JP2020514979A - 透湿防止膜とその製造方法 - Google Patents
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- 230000003449 preventive effect Effects 0.000 title claims abstract description 264
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 238000000034 method Methods 0.000 claims abstract description 61
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000001301 oxygen Substances 0.000 claims abstract description 19
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 19
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 18
- 238000000231 atomic layer deposition Methods 0.000 claims abstract description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 50
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 26
- 239000007789 gas Substances 0.000 claims description 26
- 239000010703 silicon Substances 0.000 claims description 26
- 230000008569 process Effects 0.000 claims description 25
- 229910052710 silicon Inorganic materials 0.000 claims description 25
- 239000010410 layer Substances 0.000 claims description 22
- 239000012495 reaction gas Substances 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 21
- 238000000151 deposition Methods 0.000 claims description 19
- 230000008021 deposition Effects 0.000 claims description 19
- 229910052757 nitrogen Inorganic materials 0.000 claims description 18
- 238000001039 wet etching Methods 0.000 claims description 15
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 14
- 229910021529 ammonia Inorganic materials 0.000 claims description 14
- 230000004888 barrier function Effects 0.000 claims description 10
- 235000011194 food seasoning agent Nutrition 0.000 claims description 8
- 239000001272 nitrous oxide Substances 0.000 claims description 7
- 230000008859 change Effects 0.000 claims description 5
- 230000003247 decreasing effect Effects 0.000 claims description 4
- 239000002356 single layer Substances 0.000 claims description 3
- 238000010586 diagram Methods 0.000 abstract 1
- 239000012528 membrane Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 220
- 230000002265 prevention Effects 0.000 description 8
- 239000012212 insulator Substances 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- 230000035699 permeability Effects 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 238000002425 crystallisation Methods 0.000 description 4
- 230000008025 crystallization Effects 0.000 description 4
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- VOSJXMPCFODQAR-UHFFFAOYSA-N ac1l3fa4 Chemical compound [SiH3]N([SiH3])[SiH3] VOSJXMPCFODQAR-UHFFFAOYSA-N 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 2
