JP2020162069A - Crystal wafer - Google Patents

Abstract

To provide a crystal wafer that can suppress occurrence of a break mark on a package side.SOLUTION: In a crystal wafer 1, a package 120 of a crystal oscillator 100 is connected to a support portion 2 provided on a first side 120a side of a package 120 in a plan view via first and second connecting portions 4 and 5. The package 120 is formed into a substantially rectangular shape in a plan view, and a second side 120c of the package 120 is provided so as to face the adjacent package 120 with a first gap 7a in between, and an edge 7c on the first connecting portion 4 side of the first gap 7a is provided on an extension line of the first side 120a of the package 120, and a third side 120d of the package 120 is provided so as to face the adjacent package 120 with a second gap 7b in between. An edge 7d on the second connecting portion 5 side of the second gap 7b is provided on the extension line of the first side 120a of the package 120.SELECTED DRAWING: Figure 2

Description

The present invention relates to a quartz wafer.

In recent years, the operating frequencies of various electronic devices have been increased and the packages have been made smaller (particularly lower in height). Along with such high frequency and miniaturization of packages, crystal vibration devices (for example, crystal oscillators and crystal oscillators) are also required to cope with high frequency and miniaturization of packages.

In this type of crystal vibrating device, the housing is composed of a substantially rectangular parallelepiped package. The package is composed of a first sealing member and a second sealing member made of quartz, and a crystal diaphragm made of quartz and having excitation electrodes formed on both main surfaces. The first sealing member and the second sealing member are laminated and joined via a crystal diaphragm, and the excitation electrodes of the crystal diaphragm arranged inside the package (internal space) are hermetically sealed (for example). , Patent Document 1). Hereinafter, the laminated form of such a crystal vibration device is referred to as a sandwich structure.

By the way, in this type of crystal vibration device, a wafer in which a plurality of packages are assembled is produced in the manufacturing process, and the wafer is cut into individual packages by dicing or the like. Further, conventionally, it is known that each crystal vibrating piece is cut off from a wafer in which a plurality of crystal vibrating pieces are assembled to be individualized (see, for example, Patent Document 2).

Japanese Unexamined Patent Publication No. 2010-252051 JP-A-2008-092505

However, when each package is cut off from a wafer in which a plurality of packages of the crystal vibration device as described above are assembled and separated into individual pieces, breakage marks (uncut parts) such as cracks and chipping are generated on the package side. There is concern about doing so.

The present invention has been made in consideration of the above-mentioned circumstances, and an object of the present invention is to provide a crystal wafer capable of suppressing the occurrence of break marks on the package side.

The present invention constitutes means for solving the above-mentioned problems as follows. That is, in the present invention, at least one package of the crystal vibrating device that airtightly seals the crystal vibrating piece is connected to the support portion provided on the first side side of the package in a plan view via the connecting portion. In the crystal wafer, the connecting portion includes first and second connecting portions provided at predetermined intervals in a direction along the first side of the package, and the package has a substantially rectangular shape in a plan view. The second side and the third side of the package are formed and extend from both ends of the first side in a direction perpendicular to the first side, and the second side is adjacent to each other with a first gap. The third is provided so as to face the frame portion of the package or the crystal wafer, and the end edge of the first gap on the first connecting portion side is provided on an extension line of the first side of the package. The sides are provided so as to face the adjacent packages or the frame portion of the crystal wafer with the second gap separated, and the edge of the second gap on the second connecting portion side is the first side of the package. It is characterized in that it is provided on an extension line of.

Here, the package has a structure in which a crystal vibrating plate constituting the crystal vibrating piece and a first sealing member and a second sealing member covering the crystal vibrating piece from above and below are laminated. The crystal wafer has a configuration in which a wafer for a first sealing member, a wafer for a crystal vibrating plate, and a wafer for a second sealing member are laminated, and the first connecting portion is the first. The first connecting portion for the first sealing member formed on the wafer for the sealing member, the first connecting portion for the crystal vibrating plate formed on the wafer for the crystal vibrating plate, and the wafer for the second sealing member. The formed first connecting portion for the second sealing member is laminated, and the second connecting portion is for the first sealing member formed on the wafer for the first sealing member. The second connecting portion, the second connecting portion for the crystal vibrating plate formed on the wafer for the crystal vibrating plate, and the second connecting portion for the second sealing member formed on the wafer for the second sealing member , It may have a laminated structure.

According to the above configuration, each package can be easily separated from a crystal wafer in which a plurality of crystal oscillator packages are assembled by folding, and the occurrence of unfolded residue on the package side can be suppressed. Can be done. Specifically, the stress generated when each package is broken is on the side closer to the inner edge of the first and second connecting portions (the center position of the first side of the first and second connecting portions). It becomes easy to concentrate on the connection portion between the edge) and the first side of the package, and the crystal wafer is liable to break from the connection portion as a starting point. According to the above configuration, the edge of the first gap on the side of the first connecting portion and the edge of the second gap on the side of the second connecting portion are provided on the extension line of the first side of the package. At the time of breaking, the breakage generated from the connection portion can be advanced along the first side of the package so as to be substantially straight and not meandering, and the package can be easily separated from the crystal wafer. As a result, it is possible to suppress the occurrence of break marks such as cracks and chipping on the package side, and it is possible to suppress the occurrence of poor appearance of the package.

In the above configuration, it is preferable that the first and second connecting portions are provided on one long side of the package. Further, the first and second connecting portions are provided on the supporting portion side, and a groove portion is provided at the end portion of the first and second connecting portions on the first side side of the package. It is preferable that it is formed along the first side of.

According to the above configuration, the groove can reduce the force required to break the package and reduce the damage applied to the package at the time of breaking. At this time, by providing the first and second connecting portions on the support portion side instead of the package side, the package is less likely to be affected by breakage, and the outer edge of the package can be formed substantially linearly. Further, the traveling direction of the fracture can be controlled by the groove formed along the first side of the package, and the fracture generated from the connection portion can be reliably propagated along the first side of the package. it can. Further, since the first and second connecting portions are provided on one long side of the package, each of the first and second connecting portions is provided as compared with the case where the first and second connecting portions are provided on the short side side of the package. The width (width in the direction in which the first and second connecting portions are lined up) can be increased, and the connecting force of the first and second connecting portions (the width required to connect the package to the supporting portion before folding) ( Holding power) can be secured.

