CN108699722A

CN108699722A - Plater and coating method

Info

Publication number: CN108699722A
Application number: CN201780014785.XA
Authority: CN
Inventors: 长井瑞树; 下山正; 岸贵士; 西浦文敏
Original assignee: Ebara Corp
Current assignee: Ebara Corp
Priority date: 2016-03-04
Filing date: 2017-03-02
Publication date: 2018-10-23
Anticipated expiration: 2037-03-02
Also published as: TW201800620A; JP2021063306A; US20210040641A1; CN108699722B; JP6833557B2; JP7029556B2; JP2017160535A; TWI735547B

Abstract

The uniformity of plating film thickness is caused to be deteriorated the invention reside in the oxidation film for preventing the edge part because being formed in substrate and/or the organic matter for the edge part for being attached to substrate.The present invention provides a kind of plater carrying out plating to substrate.The plater has:Plating slot, to applying voltage set on the substrate of substrate holder to carry out plating;And edge part cleaning device, locally removal be set to the substrate holder before be present in the substrate edge part organic matter and oxidation film at least one.

Description

Plater and coating method

Technical field

The present invention relates to plater and coating methods.

Background technology

In the past, it was formed and was matched in the fine wiring groove, hole or photoresist opening portion set on surfaces such as semiconductor wafers Line, or the convex block (overshooting shape electrode) being electrically connected with the electrode etc. encapsulated is formed in the surface of semiconductor wafer etc..As formation The method of the wiring and convex block, for example, electrolytic plating method, vapour deposition method, print process, soldered ball convex block method etc. are known, but with The I/O numbers for semiconductor chip increase, spacing refinement, gradually a large amount of using can miniaturization and the more stable electrolytic coating of performance Method.

Plating is carried out to substrate with electrolytic plating method, is the shape on the substrates such as the semiconductor wafer for being formed with seed layer in advance At photoresist pattern.Then, for being formed with the substrate irradiating ultraviolet light (hereinafter referred to as UV or Ultra Violet) of photoresist pattern Deng to remove the photoresist residue on substrate surface (ashing processing), and carrying out the hydrophilicity-imparting treatment (place of removing slag of photoresistive surface Reason).

Ashed processing and the substrate for removing Slag treatment, are transported to plater, and be held in substrate holder.Substrate is protected Frame is held with the electric contact for powering to substrate.The electric contact of substrate holder is configured to be held in substrate holder in substrate When contacted with the seed layer on the edge part of the substrate of uncoated photoresist.Such substrate holder is for example disclosed in patent document In 1.By the way that the substrate for being held in substrate holder to be impregnated in plating liquid, and apply electricity between anode and substrate Pressure can form plating film in substrate surface.

Existing technical literature

Patent document

Patent document 1:Japanese Unexamined Patent Publication 2002-363794 bulletins

The subject that the invention solves

In previous coating method, after carrying out ashing processing and removing Slag treatment, and indirect carry out plating. That is, being to pass through the defined time after carrying out ashing processing and removing Slag treatment, substrate is just held in substrate holder.This When, because in ashing processing and going after Slag treatment through after a period of time, therefore has and formed on the seed layer in substrate edges portion Oxidation film or be attached with from the organic matter that photoresist volatilizees the case where.If in the substrate edges portion contacted with electric contact as substrate On seed layer form oxidation film or attachment organic matter, then the contact resistance of the electric contact of substrate holder generates uneven, and The problem of uniformity with plating film thickness is deteriorated.

Invention content

The present invention is to complete in view of the above problems, and the first purpose is that the uniformity of plating film thickness is prevented to be deteriorated, should The reason of uniformity of plating film thickness is deteriorated is the oxidation film for being formed in the edge part of substrate and the edge part for being attached to substrate Organic matter at least either.

The means to solve the problem

A mode according to the present invention provides a kind of plater carrying out plating to substrate.The plater includes:Side Edge cleaning device, the local organic matter for removing the edge part for being present in the substrate of the edge part cleaning device and oxidation film At least one;And plating slot, the plating slot store plating liquid, and for making substrate with anode pickling in the state of the plating liquid Under, apply voltage between the substrate and the anode, to carry out plating.

, can be before substrate be set to substrate holder according to this mode, locally there are the edge parts of substrate for removal At least one of organic matter and oxidation film.Therefore, the photoresist pattern for being formed in the surface other than the edge part of substrate will not be made At undesirable influence, and inhibit at least one of the organic matter for being present in the edge part of substrate and oxidation film that substrate is caused to keep The contact resistance of the electric contact of frame is uneven, and the uniformity of plating film thickness can be prevented to be deteriorated.

In the mode of the present invention, the edge part cleaning device includes organic matter release unit, which is detached from dress The organic matter for setting the edge part for making to be present in the substrate is locally detached from, and the organic matter release unit includes UV irradiation units Or plasma radiological unit, the UV irradiation units irradiate UV, the plasma radiological unit to the edge part of the substrate of rotation Plasma is radiated to the edge part of the substrate of rotation.

In general, being coated with photoresist on the substrate of plating, if radiating UV or plasma to the photoresist, photoresist may be caused to become Matter and be damaged.According to this mode, can UV or plasma locally be radiated to the edge part of substrate.It as a result, will not be to base Surface other than the edge part of plate, the part radiation UV or plasma that photoresist is coated on substrate, therefore can be not on substrate In the case that photoresist causes damage, the organic matter of the edge part of substrate is made to be detached from.

In the mode of the present invention, plater includes aligner, which makes the substrate rotation with proper alignment The direction of the substrate, the organic matter release unit are set to the aligner.

According to this mode, because organic matter release unit is set to aligner, therefore so that substrate is rotated by aligner, can lead to It crosses UV irradiation units or plasma irradiation unit handles the edge part of substrate.Therefore, it is not necessarily in organic matter release unit The mechanism for making substrate rotate is set, therefore cost can be reduced.In addition, by the way that organic matter release unit is set to aligner, can reduce The floor space of plater entirety.

In the mode of the present invention, the UV irradiation units or the plasma radiological unit are configured at can be from the base The top of plate is to the edge part local application UV of the substrate or the position of plasma.

In the mode of the present invention, the edge part cleaning device includes oxidation film removal device, oxidation film removal dress The oxidation film that part removal is present in the edge part of the substrate is set, the oxidation film removal device includes liquid cleaning device, The liquid cleaning device has the liquid nozzle that liquid is supplied to the edge part of the substrate of rotation.

In general, it is formed with seed layer on the substrate of plating, if being placed in the state of adhering liquid medicine on the seed layer, Worry then with seed layer dissolving.Therefore, the part other than the edge of the substrate of plating, i.e. from the opening of photoresist pattern expose Seed layer be attached with liquid in the case of, in order to avoid liquor residue, and must fully clean.It, can according to this mode Liquid is locally supplied to the edge part of substrate.Liquid will not be attached to the seed layer exposed from the opening of photoresist pattern as a result, And it can remove the oxidation film for the edge part for being formed in substrate.Therefore, it is attached to the situation in substrate entire surface compared to liquid, it can Substantially shorten the scavenging period of substrate.

In the mode of the present invention, the liquid includes 3wt% or more and 15wt% dilute sulfuric acids below or 2wt% or more And 20wt% citric acids below.

When removing the oxidation film of edge part of substrate by liquid, it is necessary to avoid the seed layer on the edge part of substrate molten Solution.According to this mode, oxide film dissolving can be removed in the case of the seed layer on the edge part of insoluble substrate.If also, dilute sulphur Acid is less than 3wt% or citric acid is less than 2wt%, then acid concentration is too low, and with the worry that can not suitably remove oxide film dissolving.Separately Outside, if dilute sulfuric acid is more than 15wt% or citric acid is more than 20wt%, acid concentration is excessively high, and the crystalline substance on the edge part with substrate The worry of kind layer dissolving.

In the mode of the present invention, plater includes spin rinse drying device, which is constituted To make the substrate rotate so that the drying substrates, the oxidation film removal device are set to the spin rinse drying device.

According to this mode, because oxidation film removal device is set to spin rinse drying device, therefore rotation can be passed through on one side Rinsing drying device makes substrate rotate, and is handled on one side the edge part of substrate with liquid cleaning device.In addition, spin rinse Drying device generally has and prevents the cover that the liquid on substrate disperses, therefore can prevent the liquid that liquid cleaning device supplied from flying It is dissipated to the outside of spin rinse drying device.Therefore, make the mechanism of substrate rotation without setting in oxidation film removal device and prevent The cover that only liquid disperses, therefore can reduce the cost.In addition, by the way that oxidation film removal device is set to spin rinse drying device, The floor space of plater entirety can be reduced.

In the mode of the present invention, the liquid cleaning device is configured at can be above the substrate to the side of the substrate Edge locally supplies the position of liquid.

In the mode of the present invention, plater includes sponge cleaning device, and sponge cleaning device removal is present in institute State the particle of the edge part of substrate.

According to this mode, can prevent from sandwiching between the seed layer on the electric contact of substrate holder and the edge part of substrate Particle, and then can inhibit the case where causing contact resistance to be deteriorated because of particle.

In the mode of the present invention, plater includes sensor, which is constituted as follows:For being present in The edge part irradiation light of the organic matter of the edge part and at least one substrate locally removed of oxidation film, and And measure the intensity or absorbance of the light of reflection.

According to this mode the organic matter for being present in edge part is can determine that by measuring the luminous intensity or absorbance of reflection And whether the polluter of the edge part of substrate that at least one of oxidation film is locally removed fully has removed.As a result, may be used Judge that the edge part of substrate whether there is polluter before plating, is directed to the base that polluter is not present in edge part later Plate carries out plating, therefore can prevent the contact resistance unevenness of electric contact possessed by substrate holder from leading to substrate W more really Planar uniformity variation of plating film thickness etc..

A mode according to the present invention, it is possible to provide the coating method of plating is carried out to substrate.The coating method includes as follows Process:Removing step, the removing step locally remove the edge part for being present in the substrate organic matter and oxidation film extremely Few one;Keep process, the holding process that the substrate is held in substrate holder;And plating process, at the plating The substrate that science and engineering ordered pair is held in the substrate holder carries out plating.

, can be before substrate holder according to this mode, locally removal is present in having for the edge part of substrate At least one of machine object and oxidation film.Therefore, the photoresist pattern for being formed in the surface other than the edge part of substrate will not be caused Harmful effect, and can inhibit the edge part for being present in substrate organic matter and oxidation film at least one caused by substrate keep The contact resistance of the electric contact of frame is uneven, and then the uniformity of plating film thickness can be prevented to be deteriorated.

In the mode of the present invention, coating method includes following process:Photoresist pattern formation process, the photoresist pattern are formed Process forms photoresist pattern in the substrate;And the photoresist pattern is ashed by ashing process, the ashing process;The removal work Sequence carries out after the ashing process.

According to this mode, because being removed process after being ashed process, therefore even if pass through after being ashed process Stipulated time and lead to that organic matter adheres to and at least one of oxidation film is formed in the edge part of substrate, also can be via removing step Locally removal be present in substrate edge part organic matter and oxidation film at least one.

The present invention a mode in, the removing step include to the edge part of the substrate locally radiate UV or wait from The process of son.

In general, being coated with photoresist on the substrate of plating, if radiating UV or plasma to the photoresist, photoresist may be caused Go bad, be damaged.According to this mode UV or plasma can be locally radiated to the edge part of substrate.It as a result, will not be to base Surface other than the edge part of plate, the part radiation UV or plasma that photoresist is coated on substrate, therefore can be not to substrate On photoresist cause damage in the case of, so that the organic matter of the edge part of substrate is detached from.

In the mode of the present invention, the removing step includes that the work of liquid is locally supplied to the edge part of the substrate Sequence.

In general, it is formed with seed layer on the substrate of plating, if being placed in the state of the seed layer adhering liquid medicine, Worry with seed layer dissolving.Therefore, the part other than the substrate edges of plating, the crystalline substance exposed from the opening of photoresist pattern It the case where kind layer adhering liquid medicine, in order to avoid liquor residue, and must fully clean.It, can be to the side of substrate according to this mode Edge locally supplies liquid.It as a result, can be the case where so that liquid is attached to from the seed layer that the opening of photoresist pattern is exposed Under, removal is formed in the oxidation film of the edge part of substrate.Therefore, the case where entire surface of substrate is attached to compared to liquid, can Substantially shorten the scavenging period of substrate.

When removing the oxidation film of the edge part of substrate by liquid, it is necessary to the seed layer on the edge part of substrate be avoided to dissolve. According to this mode, oxide film dissolving can be removed in the case of the seed layer on the edge part of insoluble substrate.Also, if dilute sulfuric acid is small Being less than 2wt% in 3wt% or citric acid, then acid concentration is too low, and with the worry that can not suitably remove oxide film dissolving.If in addition, Dilute sulfuric acid is more than 15wt% or citric acid is more than 20wt%, then acid concentration is too high, and the crystalline substance on the edge part with dissolving substrate The worry of kind layer.

In the mode of the present invention, coating method includes following process:Make the side of the substrate of spongy top contact rotation Edge, the process to remove particle.

According to this mode, can prevent from sandwiching between the seed layer on the electric contact of substrate holder and the edge part of substrate Particle, and then can inhibit because particle leads to the situation that contact resistance is deteriorated.

In the mode of the present invention, the removing step includes following process:In the edge part for making to be present in the substrate Organic matter be locally detached from after, the process that locally removes the oxidation film.

In the edge part of substrate, organic matter is attached on oxidation film.Therefore, oxide film dissolving is removed before so that organic matter is detached from In the case of, it is difficult to the oxidation film of organics removal attachment portion.According to this mode, because being gone after so that organic matter is detached from Oxide film dissolving, therefore organic matter and oxidation film can be effectively removed.

