JP2021027105A - 化合物半導体装置及びその製造方法 - Google Patents
化合物半導体装置及びその製造方法 Download PDFInfo
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- JP2021027105A JP2021027105A JP2019142479A JP2019142479A JP2021027105A JP 2021027105 A JP2021027105 A JP 2021027105A JP 2019142479 A JP2019142479 A JP 2019142479A JP 2019142479 A JP2019142479 A JP 2019142479A JP 2021027105 A JP2021027105 A JP 2021027105A
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- Prior art keywords
- aluminum oxide
- oxide film
- compound semiconductor
- layer
- insulating layer
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 164
- 150000001875 compounds Chemical class 0.000 title claims abstract description 98
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 28
- 238000000034 method Methods 0.000 title claims abstract description 28
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 97
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 21
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 21
- 239000012298 atmosphere Substances 0.000 claims description 9
- 230000001590 oxidative effect Effects 0.000 claims description 5
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 13
- 239000007789 gas Substances 0.000 description 13
- 229910052760 oxygen Inorganic materials 0.000 description 11
- 239000001301 oxygen Substances 0.000 description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 8
- 239000003990 capacitor Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- IRPGOXJVTQTAAN-UHFFFAOYSA-N 2,2,3,3,3-pentafluoropropanal Chemical compound FC(F)(F)C(F)(F)C=O IRPGOXJVTQTAAN-UHFFFAOYSA-N 0.000 description 6
- 229910002704 AlGaN Inorganic materials 0.000 description 6
- KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminum fluoride Inorganic materials F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 description 6
- 238000000231 atomic layer deposition Methods 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
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- 125000006850 spacer group Chemical group 0.000 description 3
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- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 3
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 description 2
- 229910016569 AlF 3 Inorganic materials 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- UBAZGMLMVVQSCD-UHFFFAOYSA-N carbon dioxide;molecular oxygen Chemical compound O=O.O=C=O UBAZGMLMVVQSCD-UHFFFAOYSA-N 0.000 description 2
- 229910002091 carbon monoxide Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 2
- 229910021334 nickel silicide Inorganic materials 0.000 description 2
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 2
- -1 oxygen radicals Chemical class 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- PEUPIGGLJVUNEU-UHFFFAOYSA-N nickel silicon Chemical compound [Si].[Ni] PEUPIGGLJVUNEU-UHFFFAOYSA-N 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Abstract
Description
先ず、第1の実施形態について説明する。第1の実施形態は、高電子移動度トランジスタ(HEMT)を含む化合物半導体装置に関する。図1は、第1の実施形態に係る化合物半導体装置を示す断面図である。
次に、第2の実施形態について説明する。第2の実施形態は、GaN系HEMTを含む化合物半導体装置に関する。図3は、第2の実施形態に係る化合物半導体装置を示す断面図である。
次に、第3の実施形態について説明する。第3の実施形態は、GaN系HEMTを含む化合物半導体装置に関し、酸化アルミニウム膜の構成の点で第2の実施形態と相違する。図6は、第3の実施形態に係る化合物半導体装置を示す断面図である。
次に、第4の実施形態について説明する。第4の実施形態は、HEMTのディスクリートパッケージに関する。図9は、第4の実施形態に係るディスクリートパッケージを示す図である。
次に、第5の実施形態について説明する。第5の実施形態は、HEMTを備えたPFC(Power Factor Correction)回路に関する。図10は、第5の実施形態に係るPFC回路を示す結線図である。
次に、第6の実施形態について説明する。第6の実施形態は、サーバ電源に好適な、HEMTを備えた電源装置に関する。図11は、第6の実施形態に係る電源装置を示す結線図である。
