JP2003231993A - Method, apparatus, and system for electrolytic plating - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for electrolytic plating, which can easily plate a seed layer, an electrolytic plating apparatus, and an electrolytic plating system. <P>SOLUTION: The electrolytic plating system 1 comprises an ozone gas introduction system 44, a dry cleaning device DW provided with an ultraviolet- generating section 65, and an electrolytic plating apparatus M for passing an electric current to a wafer W and plating it. The dry cleaning device DW removes an organic substance adhering to the seed layer 58 of the wafer W with ozone and ultraviolet ray, and subsequently the electrolytic plating apparatus M plates the seed layer 58. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electrolytic plating method for plating a substrate such as a semiconductor wafer, an electrolytic plating apparatus,
And an electroplating system.

[0002]

2. Description of the Related Art In recent years, due to improvement in integration of semiconductor devices, miniaturization of wirings forming the semiconductor devices has been advanced. Along with this, processing techniques for fine wiring and ensuring reliability have become important issues. As one of means for solving this problem, an embedded wiring method in which a wiring is formed by burying metal in a groove or a connection hole formed in a semiconductor wafer (hereinafter, simply referred to as “wafer”) has attracted attention.

As an apparatus capable of executing such an embedded wiring method, an electrolytic plating apparatus is known in which a metal is embedded in a groove or a connection hole formed in a wafer by electrolytic plating.

The electroplating apparatus usually has a cleaning device for cleaning the plating forming surface with pure water or a chemical solution after plating the wafer, and a cleaning device for cleaning the plating forming surface of the wafer W and then drying the wafer. It is often used by being incorporated in an electroplating system equipped with a drying device.

[0005]

By the way, in order to perform plating by the electrolytic plating apparatus, it is necessary to previously form a seed layer on the wafer in order to pass an electric current through the wafer. Since this seed layer is formed under reduced pressure, it is formed by a system different from the electrolytic plating system.

Therefore, in order to plate a wafer by the electroplating apparatus in the electroplating system as described above, the wafer must be automatically or manually transported to the electroplating system after the seed layer is formed. .

However, when the wafer is transferred, the air in the clean room comes into contact with the wafer. Further, when the wafer is manually transferred, the carrier may touch the wafer. As a result, organic substances such as dust and oil adhere to the seed layer formed on the wafer. And
If the wafer is plated as it is, the plating is repelled by the organic matter, and there is a problem that it is difficult to form the plating on the seed layer.

The present invention has been made to solve the above conventional problems. That is, an object of the present invention is to provide an electroplating method, an electroplating apparatus, and an electroplating system that can easily perform plating on a seed layer.

[0009]

According to the electrolytic plating method of the present invention, a seed layer forming step of forming a seed layer on the surface and the opening surface of a substrate having an opening, and a substrate having the seed layer formed thereon are dry-cleaned. And a electrolytic cleaning step of applying a current to the seed layer to plate the seed layer while the dry-cleaned substrate is in contact with the plating solution.

(Regarding the seed layer forming step) As the substrate, for example, a wafer or an LCD glass substrate can be used. The opening may be a groove, a hole, or a through hole. Specifically, for example, a wiring groove, a contact hole, and a via hole can be cited.

The seed film is for passing a current through the substrate. The seed film is preferably made of the same material as the plating. For example, when copper plating is applied, it is preferable that the seed film is made of copper.

(Regarding Dry Cleaning Step) Dry cleaning is cleaning that does not use a cleaning liquid such as pure water or a chemical solution. Examples of the dry cleaning include cleaning with a gaseous active atom or molecule, cleaning with a laser, and cleaning with an inert atom such as helium and argon. Here, the active atom or molecule is an atom or molecule that is in a state where it is remarkably more likely to undergo a chemical reaction than an atom or molecule that is activated and is in a ground state. Examples of such atoms or molecules include active oxygen. Examples of active oxygen include oxygen radicals,
Hydroxyl radicals may be mentioned.

The dry cleaning step may be carried out either for cleaning the substrates one by one or for cleaning a plurality of substrates.

(Regarding Electrolytic Plating Step) As the plating applied by electrolytic plating, for example, any one of copper, silver, gold, and platinum or alloys thereof can be mentioned. The electrolytic plating process is performed in a state where the substrate is not treated with the liquid after the dry cleaning process. That is, the substrate is not treated with the liquid between the dry cleaning step and the electrolytic plating step.

The electrolytic plating step may be performed either by plating the substrate one by one or by plating a plurality of substrates.

Since the liquid processing method according to the first aspect includes a dry cleaning step of dry cleaning the substrate having the seed layer formed thereon, it is possible to remove the organic substances adhering to the seed layer of the substrate, and to easily perform the seed treatment. Plates can be plated. Further, since the substrate is cleaned by dry cleaning, the cleaning liquid does not enter the opening. As a result, there is no need to perform a drying process between the dry cleaning process and the electroplating process.

The dry cleaning step of the electrolytic plating method is
Preference is given to using active atoms or molecules. By performing the dry cleaning using active atoms or molecules, the organic substances attached to the seed layer can be removed more reliably.

The active atom or molecule used in the above electrolytic plating method is preferably active oxygen. By using active oxygen as the active atom or molecule, the organic substances attached to the seed layer can be converted into, for example, carbon dioxide gas and water vapor and removed.

The active oxygen used in the above electroplating method is generated, for example, by irradiating the atmosphere or processing gas with ultraviolet rays. Examples of the processing gas include a gas containing oxygen atoms. Examples of the gas containing oxygen atoms include ozone gas, hydrogen peroxide gas, water vapor, nitrogen dioxide gas, and oxygen gas. Damage to the seed layer can be prevented by generating active oxygen by irradiating the atmosphere or processing gas with ultraviolet rays.

The active oxygen used in the above electroplating method is generated by plasma, for example. Examples of the processing gas for generating plasma include a gas containing oxygen atoms. Examples of the gas containing oxygen atoms include ozone gas, hydrogen peroxide gas, water vapor, nitrogen dioxide gas, and oxygen gas. By generating active oxygen by plasma, the time required for dry cleaning can be shortened.

The electrolytic plating apparatus of the present invention includes a plating solution tank for storing a plating solution, a holder for holding a substrate having an opening and a seed layer formed on the surface thereof, and a substrate held by the holder. And a second electrode to which a voltage is applied between the first electrode and the first electrode, and a dry cleaning unit for dry cleaning the substrate.

