JP2006228862A - Device and method for removing foreign substance and processing system - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a foreign substance removing device, processing system, and foreign substance removing method, capable of effectively removing any foreign substance from a substrate. <P>SOLUTION: The foreign substance removing device comprises a support 140 for supporting a substrate W, a foreign substance remover 141 for removing foreign substance from the substrate W, and a control unit 150 which controls adjusting of the position of foreign substance remover 141 relative to a foreign substance, based on the location information about the foreign substance acquired by a foreign substance inspection mechanism which inspects foreign substance on the substrate W. As the foreign substance remover 141, a collector member is used for collecting any foreign substance by an electrostatic force. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a foreign matter removing device that removes foreign matter from a substrate, a processing system including the foreign matter removing device, and a foreign matter removing method that removes foreign matter from a substrate.

  In a semiconductor device manufacturing process, various inspections are performed on a semiconductor wafer (hereinafter, “wafer”). For example, in a photolithography process, a defect that inspects for the presence of foreign matter or pattern scratches on the wafer, measurement of the line width of the pattern formed on the resist film on the wafer, measurement of pattern deviation, measurement of film thickness, etc. Inspections are conducted. A wafer determined to be a non-defective product by these inspections is sent to the next process. On the other hand, a recyclable wafer determined to be defective is transported to a regeneration processing system and subjected to appropriate regeneration processing such as cleaning processing and resist removal (see, for example, Patent Document 1). For example, when a pattern shift or the like is detected, the resist forming the pattern on the wafer is dissolved and removed by a chemical solution, and a cleaning process is performed to return to the state before the resist is applied on the wafer. If there is no problem with the pattern and only foreign matter adheres to the wafer, cleaning processing is performed to wash out the foreign matter from the wafer. After such cleaning processing, the wafer is sent to the next process together with a non-defective wafer.

JP 2003-309067 A

  However, in the conventional reproduction process, it has been difficult to reliably remove, for example, foreign matters attached between the patterns. For this reason, there is a problem in that the cost of the reprocessing process is increased because it requires time and labor in the reprocessing process, such as cleaning the wafers one by one or increasing the cleaning time.

  The present invention has been made in view of the above points, and an object thereof is to provide a foreign matter removing apparatus, a processing system, and a foreign matter removing method capable of effectively removing foreign matters from a substrate.

  In order to solve the above-described problems, according to the present invention, the position of the foreign matter obtained by the support portion that supports the substrate, the foreign matter remover that removes the foreign matter from the substrate, and the foreign matter inspection mechanism that performs the foreign matter inspection on the substrate. There is provided a foreign matter removing apparatus comprising a control unit that performs control to adjust the position of the foreign matter remover with respect to foreign matter based on information. According to such a foreign matter removing apparatus, the foreign matter can be reliably removed from the surface of the substrate by adjusting the position of the foreign matter removing mechanism based on the foreign matter position information.

  The foreign matter remover may be a collecting member that collects foreign matter by electrostatic force. Further, a laser beam irradiator that irradiates a foreign object with laser light, or a suction nozzle that sucks a foreign object may be used.

  Further, two or more different types of foreign matter removers may be provided. The control unit may determine which of the two or more different types of foreign matter removers is used to remove the foreign matter based on the foreign matter type information obtained by the foreign matter inspection mechanism. .

  The foreign matter inspection mechanism may be a macro defect inspection mechanism that performs a macro defect inspection. The “macro defect inspection” is an inspection that detects a relatively large defect (macro defect) that can be seen with the naked eye. The “macro defect inspection mechanism” is, for example, imaging a substrate and performing image processing. Is used for macro defect inspection.

  Further, according to the present invention, a substrate processing apparatus for processing a substrate, a foreign substance inspection apparatus having a foreign substance inspection mechanism for performing a foreign substance inspection on the substrate, and the foreign substance removing apparatus according to claim 1. And a transfer device for transferring the substrate between the substrate processing apparatus, the foreign substance inspection apparatus and the foreign substance removal apparatus.

  Furthermore, according to the present invention, foreign matter inspection is performed on the substrate, the position of the foreign matter remover with respect to the foreign matter is adjusted based on the positional information of the foreign matter present on the surface of the substrate obtained by the foreign matter inspection, There is provided a foreign matter removing method characterized by removing foreign matter from a substrate by a foreign matter remover.

  In this foreign matter removing method, the foreign matter may be removed from the substrate by collecting the foreign matter by electrostatic force. Further, the foreign matter may be removed from the substrate by irradiating the foreign matter with laser light. You may make it remove from a board | substrate by attracting | sucking a foreign material. Further, depending on the type of foreign matter, one of a method for collecting the foreign matter by electrostatic force, a method for irradiating the foreign matter with laser light, and a method for sucking the foreign matter may be selected. The foreign matter inspection may be a macro defect inspection.