次に、第7の実施形態について説明する。第7の実施形態は、HEMTを備えた増幅器に関する。図12は、第7の実施形態に係る増幅器を示す結線図である。
化合物半導体の電子走行層及び電子供給層を含む半導体積層構造と、
前記電子供給層の上方のゲート電極、ソース電極及びドレイン電極と、
前記ソース電極と前記ドレイン電極との間で前記半導体積層構造上に設けられ、ゲートリセスが形成された絶縁層と、
を有し、
前記ゲート電極は、
前記ゲートリセス内の第1の部分と、
前記第1の部分につながり、前記ゲートリセスより前記ドレイン電極側で前記絶縁層上の第2の部分と、
を有し、
前記絶縁層は、前記半導体積層構造に直接接する酸化アルミニウム膜を有し、
前記酸化アルミニウム膜は、少なくとも、前記絶縁層の厚さ方向で、前記第2の部分と前記半導体積層構造との間に位置し、
前記酸化アルミニウム膜の組成をAlOxと表したとき、xの値が1.5より大きいことを特徴とする化合物半導体装置。
(付記2)
前記酸化アルミニウム膜は、前記絶縁層の厚さ方向で、前記第1の部分と前記半導体積層構造との間にも位置することを特徴とする付記1に記載の化合物半導体装置。
(付記3)
前記第1の部分は、前記酸化アルミニウム膜に直接接することを特徴とする付記2に記載の化合物半導体装置。
(付記4)
前記絶縁層は、前記酸化アルミニウム膜上の窒化シリコン膜を有することを特徴とする付記1乃至3のいずれか1項に記載の化合物半導体装置。
(付記5)
前記第1の部分は、前記窒化シリコン膜に直接接するニッケル膜を含むことを特徴とする付記4に記載の化合物半導体装置。
(付記6)
前記半導体積層構造の前記第1の部分と前記ソース電極との間の部分は、前記酸化アルミニウム膜から露出していることを特徴とする付記1乃至5のいずれか1項に記載の化合物半導体装置。
(付記7)
前記酸化アルミニウム膜の厚さは5nm以下であることを特徴とする付記1乃至6のいずれか1項に記載の化合物半導体装置。
(付記8)
化合物半導体の電子走行層及び電子供給層を含む半導体積層構造を準備する工程と、
前記電子供給層の上方にソース電極及びドレイン電極を形成する工程と、
前記ソース電極と前記ドレイン電極との間で前記半導体積層構造上に絶縁層を形成する工程と、
前記絶縁層にゲートリセスを形成する工程と、
前記ゲートリセス内の第1の部分と、前記第1の部分につながり、前記ゲートリセスより前記ドレイン電極側で前記絶縁層上の第2の部分と、を有するゲート電極を形成する工程と、
を有し、
前記絶縁層を形成する工程は、
前記半導体積層構造に直接接する酸化アルミニウム膜を形成する工程と、
前記酸化アルミニウム膜の組成をAlOxと表したとき、xの値が1.5より大きくなるように、前記酸化アルミニウム膜を酸化性雰囲気中で熱処理する工程と、
を有し、
前記酸化アルミニウム膜は、少なくとも、前記絶縁層の厚さ方向で、前記第2の部分と前記半導体積層構造との間に位置することを特徴とする化合物半導体装置の製造方法。
(付記9)
前記酸化性雰囲気は、水蒸気、酸素、二酸化炭素、一酸化炭素、二酸化窒素若しくは一酸化窒素又はこれらの任意の組み合わせを含む雰囲気であることを特徴とする付記8に記載の化合物半導体装置の製造方法。
(付記10)
前記酸化アルミニウム膜は、酸素源として酸素プラズマ又はオゾンを用いた原子層堆積法により形成されることを特徴とする付記8又は9に記載の化合物半導体装置の製造方法。
(付記11)
付記1乃至7のいずれか1項に記載の化合物半導体装置を有することを特徴とする増幅器。
102、202:電子走行層
104、204:電子供給層
106、206:半導体積層構造
113、213:ソース電極
114、214:ドレイン電極
120、220:絶縁層
121、221、321:酸化アルミニウム膜
122、222:窒化シリコン膜
123、223:ゲートリセス
130、230:ゲート電極
131、231:第1の部分
132、232:第2の部分
230A:ニッケル膜
Claims (5)
- 化合物半導体の電子走行層及び電子供給層を含む半導体積層構造と、
前記電子供給層の上方のゲート電極、ソース電極及びドレイン電極と、
前記ソース電極と前記ドレイン電極との間で前記半導体積層構造上に設けられ、ゲートリセスが形成された絶縁層と、
を有し、
前記ゲート電極は、
前記ゲートリセス内の第1の部分と、
前記第1の部分につながり、前記ゲートリセスより前記ドレイン電極側で前記絶縁層上の第2の部分と、
を有し、
前記絶縁層は、前記半導体積層構造に直接接する酸化アルミニウム膜を有し、
前記酸化アルミニウム膜は、少なくとも、前記絶縁層の厚さ方向で、前記第2の部分と前記半導体積層構造との間に位置し、
前記酸化アルミニウム膜の組成をAlOxと表したとき、xの値が1.5より大きいことを特徴とする化合物半導体装置。 - 前記酸化アルミニウム膜は、前記絶縁層の厚さ方向で、前記第1の部分と前記半導体積層構造との間にも位置することを特徴とする請求項1に記載の化合物半導体装置。
- 前記第1の部分は、前記酸化アルミニウム膜に直接接することを特徴とする請求項2に記載の化合物半導体装置。
- 前記絶縁層は、前記酸化アルミニウム膜上の窒化シリコン膜を有することを特徴とする請求項1乃至3のいずれか1項に記載の化合物半導体装置。
- 化合物半導体の電子走行層及び電子供給層を含む半導体積層構造を準備する工程と、
前記電子供給層の上方にソース電極及びドレイン電極を形成する工程と、
前記ソース電極と前記ドレイン電極との間で前記半導体積層構造上に絶縁層を形成する工程と、
前記絶縁層にゲートリセスを形成する工程と、
前記ゲートリセス内の第1の部分と、前記第1の部分につながり、前記ゲートリセスより前記ドレイン電極側で前記絶縁層上の第2の部分と、を有するゲート電極を形成する工程と、
を有し、
前記絶縁層を形成する工程は、
前記半導体積層構造に直接接する酸化アルミニウム膜を形成する工程と、
前記酸化アルミニウム膜の組成をAlOxと表したとき、xの値が1.5より大きくなるように、前記酸化アルミニウム膜を酸化性雰囲気中で熱処理する工程と、
を有し、
前記酸化アルミニウム膜は、少なくとも、前記絶縁層の厚さ方向で、前記第2の部分と前記半導体積層構造との間に位置することを特徴とする化合物半導体装置の製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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JP2019142479A JP7371384B2 (ja) | 2019-08-01 | 2019-08-01 | 化合物半導体装置及びその製造方法 |
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JP2016072358A (ja) * | 2014-09-29 | 2016-05-09 | 株式会社デンソー | 半導体装置およびその製造方法 |
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JP2015056457A (ja) | 2013-09-10 | 2015-03-23 | 株式会社東芝 | 半導体装置 |
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JP2012175018A (ja) * | 2011-02-24 | 2012-09-10 | Fujitsu Ltd | 化合物半導体装置 |
JP2014183080A (ja) * | 2013-03-18 | 2014-09-29 | Fujitsu Ltd | 半導体装置及びその製造方法、電源装置、高周波増幅器 |
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