JP6865231B2 - 堆積後のガス管内部の残留前駆体を除去する装置および方法 - Google Patents
堆積後のガス管内部の残留前駆体を除去する装置および方法 Download PDFInfo
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- 239000002243 precursor Substances 0.000 title description 50
- 238000000034 method Methods 0.000 title description 9
- 230000008021 deposition Effects 0.000 title description 4
- 239000003708 ampul Substances 0.000 claims description 131
- 239000012530 fluid Substances 0.000 claims description 34
- 238000011144 upstream manufacturing Methods 0.000 claims description 20
- 230000000903 blocking effect Effects 0.000 claims description 15
- 238000003466 welding Methods 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 20
- 239000007788 liquid Substances 0.000 description 5
- 125000002524 organometallic group Chemical group 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 239000012159 carrier gas Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 238000010926 purge Methods 0.000 description 4
- 238000005137 deposition process Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- PPWNCLVNXGCGAF-UHFFFAOYSA-N 3,3-dimethylbut-1-yne Chemical group CC(C)(C)C#C PPWNCLVNXGCGAF-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4402—Reduction of impurities in the source gas
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K31/00—Actuating devices; Operating means; Releasing devices
- F16K31/12—Actuating devices; Operating means; Releasing devices actuated by fluid
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K31/00—Actuating devices; Operating means; Releasing devices
- F16K31/44—Mechanical actuating means
- F16K31/60—Handles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/2931—Diverse fluid containing pressure systems
- Y10T137/3115—Gas pressure storage over or displacement of liquid
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Engineering & Computer Science (AREA)
- Chemical Vapour Deposition (AREA)
Description
Claims (15)
- 外側表面および内側表面を有するアンプルリッドと、
前記アンプルリッドの前記外側表面に接続されたバルブクラスタであって、
前記アンプルリッドを介した流体連通を可能にするように前記アンプルリッドに接続された入り口管、
前記アンプルリッドを介した流体連通を可能にするように前記アンプルリッドに接続された出口管、
前記入り口管と流体連通する第1の入り口バルブ、
前記入り口管と流体連通し、前記第1の入り口バルブの上流にある第2の入り口バルブ、
前記出口管と流体連通する第1の出口バルブ、
前記出口管と流体連通し、前記第1の出口バルブの下流にある第2の出口バルブ、
前記第1の入り口バルブおよび前記第1の出口バルブと流体連通するバイパス管、ならびに
前記バイパス管と流体連通するバイパスバルブ、
を含むバルブクラスタと、
を備える装置。 - 前記第1の入り口バルブが空気圧バルブである、請求項1に記載の装置。
- 前記の第1の出口バルブが空気圧バルブである、請求項1に記載の装置。
- 前記第2の入り口バルブがマニュアルバルブである、請求項1に記載の装置。
- 前記第2の出口バルブがマニュアルバルブである、請求項1に記載の装置。
- 前記バルブクラスタが前記アンプルリッドの前記外側表面に溶接されている、請求項1に記載の装置。
- 前記バルブクラスタが前記アンプルリッドの前記外側表面にボルトで固定されている、請求項1に記載の装置。
- アンプルであって、
底部を有するアンプルベースであり、前記底部から延在する側壁が前記アンプルの内部を形成する、アンプルベースと、
外側表面および内側表面を有するアンプルリッドであり、前記アンプルの前記内部を囲む前記アンプルベースの前記側壁の頂部端に接続された、アンプルリッドと、
外側端部および内側端部を有する入り口管であり、前記アンプルの前記内部と流体連通する、入り口管と、
外側端部および内側端部を有する出口管であり、前記アンプルの前記内部と流体連通する、前記出口管と、
前記入り口管と流体連通する第1の入り口バルブであり、前記アンプルリッドの上流にある、空気圧バルブである第1の入り口バルブと、
前記入り口管と流体連通し、前記第1の入り口バルブの上流にある、前記第1の入り口バルブから離間された第2の入り口バルブであり、マニュアルバルブである、第2の入り口バルブと、
前記出口管と流体連通する第1の出口バルブであり、前記アンプルリッドの下流にある、空気圧バルブである、第1の出口バルブと、
前記出口管と流体連通し、前記第1の出口バルブの下流にある、前記第1の出口バルブから離間された第2の出口バルブであり、マニュアルバルブである、第2の出口バルブと、
前記第1の入り口バルブおよび前記第1の出口バルブと流体連通するバイパス管と、
前記バイパス管と流体連通するバイパスバルブと、
を備える、アンプル。 - 前記バイパスバルブが空気圧バルブである、請求項8に記載のアンプル。
- 前記入り口管の前記外側端部における入り口遮断部であって、前記入り口管と流体連通する入り口遮断部をさらに備える、請求項8に記載のアンプル。
- 前記出口管の前記外側端部における出口遮断部であって、前記出口管と流体連通する出口遮断部をさらに備える、請求項8に記載のアンプル。
- 前記入り口管および前記出口管が溶接またはボルトの1つまたは複数によって前記アンプルリッドに接続されている、請求項8のアンプル。
- 前記入り口管が前記アンプルリッドの前記内側表面からある距離だけ前記アンプルリッドを貫いて延在する、請求項8に記載のアンプル。
- 前記アンプルリッドの前記内側表面上の前記入り口管の端部にスパージャをさらに備える、請求項13に記載のアンプル。
- アンプルであって、
底部を有するアンプルベースであり、前記底部から延在する側壁が前記アンプルの内部を形成する、アンプルベースと、
外側表面および内側表面を有するアンプルリッドであり、前記アンプルの前記内部を囲む前記アンプルベースの前記側壁の頂部端に接続された、アンプルリッドと、