  According to the present invention, the foreign matter can be reliably removed from the surface of the substrate by adjusting the position of the foreign matter removing mechanism with respect to the foreign matter based on the positional information of the foreign matter obtained by the defect inspection mechanism and removing the foreign matter. it can. By using the electrostatic force of the collecting member, the energy of the laser beam, the suction force of the suction nozzle, etc., foreign matters can be effectively removed. By performing the regeneration process after removing foreign substances from the substrate, the regeneration process of the substrate can be simplified and the cost can be reduced.

  Hereinafter, a first embodiment of the present invention will be described. FIG. 1 is a plan view schematically showing a configuration of a coating and developing treatment system 1 in which a photolithography process for forming a predetermined pattern on a wafer as a substrate is performed. FIG. 2 is a front view of the coating and developing treatment system 1. FIG. 3 is a rear view of the coating and developing treatment system 1.

  As shown in FIG. 1, the coating and developing treatment apparatus 1 carries out, for example, 25 substantially disk-shaped wafers W in the cassette unit from the outside to the coating and developing treatment system 1 or carries wafers W into the cassette C. A cassette station 2 for taking out the wafer, an inspection station 3 for performing a predetermined inspection on the wafer W, and a processing station 4 in which various processing devices for performing predetermined processing in a single-wafer type in the coating and developing process are arranged in multiple stages, The interface unit 5 for transferring the wafer W to and from an exposure apparatus (not shown) provided adjacent to the processing station 4 is integrally connected.

  The cassette station 2 is provided with a cassette mounting table 6. The cassette mounting table 6 can mount a plurality of cassettes C in a row in the X direction (vertical direction in FIG. 1). The cassette station 2 is provided with a wafer transfer body 8 that can move in the X direction on the transfer path 7. The wafer carrier 8 is also movable in the wafer arrangement direction (Z direction; vertical direction) of the wafers W accommodated in the cassette C, and is selective to the wafers W in each cassette C arranged in the X direction. Can be accessed. Further, the wafer carrier 8 can rotate in the θ direction around the Z axis, and can also access a mounting portion 10a of the inspection station 3 described later.

  The inspection station 3 includes, for example, two measurement device groups H1 and H2 in which a plurality of measurement devices for inspection are arranged in multiple stages. The first measurement device group H1 is disposed, for example, on the negative side in the X direction (downward in FIG. 1) of the inspection station 3, and the second measurement device group H2 is, for example, the positive direction in the X direction of the inspection station 3 (see FIG. 1 above). On the cassette station 2 side of the inspection station 3, a delivery unit 10 for delivering the wafer W to and from the cassette station 2 is disposed. The delivery unit 10 is provided with a placement unit 10a on which, for example, a wafer W is placed. Between the first measurement device group H1 and the second measurement device group H2, for example, a wafer transfer device 12 that is movable along the X direction on the transfer path 11 is provided. The wafer transfer device 12 is movable, for example, in the vertical direction and is also rotatable in the θ direction, and each measuring device including a defect inspection device 21 (described later) provided in the measuring device groups H1, H2 and a foreign matter removing device 22 are provided. , The transfer unit 10, and each substrate processing apparatus (to be described later) in the third processing apparatus group G 3 on the processing station 4 side can be accessed, the wafer W is transferred between these apparatuses, and The wafer W can be carried in and out.

  For example, as shown in FIG. 2, the first measuring device group H1 includes a line width measuring device 20 for measuring the line width of a pattern formed on the wafer W, a defect inspection device 21 as a foreign matter inspection device, and the present invention. The foreign matter removing devices 22 are stacked in three stages in order from the bottom. The configurations of the defect inspection apparatus 21 and the foreign substance removal apparatus 22 will be described in detail later.

  In the second measuring device group H2, for example, as shown in FIG. 3, there are a film thickness measuring device 23 for measuring the film thickness of the film on the wafer W and an overlay measuring device 24 for measuring a deviation in exposure overlay. Are stacked in two stages.

  As shown in FIG. 1, the processing station 4 includes, for example, five processing device groups G1 to G5 in which a plurality of substrate processing devices are arranged in multiple stages. On the negative side in the X direction (downward in FIG. 1) of the processing station 4, a first processing device group G1 and a second processing device group G2 are sequentially arranged from the inspection station 3 side. A third processing device group G3, a fourth processing device group G4, and a fifth processing device group G5 are sequentially arranged from the inspection station 3 side on the X direction positive direction (upward direction in FIG. 1) side of the processing station 4. Has been placed. A first transfer device 30 is provided between the third processing device group G3 and the fourth processing device group G4. The first transfer device 30 can selectively access the first processing device group G1, the third processing device group G3, and the fourth processing device group G4 to transfer the wafer W. A second transfer device 31 is provided between the fourth processing device group G4 and the fifth processing device group G5. The second transfer device 31 can selectively access the second processing device group G2, the fourth processing device group G4, and the fifth processing device group G5 to transfer the wafer W.