In the mode of the present invention, the removing step includes following process:Locally removal is present in from the substrate Peripheral part to organic matter and oxidation film in the range of substrate center 2mm the process of at least one.

In general, the electric contact of substrate holder connects with the edge part in the range of the peripheral part from substrate inside 2mm It touches.Therefore, according to this mode, it can locally remove to be present on substrate and contact this portion with the electric contact of substrate holder At least one of the organic matter and oxidation film divided.

In the mode of the present invention, the removing step includes following process:It locally removes in the substrate by substrate Retainer is present in the organic matter with the area adjacency and the region until substrate outer edge that are sealed by containment member when keeping And the process of at least one of oxidation film.

In the mode of the present invention, coating method includes following process:To being present in the organic matter and oxygen of the edge part Change the edge part irradiation light of at least one substrate after locally being removed of film, and measure the light of reflection intensity or The process of absorbance.

According to this mode, the intensity or absorbance of the light by measuring reflection can determine that the organic matter there are edge part And whether the polluter of the edge part of substrate that at least one of oxidation film is partially removed fully has removed.It as a result, can be Before plating judge substrate edge part whether there is polluter, later to the substrate of the non-residual contamination substance in edge part into Row plating, therefore the plating that can prevent the contact resistance unevenness of electric contact possessed by substrate holder from causing substrate W more really Planar uniformity variation of overlay film thickness etc..

A mode according to the present invention, it is possible to provide the plater of plating is carried out to substrate.The plater includes:Plating Slot, the substrate which is used to keep substrate holder applies voltage, to carry out plating;And edge part cleaning dress It sets, which locally removes the organic matter, oxidation film and particle of the edge part for being present in the substrate extremely Few one.

It, can be before being set to substrate holder according to this mode, locally removal is present in the edge part of substrate At least one of organic matter, oxidation film and particle.It therefore, can be in the photoresist on the surface other than the edge part not to being formed in substrate In the case that pattern causes harmful effect, inhibit to be present in the organic matter of edge part of substrate, oxidation film and particle at least one Person causes the contact resistance of the electric contact of substrate holder uneven, and then the uniformity of plating film thickness can be prevented to be deteriorated.

A mode according to the present invention, it is possible to provide the coating method of plating is carried out to substrate.The coating method includes as follows Process:Removing step, the removing step locally remove be present in before the substrate is held in substrate holder it is described At least one of the organic matter of the edge part of substrate, oxidation film and particle;Process, the holding process is kept to keep the substrate In substrate holder;And plating process, the plating process to be held in the substrate of the substrate holder into Row plating.

The plater of a mode according to the present invention, the edge part cleaning device include organic matter release unit, should Organic matter release unit makes the organic matter for being present in the edge part of the substrate locally be detached from, the organic matter release unit packet Irradiation unit containing UV or plasma radiological unit, the UV irradiation units irradiate UV to the edge part of the substrate, which puts Injection device radiates plasma to the edge part of the substrate.

In general, being coated with photoresist on the substrate of plating, if radiating UV or plasma to the photoresist, photoresist may be caused Go bad, be damaged.According to this mode, UV or plasma can be locally radiated to the edge part of substrate.It as a result, will not be to base Surface other than the edge part of plate, the part radiation UV or plasma that photoresist is coated on substrate, therefore can be not on substrate In the case that photoresist causes damage, the organic matter of the edge part of substrate is made to be detached from.

The plater of a mode according to the present invention, the edge part cleaning device have:Head, the head are configured to UV or plasma are locally applied to the edge part of the substrate;And actuator, the actuator make the head in the horizontal direction Upper movement.

According to this mode because head can move in the horizontal direction, even therefore the substrate of such as rectangle, can also make Head is moved along edge part, to carry out the cleaning of edge part.

The plater of a mode according to the present invention, the actuator have the first actuator and the second actuator, should First actuator makes the head move in a first direction, which makes the head hang down with the first direction Straight second party moves up.

According to this mode, head can be made to be moved up in a first direction with second party.Therefore, can not only make head along Edge part is moved, and can also be located the head on the direction vertical with the extending direction of edge part.Thus, for example substrate be with Head both sides can be positioned at the edge part of long side, the edge part of short side by the case where long side and the rectangular substrate of short side.

The plater of a mode according to the present invention, the edge part cleaning device, which has, controls the head and described The control unit of actuator, the actuator are configured to that the head is made to move along the edge part of the substrate, the control unit Control the head and the actuator so that be carried out at the same time the radiation of UV or plasma based on the head and be based on the cause It the head of dynamic device is moved along the edge part of the substrate.

According to this mode, head can be made to be moved along the edge part of rectangular substrate on one side, radiate UV or plasma on one side.

The plater of a mode according to the present invention, the edge part cleaning device have the rotation for making the end rotation Rotation mechanism;The control unit controls the head and the rotating mechanism so that makes the end rotation in the rotating mechanism When, so that the head is stopped radiation UV or plasma.

According to this mode, because head is rotatable, therefore edge part of the head easily on four sides of rectangular substrate can be made Upper movement.In addition, because during end rotation, head will not carry out the radiation of UV or plasma, therefore can prevent to rectangle base Unexpected regional radiation UV or plasma on plate.

The plater of a mode according to the present invention, the edge part cleaning device have rotating mechanism and control unit, The rotating mechanism makes the substrate rotate, which controls the head, the rotating mechanism and the actuator;The control Portion processed controls the head and the rotating mechanism so that when the rotating mechanism makes the substrate rotate, makes the head Stop radiation UV or plasma.

According to this mode, because substrate can be made to rotate, therefore the edge part on four sides of rectangular substrate can easily be made to move To the lower section on head.In addition, during substrate rotates, head will not carry out the radiation of UV or plasma, therefore can prevent to square Unexpected regional radiation UV or plasma on shape substrate.

The coating method of a mode according to the present invention, the removing step include following process:Make radiation UV or wait from The head of son is moved along the edge part of the substrate of rectangle on one side, the process for radiating UV or plasma on one side.

The coating method of a mode according to the present invention, the removing step include following process:Make the head in water It square moves up, so that the process of the edge part aligned in position of the substrate of the head and rectangle.

According to this mode, even for example, substrate has the case where rectangular substrate of long side and short side, it can also make head With the edge part of long side and edge part both sides' aligned in position of short side.

The coating method of a mode according to the present invention, the removing step include following process:To the base of rectangle After the edge part radiation UV or plasma of plate, stops radiation UV or plasma on one side, make the end rotation on one side Process.

According to this mode, because head is rotatable, therefore head can be made in the edge part on four sides of rectangular substrate easily Upper movement.In addition, because during end rotation, head will not carry out the radiation of UV or plasma, therefore can prevent to rectangle Unexpected regional radiation UV or plasma on substrate.

The coating method of a mode according to the present invention, the removing step include following process:To the base of rectangle After the edge part radiation UV or plasma of plate, stops radiation UV or plasma on one side, make the substrate of rectangle on one side The process of rotation.

According to this mode, because substrate can be made to rotate, therefore the edge part on four sides of rectangular substrate can easily be made to move To the lower section on head.In addition, because during substrate rotates, head will not radiate UV or plasma, therefore can prevent to rectangle Unexpected regional radiation UV or plasma on substrate.

Invention effect

According to the present invention, can prevent because being formed in the oxidation film of the edge part of substrate and being attached to the edge part of substrate At least either of organic matter and cause the uniformity of plating film thickness to be deteriorated.

Description of the drawings

Fig. 1 is the configured in one piece figure of the plater of first embodiment.

Fig. 2 is the stereogram of the substrate holder used in plater shown in FIG. 1.

Fig. 3 is the sectional view for the electric contact for indicating substrate holder shown in Fig. 2.

Fig. 4 is the outline top view of aligner shown in FIG. 1.

Fig. 5 is the summary section of the aligner in arrow 5~5 shown in Fig. 4.

Fig. 6 is the summary section of the aligner in arrow 6~6 shown in Fig. 4.

Fig. 7 is the flow chart for the coating method for indicating first embodiment.

Fig. 8 is the configured in one piece figure of another plater of first embodiment.

Fig. 9 is the configured in one piece figure of the plater of second embodiment.

Figure 10 is the skeleton diagram for the spin rinse drying device for indicating to have oxidation film removal device.

Figure 11 is the flow chart for the coating method for indicating second embodiment.

Figure 12 is the configured in one piece figure of the plater of third embodiment.

Figure 13 is the coating method flow chart for indicating third embodiment.

Figure 14 is the configured in one piece figure of the plater of the 4th embodiment.

Figure 15 is the summary side elevation of sponge cleaning device.

Figure 16 is the flow chart for the coating method for indicating the 4th embodiment.

Figure 17 is the configured in one piece figure of the plater of the 5th embodiment.

Figure 18 is the summary side elevation of sponge liquid cleaning device.

Figure 19 is the flow chart for the coating method for indicating the 5th embodiment.

Figure 20 is the configured in one piece figure of the plater of sixth embodiment.

Figure 21 is the flow chart for the coating method for indicating sixth embodiment.

Figure 22 is provided at the summary side elevation of an example of the organic matter release unit of fixed cell.

Figure 23 A are to indicate to make in organic matter release unit shown in Figure 22 the organic matter of the edge part of rectangular substrate to be detached from The vertical view of the organic matter release unit of process.

Figure 23 B are to indicate to make in organic matter release unit shown in Figure 22 the organic matter of the edge part of rectangular substrate to be detached from The vertical view of the organic matter release unit of process.

Figure 23 C are to indicate to make in organic matter release unit shown in Figure 22 the organic matter of the edge part of rectangular substrate to be detached from The vertical view of the organic matter release unit of process.

Figure 23 D are to indicate to make in organic matter release unit shown in Figure 22 the organic matter of the edge part of rectangular substrate to be detached from The vertical view of the organic matter release unit of process.

Figure 23 E are to indicate to make in organic matter release unit shown in Figure 22 the organic matter of the edge part of rectangular substrate to be detached from The vertical view of the organic matter release unit of process.

Figure 24 is provided at another summary side elevation of the organic matter release unit of fixed cell.

Figure 25 A are to indicate to make in organic matter release unit shown in Figure 24 the organic matter of the edge part of rectangular substrate to be detached from The vertical view of the organic matter release unit of process.

Figure 25 B are to indicate to make in organic matter release unit shown in Figure 24 the organic matter of the edge part of rectangular substrate to be detached from The vertical view of the organic matter release unit of process.

Figure 25 C are to indicate to make in organic matter release unit shown in Figure 24 the organic matter of the edge part of rectangular substrate to be detached from The vertical view of the organic matter release unit of process.

Figure 25 D are to indicate to make in organic matter release unit shown in Figure 24 the organic matter of the edge part of rectangular substrate to be detached from The vertical view of the organic matter release unit of process.

Figure 25 E are to indicate to make in organic matter release unit shown in Figure 24 the organic matter of the edge part of rectangular substrate to be detached from The vertical view of the organic matter release unit of process.

Figure 26 is provided at another summary side elevation of the organic matter release unit of fixed cell.

Figure 27 A are to indicate to make in organic matter release unit shown in Figure 26 the organic matter of the edge part of rectangular substrate to be detached from The vertical view of the organic matter release unit of process.

Figure 27 B are to indicate to make in organic matter release unit shown in Figure 26 the organic matter of the edge part of rectangular substrate to be detached from The vertical view of the organic matter release unit of process.

Figure 27 C are to indicate to make in organic matter release unit shown in Figure 26 the organic matter of the edge part of rectangular substrate to be detached from The vertical view of the organic matter release unit of process.

Figure 28 is provided at the summary side elevation of his an example of the organic matter release unit of fixed cell.

Figure 29 A are to indicate to make in organic matter release unit shown in Figure 28 the organic matter of the edge part of rectangular substrate to be detached from The vertical view of the organic matter release unit of process.

Figure 29 B are to indicate to make in organic matter release unit shown in Figure 28 the organic matter of the edge part of rectangular substrate to be detached from The vertical view of the organic matter release unit of process.

Figure 29 C are to indicate to make in organic matter release unit shown in Figure 28 the organic matter of the edge part of rectangular substrate to be detached from The vertical view of the organic matter release unit of process.

Specific implementation mode

Hereinafter, being described with reference to embodiments of the present invention.In attached drawing described below, for same or equivalent Inscape assigns identical symbol, and the repetitive description thereof will be omitted.

Fig. 1 is the configured in one piece figure of the plater of first embodiment.As shown in Figure 1, the plater substantially can area It is divided into:Substrate is loaded into substrate holder 60 or unloads carried base board from substrate holder 60 by loading/unloading section 170A;And processing Portion 170B, handles substrate.

It is equipped in loading/unloading section 170A:Aligner 40, by three chip cassette (Front~Opening Unified Pod:FOUP/ front-open wafer boxes) 102, the directional plane (orientation flat) of substrate and notch etc. Position is positioned at prescribed direction;And spin rinse drying device 20, make the substrate high speed rotation after plating so that it is dry It is dry.Chip cassette 102 stores to multistage multiple substrates of semiconductor wafer etc..It is equipped near spin rinse drying device 20 Fixed cell 120 loads substrate holder 60, and carries out the handling of substrate.Match in the center of these units 102,40,20,120 It is equipped with base-board conveying device 122, the transport mechanical device by transporting substrate between these units is constituted.As described later, The aligner 40 of one embodiment has organic matter release unit (with reference to Fig. 4 and Fig. 6 etc.), and part removal is protected set on substrate Hold the organic matter for being present in substrate edges portion before frame 60.

The composition of fixed cell 120 can load two substrate holders 60.In fixed cell 120, the substrate on one side is kept After the transmission for carrying out substrate between frame 60 and base-board conveying device 122, it can be transported with substrate in the substrate holder 60 of another side The transmission of substrate is carried out between device 122.