入り口遮断部を有する外側端部、および前記アンプルリッドの前記内側表面からある距離だけ離間された前記アンプルの前記内部内の内側端部を有する入り口管であり、前記アンプルの前記内部と流体連通する入り口管で、前記内側端部に接続され前記内側端部と流体連通するスパージャを有する、入り口管と、
出口遮断部を有する外側端部および内側端部を有する出口管であり、前記アンプルの前記内部と流体連通する、出口管と、
前記入り口管と流体連通する第1の入り口バルブであり、前記アンプルリッドの上流にある、空気圧バルブである第1の入り口バルブと、
前記入り口管と流体連通し、前記第1の入り口バルブの上流にある、前記第1の入り口バルブから離間された第2の入り口バルブであり、マニュアルバルブである、第2の入り口バルブと、
前記出口管と流体連通する第1の出口バルブであり、前記アンプルリッドの下流にある、空気圧バルブである、第1の出口バルブと、
前記出口管と流体連通し、前記第1の出口バルブの下流にある、前記第1の出口バルブから離間された第2の出口バルブであり、マニュアルバルブである、第2の出口バルブと、
前記第1の入り口バルブおよび前記第1の出口バルブと流体連通するバイパス管と、
前記バイパス管と流体連通するバイパスバルブであり、空気圧バルブである、バイパスバルブと、
を備える、アンプル。
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US201662313976P | 2016-03-28 | 2016-03-28 | |
US62/313,976 | 2016-03-28 | ||
PCT/US2017/024482 WO2017172724A1 (en) | 2016-03-28 | 2017-03-28 | Apparatus and methods to remove residual precursor inside gas lines post-deposition |
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JP6865231B2 true JP6865231B2 (ja) | 2021-04-28 |
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US (1) | US10752990B2 (ja) |
JP (1) | JP6865231B2 (ja) |
KR (1) | KR102219697B1 (ja) |
CN (2) | CN117926220A (ja) |
WO (1) | WO2017172724A1 (ja) |
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WO2021080726A1 (en) | 2019-10-21 | 2021-04-29 | Applied Materials, Inc. | Method of depositing layers |
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DE4206660A1 (de) * | 1992-03-03 | 1993-09-09 | Siemens Ag | Sicherheitseinrichtung gegen ueberdruckversagen eines kernreaktor-druckbehaelters |
US5413671A (en) * | 1993-08-09 | 1995-05-09 | Advanced Micro Devices, Inc. | Apparatus and method for removing deposits from an APCVD system |
US6033479A (en) * | 1998-04-22 | 2000-03-07 | Applied Materials, Inc. | Process gas delivery system for CVD having a cleaning subsystem |
US7334708B2 (en) | 2001-07-16 | 2008-02-26 | L'air Liquide, Societe Anonyme A Directoire Et Conseil De Surveillance Pour L'etude Et L'exploitation Des Procedes Georges Claude | Integral blocks, chemical delivery systems and methods for delivering an ultrapure chemical |
JP4021721B2 (ja) * | 2002-07-30 | 2007-12-12 | アプライド マテリアルズ インコーポレイテッド | 液体供給構造 |
JP2005322668A (ja) * | 2004-05-06 | 2005-11-17 | Renesas Technology Corp | 成膜装置および成膜方法 |
US7562672B2 (en) * | 2006-03-30 | 2009-07-21 | Applied Materials, Inc. | Chemical delivery apparatus for CVD or ALD |
US8951478B2 (en) | 2006-03-30 | 2015-02-10 | Applied Materials, Inc. | Ampoule with a thermally conductive coating |
JP5074073B2 (ja) * | 2007-03-30 | 2012-11-14 | 東京エレクトロン株式会社 | 粉体状ソース供給系の洗浄方法、記憶媒体、基板処理システム及び基板処理方法 |
US20090214777A1 (en) * | 2008-02-22 | 2009-08-27 | Demetrius Sarigiannis | Multiple ampoule delivery systems |
US8137468B2 (en) | 2008-03-17 | 2012-03-20 | Applied Materials, Inc. | Heated valve manifold for ampoule |
JP5720406B2 (ja) * | 2011-05-10 | 2015-05-20 | 東京エレクトロン株式会社 | ガス供給装置、熱処理装置、ガス供給方法及び熱処理方法 |
US20130019960A1 (en) | 2011-07-22 | 2013-01-24 | Applied Materials, Inc. | Reactant Delivery System For ALD/CVD Processes |
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- 2017-03-28 WO PCT/US2017/024482 patent/WO2017172724A1/en active Application Filing
- 2017-03-28 CN CN202311838381.6A patent/CN117926220A/zh active Pending
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JP2019513894A (ja) | 2019-05-30 |
CN117926220A (zh) | 2024-04-26 |
US20170275754A1 (en) | 2017-09-28 |
WO2017172724A1 (en) | 2017-10-05 |
CN109477216A (zh) | 2019-03-15 |
US10752990B2 (en) | 2020-08-25 |
KR20180119709A (ko) | 2018-11-02 |
KR102219697B1 (ko) | 2021-02-23 |
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