Since the electrolytic plating apparatus of the present invention is provided with the dry cleaning section for dry cleaning the substrate, organic substances adhering to the seed layer of the substrate can be removed, and plating can be easily performed on the seed layer. You can Further, since the substrate is cleaned by dry cleaning, the cleaning liquid does not enter the opening. As a result, there is no need to dry the substrate between dry cleaning and electroplating. Further, since electrolytic plating and dry cleaning can be performed by one electrolytic plating apparatus, cost reduction can be achieved.

It is preferable that the dry cleaning unit of the electrolytic plating apparatus is provided with an active oxygen generating means for generating active oxygen. Any means may be used as the active oxygen generating means as long as it can generate active oxygen. By providing the active oxygen generating means, the organic substances attached to the seed layer can be removed by changing them to, for example, carbon dioxide gas and water vapor.

The dry cleaning unit of the above electroplating apparatus is characterized in that the dry cleaning unit further includes a processing chamber, and the active oxygen generating means generates active oxygen in the processing chamber. By further providing a processing chamber and generating the active oxygen in the processing chamber, the density of the active oxygen can be increased, and the organic substances attached to the seed layer can be efficiently removed.

The active oxygen generating means of the above electroplating apparatus is provided with, for example, an ultraviolet ray generating section for generating ultraviolet rays. The ultraviolet ray generator is not particularly limited as long as it can generate ultraviolet rays. An example of such an ultraviolet ray generation unit is a mercury-filled lamp. By providing the ultraviolet ray generating portion, the structure of the dry cleaning portion can be simplified and damage to the seed layer can be prevented.

The active oxygen generating means of the above electroplating apparatus is provided with, for example, a plasma generating section for generating plasma. The plasma generator is not particularly limited as long as it can generate plasma. Examples of such a plasma generator include those that generate direct current discharge, low frequency discharge, high frequency discharge, ECR discharge, helicon wave excited discharge, or inductively coupled discharge. By providing the plasma generator, the time required for dry cleaning can be shortened.

The above electroplating apparatus further includes a housing that contains a plating solution tank and a holder and has a transfer section for transferring a substrate, and the dry cleaning section is disposed in the transfer section. preferable. By disposing the dry cleaning section in the transport section of the housing, dry cleaning can be performed when the substrate is loaded. Also, dry cleaning can be performed when the substrate is carried out.

The electrolytic plating system of the present invention comprises a dry cleaning device for dry cleaning a substrate having an opening and a seed layer formed on the surface thereof, and an electric current is applied to the seed layer of the dry cleaned substrate to seed the seed layer. And an electrolytic plating device for plating on the layer.

In addition, the electrolytic plating system may be provided with a wet cleaning device for performing wet cleaning after electrolytic plating and an annealing device for performing annealing after plating.

Since the electrolytic plating system of the present invention is provided with the dry cleaning device for dry cleaning the substrate having the opening and the seed layer formed on the surface thereof, the organic substances attached to the seed layer of the substrate are removed. Therefore, the seed layer can be easily plated. Further, since the substrate is cleaned by dry cleaning, the cleaning liquid does not enter the opening. As a result, there is no need to dry the substrate between dry cleaning and electroplating.

It is preferable that the dry cleaning apparatus for the electrolytic plating system includes a processing chamber and active oxygen generating means for generating active oxygen in the processing chamber. By providing the processing chamber and the active oxygen generating means, it is possible to change the organic substances adhering to the seed layer into, for example, carbon dioxide gas and water vapor and remove them. In addition, the density of active oxygen can be increased, and the organic substances attached to the seed layer can be efficiently removed.

The active oxygen generating means of the above electroplating system includes, for example, an ultraviolet ray generating section for generating ultraviolet rays in the processing chamber. By providing the ultraviolet ray generator, the structure of the dry cleaning device can be simplified and damage to the seed layer can be prevented.

The active oxygen generating means of the above electroplating system includes, for example, a plasma generating section for generating plasma in the processing chamber. By providing the plasma generator, the time required for dry cleaning can be shortened.

It is preferable that the electrolytic plating system further comprises an oxygen atom-containing gas introduction system for introducing a gas containing oxygen atoms into the processing chamber. By further including the oxygen atom-containing gas introduction system, active oxygen can be reliably generated.

The oxygen atom-containing gas introduction system of the above electroplating system includes ozone gas, oxygen gas, nitrogen dioxide gas,
At least one of hydrogen peroxide gas and water vapor is preferably introduced into the processing chamber. By introducing at least one gas of ozone gas, oxygen gas, nitrogen dioxide gas, hydrogen peroxide gas, and water vapor into the processing chamber by the oxygen atom-containing gas introduction system,
Active oxygen for removing organic substances can be efficiently and easily generated.

[0036]

BEST MODE FOR CARRYING OUT THE INVENTION (First Embodiment) An electrolytic plating system according to a first embodiment of the present invention will be described below. 1 to 4 are a schematic perspective view, a plan view, a front view, and a side view, respectively, of the electrolytic plating system according to the present embodiment.

As shown in FIGS. 1 to 4, the electroplating system 1 includes a carrier station 2 for carrying the wafer W between a carrier cassette C accommodating the wafer W and a process station 3 described later, and the wafer W. And a process station 3 for processing

The carrier station 2 carries the wafer W on the mounting table 21 on which the wafer W is mounted, the wafer W taken out of the carrier cassette C mounted on the mounting table 21, and the wafer W stored in the carrier cassette C. It is composed of a sub arm 22. In the carrier cassette C, a plurality of wafers W, for example, 25 wafers W are accommodated in a state of being horizontally maintained at equal intervals. For example, four carrier cassettes C are arranged on the mounting table 21 in the X direction of FIG.

The sub-arm 22 is constructed so as to move on a rail arranged in the X direction and move up and down in the Z direction. Further, the sub arm 22 is configured to rotate in a substantially horizontal plane.

The sub-arm 22 has a wafer holding member 23 which expands and contracts in a substantially horizontal plane. Wafer holding member 23
By expanding and contracting, the unplated wafer W is taken out from the carrier cassette C, and the plated wafer W is stored in the carrier cassette C. The sub-arm 22 also transfers the wafer W to and from the process station 3.

The process station 3 has a box-shaped housing 31 such as a rectangular parallelepiped or a cube. The housing 31 is formed of a corrosion resistant material, for example, a resin or a metal plate whose surface is coated with a resin. A processing space S is formed inside the housing 31. The processing space S is a rectangular parallelepiped processing chamber, and a bottom plate 32 is attached to the bottom of the processing space S.

