JP2020532102A - モニタリングデバイスを有する処理ツール - Google Patents
モニタリングデバイスを有する処理ツール Download PDFInfo
- Publication number
- JP2020532102A JP2020532102A JP2020508435A JP2020508435A JP2020532102A JP 2020532102 A JP2020532102 A JP 2020532102A JP 2020508435 A JP2020508435 A JP 2020508435A JP 2020508435 A JP2020508435 A JP 2020508435A JP 2020532102 A JP2020532102 A JP 2020532102A
- Authority
- JP
- Japan
- Prior art keywords
- sensor
- monitoring device
- chamber space
- chamber
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000012545 processing Methods 0.000 title claims abstract description 156
- 238000012806 monitoring device Methods 0.000 title claims abstract description 111
- 239000000463 material Substances 0.000 claims abstract description 116
- 238000004519 manufacturing process Methods 0.000 claims abstract description 58
- 238000000034 method Methods 0.000 claims abstract description 52
- 230000008859 change Effects 0.000 claims description 16
- 230000000977 initiatory effect Effects 0.000 claims description 3
- 230000004044 response Effects 0.000 claims description 3
- 238000000151 deposition Methods 0.000 abstract description 38
- 230000008021 deposition Effects 0.000 abstract description 37
- 230000008569 process Effects 0.000 abstract description 26
- 238000005530 etching Methods 0.000 abstract description 23
- 238000012544 monitoring process Methods 0.000 abstract description 12
- 238000010586 diagram Methods 0.000 abstract description 6
- 238000004140 cleaning Methods 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 description 124
- 239000004065 semiconductor Substances 0.000 description 22
- 230000003287 optical effect Effects 0.000 description 21
- 239000010410 layer Substances 0.000 description 18
- 239000007789 gas Substances 0.000 description 15
- 239000000758 substrate Substances 0.000 description 14
- 238000011282 treatment Methods 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- 230000033001 locomotion Effects 0.000 description 12
- 150000003254 radicals Chemical class 0.000 description 11
- 238000007789 sealing Methods 0.000 description 11
- 238000003860 storage Methods 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 238000012423 maintenance Methods 0.000 description 6
- 239000011247 coating layer Substances 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 238000004891 communication Methods 0.000 description 4
- 238000005137 deposition process Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 238000001514 detection method Methods 0.000 description 3
- 238000011065 in-situ storage Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000005070 sampling Methods 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 241001634884 Cochlicopa lubricella Species 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 238000013500 data storage Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000003380 quartz crystal microbalance Methods 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000010897 surface acoustic wave method Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052729 chemical element Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 238000013480 data collection Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011066 ex-situ storage Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000008246 gaseous mixture Substances 0.000 description 1
