JP2021048437A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2021048437A JP2021048437A JP2019168196A JP2019168196A JP2021048437A JP 2021048437 A JP2021048437 A JP 2021048437A JP 2019168196 A JP2019168196 A JP 2019168196A JP 2019168196 A JP2019168196 A JP 2019168196A JP 2021048437 A JP2021048437 A JP 2021048437A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 75
- 239000003990 capacitor Substances 0.000 claims abstract description 18
- 229910002601 GaN Inorganic materials 0.000 description 10
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 10
- 238000010586 diagram Methods 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000009499 grossing Methods 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000003985 ceramic capacitor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
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- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Power Conversion In General (AREA)
- Electronic Switches (AREA)
- Semiconductor Integrated Circuits (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
Description
本実施形態の半導体装置は、第1電極と、第2電極と、第1制御電極と、を有する第1ノーマリーオフトランジスタと、第2電極に第1配線を介して電気的に接続された第3電極と、第4電極と、第2制御電極と、を有するノーマリーオントランジスタと、第5電極と、第3電極に第2配線を介して電気的に接続された第6電極と、第3制御電極と、を有する第2ノーマリーオフトランジスタと、第2制御電極に電気的に接続された第1アノードと、第3電極に電気的に接続された第1カソードと、を有する第1ダイオードと、第1アノード及び第2制御電極に接続された第1端部と、第2端部と、を有するコンデンサと、を備える。
本実施形態の半導体装置は、第2端部に電気的に接続された第2ゲートドライブ回路と、第1制御電極及び第3制御電極に電気的に接続された第3ゲートドライブ回路と、をさらに備える点で、第1実施形態の半導体装置と異なっている。ここで、第1実施形態と重複する点については、記載を省略する。
11 第1電極
12 第2電極
13 第1制御電極
20 ノーマリーオントランジスタ
21 第3電極
22 第4電極
23 第2制御電極
30 第2ノーマリーオフトランジスタ
31 第5電極
32 第6電極
33 第3制御電極
40 第1配線
42 第3配線
46 第2配線
48 第4配線
70 第2ダイオード
71 第2アノード
72 第2カソード
75 抵抗
76 第3端部
77 第4端部
80 第1ダイオード
81 第1アノード
82 第2アノード
85 コンデンサ
86 第1端部
87 第2端部
90 第3ダイオード
91 第3アノード
92 第3カソード
96a 第1ゲートドライブ回路
96b 第2ゲートドライブ回路
96c 第3ゲートドライブ回路
100 半導体装置
110 半導体装置
Claims (6)
- 第1電極と、第2電極と、第1制御電極と、を有する第1ノーマリーオフトランジスタと、
前記第2電極に第1配線を介して電気的に接続された第3電極と、第4電極と、第2制御電極と、を有するノーマリーオントランジスタと、
第5電極と、前記第3電極に第2配線を介して電気的に接続された第6電極と、第3制御電極と、を有する第2ノーマリーオフトランジスタと、
前記第2制御電極に電気的に接続された第1アノードと、前記第3電極に電気的に接続された第1カソードと、を有する第1ダイオードと、
前記第1アノード及び前記第2制御電極に接続された第1端部と、第2端部と、を有するコンデンサと、
を備える半導体装置。 - 前記第1ノーマリーオフトランジスタのオン抵抗をRon1、前記第2ノーマリーオフトランジスタのオン抵抗をRon2、前記第1配線のインダクタンスをLs1、前記第2配線のインダクタンスをLs2としたときに、
(Ron2×Ls1)/(Ron1×Ls2)>2
である請求項1記載の半導体装置。 - Ron1<Ron2である請求項1又は請求項2記載の半導体装置。
- 前記第1制御電極及び前記第3制御電極に電気的に接続された第3端部と、前記第2端部に電気的に接続された第4端部と、を有する抵抗と、
前記第2端部及び前記第4端部に電気的に接続された第2アノードと、前記第1制御電極、前記第3制御電極及び前記第3端部に接続された第2カソードと、を有し前記抵抗に対して並列に設けられた第2ダイオードと、
をさらに備える請求項1乃至請求項3いずれか一項記載の半導体装置。 - 前記第1制御電極、前記第3制御電極及び前記第2端部に電気的に接続された第1ゲートドライブ回路をさらに備える請求項1乃至請求項4いずれか一項記載の半導体装置。
- 前記第2端部に電気的に接続された第2ゲートドライブ回路と、
前記第1制御電極及び前記第3制御電極に電気的に接続された第3ゲートドライブ回路と、
をさらに備える請求項1乃至請求項3いずれか一項記載の半導体装置。
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