In the processing space S, a plurality of devices for processing the wafer W are arranged. Specifically, a dry cleaning device DW and a wet cleaning device WW are arranged on the side close to the carrier station 2. Further, an electrolytic plating apparatus M and an annealing apparatus A are arranged on the side far from the carrier station 2. Further, these plural devices are respectively arranged around the main arm 33 described below.

A main arm 33 for transporting the wafer W is arranged at substantially the center of the bottom plate 32. The main arm 33 is configured to move up and down and rotate in a substantially horizontal plane.

The main arm 33 is provided with two upper and lower wafer holding members 34 that expand and contract in a substantially horizontal plane. As the wafer holding member 34 expands and contracts, the main arm 33
The wafer W is loaded and unloaded into and from each device arranged around the.

The main arm 33 has a mechanism for vertically inverting the held wafer W. Specifically, the wafer W is turned upside down while the wafer W is being transferred from one device to another device.

Housing 31 of process station 3
Of the housing 31a on the carrier station 2 side
Openable and closable openings G1 and G2 are provided at two locations. The opening G1 is used when the unplated wafer W is loaded into the process station 3. At the time of loading, the opening G1 is opened and the sub-arm 22 holding the unplated wafer W loads the wafer W into the process station 3. The sub-arm 22 mounts the wafer W on the relay mounting table 35 provided in the process station 3.

The opening G2 has a plated wafer W.
Are used to carry out from the process station 3. When carrying out, the opening G2 is opened and the sub arm 2
2 extends into the wet cleaning device WW, holds the cleaned wafer W, and transfers the wafer W from the process station 3.
Carry out.

Further, the inside of each apparatus is maintained at a negative pressure than the processing space S. Therefore, the air flows from the processing space S toward the inside of each device. The air flowing into each device is exhausted from each device to the outside of the electrolytic plating system 1.

Next, the dry cleaning device DW according to this embodiment will be described. The dry cleaning apparatus DW according to the present embodiment is a single-wafer dry cleaning apparatus DW that cleans the wafers W one by one. FIG. 5 is a schematic vertical sectional view of the dry cleaning apparatus DW according to the present embodiment, and FIG. 6 is a wafer W cleaned by the dry cleaning apparatus DW according to the present embodiment.
It is the figure which showed typically.

As shown in FIG. 5, the dry cleaning apparatus DW according to the present embodiment includes a processing chamber 41 formed of, for example, a corrosion resistant material, specifically, a resin or a metal plate whose surface is coated with a resin. I have it.

A shower head 42 for introducing ozone gas (processing gas) toward the wafer W is provided on the ceiling of the processing chamber 41 so as to face a susceptor 54, which will be described later. The shower head 42 is formed of an ultraviolet ray transmitting material such as quartz that transmits ultraviolet rays.

The shower head 42 has a hollow structure, and a plurality of discharge holes 43 are formed in the lower portion of the shower head 42. By forming the plurality of discharge holes 43, the ozone gas introduced into the shower head 42 is discharged into the space between the lower surface of the shower head 42 and a susceptor 54 described later.

An ozone gas introduction system 44 (oxygen-containing gas introduction system) for introducing ozone gas into the processing chamber 41 via the shower head 42 is connected to the shower head 42. The ozone gas introduction system 44 mainly has a valve, and a tank 45 containing a source gas serving as a source of ozone gas, an ozone generator 46 for generating ozone gas from the source gas, and a mass flow for adjusting the flow rate of ozone gas. The shower head 42 via the controller 47, the ozone generator 46, and the mass flow controller 47.
And an ozone gas introduction pipe 48 that connects the tank 45 to the tank 45.

By opening the valve of the tank 45, the source gas is introduced into the ozone generator 46, and ozone gas is generated. Then, after the flow rate of the generated ozone gas is controlled by the mass flow controller 47, the ozone gas is introduced into the processing chamber 41 via the ozone gas introduction pipe 48 and the shower head 42.

Here, the source gas according to the present embodiment is mainly composed of oxygen gas, but in order to efficiently generate ozone gas, an additive gas such as nitrogen gas or a mixture of nitrogen gas and hydrogen gas is used. Gas may be added.

A vacuum exhaust system 49 for vacuum exhausting the inside of the processing chamber 41 is connected to the bottom of the processing chamber 41. The vacuum exhaust system 49 mainly includes a vacuum pump 50 such as a turbo molecular pump and a dry pump, and a vacuum pump 50.
And an exhaust pipe 51 that connects the processing chamber 41 with the processing chamber 41. By operating the vacuum pump 50 during the dry cleaning, the probability that the oxygen radicals, which will be described later, collide with other gas atoms or gas molecules is reduced, and the cleaning speed is increased.

An opening is provided in the side wall of the processing chamber 41, and a gate valve 52 for loading / unloading the wafer W is arranged in this opening. A purge gas supply system 53 that supplies a purge gas such as nitrogen gas is connected to the sidewall of the processing chamber 41.

Shower head 42 in processing chamber 41
A substantially disk-shaped susceptor 54 on which the wafer W is placed is disposed at a position facing the. The susceptor 54 is formed of an insulating material such as aluminum nitride, silicon nitride, or aluminum oxide.

Here, an interlayer insulating film 55 is formed on the wafer W placed on the susceptor 54 as shown in FIG. 6, and a via hole 56 is formed in the interlayer insulating film 55. A barrier layer 57 is formed on the surface of the interlayer insulating film 55, and a seed layer 58 is formed on the barrier layer 57. The seed layer 58 is, for example, a physical vapor deposition apparatus (PV) (not shown) disposed in another processing system.
D device).

A motor 59 for rotating the susceptor 54 is connected to the susceptor 54. By driving the motor 59, the susceptor 54 rotates during the dry cleaning, so that the organic substances attached to the seed layer 58 of the wafer W are uniformly removed.

Inside the susceptor 54, a resistance heating element 60 for heating the susceptor 54 is arranged. Resistance heating element 6
0 is connected to an external power source 61 arranged outside the processing chamber 41 via a lead wire.

Lifter holes are formed in the susceptor 54 at three places, for example, so as to penetrate in the vertical direction, and lifter pins 62 that can move up and down are provided in these lifter holes. The lifter pins 62 are moved up and down by an elevating device (not shown) so that the wafer W is placed on the susceptor 54 or separated from the susceptor 54.

The lifter pin 62 is the processing chamber 41.
However, since the bellows 63 made of a metal that can expand and contract is disposed at the bottom of the processing chamber 41, the airtightness inside the processing chamber 41 is maintained.