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000003278 mimic effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000036316 preload Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
- C23C14/543—Controlling the film thickness or evaporation rate using measurement on the vapor source
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Vapour Deposition (AREA)
- Automation & Control Theory (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Auxiliary Devices For Machine Tools (AREA)
Abstract
Description
Claims (15)
- 処理ツールであって、
チャンバ空間の周りにライナ壁を有する処理チャンバであって、前記ライナ壁が、前記チャンバ空間と外側ライナ表面との間に孔を含む、処理チャンバと、
センサ軸に沿って前記孔と整列したセンサ表面を有するマイクロセンサ、及び前記センサ表面から材料が除去されたときに変化するパラメータを含むモニタリングデバイスと、
を備えている処理ツール。 - 前記モニタリングデバイスが、凹部を有する端部面を含み、前記マイクロセンサが、前記凹部内に取り付けられる、請求項1に記載の処理ツール。
- 前記端部面に取り付けられたセンサシールをさらに備え、前記センサシールが、前記凹部の周りで延在し、前記センサ表面が、前記孔を通して前記チャンバ空間に露出される、請求項2に記載の処理ツール。
- 前記端部面に取り付けられたブランクシールをさらに備え、前記ブランクシールが、前記端部面のブランク領域の周りで延在する、請求項3に記載の処理ツール。
- 前記処理チャンバに連結された第1の端部、及び前記モニタリングデバイスに連結された第2の端部を有する気圧式アクチュエータをさらに備え、前記端部面を前記外側ライナ表面から離すように移動させるために、前記第1の端部が、前記第2の端部に対して移動可能である、請求項2に記載の処理ツール。
- 前記マイクロセンサが、ディスク形状を有する共鳴体を含み、前記ディスク形状が、前記孔に面する前記センサ表面、及び背面センサ表面を含み、前記背面センサ表面に電気的に接続された電気真空フィードスルーをさらに備えている、請求項1に記載の処理ツール。
- 前記モニタリングデバイスが、前記背面センサ表面と接触する圧縮可能コネクタを含み、前記圧縮可能コネクタが、前記電気真空フィードスルーに電気的に接続されている、請求項6に記載の処理ツール。
- モニタリングデバイスであって、
中央軸に沿って延在するデバイス本体であって、当該デバイス本体が、前記中央軸に対して直交する端部面を含み、前記端部面が、凹部を含む、デバイス本体と、
前記凹部内に取り付けられたマイクロセンサであって、センサ表面、及び前記センサ表面から材料が除去されたときに変化するパラメータを含む、マイクロセンサと、
前記端部面に取り付けられたセンサシールであって、前記センサシールが、前記凹部の周りで延在し、前記センサ表面が、前記センサシールを通して周囲環境に露出される、センサシールと、
を備えているモニタリングデバイス。 - 前記端部面に取り付けられたブランクシールをさらに備え、前記ブランクシールが、前記端部面のブランク領域の周りで延在する、請求項8に記載のモニタリングデバイス。
- ブランク軸が、中心軸に対して平行に、且つ前記ブランク領域を通って延在し、センサ軸が、前記中心軸に対して平行に、且つ前記センサ表面を通って延在し、前記ブランク軸及び前記センサ軸が、前記中心軸から等距離にある、請求項9に記載のモニタリングデバイス。
- 前記マイクロセンサが、ディスク形状を有する共鳴体を含み、前記ディスク形状が、前記周囲環境に面する前記センサ表面、及び背面センサ表面を含み、前記背面センサ表面に電気的に接続された電気真空フィードスルーをさらに備えている、請求項8に記載のモニタリングデバイス。
- 前記モニタリングデバイスが、前記背面センサ表面と接触する圧縮可能コネクタを含み、前記圧縮可能コネクタが、前記電気真空フィードスルーに電気的に接続されている、請求項11に記載のモニタリングデバイス。
- モニタリングデバイスの端部面上の第1の領域をライナ壁内の孔に露出することであって、前記ライナ壁が、処理ツールのチャンバ空間の周りで延在する、第1の領域をライナ壁内の孔に露出することと、
前記モニタリングデバイスを中央軸の周りで回転させて、前記第1の領域を前記孔から離すように移動させ、前記端部面上の第2の領域を前記孔に露出することと、
を含む方法。 - 材料のウエハを処理ツールのチャンバ空間の中にローディングすることであって、ライナ壁が、前記チャンバ空間の周りで延在し、前記ライナ壁が、前記チャンバ空間と外側ライナ表面との間に孔を含み、モニタリングデバイスが、前記孔と整列したセンサ表面を有するセンサを含み、前記センサ表面が、前記第1の領域である、材料のウエハを処理ツールのチャンバ空間の中にローディングすることと、
前記チャンバ空間内でウエハ製造処理を開始することであって、当該ウエハ製造処理の間、前記材料が、前記孔を通して前記センサ表面から除去される、ウエハ製造処理を開始することと、
前記センサ表面から前記材料を除去したことに応答して、前記センサのパラメータの変化を検出することと、
をさらに含む、請求項13に記載の方法。 - 前記パラメータの前記変化に基づいて、前記センサ表面から前記材料の除去の速度を判定することをさらに含む、請求項14に記載の方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2021198265A JP7398423B2 (ja) | 2017-08-18 | 2021-12-07 | モニタリングデバイスを有する処理ツール |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/681,263 US10763143B2 (en) | 2017-08-18 | 2017-08-18 | Processing tool having a monitoring device |
US15/681,263 | 2017-08-18 | ||
PCT/US2018/042537 WO2019036139A1 (en) | 2017-08-18 | 2018-07-17 | TREATMENT TOOL WITH MONITORING DEVICE |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021198265A Division JP7398423B2 (ja) | 2017-08-18 | 2021-12-07 | モニタリングデバイスを有する処理ツール |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2020532102A true JP2020532102A (ja) | 2020-11-05 |
JP6991311B2 JP6991311B2 (ja) | 2022-01-12 |
Family
ID=65361596