  As shown in FIG. 2, in the first processing unit group G1, a liquid processing apparatus for supplying a predetermined liquid to the wafer W to perform processing, for example, resist coating apparatuses 40, 41, and 42 for applying a resist solution to the wafer W , Bottom coating devices 43 and 44 for forming an antireflection film for preventing reflection of light during the exposure process are stacked in five stages in order from the bottom. In the second processing unit group G2, liquid processing units, for example, development processing units 50 to 54 for supplying a developing solution to the wafer W and performing development processing are stacked in five stages in order from the bottom. In addition, chemical chambers 60 and 61 for supplying various processing liquids to the liquid processing apparatuses in the processing apparatus groups G1 and G2 are provided at the bottom of the first processing apparatus group G1 and the second processing apparatus group G2. Are provided.

  For example, as shown in FIG. 3, the third processing unit group G3 includes a temperature control unit 70, a transition unit 71 for transferring the wafer W, and a high-accuracy temperature for heating the wafer W under high-precision temperature control. Preparation apparatuses 72 to 74 and high temperature heat treatment apparatuses 75 to 78 that heat-treat the wafer W at a high temperature are stacked in nine stages in order from the bottom.

  In the fourth processing unit group G4, for example, a high-precision temperature control unit 80, pre-baking units 81 to 84 that heat-treat the resist-coated wafer W, and post-baking units 85 to 85 that heat-process the developed wafer W. 89 are stacked in 10 steps from the bottom.

  In the fifth processing unit group G5, there are a plurality of thermal processing apparatuses that heat-treat the wafer W, such as high-precision temperature control apparatuses 90 to 93, and post-exposure baking apparatuses 94 to 99 that heat-treat the exposed wafer W in order from the bottom. It is stacked on the stage.

  As shown in FIG. 1, a plurality of processing devices are arranged on the positive side in the X direction of the first transfer device 30. For example, as shown in FIG. 3, an adhesion device 100 for hydrophobizing the wafer W is shown. , 101, and heat treatment apparatuses 102 and 103 for heat-treating the wafer W are stacked in four stages in order from the bottom. As shown in FIG. 1, a peripheral exposure device 104 that selectively exposes only the edge portion of the wafer W, for example, is arranged on the positive side in the X direction of the second transfer device 31.

  For example, as shown in FIG. 1, the interface unit 5 includes a wafer transfer body 111 that moves on a transfer path 110 that extends in the X direction, and a buffer cassette 112. The wafer carrier 111 is movable in the Z direction and rotatable in the θ direction, and accesses an exposure apparatus (not shown) adjacent to the interface unit 5, the buffer cassette 112, and the fifth processing unit group G5. The wafer W can be transferred.

  Next, the configuration of the defect inspection apparatus 21 described above will be described in detail. FIG. 4 is a schematic diagram showing an outline of the configuration of the defect inspection apparatus 21.

  The defect inspection apparatus 21 displays an image such as scattered light or diffracted light from the wafer W via the mounting table 120 on which the wafer W is mounted, the illumination unit 121 that irradiates the wafer W with illumination light, and the light receiving lens 122. And an imaging unit 123 for imaging. The illumination unit 121 includes a light source and the like. The imaging unit 123 includes a CCD camera, for example. The image picked up by the image pickup unit 123 is sent to the image processing unit 125. In the present embodiment, the defect inspection mechanism 126 includes an illumination unit 121, a light receiving lens 122, an imaging unit 123, and an image processing unit 125.

  The image processing unit 125 has a function of detecting a defect present on the wafer W by performing image processing on the captured image of the wafer W or monitoring the amount of light of the image. For example, an image of a normal surface of a normal wafer W (surface on which a resist pattern is formed) is stored in the image processing unit 125, and the normal image of the wafer W and the surface of the captured surface of the wafer W are recorded. The image is compared with the image processing unit 125, and a mismatch point between the two is detected as a defect. Thereby, defects existing on the surface of the wafer W are automatically detected over a relatively wide range, for example, the entire surface of the wafer W. Further, the position coordinates and size of each defect on the surface of the wafer W are automatically detected.

  The defects that can be detected by the defect inspection mechanism 126 are mainly large defects that are visible to the naked eye among defects existing on the surface of the wafer W, that is, macro defects, for example. . Examples of detected macro defects include foreign matters attached to the surface of the wafer W, scratches on the resist pattern, uneven application of the resist film, uneven film thickness, and abnormal cross-sectional shape. That is, the defect inspection mechanism 126 functions as a macro defect inspection mechanism that performs a macro defect inspection on the wafer W. Further, the function as the macro defect inspection mechanism includes a function as a foreign matter inspection mechanism that performs foreign matter inspection on the wafer W.

  The foreign matters existing on the wafer W are of various types such as those mixed in chemicals and processing gases, those generated from movable parts such as a transfer device, and those generated by reaction in the processing device. There are multiple types, for example, more than 10 types. As described above, various defects may exist in the wafer W, but the image processing unit 125 can identify the type of each defect based on characteristics such as size and color in the captured image. Further, the image processing unit 125 stores the types of foreign matters (removable objects described later) that can be removed by the foreign matter removing apparatus 22, and can determine whether or not such removed objects have been detected. Further, the image processing unit 125 has a function of creating a defect map converted to electronic information including information on the type and position coordinates of each defect. This defect map is transmitted from the image processing unit 125 to the control unit 150 of the foreign matter removing apparatus 22 described later, for example, when a removal target is detected on the surface of the wafer W.

