JP7299155B2 - 透湿防止膜とその製造方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000012528 membrane Substances 0.000 title description 7
- 230000003449 preventive effect Effects 0.000 claims description 120
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 48
- 238000000034 method Methods 0.000 claims description 47
- 230000002265 prevention Effects 0.000 claims description 44
- 230000004888 barrier function Effects 0.000 claims description 43
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 34
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 22
- 239000010703 silicon Substances 0.000 claims description 22
- 229910052710 silicon Inorganic materials 0.000 claims description 21
- 239000007789 gas Substances 0.000 claims description 19
- 229910052757 nitrogen Inorganic materials 0.000 claims description 18
- 239000012495 reaction gas Substances 0.000 claims description 18
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 17
- 238000000151 deposition Methods 0.000 claims description 17
- 230000008021 deposition Effects 0.000 claims description 17
- 239000001301 oxygen Substances 0.000 claims description 17
- 229910052760 oxygen Inorganic materials 0.000 claims description 17
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 16
- 238000005229 chemical vapour deposition Methods 0.000 claims description 16
- 229910021529 ammonia Inorganic materials 0.000 claims description 12
- 238000000231 atomic layer deposition Methods 0.000 claims description 12
- 238000001039 wet etching Methods 0.000 claims description 10
- 235000011194 food seasoning agent Nutrition 0.000 claims description 8
- 239000001272 nitrous oxide Substances 0.000 claims description 6
- 230000003247 decreasing effect Effects 0.000 claims 2
- 239000010408 film Substances 0.000 description 184
- 239000010410 layer Substances 0.000 description 40
- 230000008569 process Effects 0.000 description 25
- 239000000758 substrate Substances 0.000 description 20
- 239000012212 insulator Substances 0.000 description 6
- 238000002425 crystallisation Methods 0.000 description 5
- 230000008025 crystallization Effects 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000035699 permeability Effects 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- VOSJXMPCFODQAR-UHFFFAOYSA-N ac1l3fa4 Chemical compound [SiH3]N([SiH3])[SiH3] VOSJXMPCFODQAR-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 2
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000005281 excited state Effects 0.000 description 2
- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 230000002123 temporal effect Effects 0.000 description 2
- 229910007264 Si2H6 Inorganic materials 0.000 description 1
- 229910005096 Si3H8 Inorganic materials 0.000 description 1
- 238000003917 TEM image Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- VEDJZFSRVVQBIL-UHFFFAOYSA-N trisilane Chemical compound [SiH3][SiH2][SiH3] VEDJZFSRVVQBIL-UHFFFAOYSA-N 0.000 description 1
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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- C23C16/345—Silicon nitride
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- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
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- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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Description
Claims (5)
- 化学気相堆積法で第1透湿防止膜を形成する第1透湿防止膜形成工程と、
前記第1透湿防止膜上に原子層堆積法で第2透湿防止膜を形成する第2透湿防止膜形成工程、および
前記第2透湿防止膜上に化学気相堆積法で第3透湿防止膜を形成する第3透湿防止膜形成工程を含み、
前記第2透湿防止膜での酸素(O)の濃度を、前記第1透湿防止膜及び前記第3透湿防止膜それぞれの酸素の濃度よりも高くし、
酸素の濃度を、第1透湿防止膜の下部から第2透湿防止膜にわたって漸次増加させるとともに、第2透湿防止膜から第3透湿防止膜の上部にわたって漸次減少させ、
前記第2透湿防止膜での窒素(N)の濃度を、前記第1透湿防止膜及び前記第3透湿防止膜それぞれの窒素の濃度よりも低くし、
窒素の濃度を、第1透湿防止膜の下部から第2透湿防止膜にわたって漸次減少させるとともに、第2透湿防止膜から第3透湿防止膜の上部にわたって漸次増加させ、
前記第2透湿防止膜の厚さを前記第1透湿防止膜及び前記第3透湿防止膜の厚さより薄くし、
前記第2透湿防止膜のウェットエッチング速度(wet etch rate)は、前記第1透湿防止膜及び前記第3透湿防止膜のウェットエッチング速度よりも大きく、
前記第2透湿防止膜を、前記第1透湿防止膜及び前記第3透湿防止膜を形成する際より弱い強度のプラズマで形成し、
前記第2透湿防止膜が、シリコン(Si)を含むソースガスと亜酸化窒素(N 2 O)を含む第2反応ガスが反応して形成され、
前記第1透湿防止膜及び前記第3透湿防止膜が、シリコン(Si)を含むソースガスとアンモニア(NH 3 )および窒素(N 2 )を含む第1反応ガスが反応して形成される、
透湿防止膜の製造方法。 - 前記第1透湿防止膜~前記第3透湿防止膜が、一つのチャンバー内で形成される、請求項1に記載の透湿防止膜の製造方法。
- 前記第2透湿防止膜の堆積速度(deposiotion rate)が、前記第1透湿防止膜及び前記第3透湿防止膜の堆積速度よりも遅い、請求項1に記載の透湿防止膜の製造方法。
- 前記第2透湿防止膜の堆積速度(deposiotion rate)が、前記第1透湿防止膜及び前記第3透湿防止膜の堆積速度よりも4倍以上10倍以下遅い、請求項3に記載の透湿防止膜の製造方法。
- 前記第1透湿防止膜形成工程前にのみシーズニング(seasoning)工程をさらに含む請求項1に記載の透湿防止膜の製造方法。
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KR1020170002003A KR20180080901A (ko) | 2017-01-05 | 2017-01-05 | 투습 방지막과 그 제조 방법 |
PCT/KR2018/000019 WO2018128344A1 (ko) | 2017-01-05 | 2018-01-02 | 투습 방지막과 그 제조 방법 |
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JP (1) | JP7299155B2 (ja) |
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CN (1) | CN110192290B (ja) |
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KR101947796B1 (ko) * | 2013-06-29 | 2019-04-22 | 아익스트론 에스이 | 고성능 코팅들을 증착하기 위한 방법 및 캡슐화된 전자 디바이스들 |
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JP2001284042A (ja) | 2000-03-31 | 2001-10-12 | Denso Corp | 有機el素子 |
JP2009278131A (ja) | 2000-09-18 | 2009-11-26 | Tokyo Electron Ltd | 絶縁体の成膜方法 |
JP2008153004A (ja) | 2006-12-15 | 2008-07-03 | Konica Minolta Holdings Inc | 有機エレクトロルミネッセンス素子 |
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