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020508435A Active JP6991311B2 (ja) | 2017-08-18 | 2018-07-17 | モニタリングデバイスを有する処理ツール |
JP2021198265A Active JP7398423B2 (ja) | 2017-08-18 | 2021-12-07 | モニタリングデバイスを有する処理ツール |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021198265A Active JP7398423B2 (ja) | 2017-08-18 | 2021-12-07 | モニタリングデバイスを有する処理ツール |
Country Status (6)
Country | Link |
---|---|
US (2) | US10763143B2 (ja) |
JP (2) | JP6991311B2 (ja) |
KR (2) | KR102422119B1 (ja) |
CN (2) | CN116844999A (ja) |
TW (2) | TWI782734B (ja) |
WO (1) | WO2019036139A1 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10763143B2 (en) * | 2017-08-18 | 2020-09-01 | Applied Materials, Inc. | Processing tool having a monitoring device |
US11670490B2 (en) * | 2017-09-29 | 2023-06-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Integrated circuit fabrication system with adjustable gas injector |
US11415538B2 (en) | 2020-03-06 | 2022-08-16 | Applied Materials, Inc. | Capacitive sensor housing for chamber condition monitoring |
JP7446177B2 (ja) | 2020-08-03 | 2024-03-08 | 東京エレクトロン株式会社 | 基板処理装置および中継部材の駆動方法 |
US11284018B1 (en) * | 2020-09-15 | 2022-03-22 | Applied Materials, Inc. | Smart camera substrate |
US11721566B2 (en) * | 2021-07-13 | 2023-08-08 | Applied Materials, Inc. | Sensor assembly and methods of vapor monitoring in process chambers |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002373782A (ja) * | 2001-04-20 | 2002-12-26 | Eastman Kodak Co | 有機層を蒸着するための方法及び装置 |
JP2011029415A (ja) * | 2009-07-27 | 2011-02-10 | Tokyo Electron Ltd | 選択酸化処理方法、選択酸化処理装置およびコンピュータ読み取り可能な記憶媒体 |
WO2013186856A1 (ja) * | 2012-06-12 | 2013-12-19 | 富士通株式会社 | 環境測定装置及び環境測定方法 |
US20140053779A1 (en) * | 2012-08-22 | 2014-02-27 | Uchicago Argonne, Llc | Micro-balance sensor integrated with atomic layer deposition chamber |
US20170221775A1 (en) * | 2016-01-28 | 2017-08-03 | Leonard TEDESCHI | Real time process characterization |
Family Cites Families (47)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CH644722A5 (de) * | 1980-07-21 | 1984-08-15 | Balzers Hochvakuum | Schwingquarzmesskopf. |
US5025664A (en) | 1989-11-02 | 1991-06-25 | Leybold Inficon, Inc. | Multiple crystal head for deposition thickness monitor |
US5025661A (en) * | 1989-12-11 | 1991-06-25 | Allied-Signal Inc. | Combination air data probe |
US5282925A (en) | 1992-11-09 | 1994-02-01 | International Business Machines Corporation | Device and method for accurate etching and removal of thin film |
DE4342890A1 (de) * | 1993-12-16 | 1995-06-22 | Mannesmann Kienzle Gmbh | Verfahren zum Abdichten herstellprozeßbedingter Öffnungen an mikromechanischen Beschleunigungssensoren |
US5706840A (en) * | 1995-03-03 | 1998-01-13 | Sandia Corporation | Precision cleaning apparatus and method |
US5885402A (en) * | 1996-07-17 | 1999-03-23 | Applied Materials | Diagnostic head assembly for plasma chamber |
US5948983A (en) * | 1997-07-25 | 1999-09-07 | Leybold Inficon, Inc. | Wall deposition monitoring system |
JP2000310512A (ja) * | 1999-04-28 | 2000-11-07 | Hitachi Ltd | 薄膜の膜厚計測方法及びその装置並びにそれを用いた薄膜デバイスの製造方法及びその装置 |
TW543080B (en) | 1999-10-26 | 2003-07-21 | Fab Solutions Inc | Semiconductor device |
JP3752420B2 (ja) * | 1999-11-11 | 2006-03-08 | 東京エレクトロン株式会社 | 薄膜除去装置 |
JP4409744B2 (ja) * | 2000-10-20 | 2010-02-03 | ライトロン株式会社 | エッチング工程の進行状況表示方法およびエッチング工程モニタ装置 |
