NL2008909C2 - Diffusion or chemical vapour deposition (cvd) system. - Google Patents

Diffusion or chemical vapour deposition (cvd) system. Download PDF

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Publication number
NL2008909C2
NL2008909C2 NL2008909A NL2008909A NL2008909C2 NL 2008909 C2 NL2008909 C2 NL 2008909C2 NL 2008909 A NL2008909 A NL 2008909A NL 2008909 A NL2008909 A NL 2008909A NL 2008909 C2 NL2008909 C2 NL 2008909C2
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Netherlands
Prior art keywords
gas
process chamber
end portion
contact area
gas inlet
Prior art date
Application number
NL2008909A
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Dutch (nl)
Inventor
Malcolm Harris
Jan Bart Rem
Peter Roelf Venema
Original Assignee
Tempress Ip B V
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Application filed by Tempress Ip B V filed Critical Tempress Ip B V
Priority to NL2008909A priority Critical patent/NL2008909C2/en
Application granted granted Critical
Publication of NL2008909C2 publication Critical patent/NL2008909C2/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45519—Inert gas curtains
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4409—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber characterised by sealing means

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)

Description

Diffusion or chemical vapour deposition (CVD) system Field of the invention 5 The invention relates to an atmospheric diffusion or chemical vapour deposition (CVD) system comprising a horizontal process chamber, preferably a tubular process chamber, for treating substrates, having a circumferential wall, a sealable first end portion allowing access to the process chamber, and a second end portion, sealing means for sealing the first end portion during use, wherein upon sealing a contact area 10 is present between the first end portion and the sealing means, a primary gas inlet for introducing a primary gas into the process chamber, the primary gas comprising a process gas, a secondary gas inlet for introducing a secondary gas into the process chamber, and a gas outlet allowing gas to exit the process chamber.
15 Background of the invention
Such a system is known. In the known system the primary gas inlet and the gas outlet are positioned in such a way that process gas flowing from the gas inlet to the gas outlet past the substrates sufficiently contacts the substrates. A pipe projecting into 20 the process chamber is often used for allowing the process gas to exit the process chamber.
A disadvantage of the known system is that the contact area is relatively vulnerable to the deposition of reaction products. When reaction products deposit in the 25 vicinity of this contact area an improper seal between the door and the process chamber may occur, or the door may stick to the process chamber preventing the door from being opened. Especially the occurrence of an improper seal can have severe consequences due to the leaking away of poisonous gases to the surroundings of the diffusion system or due to the diffusion of an ambient gas into the process chamber, 30 which could adversely affect the process conditions.
2
Summary of the invention
Hereto the system according to the invention is characterized in that the first end portion or the sealing means are provided with flow distribution means for distributing 5 the secondary gas from the secondary gas inlet towards the contact area. The flow distribution means direct the secondary gas, e.g. a purge gas, towards the contact area, preferably directly, thereby locally diluting the primary gas or largely inhibiting it from reaching the contact area, thus preventing the deposition of unwanted products there.
10 An embodiment relates to a system wherein the secondary gas inlet is comprised by the sealing means, and the flow distribution means comprise a deflector plate positioned at a distance from the secondary gas inlet for deflecting the secondary gas flow along the inner surface of the sealing means towards the contact area during use. A plate-like deflector is relatively efficient in directing the secondary flow towards the 15 contact area.
An embodiment relates to a system wherein the deflector plate is comprised by a baffle.
20 An embodiment relates to a system wherein the deflector plate is attached to the sealing means. If the sealing means are removed, the deflector plate is removed simultaneously, allowing easy access to the process chamber.
An embodiment relates to a system wherein the primary gas inlet is comprised by 25 the second end portion. An even flow distribution over the substrates is obtained in this way.
An embodiment relates to a system wherein the gas outlet is comprised by the circumferential wall and is positioned downstream of the deflector plate with respect to 30 the secondary gas flow and downstream of the substrates with respect to the primary gas flow during use. Positioning the gas outlet in this way causes the primary gas flow to be removed from the process chamber as much as possible before reaching the contact area.
3
An embodiment relates to a system wherein the gas outlet is comprised by a pipe projecting into the process chamber through the second end portion such that the gas outlet is positioned downstream of the deflector plate with respect to the secondary gas 5 flow and downstream of the substrates with respect to the primary gas flow during use.
An embodiment relates to a system wherein the gas outlet is comprised by the second end portion. In this way the primary gas is prevented from reaching the contact area as much as possible, as it is immediately sucked away from the contact area 10 towards the substrates and the gas outlet.
An embodiment relates to a system wherein the primary gas inlet is comprised by the circumferential wall and is positioned downstream of the deflector plate with respect to the secondary gas flow and upstream of the substrates with respect to the 15 primary gas flow during use.
An embodiment relates to a system wherein the flow distribution means comprise a channel extending in circumferential direction along the circumferential wall of the first end portion, the secondary gas inlet being in gas communication with the process 20 chamber via the channel, wherein the channel comprises openings directed at the contact area. This embodiment allows the secondary gas to be exhausted directly towards the contact area.
An embodiment relates to a system wherein the sealing means comprise a door. A 25 door is advantageous with respect to the quick opening and closing of the process chamber.
An embodiment relates to a system wherein the process chamber is a quartz or silicon carbide process chamber.
An embodiment relates to a system wherein the secondary gas inlet is configured to introduce a purge gas into the process chamber during use. The purge gas can be used for removing depositions from the interior of process chamber.
30 4
The invention also relates to a method for preventing depositions in an atmospheric diffusion or chemical vapour deposition (CVD) system comprising a horizontal process chamber for treating substrates, having a circumferential wall, a 5 sealable first end portion allowing access to the process chamber, a second end portion, sealing means for sealing the first end portion during use, wherein upon sealing a contact area is present between the first end portion and the sealing means, a primary gas inlet for introducing a primary gas into the process chamber, the primary gas comprising a process gas, a secondary gas inlet for introducing a secondary gas into the 10 process chamber, and a gas outlet allowing gas to exit the process chamber, wherein the first end portion or the sealing means are provided with flow distribution means for distributing the secondary gas from the secondary gas inlet towards the contact area, comprising the steps of: 15 - introducing the primary gas into the process chamber, - introducing the secondary gas into the process chamber, and - adjusting the flow of the secondary gas via the flow distribution means in such a way that the secondary gas is distributed towards the contact area.
20 Another diffusion or chemical vapour deposition system is known from US
6.187.102. This system, however, describes a system with a vertical process chamber. Furthermore, this system is intended for operation under vacuum conditions, whereas the present system is intended for operation at atmospheric pressure.
25 Brief description of the drawings
Objects and advantageous aspects of the invention will be apparent from the detailed description of embodiments of the invention in conjunction with the drawings, in which: 30
Fig. 1 shows a schematic representation in cross-section of a prior art diffusion system;
Fig. la shows a close-up view of the contact area where deposits are formed; 5
Fig. 2 shows a diffusion system according to an embodiment of the invention, wherein the gas outlet is comprised by a pipe;
Fig. 3 shows a diffusion system according to the invention, wherein the gas outlet is comprised by the circumferential wall; 5 Fig. 4 shows a diffusion system according to the invention, wherein the gas outlet is comprised by the second end portion and the gas inlet is comprised by the circumferential wall;
Fig. 5 shows the first end portion of a diffusion system according to the invention, wherein the flow is diverted by a deflector plate or baffle; and 10 Figs. 6a - 6c show the first end portion of a diffusion system according to the invention, wherein the flow distribution means comprise a ring-shaped channel for directing secondary gas flow towards the contact area.
Detailed description of the invention 15
Fig. 1 shows a prior art diffusion system 1 having a circumferential wall 4, a first end portion 5 and a second end portion 6 comprising a horizontal process chamber 2. The process chamber 2 can be made of, for example, quartz or silicon carbide. The diffusion system 1 is shown during use. The system 1 as shown has a tubular shape. 20 The circumferential wall 4 has a cylindrical shape. The second end portion 6 may have the shape of a hemisphere. The system 1 comprises heating elements 7 for heating the process chamber 2. The heating elements 7 are positioned outside the process chamber 2 near the circumferential wall 4. Substrates 3 are positioned in the process chamber 2. The substrates 3 can for example be wafers. The process chamber 2 is hermetically 25 sealed off by sealing means 9 embodied by a door contacting the first end portion 5 in a gastight manner. A contact area 10 is present between the door 9 and the first end portion 5. The hemispherical second end portion 6 comprises a gas inlet 11 for introducing the primary gas into the process chamber 2. The gas outlet 14 is comprised by a pipe 20 projecting into the process chamber 2.
During use, a primary gas 12 comprising the process gas is introduced into the process chamber 2 via the primary gas inlet 11. The primary gas 12 is transported towards the gas outlet 14 due to a pressure difference generated between the gas outlet 30 6 14 and the primary gas inlet 11. When the primary gas 12 reaches the substrates 3 the desired reaction between the process gas and the substrates 3 takes place. Due to the fact that the process gas 12 is capable of reaching the vicinity of the contact area 10 and stagnation in gas flow occurs there, unwanted deposits 8 may form near the contact 5 area 10.
Fig. la shows a close-up view of the contact area 10 showing the formation of unwanted deposits 8.
10 Fig. 2 shows a diffusion system 1 according to an embodiment of the invention.
Flow distribution means 15 are provided near the first end portion 5 for distributing the secondary gas 16 from the secondary gas inlet 13 towards the contact area 10. Alternatively, the door 9 can be provided with flow distribution means 15. The flow distribution means 15 are embodied by a deflector plate 17 positioned at a distance 15 from the secondary gas inlet 13 for deflecting the secondary gas 16 flow along the inner surface 18 of the sealing means 9 towards the contact area 10 during use. The distance is chosen such that the secondary gas flow 16 on the one hand is not muffled, but on the other hand does not become too diffuse. Advantageously, a distance of 1-25 mm can be chosen, preferably 1.5 mm. The secondary gas 16 flow can be balanced with the 20 primary gas 12 flow when different processes that require different total gas flows are used in the invention. The gas flow 16 should maintain enough momentum for counteracting and locally diluting the primary gas flow 12, i.e. for preventing it from reaching the contact area 10 and creating a deposit on the surface of the contact area 10. Thus, the primary gas flow 12 is essentially inhibited from reaching the contact area 10 25 by the secondary gas flow 16 thus preventing the formation of deposits near the contact area 10. Preferably, a gap exists between the circumference of the deflector plate 17 and the circumferential wall 4, i.e. a gap exists along the whole circumference of the deflector plate 17. Again, the gap width should be chosen such that enough momentum is maintained by the secondary gas flow 16 near the contact area 10 for counteracting 30 the primary gas flow 10. Instead of a deflector 17 having a plate-like shape other shapes can also be thought of as long as the deflector 17 forces the secondary flow 16 towards the contact area 10. Also, an additional ring can be positioned on the door inner surface 18, to decrease the distance between the gas inlet 13 and the deflector 7 plate 17. This can be done by grinding or cutting the door 9, such that a siphon-like construction is obtained.
The pipe 20 projects through the hemispherical end portion 6, such that the gas 5 outlet 14 is essentially positioned between the deflector plate 17 and the substrates 3, more specifically such that the gas outlet 14 is positioned downstream of the deflector plate 17 with respect to the secondary gas flow 16 and downstream of the substrates 3 with respect to the primary gas 12 flow during use.
10 Fig. 3 shows a diffusion system 1 according to the invention, wherein the gas outlet 14 is comprised by the circumferential wall 4. The gas outlet 14 comprises a through-hole in the wall 4. In essence, the lay-out and operation of the system is similar to that of fig. 2.
15 Fig. 4 shows a diffusion system 1 according to the invention, wherein the gas outlet 14 is comprised by the second end portion 6 and the gas inlet 11 is comprised by the circumferential wall 4. Now, the primary gas flow 12 is basically reversed with respect to the flow shown in fig. 3, due to the fact that the primary gas inlet 11 and the gas outlet 14 have basically been exchanged. The primary gas inlet 11 is essentially a 20 through-hole in the wall 4. The primary gas flow 12 and the secondary gas flow 16 are now mixed together and both flow past the substrates 3 towards the gas outlet 14. The secondary gas inlet 13 for introducing the secondary gas 16 comprising a purge gas to the process chamber 2 is comprised by the door 9. The purge gas 16 flows from the secondary gas inlet 13 to the gas outlet 14.
25
Fig. 5 shows the first end portion 5 of a diffusion system 1 according to the invention, wherein the flow is diverted by a deflector plate 17 or baffle 19. The baffle 19 can be conveniently attached to the door 9 and easily removed when maintenance and/or cleaning is required.
Fig. 6a shows the first end portion 5 of a diffusion system 1 according to the invention, wherein the flow distribution means 15 comprise a ring-shaped channel 21 with openings 22 directed at the contact area 10. The channel 21 runs in circumferential 30 8 direction along the circumferential wall 4. The secondary gas inlet 13 discharges in the channel 21. The secondary gas is exhausted via openings 22 in the channel 21 towards the contact area 10. The ring 21 can also comprise a collar or flange, welded onto the process chamber 2, the collar or flange having a fully open side for directing secondary 5 gas flow 16 towards the contact area 10, instead of separate openings 22. Such further embodiments of the ring 21 are shown in figures 6b and 6c.
9
Reference numerals 1. Diffusion or chemical vapour deposition (CVD) system 2. Process chamber 5 3. Substrates 4. Circumferential wall 5. First end portion 6. Second end portion 7. Heating element 10 8. Deposit 9. Door 10. Contact area 11. Primary gas inlet 12. Process gas 15 13. Secondary gas inlet 14. Gas outlet 15. Flow distribution means 16. Purge gas 17. Deflector plate 20 18. Door inner surface 19. Baffle 20. Pipe 21. Channel 22. Openings (directed at contact area) 25

Claims (14)

1. Atmosferisch diffusie- of CVD (chemische-dampafzettings) systeem (1) omvattende: 5 een horizontale proceskamer (2) voor het behandelen van substraten (3) met een omtrekswand (4), een afsluitbaar eerste eindgedeelte (5) dat toegang tot de proceskamer (2) toestaat, en een tweede eindgedeelte (6), afsluitmiddelen (9) voor het tijdens gebruik afsluiten van het eerste 10 eindgedeelte (5), waarbij tijdens het afsluiten een contactgebied (10) aanwezig is tussen het eerste eindgedeelte (5) en de afsluitmiddelen (9), een eerste gasinlaat (11) voor het toevoeren van een eerste gas (12) aan de proceskamer (2), waarbij het eerste gas (12) een procesgas omvat, 15. een tweede gasinlaat (13) voor het toevoeren van een tweede gas (16) aan de proceskamer (2), en - een gasuitlaat (14) die toestaat dat gas de proceskamer (2) verlaat, met het kenmerk dat 20 het eerste eindgedeelte (5) of de afsluitmiddelen (9) zijn voorzien van stromingsdistributiemiddelen (15) voor het distribueren van het tweede gas (16) vanaf de tweede gasinlaat (13) naar het contactgebied (10).An atmospheric diffusion or CVD (chemical vapor deposition) system (1) comprising: a horizontal process chamber (2) for treating substrates (3) with a peripheral wall (4), a lockable first end portion (5) that accesses the process chamber (2), and a second end part (6), closing means (9) for closing the first end part (5) during use, wherein during closing a contact area (10) is present between the first end part (5) ) and the closing means (9), a first gas inlet (11) for supplying a first gas (12) to the process chamber (2), the first gas (12) comprising a process gas, 15. a second gas inlet (13) for supplying a second gas (16) to the process chamber (2), and - a gas outlet (14) that allows gas to leave the process chamber (2), characterized in that the first end portion (5) or the closing means ( 9) are provided with flow distribution means (15) for distributing the tw The gas (16) from the second gas inlet (13) to the contact area (10). 2. Systeem (1) volgens conclusie 1, waarbij de tweede gasinlaat (13) is omvat door de afsluitmiddelen (9) en de stromingsdistributiemiddelen (15) een afbuigplaat (17) omvatten die op afstand van de tweede gasinlaat (13) is geplaatst voor het afbuigen, tijdens gebruik, van de tweede gasstroom (16) langs het binnenoppervlak (18) van de afsluitmiddelen (9) naar het contactgebied (10)A system (1) according to claim 1, wherein the second gas inlet (13) is comprised by the closing means (9) and the flow distribution means (15) comprise a deflector plate (17) which is spaced from the second gas inlet (13) deflecting, during use, the second gas stream (16) along the inner surface (18) of the closing means (9) to the contact area (10) 3. Systeem (1) volgens conclusie 2, waarbij de afbuigplaat (17) is omvat door een schot (19). 30The system (1) of claim 2, wherein the deflection plate (17) is comprised of a baffle (19). 30 4. Systeem (1) volgens een van de conclusies 2 of 3, waarbij de afbuigplaat (17) is bevestigd aan de afsluitmiddelen (9).System (1) according to one of claims 2 or 3, wherein the deflection plate (17) is attached to the closing means (9). 5. Systeem (1) volgens een van de voorgaande conclusies, waarbij de eerste 5 gasinlaat (11) is omvat door het tweede eindgedeelte (6).5. System (1) according to one of the preceding claims, wherein the first gas inlet (11) is enclosed by the second end portion (6). 6. Systeem (1) volgens een van de voorgaande conclusies, waarbij de gasuitlaat (14) is omvat door de omtrekswand (4) en, met betrekking tot de tweede gasstroom (16), tijdens gebruik stroomafwaarts van de afbuigplaat (17) is geplaatst en 10 stroomafwaarts van de substraten (3) met betrekking tot de eerste gasstroom (12).System (1) according to one of the preceding claims, wherein the gas outlet (14) is enclosed by the circumferential wall (4) and, with respect to the second gas flow (16), is placed downstream of the deflection plate (17) during use and downstream of the substrates (3) with respect to the first gas stream (12). 7. Systeem (1) volgens een van de conclusies 1-5, waarbij de gasuitlaat (14) omvat is door een pijp (20) die in de proceskamer (2) uitsteekt door het tweede eindgedeelte (6) heen zodanig dat, tijdens gebruik, de gasuitlaat (14) stroomafwaarts van de 15 afbuigplaat (17) is geplaatst, met betrekking tot de tweede gasstroom (16), en stroomafwaarts van de substraten (3) met betrekking tot de eerste gasstroom (12).The system (1) according to any of claims 1-5, wherein the gas outlet (14) is comprised by a pipe (20) protruding through the second end portion (6) in the process chamber (2) such that, during use the gas outlet (14) is disposed downstream of the deflection plate (17) with respect to the second gas stream (16), and downstream of the substrates (3) with respect to the first gas stream (12). 8. Systeem (1) volgens een van de conclusies 1-3, waarbij de gasuitlaat (14) is omvat door het tweede eindgedeelte (6). 20The system (1) according to any of claims 1-3, wherein the gas outlet (14) is comprised by the second end portion (6). 20 9. Systeem (1) volgens conclusie 8, waarbij de eerste gasinlaat (11) is omvat door de omtrekswand (4) en, tijdens gebruik, stroomafwaarts van de afbuigplaat (17) is geplaatst, met betrekking tot de tweede gasstroom (16), en stroomopwaarts van de substraten (3) met betrekking tot de eerste gasstroom (12). 25The system (1) according to claim 8, wherein the first gas inlet (11) is enclosed by the peripheral wall (4) and, during use, is placed downstream of the deflection plate (17) with respect to the second gas stream (16), and upstream of the substrates (3) with respect to the first gas stream (12). 25 10. Systeem (1) volgens conclusie 1, waarbij de stromingsdistributiemiddelen (15) een kanaal (21) omvatten dat zich in omtreksrichting langs de omtrekswand (4) van het eerste eindgedeelte (5) uitstrekt, waarbij de tweede gasinlaat (13) in gasverbinding staat met de proceskamer (2) via het kanaal (21), waarbij het kanaal (21) openingen (22) 30 omvat die op het contactgebied (10) zijn gericht.The system (1) of claim 1, wherein the flow distribution means (15) comprises a channel (21) extending circumferentially along the circumferential wall (4) of the first end portion (5), the second gas inlet (13) being in gas communication stands with the process chamber (2) via the channel (21), the channel (21) including openings (22) 30 directed to the contact area (10). 11. Systeem (1) volgens een van de voorgaande conclusies, waarbij de afsluitmiddelen (9) een deur (9) omvatten.System (1) according to one of the preceding claims, wherein the closing means (9) comprise a door (9). 12. Systeem (1) volgens een van de voorgaande conclusies, waarbij de proceskamer (2) een kwarts of siliciumcarbide omvattende proceskamer (2) is.The system (1) according to any of the preceding claims, wherein the process chamber (2) is a process chamber (2) comprising quartz or silicon carbide. 13. Systeem (1) volgens een van de voorgaande conclusies, waarbij de tweede 5 gasinlaat (13) geconfigureerd is om tijdens gebruik een spoel- of schoonmaakgas aan de proceskamer (2) toe te voeren.13. System (1) according to any of the preceding claims, wherein the second gas inlet (13) is configured to supply a flushing or cleaning gas to the process chamber (2) during use. 14. Werkwijze voor het voorkomen van afzettingen in een atmosferisch diffusie- of chemische-dampafzettingssysteem (CVD) (1) omvattende een horizontale proceskamer 10 (2) voor het behandelen van substraten (3) met een omtrekswand (4), een afsluitbaar eerste eindgedeelte (5) dat toegang tot de proceskamer (2) toestaat, een tweede eindgedeelte (6), afsluitmiddelen (9) voor het afsluiten, tijdens gebruik, van het eerste eindgedeelte (5), waarbij bij het afsluiten een contactgebied (10) aanwezig is tussen het eerste eindgedeelte (5) en de afsluitmiddelen (9), een eerste gasinlaat (11) voor het 15 toevoeren van een eerste gas (12) aan de proceskamer (2), waarbij het eerste gas (12) een procesgas omvat, een tweede gasinlaat (13) voor het toevoeren van een tweede gas (16) aan de proceskamer (2), waarbij het eerste eindgedeelte (5) of de afsluitmiddelen (9) zijn voorzien van stromingsdistributiemiddelen (15) voor het distribueren van het tweede gas (16) vanaf de tweede gasinlaat (13) naar het contactgebied (10, omvattende 20 de stappen van: het toevoeren van het eerste gas (12) aan de proceskamer (2), het toevoeren van het tweede procesgas (16) aan de proceskamer (2), en het op zodanige wijze aanpassen van de stroming van het tweede gas (16) 25 via de stromingsdistributiemiddelen (15) dat het tweede gas (16) gedistribueerd wordt naar het contactgebied (10).A method for preventing deposits in an atmospheric diffusion or chemical vapor deposition system (CVD) (1) comprising a horizontal process chamber 10 (2) for treating substrates (3) with a peripheral wall (4), a closable first end portion (5) allowing access to the process chamber (2), a second end part (6), closing means (9) for closing, during use, the first end part (5), a contact area (10) being present at the closing between the first end portion (5) and the closing means (9), a first gas inlet (11) for supplying a first gas (12) to the process chamber (2), the first gas (12) comprising a process gas, a second gas inlet (13) for supplying a second gas (16) to the process chamber (2), the first end portion (5) or the closing means (9) being provided with flow distribution means (15) for distributing the second gas ( 16) from the second gas inlet (13) to the contact area (10, comprising the steps of: supplying the first gas (12) to the process chamber (2), supplying the second process gas (16) to the process chamber (2), and adjusting the flow of the second gas (16) via the flow distribution means (15) that the second gas (16) is distributed to the contact area (10).
NL2008909A 2012-05-31 2012-05-31 Diffusion or chemical vapour deposition (cvd) system. NL2008909C2 (en)

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NL2008909 2012-05-31
NL2008909A NL2008909C2 (en) 2012-05-31 2012-05-31 Diffusion or chemical vapour deposition (cvd) system.

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Citations (2)

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DE2220807A1 (en) * 1971-04-30 1972-11-16 Texas Instruments Inc Semi-conductor substrates - coated with polycrystalline silicon and silicon dioxide by silane pyrolysis
US20060150904A1 (en) * 2003-02-21 2006-07-13 Takashi Ozaki Substrate-processing apparatus and method of producing a semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2220807A1 (en) * 1971-04-30 1972-11-16 Texas Instruments Inc Semi-conductor substrates - coated with polycrystalline silicon and silicon dioxide by silane pyrolysis
US20060150904A1 (en) * 2003-02-21 2006-07-13 Takashi Ozaki Substrate-processing apparatus and method of producing a semiconductor device

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