The processing unit 170B of plater has:Storage area 124, pre- wet sump 126, pre- immersion trough 128, the first rinse bath 130a, slot 132, the second rinse bath 130b and plating slot 10 are blown off.In storage area 124, carry out substrate holder 60 keeping and It is temporarily preset.In pre- wet sump 126, substrate is made to be impregnated in pure water.In pre- immersion trough 128, etching removal is formed in the crystalline substance of substrate surface Oxidation film on the conductive layer surface of kind layer etc..In first rinse bath 130a, with cleaning solution (pure water etc.) while after cleaning preimpregnation Substrate and substrate holder 60.It blows off in slot 132, the substrate after cleaning is drained.In second rinse bath 130b, with clear Washing lotion cleans the substrate after plating and substrate holder 60 simultaneously.Storage area 124, pre- wet sump 126, pre- immersion trough 128, first clean Slot 130a, it slot 132, the second rinse bath 130b and plating slot 10 is blown off is arranged in order according to this.

Plating slot 10 has the multiple plating units 134 for for example having overflow launder.Each plating unit 134 is in inside storage one A substrate, and substrate is made to be impregnated in the internal plating liquid kept.In plating unit 134, by between substrate and anode Apply voltage, the plating of copper plating etc. can be carried out to substrate surface.

Plater has substrate holder conveyer 140, is located at the side of these each machines, in these each machines Between together with substrate transport substrate holder 60, be to use such as tubular linear motor driven.The substrate holder conveyer 140 have the first conveyer 142 and the second conveyer 144.First conveyer 142 is configured in fixed cell 120, storage area 124, it pre- wet sump 126, pre- immersion trough 128, the first rinse bath 130a and blows off and transports substrate between slot 132.Second conveyer, 144 structure As in the first rinse bath 130a, the second rinse bath 130b, blow off and transport substrate between slot 132 and plating slot 10.Another implementation In mode, plater also can only have either one of the first conveyer 142 and the second conveyer 144, and the transmission of either one Device fixed cell 120, storage area 124, pre- wet sump 126, pre- immersion trough 128, the first rinse bath 130a, the second rinse bath 130b, It blows off and transports substrate between slot 132 and plating slot 10.

Fig. 2 is the stereogram of the substrate holder 60 used in plater shown in FIG. 1.Substrate holder 60, such as Shown in Fig. 2, such as with:First holding member 65 of the rectangular flat plate of ethlyene dichloride;And second holding member 66, warp By hinge 63, first holding member 65 is installed in a manner of free-open-close.First holding member 65 of substrate holder 60 Substantially central portion be equipped with retaining surface 68 for keeping substrate.In addition, the outside of the retaining surface 68 in the first holding member 65, The fixture 67 of inverted L font is equally spaced equipped with along the circumference of retaining surface 68, with inwardly projecting protruding portion.

The end of first holding member 65 of substrate holder 60 and the handle 69 of a pair of substantially T-shaped link, and are transporting It send or becomes supporting part when suspending substrate holder 60 in midair downwards.In storage area 124 shown in FIG. 1, the peripheral wall top of storage area 124 Face hangs with handle 69, thus can suspend substrate holder 60 in midair vertically downward.In addition, being passed by the first conveyer 142 or second The handle 69 for sending device 144 to hold the substrate holder supported in a suspended manner 60, can transport substrate holder 60.Also, Pre- wet sump 126, rinse bath 130a, 130b, is blown off in slot 132 and plating slot 10 pre- immersion trough 128, also via handle 69, at these Peripheral wall supporting substrates retainer 60 in a manner of suspending in midair downwards.

In addition, the external connector not indicated in figure is equipped in handle 69, for being connect with external power feeding section.This is outer Portion's contact is electrically connected with multiple electric conductors 73 set on 68 periphery of retaining surface (with reference to Fig. 3) via multiple wirings.

Second holding member 66 has:Base portion 61 is fixed on hinge 63;Cricoid sealing retainer 62, is fixed on Base portion 61.Pressure ring 64 is installed on the sealing retainer 62 of the second holding member 66 in a manner of rotating freely, and pressure ring 64 is used for will Sealing retainer 62 is attached to the first holding member 65 and is fixed with that will seal retainer 62.The peripheral part of pressure ring 64 has to evagination The multiple projecting strip part 64a gone out.The top surface of projecting strip part 64a and the bottom surface of the inward projection of fixture 67 have mutual along direction of rotation Contrary is to inclined taper surface.

When keeping substrate, first, in the state of opening the second holding member 66, substrate-placing is kept into structure in first The retaining surface 68 of part 65 is then switched off the second holding member 66.Then, pressure ring 64 is rotated clockwise, the projecting strip part of pressure ring 64 is made 64a slides into the inside (downside) of the inward projection of fixture 67.As a result, via the taper for being respectively arranged on pressure ring 64 and fixture 67 Face, the first holding member 65 is combined closely with the second holding member 66 and is lockked mutually, and can keep substrate.Releasing substrate When holding, in the state that the first holding member 65 and the second holding member 66 are lockable, pressure ring 64 is rotated counterclockwise.As a result, The projecting strip part 64a of pressure ring 64 is exited from the fixture 67 of inverted L font, to release the holding of substrate.

Fig. 3 is the sectional view for the electric contact for indicating substrate holder 60 shown in Fig. 2.As shown in figure 3, the first holding member It is placed with substrate W in 65 retaining surface 68.It (is one in figure to be configured between retaining surface 68 and the first holding member 65 multiple It is a) electric conductor 73, electric conductor 73 connect with the multiple wirings to extend out from the external connector set on handle 69 shown in Fig. 2. In electric conductor 73, when substrate W to be placed in the retaining surface 68 of the first holding member 65, the ends of multiple electric conductors 73 with The circle of substrate W is configured in such a way that flexible state is exposed to the surface of the first holding member 65 in the side of substrate W All outsides.

The face (in the figure face of lower section) opposite with the first holding member 65 in sealing retainer 62 is equipped with containment member 70, when substrate W is held in substrate holder 60, it is crimped on the periphery portion and the first holding member 65 of substrate W.Sealing Component 70 has:Flange part 70a, the surface of hermetic sealing substrate W;And flange part 70b, seal the table of the first holding member 65 Face.

Supporting mass 71 is installed in the sandwiched inside a pair of flanges portion 70a, 70b of containment member 70.In supporting mass 71 In, along the circumference of substrate W configured with multiple for example with the fixed electric contact 72 of screw, electric contact 72 is configured to can be from electric conductor 73 power supplies.Electric contact 72 has:Electric contact end 72a extends towards the inside of retaining surface 68;Foot 72b, consisting of can It powers from electric conductor 73.

If the first holding member 65 shown in Fig. 2 is lockable with the second holding member 66, as shown in figure 3, containment member 70 The short flange part 70a of inner peripheral surface side be pressed against the surface of substrate W, and the long flange part 70b of periphery surface side is then pressed against The surface of first holding member 65.As a result, can certainly will between flange part 70a and flange part 70b seal in the state of protect Hold substrate W.

A pair of flanges portion 70a, 70b in the region sealed by containment member 70, i.e. containment member 70 sandwiched area In domain, electric conductor 73 is electrically connected with the foot 72b of electric contact 72, and the crystal seed on the edge part of electric contact end 72a and substrate W Layer contact.As a result, can on one side with 70 hermetic sealing substrate W of containment member, on one side with substrate holder 60 keep in the state of, via Electric contact 72 powers to substrate W.

As described above, the substrate W for being formed with seed layer is pre-formed with photoresist pattern.Substrate W is being transported to shown in Fig. 1 Plater before, carried out the irradiation etc. of UV, and remove the photoresist residue on substrate surface (ashing processing), and Carry out the hydrophilicity-imparting treatment (removing Slag treatment) of photoresistive surface.It has carried out ashing processing and the substrate W of Slag treatment is gone then to be transported To plater, and it is held in substrate holder 60.Herein, because when after ashing handles and removes Slag treatment by one section Between, therefore have to form oxidation film on the seed layer on the edge part of the uncoated photoresists of substrate W or be attached with from photoresist and volatilize Organic matter the case where.Electric contact 72 shown in Fig. 3 with the edge part of substrate W because contact, if therefore on the edge part of substrate W Seed layer forms oxidation film or attachment organic matter, then the contact resistance of the electric contact 72 of substrate holder 60 generates uneven, and The problem of uniformity with plating film thickness is deteriorated.

Then, in present embodiment, organic matter release unit is set on aligner 40 shown in FIG. 1, makes to be formed in base Organic matter on seed layer on the edge part of plate W is detached from (removal).Also, in this specification, the edge part of substrate W refers to can be with The region that electric contact 72 contacts, or when keeping substrate W with substrate holder 60, compared to the portion contacted with containment member 70 Point, become the region of the peripheral part side of substrate W.For example, referring to compared to containment member 70 as shown in figure 3 in present embodiment The part that abuts flange part 70a become the region of peripheral side, from the outer peripheral edge portion of substrate W toward the range of substrate center about 5mm It is interior, in the range of more preferably about 2mm.

Fig. 4 is the approximate vertical view of aligner 40 shown in FIG. 1.Fig. 5 is the aligner 40 in arrow 5~5 shown in Fig. 4 Summary section, Fig. 6 is the summary section of the aligner 40 in arrow 6~6 shown in Fig. 4.As shown in Figs. 4-6, it is aligned There is device 40 pedestal 41, rotation microscope carrier 42, aligner light source 43, photodetector 44, organic matter release unit 45 (to be equivalent to edge An example of portion's cleaning device).

Rotation microscope carrier 42 is configured to the back sides sorbing substrate W, and substrate W is made to rotate in a circumferential direction.Also, rotation microscope carrier 42 is With electrostatic adsorption type or vacuum adsorption type sorbing substrate W.Aligner light source 43 is configured to for by rotating the rotation of microscope carrier 42 Irradiation light 46 near the edge part of substrate W.It is rotated by substrate W, is moved to by from aligner light source in the notch of substrate W When the position that 43 light 46 irradiates, light 46 reaches photodetector 44 by notch.Photodetector 44 is detecting light 46 When, the notch that aligner 40 can recognize substrate W is located at the underface of aligner light source 43, and can proper alignment substrate W direction.

Organic matter release unit 45 is UV irradiation units or plasma radiological unit.Present embodiment be configured to from Edge part local application UV or plasma of the top of substrate W to substrate W.Organic matter release unit 45 can be protected to being held in substrate Hold the edge part local application UV or plasma of the substrate W before frame 60.In other words, the region other than the edge part of substrate W is not It is exposed to UV or plasma.Substrate W is set to rotate by rotating microscope carrier 42, it thus can be efficiently to the entire edge part of substrate W Using UV or plasma.If the organic matter irradiation UV or plasma of the edge part to being attached to substrate W, organic matter are decomposed and are generated Volatile materials, and be then removed in a manner of volatilization as the organic matter of volatile materials.The UV irradiation sources of UV irradiation units Or the plasma of plasma radiological unit radiates mouth at a distance from substrate W, preferably about 1mm or more about 10mm or less.The distance If being less than 1mm, substrate may be contacted physically with the plasma of UV irradiation sources or plasma radiological unit radiation mouth.Separately Outside, if the distance is more than 10mm, possibly UV or plasma can not locally be irradiated.In order to more reliably avoid substrate from being shone with UV Penetrate the plasma radiation mouth physical contact of source or plasma radiological unit, and local irradiation can be carried out, be more preferably make this away from From for about 2mm or more about 5mm or less.

In the case of organic matter release unit 45 is UV irradiation units, as UV light sources, it can be used for example, high-pressure mercury Lamp, Cooper-Hewitt lamp, black light lamp or the laser light source etc. that UV zonal rays can be radiated.Because of high-pressure mercury-vapor lamp, low-pressure mercury Lamp and black light lamp have the tendency of light diverging, therefore the case where these light sources of use, preferably light source is set near substrate W, Or UV only is irradiated to edge part using optical system.The case where organic matter release unit 45 is plasma radiological unit can be used Such as air remote plasma device etc..

Aligner 40 can be also further equipped with such as lower sensor (spectrophotometer):In the edge part of substrate W, from edge part Top for substrate W edge part irradiation ultraviolet region (200nm~380nm) light, such as wavelength with 365nm Light observes the light reflected from edge part using as exciting light, thus measures absorbance;Or can also have irradiation fluorescence The light in region is to monitor the sensor (fluorescent reflection film thickness gauge) of the intensity of the reflected light.

The sensor (not shown) can also be set to organic matter release unit 45, also can in addition be set to aligner 40.This The control unit of the plater of embodiment constitutes as follows:Value by the absorbance or fluorescence intensity that are measured with the sensor is It is no to be more than preset threshold value, to judge whether the polluter of edge part is fully gone (comprising organic matter and oxidation film) It removes.For example, in the case that the polluter of judgement edge part is not removed fully, organic matter release unit 45, which also repeats, to be implemented To the edge part local radiation UV or plasma step of substrate W.In addition, what the polluter of judgement edge part had fully been removed In the case of, then the disengaging for being considered as organic matter terminates, and substrate W is transported to fixed cell 120 by base-board conveying device 122, then real Apply a series of plating.In this way, can judge that the edge part of substrate W whether there is polluter before plating, later Plating is carried out for the substrate of the not remaining polluter in edge part, thus substrate holder 60 can be prevented to be had more really Electric contact contact resistance unevenness cause substrate W plating film thickness planar uniformity be deteriorated etc..