- 230000005281 excited state Effects 0.000 description 2
- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 238000009751 slip forming Methods 0.000 description 2
- VEDJZFSRVVQBIL-UHFFFAOYSA-N trisilane Chemical compound [SiH3][SiH2][SiH3] VEDJZFSRVVQBIL-UHFFFAOYSA-N 0.000 description 2
- 230000002950 deficient Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
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Abstract
Description
Claims (17)
- 第1透湿防止膜、
前記第1透湿防止膜上に形成される第2透湿防止膜、および
前記第2透湿防止膜上に形成される第3透湿防止膜を含み、前記第2透湿防止膜での酸素(O)の濃度は、前記第1透湿防止膜及び前記第3透湿防止膜の酸素の濃度よりも高い、透湿防止膜。 - 前記第2透湿防止膜が、前記第1透湿防止膜及び前記第3透湿防止膜に比べて窒素(N)の濃度が低い、請求項1に記載の透湿防止膜。
- 前記第2透湿防止膜のウェットエッチング速度(wet etch rate)が、前記第1透湿防止膜及び前記第3透湿防止膜のウェットエッチング速度よりも大きい、請求項1に記載の透湿防止膜。
- 前記第2透湿防止膜のウェットエッチング速度(wet etch rate)が、前記第1透湿防止膜及び前記第3透湿防止膜のウェットエッチング速度の10倍以上100倍以下の大きさである、請求項3に記載の透湿性防止膜。
- 前記第2透湿防止膜の厚さが、前記第1透湿防止膜及び前記第3透湿防止膜の厚さよりも薄い、請求項1に記載の透湿防止膜。
- 前記第1透湿防止膜と前記第2透湿防止膜の間に結晶化した層が形成されない、請求項1に記載の透湿防止膜。
- 前記第2透湿防止膜と前記第3透湿防止膜の間に結晶化した層が形成されない、請求項1に記載の透湿防止膜。
- 基板、
前記基板上に形成される発光部、および
前記発光部上に形成される透湿防止膜を含み、
前記透湿防止膜が、前記透湿防止膜の下部から上部まで膜内に含まれる酸素(O)の濃度は、漸次に増加した後に減少し、窒素(N)の濃度は、漸次に減少した後に増加する、有機発光素子。 - 前記透湿防止膜が、単一層で形成され、前記透湿防止膜の内部では、前記酸素の濃度と前記窒素の濃度が漸次的に変化する、請求項8に記載の有機発光素子。
- 化学気相堆積法で第1透湿防止膜を形成する第1透湿防止膜形成工程と、
前記第1透湿防止膜上に原子層堆積法で第2透湿防止膜を形成する第2透湿防止膜形成工程、および
前記第2透湿防止膜上に化学気相堆積法で第3透湿防止膜を形成する第3透湿防止膜形成工程を含む透湿防止膜の製造方法。 - 前記第1透湿防止膜〜前記第3透湿防止膜が、一つのチャンバー内で形成される、請求項10に記載の透湿防止膜の製造方法。
- 前記第2透湿防止膜が、シリコン(Si)を含むソースガスと亜酸化窒素(N2O)を含む第2反応ガスが反応して形成される、請求項10に記載の透湿防止膜の製造方法。
- 前記第1透湿防止膜及び前記第3透湿防止膜が、シリコン(Si)を含む前記ソースガスとアンモニア(NH3)および窒素(N2)を含む第1反応ガスが反応して形成される、請求項10に記載の透湿防止膜の製造方法。
- 前記第2透湿防止膜の堆積速度(deposiotion rate)が、前記第1透湿防止膜及び前記第3透湿防止膜の堆積速度よりも遅い、請求項10に記載の透湿防止膜の製造方法。
- 前記第2透湿防止膜の堆積速度(deposiotion rate)が、前記第1透湿防止膜及び前記第3透湿防止膜の堆積速度よりも4倍以上10倍以下遅い、請求項14に記載の透湿防止膜の製造方法。
- 前記第1透湿防止膜形成工程前にのみシーズニング(seasoning)工程をさらに含む請求項10に記載の透湿防止膜の製造方法。
- シリコンを含むソースガスとアンモニア(NH3)および窒素(N2)を含む第1反応ガスが反応して成膜され、前記シリコンを含むソースガスと亜酸化窒素(N2O)を含む第2反応ガスが反応して成膜され、前記シリコンを含むソースガスとアンモニア(NH3)および窒素(N2)を含む前記第1反応ガスが反応して成膜される、透湿防止膜の製造方法。
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1167746A (ja) * | 1997-07-02 | 1999-03-09 | Applied Materials Inc | Hdp−cvd装置内の粒子特性を改善するシーズニングプロセスにおける酸素対シランの比の制御 |
JPH11307262A (ja) * | 1998-04-15 | 1999-11-05 | Denso Corp | El素子 |
JP2001284042A (ja) * | 2000-03-31 | 2001-10-12 | Denso Corp | 有機el素子 |
JP2008153004A (ja) * | 2006-12-15 | 2008-07-03 | Konica Minolta Holdings Inc | 有機エレクトロルミネッセンス素子 |
JP2009278131A (ja) * | 2000-09-18 | 2009-11-26 | Tokyo Electron Ltd | 絶縁体の成膜方法 |