US6696362B2 (en) | 2001-02-08 | 2004-02-24 | Applied Materials Inc. | Method for using an in situ particle sensor for monitoring particle performance in plasma deposition processes |
US6513451B2 (en) * | 2001-04-20 | 2003-02-04 | Eastman Kodak Company | Controlling the thickness of an organic layer in an organic light-emiting device |
US20030045098A1 (en) | 2001-08-31 | 2003-03-06 | Applied Materials, Inc. | Method and apparatus for processing a wafer |
US6637723B1 (en) * | 2001-09-06 | 2003-10-28 | Entegris, Inc. | Fluid valve |
US7052622B2 (en) | 2001-10-17 | 2006-05-30 | Applied Materials, Inc. | Method for measuring etch rates during a release process |
TW200405395A (en) | 2002-05-29 | 2004-04-01 | Tokyo Electron Ltd | Method and apparatus for monitoring film deposition in a process chamber |
US6654659B1 (en) | 2002-06-24 | 2003-11-25 | Advanced Micro Drvices, Inc. | Quartz crystal monitor wafer for lithography and etch process monitoring |
KR20040053592A (ko) | 2002-12-17 | 2004-06-24 | 삼성전자주식회사 | 싱글 타입의 감시/제어용 증착 시스템 |
JP4363860B2 (ja) | 2003-02-04 | 2009-11-11 | 株式会社日立ハイテクノロジーズ | 真空処理装置の異物管理装置及び異物管理方法 |
US20050225308A1 (en) | 2004-03-31 | 2005-10-13 | Orvek Kevin J | Real-time monitoring of particles in semiconductor vacuum environment |
US7578301B2 (en) * | 2005-03-28 | 2009-08-25 | Lam Research Corporation | Methods and apparatus for determining the endpoint of a cleaning or conditioning process in a plasma processing system |
US20070125303A1 (en) * | 2005-12-02 | 2007-06-07 | Ward Ruby | High-throughput deposition system for oxide thin film growth by reactive coevaportation |
US7521915B2 (en) | 2006-04-25 | 2009-04-21 | Sokudo Co., Ltd. | Wafer bevel particle detection |
KR101388304B1 (ko) | 2006-09-29 | 2014-04-22 | 싸이버옵틱스 쎄미콘덕터 인코퍼레이티드 | 기판형 입자 센서 |
US7550379B2 (en) * | 2006-10-10 | 2009-06-23 | Asml Netherlands B.V. | Alignment mark, use of a hard mask material, and method |
KR20080045974A (ko) | 2006-11-21 | 2008-05-26 | 삼성전자주식회사 | 박막 증착장치 및 박막 증착방법 |
CN101802251B (zh) | 2007-09-21 | 2013-01-23 | 株式会社爱发科 | 薄膜形成装置、膜厚测定方法、膜厚传感器 |
US20100180913A1 (en) | 2007-12-20 | 2010-07-22 | Chantal Arena | Methods for in-situ chamber cleaning process for high volume manufacture of semiconductor materials |
JP5026326B2 (ja) | 2008-04-04 | 2012-09-12 | 株式会社日立ハイテクノロジーズ | エッチング処理状態の判定方法、システム |
IES20100241A2 (en) * | 2010-04-21 | 2011-10-26 | Impedans Ltd | Sensing of process parameters |
JP2011252834A (ja) * | 2010-06-03 | 2011-12-15 | Yamatake Corp | センサ及びその製造方法 |
US8954184B2 (en) | 2011-01-19 | 2015-02-10 | Tokyo Electron Limited | Tool performance by linking spectroscopic information with tool operational parameters and material measurement information |
JP2013163845A (ja) * | 2012-02-10 | 2013-08-22 | Nitto Denko Corp | 蒸着用坩堝及び蒸着装置並びに蒸着方法 |
KR101340425B1 (ko) | 2012-05-15 | 2013-12-10 | (주)베오스솔루션 | 박막 증착 장치 및 방법 |
US9515469B2 (en) * | 2012-12-14 | 2016-12-06 | General Electric Company | Vacuum feed-through assembly |
US9251983B2 (en) * | 2013-04-19 | 2016-02-02 | Sercel Inc. | Depth-activated sensor switch and method |
KR102044461B1 (ko) * | 2013-05-20 | 2019-11-14 | 주식회사 선익시스템 | 증착두께 측정장치 |
US9682396B2 (en) * | 2014-03-24 | 2017-06-20 | Carterra, Inc. | Dual flow cell fluid delivery systems |
KR102035146B1 (ko) | 2014-05-26 | 2019-10-22 | 가부시키가이샤 아루박 | 성막 장치, 유기막의 막후 측정 방법 및 유기막용 막후 센서 |
JP6448279B2 (ja) * | 2014-09-30 | 2019-01-09 | キヤノントッキ株式会社 | 真空蒸着装置 |