Fig. 7 is the flow chart for the coating method for indicating first embodiment.In this coating method, first, transported by substrate W It send to before plater shown in FIG. 1, forms photoresist pattern (step S601) on substrate W.Then, to being formed with photoresist figure The substrate W of case carries out the irradiation of UV, removes the photoresist residue (ashing processing) in substrate W surface, and carry out photoresistive surface Hydrophilicity-imparting treatment (removing Slag treatment) (step S602).The processing plater shown in Fig. 1 of step S601 and step S602 with It is carried out in outer any device.

Then, by base-board conveying device 122, substrate W is transported from the chip cassette 102 of storage substrate W toward aligner 40.In aligner 40, the cleaning (step S603) of the edge part of substrate W is carried out.Specifically, in aligner 40, by organic Object release unit 45 makes organic matter be detached from the edge part local application UV or plasma of substrate W.Also, passing through aligner at this time 40 by the direction proper alignment of substrate W.

Though do not recorded in flow shown in Fig. 7, aligner 40 be equipped with sensor (not shown) the case where, by right At least one in the organic matter and oxidation film for being present in the edge parts substrate W removes it using UV or plasma to carry out part Afterwards, it can confirm whether edge part has polluter (comprising organic matter and oxidation film).Specifically, sensor is made (to divide first Light photometer or fluorescent reflection film thickness gauge) it is located at the surface for the substrate W for being configured at aligner 40.Make base with aligner 40 Plate W rotation or it is static in the state of, make sensor from portion of substrate center toward edge part (or from edge part toward substrate center on one side Portion) scanning, on one side from sensor towards the light of substrate W surface irradiation ultraviolet region (200nm~380nm), such as 365nm The light of wavelength is using as exciting light, to measure absorbance or fluorescence intensity.

In substrate surface, there are edge parts through UV or plasma treatment and plated without UV or plasma treatment Clad can, and seed layer is formed in the whole surface (plated clad can and edge part) of substrate.Then, by keeping sensor scanning plated Clad can and edge part can measure the absorbance or fluorescence intensity of plated clad can and edge part both sides.The control unit example of plater Such as, compare the absorbance of the plated clad can and edge part both sides, and the absorbance of judgement such as edge part is relative to being plated Whether the ratio of the absorbance in face is more than preset threshold value (such as 50% or less), can determine that the polluter of edge part Whether (including organic matter and oxidation film) has fully removed.Above-mentioned ratio is more than the case where threshold value, can determine that the pollution of edge part Substance (including organic matter and oxidation film) is not removed fully.In addition, in the case that above-mentioned ratio is not more than threshold value, can determine that The polluter (including organic matter and oxidation film) of edge part has fully been removed.The case where measuring fluorescence intensity, also can be identical Ground is by comparing defined threshold value and measured value, to judge whether the polluter of edge part is fully removed.

According to the judgement, the case where polluter of edge part is not removed fully is judged, also repeat and implement to substrate W Edge part local radiation UV or plasma the step of.In addition, the case where polluter of judgement edge part is fully removed, The disengaging for being then considered as organic matter terminates, and is carried it to fixed cell 120 by base-board conveying device 122, a series of to implement Plating.In this way, judging that the edge part of substrate W whether there is polluter before plating, it is directed to edge part later The substrate of not remaining polluter carries out plating, thus can prevent electric contact possessed by substrate holder 60 more really Contact resistance unevenness causes the planar uniformity of the plating film thickness of substrate W to be deteriorated etc..

The substrate W for having carried out edge part cleaning is transported to fixed cell 120 by base-board conveying device 122, and sets It is placed in substrate holder 60 (step S604).At this point, because the organic matter of the edge part of substrate W has been detached from, therefore substrate is kept The electric contact of frame 60 is contacted with the edge part of cleaned substrate W.The substrate caused by the attachment of organic matter can be reduced as a result, The contact resistance of the electric contact of retainer 60 is uneven.

The substrate W of substrate holder 60 is held in by substrate holder conveyer 140, is transported to pre- wet sump first 126, and substrate W is impregnated in the pure water (step S605) stored in pre- wet sump 126.Then, substrate W is transported to pre- immersion trough 128, and (step S606) is cleaned in the surface of substrate W by acid.Specifically, substrate W is impregnated in and is stored in pre- immersion trough 128 The liquid of sulfuric acid and nitric acid etc., etching removal are formed in the oxidation film of the seed layer surface on substrate surface.

Though flow shown in Fig. 7 is not recorded, the substrate W through acid cleaning is impregnated in institute in the first rinse bath 130a later The pure water of storage, so also liquid accompanying in substrate W surface capable of washing.Then, substrate W is impregnated in appointing for plating slot 10 One plating unit 134, to carry out plating (step S607).The substrate W that plating film is formed with to surface carries out QDR (Quick Damp Rinse/ quickly moisten flushing) processing (step S608).Specifically, substrate W is impregnated in the second rinse bath 130b The pure water stored, with plating liquid accompanying in cleaning base plate W surface.

Then, the substrate W retained in substrate holder 60 is transported to fixed cell 120, and substrate W is kept from substrate It is removed in frame 60.Base-board conveying device 122 receives substrate W from fixed cell 120, and substrate W is transported to spin rinse and is done Dry device 20.Substrate W carries out cleaning and the drying (step S609) on surface in spin rinse drying device 20.

As mentioned above, according to the present embodiment, can be before setting as substrate holder 60, part removal is present in The organic matter of the edge parts substrate W.Therefore, dysgenic feelings can not caused to the photoresist pattern being formed in substrate W surface Under condition, inhibit the contact resistance of the electric contact 72 of substrate holder 60 caused by being present in the organic matter of edge part of substrate W not , and then the uniformity of plating film thickness is prevented to be deteriorated.

In addition, according to the present embodiment, it can be to the edge part local radiation UV or plasma of substrate W.Accordingly, because will not UV or plasma radiated for the part of the surface other than the edge part of substrate W, i.e. uncoated photoresist on substrate W, therefore can be In the case of not causing damage to photoresist, the organic matter of the edge part of substrate W is made to be detached from.

In addition, according to the present embodiment, because organic matter release unit 45 is set to aligner 40, therefore alignment can be passed through on one side Device 40 makes substrate rotate, and is handled on one side the edge part of substrate W with UV irradiation units or plasma irradiation unit.Therefore, Because it is not necessary that the mechanism for making substrate rotate is arranged in organic matter release unit 45, therefore cost can be reduced.In addition, organic by making Object release unit 45 is set to aligner 40, can reduce the floor space of plater entirety.

Also, can also be provided separately organic matter release unit 45 and aligner 40, and machine object release unit 45 is set to plating Coating device.Fig. 8 is the configured in one piece figure of another plater of first embodiment.As shown in figure 8, organic matter is detached from dress Setting 45 is provided separately with aligner 40, and machine object release unit 45 is set in loading/unloading section 170A.In this case, aligner 40 have the structure that organics removal release unit 45 is constituted shown in the fig. 4 to fig. 6.On the other hand, organic matter release unit 45 must have mechanism identical with rotation microscope carrier 42 shown in the fig. 4 to fig. 6 for making substrate W rotate.According to figure 8 Plater because organic matter release unit 45 is provided separately with aligner 40, therefore can carry out multiple substrate W respectively organic The processing of object release unit 45 and the processing of aligner 40.Then, it because organic matter disengaging processing needs the time, therefore handles whole The handling capacity of body depends on the processing time that organic matter is detached from processing, under such circumstances, is filled compared to plating shown in FIG. 1 It sets, handling capacity can be promoted.Also, organic matter release unit 45, can also be set to spin rinse drying device 20.Even if in such feelings Under condition, also can the sensor (spectrophotometer) for being configured to measure absorbance be set in spin rinse drying device 20, or set The light of irradiation fluorescence area is set to monitor sensor (fluorescent reflection film thickness gauge) (not shown) of its intensity of reflected light.This In the case of, make sensor be located at edge part cleaning in or cleaning after substrate W edge part top.Then, substrate W is made to revolve Turn, from the sensor to the edge part irradiation light of substrate W, and the acceptance part of sensor receives to carry out the reflected light of self-reference substrate W, with Measure the fluorescence intensity or absorbance of the reflected light.It also can determine that the polluter (organic matter in the edge part of substrate W as a result, And at least one of oxidation film) whether be sufficiently removed.It can judge the edge of substrate W before carrying out plating as a result, Portion whether there is polluter, and the substrate that can be directed to the not remaining polluter in edge part later carries out plating, and can more really Prevent the contact resistance unevenness of electric contact possessed by substrate holder 60 from causing the planar uniformity of the plating film thickness of substrate W in fact Be deteriorated etc..Also, in the case of judging that the edge part of substrate W whether there is polluter in the cleaning of the edge part of substrate W, The terminal of cleaning can be determined according to the judgement result of the sensor.

Fig. 9 is the configured in one piece figure of the plater of second embodiment.In second embodiment, implement compared to first The composition of the plater shown in FIG. 1 of mode, spin rinse drying device 20 and aligner 40 is different.Others are constituted It is identical with first embodiment, therefore be directed to the identical composition of first embodiment and assign same symbol and omit the description.

In second embodiment, aligner 40 does not have the organic matter release unit 45 illustrated in first embodiment. In addition, spin rinse drying device 20 has oxidation film removal device, oxidation film removal device locally set on substrate protect by removal Hold the oxidation film for the edge part for being present in substrate before frame 60.

Figure 10 is the skeleton diagram for the spin rinse drying device 20 for indicating to have oxidation film removal device.As shown, rotation Turning flushing drying device 20, there is rotation microscope carrier 21, substrate fixture 22, DIW nozzles 23, oxidation film removal device 24 (to be equivalent to side An example of edge cleaning device).Substrate fixture 22 is configured to hold the peripheral part of substrate W.Rotation microscope carrier 21 is configured to make substrate Fixture 22 rotates, and is rotated by substrate fixture 22, the substrate W held can be made to rotate in a circumferential direction.DIW nozzles 23 are constituted To supply DIW (De~ionized Water/ deionized waters) for the substantially central portion of substrate W.Through supplying to substrate W's DIW is flowed because of the rotation of substrate W by centrifugal force, and then towards the peripheral part of substrate W.Spin rinse drying device 20 In, though not indicated in figure, the DIW of substrate W disperses to outside in order to prevent, has the cover around covering substrate W.

Oxidation film removal device 24 has:Liquid nozzle 25 is the chemicals feeder that liquid 28 is supplied to substrate, structure As supply liquid 28;Arm 26 is connect with liquid nozzle 25;And rotary shaft 27, it is configured to that arm 26 is made to rotate.Liquid nozzle 25 Top is preferably about 1mm or more about 10mm or less at a distance from substrate W.If the distance is less than 1mm, substrate and liquid nozzle 25 Physical contact may occur.If in addition, the distance is more than 10mm, possibly liquid can not be locally supplying.In order to more reliably Substrate and 25 physical contact of liquid nozzle are avoided, and in order to which liquid can be locally supplying, preferably makes the top of liquid nozzle 25 Be about 2mm or more about 5mm or less at a distance from substrate.

In order to which by the 24 part removal of oxidation film removal device, there are the oxidation films of the edge parts substrate W, first, oxidation film removal Device 24 makes the diameter of 26 counterpart substrate W of arm rotate, and make liquid nozzle 25 be located at substrate W edge part top.In liquid Nozzle 25 is located in the state of the top of the edge part of substrate W, can be from DIW nozzles 23 to the substantially central portion of the substrate W of rotation DIW is supplied, while liquid 28 is sprayed to the edge part of the substrate W of rotation.While the edge part of supply to substrate W, liquid 28 because the rotation of substrate W is flowed by centrifugal force towards the peripheral part of substrate W.Oxidation film removal device 24 can be right as a result, The edge part supply part liquid 28 of substrate W.In other words, the region other than the edge part of practical upper substrate W is not exposed to medicine Liquid 28.Rotation microscope carrier 21 makes substrate W rotate, and as a result, can efficiently supply liquid 28 to the entire circle of the edge part of substrate W Week.If supplying liquid 28 to being formed in the edge parts substrate W oxidation film, oxidation film is dissolved and be removed by liquid 28.It is providing After time supplies liquid 28, stop supply liquid 28, continues to supply DIW.Previously supply can be washed off as a result, to the edges substrate W The liquid 28 in portion.Herein, the edge part of substrate W refers to the above-mentioned region contacted with electric contact 72, or is held in base in substrate W When plate retainer 60, compared to the region for the peripheral part side that the part that substrate W is contacted with containment member 70 becomes substrate W.However, In supply liquid dotted to substrate, pre-suppose that the liquid of a part can disperse, therefore use is not easy to generate not photoresist pattern The medicine liquid ingredient of good influence, concentration can also be configured to be located at the edge parts substrate W by the dissolving of liquid 28, removal in addition Peripheral portion oxidation film.

As liquid 28, it can be used and be not easy to cause damage to the seed layer on substrate W such as dilute sulfuric acid, citric acid Acid.In present embodiment, liquid 28 is preferably 3wt% or more 15wt% dilute sulfuric acids below or 2wt% or more 20wt% or less Citric acid.If dilute sulfuric acid is less than 3wt% or if citric acid is less than 2wt%, acid concentration is too low, and having suitably to go The worry of oxide film dissolving.In addition, if dilute sulfuric acid is more than 15wt% or citric acid is more than 20wt%, acid concentration is excessively high, and has Dissolve the worry of the seed layer on the edge part of substrate.

Figure 11 is the flow chart for the coating method for indicating second embodiment.The coating method of second embodiment, in addition to Other than a part, most of point is consistent with coating method shown in Fig. 7.Therefore, part is omitted identical as the coating method of Fig. 7 Partial explanation.

