JP2020509573A5 - - Google Patents

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Publication number
JP2020509573A5
JP2020509573A5 JP2019530428A JP2019530428A JP2020509573A5 JP 2020509573 A5 JP2020509573 A5 JP 2020509573A5 JP 2019530428 A JP2019530428 A JP 2019530428A JP 2019530428 A JP2019530428 A JP 2019530428A JP 2020509573 A5 JP2020509573 A5 JP 2020509573A5
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JP
Japan
Prior art keywords
nitride
rare earth
capping
removable
less
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JP2019530428A
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English (en)
Japanese (ja)
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JP2020509573A (ja
JP7131835B2 (ja
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Priority claimed from PCT/IB2017/057718 external-priority patent/WO2018104899A1/en
Publication of JP2020509573A publication Critical patent/JP2020509573A/ja
Publication of JP2020509573A5 publication Critical patent/JP2020509573A5/ja
Application granted granted Critical
Publication of JP7131835B2 publication Critical patent/JP7131835B2/ja
Expired - Fee Related legal-status Critical Current
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JP2019530428A 2016-12-07 2017-12-07 希土類窒化物構造体およびデバイスならびに不動態化キャッピングを除去するための方法 Expired - Fee Related JP7131835B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP16202663.7 2016-12-07
EP16202663 2016-12-07
PCT/IB2017/057718 WO2018104899A1 (en) 2016-12-07 2017-12-07 Rare earth nitride structures and devices and method for removing a passivating capping

Publications (3)

Publication Number Publication Date
JP2020509573A JP2020509573A (ja) 2020-03-26
JP2020509573A5 true JP2020509573A5 (cg-RX-API-DMAC10.html) 2021-01-21
JP7131835B2 JP7131835B2 (ja) 2022-09-06

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JP2019530428A Expired - Fee Related JP7131835B2 (ja) 2016-12-07 2017-12-07 希土類窒化物構造体およびデバイスならびに不動態化キャッピングを除去するための方法

Country Status (6)

Country Link
US (1) US11217743B2 (cg-RX-API-DMAC10.html)
EP (1) EP3552231A1 (cg-RX-API-DMAC10.html)
JP (1) JP7131835B2 (cg-RX-API-DMAC10.html)
KR (1) KR20190088556A (cg-RX-API-DMAC10.html)
CN (1) CN110073477A (cg-RX-API-DMAC10.html)
WO (1) WO2018104899A1 (cg-RX-API-DMAC10.html)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12362225B2 (en) * 2018-06-22 2025-07-15 Indian Institute Of Technology Bombay Method for fabricating germanium/silicon on insulator in radio frequency sputter system
CN114069389B (zh) * 2021-11-16 2024-07-09 深圳斯玛特传感技术有限公司 一种量子级联激光器

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11251784A (ja) * 1997-12-04 1999-09-17 Toppan Printing Co Ltd 電磁波遮蔽材及びその製造方法
JP2003151987A (ja) * 2001-11-19 2003-05-23 Mitsubishi Heavy Ind Ltd 半導体基板、及び、半導体基板の製造方法
JP2009238415A (ja) * 2008-03-26 2009-10-15 Kobe Univ 深紫外蛍光薄膜および深紫外蛍光薄膜を用いたランプ
US8445979B2 (en) 2009-09-11 2013-05-21 Samsung Electronics Co., Ltd. Magnetic memory devices including magnetic layers separated by tunnel barriers
US20140335666A1 (en) * 2013-05-13 2014-11-13 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Growth of High-Performance III-Nitride Transistor Passivation Layer for GaN Electronics
US9139934B2 (en) * 2014-01-23 2015-09-22 Translucent, Inc. REN semiconductor layer epitaxially grown on REAIN/REO buffer on Si substrate
CN103746009A (zh) * 2014-01-23 2014-04-23 通用光伏能源(烟台)有限公司 一种太阳能电池的钝化层及其制备工艺
EP3127146A4 (en) 2014-04-02 2017-11-08 Natali, Franck Doped rare earth nitride materials and devices comprising same
US10373752B2 (en) * 2014-04-02 2019-08-06 Franck Natali Magnetic materials and devices comprising rare earth nitrides
US20160181093A1 (en) 2014-12-19 2016-06-23 Rytis Dargis Iii-n epitaxy on multilayer buffer with protective top layer
US10043871B1 (en) * 2017-04-06 2018-08-07 Ecole Polytechnique Federale De Lausanne (Epfl) Rare earth nitride and group III-nitride structure or device

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