In the above configuration, the first side of the package is provided perpendicular to the X-axis of the crystal wafer, and the second and third sides of the package are provided parallel to the X-axis of the crystal wafer. It is preferable that it is.

According to the above configuration, by providing the first and second connecting portions on the long side of the package on the + X direction side, when wet etching is performed, the anisotropy of the crystal wafer causes the vibrating portion of the crystal diaphragm to be on the + X direction side. It is possible to suppress the occurrence of defects (chamfering) at the corners of the surface. In this case, since the groove portion is formed perpendicular to the X-axis of the crystal wafer, the shape of the slope of the groove portion can be formed symmetrically on the front and back surfaces of the crystal wafer by wet etching. Further, if the groove portion is formed perpendicular to the X axis of the crystal wafer and the width of the groove portion is adjusted, the etching rate is reduced, so that the etching rate is performed at the same time as the step of forming other gaps (first gap, second gap, etc.). Even if it is processed, it can be designed so that the groove does not penetrate the crystal wafer. As a result, it is possible to prevent the package from being separated from the crystal wafer during the etching process.

According to the present invention, each package can be easily separated from a crystal wafer in which a plurality of crystal oscillator packages are assembled by folding, and the occurrence of break marks on the package side can be suppressed. Can be done.

FIG. 1 is a schematic plan view showing a crystal wafer according to the present embodiment. FIG. 2 is an enlarged view of a part of the crystal wafer of FIG. FIG. 3 is an exploded perspective view showing a first sealing member wafer, a crystal diaphragm wafer, and a second sealing member wafer constituting the crystal wafer of FIG. FIG. 4 is a schematic configuration diagram showing a crystal vibration device individualized from the crystal wafer according to the present embodiment. FIG. 5 is a schematic plan view showing the first sealing member of the crystal unit of FIG. FIG. 6 is a schematic back view showing the first sealing member of the crystal unit of FIG. 4. FIG. 7 is a schematic plan view showing a crystal diaphragm of the crystal oscillator of FIG. FIG. 8 is a schematic back view showing a crystal diaphragm of the crystal oscillator of FIG. FIG. 9 is a schematic plan view showing the second sealing member of the crystal unit of FIG. FIG. 10 is a schematic back view showing the second sealing member of the crystal unit of FIG. 4.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.

In the crystal wafer according to the present embodiment, at least one package of a substantially rectangular parallelepiped crystal vibration device that airtightly seals a crystal vibration piece is connected to a support portion provided on one side of the package in a plan view. It is configured to be connected via. That is, as illustrated in FIG. 1, the crystal wafer 1 has a configuration in which a plurality of packages 120 of crystal vibration devices are assembled. Before explaining the crystal wafer 1, first, a crystal vibration device will be described. Hereinafter, as an example of the crystal vibration device, the crystal oscillator 100 as shown in FIGS. 4 to 10 will be described.

-Crystal oscillator-
As shown in FIG. 4, the crystal oscillator 100 includes a crystal diaphragm (piezoelectric diaphragm) 10, a first sealing member 20, and a second sealing member 30. In the crystal oscillator 100, the crystal diaphragm 10 and the first sealing member 20 are joined, and the crystal diaphragm 10 and the second sealing member 30 are joined to form a package 120 having a substantially rectangular parallelepiped sandwich structure. Is configured. That is, in the crystal oscillator 100, the internal space (cavity) of the package 120 is formed by joining the first sealing member 20 and the second sealing member 30 to both main surfaces of the crystal diaphragm 10. The vibrating portion 11 (see FIGS. 7 and 8) is hermetically sealed in this internal space.

The crystal unit 100 has, for example, a package size of 1.0 × 0.8 mm, and is designed to be downsized and low in height. Further, with the miniaturization, in the package 120, the electrodes are made conductive by using through holes described later without forming castration. Further, the crystal oscillator 100 is electrically connected to an external circuit board (not shown) provided outside via solder.

Next, each member of the crystal diaphragm 10, the first sealing member 20, and the second sealing member 30 in the crystal oscillator 100 will be described with reference to FIGS. 4 to 10. In addition, here, each member which is configured as a single unit which is not joined will be described. FIGS. 5 to 10 merely show one configuration example of each of the crystal diaphragm 10, the first sealing member 20, and the second sealing member 30, and these are not limited to the present invention.

As shown in FIGS. 7 and 8, the crystal diaphragm 10 is a piezoelectric substrate made of quartz, and both main surfaces (first main surface 101 and second main surface 102) are flat smooth surfaces (mirror surface processing). It is formed. In the present embodiment, as the crystal diaphragm 10, an AT-cut quartz plate that performs thickness sliding vibration is used. In the crystal diaphragm 10 shown in FIGS. 7 and 8, both main surfaces 101 and 102 of the crystal diaphragm 10 are formed as XZ'planes. In this XZ'plane, the direction parallel to the lateral direction (short side direction) of the crystal vibrating plate 10 is the X-axis direction, and the direction parallel to the longitudinal direction (long side direction) of the crystal vibrating plate 10 is the Z'axis. It is said to be the direction. The AT cut is 35 ° around the X axis with respect to the Z axis among the three crystal axes of the artificial quartz, the electric axis (X axis), the mechanical axis (Y axis), and the optical axis (Z axis). This is a processing method that cuts out at an angle tilted by 15'. In the AT-cut quartz plate, the X-axis coincides with the crystal axis of the quartz. The Y'axis and Z'axis were tilted approximately 35 ° 15'from the Y and Z axes of the crystal axis of the crystal, respectively (this cutting angle was slightly changed within the range of adjusting the frequency and temperature characteristics of the AT-cut crystal diaphragm. May) coincide with the axis. The Y'axis direction and the Z'axis direction correspond to the cutting direction when cutting out the AT-cut quartz plate.