Ashing processing is carried out in step S602 and removes the substrate W of Slag treatment, is transported to plating dress as shown in Figure 9 It sets.Then, by base-board conveying device 122, substrate W is transported to spin rinse drying from the chip cassette 102 of storage substrate W Device 20.In spin rinse drying device 20, the cleaning (step S701) of edge part is carried out to substrate W.Specifically, rotation punching It washes in drying device 20, by the removal of oxidation film removal device 24, there are the oxidation films of the edge parts substrate W.

Further, in present embodiment, in order to measure substrate edge part state, also can be in spin rinse drying device The sensor (spectrophotometer) of setting such as lower structure in 20:For the edge part of substrate W, irradiated from the top of edge part ultraviolet The light in region (200nm~380nm), such as 365nm using as exciting light, and then measure the absorbance of edge part;Or it sets It sets for irradiating the light of fluorescence area to monitor sensor (fluorescent reflection film thickness gauge) (the non-table in figure of its intensity of reflected light Show).In this case, positioned at the top of the edge part of substrate W after making sensor in the cleaning of edge part or cleaning.Then make base Plate W rotations, and from the sensor to the edge part irradiation light of substrate W, then received with the acceptance part of sensor and carry out self-reference substrate W Reflection light, to measure the fluorescence intensity or absorbance of the reflected light.It can determine that the oxidation in the edge part of substrate W as a result, Whether film has been sufficiently removed, and can also check the state of edge part.Thus it can judge substrate W's before carrying out plating Edge part whether there is polluter, and the substrate for being directed to the not remaining polluter in edge part later carries out plating, therefore can be more Prevent the contact resistance unevenness of electric contact possessed by substrate holder 60 from causing the uniform plane of the plating film thickness of substrate W really Property be deteriorated etc..

The substrate W for having carried out the cleaning (optionally being cleaned and examined Check) of edge part is transported by base-board conveying device 122 To fixed cell 120, and it is set to substrate holder 60 (step S604).At this point, because substrate W edge part oxidation film It is removed, therefore the electric contact of substrate holder 60 is contacted with the edge part of cleaned substrate W.It can reduce because of oxidation film as a result, The contact resistance of the electric contact of caused substrate holder 60 is uneven.Set on the substrate W of substrate holder 60, in subsequent step It is handled in rapid S605~step S609.

As mentioned above, according to second embodiment, before being set to substrate holder 60, presence can locally be removed Oxidation film in the edge part of substrate.Therefore, dysgenic feelings can not caused to the photoresist pattern for being formed in substrate W surface Under condition, there are the oxidation films of the edge parts substrate W to cause the contact resistance of the electric contact 72 of substrate holder 60 uneven for inhibition, in turn The uniformity of plating film thickness can be prevented to be deteriorated.

It, can one because oxidation film removal device 24 is set to spin rinse drying device 20 in addition, according to second embodiment While making substrate rotate by spin rinse drying device 20, the edge parts substrate W are handled with liquid 28 on one side.Therefore, no It needs the setting in oxidation film removal device 24 to make the mechanism that substrate rotates and the mechanism for preventing liquid 28 from dispersing, therefore can reduce into This.In addition, spin rinse drying device 20, which has, prevents the cover that the liquid on substrate W disperses, therefore liquid nozzle 25 can be prevented The liquid 28 supplied disperses to the outside of spin rinse drying device 20.Further, by setting oxidation film removal device 24 In spin rinse drying device 20, the floor space of plater entirety can be reduced.

It is formed with seed layer on the substrate W being plated, if being placed in the state that the seed layer is attached with liquid 28, Worry with seed layer dissolving.Therefore, the part other than the edge for the substrate W being plated, for example, from the opening of photoresist pattern The seed layer of exposing is attached with the case where liquid 28, in order not to residual liquor 28, it is necessary to fully cleaning.According to the second embodiment party Formula can be locally supplying liquid 28 to the edge part of substrate W.It as a result, can be not attached in the seed layer exposed from the opening of photoresist pattern In the case of liquid 28, removal is formed in the oxidation film of the edge part of substrate.Therefore, compared to the entire surface for making substrate W The case where adhering liquid medicine 28, can substantially shorten the scavenging period of substrate W.

Figure 12 is the configured in one piece figure of the plater of third embodiment.Under the plater of third embodiment has State composition:It is real that spin rinse drying device 20 in plater shown in Fig. 8 in first embodiment is substituted for second Apply the spin rinse drying device 20 shown in Fig. 10 of mode.Others constitute the plating shown in Fig. 8 with first embodiment Device is identical, therefore simultaneously the description thereof will be omitted for composition same as the first embodiment imparting same symbol.

Plater shown in Figure 12 has:Spin rinse drying device 20 has oxidation film removal shown in Fig. 10 Device 24;And organic matter release unit 45.Therefore, this plater can locally remove the organic matter for being present in the edge parts substrate W And both oxidation films.

Figure 13 is the flow chart for the coating method for indicating third embodiment.The coating method of third embodiment is will to scheme The method that step S701 shown in 11 is combined with coating method shown in Fig. 7.That is, as shown in figure 13, being carried out in step S602 Ashing handles and the substrate W of Slag treatment is gone to be transported to plater shown in Figure 11.Then, crystalline substances of the substrate W from storage substrate W Piece cassette 102 is transported to aligner 40 by base-board conveying device 122.In aligner 40, the cleaning of edge part is carried out to substrate W (step S603).Specifically, in aligner 40, make to be present in the organic of the edge parts substrate W by organic matter release unit 45 Object is detached from.Also, the direction of substrate W is via 40 proper alignment of aligner at this time.It is kept also, edge part herein refers to substrate W When substrate holder 60, relative to the part contacted with containment member 70 as the region of the peripheral part side of substrate W, for example, In the range of from the outer peripheral edge portion of substrate W towards substrate center about 5mm, in the range of more preferably about 2mm.

Further, in order to measure the state in substrate edges portion in present embodiment, can also be arranged in aligner 40 with The sensor (spectrophotometer) constituted such as under type:In the edge part of substrate W, ultraviolet region is irradiated from the top of edge part The light of (200nm~380nm), such as 365nm using as exciting light, and then measure the absorbance of edge part;Or setting is shone The light of fluorescence area is penetrated to monitor sensor (fluorescent reflection film thickness gauge) (not shown) of the intensity of the reflected light.Plating The control unit of device is constituted as follows:It is pre- whether the value of the absorbance or fluorescence intensity that are measured by the sensor is more than The threshold value first set, can determine that whether the polluter of edge part has fully been removed (comprising organic matter and oxidation film).This feelings Under condition, in the cleaning of edge part or after cleaning, sensor is made to be located above the edge part of substrate W.Then, substrate W is made to rotate, From the sensor to the edge part irradiation light of substrate W, and the reflected light for carrying out self-reference substrate W is received with the acceptance part of sensor Line, to measure the fluorescence intensity or absorbance of the reflected light.Thus it can determine that the polluter in the edge part of substrate W (includes Organic matter and oxidation film) whether it has been sufficiently removed, it also can determine that edge part whether there is polluter.Thus it can plated Before covering processing, the edge part of judgement substrate W whether there is polluter, be directed to the base of the not remaining polluter in edge part later Plate carries out plating, therefore can prevent the unevenness of the contact resistance of electric contact possessed by substrate holder 60 from causing substrate W's Planar uniformity variation of plating film thickness etc..Further, in the cleaning of the edge part of substrate W, to judge the edge of substrate W Portion whether there is the case where polluter, and the terminal of cleaning can be determined according to the judgement result of the sensor.Further, Can be according to the measurement result of sensor, determining whether there is script edge part has abnormal substrate W.

The substrate W that the organic matter of edge part has disengaged from then is transported to spin rinse drying dress by base-board conveying device 122 Set 20.In spin rinse drying device 20, the cleaning (step S701) of edge part is carried out to substrate W.Specifically, spin rinse In drying device 20, the oxidation film for being present in the edge parts substrate W is set to be detached from by oxidation film removal device 24.Also, side herein Edge refers to, when substrate is held in substrate holder, becomes the periphery of substrate W relative to the part contacted with containment member 70 The region of portion side, such as the case where chip that substrate W is 300mm, refer to from the outer peripheral edge portion of substrate W towards substrate center about In the range of 5mm, in the range of more preferably about 2mm;In addition to making the ingredient of liquid, a concentration of being not easy to cause not photoresist pattern Other than the ingredient of good influence, concentration, the oxidation film for being present in edge part periphery can be also removed together.

The cleaned substrate W in edge part is transported to fixed cell 120 by base-board conveying device 122, is arranged at substrate guarantor Hold frame 60 (step S604).At this point, the organic matter and oxidation film of the edge part of substrate W have been removed, the electricity of substrate holder 60 Contact is contacted with the edge part of cleaned substrate W.Thus organic matter can be reduced and oxidation film causes the electricity of substrate holder 60 The contact resistance of contact is uneven.The substrate W for being set to substrate holder 60 is carried out in step S605~step S609 of back segment Processing.

As mentioned above, according to third embodiment, before being set to substrate holder 60, it can locally remove and be present in The organic matter and oxidation film of the edge part of substrate.Therefore, bad shadow can not caused to the photoresist pattern for being formed in substrate W surface In the case of sound, the organic matter for being present in the edge parts substrate W and oxidation film is inhibited to cause the electric contact 72 of substrate holder 60 Contact resistance is uneven, and then the uniformity of plating film thickness is prevented to be deteriorated.

In the edge part of substrate W, organic matter is adhered on oxidation film.Therefore, deoxygenation is gone before so that organic matter is detached from In the case of changing film, it is difficult to the oxidation film of organics removal attachment portion.According to third embodiment, because being to make organic matter Oxide film dissolving is removed after disengaging, therefore can be effectively removed organic matter and oxidation film.However, in one embodiment, it can also liquid It cleans edge part (step S701) and carries out organic matter disengaging processing (step S603) later.

<4th Shi Shifangshi >

Figure 14 is the configured in one piece figure of the plater of the 4th embodiment.In the plater of 4th embodiment, With not having on sponge cleaning device 80 this aspect and on organic matter release unit 45 this aspect, Fig. 1 with first embodiment Plater it is different.Others composition is identical with first embodiment, therefore is directed to structure same as the first embodiment At, assign same symbol and the description thereof will be omitted.

In the aligner 40 of plater shown in Figure 14, does not have the organic matter illustrated in first embodiment and be detached from Device 45.Sponge cleaning device 80 is set in loading/unloading section 170A, and the grain for being present in the edge parts substrate W is removed for part Son.

Figure 15 is the summary side elevation of sponge cleaning device 80.As shown, sponge cleaning device 80 has:Rotate microscope carrier 81, DIW nozzles 83, sponge cleaning part 84 (an example for being equivalent to edge part cleaning device) and the cover 88.Microscope carrier 81 is rotated to constitute For the back side of sorbing substrate W, substrate W is made to rotate in a circumferential direction.Also, rotation microscope carrier 81 is with electrostatic adsorption type or vacuum suction Formula sorbing substrate W.DIW nozzles 83 are configured to supply DIW to the substantially central portion of substrate W.The DIW to substrate W is supplied because of substrate W Rotation and by centrifugal force, and then toward the flowing of the peripheral part of substrate W.The cover 88 covers around substrate W, can prevent substrate W DIW disperse to outside.

Sponge cleaning part 84 has:Spongy top 85, the physically edge part of cleaning base plate W;Arm 86 connects with spongy top 85 It connects;Rotary shaft 87 is configured to that arm 86 is made to rotate.Spongy top 85 is e.g. made of PVA (polyvinyl alcohol), is configured to It is rotated centered on vertical axis.In addition, rotary shaft 87 is constituted in a manner of it can freely stretch in the axial direction.

In order to be present in the particle of the edge parts substrate W, first, sponge cleaning device 80 by the 84 part removal of sponge cleaning part So that the diameter of 86 counterpart substrate W of arm is rotated, spongy top 85 is made to be located at the top of the edge part of substrate W.It is located at base in spongy top 85 In the state of above the edge part of plate W, rotary shaft 87 makes spongy top 85 be connected to the edge of substrate W toward shrinking axially below Portion.In the state that spongy top 85 is abutted with the edge part of the substrate W of rotation, sponge cleaning part 84 makes spongy top 85 rotate.This When, DIW is supplied to substrate W by DIW nozzles 83.Sponge cleaning device 80 can locally remove the grain of the edge part of substrate W as a result, Son.In addition, being equipped with sensor (not shown) in sponge cleaning device 80, it also can determine that edge part whether there is pollutant Matter.

Figure 16 is the flow chart for the coating method for indicating the 4th embodiment.The coating method of 4th embodiment has step Rapid S801, the step S603 in coating method shown in Fig. 7 to replace first embodiment.It is omitted with Fig. 7's with lower part The explanation of coating method same section.

In flow shown in Figure 16, carries out ashing processing in step S602 and remove the substrate W of Slag treatment, be transported to Figure 14 Shown in plater.Then, substrate W is transported to sponge from the chip cassette 102 of storage substrate W by base-board conveying device 122 Cleaning device 80.In sponge cleaning device 80, the cleaning (step S801) of edge part is carried out to substrate W.Specifically, sponge is clear In cleaning device 80, by the removal of sponge cleaning part 84, there are the particles of the edge parts substrate W.