  Next, the configuration of the foreign matter removing device 22 described above will be described in detail. FIG. 5 is a schematic diagram showing an outline of the configuration of the foreign matter removing apparatus 22.

  The chamber 131 of the foreign matter removing apparatus 22 is provided with an opening 132 for loading and unloading the wafer W and a shutter 133 for opening and closing the opening 132, and the chamber 131 is mounted as a support unit for supporting the wafer W. A mounting table 140 is provided. The wafer W is mounted substantially horizontally on the top surface of the mounting table 140 with the surface (the surface on which the resist pattern is formed) as the top surface. Further, the mounting table 140 constitutes, for example, an XY stage, and a mounting table moving mechanism (not shown) that moves the mounting table 140 in a substantially horizontal direction along the X direction and the Y direction is provided.

  Above the mounting table 140, a collecting needle 141 is provided as a foreign matter remover that removes foreign matters and as a collecting member that collects foreign matters by electrostatic force. The collection needle 141 is formed in a tapered shape so that the diameter decreases, for example, as it goes downward, and is attached to the distal end portion of the support beam 142 so that the distal end is directed downward and substantially vertical. It has been. The base end portion of the support beam 142 is supported by a lifting lot 144 that can be lifted and lowered by driving the lifting mechanism 143. The material of the collection needle 141 is a conductive material such as metal, and the surface of the collection needle 141 can be charged. The collecting needle 141 is connected to a cathode of a DC power supply 145 for electrostatic adsorption via a support beam 142, and a DC voltage is applied to the collecting needle 141 by the DC power supply 145. Yes. As a result, negative charges are collected on the surface of the collecting needle 141 and become negatively charged. The anode of the DC power supply 145 is grounded.

  Further, the foreign substance removing device 22 includes a control unit 150 that controls driving of the mounting table moving mechanism (not shown) and driving of the lifting mechanism 143. By controlling the control unit 150, the mounting table moving mechanism is driven and the mounting table 140 is moved in the horizontal plane, so that the tip of the collection needle 141 is moved relative to the wafer W to a desired position. Can be done.

  As described above, there are a plurality of types of foreign matter found on the wafer W, and these are those adhered to the resist pattern or the surface of the film on the wafer W as shown in FIG. , A resist pattern or a film that is buried and fixed in a film. Among them, for example, when a collecting needle 141 to which a voltage is applied is brought close to a foreign matter adhering to the resist pattern or the film surface, the foreign matter is attracted to the surface of the collecting needle 141 by electrostatic force, and the wafer W Removed from above. The types of foreign matters (objects to be removed by the collection needle 141) that can be removed by the collection needle 141 in this way are stored in the control unit 150. The state of the foreign matter such as whether the foreign matter is attached to or buried in the surface of the wafer W can be estimated from the type of foreign matter.

  In addition, the defect map created by the image processing unit 125 of the defect inspection apparatus 21 described above is transmitted to the control unit 150. The control unit 150 has a function of discriminating a removal target from information on the type of foreign matter included in the obtained defect map and reading position information of each removal target on the wafer W. Furthermore, by controlling the movement of the mounting table 140 based on the read position information, the collection needle 141 with respect to each removal object is positioned so that the tip of the collection needle 141 is relatively close to each removal object. It has a function to adjust the position.

  In the coating and developing treatment system 1 configured as described above, first, one wafer W is taken out from the cassette C on the cassette mounting table 6 by the wafer transfer body 8, and the delivery unit 10 of the inspection station 3. Is passed on. The wafer W transferred to the transfer unit 10 is transferred by the wafer transfer device 12 to the temperature control device 70 belonging to the third processing device group G3 of the processing station 4. The temperature of the wafer W transferred to the temperature control device 70 is adjusted, and then transferred to the bottom coating device 43, for example, by the first transfer device 30, where an antireflection film is formed. The heat treatment device 75 and the high-precision temperature control device 80 are sequentially conveyed, and predetermined processing is performed in each processing device.

  Thereafter, the wafer W is transferred to the resist coating device 40 by the first transfer device 30, and a resist film is formed on the wafer W. The wafer W on which the resist film is formed is transferred to the pre-baking device 81 and subjected to heat treatment, and then sequentially transferred to the peripheral exposure device 104 and the high-precision temperature control device 93 by the second transfer device 31. A predetermined process is performed in the apparatus. Thereafter, the wafer W is transferred to the exposure apparatus (not shown) via the interface unit 5 by the wafer transfer body 111, and a predetermined pattern is exposed on the resist film. The wafer W for which the exposure processing has been completed is returned to the processing station 4 through the interface unit 5 again, and is sequentially transferred by the second transfer device 31 to the post-exposure baking device 94 and the high-accuracy temperature control device 91. After the processing, it is transported to the development processing device 50 and subjected to the development processing. By this development treatment, the resist film is selectively dissolved, and a predetermined pattern is formed on the resist film on the wafer W. After the development processing, the wafer W is transferred to the post-baking device 85 and subjected to heat treatment, and then transferred to the high-precision temperature control device 72 and subjected to cooling processing.