A pair of excitation electrodes (first excitation electrode 111, second excitation electrode 112) are formed on both main surfaces 101 and 102 of the crystal diaphragm 10. The crystal diaphragm 10 holds the vibrating portion 11 by connecting the vibrating portion 11 formed in a substantially rectangular shape, the outer frame portion 12 surrounding the outer circumference of the vibrating portion 11, and the vibrating portion 11 and the outer frame portion 12. It has a holding portion 13 and a holding portion 13. That is, the crystal diaphragm 10 has a configuration in which the vibrating portion 11, the outer frame portion 12, and the holding portion 13 are integrally provided. The holding portion 13 extends (projects) from only one corner portion of the vibrating portion 11 located in the + X direction and the −Z ′ direction to the outer frame portion 12 in the −Z ′ direction. A cutout portion 10a formed by cutting out the crystal diaphragm 10 is provided between the vibrating portion 11 and the outer frame portion 12. In the present embodiment, the crystal diaphragm 10 is provided with only one holding portion 13 for connecting the vibrating portion 11 and the outer frame portion 12, and the cutout portion 10a surrounds the outer circumference of the vibrating portion 11. It is formed continuously in.

The first excitation electrode 111 is provided on the first main surface 101 side of the vibrating portion 11, and the second excitation electrode 112 is provided on the second main surface 102 side of the vibrating portion 11. Lead-out wirings (first lead-out wiring 113, second lead-out wiring 114) for connecting these excitation electrodes to external electrode terminals are connected to the first excitation electrode 111 and the second excitation electrode 112. The first lead-out wiring 113 is drawn out from the first excitation electrode 111 and is connected to the connection joint pattern 14 formed on the outer frame portion 12 via the holding portion 13. The second lead-out wiring 114 is drawn out from the second excitation electrode 112 and is connected to the connection joint pattern 15 formed on the outer frame portion 12 via the holding portion 13.

On both main surfaces (first main surface 101, second main surface 102) of the crystal diaphragm 10, a vibrating side seal for joining the crystal diaphragm 10 to the first sealing member 20 and the second sealing member 30 is provided. Each stop is provided. The vibration side first bonding pattern 121 is formed as the vibration side sealing portion of the first main surface 101, and the vibration side second bonding pattern 122 is formed as the vibration side sealing portion of the second main surface 102. There is. The vibration-side first joint pattern 121 and the vibration-side second joint pattern 122 are provided on the outer frame portion 12, and are formed in an annular shape in a plan view.

Further, as shown in FIGS. 7 and 8, the crystal diaphragm 10 is formed with five through holes penetrating between the first main surface 101 and the second main surface 102. Specifically, the four first through holes 161 are provided in the regions of the four corners (corners) of the outer frame portion 12, respectively. The second through hole 162 is an outer frame portion 12, and is provided on one side of the vibrating portion 11 in the Z'axis direction (in FIGS. 7 and 8, the −Z'direction side). A connection pattern 123 is formed around the first through hole 161. Further, around the second through hole 162, a connection joint pattern 124 is formed on the first main surface 101 side, and a connection joint pattern 15 is formed on the second main surface 102 side.

In the first through hole 161 and the second through hole 162, through electrodes for conducting the electrodes formed on the first main surface 101 and the second main surface 102 are provided along the inner wall surface of each of the through holes. It is formed. Further, the central portion of each of the first through hole 161 and the second through hole 162 is a hollow through portion penetrating between the first main surface 101 and the second main surface 102.

As shown in FIGS. 5 and 6, the first sealing member 20 is a rectangular parallelepiped substrate formed from one AT-cut quartz plate, and the second main surface 202 (crystal vibration) of the first sealing member 20. The surface to be joined to the plate 10) is formed as a flat smooth surface (mirror surface processing). Although the first sealing member 20 does not have a vibrating portion, the thermal expansion rate of the crystal vibrating plate 10 and the first sealing member 20 can be increased by using the AT-cut crystal plate as in the crystal diaphragm 10. It can be the same, and thermal deformation in the crystal unit 100 can be suppressed. Further, the directions of the X-axis, Y-axis and Z'-axis of the first sealing member 20 are also the same as those of the crystal diaphragm 10.

As shown in FIG. 5, the first main surface 201 (outer main surface not facing the crystal diaphragm 10) of the first sealing member 20 has the first and second metal films 22 and 23 for wiring. , A third metal film 28 for shielding is formed. The first and second metal films 22 and 23 for wiring electrically connect the first and second excitation electrodes 111 and 112 of the crystal diaphragm 10 and the external electrode terminals 32 of the second sealing member 30. It is provided as wiring for. The first and second metal films 22 and 23 are provided at both ends in the Z'axis direction, the first metal film 22 is provided on the + Z'direction side, and the second metal film 23 is −Z ′. It is provided on the directional side. The first and second metal films 22 and 23 are formed so as to extend in the X-axis direction. The first metal film 22 is formed in a substantially rectangular shape, and a protruding portion 22a protruding in the −Z ′ direction is provided on a portion of the first metal film 22 on the + X direction side. The second metal film 23 is formed in a substantially rectangular shape, and a protruding portion 23a protruding in the + Z'direction is provided on the portion of the second metal film 23 on the −X direction side.

The third metal film 28 is provided between the first and second metal films 22 and 23, and is arranged at a predetermined interval from the first and second metal films 22 and 23. The third metal film 28 is provided in almost all areas of the first main surface 201 of the first sealing member 20 in which the first and second metal films 22 and 23 are not formed.

As shown in FIGS. 5 and 6, the first sealing member 20 is formed with six through holes penetrating between the first main surface 201 and the second main surface 202. Specifically, four third through holes 211 are provided in the regions of the four corners (corners) of the first sealing member 20. The fourth and fifth through holes 212 and 213 are provided in the + Z'direction and the −Z'direction in FIGS. 5 and 6, respectively.