In present embodiment, in order to measure substrate edge part state, can also be arranged in sponge cleaning device 80 with The sensor (spectrophotometer) constituted such as under type:In the edge part of substrate W, ultraviolet region is irradiated from the top of edge part The light of (200nm~380nm), such as 365nm is using as exciting light, and then measure the absorbance of edge part;Or setting is shone The light of fluorescence area is penetrated to monitor sensor (fluorescent reflection film thickness gauge) (not shown) of its intensity of reflected light.Plating fills The control unit set is constituted as follows:Whether can be more than by the value of absorbance or fluorescence intensity that the sensor is measured pre- The threshold value first set, judges whether the polluter of edge part has fully been removed (comprising organic matter and oxidation film).Sponge is clear The case where sensor is equipped in cleaning device 80, in the cleaning of edge part or after cleaning, makes sensor be located at the edge part of substrate W Top.Then, substrate W is made to rotate, whether there is or not particles in the edge part of judgement substrate W, also can determine that edge part with the presence or absence of dirt Contaminate substance.It can judge that the edge part of substrate W whether there is polluter before carrying out plating as a result, be directed to side later The substrate of the not remaining polluter in edge carries out plating, therefore can prevent the contact of electric contact possessed by substrate holder 60 The unevenness of resistance causes the planar uniformity of the plating film thickness of substrate W to be deteriorated etc..It further, be in the clear of the edge parts substrate W The case where whether edge part of middle judgement substrate W still has polluter is washed, can be determined according to the judgement result of the sensor clear The terminal washed.Further, also can be according to the measurement result of sensor, determining whether there is script edge part has abnormal substrate W。

The cleaned substrate W in edge part is transported to fixed cell 120 by base-board conveying device 122, and is set to substrate guarantor Hold frame 60 (step S604).At this point, the particle of the edge part of substrate W has been removed, the electric contact and warp of substrate holder 60 are clear The edge part of the substrate W washed contacts.Thus particle, which can be reduced, causes the contact resistance of the electric contact of substrate holder 60 uneven.If The substrate W for being placed in substrate holder 60 is handled in step S605~step S609 of back segment.

As mentioned above, can be before being set to substrate holder 60 according to the 4th embodiment, part removal is deposited Particle in the edge parts substrate W.It is therefore possible to prevent the electric contact of substrate holder 60 and the seed layer on the edge part of substrate W Between sandwich particle, and can inhibit particle and contact resistance caused to be deteriorated.

<5th Shi Shifangshi >

Figure 17 is the configured in one piece figure of the plater of the 5th embodiment.The plater of 5th embodiment has sea Continuous liquid cleaning device 90, this puts different with the plater of Fig. 1 of first embodiment.Other are constituted implements with first Mode is identical, therefore is directed to composition same as the first embodiment, assigns same symbol and the description thereof will be omitted.

Sponge liquid cleaning device 90 shown in Figure 17 is set in loading/unloading section 170A, and for part removal, there are bases The oxidation film and particle of the edge parts plate W.Though in addition, do not indicated in Figure 17, in sponge liquid cleaning device 90, also can positioned at Sensor (not shown) is nearby set above the edge part of substrate W, to judge that edge part whether there is polluter.This feelings It may also set up the sensor (spectrophotometer) constituted as follows in condition:To the edge part of substrate W, from the upper of edge part Side, the light of irradiation ultraviolet region (200nm~380nm), such as 365nm measure the suction of edge part using as exciting light Luminosity;Or the light of setting irradiation fluorescence area is to monitor sensor (fluorescent reflection the film thickness gauge) (figure of its intensity of reflected light In do not indicate).The control unit of plater is constituted as follows:It can be strong by absorbance or fluorescence that the sensor is measured Whether the value of degree is more than preset threshold value, whether to judge the polluter (comprising organic matter and oxidation film) of edge part Fully it is removed.

Figure 18 is the summary side elevation of sponge liquid cleaning device 90.As shown, sponge liquid cleaning device 90 has: Rotation microscope carrier 91, DIW nozzles 93, sponge cleaning part 84, oxidation film removal device 94 (are equivalent to the one of edge part cleaning device Example), the cover 98.Rotation microscope carrier 91 is configured to the back sides sorbing substrate W, and substrate W is made to rotate in a circumferential direction.Also, rotation carries Platform 91 is with electrostatic adsorption type or vacuum adsorption type sorbing substrate W.

Oxidation film removal device 94 has:Liquid nozzle 95 is the chemicals feeder for supplying liquid to substrate, constitutes To supply liquid;Arm 96 is connect with liquid nozzle 95;And rotary shaft 97, it is configured to that arm 96 is made to rotate.The top of liquid nozzle 95 At a distance from substrate W, preferably about 1mm or more about 10mm or less.If the distance is less than 1mm, substrate may be with liquid nozzle 95 physical contact.If in addition, the distance is more than 10mm, possibly liquid can not be locally supplying.In order to more reliably avoid base Plate and 95 physical contact of liquid nozzle, and in order to be locally supplying liquid, the top of liquid nozzle 95 is at a distance from substrate More preferably about 2mm or more about 5mm or less.

In order to be present in the oxidation film of the edge parts substrate W, first, oxidation film by the 90 part removal of sponge liquid cleaning device Removal device 94 makes the diameter of 96 counterpart substrate W of arm rotate, so that liquid nozzle 95 is located at the top of the edge part of substrate W.Medicine It, can be from DIW nozzles 93 to the substantially central portion of the substrate W of rotation in the state that nozzle for liquid 95 is located above the edge part of substrate W DIW is supplied, and liquid is sprayed to the edge part of the substrate W of rotation.While liquid is supplied to the substrate edge parts W, because of base The rotation of plate W and by centrifugal force, and toward the flowing of the peripheral part of substrate W.Oxidation film removal device 94 can be to substrate W's as a result, Edge part is locally supplying liquid.In other words, the region other than the edge part of practical upper substrate W is not exposed to liquid.Pass through rotation Reprinting platform 91 makes substrate W rotate, and efficiently can supply liquid to the entire edge part of substrate W.If to being formed in the edges substrate W The oxidation film in portion supplies liquid, then oxidation film is removed because liquid dissolves.After supplying liquid with the stipulated time, stop supply Liquid continues to supply DIW.Thus capable of washing to supply to the liquid of the edge part of substrate W.Herein, before the edge part of substrate W refers to The region contacted with electric contact 72 is stated or when substrate W is held in substrate holder 60, relative to substrate W and containment member 70 Contact portion becomes the region of the peripheral part side of substrate W.However, in supply liquid dotted to substrate, part medicine is pre-supposed that Liquid can disperse, and other than using and being not easy to cause dysgenic medicine liquid ingredient, concentration to photoresist pattern, also may be configured as passing through Liquid 28 dissolves and removes the oxidation film of the peripheral portion positioned at the edge parts substrate W.

In addition, sponge liquid cleaning device 90 can pass through the edge part of the removal substrate of oxidation film removal device 94 W on one side Oxidation film, by the 84 part removal of sponge cleaning part, there are the particles of the edge parts substrate W on one side.Also, in present embodiment, in order to The edge part for measuring substrate whether there is polluter, can also be arranged in sponge liquid cleaning device 90 and constitute as follows Sensor (spectrophotometer):In the edge part of substrate W, from the top of edge part irradiation ultraviolet region (200nm~380nm) Light, such as 365nm is using as exciting light, to measure the absorbance of edge part;Or the light of setting irradiation fluorescence area To monitor sensor (fluorescent reflection film thickness gauge) (not shown) of its intensity of reflected light.The control unit of plater is with as follows Mode is constituted:Whether can be more than preset threshold value by the value of absorbance or fluorescence intensity that the sensor is measured, sentence Whether the polluter (including organic matter and oxidation film) of deckle edge has fully been removed.In this situation, in the clear of edge part After washing or cleaning, sensor is made to be located at the top of the edge parts substrate W, in this case rotates substrate W, can determine that edge part With the presence or absence of polluter.It can judge that the edge part of substrate W whether there is polluter before carrying out plating as a result, The substrate for being directed to the not remaining polluter in edge part later carries out plating, therefore can prevent electric possessed by substrate holder 60 The contact resistance unevenness of contact causes the planar uniformity of the plating film thickness of substrate W to be deteriorated etc..It further, be substrate W's The case where whether edge part of substrate W still has polluter is judged in the cleaning of edge part, it can be according to the judgement of the sensor As a result come determine cleaning terminal.Further, also script edge part can be determined whether there is according to the measurement result of sensor With abnormal substrate W.

Figure 19 is the flow chart for the coating method for indicating the 5th embodiment.The coating method of 5th embodiment is Also there is step S901 on the basis of the coating method shown in Fig. 7 of one embodiment.The plating side with Fig. 7 is omitted with lower part The explanation of method same section.

In step S603, organic matter release unit 45 possessed by aligner 40 makes to be present in substrate (with reference to fig. 4 to fig. 6) The organic matter of the edge parts W is detached from.Then, substrate W is transported to sponge liquid cleaning device 90 by base-board conveying device 122.Sponge In liquid cleaning device 90, the cleaning (step S901) of edge part is carried out to substrate W.Specifically, sponge liquid cleaning device In 90, removal is present in the particle and oxidation film of the edge parts substrate W.Though in addition, not indicated in Figure 19, in order to judge that edge part passes through Whether there is or not organic matter, oxidation film, particles etc. for the edge part of the substrate W of cleaning, therefore also can determine that edge part whether there is polluter.

The cleaned substrate W in edge part is transported to fixed cell 120 by base-board conveying device 122, and is arranged at substrate Retainer 60 (step S604).At this point, the electric contact of substrate holder 60 is contacted with the edge part of cleaned substrate W.Thus Particle, which can be reduced, causes the contact resistance of the electric contact of substrate holder 60 uneven.The substrate W for being set to substrate holder 60 exists It is handled in step S605~step S609 of back segment.

As mentioned above, can be before being set to substrate holder 60 according to the 5th embodiment, part removal exists Organic matter, oxidation film and particle in the edge parts substrate W.Therefore, the organic matter for being present in the edge parts substrate W, oxidation be can inhibit Film and particle cause the contact resistance of the electric contact 72 of substrate holder 60 uneven, to prevent the uniformity of plating film thickness to be deteriorated.

Figure 20 is the configured in one piece figure of the plater of sixth embodiment.The plater of sixth embodiment is configured to Plating is carried out to rectangle (angular) substrate, this puts substantially different from the plater of first embodiment to the 5th embodiment. In the following description, pair composition identical with the plater of first embodiment omits detailed description.

The plater of sixth embodiment has chip cassette 102, fixed cell 120, base-board conveying device 122.Such as Described afterwards, the fixed cell 120 of sixth embodiment has organic matter release unit, makes to be set to before substrate holder 60 just The organic matter for being present in the edge part of rectangular substrate is partially broken away from.Use can keep rectangle in the plater of sixth embodiment The substrate holder 60 of substrate.Fixed cell 120 is constituted as follows:Make to be present in rectangle base in organic matter release unit After the organic matter of the edge part of plate is partially broken away from, rectangular substrate is made to be held in substrate holder 60.

Plater also has:Storage area 124, activated bath 129, blows off slot 132, plating slot 10 at pre- wet sump 126.Activation In slot 129, the surface of the substrate after being prewetted by cleanings such as acid is so that it is activated.Storage area 124, pre- wet sump 126, activated bath 129, it is to be arranged in order according to this to blow off slot 132 and plating slot 10.In addition, plater has for by the rectangle of plated processing Base-plate cleaning and the clearing and drying device of drying 135.

Figure 21 is the flow chart for the coating method for indicating sixth embodiment.In this coating method, first, by rectangle base Plate is transported to before plater shown in Figure 20, and photoresist pattern (step S2101) is formed in rectangular substrate.Then, for The rectangular substrate irradiation UV of photoresist pattern, the photoresist residue (ashing processing) on removal rectangular substrate surface and progress light are formed Hinder the hydrophilicity-imparting treatment (removing Slag treatment) (step S2102) on surface.The processing of step S2101 and step S2102 are in Figure 20 institutes It is carried out in any device other than the plater shown.

Then, rectangular substrate is transported to fixed list from the chip cassette 102 of storage rectangular substrate by base-board conveying device 122 Member 120.The edge part of rectangular substrate is cleaned (step S2103) in fixed cell 120.Specifically, in fixed cell In 120, by organic matter release unit to the edge part local application UV or plasma of rectangular substrate, so that organic matter is detached from.

Though the case where not recorded in flow shown in Figure 21, sensor (not shown) be equipped in fixed cell 120, After the organic matter of the edge part to being present in rectangular substrate applies UV or plasma to carry out local removal, edge can be confirmed Whether there is or not polluter (including organic matter) in portion.Specifically, making sensor (spectrophotometer or fluorescent reflection film thickness gauge) first It is configured at the top on the rectangular substrate surface of organic matter release unit positioned at fixed cell 120 is transported to.Make sensing on one side Device is from rectangular substrate central part toward edge part (or from edge part toward portion of substrate center) scanning, on one side from sensor towards rectangle base Plate surface irradiates the light of ultraviolet region (200nm~380nm), such as the light of the wavelength of 365nm, using as exciting light, and Absorbance or fluorescence intensity can be measured.

There is edge part through UV or plasma treatment and being plated without UV or plasma treatment in rectangular substrate surface Face;Seed layer is then formed in the whole surface (plated clad can and edge part) of rectangular substrate.Then, sensor scanning is made to be plated Face and edge part can measure the absorbance or fluorescence intensity of plated clad can and edge part both sides.It is not indicated in the figure of plater Control unit, for example, compare the absorbance of both the plated clad can and edge part, for example, by edge part absorbance relative to Whether the ratio of the absorbance of plated clad can is more than preset threshold value (such as 50% or less), can determine that the pollution of edge part Whether substance (including organic matter and oxidation film) has fully been removed.Above-mentioned ratio is more than the case where threshold value, can determine that edge part Polluter be not removed fully (comprising organic matter and oxidation film).In addition, above-mentioned ratio is not more than the case where threshold value, can sentence The polluter (including organic matter and oxidation film) of deckle edge has been sufficiently removed.The case where measuring fluorescence intensity, also can phase With ground by comparing defined threshold value and measured value, judge whether the polluter of edge part has fully been removed.

