatus according to any one of claims 1 to 8.
A plating apparatus having a sponge cleaning apparatus for removing particles existing at an edge portion of the substrate. In the plating apparatus according to any one of claims 1 to 9.
A sensor configured to irradiate the edge portion of a substrate from which at least one of an organic substance and an oxide film existing on the edge portion has been locally removed and measure the intensity or absorbance of the reflected light. Equipped with a plating device. It is a plating method that plating the substrate.
A removal step of locally removing at least one of an organic substance and an oxide film existing at the edge of the substrate, and
The process of holding the substrate in the substrate holder and
A plating method comprising a step of plating the substrate held by the substrate holder. In the plating method according to claim 11,
The process of forming a resist pattern on the substrate and
It has an ashing step of ashing the resist pattern.
The removal step is a plating method performed after the ashing step. In the plating method according to claim 11 or 12,
The removal step is a plating method including a step of locally radiating UV or plasma to the edge portion of the substrate. In the plating method according to any one of claims 11 to 13.
The removing step is a plating method including a step of locally supplying a chemical solution to an edge portion of the substrate. In the plating method according to claim 14,
The plating method, wherein the chemical solution contains dilute sulfuric acid of 3 wt% or more and 15 wt% or less or citric acid of 2 wt% or more and 20 wt% or less. In the plating method according to any one of claims 11 to 15.
A plating method comprising a step of bringing a sponge head into contact with an edge portion of the rotating substrate to remove particles. In the plating method according to any one of claims 11 to 16.
The removal step is a plating method including a step of locally removing an organic substance existing at an edge portion of the substrate and then locally removing the oxide film. In the plating method according to any one of claims 11 to 17,
The removing step is a plating method including a step of locally removing at least one of an organic substance and an oxide film existing within a range of 2 mm from the peripheral edge of the substrate toward the center of the substrate. In the plating method according to any one of claims 11 to 18.
The removal step locally removes at least one of an organic substance and an oxide film existing in the region up to the peripheral edge of the substrate, which is adjacent to the region sealed by the sealing member when the substrate is held by the substrate holder. A plating method that includes a step of removing. In the plating method according to any one of claims 11 to 19.
A plating method comprising a step of irradiating the edge portion of a substrate on which at least one of an organic substance or an oxide film existing on the edge portion is locally removed and measuring the intensity or absorbance of the reflected light. .. It is a plating device that plating the substrate.
A plating tank for applying a voltage to the substrate held in the substrate holder for plating.
A plating apparatus having an edge cleaning device for locally removing at least one of an organic substance, an oxide film, and particles existing at an edge of the substrate. It is a plating method that plating the substrate.
A removal step of locally removing at least one of an organic substance, an oxide film, and particles existing at the edge of the substrate before being held by the substrate holder.
The process of holding the substrate in the substrate holder and
A plating method comprising a step of plating the substrate held by the substrate holder. In the plating apparatus according to claim 1,
The edge cleaning device is
Includes an organic matter desorption device that locally desorbs organic matter existing at the edge of the substrate.
The organic matter desorption device is a plating device including a UV irradiation device that irradiates the edge portion of the substrate with UV or a plasma radiating device that radiates plasma to the edge portion of the substrate. The plating apparatus according to claim 23.
The edge cleaning device is
A head portion configured to locally apply UV or plasma to the edge portion of the substrate, and a head portion.
A plating apparatus having an actuator for moving the head portion in the horizontal direction. The plating apparatus according to claim 24.
The actuator is a plating apparatus having a first actuator that moves the head portion in a first direction and a second actuator that moves the head portion in a second direction orthogonal to the first direction. The plating apparatus according to claim 24 or 25.
The edge cleaning device has a control unit that controls the head unit and the actuator.
The actuator is configured to move the head portion along the edge portion of the substrate.
The control unit controls the head unit and the actuator so that the head unit emits UV or plasma and the actuator simultaneously moves the head unit along the edge portion of the substrate. .. The plating apparatus according to claim 26.
The edge cleaning device has a swivel mechanism for swiveling the head portion.
The control unit is a plating device that controls the head unit and the swivel mechanism so as to stop the radiation of UV or plasma by the head unit when the head unit is swiveled by the swivel mechanism. The plating apparatus according to claim 26.
The edge cleaning device includes a rotating mechanism for rotating the substrate, a head portion, the rotating mechanism, and a control unit for controlling the actuator.
The control unit is a plating device that controls the head unit and the rotation mechanism so as to stop the radiation of UV or plasma by the head unit when the substrate is rotated by the rotation mechanism. In the plating method according to claim 11,
The removal step is a plating method comprising a step of radiating UV or plasma while moving a head portion that radiates UV or plasma along an edge portion of the rectangular substrate. In the plating method according to claim 29,
The removal step is a plating method comprising a step of moving the head portion in a horizontal direction to align the head portion with an edge portion of the rectangular substrate. In the plating method according to claim 29 or 30,
The removing step is a plating method comprising a step of radiating UV or plasma to one of the edge portions of the rectangular substrate and then swirling the head portion while stopping the radiation of UV or plasma. In the plating method according to claim 29 or 30,
The removal step is a plating method comprising a step of radiating UV or plasma to one of the edges of the rectangular substrate and then rotating the rectangular substrate while stopping the emission of UV or plasma.

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