In the third through holes 211 and the fourth and fifth through holes 212 and 213, through electrodes for conducting the electrodes formed on the first main surface 201 and the second main surface 202 are provided in each of the through holes. It is formed along the inner wall surface. Further, the central portion of each of the third through hole 211 and the fourth and fifth through holes 212 and 213 is a hollow through portion penetrating between the first main surface 201 and the second main surface 202. Then, two third through holes 211 and 211 (third throughs located at the corners in the + X direction and the + Z'direction of FIGS. 5 and 6) located diagonally to the first main surface 201 of the first sealing member 20. The hole 211 and the through electrodes of the third through hole 211) located at the corners in the −X direction and the −Z ′ direction are electrically connected by the third metal film 28. Further, the through electrodes of the third through hole 211 located at the corners in the −X direction and the + Z ′ direction and the through electrodes of the fourth through hole 212 are electrically connected by the first metal film 22. The through electrodes of the third through hole 211 located at the corners in the + X direction and the −Z'direction and the through electrodes of the fifth through hole 213 are electrically connected by the second metal film 23.

On the second main surface 202 of the first sealing member 20, a sealing-side first joining pattern 24 is formed as a sealing-side first sealing portion for joining to the crystal diaphragm 10. The first bonding pattern 24 on the sealing side is formed in an annular shape in a plan view. Further, on the second main surface 202 of the first sealing member 20, a connection pattern 25 is formed around the third through hole 211, respectively. A connection pattern 261 is formed around the fourth through hole 212, and a connection joint pattern 262 is formed around the fifth through hole 213. Further, a connection joint pattern 263 is formed on the opposite side (−Z ′ direction side) of the first sealing member 20 in the long axis direction with respect to the connection joint pattern 261 to connect with the connection joint pattern 261. It is connected to the joint pattern 263 by a wiring pattern 27.

As shown in FIGS. 9 and 10, the second sealing member 30 is a rectangular parallelepiped substrate formed from one AT-cut quartz plate, and the first main surface 301 (crystal vibration) of the second sealing member 30. The surface to be joined to the plate 10) is formed as a flat smooth surface (mirror surface processing). It is desirable that the second sealing member 30 also uses an AT-cut crystal plate as in the crystal diaphragm 10, and the directions of the X-axis, Y-axis, and Z'axis are the same as those of the crystal diaphragm 10.

On the first main surface 301 of the second sealing member 30, a sealing-side second joining pattern 31 is formed as a sealing-side second sealing portion for joining to the crystal diaphragm 10. The sealing-side second bonding pattern 31 is formed in an annular shape in a plan view.

On the second main surface 302 (outer main surface not facing the crystal diaphragm 10) of the second sealing member 30, there are four externals that are electrically connected to an external circuit board provided outside the crystal oscillator 100. The electrode terminal 32 is provided. The external electrode terminals 32 are located at four corners (corners) of the second main surface 302 of the second sealing member 30.

As shown in FIGS. 9 and 10, the second sealing member 30 is formed with four through holes penetrating between the first main surface 301 and the second main surface 302. Specifically, the four sixth through holes 33 are provided in the regions of the four corners (corners) of the second sealing member 30. In the sixth through hole 33, through electrodes for conducting conduction of the electrodes formed on the first main surface 301 and the second main surface 302 are formed along the inner wall surface of each of the sixth through holes 33. There is. Through the through electrodes formed on the inner wall surface of the sixth through hole 33 in this way, the electrodes formed on the first main surface 301 and the external electrode terminals 32 formed on the second main surface 302 are conducted. .. Further, the central portion of each of the sixth through holes 33 is a hollow through portion that penetrates between the first main surface 301 and the second main surface 302. Further, on the first main surface 301 of the second sealing member 30, a connection pattern 34 is formed around the sixth through hole 33, respectively.

In the crystal oscillator 100 including the crystal diaphragm 10, the first sealing member 20, and the second sealing member 30, the crystal diaphragm 10 and the first sealing member 20 have a vibrating side first bonding pattern 121 and The first bonding pattern 24 on the sealing side is diffusively bonded in a state of being overlapped, and the crystal diaphragm 10 and the second sealing member 30 overlap the second bonding pattern 122 on the vibrating side and the second bonding pattern 31 on the sealing side. The sandwich-structured package 120 shown in FIG. 4 is manufactured by diffusion-bonding in this state. As a result, the internal space of the package 120, that is, the accommodation space of the vibrating portion 11 is hermetically sealed.

At this time, the connection patterns described above are also diffusion-bonded in a superposed state. Then, by joining the connection patterns to each other, the crystal oscillator 100 can obtain electrical conduction between the first excitation electrode 111, the second excitation electrode 112, and the external electrode terminal 32. Specifically, the first excitation electrode 111 includes a first lead wiring 113, a wiring pattern 27, a fourth through hole 212, a first metal film 22, a third through hole 211, a first through hole 161 and a sixth through hole. It is connected to the external electrode terminal 32 via the holes 33 in order. The second excitation electrode 112 includes a second lead wire 114, a second through hole 162, a fifth through hole 213, a second metal film 23, a third through hole 211, a first through hole 161 and a sixth through hole 33. It is connected to the external electrode terminal 32 via the sequence. Further, the third metal film 28 is connected to the ground (ground connection, using a part of the external electrode terminal 32) via the third through hole 211, the first through hole 161 and the sixth through hole 33 in this order. ing.

In the crystal oscillator 100, it is assumed that a plurality of layers are laminated on a quartz plate and a Ti (titanium) layer and an Au (gold) layer are vapor-deposited from the lowest layer side thereof in various bonding patterns. Is preferable. Further, if the other wirings and electrodes formed on the crystal oscillator 100 have the same configuration as the bonding pattern, the bonding patterns, wirings and electrodes can be patterned at the same time, which is preferable.

In the crystal oscillator 100 configured as described above, the sealing portions (seal paths) 115 and 116 that airtightly seal the vibrating portion 11 of the crystal diaphragm 10 are formed in an annular shape in a plan view. The seal path 115 is formed by the diffusion bonding of the vibration side first bonding pattern 121 and the sealing side first bonding pattern 24 described above, and the outer edge shape and the inner edge shape of the seal path 115 are formed in a substantially octagonal shape. Similarly, the seal path 116 is formed by the diffusion bonding of the vibration side second bonding pattern 122 and the sealing side second bonding pattern 31 described above, and the outer edge shape and the inner edge shape of the seal path 116 are formed in a substantially octagonal shape.