A circular opening is formed in the ceiling of the processing chamber 41. In the vicinity of this opening, a transmission window 64 made of an ultraviolet ray transmitting material such as quartz that transmits ultraviolet rays is provided. A seal member such as an O-ring (not shown) that maintains airtightness inside the processing chamber 41 is interposed between the transmission window 64 and the processing chamber 41.

Above the transmissive window 64, an ultraviolet ray generator 65 for generating ultraviolet rays is arranged. UV generator 6
5 is a substantially spherical mercury-containing lamp 6 in which mercury gas is enclosed.
6 is provided. The ultraviolet rays generated from the mercury-encapsulated lamp 66 have a wavelength that excites ozone gas to generate active oxygen and a wavelength that cuts molecular bonds of organic substances attached to the seed layer 58. Specifically, for example, it is an ultraviolet ray having a wavelength near 185 nm and a wavelength near 254 nm.

Unlike the ordinary cold cathode lamp that emits ultraviolet rays, the mercury-filled lamp 66 can introduce a large amount of electric power to generate a large amount of ultraviolet rays and can increase the cleaning speed.

A microwave generation mechanism 67 for generating a microwave is connected to the mercury-filled lamp 66 via a waveguide 68. The microwave generation mechanism 67 is for generating a microwave of 2.45 GHz, for example.
By generating microwaves from the microwave generation mechanism 67, the microwaves are transmitted to the mercury-containing lamp 66 via the waveguide 68, and the mercury-containing lamp 66 emits ultraviolet rays.

The ultraviolet rays generated from the mercury-containing lamp 66 are reflected on the upper portion of the mercury-containing lamp 66 to generate the susceptor 5.
4 is provided with a reflection plate 69 that leads to the upper surface.

Next, the electrolytic plating apparatus M according to this embodiment will be described. 7 is a vertical sectional view including a partially enlarged view schematically showing the electroplating apparatus M according to the present embodiment, and FIG. 8 is a schematic plan view of the electroplating apparatus according to the first embodiment. It is a figure.

As shown in FIGS. 7 and 8, the electroplating apparatus M includes a housing 71 formed of a corrosion resistant material such as resin. The inside of the housing 71 is
It is divided into a first processing section A located at a lower stage, that is, a second processing section B located at an upper stage.

Inside the first processing section A, the plating solution tank 7 is provided.
2 (treatment liquid tank) is provided. The plating liquid tank 72 is
Inner tank 72a and outer tank 72 arranged outside the inner tank 72a
b and.

The inner tank 72a is formed in a substantially cylindrical shape having an open top and a closed bottom. A jet pipe 73 for jetting the plating solution from the bottom surface of the inner tank 72a to the upper surface projects inside the inner tank 72a.

A disk-shaped anode electrode 74 (second electrode) is arranged around the ejection pipe 73. Spout pipe 73
A diaphragm 75 for partitioning the inner tank 72a into upper and lower parts is provided above the anode electrode 74 between the outer circumference of the end of the inner tank 72a and the inner tank 72a.

The diaphragm 75 is permeable to ions but impermeable to impurities generated when the anode electrode 74 is dissolved and bubbles such as oxygen and hydrogen generated during plating.

The plating liquid is supplied from the jet pipe 73 to the upper region of the inner tank 72a partitioned by the diaphragm 75.
The plating solution is supplied from a circulation pipe 76 described below to the lower region of the inner tank 72a partitioned by.

Circulation pipes 76, 77 are provided at the bottom of the inner tank 72a.
Is connected, and a pump (not shown) is arranged between the circulation pipes 76 and 77. By operating this pump, the plating solution circulates between the circulation pipe 76 and the circulation pipe 77.

Like the inner tank 72a, the outer tank 72b is formed in a substantially cylindrical shape having an open upper surface and a closed bottom surface. A pipe 78 for discharging the plating solution overflowing from the inner bath 72a and flowing into the outer bath 72b from the outer bath 72b is connected to the bottom of the outer bath 72b. Piping 78
A pump 7 for supplying the plating liquid discharged from the outer tank 72b to the upper region of the inner tank 72a again between the discharge tube 73 and the ejection pipe 73.
9 are provided.

In the second processing section B, a driver 81 for holding the wafer W is arranged above the plating solution tank 72. The driver 81 includes a holder 82 that holds the wafer W.
And a motor 83 for rotating the wafer W together with the holder 82.
It consists of and.

The holder 82 is formed in a substantially cylindrical shape having a substantially circular opening on the bottom surface. As shown in a partially enlarged view in FIG. 7, the opening edge portion inside the holder 82 is, for example, 12
A hemispherical contact 84 (first electrode) for applying a voltage to the wafer W is arranged at positions equally divided into eight.

The contact 84 is electrically connected to an external power source (not shown) via a lead wire. The seed layer 58 contacts the contact 84. Therefore, the voltage applied to the contact 84 is also applied to the seed layer 58.

A seal member 85 is provided at the opening edge portion inside the holder 82. When holding the wafer W,
The seal member 85 is pressed via the wafer W. The pressing of the seal member 85 prevents the plating solution from entering the inside of the holder 82.

A lifting mechanism 86 for lifting the driver 81 with respect to the plating solution bath 72 is attached to the motor 83. The elevating mechanism 86 mainly includes a support beam 87 that is attached to the motor 83 and that supports the driver 81, and a guide rail 88 that is attached to the inner wall of the housing 71.
It is composed of a vertically movable cylinder 89 that raises and lowers the support beam 87 along the guide rail 88. When the cylinder 89 is driven, the driver 3 supported by the support beam 87 moves up and down along the guide rail 34, and the wafer W moves up and down.

Specifically, the lift mechanism 86 moves the wafer W to the transfer position (I) for transfer and the wafer cleaning for cleaning the plating applied to the wafer W with a cleaning liquid such as pure water. A position (II), a contact cleaning position (III) for cleaning the contact 84 with a cleaning liquid such as pure water, and a spin dry position (IV) for performing spin dry to remove excess plating liquid and water. , Stop at a position different in height from the plating position (V) for plating the wafer W. The transfer position (I), the wafer cleaning position (II), and the contact cleaning position (III) are
The inner tank 72a of the plating solution tank 4 is above the level of the plating solution when the plating solution is filled, and the spin dry position (I
V) and the plating position (V) are below the liquid surface of the plating liquid.

