JP2020509239A - アンプルからのフラックスを増加させるための装置 - Google Patents
アンプルからのフラックスを増加させるための装置 Download PDFInfo
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- JP2020509239A JP2020509239A JP2019548066A JP2019548066A JP2020509239A JP 2020509239 A JP2020509239 A JP 2020509239A JP 2019548066 A JP2019548066 A JP 2019548066A JP 2019548066 A JP2019548066 A JP 2019548066A JP 2020509239 A JP2020509239 A JP 2020509239A
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- ampoule
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- 239000003708 ampul Substances 0.000 title claims abstract description 48
- 230000004907 flux Effects 0.000 title description 4
- 239000007788 liquid Substances 0.000 claims abstract description 31
- 239000002243 precursor Substances 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 14
- 239000004065 semiconductor Substances 0.000 claims abstract description 8
- 238000004519 manufacturing process Methods 0.000 claims abstract description 6
- 239000007789 gas Substances 0.000 claims description 28
- 239000012705 liquid precursor Substances 0.000 claims description 10
- 239000012159 carrier gas Substances 0.000 claims description 9
- 239000012530 fluid Substances 0.000 claims description 9
- 238000004891 communication Methods 0.000 claims description 8
- PPWNCLVNXGCGAF-UHFFFAOYSA-N 3,3-dimethylbut-1-yne Chemical group CC(C)(C)C#C PPWNCLVNXGCGAF-UHFFFAOYSA-N 0.000 claims description 2
- 230000005587 bubbling Effects 0.000 claims description 2
- 239000000463 material Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000005494 condensation Effects 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012800 visualization Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B7/00—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas
- B05B7/24—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas with means, e.g. a container, for supplying liquid or other fluent material to a discharge device
- B05B7/2489—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas with means, e.g. a container, for supplying liquid or other fluent material to a discharge device an atomising fluid, e.g. a gas, being supplied to the discharge device
- B05B7/2491—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas with means, e.g. a container, for supplying liquid or other fluent material to a discharge device an atomising fluid, e.g. a gas, being supplied to the discharge device characterised by the means for producing or supplying the atomising fluid, e.g. air hoses, air pumps, gas containers, compressors, fans, ventilators, their drives
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B7/00—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas
- B05B7/0075—Nozzle arrangements in gas streams
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
- B65D—CONTAINERS FOR STORAGE OR TRANSPORT OF ARTICLES OR MATERIALS, e.g. BAGS, BARRELS, BOTTLES, BOXES, CANS, CARTONS, CRATES, DRUMS, JARS, TANKS, HOPPERS, FORWARDING CONTAINERS; ACCESSORIES, CLOSURES, OR FITTINGS THEREFOR; PACKAGING ELEMENTS; PACKAGES
- B65D1/00—Containers having bodies formed in one piece, e.g. by casting metallic material, by moulding plastics, by blowing vitreous material, by throwing ceramic material, by moulding pulped fibrous material, by deep-drawing operations performed on sheet material
- B65D1/09—Ampoules
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
- C23C16/4482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material by bubbling of carrier gas through liquid source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45568—Porous nozzles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Nozzles (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Abstract
Description
Claims (15)
- キャビティを囲む底部、側壁、およびリッドを有する容器と、
前記キャビティと流体連結する入り口ポートであって、前記キャビティ内に位置する前記入り口ポートの端部にシャワーヘッドを有し、液体が前記容器に存在するときにガスの流れが前記液体の表面に対して垂直にならないように、前記シャワーヘッドがガスの前記流れを方向付ける少なくとも2つの角度付きノズルを備える、入り口ポートと、
前記キャビティと流体連結する出口ポートと、
を備える、半導体製造前駆体のためのアンプル。 - 前記ノズルが、液体が存在するときに、前記液体の前記表面に直交する線に対して測定して、独立して約2°〜約25°の範囲に角度付けされている、請求項1に記載のアンプル。
- 前記ノズルが、液体が存在するときに、前記液体の前記表面に直交する線に対して測定して、独立して約5°〜約7°の範囲に角度付けされている、請求項1に記載のアンプル。