In the crystal oscillator 100 in which the seal paths 115 and 116 are formed by diffusion bonding in this way, the first sealing member 20 and the crystal diaphragm 10 have a gap of 1.00 μm or less, and the second sealing member 30 And the crystal diaphragm 10 have a gap of 1.00 μm or less. That is, the thickness of the seal path 115 between the first sealing member 20 and the crystal diaphragm 10 is 1.00 μm or less, and the thickness of the seal path 116 between the second sealing member 30 and the crystal diaphragm 10 is 1.00 μm or less. , 1.00 μm or less (specifically, 0.15 μm to 1.00 μm in the Au-Au junction of the present embodiment). As a comparative example, in the conventional metal paste encapsulant using Sn, the thickness is 5 μm to 20 μm.

-Crystal wafer-
Next, the crystal wafer 1 according to the present embodiment will be described with reference to FIGS. 1 to 3.

As shown in FIG. 1, the crystal wafer 1 has a configuration in which a plurality of packages 120 of the crystal oscillator 100 are assembled. In the example of FIG. 1, in the crystal wafer 1, a plurality of packages 120 formed in a substantially rectangular shape in a plan view are arranged in a matrix, and are arranged in a vertical direction (X-axis direction in FIG. 1) and a horizontal direction (Z in FIG. 1). Eight packages 120 are arranged in each of the'axial directions), and a total of 64 packages 120 are provided. The number of packages 120 is an example, and is not limited to the above number.

The crystal wafer 1 includes a support portion (crosspiece) 2 for supporting a plurality of packages 120. The support portion 2 extends along the Z'axis direction of the crystal wafer 1. Both ends of the support portion 2 are integrally connected to the frame portion (outer frame portion) 3 of the crystal wafer 1. A plurality of support portions 2 (eight in FIG. 1) are provided at predetermined intervals in the X-axis direction of the crystal wafer 1. The frame portion 3 is a substantially rectangular frame with one side open in a plan view, and is formed in a substantially “U” shape. A support portion 2 is provided at a position corresponding to one open side of the frame portion 3, and the annular frame body is integrally formed by the support portion 2 and the frame portion 3.

A plurality of packages 120 (eight in FIG. 1) are supported on the support portion 2. The packages 120 are arranged at predetermined intervals in the Z'axis direction of the crystal wafer 1. The support portion 2 is provided on the first side 120a side of the package 120 in a plan view. In the present embodiment, the support portion 2 is provided on the first side 120a side (+ X direction side in FIG. 1), which is one long side of the package 120, and is provided on the other long side 120b side of the package 120 (FIG. 1). It is not provided on the −X direction side of 1. The first side 120a of the package 120 extends along the Z'axis direction. From both ends of the first side 120a of the package 120, the second side 120c and the third side 120d of the package 120 extend in the direction perpendicular to the first side 120a (X-axis direction in FIG. 1), respectively.

The package 120 is connected to the support portion 2 via a connecting portion (folding portion). The connecting portion includes the first and second connecting portions 4 and 5 provided at predetermined intervals (spaces) in the Z'axis direction of the crystal wafer 1. The first and second connecting portions 4 and 5 extend from the first side 120a of the package 120 to the supporting portion 2 in a plan view. That is, one end side (-X direction side in FIG. 1) of the first and second connecting portions 4 and 5 is connected to the first side 120a of the package 120, and the other end side of the first and second connecting portions 4 and 5 is connected. (The + X direction side in FIG. 1) is connected to the support portion 2. The package 120 is supported by the support portion 2 of the crystal wafer 1 only by the first and second connecting portions 4 and 5. That is, in a plan view, the outer peripheral edge of the package 120 faces a space (gap) except for a portion where the first and second connecting portions 4 and 5 are connected.

The first and second connecting portions 4 and 5 have the same configuration, and have a shape that is substantially axisymmetric with respect to the straight line L1 that passes through the center of the package 120 and is perpendicular to the first side 120a of the package 120 in a plan view. It has become. Hereinafter, the first connecting portion 4 will be described as a representative, and the description of the second connecting portion 5 will be omitted.

As shown in FIG. 2, in the first connecting portion 4, the width (width in the Z'axis direction) of the end portion 4a on the support portion 2 side is the width (Z) of the end portion 4b on the first side 120a side of the package 120. It is larger than the width in the axial direction. The inner edge 4c of the first connecting portion 4, that is, the edge on the side closer to the center position 120e of the first side 120a of the package 120 (the + Z'direction side in FIG. 2) has the edge on the support portion 2 side. It protrudes inward (+ Z'direction side in FIG. 2) in a plan view from the edge of the package 120 on the first side 120a side. In other words, the edge on the support portion 2 side is provided at a position closer to the straight line L1 in a plan view than the edge on the first side 120a side of the package 120. The distance between the edge on the support portion 2 side and the straight line L1 is smaller than the distance between the edge on the first side 120a side and the straight line L1. Therefore, a substantially trapezoidal space is formed between the first connecting portion 4 and the second connecting portion 5.

Further, the inner edge 4c of the first connecting portion 4 is formed in a curved shape. Specifically, in the inner edge 4c, the portion between the edge on the support portion 2 side and the edge on the first side 120a side, in other words, the portion other than both ends is not provided with a corner. It has a shape (shape without corners). In this case, the inner edge 4c is a part of an arc having a center on the straight line L1. At the connection portion 120g between the inner edge 4c and the first side 120a of the package 120, the angle formed by the tangent of the inner edge 4c and the first side 120a of the package 120 is preferably less than 90 degrees. The inner edge 4c may be linear, or may have a corrugated shape in which a plurality of arcs are combined.

Further, a groove portion (recess) 6 is formed at the end portion 4b of the first connecting portion 4 on the package 120 side. The groove portion 6 is provided along the first side 120a of the package 120. That is, the groove portion 6 extends along the Z'axis direction of the crystal wafer 1. The groove portion 6 extends from the connecting portion 120g between the inner edge 4c and the first side 120a of the package 120 toward the corner portion 120h of the package 120 (toward the −Z'direction side in FIG. 2). The groove portion 6 does not reach the corner portion 120h of the package 120, and the groove portion 6 is provided at a distance from the corner portion 120h of the package 120. That is, the groove portion 6 does not reach the corner portion 120h of the package 120, and the vicinity of the corner portion 120h of the package 120 is a portion where the groove portion is not formed. The groove 6 may reach the corner 120h of the package 120.

