JP2020514996A5 - - Google Patents

Download PDF

Info

Publication number
JP2020514996A5
JP2020514996A5 JP2019542168A JP2019542168A JP2020514996A5 JP 2020514996 A5 JP2020514996 A5 JP 2020514996A5 JP 2019542168 A JP2019542168 A JP 2019542168A JP 2019542168 A JP2019542168 A JP 2019542168A JP 2020514996 A5 JP2020514996 A5 JP 2020514996A5
Authority
JP
Japan
Prior art keywords
column
electron
optical
columns
electro
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2019542168A
Other languages
English (en)
Japanese (ja)
Other versions
JP2020514996A (ja
JP6971322B2 (ja
Filing date
Publication date
Priority claimed from US15/879,120 external-priority patent/US10777377B2/en
Application filed filed Critical
Publication of JP2020514996A publication Critical patent/JP2020514996A/ja
Publication of JP2020514996A5 publication Critical patent/JP2020514996A5/ja
Application granted granted Critical
Publication of JP6971322B2 publication Critical patent/JP6971322B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2019542168A 2017-02-05 2018-02-03 フォトマスク及びレチクル検査並びにウェハプリントチェック検証のためのマルチカラム間隔 Active JP6971322B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201762454807P 2017-02-05 2017-02-05
US62/454,807 2017-02-05
US15/879,120 2018-01-24
US15/879,120 US10777377B2 (en) 2017-02-05 2018-01-24 Multi-column spacing for photomask and reticle inspection and wafer print check verification
PCT/US2018/016761 WO2018144959A1 (en) 2017-02-05 2018-02-03 Multi-column spacing for photomask and reticle inspection and wafer print check verification

Publications (3)

Publication Number Publication Date
JP2020514996A JP2020514996A (ja) 2020-05-21
JP2020514996A5 true JP2020514996A5 (https=) 2021-03-11
JP6971322B2 JP6971322B2 (ja) 2021-11-24

Family

ID=63041130

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2019542168A Active JP6971322B2 (ja) 2017-02-05 2018-02-03 フォトマスク及びレチクル検査並びにウェハプリントチェック検証のためのマルチカラム間隔

Country Status (8)

Country Link
US (1) US10777377B2 (https=)
JP (1) JP6971322B2 (https=)
KR (1) KR102272445B1 (https=)
CN (1) CN110431488B (https=)
DE (1) DE112018000672T5 (https=)
IL (1) IL268436B2 (https=)
TW (1) TWI746788B (https=)
WO (1) WO2018144959A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7126355B2 (ja) * 2018-02-21 2022-08-26 株式会社ニューフレアテクノロジー 荷電粒子ビーム検査方法
DE102020103339A1 (de) * 2020-02-10 2021-08-12 Carl Zeiss Microscopy Gmbh Verfahren zum Betrieb eines Teilchenstrahlgeräts, Computerprogrammprodukt und Teilchenstrahlgerät zur Durchführung des Verfahrens
JP7477364B2 (ja) * 2020-05-19 2024-05-01 株式会社ホロン マルチビーム画像生成装置およびマルチビーム画像生成方法
US11899375B2 (en) 2020-11-20 2024-02-13 Kla Corporation Massive overlay metrology sampling with multiple measurement columns

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5384463A (en) * 1991-06-10 1995-01-24 Fujisu Limited Pattern inspection apparatus and electron beam apparatus
JPH10134757A (ja) * 1996-10-31 1998-05-22 Nikon Corp マルチビーム検査装置
JP3661592B2 (ja) * 1998-03-27 2005-06-15 株式会社日立製作所 パターン検査装置
WO2001039243A1 (en) 1999-11-23 2001-05-31 Ion Diagnostics, Inc. Electron optics for multi-beam electron beam lithography tool
US6977375B2 (en) * 2000-02-19 2005-12-20 Multibeam Systems, Inc. Multi-beam multi-column electron beam inspection system
EP1339100A1 (en) * 2000-12-01 2003-08-27 Ebara Corporation Inspection method and apparatus using electron beam, and device production method using it
EP1744348A3 (en) * 2001-11-02 2007-06-20 Ebara Corporation A semiconductor manufacturing apparatus having a built-in inspection apparatus and method therefor
US9390886B2 (en) * 2005-02-17 2016-07-12 Ebara Corporation Electro-optical inspection apparatus using electron beam
US9153413B2 (en) 2007-02-22 2015-10-06 Applied Materials Israel, Ltd. Multi-beam scanning electron beam device and methods of using the same
EP2122655A2 (en) * 2007-02-22 2009-11-25 Applied Materials Israel Ltd. High throughput sem tool
US8455838B2 (en) * 2011-06-29 2013-06-04 Kla-Tencor Corporation Multiple-column electron beam apparatus and methods
JP2013125652A (ja) * 2011-12-14 2013-06-24 Samsung Yokohama Research Institute Co Ltd 電子線装置
JP2013128069A (ja) * 2011-12-19 2013-06-27 Hitachi High-Technologies Corp 電子線検査装置、及び検査方法
US8806392B2 (en) * 2012-12-03 2014-08-12 Taiwan Semiconductor Manufacturing Company, Ltd. Distinguishable IC patterns with encoded information
JP6090690B2 (ja) * 2012-12-04 2017-03-08 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． 電子線装置
US9040910B2 (en) * 2013-05-23 2015-05-26 Tao Luo Multi-column electron beam inspection that uses custom printing methods
TWI658543B (zh) * 2013-12-05 2019-05-01 Stats Chippac, Ltd. 在半導體封裝中使用標準化載體的半導體裝置及方法
JP6677657B2 (ja) * 2015-02-05 2020-04-08 株式会社荏原製作所 検査装置

Similar Documents

Publication Publication Date Title
KR101950882B1 (ko) 하전 입자빔 검사 장치 및 하전 입자빔 검사 방법
JP2020514996A5 (https=)
TWI743262B (zh) 用於電子束系統中之像差校正之系統
TWI861627B (zh) 處理樣品之方法
KR102480545B1 (ko) 텔레센트릭 조명을 갖는 다중 빔 전자 특성화 도구
TW202240638A (zh) 帶電粒子系統、使用帶電粒子之多射束處理樣品之方法
JP2019114377A (ja) マルチビーム画像取得装置及びマルチビーム画像取得方法
JP6834817B2 (ja) マルチビーム検査用アパーチャ、マルチビーム用ビーム検査装置、及びマルチ荷電粒子ビーム描画装置
US20240044820A1 (en) Methods of inspecting samples with a beam of charged particles
JP6971322B2 (ja) フォトマスク及びレチクル検査並びにウェハプリントチェック検証のためのマルチカラム間隔
KR102817036B1 (ko) 영구 자석 어레이를 위한 표유장의 완화를 위한 쉴딩 전략
KR102444744B1 (ko) 하전 입자 빔 검사의 샘플 검사 레시피의 동적 결정
CN101243532B (zh) 用于电子柱的检测器及用于电子柱的电子检测方法
JPWO2020081277A5 (https=)
KR102936003B1 (ko) 설계 보조 광시야 계측
JP2016012694A (ja) リソグラフィ装置、および物品製造方法
KR102535162B1 (ko) 다중 하전 입자 빔으로 샘플을 검사하는 방법
KR101357940B1 (ko) 편심 어퍼쳐를 가진 전극층을 포함하는 멀티 입자 빔 칼럼
US20140209813A1 (en) Multi-particle beam column having an electrode layer including an eccentric aperture
TW202548827A (zh) 用於評估樣本表面之方法及設備、掃描樣本表面之方法、及帶電粒子評估設備