According to the judgement, the case where polluter of edge part is not sufficiently removed is judged, also repeat and implement to rectangle The edge part local radiation UV of substrate or the process of plasma.In addition, what the polluter of judgement edge part had fully been removed Situation, then the disengaging for being considered as organic matter terminates, and is transported to each treatment trough by substrate holder conveyer 140, with reality Apply a series of plating.In this way, can judge that the edge part of rectangular substrate whether there is polluter before plating, The rectangular substrate for being directed to the not remaining polluter in edge part later carries out plating, thus can prevent substrate holder more really The contact resistance unevenness of electric contact possessed by 60 causes the planar uniformity of the plating film thickness of rectangular substrate to be deteriorated etc..

The cleaned rectangular substrate in edge part is set to substrate holder 60 (step S2104) by fixed cell 120. At this point, because the organic matter of the edge part of rectangular substrate has disengaged from, therefore the electric contact of substrate holder 60 and cleaned rectangle The edge part of substrate contacts.Thus can reduce organic matter attachment cause substrate holder 60 electric contact contact resistance not .

The rectangular substrate for being held in substrate holder 60 is transported to pre- wet sump by substrate holder conveyer 140 first 126, and substrate W is made to be impregnated in the pure water (step S2105) stored in pre- wet sump 126.Then, rectangular substrate is transported to work Change slot 129, the surface of substrate W is made to be activated (step S2106).

Rectangular substrate is impregnated in any plating unit 134 of plating slot 10, to carry out plating (step S2107). Surface is formed with the rectangular substrate of plating film, is dried up (step S2108) in blowing off slot 132.Then, it is held in substrate The rectangular substrate of retainer 60 is transported to fixed cell 120, and rectangular substrate is removed from substrate holder 60.Substrate transports Device 122 receives rectangular substrate from fixed cell 120, and rectangular substrate is transported to clearing and drying device 135.Rectangular substrate exists Cleaning and the drying (step S2109) on surface are carried out in clearing and drying device 135.

Then, the processing in the step S2103 shown in Figure 21 is described in detail.Figure 22 is provided at the organic of fixed cell 120 The summary side elevation of an example of object release unit 50.Organic matter release unit 50 constitutes UV irradiation units or plasma radiation dress It sets.As shown in figure 22, organic matter release unit 50 has substrate supporting platform 55 (an example for being equivalent to rotating mechanism), the first actuating Device 53 (an example for being equivalent to actuator), the second actuator 52 (an example for being equivalent to actuator), head 51, control unit 54.Base Plate supporting station 55 is configured to adsorb the back sides rectangular substrate S1, and rectangular substrate S1 is made to rotate in a circumferential direction.Also, substrate supporting Platform 55 is with electrostatic adsorption type or vacuum adsorption type absorption rectangular substrate S1.

Head 51 is constituted as follows:From the top for the rectangular substrate S1 for being configured at substrate supporting platform 55, for rectangle The edge part local application UV or plasma of substrate S1.That is, head 51 is configured in the case of irradiating UV, organic matter is detached from dress Set 50 composition UV irradiation units;Head 51 is configured in the case of radiating plasma, organic matter release unit 50 is then constituted etc. from Sub- irradiation unit.Organic matter release unit 50 can be local to the edge part of the rectangular substrate S1 before being held in substrate holder 60 Using UV or plasma.In other words, the region other than the edge part of rectangular substrate S1 is not exposed to UV or plasma.

First actuator 53 and the second actuator 52 can be such that head 51 moves in the horizontal direction.Specifically, first causes Dynamic device 53 can be such that head 51 is moved up in the horizontal direction and in the first party of rectilinear direction;Second actuator 52 can make head 51 It is moved up in the second party vertical with first direction.In the example of diagram, by the first actuator 53, head 51 can be made along square It moves the edge part of shape substrate S1;By the second actuator 52, it is adjusted from the ends rectangular substrate S1 to using UV or plasma Position distance d2.In present embodiment, abutted with the flange part 70a of the containment member 70 of substrate holder 60 with comparing Part more peripheral side Zoned application UV or plasma mode so that distance d2 is about 5mm hereinafter, more preferably about 2mm Mode below adjusts the position on head 51.Also, first direction or second direction are not necessarily referring to single direction in present embodiment, and Refer to such as X-axis forward direction and negative sense it is two-way.

In addition, head 51 is constituted in a manner of it can in vertical direction be moved by the elevating mechanism not indicated in figure.Head UV irradiation sources or plasma the radiation mouth and rectangular substrate S1 distance d1, preferably about 1mm or more about 10mm or less in portion 51.If The distance is less than 1mm, then rectangular substrate S1 may radiate mouth physical contact with UV irradiation sources or plasma.If in addition, should be away from It is more than 10mm from d1, then possibly can not local irradiation UV or plasma.In order to more reliably avoid rectangular substrate and UV irradiation sources Or plasma radiate mouth physical contact, in addition to can local irradiation, it is about 2mm or more about 5mm preferably to make distance d1 Below.

Organic matter release unit 50 also has control unit 54, for controlling head 51, the first actuator 53, the second actuator And the elevating mechanism not indicated in figure.In addition, in order not to so that head 51 is radiated UV or plasma toward the center of rectangular substrate S1 Side diffusion, as shown in figure 22, organic matter release unit 50 can also have shielding 57, in the center of the rectangular substrate S1 on head 51 Cover UV or plasma in side.

Figure 23 A to Figure 23 E indicate to make the edge parts rectangular substrate S1 by organic matter release unit 50 shown in Figure 22 The vertical view of the organic matter release unit 50 for the process that organic matter is detached from.As shown in fig. 23 a, first, organic matter release unit 50 By the elevating mechanism not indicated in figure, head 51 is positioned in vertical direction, then by the second actuator 52, by head 51 Position be positioned at one in four edge parts of rectangular substrate S1.Then, the control unit 54 of organic matter release unit 50 is controlled 51 and first actuator 53 of head processed radiates UV or plasma, on one side by the first actuator 53 along square from head 51 on one side The edge part of shape substrate S1 makes head 51 move, to clean an edge part.

After cleaning an edge part, organic matter release unit 50 makes substrate supporting platform 55 (with reference to Figure 22) rotation, such as Figure 23 B It is shown, so that rectangular substrate S1 is rotated by 90 °.At this point, control unit 54, so that head 51 stops radiation UV or plasma and makes substrate The mode that supporting station 55 rotates controls head 51 and substrate supporting platform 55.In other words, UV is radiated not to be carried out at the same time from head 51 Or plasma controls head 51 and substrate supporting platform 55 in a manner of the rotation rectangular substrate of substrate supporting platform 55 S1.As a result, may be used It prevents for unexpected regional radiation UV or plasma on rectangular substrate S1.

As shown in fig. 23b, organic matter release unit 50 makes UV or plasma stop radiation, makes head by the second actuator 52 Portion 51 is positioned at the edge part of rectangular substrate S1.In present embodiment because have the second actuator 52, even therefore Figure 23 A extremely Rectangular substrate S1 shown in Figure 23 E has the case where long side and short side, and head 51 can be also positioned to the edge part of rectangular substrate S1.

Then, UV or plasma are radiated in 50 one side of organic matter release unit from head 51, pass through the first actuator 53 on one side Head 51 is set to be moved along the edge part of rectangular substrate S1, to clean another edge part.In the same manner, such as Figure 23 C and Figure 23 D institutes Show, as soon as organic matter release unit 50 often cleans an edge part, rectangular substrate S1 is made to be rotated by 90 °, to clean each edge part.

If the cleaning of the edge part on four sides of rectangular substrate S1 terminates, organic matter release unit 50 further makes rectangle Substrate S1 is rotated by 90 °, and rectangular substrate S1 is made to return to position (origin) (Figure 23 E) identical with Figure 23 A.As described above, cleaning square The edge part on four sides of shape substrate S1.In organic matter release unit 50 shown in Figure 22 to Figure 23 E, there can be one group of first actuating Device 53, the second actuator 52 and head 51 can also have these multigroup components.It can be reduced in the case of this needed for cleaning edge part Time.

Figure 24 is provided at another summary side elevation of the organic matter release unit 50 of fixed cell 120.Shown in Figure 24 Organic matter release unit 50 in, it is different from organic matter release unit 50 shown in Figure 22, be configured to substrate supporting platform 55 and do not revolve Turn.Replace, organic matter release unit 50 shown in Figure 24 have make head 51, the first actuator 53 and the second actuator 52 The rotary shaft 56 of rotation.Rotary shaft 56 determines position in such a way that central shaft is by the approximate centre of rectangular substrate S1.Such as figure Shown in 24, head 51, the first actuator 53 and the second actuator 52 can be above the edge parts of rectangular substrate S1 with head 51 Mode directly or indirectly connect with rotary shaft 56.Control unit 54 is caused in addition to control head 51, the first actuator 53 and second Other than dynamic device 52, the driving of rotary shaft 56 is also controlled.

Figure 25 A to Figure 25 E are the edge parts for indicating to make by organic matter release unit 50 shown in Figure 24 rectangular substrate S1 Organic matter be detached from process organic matter release unit 50 vertical view.As shown in fig. 25 a, first, organic matter release unit 50 elevating mechanism by not indicated in figure carries out the positioning of head 51 in vertical direction;It is caused by rotary shaft 56 and second Dynamic device 52 makes the position on head 51 be positioned at one in four edge parts of rectangular substrate S1.Then, organic matter release unit 50 control unit 54 controls head 51 and the first actuator 53, radiates UV or plasma from head 51 on one side, passes through first on one side Actuator 53 makes head 51 be moved along the edge of rectangular substrate S1, to clean an edge part.

After cleaning an edge part, then organic matter release unit 50 makes rotary shaft 56 rotate, and as shown in Figure 25 B, makes head 51 are rotated by 90 °.At this point, control unit 54 is controlled in a manner of so that head 51 is rotated after stopping radiating UV or plasma from head 51 Head 51 and rotary shaft 56.In other words, the radiation of UV or plasma are radiated from head 51 and not to be carried out at the same time with rotary shaft 56 The mode for making head 51 rotate controls head 51 and rotary shaft 56.This prevents to unexpected region on rectangular substrate S1 Radiate UV or plasma.

As shown in Figure 25 B, organic matter release unit 50 makes UV or plasma stop radiation, by the second actuator 52 by head Portion 51 is positioned at the edge part of rectangular substrate S1.Then, UV or plasma are radiated in 50 one side of organic matter release unit from head 51, Head 51 is set to be moved along the edge part of rectangular substrate S1 by the first actuator 53 on one side, to clean another edge part.Phase With ground, as shown in Figure 25 C and Figure 25 D, as soon as organic matter release unit 50 often cleans an edge part, make head 51 with rotary shaft 56 Centered on be rotated by 90 °, to clean each edge part.

If the cleaning of the edge part on four sides of rectangular substrate S1 terminates, organic matter release unit 50 further makes head 51 are rotated by 90 °, and head is made to return to position (origin) (Figure 25 E) identical with Figure 25 A.As described above, cleaning rectangular substrate S1 The edge part on four sides.In the organic matter release unit 50 shown in Figure 24 to Figure 25 E, there can be one group of rotary shaft 56, first to cause Dynamic device 53, the second actuator 52 and head 51, can also have multiple groups of these components.Cleaning edge part institute can be reduced in this situation The time needed.

Figure 26 is provided at another summary side elevation of the organic matter release unit 50 of fixed cell 120.Shown in Figure 26 Organic matter release unit 50 in, it is different from organic matter release unit 50 shown in Figure 22, be equipped with two heads.That is, organic Object release unit 50 have the first head 51a, the second head 51b and with the first head 51a and the second head 51b corresponding two A second actuator 52a, 52b.As shown in figure 26, the first head 51a and the second head 51b be set to clamp the first actuator 53 and Position relative to each other.Therefore, the first head 51a and the second head 51b can be by second actuator 52a, 52b each other identical Move back and forth on direction.

Figure 27 A to Figure 27 C are so that the edge part of rectangular substrate S1 is had by organic matter release unit 50 shown in Figure 26 The vertical view of the organic matter release unit 50 for the process that machine object is detached from.As shown in fig. 27 a, first, organic matter release unit 50 is logical The elevating mechanism not indicated in figure is crossed, carries out the positioning of head 51 in vertical direction, and will by second actuator 52a, 52b The position of first head 51a and the second head 51b are positioned at two edge parts opposite in four edge parts of rectangular substrate S1. Then, the control unit 54 of organic matter release unit 50 controls the first head 51a and the second head 51b, and controls the first actuating Device 53 makes first by the first actuator 53 on one side on one side from the first head 51a and the second head 51b radiation UV or plasma Head 51a and the second head 51b are moved along the edge part of rectangular substrate S1, to clean two opposite edge parts.

It cleans after two opposite edge parts, then organic matter release unit 50 makes substrate supporting platform 55 (with reference to Figure 26) rotation Turn, as shown in figure 27b, rectangular substrate S1 is made to be rotated by 90 °.At this point, control unit 54, to make the first head 51a and the second head 51b stops the mode for making substrate supporting platform 55 rotate after radiation UV or plasma, the first head 51a of control, the second head 51b And substrate supporting platform 55.This prevents to unexpected regional radiation UV or plasma on rectangular substrate S1.

As shown in figure 27b, in the state of stopping radiation UV or plasma, organic matter release unit 50 passes through the second actuating First head 51a and the second head 51b are positioned at two edge parts opposite in rectangular substrate S1 by device 52a, 52b.Then, have 50 one side of machine object release unit passes through the first actuator on one side from the first head 51a and the second head 51b radiation UV or plasma 53 make the first head 51a and the second head 51b be moved along the edge part of rectangular substrate S1, to clean two opposite edges Portion.