  Thereafter, the wafer W is transferred from the transition device 71 to the line width measurement device 20 belonging to the first measurement device group H1 of the inspection station 3 by the wafer transfer device 12, for example, and the line width of the pattern formed on the wafer W is measured. Measurement is performed.

  Next, the wafer W is carried into the defect inspection device 21 from the line width measuring device 20 by the wafer transfer device 12, and the presence or absence of defects on the wafer is inspected. In the defect inspection apparatus 21, an image of the wafer W is captured by the imaging unit 123, and the captured image is subjected to image processing by the image processing unit 125. Then, the type of each defect present on the surface of the wafer W and the position coordinates of each defect on the surface of the wafer W are detected, and a defect map relating to the detected defect is converted into electronic information. In addition, when the object to be removed in the foreign material removal apparatus 22 is detected on the surface of the wafer W by this defect inspection, the obtained defect map is transmitted from the image processing unit 125 to the control unit 150 of the foreign material removal apparatus 22. The

  After the defect inspection is completed, the wafer W determined by the image processing unit 125 that there is an object to be removed is transported to the foreign matter removing device 22 by the wafer transport device 12. The foreign matter removing device 22 causes the collecting needle 141 to collect the foreign matter on the wafer W that is determined to be a removal target based on the defect map transmitted from the image processing unit 125 using electrostatic force. As a result, the wafer W is removed. When the foreign matter removing process in the foreign matter removing device 22 is completed, the wafer W is again carried into the defect inspection device 21 and the wafer W is subjected to defect inspection, whereby each removal object is removed by the foreign matter removing device 22. It is determined whether or not. As a result, when a removal target that has not yet been removed is detected, the wafer W is transferred again to the foreign matter removing device 22 to remove foreign matter. Thus, the defect inspection and the foreign matter removal may be repeated until all the removal objects are removed from the wafer W.

  On the other hand, the wafer W determined by the image processing unit 125 that there is no object to be removed is unloaded from the defect inspection device 21 by the wafer transfer device 12 and loaded into the film thickness measurement device 23, and the film thickness on the wafer W is increased. After the measurement, it is carried into the overlay measurement device 24, and the overlay deviation of the exposure is measured.

  Of the wafers W that have been subjected to a series of inspections in the inspection station 3, non-defective wafers W for which no defects have been detected in the inspection station 3 are transferred to the transfer unit 10 by the wafer transfer device 12. It is returned to the cassette C by the carrier 8. On the other hand, the wafer W in which a defect is detected in any of the line width measuring device 20, the film thickness measuring device 23, and the overlay measuring device 24 of the inspection station 3, and a defect other than the removal target is detected in the defect inspection device 21. The wafer W thus collected is collected as a defective product, classified according to the type of defect, and transferred to a regeneration processing system (not shown). Note that the wafer W in which no defect other than adhesion of the object to be removed is detected in a series of inspections at the inspection station 3 is completed as the non-defective wafer W after the foreign substance removal processing by the foreign substance removal apparatus 22 is completed. C can be stored. As described above, a series of processes in the coating and developing treatment apparatus 1 is completed, and the carrier C containing the wafer W is transferred to a system that performs the next process.

  In the reproduction processing system (not shown), appropriate reproduction processing is performed on the wafer W for each type of defect. For example, for a wafer W in which a pattern line width defect, pattern deviation, pattern film resist film thickness defect, pattern scratches, etc. are detected, the resist on the wafer is dissolved and removed with a chemical solution. Then, a cleaning process is performed to restore the state before the resist is applied on the wafer. Thereafter, it is carried into the coating and developing treatment apparatus 1 again, and a series of coating and developing processes are performed. In addition, when there is no abnormality in the pattern and foreign matter or dirt other than the removal target that cannot be removed by the foreign matter removing device 22 is attached, a cleaning process is performed to wash out the foreign matter and dirt from the wafer W. After the cleaning process, it is sent to the next process in the same manner as the non-defective wafer W in the coating and developing treatment apparatus 1.

  Next, the foreign matter removal process performed by the foreign matter removing apparatus 22 will be described in detail. When the wafer W on which the pattern is formed is loaded into the chamber 131 of the foreign matter removing apparatus 22, the wafer W is placed on the mounting table 140. On the other hand, the control unit 150 stores the defect map obtained by the defect inspection apparatus 21 described above. Then, the control unit 150 reads position information included in the defect map, that is, position coordinates of each removal target on the wafer W.