- 2〜4個の範囲のノズルがある、請求項1に記載のアンプル。
- 3つのノズルがある、請求項1に記載のアンプル。
- 前記リッドが前記容器の前記側壁および底部と一体的に形成されている、請求項1から5までのいずれか1項に記載のアンプル。
- 前記リッドが前記底部および側壁とは別個の構成要素である、請求項1から5までのいずれか1項に記載のアンプル。
- 前記リッドが取り外し可能なボルトを使用して、前記容器の前記側壁に接続されている、請求項7に記載のアンプル。
- 前記リッドと前記側壁との間に配置されたOリングをさらに備える、請求項8に記載のアンプル。
- 前記キャビティ内に液体前駆体をさらに含む、請求項1から5までのいずれか1項に記載のアンプル。
- 前記液体前駆体がジコバルトヘキサカルボニルtert−ブチルアセチレンを含む、請求項10に記載のアンプル。
- ガスの前記流れを提供するためのガス源をさらに備える、請求項10に記載のアンプル。
- ガスの前記流れが、バブリングすることなく前記液体前駆体の液体/ガス界面を乱すのに十分である、請求項12に記載のアンプル。
- 前記液体/ガス界面を乱すことにより前記液体前駆体の前記表面にディンプルが形成され、前記ディンプルが約1mm以下の深さを有する、請求項13に記載のアンプル。
- 内部に液体前駆体を有する前駆体アンプルの入り口ポートを通してキャリアガスを流すステップと、
前記入り口ポートの端部にシャワーヘッドを備える前記アンプル内でキャリアガスの前記流れを方向付けるステップであって、前記シャワーヘッドが前記液体前駆体の表面に対して垂直ではない角度でガスの前記流れを方向付ける少なくとも2つの角度付きノズルを備える、ステップと、
出口ポートを通して前記アンプルから前記キャリアガスおよび前駆体を流出させるステップと、
を含む、前駆体の流れを提供するための方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2022026852A JP2022075691A (ja) | 2017-03-03 | 2022-02-24 | アンプルからのフラックスを増加させるための装置 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201762466669P | 2017-03-03 | 2017-03-03 | |
US62/466,669 | 2017-03-03 | ||
PCT/US2018/020601 WO2018160931A1 (en) | 2017-03-03 | 2018-03-02 | Apparatus for increasing flux from an ampoule |
Related Child Applications (1)
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JP2022026852A Division JP2022075691A (ja) | 2017-03-03 | 2022-02-24 | アンプルからのフラックスを増加させるための装置 |
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Publication Number | Publication Date |
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JP2020509239A true JP2020509239A (ja) | 2020-03-26 |
JP7289789B2 JP7289789B2 (ja) | 2023-06-12 |
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JP2022026852A Pending JP2022075691A (ja) | 2017-03-03 | 2022-02-24 | アンプルからのフラックスを増加させるための装置 |
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JP2022026852A Pending JP2022075691A (ja) | 2017-03-03 | 2022-02-24 | アンプルからのフラックスを増加させるための装置 |
Country Status (7)
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US (2) | US11059061B2 (ja) |
EP (1) | EP3589776A4 (ja) |
JP (2) | JP7289789B2 (ja) |
KR (3) | KR20240005188A (ja) |
CN (2) | CN115044888A (ja) |
TW (1) | TWI719284B (ja) |
WO (1) | WO2018160931A1 (ja) |
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KR20210155812A (ko) * | 2019-05-31 | 2021-12-23 | 어플라이드 머티어리얼스, 인코포레이티드 | 기판들 상에 막들을 형성하기 위한 방법들 및 시스템들 |
US11502160B2 (en) * | 2020-03-02 | 2022-11-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and system for forming metal-insulator-metal capacitors |
US11587873B2 (en) | 2020-05-06 | 2023-02-21 | Applied Materials, Inc. | Binary metal liner layers |
US11270911B2 (en) | 2020-05-06 | 2022-03-08 | Applied Materials Inc. | Doping of metal barrier layers |
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JP5728772B2 (ja) * | 2011-05-31 | 2015-06-03 | 株式会社ブイ・テクノロジー | 原料ガス発生装置 |
JP5761067B2 (ja) * | 2012-02-13 | 2015-08-12 | 東京エレクトロン株式会社 | ガス供給装置及び熱処理装置 |
US10480070B2 (en) * | 2016-05-12 | 2019-11-19 | Versum Materials Us, Llc | Delivery container with flow distributor |
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2018
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Patent Citations (2)
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US20150053134A1 (en) * | 2012-03-28 | 2015-02-26 | UNITEX Co., LTD | Source container and vapour-deposition reactor |
JP2016223008A (ja) * | 2015-05-13 | 2016-12-28 | エア プロダクツ アンド ケミカルズ インコーポレイテッドAir Products And Chemicals Incorporated | 堆積プロセスにおける化学前駆体のための容器 |
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EP3589776A4 (en) | 2020-11-11 |
US20180250695A1 (en) | 2018-09-06 |
CN110475905A (zh) | 2019-11-19 |
KR20240005188A (ko) | 2024-01-11 |
US11628456B2 (en) | 2023-04-18 |
KR20210148405A (ko) | 2021-12-07 |
US20210308703A1 (en) | 2021-10-07 |
TW201834935A (zh) | 2018-10-01 |
EP3589776A1 (en) | 2020-01-08 |
WO2018160931A1 (en) | 2018-09-07 |
US11059061B2 (en) | 2021-07-13 |
CN115044888A (zh) | 2022-09-13 |
JP7289789B2 (ja) | 2023-06-12 |
TWI719284B (zh) | 2021-02-21 |
JP2022075691A (ja) | 2022-05-18 |
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