If the cleaning of the edge part on four sides of rectangular substrate S1 terminates, organic matter release unit 50 further makes rectangle Substrate S1 rotates 270 degree, and rectangular substrate S1 is made to return to position (origin) (Figure 27 C) identical with Figure 27 A.As described above, cleaning The edge part on tetra- sides rectangular substrate S1.Organic matter release unit 50 shown in Figure 26 and Figure 27 A~Figure 27 C has the first head 51a and the second head 51b.Therefore, it compared to organic matter release unit 50 shown in Figure 22 and Figure 23 A~Figure 23 E, can reduce pair The time that rectangular substrate S1 irradiates the time of UV or plasma and rectangular substrate S1 is made to rotate.In addition, from Figure 26 to Figure 27 shown in C Organic matter release unit 50 in, can have one group of first actuator 53, second actuator 52a, 52b, the first head 51a and the Two head 51b can also have multiple groups of these components.In this case, the time needed for cleaning edge part can be reduced.

Figure 28 is provided at another summary side elevation of the organic matter release unit 50 of fixed cell 120.Shown in Figure 28 Organic matter release unit 50 in, it is different from organic matter release unit 50 shown in Figure 24, be equipped with two heads.That is, organic Object release unit 50 has the first head 51a, the second head 51b, two corresponding with the first head 51a and the second head 51b Second actuator 52a, 52b.As shown in figure 28, the first head 51a and the second head 51b be set to clamp the first actuator 53 and Position relative to each other.Therefore, the first head 51a and the second head 51b can be by second actuator 52a, 52b each other same Move back and forth on direction.

Figure 29 A to Figure 29 C are the edge parts for indicating to make by organic matter release unit 50 shown in Figure 28 rectangular substrate S1 Organic matter be detached from process organic matter release unit 50 vertical view.As shown in figure 29 a, first, organic matter release unit 50 elevating mechanism by not indicated in figure carries out the positioning of the first head 51a and the second head 51b in vertical direction, leads to Crossing rotary shaft 56 and second actuator 52a, 52b makes the first head 51a and the position of the second head 51b be positioned at rectangular substrate S1 In opposite two edge parts.Then, the control unit 54 of organic matter release unit 50 controls the first head 51a, the second head 51b And first actuator 53 passes through first and causes on one side on one side from the first head 51a and the second head 51b radiation UV or plasma Dynamic device 53 makes the first head 51a and the second head 51b be moved along the edge part of rectangular substrate S1, to clean an edge part.

It cleans after two opposite edge parts, then organic matter release unit 50 makes rotary shaft 56 rotate, such as Figure 29 B institutes Show, the first head 51a and the second head 51b is made to be rotated by 90 °.At this point, control unit 54, to make the first head 51a and second Portion 51b stops the mode for making the first head 51a and the second head 51b rotate after radiation UV or plasma, controls the first head 51a and the second head 51b and rotary shaft 56.This prevents to unexpected regional radiation UV on rectangular substrate S1 or wait from Son.

As shown in fig. 29b, in the state of so that the radiation of UV or plasma is stopped, organic matter release unit 50 passes through second Actuator 52a, 52b make the first head 51a and the second head 51b be positioned at the edge part of rectangular substrate S1.Then, organic matter is de- From 50 one side of device from the first head 51a and the second head 51b radiation UV or plasma, make the by the first actuator 53 on one side One head 51a and the second head 51b are moved along the edge part of rectangular substrate S1, to clean two opposite edge parts.

If the cleaning of the edge part on four sides of rectangular substrate S1 terminates, organic matter release unit 50 further makes first Head 51a and the second head 51b rotates 270 degree, so that the first head 51a and the second head 51b return to position identical with Figure 29 A It sets (origin) (Figure 29 C).As described above, the edge part on tetra- sides cleaning rectangular substrate S1.Shown in Figure 28 and Figure 29 A~Figure 29 C Organic matter release unit 50 has the first head 51a and the second head 51b.Therefore, compared to Figure 24 and Figure 25 A~Figure 25 E institutes The organic matter release unit 50 shown, can reduce the time for rectangular substrate S1 irradiation UV or plasma and make end rotation when Between.In addition, in the organic matter release unit 50 shown in Figure 28 to Figure 29 C, can have one group of rotary shaft 56, the first actuator 53, second actuator 52a, 52b, the first head 51a and the second head 51b can also have multiple groups of these components.This situation Under, the time needed for cleaning edge part can be reduced.

In the case of the organic matter release unit 50 of sixth embodiment described above is UV irradiation units, as UV light Source can be used such as the laser light source of high-pressure mercury-vapor lamp, Cooper-Hewitt lamp, black light lamp or the light in the regions radiation UV.Because High-pressure mercury-vapor lamp, Cooper-Hewitt lamp and black light lamp have the tendency of light diverging, therefore the case where these light sources of use, preferably by light Source is set near substrate W, or only irradiates UV to edge part using optical system.Organic matter release unit 50 radiates for plasma The case where device, can be used such as air remote plasma device.

Though bright organic matter release unit 50 is set to fixed cell 120 in sixth embodiment, but not limited to this, it can also set In other units, can be also set in plater additionally as self-contained unit.In addition, though organic matter release unit 50 is cleaning square The device of the edge part on four side of shape substrate, but also for example can only clean the edge part on opposite both sides.In this case, rectangle can be reduced The number of revolutions of substrate S1 or the number of revolutions on head 51.In addition, other organic matter release units 50 shown in Figure 24 to Figure 29 C In, shielding 57 as shown in figure 22 can also be used.

Though bright embodiments of the present invention above, the embodiment of foregoing invention, be for being readily appreciated that the present invention, And the non-limiting present invention.The present invention can then be changed, be improved without departing from its purport, meanwhile, the present invention also includes certainly Its equipollent.In addition, at least part of range of the above subject can be solved, or it can reach the range of at least partly effect In, it arbitrarily can combine or omit each integral part for being recorded in the scope of the claims and specification.For example, can arbitrary constitutional diagram The 1 organic matter release unit 45, oxidation film removal device 24 and sponge to the edge parts cleaning base plate W illustrated in fig. 19 cleans Device 80.

Symbol description

10 plating slots

20 spin rinse drying devices

24,94 oxidation film removal device

25 liquid nozzles

28 liquids

40 aligners

45 organic matter release units

50 organic matter release units

51 heads

The first heads 51a

The second heads 51b

52, the second actuator of 52a, 52b

53 first actuators

54 control units

55 substrate supporting platforms

56 rotary shafts

60 substrate holders

80 sponge cleaning devices

81 rotation microscope carriers

83 DIW nozzles

84 sponge cleaning parts

Claims

1. a kind of plater carries out plating, which is characterized in that include to substrate:

Edge part cleaning device, the edge part cleaning device locally remove the organic matter and oxygen for the edge part for being present in the substrate Change at least one of film;And

Plating slot, the plating slot store plating liquid, and are used in the state of making substrate with anode pickling in the plating liquid, at this Apply voltage between substrate and the anode, to carry out plating.

2. plater as described in claim 1, which is characterized in that

The edge part cleaning device includes organic matter release unit, which makes the side for being present in the substrate The organic matter of edge is locally detached from,

The organic matter release unit includes UV irradiation units or plasma radiological unit, and the UV irradiation units are to described in rotation UV is irradiated in the edge part of substrate, which radiates plasma to the edge part of the substrate of rotation.

3. plater as claimed in claim 2, which is characterized in that

Including aligner, which makes the substrate rotate with the direction of the proper alignment substrate,

The organic matter release unit is set to the aligner.

4. plater as claimed in claim 2, which is characterized in that

The UV irradiation units or the plasma radiological unit are configured at side that can be from the top of the substrate to the substrate The position of edge local application UV or plasma.

5. plater as described in claim 1, which is characterized in that

The edge part cleaning device includes oxidation film removal device, and locally removal is present in the base to the oxidation film removal device The oxidation film of the edge part of plate,

The oxidation film removal device includes liquid cleaning device, which has the side to the substrate of rotation Edge supplies the liquid nozzle of liquid.

6. plater as claimed in claim 5, which is characterized in that

The liquid includes 3wt% or more and 15wt% dilute sulfuric acids below or 2wt% or more and 20wt% citric acids below.

7. plater as claimed in claim 5, which is characterized in that

Including spin rinse drying device, which is configured to that the substrate is made to rotate so that the substrate is dry It is dry,

The oxidation film removal device is set to the spin rinse drying device.

8. plater as claimed in claim 5, which is characterized in that

The liquid cleaning device, which is configured at, locally to supply liquid to the edge part of the substrate from the top of the substrate Position.

9. plater as described in claim 1, which is characterized in that

Including sponge cleaning device, sponge cleaning device removal is present in the particle of the edge part of the substrate.

10. plater as described in claim 1, which is characterized in that

Including sensor, which is constituted as follows:To be present in the edge part organic matter and oxidation film extremely The edge part irradiation light for the substrate that few one is locally removed, and measure the intensity or absorbance of the light of reflection.

11. a kind of coating method is the method for carrying out plating to substrate, which is characterized in that, including following process:

Removing step, the removing step locally remove the edge part for being present in the substrate organic matter and oxidation film at least One;

Keep process, the holding process that the substrate is held in substrate holder;And

Plating process, the plating process carry out plating to the substrate for being held in the substrate holder.

12. coating method as claimed in claim 11, which is characterized in that include following process:

Photoresist pattern formation process, the photoresist pattern formation process form photoresist pattern in the substrate;And

It is ashed process, which is ashed the photoresist pattern;

The removing step carries out after the ashing process.

13. coating method as claimed in claim 11, which is characterized in that

The removing step includes the process for locally radiating UV or plasma to the edge part of the substrate.

14. coating method as claimed in claim 11, which is characterized in that

The removing step includes the process for locally supplying liquid to the edge part of the substrate.

15. coating method as claimed in claim 14, which is characterized in that

16. coating method as claimed in claim 11, which is characterized in that

Including following process:Make the edge part of the substrate of spongy top contact rotation, the process to remove particle.

17. coating method as claimed in claim 11, which is characterized in that

The removing step includes following process:Organic matter in the edge part for making to be present in the substrate is locally detached from it Afterwards, the process for locally removing the oxidation film.

18. coating method as claimed in claim 11, which is characterized in that

The removing step includes following process:Locally removal is present in from the peripheral part of the substrate to substrate center 2mm In the range of organic matter and oxidation film the process of at least one.

19. coating method as claimed in claim 11, which is characterized in that

The removing step includes following process:It locally removes and is present in when the substrate is kept by substrate holder and quilt The area adjacency and the organic matter in the region until substrate outer edge and the work of at least one of oxidation film of containment member sealing Sequence.

20. coating method as claimed in claim 11, which is characterized in that

Including following process:To be present in the edge part organic matter and oxidation film at least one locally removed after The edge part irradiation light of substrate, and measure the intensity of the light of reflection or the process of absorbance.

21. a kind of plater carries out plating, which is characterized in that include to substrate:

Plating slot, the substrate which is used to keep substrate holder applies voltage, to carry out plating;And

Edge part cleaning device, the edge part cleaning device locally remove the edge part for being present in the substrate organic matter, At least one of oxidation film and particle.

22. a kind of coating method is the method for carrying out plating to substrate, which is characterized in that include following process:

Removing step, which locally removes is present in the base before the substrate is held in substrate holder At least one of the organic matter of the edge part of plate, oxidation film and particle;

23. plater as described in claim 1, which is characterized in that

The organic matter release unit includes UV irradiation units or plasma radiological unit, and the UV irradiation units are to the substrate UV is irradiated in edge part, which radiates plasma to the edge part of the substrate.

24. plater as claimed in claim 23, which is characterized in that

The edge part cleaning device has:

Head, the head are configured to locally apply UV or plasma to the edge part of the substrate;And

Actuator, the actuator make the head move in the horizontal direction.

25. plater as claimed in claim 24, which is characterized in that

There is the actuator the first actuator and the second actuator, first actuator head to be made to move up in a first direction Dynamic, which makes the head be moved up in the second party vertical with the first direction.

26. plater as claimed in claim 24, which is characterized in that

The edge part cleaning device has the control unit for controlling the head and the actuator,

The actuator is configured to that the head is made to move along the edge part of the substrate,

The control unit controls the head and the actuator so that is carried out at the same time UV based on the head or plasma Radiation and the head based on the actuator are moved along the edge part of the substrate.

27. plater as claimed in claim 26, which is characterized in that

The edge part cleaning device has the rotating mechanism for making the end rotation,

The control unit controls the head and the rotating mechanism so that when the rotating mechanism makes the end rotation, The head is set to stop radiation UV or plasma.

28. plater as claimed in claim 26, which is characterized in that

There is the edge part cleaning device rotating mechanism and control unit, the rotating mechanism substrate to be made to rotate, the control unit The head, the rotating mechanism and the actuator are controlled,

The control unit controls the head and the rotating mechanism so that when the rotating mechanism makes the substrate rotate, The head is set to stop radiation UV or plasma.

29. coating method as claimed in claim 11, which is characterized in that

The removing step includes following process:Make side of the head of radiation UV or plasma on one side along the substrate of rectangle Edge is moved, the process for radiating UV or plasma on one side.

30. coating method as claimed in claim 29, which is characterized in that

The removing step includes following process:The head is set to move in the horizontal direction, so that the head and rectangle The process of the edge part aligned in position of the substrate.

31. coating method as claimed in claim 29, which is characterized in that

The removing step includes following process:After the edge part radiation UV or plasma of the substrate of rectangle, Stop radiation UV or plasma on one side, makes the process of the end rotation on one side.

32. coating method as claimed in claim 29, which is characterized in that

The removing step includes following process:After the edge part radiation UV or plasma of the substrate of rectangle, Stop radiation UV or plasma, the process on one side rotating the substrate of rectangle on one side.