  When the wafer W is mounted on the mounting table 140, the control unit 150 drives a mounting table moving mechanism (not shown) based on the position information of the object to be removed, so that the mounting table 140 on which the wafer W is mounted is in a substantially horizontal plane. To move in the X and Y directions. As the mounting table 140 moves, the relative position of the collection needle 141 with respect to the wafer W is adjusted, and the tip of the collection needle 141 is moved relatively above the object to be removed. When the tip of the collecting needle 141 charged with a DC voltage applied by the DC power source 145 is brought close to the object to be removed as shown in FIG. 5, the object to be removed is attracted to the collecting needle 141 by electrostatic force and is attracted to the wafer. W is separated from the upper side and is electrostatically attracted to the tip of the collecting needle 141. The collection needle 141 moves up and down, and the tapered tip of the collection needle 141 is inserted into the gap between the patterns on the wafer W, so that the object to be removed in the gap can also be reliably adsorbed. . In this way, under the control of the control unit 150, the wafers W are sequentially aligned so that the collection needle 141 comes close to the foreign matter that is the removal target, and each removal target is collected by the collection needle 141. Then, it is removed from the wafer W. After the removal target is removed from the wafer W, the wafer W is unloaded from the chamber 131 by the wafer transfer device 12.

  According to the above embodiment, the removal object is collected on the collection needle 141 using electrostatic force by sequentially bringing the collection needle 141 close to each removal object on the surface of the wafer W. Thus, it can be effectively removed from the surface of the wafer W. Further, using the positional information of the removal target on the wafer W obtained by the defect inspection mechanism 126 of the defect inspection apparatus 21, alignment is performed so that the collection needle 141 is close to the removal target. Thus, the object to be removed can be reliably collected and removed.

  Further, after the removal target is removed from the wafer W in the coating / development processing system 1, the regeneration processing is performed in the regeneration processing system. Therefore, in the regeneration processing system, steps such as a cleaning process for removing foreign matter are simply or omitted. Is possible. Therefore, the reproduction processing system and the reproduction processing process can be simplified. For example, by reducing the amount of chemicals used for cleaning, the cost required for the regeneration process can be reduced. Furthermore, the cleaning process time can be shortened to improve the throughput. Further, for example, for the wafer W in which no defect other than adhesion of the object to be removed is detected in the inspection station 3, the regeneration process can be completed only by the foreign substance removal process in the foreign substance removal apparatus 22, and is transferred to the reproduction processing system. There is no need to do. Therefore, labor and the like required for transportation can be omitted, which is efficient.

  In the first embodiment described above, the collecting member is the tapered collecting needle 141, but the shape of the collecting member is not limited to this, and may be, for example, an elongated needle shape. In addition, the cathode of the DC power supply 145 is connected to the collection needle 141, but the anode of the DC power supply 145 is connected instead of the cathode so that the surface of the collection needle 141 is positively charged. Also good. It may be possible to switch between a state in which the surface of the collection needle 141 is negatively charged and a state in which the surface is positively charged. In this case, for example, by switching between a negatively charged state and a positively charged state according to the property of the removal object, various removal objects can be collected more effectively.

  Further, in the first embodiment described above, the configuration including the collecting member that collects the foreign matter by electrostatic force as the foreign matter removing device has been described. However, the foreign matter removing device and the foreign matter removing mode are as described above. It is not limited. For example, the foreign matter can be removed by irradiating the foreign matter with laser light or sucking the foreign matter. FIG. 6 shows a second embodiment of the present invention for removing foreign matter using laser light. In FIG. 6, portions having substantially the same functional configuration as the foreign substance removing device 22 are denoted by the same reference numerals, and redundant description is omitted. A foreign substance removing device 160 shown in FIG. 6 includes a laser beam irradiator 161 that irradiates a laser beam R as a foreign substance removing device instead of the collecting needle 141 in the foreign substance removing device 22. The laser beam irradiator 161 is provided above the mounting table 140, and the irradiation window 162 that emits the laser beam R toward the wafer W is directed downward. The laser light R emitted from the irradiation window 162 is directed, for example, in a substantially vertical direction with respect to the wafer W on the mounting table 140. Further, a laser light source 164 is connected to the laser light irradiator 161 via an optical fiber 163. In such a configuration, under the control of the control unit 150, for example, based on the position information of the defect map, the irradiation window 162 is positioned above the foreign matter, that is, the irradiation position of the laser beam R is set to the foreign matter position. The irradiation position of the laser beam R with respect to the foreign matter is adjusted as the mounting table 140 moves so as to match. When the laser beam R emitted from the laser light source 164 is irradiated onto the foreign matter such as the organic matter on the wafer W from the irradiation window 162, the foreign matter is dissolved by the energy of the laser beam R or is blown from the surface of the wafer W. It is. Accordingly, the foreign matter can be removed from the wafer W by dissolving or scattering the foreign matter. Further, if the laser beam R is used, not only the foreign matter adhering to the surface of the wafer W but also the foreign matter buried in the pattern or the film on the wafer W can be removed. Therefore, a foreign object of a different type from the case where the collection needle 141 is used can be set as a removal target.