A separator 92 containing a cleaning nozzle 90 and an exhaust port 91 is disposed between the first processing section A and the second processing section B. In the center of the separator 92,
Through holes are provided so that the wafer W held by the driver 81 can move back and forth between the first processing unit A and the second processing unit B. A gate valve 93 for loading / unloading the wafer W into / from the electrolytic plating apparatus M is provided in the housing 71 at the boundary between the first processing section A and the second processing section B.

Next, the seed layer forming process and the process performed in the electrolytic plating system 1 will be described. FIG. 9 is a flowchart showing the flow of the seed layer forming process and the process performed in the electrolytic plating system 1 according to this embodiment.

As shown in FIG. 9, first, a seed layer 58 is formed on the wafer W by a PVD apparatus arranged in a system different from the electrolytic plating system 1 (step 1).

After the seed layer 58 is formed on the wafer W,
One lot, for example, 25 wafers W are stored in the carrier cassette C, and the carrier cassette C is automatically or manually transferred to the electrolytic plating system 1 (step 2).
Here, due to this transportation, organic substances such as dust and oil may adhere to the seed layer 58.

The carrier cassette C transported to the electrolytic plating system 1 is placed on the mounting table 21. When the carrier cassette C is mounted on the mounting table 21, the sub arm 22
Moves to the front of the carrier cassette C, the wafer holding member 23 extends, and the wafer W is taken out of the carrier cassette C.

Thereafter, the sub-arm 22 rotates and the wafer holding member 23 holding the wafer W extends,
The wafer W is mounted on the relay mounting table 35 through the opening G1. When the wafer W is placed on the relay mounting table 35, the wafer holding member 34 extends and receives the wafer W on the relay mounting table 35.

After the wafer holding member 34 receives the wafer W, the main arm 33 turns the wafer W upside down and rotates to carry the wafer W into the dry cleaning apparatus DW. When the wafer W is loaded into the dry cleaning device DW, dry cleaning is started (step 3).

The dry cleaning carried out in the dry cleaning device DW will be described below with reference to FIGS. FIG. 10 is a flowchart showing the flow of the dry cleaning process according to this embodiment, and FIGS.
(B) is the figure which showed typically the dry cleaning process which concerns on this Embodiment.

First, a voltage is applied to the resistance heating element 60 built in the susceptor 54, and as shown in FIG.
The susceptor 54 is heated to a predetermined temperature (step 3 (1
a)).

After the susceptor 54 is heated to a predetermined temperature, an elevating device (not shown) is driven to lift the lifter pin 62 as shown in FIG. 11B (step 3 (2
a)).

After the lifter pin 62 is lifted, the gate valve 52 is opened, the wafer holding member 34 is extended, and the wafer W having the organic matter attached to the seed layer 58 is carried into the processing chamber 41. The wafer W carried into the processing chamber 41 is placed on the lifter pins 62 which have been raised as shown in FIG. 11C due to the contraction of the wafer holding member 34 (step 3 (3a)).

After the wafer W is placed on the lifter pins 62, as shown in FIG. 11D, the lifter pins 62 are lowered by the driving of an elevating device (not shown), and the wafer W is placed on the susceptor 54 ( Step 3 (4a)).

After the wafer W is placed on the susceptor 54,
Vacuum pump 50 with gate valve 52 closed
Operates to bring the inside of the processing chamber 41 into a vacuum state as shown in FIG. 12 (a) (step 3 (5a)).

Then, while maintaining the vacuum state, as shown in FIG.
As shown in (b), ozone gas is passed through the shower head 42.
Introduced into the chamber, ultraviolet rays are generated from the mercury-containing lamp 66, and dry cleaning is performed (step 3 (6
a)). The dry cleaning is performed while rotating the susceptor 54.

The removal of organic substances by dry cleaning will be described below. First, 1 generated from the mercury-sealed lamp 66
Ultraviolet rays having wavelengths near 85 nm and 254 nm break the molecular bonds of organic substances attached to the seed layer 58, for example, carbon-carbon bonds and carbon-hydrogen bonds. Also,
When the ozone gas in the shower head 42 is irradiated with ultraviolet rays, the ozone gas absorbs the ultraviolet rays and excites them. The excited ozone gas is decomposed by ultraviolet rays having a wavelength of around 254 nm to become oxygen radicals (active oxygen). And
This oxygen radical reacts with an organic substance whose molecular bond is broken, and decomposes the organic substance into, for example, carbon dioxide gas and water vapor. Based on such a principle, the organic substances attached to the seed layer 58 are removed from the seed layer 58.

After the organic substances are sufficiently removed from the seed layer 58, as shown in FIG. 12C, the introduction of ozone gas is stopped and the generation of ultraviolet rays from the mercury-containing lamp 66 is stopped, and the dry cleaning is performed. To finish. At this time, the rotation of the susceptor 54 is also stopped (step 3
(7a)).

After the introduction of ozone gas and the generation of ultraviolet rays are stopped, as shown in FIG.
Is stopped, the purge gas is supplied into the processing chamber 41 by the purge supply system 51, and the pressure in the processing chamber 41 is returned to the atmospheric pressure (step 3 (8
a)).

After the pressure in the processing chamber 41 is returned to the atmospheric pressure, the lifter pin 62 is raised by the driving of an elevating device (not shown), and as shown in FIG.
Is separated from the susceptor 54 (step 3 (9
a)).

After the wafer W is separated from the susceptor 54,
The gate valve 52 opens and the wafer holding member 34 extends to hold the wafer W that has been dry-cleaned. Thereafter, the wafer holding member 34 is retracted, and the wafer W that has been dry-cleaned is dried as shown in FIG. 13B.
Carry out from W (step 3 (10a)).

After the wafer W that has been dry-cleaned is carried out from the dry-cleaning unit DW, the wafer holding member 34 that holds the wafer W rotates, and the wafer W is electroplated M.
Bring it in. When the dry-cleaned wafer W is loaded into the electrolytic plating apparatus M, electrolytic plating is started (step 4).

The electroplating performed in the electroplating apparatus M will be described below with reference to FIGS. 14 and 15. FIG. 14 is a flowchart showing the flow of the plating process according to this embodiment, and FIG. 15 is a diagram schematically showing the plated wafer W according to this embodiment. Seed layer 5 dry-cleaned by the flow shown in FIG.
8 is plated (Step 4 (1) to Step 4
(15)). The seed layer 58 is plated 94 until the state shown in FIG. 15 is reached.

In this embodiment, after dry cleaning,
Since the plating is performed, the repulsion of the plating due to the organic substance can be reduced, and the seed layer 58 can be easily plated.