As shown in FIG. 2, the second side 120c of the package 120 is provided so as to face the adjacent packages 120'on the −Z'direction side with the first gap 7a separated from each other, and the first connection of the first gap 7a is provided. The edge 7c on the side of the portion 4 is provided on the extension line of the first side 120a of the package 120. Further, although not shown, the third side 120d of the package 120 is provided so as to face the adjacent packages 120 on the + Z'direction side with the second gap 7b separated from each other, and is provided on the second connecting portion 5 side of the second gap 7b. The edge 7d of the package 120 is provided on the extension line of the first side 120a of the package 120. The first gap 7a provided on the −Z ′ direction side of the package 120 and the second gap 7b provided on the + Z ′ direction side of the adjacent packages 120 ′ have the same gap (space).

A substantially rectangular first gap 7a is provided between the second side 120c of the package 120 and the third side 120d of the package 120 ′ adjacent to each other on the −Z ′ direction side. The edge 7c of the first gap 7a on the first connecting portion 4 side is provided parallel to the Z'axis direction (perpendicular to the X axis direction) and is located on an extension line of the first side 120a of the package 120. ing. Similarly, a substantially rectangular second gap 7b in a plan view is provided between the third side 120d of the package 120 and the second side 120c of the package adjacent to each other on the + Z'direction side. The edge 7d of the second gap 7b on the second connecting portion 5 side is provided parallel to the Z'axis direction (perpendicular to the X axis direction) and is located on an extension line of the first side 120a of the package 120. ing.

As described above, the first gap 7a and the second gap 7b are formed only up to the extension line of the first side 120a of the package 120, and have a shape without the recess 8 as shown by the alternate long and short dash line in FIG. It has become. Therefore, the first connecting portion 4 of the package 120 and the second connecting portion 5 of the package 120 ′ adjacent to each other on the −Z ′ direction side are continuously provided with the same width (width in the X-axis direction). Similarly, the second connecting portion 5 of the package 120 and the first connecting portion 4 of the package 120 adjacent to each other on the + Z'direction side are continuously provided with the same width (width in the X-axis direction).

Of the plurality of packages 120 arranged in the horizontal direction (Z'axis direction), in the case of the package 120 located at the end on the −Z'direction side, the second side 120c of the package 120 is separated by the first gap 7a. The edge 7c of the first gap 7a on the first connecting portion 4 side is provided on the extension line of the first side 120a of the package 120 so as to face the frame portion 3 of the crystal wafer 1. Similarly, in the case of the package 120 located at the end on the + Z'direction side among the plurality of packages 120 arranged in the horizontal direction, the third side 120d of the package 120 is separated from the second gap 7b by the crystal wafer 1. The edge 7d on the second connecting portion 5 side of the second gap 7b is provided on the extension line of the first side 120a of the package 120 so as to face the frame portion 3.

In the present embodiment, as shown in FIG. 3, the crystal wafer 1 has a configuration in which a first sealing member wafer 1B, a crystal diaphragm wafer 1A, and a second sealing member wafer 1C are laminated. It has become. The crystal diaphragm wafer 1A, the first sealing member wafer 1B, and the second sealing member wafer 1C have the same shape as the above-mentioned crystal wafer 1 (see FIG. 1) in a plan view.

As shown in FIG. 3, the crystal diaphragm wafer 1A has a configuration in which a plurality of the above-mentioned crystal diaphragms 10 (see FIGS. 7 and 8) are assembled. In the example of FIG. 3, in the crystal diaphragm wafer 1A, a plurality of crystal diaphragms 10 are arranged in a matrix, and the vertical direction (X-axis direction in FIG. 3) and the horizontal direction (Z'axis direction in FIG. 3) are arranged. ) Are arranged with eight crystal diaphragms 10, and a total of 64 crystal diaphragms 10 are provided. Then, in the crystal diaphragm wafer 1A, the crystal diaphragm 10 is supported by the support portions 2A by the first and second connecting portions 4A and 5A, as in the case of the crystal wafer 1 described above. Grooves (slits) 6A and 6A are formed at the ends of the first and second connecting portions 4A and 5A on the crystal diaphragm 10 side. The grooves 6A and 6A are preferably formed on both sides of the quartz diaphragm wafer 1A, but may be formed on at least one side. The quartz diaphragm wafer 1A having the first and second connecting portions 4A and 5A and the groove portions 6A and 6A can be formed by, for example, wet etching. Each crystal diaphragm 10 of the wafer 1A for a crystal diaphragm includes the above-mentioned vibration portion 11, outer frame portion 12, first excitation electrode 111, second excitation electrode 112, vibration side first bonding pattern 121, and vibration. The side second joint pattern 122, the first through hole 161 and the second through hole 162 are formed, but they are not shown in FIG.

As shown in FIG. 3, the first sealing member wafer 1B has a configuration in which a plurality of the above-mentioned first sealing members 20 (see FIGS. 5 and 6) are assembled. In the example of FIG. 3, in the wafer 1B for the first sealing member, a plurality of first sealing members 20 are arranged in a matrix, and the vertical direction (X-axis direction in FIG. 3) and the horizontal direction (FIG. 3). Eight first sealing members 20 are arranged in each direction (in the Z'axis direction), and a total of 64 first sealing members 20 are provided. Then, in the first sealing member wafer 1B, the first sealing member 20 is supported by the support portions 2B by the first and second connecting portions 4B and 5B, as in the case of the crystal wafer 1 described above. There is. Grooves 6B and 6B are formed at the ends of the first and second connecting portions 4B and 5B on the first sealing member 20 side. The grooves 6B and 6B are preferably formed on both sides of the first sealing member wafer 1B, but may be formed on at least one side. The first sealing member wafer 1B having the first and second connecting portions 4B and 5B and the groove portions 6B and 6B can be formed by, for example, wet etching. The first sealing member 20 of the first sealing member wafer 1B has the above-mentioned first metal film 22, second metal film 23, third metal film 28, and first sealing pattern 24 on the sealing side. The wiring pattern 27, the third through hole 211, the fourth through hole 212, the fifth through hole 213, and the like are formed, but they are not shown in FIG.