  FIG. 7 shows a third embodiment of the present invention for sucking foreign matter. In FIG. 7, portions having substantially the same functional configuration as the foreign substance removing device 22 are denoted by the same reference numerals, and redundant description is omitted. The foreign matter removing apparatus 170 shown in FIG. 7 includes a suction nozzle 171 that sucks foreign matter as a foreign matter remover instead of the collecting needle 141 in the foreign matter removing apparatus 22. The suction nozzle 171 is formed, for example, in a tapered shape whose diameter decreases as it goes downward, and is provided above the mounting table 140 such that its tip is directed downward and substantially vertical. A suction port 172 is opened at the tip of the suction nozzle 171, and a suction path 173 connected to the suction port 172 is provided inside the suction nozzle 171. A suction unit 174 such as a pump is connected to the proximal end side of the suction path 173. The suction nozzle 171 is attached to the tip of the support beam 142 and can be lifted and lowered by driving the lifting mechanism 143. In such a configuration, the control unit 150 controls the position of the suction nozzle 171 with respect to the foreign matter according to the movement of the mounting table 140 so that the suction port 172 is close to the foreign matter based on position information of the defect map, for example. Adjusted. When the suction unit 174 is activated, the foreign matter is separated from the wafer W by the suction force of the suction unit 174 and is sucked into the suction port 172 and is discharged to the suction unit 174 side through the suction path 173. In this way, foreign matter can be removed from the wafer W by being sucked by the suction nozzle 171.

  In the first, second, and third embodiments described above, the position of the foreign substance remover in the X and Y directions is not moved, and the wafer is moved by moving the mounting table 140 in the X and Y directions. The relative position of the foreign substance remover with respect to the foreign substance on W was adjusted, but the foreign substance remover can be moved in the X and Y directions in a substantially horizontal plane, and by moving these in a substantially horizontal plane, You may enable it to adjust the relative position with respect to the foreign material in the substantially horizontal surface of a foreign material removal device. Further, the mounting table 140 may be configured to move up and down in a substantially vertical direction, and the foreign substance remover may be moved closer to and away from the wafer W in the substantially vertical direction by moving the mounting table 140 up and down.

  In the first, second, and third embodiments described above, the foreign substance removing device is provided with one foreign substance removing device. However, the foreign substance removing device includes a plurality of foreign substance removing devices. You may prepare. Furthermore, it is good also as a structure which can each move a some foreign material removal device to a X direction or a Y direction in a substantially horizontal plane. If it does so, the foreign material removal by each foreign material removal device can be performed in parallel by adjusting the position of each foreign material removal device with respect to the foreign material individually. Therefore, foreign matter removal can be performed more efficiently in a short time.

  Further, the foreign matter removing apparatus may include a plurality of two or more different types of foreign matter removers. For example, any two or all of the collection needle 141, the laser beam irradiator 161, and the suction nozzle 171 may be provided as a foreign substance remover. Furthermore, a foreign substance remover may be selected and used according to the type of foreign substance. If it does so, various foreign materials can be made into the removal target in a foreign material removal apparatus, and each foreign material can be effectively removed by the method suitable for the property. For example, when removing the foreign matter adhering to the surface of the wafer W, a method of collecting the foreign matter with the collecting needle 141 or a method of sucking the foreign matter with the suction nozzle 171 is selected. On the other hand, when removing foreign matter buried in the surface of the wafer W, foreign matter firmly adhered to the surface of the wafer W, or the like that is difficult to remove with the collecting needle 141 or the suction nozzle 171, laser light is used. A method of irradiating the laser beam R with the irradiator 161 may be selected. Further, the suction port 172 of the suction nozzle 171 is disposed in the vicinity of the tip of the collection needle 141 or in the vicinity of the irradiation position of the laser beam R, and foreign matter is removed from the wafer W by electrostatic force of the collection needle 141 or irradiation of the laser beam R. If released from the device, the released foreign matter may be sucked by the suction nozzle 171 and discharged from the apparatus. If it does so, it can prevent that a foreign material adheres to the wafer W again.

  Note that which of the different types of foreign matter removers, such as the collection needle 141, the laser beam irradiator 161, and the suction nozzle 171, is used to remove the foreign matter on the wafer W is determined by, for example, the defect map in the control unit 150. It is good also as a structure judged based on the information of the kind of obtained removal target object.

  Further, a plurality of different types of foreign substance removers provided in the foreign substance removing apparatus may be individually movable in the X direction and the Y direction within a substantially horizontal plane. By doing so, the position of each foreign substance remover relative to the foreign substance can be adjusted individually, and foreign substance removal by each foreign substance remover can be performed in parallel. In this case, foreign matter removal can be performed more efficiently in a short time. For example, while adjusting the position of the collection needle 141 to remove foreign matter by electrostatic force, the position of the laser beam irradiator 161 is adjusted with respect to other foreign matters, and foreign matter removal by the laser beam R is performed in parallel. Anyway.