Further, the organic matter attached to the seed layer 58 is
Since the cleaning liquid is removed by dry cleaning without using the cleaning liquid, the cleaning liquid does not enter the via hole 57 where the liquid does not easily escape. Therefore, it is not necessary to dry the wafer W before electrolytic plating, and the processing time performed in the electrolytic plating system 1 can be shortened.

Further, by removing the organic substances adhering to the seed layer 58, the adhesion between the seed layer 58 and the plating is enhanced, so that the plating 94 can be prevented from peeling from the seed layer 58.

Further, in the present embodiment, since ozone gas is irradiated with ultraviolet rays to generate oxygen radicals,
It is possible to prevent damage to the seed layer 58 during dry cleaning,
It can be plated uniformly. Also, the seed layer 58
Can also be modified. As a result, it becomes easier to plate the seed layer 58.

Subsequently, after the wafer W is unloaded from the electrolytic plating apparatus M, the wafer holding member 34 rotates to load the wafer W into the wet cleaning apparatus WW. Then, wet cleaning is performed in the wet cleaning device WW (step 5).

After the wet cleaning is completed, the wafer W is loaded into the annealing apparatus A and annealed (step 6).

After the annealing is completed, the wafer holding member 34 receives the wafer W again, and transfers the wafer W to the wafer holding member 23 via the wet cleaning device WW. Next, the wafer holding member 23 extends and returns the annealed wafer W into the carrier cassette C. After that, the carrier cassette C is transported from the electroplating system 1 to another system that performs subsequent processing (step 7).

(Second Embodiment) The second embodiment of the present invention will be described below.
The embodiment will be described. Note that, in the following, among the embodiments after this embodiment, the description of the contents overlapping with the preceding embodiment may be omitted.

In this embodiment, an example will be described in which plasma is generated in the processing chamber of the dry cleaning apparatus and active oxygen is generated from this plasma. FIG. 16 is a schematic vertical sectional view of the dry cleaning apparatus according to this embodiment.

As shown in FIG. 16, a dry cleaning device DW
A plasma generating unit 101 (active oxygen generating means) for generating active oxygen is provided in the processing chamber 41.

The plasma generating part 101 is equipped with a shower head 102 which acts as an upper electrode. The shower head 102 is formed of a conductive material such as alumite-treated aluminum or surface-treated stainless steel. A lower electrode 103 made of a conductive material such as aluminum or stainless steel is provided inside the susceptor 54.

Shower head 102 and lower electrode 103
High-frequency power supplies 104 and 105 for forming an electric field between the shower head 102 and the lower electrode are connected to the via head via a lead wire. Oxygen plasma is generated by applying a voltage between the shower head 102 and the lower electrode 103 using the high frequency power supplies 104 and 105 in a state where ozone gas is introduced into the processing chamber 41.

Dry cleaning performed in the dry cleaning device DW will be described below with reference to FIGS. 17 and 18.
FIG. 17 is a flowchart showing the flow of the dry cleaning process according to the present embodiment, and FIGS.
(B) is the figure which showed typically the dry cleaning process which concerns on this Embodiment.

First, a voltage is applied to the resistance heating element 60 arranged in the susceptor 54 to bring it to a predetermined temperature.
Is heated, and the lifter pin 62 is raised by driving an elevator device (not shown) (step 3 (1b), step 3 (2b)).

After the lifter pins 62 are raised, the wafer W is loaded into the processing chamber 41, and the wafer W is placed on the lifter pins 62 (step 3 (3b)).

After the wafer W is placed on the lifter pins 62, the lifter pins 62 are lowered by driving an elevating device (not shown), and the wafer W is placed on the susceptor 54. Further, the vacuum pump 50 is operated to bring the inside of the processing chamber 41 into a vacuum state (step 3 (4b), step 3 (5)).
b)).

Then, while maintaining the vacuum state, as shown in FIG.
As shown in (a), the shower head 10 is supplied with ozone gas.
In addition to introducing into No. 2, a voltage is applied between the shower head 102 and the lower electrode 103 to perform dry cleaning (step 3 (6b)).

The removal of organic substances by dry cleaning will be described below. When a voltage is applied between the shower head 102 and the lower electrode 103, electrons are emitted from the cathode and the emitted electrons are accelerated by the electric field and collide with ozone gas. When the accelerated electrons collide with ozone gas, the ozone gas is ionized and becomes oxygen plasma. Further, the oxygen radicals are generated by the collision of the oxygen plasma with the oxygen gas. Since the oxygen radicals thus generated are highly reactive, the seed layer 58
The organic substances attached to the are decomposed into, for example, carbon dioxide gas and water vapor, and the organic substances are separated from the seed layer 58. Organic matter is removed from the seed layer 58 based on this principle.

After the organic substances are sufficiently removed from the wafer W, as shown in FIG. 18B, the introduction of ozone gas and the application of voltage are stopped, and the dry cleaning is completed (step 3 (7b)).

After the dry cleaning is completed, the vacuum pump 50
And the purge supply system 51 supplies a purge gas into the processing chamber 41 to return the inside of the processing chamber 101 to the atmospheric pressure (step 3 (8b)).

After the inside of the processing chamber 41 is returned to the atmospheric pressure, the lifter pins 62 are lifted by the driving of the lifting device (not shown), and the wafer W is separated from the susceptor 54. afterwards,
The wafer W that has been dry-cleaned is unloaded from the dry-cleaning device DW (step 3 (9b), (step 3 (10
b)).

In this embodiment, since oxygen radicals are generated from oxygen plasma, the processing speed of dry cleaning can be increased and the time required for dry cleaning can be shortened.

(Third Embodiment) The third embodiment of the present invention will be described below.
The embodiment will be described. In the present embodiment, an example will be described in which a dry cleaning unit that performs dry cleaning with ultraviolet rays is provided in an electrolytic plating apparatus. FIG. 19 is a schematic vertical sectional view of the electrolytic plating apparatus according to this embodiment.

As shown in FIG. 19, electrolytic plating apparatus M
Includes a dry cleaning unit 110 that dry-cleans the wafer W with ultraviolet rays. The dry cleaning section 110 is connected to the housing 71 via a gate valve 93.
The dry cleaning unit 110 is configured almost the same as the dry cleaning apparatus DW of the first embodiment. However, in this embodiment, the susceptor 54 is not provided.