As shown in FIG. 3, the second sealing member wafer 1C has a configuration in which a plurality of the above-mentioned second sealing members 30 (see FIGS. 9 and 10) are assembled. In the example of FIG. 3, in the wafer 1C for the second sealing member, a plurality of second sealing members 30 are arranged in a matrix, and the vertical direction (X-axis direction in FIG. 3) and the horizontal direction (FIG. 3). Eight second sealing members 30 are arranged in each direction (in the Z'axis direction), and a total of 64 second sealing members 30 are provided. Then, in the second sealing member wafer 1C, the second sealing member 30 is supported by the support portions 2C by the first and second connecting portions 4C and 5C, as in the case of the crystal wafer 1 described above. There is. Grooves 6C and 6C are formed at the ends of the first and second connecting portions 4C and 5C on the second sealing member 30 side. The grooves 6C and 6C are preferably formed on both sides of the second sealing member wafer 1C, but may be formed on at least one side. The second sealing member wafer 1C having the first and second connecting portions 4C and 5C and the groove portions 6C and 6C can be formed by, for example, wet etching. The second sealing member 30 of the wafer 1C for the second sealing member is formed with the above-described second sealing pattern 31, the external electrode terminal 32, the sixth through hole 33, and the like. The illustration is omitted in FIG.

As shown in FIG. 1, a crystal oscillator having a sandwich structure is formed by laminating and joining the first sealing member wafer 1B and the second sealing member wafer 1C via the crystal diaphragm wafer 1A. A crystal wafer 1 in which a plurality of packages 120 of 100 are assembled is configured. In this case, the first and second connecting portions 4 and 5 of the crystal wafer 1 are the first and second connecting portions 4B and 5B of the first sealing member wafer 1B and the first and second connecting portions 4B and 5B of the crystal diaphragm wafer 1A. The second connecting portions 4A and 5A and the first and second connecting portions 4C and 5C of the second sealing member wafer 1C are laminated. The first and second connecting portions 4B and 5B of the first sealing member wafer 1B, the first and second connecting portions 4A and 5A of the quartz diaphragm wafer 1A, and the first of the second sealing member wafer 1C. The second connecting portions 4C and 5C have the same configuration as the first and second connecting portions 4 and 5 of the crystal wafer 1 described above.

Further, the groove portions 6 and 6 of the crystal wafer 1 are groove portions 6B and 6B formed on at least one side of the first sealing member wafer 1B, and groove portions 6A and 6A formed on at least one side of the crystal diaphragm wafer 1A. The structure includes the groove portions 6C and 6C formed on at least one surface of the second sealing member wafer 1C. The groove portions 6B and 6B of the first sealing member wafer 1B, the groove portions 6A and 6A of the quartz diaphragm wafer 1A, and the groove portions 6C and 6C of the second sealing member wafer 1C are the groove portions 6 of the crystal wafer 1 described above. , 6 has the same configuration.

According to the present embodiment, each package 120 can be easily separated from the crystal wafer 1 in which a plurality of packages 120 of the crystal oscillator 100 are assembled by folding, and the packages 120 can be folded on the package 120 side. The remaining occurrence can be suppressed. This point will be described below.

In the crystal wafer 1, the first and second connecting portions 4 and 5 are pressed (pressurized) by a rod-shaped member or the like at the center position 120f (see FIG. 2) of the other long side 120b of the package 120 described above. In, the package 120 is cut off (separated) from the crystal wafer 1 and the package 120 is separated into individual pieces. At this time, the stress due to pressing is most likely to be concentrated on the connecting portion 120g between the inner edge 4c of the first connecting portion 4 (the same applies to the second connecting portion 5) and the first side 120a of the package 120, and the crystal wafer. Breakage is likely to occur in 1 starting from the connection portion 120 g.

Here, when the first gap 7a and the second gap 7b have the recess 8 (see FIG. 2) as described above, when the package 120 is broken off, the starting point is the connecting portion 120 g as shown by the arrow in FIG. The fracture progresses toward the corner 8a of the recess 8. In such a case, there is a concern that tearing marks such as cracks and chipping may occur on the package 120 side, resulting in poor appearance of the package 120.

However, according to the present embodiment, there is no such recess 8, and the edge 7c on the first connecting portion 4 side of the first gap 7a and the edge 7d on the second connecting portion 5 side of the second gap 7b are present. Since it is provided on the extension line of the first side 120a of the package 120, the breakage generated from the connection portion 120g at the time of breaking the package 120 is substantially linear along the first side 120a of the package 120. The package 120 can be easily separated from the crystal wafer 1 so as not to meander. As a result, it is possible to suppress the occurrence of break marks such as cracks and chipping on the package 120 side, and it is possible to suppress the occurrence of poor appearance of the package 120. Moreover, since the width of the support portion 2 (width in the X-axis direction) can be reduced as compared with the case where the recess 8 is provided, more packages 120 can be obtained from the crystal wafer 1 having the same size. .. In other words, the size of the crystal wafer 1 required to obtain the same number of packages 120 can be reduced as compared with the case where the recess 8 is provided.

Further, the groove portion 6 can reduce the pressing force (pressurizing pressure) required for breaking the package 120, and can cause breakage only at a place required for breaking, so that the package 120 can be broken. The damage applied to the package 120 at the time can be reduced. In this case, groove portions 6B are formed on both sides of the first sealing member wafer 1B, groove portions 6A are formed on both sides of the quartz diaphragm wafer 1A, and further, groove portions 6C are formed on both sides of the second sealing member wafer 1C. By forming the package 120, the damage of the package 120 at the time of breaking can be further reduced. Further, the first and second connecting portions 4 and 5 are provided on the support portion 2 side, and a groove portion is provided at the end of each of the first and second connecting portions 4 and 5 on the first side 120a side of the package 120. Since the number 6 is provided, the damage of the package 120 at the time of breaking can be further reduced. At this time, by providing the first and second connecting portions 4 and 5 not on the package 120 side but on the support portion 2 side, the package 120 is less likely to be affected by breakage, and the outer edge of the package 120 is formed substantially linearly. be able to. Further, the traveling direction of the breakage can be controlled by the groove portion 6 formed along the first side 120a of the package 120, and the breakage generated starting from the connection portion 120g is surely along the first side 120a of the package 120. Can be advanced to. Further, since the first and second connecting portions 4 and 5 are provided on one long side side of the package 120, the first and second connecting portions 4 and 5 are provided on the short side side of the package 120 as compared with the case where they are provided on the short side side of the package 120. The width of each of the connecting portions 4 and 5 (the width in the direction in which the first and second connecting portions 4 and 5 are lined up, in this case, the width in the Z'axis direction) can be increased, and the package 120 can be cut off. It is possible to secure the connecting force (holding force) of the first and second connecting portions 4 and 5 necessary for connecting the to the supporting portion 2.