KR102309893B1 (ko) * | 2015-01-22 | 2021-10-07 | 삼성디스플레이 주식회사 | 증착속도 측정장치 |
US10510625B2 (en) | 2015-11-17 | 2019-12-17 | Lam Research Corporation | Systems and methods for controlling plasma instability in semiconductor fabrication |
KR102547687B1 (ko) | 2016-02-05 | 2023-06-27 | 삼성디스플레이 주식회사 | 증착률 모니터링 장치 및 이를 이용한 증착률 모니터링 방법 |
US9725302B1 (en) | 2016-08-25 | 2017-08-08 | Applied Materials, Inc. | Wafer processing equipment having exposable sensing layers |
US10763143B2 (en) | 2017-08-18 | 2020-09-01 | Applied Materials, Inc. | Processing tool having a monitoring device |
-
2017
- 2017-08-18 US US15/681,263 patent/US10763143B2/en active Active
-
2018
- 2018-07-17 CN CN202310624400.9A patent/CN116844999A/zh active Pending
- 2018-07-17 CN CN201880053440.XA patent/CN111164742B/zh active Active
- 2018-07-17 WO PCT/US2018/042537 patent/WO2019036139A1/en active Application Filing
- 2018-07-17 KR KR1020227005070A patent/KR102422119B1/ko active IP Right Grant
- 2018-07-17 KR KR1020207007958A patent/KR102365024B1/ko active IP Right Grant
- 2018-07-17 JP JP2020508435A patent/JP6991311B2/ja active Active
- 2018-07-23 TW TW110136986A patent/TWI782734B/zh active
- 2018-07-23 TW TW107125290A patent/TWI744541B/zh active
-
2020
- 2020-07-28 US US16/941,405 patent/US10957565B2/en active Active
-
2021
- 2021-12-07 JP JP2021198265A patent/JP7398423B2/ja active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002373782A (ja) * | 2001-04-20 | 2002-12-26 | Eastman Kodak Co | 有機層を蒸着するための方法及び装置 |
JP2011029415A (ja) * | 2009-07-27 | 2011-02-10 | Tokyo Electron Ltd | 選択酸化処理方法、選択酸化処理装置およびコンピュータ読み取り可能な記憶媒体 |
WO2013186856A1 (ja) * | 2012-06-12 | 2013-12-19 | 富士通株式会社 | 環境測定装置及び環境測定方法 |
US20140053779A1 (en) * | 2012-08-22 | 2014-02-27 | Uchicago Argonne, Llc | Micro-balance sensor integrated with atomic layer deposition chamber |
US20170221775A1 (en) * | 2016-01-28 | 2017-08-03 | Leonard TEDESCHI | Real time process characterization |
Also Published As
Publication number | Publication date |
---|---|
KR102365024B1 (ko) | 2022-02-18 |
US10957565B2 (en) | 2021-03-23 |
TW202207344A (zh) | 2022-02-16 |
CN116844999A (zh) | 2023-10-03 |
CN111164742B (zh) | 2023-06-02 |
US20200357669A1 (en) | 2020-11-12 |
JP7398423B2 (ja) | 2023-12-14 |
JP2022043121A (ja) | 2022-03-15 |
KR102422119B1 (ko) | 2022-07-18 |
KR20220025930A (ko) | 2022-03-03 |
US20190057889A1 (en) | 2019-02-21 |
CN111164742A (zh) | 2020-05-15 |
JP6991311B2 (ja) | 2022-01-12 |
TW201913854A (zh) | 2019-04-01 |
TWI744541B (zh) | 2021-11-01 |
WO2019036139A1 (en) | 2019-02-21 |
TWI782734B (zh) | 2022-11-01 |
US10763143B2 (en) | 2020-09-01 |
KR20200039779A (ko) | 2020-04-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6991311B2 (ja) | モニタリングデバイスを有する処理ツール | |
KR102439729B1 (ko) | 용량성 마이크로 센서들을 갖는 웨이퍼 처리 장비 | |
TWI773087B (zh) | 具有可暴露感測層的處理工具、顆粒監測裝置及方法 | |
JP7288493B2 (ja) | マイクロセンサを有するウエハ処理ツール |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20200410 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20210421 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20210511 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210803 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20211109 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20211207 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6991311 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |