JP2020176851A5 - - Google Patents

Download PDF

Info

Publication number
JP2020176851A5
JP2020176851A5 JP2019077467A JP2019077467A JP2020176851A5 JP 2020176851 A5 JP2020176851 A5 JP 2020176851A5 JP 2019077467 A JP2019077467 A JP 2019077467A JP 2019077467 A JP2019077467 A JP 2019077467A JP 2020176851 A5 JP2020176851 A5 JP 2020176851A5
Authority
JP
Japan
Prior art keywords
terminal
semiconductor element
semiconductor
electrically connected
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2019077467A
Other languages
English (en)
Japanese (ja)
Other versions
JP2020176851A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2019077467A priority Critical patent/JP2020176851A/ja
Priority claimed from JP2019077467A external-priority patent/JP2020176851A/ja
Publication of JP2020176851A publication Critical patent/JP2020176851A/ja
Publication of JP2020176851A5 publication Critical patent/JP2020176851A5/ja
Pending legal-status Critical Current

Links

JP2019077467A 2019-04-16 2019-04-16 半導体試験装置および半導体素子の試験方法。 Pending JP2020176851A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2019077467A JP2020176851A (ja) 2019-04-16 2019-04-16 半導体試験装置および半導体素子の試験方法。

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019077467A JP2020176851A (ja) 2019-04-16 2019-04-16 半導体試験装置および半導体素子の試験方法。

Publications (2)

Publication Number Publication Date
JP2020176851A JP2020176851A (ja) 2020-10-29
JP2020176851A5 true JP2020176851A5 (enrdf_load_stackoverflow) 2021-12-09

Family

ID=72936151

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2019077467A Pending JP2020176851A (ja) 2019-04-16 2019-04-16 半導体試験装置および半導体素子の試験方法。

Country Status (1)

Country Link
JP (1) JP2020176851A (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7343180B2 (ja) * 2019-08-07 2023-09-12 株式会社クオルテック 電気素子試験装置
CN111025117A (zh) * 2019-12-27 2020-04-17 电子科技大学 一种igbt集电极和发射极间电压不停机测量系统及方法
KR102813894B1 (ko) * 2024-12-11 2025-05-29 한국전자기술연구원 추가 전원 없이 구동되는 특고압 직류배전용 전력반도체의 노화 진단을 위한 온 상태 전압 계측 회로
CN119846421A (zh) * 2025-03-20 2025-04-18 杭州高坤电子科技有限公司 一种碳化硅器件测试方法、系统及存储介质

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5575022U (enrdf_load_stackoverflow) * 1978-11-15 1980-05-23
JP2940227B2 (ja) * 1991-06-26 1999-08-25 富士電機株式会社 半導体素子の温度トリップ特性測定方法および装置
JPH07212207A (ja) * 1994-01-24 1995-08-11 Fuji Electric Co Ltd 方形波定電流発生回路
JPH10143294A (ja) * 1996-11-08 1998-05-29 Olympus Optical Co Ltd パワーダウン回路
JP4545603B2 (ja) * 2005-01-28 2010-09-15 三菱電機株式会社 電力用半導体装置
JP5010842B2 (ja) * 2006-03-22 2012-08-29 東京エレクトロン株式会社 試験対象物の保護回路、試験対象物の保護方法、試験装置、及び試験方法
JP5829986B2 (ja) * 2012-07-18 2015-12-09 エスペック株式会社 パワーサイクル試験装置
JP2014070895A (ja) * 2012-09-27 2014-04-21 Denso Corp 半導体装置の検査方法および検査装置
JP5891184B2 (ja) * 2013-01-17 2016-03-22 エスペック株式会社 パワーサイクル試験装置
CN107991597A (zh) * 2017-12-28 2018-05-04 江苏中科君芯科技有限公司 一种igbt可靠性测试的控制方法、装置及系统
CN108919085B (zh) * 2018-10-17 2024-05-31 北京交通大学 Igbt老化测试电路及方法

Similar Documents

Publication Publication Date Title
JP2020176851A5 (enrdf_load_stackoverflow)
CN111337808B (zh) 功率半导体器件导通压降的在线测量电路及系统
CN105811765B (zh) 一种用于在线测量功率晶体管导通压降的电压钳位电路
CN101210950B (zh) 电子元件耐压测试设备
JP7388052B2 (ja) パワー半導体用試験装置およびパワー半導体試験方法
TW200706892A (en) Testing circuits, wafer, measurement apparatus, device fabricating method and display apparatus
JP2012147655A5 (enrdf_load_stackoverflow)
JP2010528288A5 (enrdf_load_stackoverflow)
US20140327466A1 (en) Over voltage protection testing apparatus
CN202548256U (zh) 短路测试装置
US20130229200A1 (en) Testing apparatus for performing an avalanche test and method thereof
JP2020173197A5 (enrdf_load_stackoverflow)
CN109752637B (zh) 用于检测多芯片并联瞬态电流不均匀度的方法及装置
US10317456B2 (en) Spike safe floating current and voltage source
CN106468756B (zh) 二极管反向恢复时间的测试系统
JP6790974B2 (ja) 半導体素子の検査装置
Su et al. A novel electrical evaluation approach for inhomogeneous current distribution in parallel-connected IGBT modules
JP2014107872A5 (enrdf_load_stackoverflow)
JP6312180B2 (ja) 小さい電流を検出するための方法及び装置、ならびに回路遮断器
JP2016118399A (ja) 試験装置
KR101588963B1 (ko) 수명 시험 장치
JP6977486B2 (ja) 半導体装置の試験装置
Wuest et al. Integrated condition monitoring by measuring the delay of gate turn-off
JP2007013119A5 (enrdf_load_stackoverflow)
CN204314429U (zh) 一种igbt保护功能检测电路