Hereinafter, dry cleaning and electrolytic plating performed in the electrolytic plating apparatus M having the dry cleaning unit 110 will be described with reference to FIGS. FIG. 20 is a flowchart showing a flow of the dry cleaning process according to the present embodiment, and FIGS. 21A to 22C are diagrams schematically showing the dry cleaning process according to the present embodiment. is there.

First, the gate valve 52 of the dry cleaning section 110 is opened, the wafer holding member 34 holding the wafer W is extended, and the wafer W is carried into the processing chamber 41 as shown in FIG. Step 3 (1c)).

After the wafer W is loaded into the processing chamber 41, the wafer holding member 34 stops in the processing chamber 41 as shown in FIG. 21B (step 3 (2
c)).

After the wafer holding member 34 stops in the processing chamber 41, as shown in FIG. 21C, the gate valve 52 is closed in that state and the vacuum pump 5
0 operates to bring the inside of the processing chamber 41 into a vacuum state (step 3 (3c)).

Then, while maintaining the vacuum state, as shown in FIG.
As shown in (d), the shower head 42 is supplied with ozone gas.
And the wafer W is irradiated with ultraviolet rays to perform dry cleaning (step 3 (4c)).

After the organic substances are sufficiently removed from the wafer W, as shown in FIG. 22A, the introduction of ozone gas and the irradiation of ultraviolet rays are stopped, and the dry cleaning is completed (step 3 (5c)).

After the dry cleaning is completed, as shown in FIG. 22B, the operation of the vacuum pump 50 is stopped, the purge gas is supplied, and the inside of the processing chamber 41 is returned to the atmospheric pressure (step 3 (6c)). ).

After the inside of the processing chamber 41 is returned to the atmospheric pressure, as shown in FIG. 22C, the gate valve 93 interposed between the processing chamber 41 and the housing 71 is opened and the wafer holding is stopped. The member 34 is the housing 71.
It extends to the inside (step 3 (7c)).

Then, plating is performed on the dry-cleaned seed layer 58 (step 4 (1) to step 4 (1
5)).

In this embodiment, since the dry cleaning unit 110 is provided in the electrolytic plating apparatus M, electrolytic plating and dry cleaning can be performed by one electrolytic plating apparatus M, and the cost can be reduced. it can.

In this embodiment, since the dry cleaning section 110 is arranged near the gate valve 93 of the housing 71, when the wafer W is loaded into the housing 71,
The organic matter attached to the seed layer 58 can be removed.

In this embodiment, since the processing chamber 41 and the housing 71 are connected via the gate valve 93, they are exposed to the air outside the electrolytic plating apparatus M between the dry cleaning and the electrolytic plating. Therefore, it is possible to prevent impurities such as organic substances contained in the air outside the electrolytic plating apparatus M from reattaching to the seed layer 58. Moreover, the time required for movement can be shortened.

In this embodiment, since active oxygen is generated in the processing chamber 41, the density of active oxygen can be increased, and the organic substances attached to the seed layer 58 can be efficiently removed.

In the present embodiment, since the wafer W is dry-cleaned while being held by the wafer holding member 34, the cleaning speed can be increased and the time required for the dry cleaning can be shortened.

(Fourth Embodiment) The fourth embodiment of the present invention will be described below.
The embodiment will be described. In the present embodiment, an example in which a dry cleaning unit for dry cleaning with plasma is provided in an electrolytic plating apparatus will be described. FIG. 23 is a schematic vertical sectional view of the electrolytic plating apparatus according to this embodiment.

As shown in FIG. 23, the electrolytic plating apparatus M
Includes a dry cleaning unit 120 for dry cleaning the wafer W with plasma. The dry cleaning section 120 is connected to the housing 71 via a gate valve 93. The dry cleaning unit 120 has substantially the same structure as the dry cleaning device DW according to the second embodiment. However, in this embodiment, the susceptor 54 is not provided.

Dry cleaning and electrolytic plating performed in the electrolytic plating apparatus M having the dry cleaning unit 120 will be described below with reference to FIGS. 24 and 25. FIG. 24 is a flow chart showing a flow of the dry cleaning process according to the present embodiment, and FIGS. 25A and 25B are diagrams schematically showing the dry cleaning process according to the present embodiment. is there.

First, the gate valve 52 of the dry cleaning section 120 is opened, the wafer holding member 34 holding the wafer W is extended, and the wafer W is carried into the processing chamber 41 (step 3 (1d)).

After the wafer W is loaded into the processing chamber 41, the wafer holding member 34 stops inside the processing chamber 41 (step 3 (2d)).

After the wafer holding member 34 is stopped in the processing chamber 41, the gate valve 52 is closed in that state and the vacuum pump 50 is operated to bring the processing chamber 41 into a vacuum state (step 3 (3d )).

Then, while maintaining the vacuum state, as shown in FIG.
As shown in (a), the shower head 10 is supplied with ozone gas.
2 is introduced, and a voltage is applied between the shower head 102 and the lower electrode 103 to perform dry cleaning (step 3 (4d)).

After the organic substances are sufficiently removed from the wafer W, the introduction of ozone gas and the application of voltage are stopped as shown in FIG. 25 (b), and the dry cleaning is finished (step 3 (5d)).

After the dry cleaning is completed, the vacuum pump 50
Is stopped and the purge gas is supplied to return the inside of the processing chamber 41 to the atmospheric pressure (step 3 (6
d)).

After the inside of the processing chamber 41 is returned to atmospheric pressure, the gate valve 93 interposed between the processing chamber 41 and the housing 71 is opened, and the stopped wafer holding member 34 extends into the housing 71 ( Step 3
(7d)).

Then, plating is performed on the dry-washed seed layer 58 (step 4 (1) to step 4 (1
5)).

In this embodiment, since the dry cleaning section 120 is provided in the electrolytic plating apparatus M, the same effect as that of the third embodiment can be obtained. Since plasma is used in this embodiment, the cleaning speed is higher than that in the third embodiment, and the time required for dry cleaning can be shortened.

The present invention is not limited to the contents described in the first to fourth embodiments, but the structure, material,
The arrangement and the like of each member can be appropriately changed without departing from the scope of the present invention. Although the processing chamber 41 is provided and described in the third embodiment, the processing chamber 41 may not be provided.

Although the processing chamber 41 is arranged outside the housing 71 in the third and fourth embodiments, it may be arranged inside the housing 71. Further, in the third and fourth embodiments, the susceptor 54 is not provided in the processing chamber 41, but the susceptor 54 may be provided. In this case, the wafer W
Can be placed on the susceptor 54 for dry cleaning.