Further, the groove portion 6 is formed along the direction perpendicular to the X-axis direction of the crystal wafer 1 (in this case, the Z'axis direction), and the groove portion 6 is provided at a distance from the corner portion 120h of the package 120. Therefore, when the groove portion 6 is formed by wet etching, it is possible to suppress the defect (chamfering) of the corner portion 120h of the package 120 due to the anisotropy of the crystal wafer 1 which is an AT-cut crystal plate. In this case, since the groove 6 is formed perpendicular to the X-axis direction of the crystal wafer 1, the shape of the slope of the groove 6 can be formed symmetrically on the front and back surfaces of the crystal wafer 1 by wet etching. Further, if the groove portion 6 is formed perpendicularly to the X-axis direction of the crystal wafer 1 and the width of the groove portion 6 is adjusted, the etching rate thereof becomes small, so that other gaps (first gap 7a, second gap 7b, etc.) are formed. Even if the etching process is performed at the same time as the forming step, the groove portion 6 can be designed so as not to penetrate the crystal wafer 1. As a result, it is possible to prevent the package 120 from being separated from the crystal wafer 1 during the etching process.

Further, since the first and second connecting portions 4 and 5 are provided on the first side 120a which is the long side on the + X direction side of the package 120, a crystal wafer which is an AT-cut crystal plate when performing wet etching is performed. Due to the anisotropy of 1, it is possible to suppress the occurrence of defects (chamfering) at the corners on the + X direction side of the vibrating portion 11 (see FIG. 7) of the crystal diaphragm 10. That is, the vibrating portion 11 can be formed into a shape closer to a rectangle as compared with the case where the first and second connecting portions 4 and 5 are provided on the long side 120b on the −X direction side of the package 120.

In the above embodiment, the crystal vibration device is a crystal oscillator, but the present invention can be applied to a crystal vibration device other than the crystal oscillator (for example, a crystal oscillator).

Further, in the above embodiment, the first and second connecting portions 4 and 5 are provided on the first side 120a side which is the long side of the package 120, but the second side 120c side or the second side which is the short side of the package 120. The first and second connecting portions may be provided on the three sides 120d side.

The present invention can be practiced in various other ways without departing from its spirit, gist or main features. Therefore, the above embodiments are merely exemplary in all respects and should not be construed in a limited way. The scope of the present invention is shown by the scope of claims, and is not bound by the text of the specification. Furthermore, all modifications and modifications that fall within the equivalent scope of the claims are within the scope of the present invention.

The present invention can be used for a crystal wafer in which a plurality of packages of a crystal vibration device are assembled.

1 Crystal wafer 2 Support part 4 1st connecting part 5 2nd connecting part 7a 1st gap 7b 2nd gap 10 Crystal diaphragm 11 Vibrating part 20 1st sealing member 30 2nd sealing member 100 Crystal oscillator 120 Package 120a 1st side 120c 2nd side 120d 3rd side

Claims (5)

At least one package of the crystal vibrating device that airtightly seals the crystal vibrating piece is a crystal wafer that is connected to a support portion provided on the first side side of the package in a plan view via a connecting portion.
The connecting portion includes first and second connecting portions provided at predetermined intervals in a direction along the first side of the package.
The package is formed in a substantially rectangular shape in a plan view, and the second side and the third side of the package extend from both ends of the first side in a direction perpendicular to the first side.
The second side is provided so as to face the adjacent package or the frame portion of the crystal wafer with the first gap separated, and the edge of the first gap on the first connecting portion side is the said of the package. It is provided on the extension of the first side and
The third side is provided so as to face the adjacent package or the frame portion of the crystal wafer with the second gap separated, and the edge of the second gap on the second connecting portion side is the said of the package. A crystal wafer characterized in that it is provided on an extension line of the first side. In the crystal wafer according to claim 1,
A crystal wafer characterized in that the first and second connecting portions are provided on one long side side of the package. In the crystal wafer according to claim 1 or 2.
The first and second connecting portions are provided on the support portion side, and the first and second connecting portions are provided.
A quartz wafer characterized in that a groove is formed along the first side of the package at the end of each of the first and second connecting portions on the first side side of the package. In the crystal wafer according to claim 3,
The first side of the package is provided perpendicular to the X-axis of the crystal wafer.
A crystal wafer characterized in that the second side and the third side of the package are provided parallel to the X axis of the crystal wafer. In the crystal wafer according to any one of claims 1 to 4.
The package has a structure in which a crystal diaphragm constituting the crystal vibrating piece and a first sealing member and a second sealing member covering the crystal vibrating piece from above and below are laminated.
The crystal wafer has a structure in which a wafer for a first sealing member, a wafer for a crystal diaphragm, and a wafer for a second sealing member are laminated.
The first connecting portion includes a first connecting portion for the first sealing member formed on the wafer for the first sealing member, and a first connecting portion for the crystal diaphragm formed on the wafer for the crystal diaphragm. , The first connecting portion for the second sealing member formed on the wafer for the second sealing member is laminated.
The second connecting portion includes a second connecting portion for the first sealing member formed on the wafer for the first sealing member, and a second connecting portion for the crystal diaphragm formed on the wafer for the crystal diaphragm. A quartz wafer characterized in that the second connecting portion for the second sealing member formed on the wafer for the second sealing member is laminated.

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