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KR20050029789A (ko) | 2003-09-23 | 2005-03-29 | 주식회사 엘리아테크 | 투습방지막을 구비한 유기이엘 패널 및 그의 제조방법 |
JP4425167B2 (ja) * | 2005-03-22 | 2010-03-03 | 富士フイルム株式会社 | ガスバリア性フィルム、基材フィルムおよび有機エレクトロルミネッセンス素子 |
JP4698310B2 (ja) * | 2005-07-11 | 2011-06-08 | 富士フイルム株式会社 | ガスバリア性フィルム、基材フィルムおよび有機エレクトロルミネッセンス素子 |
KR20110101518A (ko) | 2010-03-08 | 2011-09-16 | 박원석 | 투습방지기능을 구비한 플렉서블 기판과 플렉서블 유기전계발광표시장치 및 그 제조방법 |
KR20130117510A (ko) | 2012-04-18 | 2013-10-28 | 가부시키가이샤 가네카 | 무기막을 이용한 수분 투과 방지막의 제조 방법, 무기막을 이용한 수분 투과 방지막 및 전기, 전자 봉지 소자 |
US9449809B2 (en) * | 2012-07-20 | 2016-09-20 | Applied Materials, Inc. | Interface adhesion improvement method |
KR20140097940A (ko) * | 2013-01-30 | 2014-08-07 | 삼성디스플레이 주식회사 | 실리콘 산화물과 실리콘 질화물을 포함하는 배리어층을 구비한 tft기판, 상기 tft 기판을 포함하는 유기 발광 표시 장치 및 상기 tft 기판의 제조 방법 |
US9263359B2 (en) * | 2013-02-27 | 2016-02-16 | Lotus Applied Technology, Llc | Mixed metal-silicon-oxide barriers |
JP6139196B2 (ja) * | 2013-03-15 | 2017-05-31 | 株式会社ジャパンディスプレイ | 有機エレクトロルミネッセンス表示装置及び有機エレクトロルミネッセンス表示装置の製造方法 |
CN104078599B (zh) * | 2013-03-29 | 2016-08-31 | 海洋王照明科技股份有限公司 | 有机电致发光器件及其制备方法 |
KR101947796B1 (ko) * | 2013-06-29 | 2019-04-22 | 아익스트론 에스이 | 고성능 코팅들을 증착하기 위한 방법 및 캡슐화된 전자 디바이스들 |
KR102316288B1 (ko) | 2015-02-04 | 2021-10-25 | 주성엔지니어링(주) | 투습 방지막과 그 제조 방법 |
KR102293494B1 (ko) | 2015-04-27 | 2021-08-26 | 주성엔지니어링(주) | 투습 방지막과 그 제조 방법 |
CN105185923A (zh) * | 2015-08-25 | 2015-12-23 | 张家港康得新光电材料有限公司 | 水汽阻隔膜及其制作方法、柔性显示器件及其制作方法 |
-
2017
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2018
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1167746A (ja) * | 1997-07-02 | 1999-03-09 | Applied Materials Inc | Hdp−cvd装置内の粒子特性を改善するシーズニングプロセスにおける酸素対シランの比の制御 |
JPH11307262A (ja) * | 1998-04-15 | 1999-11-05 | Denso Corp | El素子 |
JP2001284042A (ja) * | 2000-03-31 | 2001-10-12 | Denso Corp | 有機el素子 |
JP2009278131A (ja) * | 2000-09-18 | 2009-11-26 | Tokyo Electron Ltd | 絶縁体の成膜方法 |
JP2008153004A (ja) * | 2006-12-15 | 2008-07-03 | Konica Minolta Holdings Inc | 有機エレクトロルミネッセンス素子 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022153137A1 (ja) * | 2021-01-14 | 2022-07-21 | 株式会社半導体エネルギー研究所 | 表示装置 |
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US11011731B2 (en) | 2021-05-18 |
KR20180080901A (ko) | 2018-07-13 |
US20190355934A1 (en) | 2019-11-21 |
WO2018128344A1 (ko) | 2018-07-12 |
TWI761418B (zh) | 2022-04-21 |
CN110192290B (zh) | 2022-04-15 |
CN110192290A (zh) | 2019-08-30 |
TW201841407A (zh) | 2018-11-16 |
JP7299155B2 (ja) | 2023-06-27 |
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