[0157]

As described above, according to the electrolytic plating method, electrolytic plating apparatus, and electrolytic plating system of the present invention, it is possible to easily perform plating on the seed layer.

[Brief description of drawings]

FIG. 1 is a schematic perspective view of an electrolytic plating system according to a first embodiment.

FIG. 2 is a schematic plan view of the electrolytic plating system according to the first embodiment.

FIG. 3 is a schematic front view of the electrolytic plating system according to the first embodiment.

FIG. 4 is a schematic side view of the electroplating system according to the first embodiment.

FIG. 5 is a schematic vertical sectional view of the dry cleaning apparatus according to the first embodiment.

FIG. 6 is a diagram schematically showing a wafer to be cleaned by the dry cleaning apparatus according to the first embodiment.

FIG. 7 is a vertical sectional view including a partially enlarged view schematically showing the electroplating apparatus according to the first embodiment.

FIG. 8 is a schematic plan view of the electroplating apparatus according to the first embodiment.

FIG. 9 is a flowchart showing a flow of a seed layer forming process and a process performed in the electrolytic plating system according to the first embodiment.

FIG. 10 is a flowchart showing a flow of a dry cleaning process according to the first embodiment.

FIG. 11A to FIG. 11D are diagrams schematically showing the dry cleaning process according to the first embodiment.

FIG. 12A to FIG. 12D are diagrams schematically showing a dry cleaning process according to the first embodiment.

FIG. 13A and FIG. 13B are diagrams schematically showing the dry cleaning step according to the first embodiment.

FIG. 14 is a flowchart showing a flow of a plating process according to the first embodiment.

FIG. 15 is a diagram schematically showing a plated wafer according to the first embodiment.

FIG. 16 is a schematic vertical sectional view of a dry cleaning apparatus according to a second embodiment.

FIG. 17 is a flowchart showing a flow of a dry cleaning process according to the second embodiment.

FIG. 18A and FIG. 18B are diagrams schematically showing a dry cleaning step according to the second embodiment.

FIG. 19 is a schematic vertical sectional view of an electrolytic plating apparatus according to a third embodiment.

FIG. 20 is a flowchart showing a flow of a dry cleaning process according to the third embodiment.

21A to 21D are diagrams schematically showing a dry cleaning step according to the third embodiment.

22A to 22C are diagrams schematically showing a dry cleaning step according to the third embodiment.

FIG. 23 is a schematic vertical sectional view of an electrolytic plating apparatus according to a fourth embodiment.

FIG. 24 is a flowchart showing a flow of a dry cleaning process according to the fourth embodiment.

FIG. 25 (a) and FIG. 25 (b) are diagrams schematically showing the dry cleaning step according to the fourth embodiment.

[Explanation of symbols]

W ... Wafer DW ... Dry cleaning device M ... Electrolytic plating equipment 41 ... Processing chamber 42, 102 ... Shower head 66 ... Mercury enclosed lamp 67 ... Microwave generation mechanism 68 ... Waveguide 71 ... Housing 72 ... Plating liquid tank 82 ... Holder 103 ... Lower electrode 110, 120 ... Dry cleaning section

   ─────────────────────────────────────────────────── ─── Continued front page    F-term (reference) 4K024 AA09 AA10 AA11 AA12 AA14                       BB12 CB01 CB02 CB26 DA04                 4M104 BB04 BB06 BB08 BB09 DD22                       DD52

Claims (17)

[Claims] 1. A seed layer forming step of forming a seed layer on a substrate having openings formed therein, a dry cleaning step of dry cleaning the substrate having the seed layer formed thereon, and the dry cleaned substrate. An electroplating method comprising: an electroplating step of applying a current to the seed layer in a state of being in contact with a plating solution to perform plating on the seed layer. 2. The electrolytic plating method according to claim 1, wherein the dry cleaning step is performed using active atoms or molecules. 3. The electrolytic plating method according to claim 2, wherein the active atom or molecule is active oxygen. 4. The electrolytic plating method according to claim 3, wherein the active oxygen is generated by irradiating the atmosphere or a processing gas with ultraviolet rays. 5. The electrolytic plating method according to claim 3, wherein the active oxygen is generated by plasma. 6. A plating solution tank for storing a plating solution, a holder for holding a substrate having an opening and a seed layer formed on a surface thereof, and a first contacting the substrate held by the holder. An electrolytic plating apparatus comprising: an electrode, a second electrode to which a voltage is applied between the first electrode, and a dry cleaning unit that dry-cleans the substrate. 7. The electroplating apparatus according to claim 6, wherein the dry cleaning unit includes active oxygen generating means for generating active oxygen. 8. The electrolytic plating apparatus according to claim 7,
The dry cleaning unit further includes a processing chamber,
The electroplating apparatus, wherein the active oxygen generating means generates the active oxygen in the processing chamber. 9. The electroplating apparatus according to claim 7 or 8, wherein the active oxygen generating means includes an ultraviolet ray generating section for generating ultraviolet rays. 10. The electroplating apparatus according to claim 7 or 8, wherein the active oxygen generating means includes a plasma generating section for generating plasma. 11. The electrolytic plating apparatus according to claim 6, further comprising a housing that contains the plating solution tank and the holder and has a transfer section for transferring the substrate. The electroplating apparatus further comprising: the dry cleaning unit provided in the transport unit. 12. A dry cleaning apparatus for dry-cleaning a substrate having an opening and a seed layer formed on the surface thereof; and applying a current to the seed layer of the dry-cleaned substrate to form a dry layer on the seed layer. An electroplating system comprising: an electroplating device for performing plating. 13. The electrolytic plating system according to claim 12, wherein the dry cleaning apparatus includes a processing chamber, and active oxygen generating means for generating active oxygen in the processing chamber. Electroplating system to do. 14. The electroplating system according to claim 13, wherein the active oxygen generating means includes an ultraviolet ray generating section for generating ultraviolet rays. 15. The electroplating system according to claim 13, wherein the active oxygen generating means includes a plasma generating part for generating plasma. 16. The electrolytic plating system according to claim 13, further comprising an oxygen atom-containing gas introduction system for introducing a gas containing oxygen atoms into the processing chamber. Electroplating system characterized by. 17. The electrolytic plating system according to claim 16, wherein the oxygen atom-containing gas introduction system uses at least one of ozone gas, oxygen gas, nitrogen dioxide gas, hydrogen peroxide gas, and water vapor. An electrolytic plating system characterized by being introduced into a processing chamber.