  In the above embodiment, the defect inspection apparatus 21 and the foreign substance removal apparatus 22 are separate apparatuses (units), and after the defect inspection apparatus 21 inspects the defect of the wafer W, the defect inspection apparatus 21 and the foreign substance removal apparatus 22 are transported to the foreign substance removal apparatus 22 For example, the defect inspection device 22 is provided with a defect inspection mechanism, or the defect inspection device 21 is provided with a foreign substance remover. Removal may be performed. By doing so, it is possible to omit the trouble of transporting the wafer W, and to perform defect inspection and foreign matter removal continuously, which is efficient.

  In the above embodiment, the defect map is sent from the image processing unit 125 of the defect inspection apparatus 21 to the control unit 150 of the foreign substance removal apparatus 22, and the control unit 150 reads the position information of the object to be removed from the defect map. However, the functions of the image processing unit 125 and the control unit 150 are not limited to such forms. For example, the image processing unit 125 may create a defect map including position information of only the removal target, that is, a removal target map, and transmit the removal target map to the control unit 150. In this case, the function of the control unit 150 can be simplified.

  The above embodiment shows an example of the present invention, and the present invention is not limited to these examples and can take various forms. For example, the type and number of measuring devices and inspection devices in the inspection station 3 in the above embodiment can be arbitrarily selected. Further, the order of processing, measurement, and inspection of the wafer W is not limited to that shown in the embodiment. Further, the foreign matter removing apparatus according to the present invention is not limited to the one provided in the coating and developing treatment system 1, and may be provided in another processing system, for example, a wafer regeneration processing system. In the above embodiment, the coating and developing processing system 1 for processing the wafer W is used. However, the present invention is applicable to other substrates such as an FPD (flat panel display) substrate, a mask substrate, and a reticle substrate. It can also be applied to substrates.

  The present invention is useful when removing foreign substances from a substrate.

It is a top view which shows the outline of a structure of a coating-development processing system. FIG. 2 is a front view of the coating and developing treatment system of FIG. 1. FIG. 2 is a rear view of the coating and developing treatment system of FIG. 1. It is explanatory drawing which shows the outline of a structure of a defect inspection apparatus. It is explanatory drawing of the longitudinal cross-section which shows the outline of a structure of a foreign material removal apparatus. It is explanatory drawing explaining the mode of the surface vicinity of a wafer. It is explanatory drawing of embodiment provided with the laser beam irradiation device. It is explanatory drawing of embodiment provided with the suction nozzle.

Explanation of symbols

W wafer 1 coating and developing treatment system 21 defect inspection device 22 foreign matter removing device 140 mounting table 141 collecting needle 150 control unit

Claims (14)

A support for supporting the substrate;
A foreign matter remover that removes foreign matter from the substrate;
And a control unit for controlling the position of the foreign substance remover relative to the foreign substance based on the positional information of the foreign substance obtained by the foreign substance inspection mechanism for performing the foreign substance inspection on the substrate. Removal device. The foreign matter removing apparatus according to claim 1, wherein the foreign matter remover is a collecting member that collects foreign matter by electrostatic force. The foreign matter removing apparatus according to claim 1, wherein the foreign matter removing device is a laser beam irradiator that irradiates the foreign matter with laser light. The foreign matter removing apparatus according to claim 1, wherein the foreign matter removing device is a suction nozzle that sucks foreign matter. The foreign matter removing apparatus according to claim 1, comprising two or more different types of foreign matter removers. The control unit is configured to determine which one of the two or more different types of foreign matter removers is used to remove foreign matter based on the foreign matter type information obtained by the foreign matter inspection mechanism. The foreign matter removing apparatus according to claim 5. 7. The foreign matter removing apparatus according to claim 1, wherein the foreign matter inspection mechanism is a macro defect inspection mechanism that performs a macro defect inspection. A substrate processing apparatus for processing a substrate;
A foreign matter inspection apparatus having a foreign matter inspection mechanism for performing foreign matter inspection on a substrate;
A foreign matter removing device according to any one of claims 1 to 7,
A processing system comprising: a substrate transfer device for transferring a substrate between the substrate processing device, the particle inspection device, and the particle removing device. Perform foreign matter inspection on the board,
Based on the position information of the foreign matter existing on the surface of the substrate obtained by the foreign matter inspection, the position of the foreign matter remover with respect to the foreign matter is adjusted,
A foreign matter removing method, wherein foreign matter is removed from a substrate by the foreign matter remover. The foreign matter removing method according to claim 9, wherein the foreign matter is removed from the substrate by collecting the foreign matter by electrostatic force. The foreign matter removing method according to claim 9 or 10, wherein the foreign matter is removed from the substrate by irradiating the foreign matter with laser light. The foreign matter removing method according to claim 9, wherein the foreign matter is removed from the substrate by sucking the foreign matter. The method according to any one of claims 9 and 10, wherein according to the type of foreign matter, one of a method for collecting the foreign matter by electrostatic force, a method for irradiating the foreign matter with laser light, and a method for sucking the foreign matter are selected. The foreign matter removing method according to 11 or 12. 14. The foreign matter removing apparatus according to claim 7, wherein the foreign matter inspection is a macro defect inspection.

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