TWI668960B - Piezo vibrating element and system integration package (SIP) module having the same - Google Patents

Abstract

The invention provides a piezoelectric vibration element and a system integration package (SIP) module. A crystal oscillator as a piezoelectric vibration element includes a piezoelectric vibration plate having a first excitation electrode and a second excitation electrode; a first sealing member covering the first excitation electrode of the piezoelectric vibration plate; and a piezoelectric vibration plate A second sealing member covered by the second excitation electrode, the first sealing member is bonded to the piezoelectric vibration plate, and the second sealing member is bonded to the piezoelectric vibration plate to form a piezoelectric vibration that will include the first excitation electrode and the second excitation electrode The vibrating part of the plate is hermetically sealed inside the space. An electrode pattern including a mounting pad for wire bonding is formed on an outer surface of the first sealing member. The piezoelectric vibration element having this structure is suitable for mounting on a SIP module.

Description

Piezo vibrating element and system integration package (SIP) module having the same

The present invention relates to a piezoelectric vibration element such as a crystal oscillator and a SIP module including the same.

In recent years, various electronic devices have been moving toward high-frequency operation and miniaturization (especially low-profile) of packages. Therefore, with the increase in frequency and miniaturization of the package, it is required that piezoelectric vibration elements (for example, crystal resonators, crystal oscillators, etc.) can also cope with the increase in frequency and miniaturization of the package.

The housing of the piezoelectric vibration element is composed of an approximately rectangular parallelepiped-shaped package. The package includes a first sealing member and a second sealing member made of, for example, glass or quartz crystal, and a piezoelectric vibrating piece made of, for example, quartz crystal and having excitation electrodes formed on both main surfaces. The first sealing member and The second sealing members are laminated and bonded by a crystal vibrating piece. In addition, the vibrating portion (excitation electrode) of the piezoelectric vibrating reed disposed inside the package (internal space) is hermetically sealed (for example, Patent Document 1). Hereinafter, the structure of the piezoelectric vibration element using the above-mentioned laminated system is referred to as a sandwich structure.

In addition, Patent Document 2 discloses a surface-mounted piezoelectric vibration element having a mounting terminal for mounting on a circuit board on a rear surface thereof.

Compared with the prior art piezoelectric vibrating element, the piezoelectric vibrating element having a sandwich structure is easy to be reduced in thickness, and even a piezoelectric oscillator such as an IC circuit in which an IC chip is mounted can be sufficiently thinned. It is easy to be built in a package such as a System in a Package (SIP). Here, the prior art The piezoelectric vibration element refers to a structure in which a crystal resonance element is sealed inside a ceramic package housing, that is, a ceramic package element.

Generally, most other components built into SIP are mounted on circuit boards by wire bonding. However, since the surface-mounted piezoelectric vibration element uses a different mounting method from other elements, the mounting process for mounting on a circuit board becomes complicated.

In addition, since the piezoelectric resonator element having a sandwich structure has a thin package, it is easy to cause capacitive coupling with wiring and the like existing in a circuit board (especially when a multilayer circuit board is used). In order to prevent such capacitive coupling, shielding measures need to be taken. However, in the surface-mounted piezoelectric vibration element, since a mounting terminal for mounting on a circuit board is formed on the bottom surface of the element, it is difficult to provide a shield electrode that prevents capacitive coupling.

Patent Document 1 Japanese Patent Application Publication No. 2010-252051

Patent Document 2 Japanese Patent Application Publication No. 2015-165613

In view of the above circumstances, an object of the present invention is to provide a piezoelectric structure with a sandwich structure suitable for mounting on a SIP and a SIP module including the same.

As a technical solution to solve the above technical problems, the present invention provides a piezoelectric vibration element. This piezoelectric vibration element includes a piezoelectric element having a first excitation electrode formed on one main surface of a substrate and a second excitation electrode paired with the first excitation electrode formed on the other main surface of the substrate. A vibration plate; a first sealing member covering the first excitation electrode of the piezoelectric vibration plate; and a second sealing member covering the second excitation electrode of the piezoelectric vibration plate, the first sealing member Sealing member and said piezoelectric vibration The moving plate is joined, and the second sealing member is joined to the piezoelectric vibration plate to form an air-tightly sealed portion of the piezoelectric vibration plate including the first excitation electrode and the second excitation electrode. In the space, the piezoelectric vibration element is characterized in that a mounting pad for wire bonding is formed on an outer surface of the first sealing member.

Based on the above-mentioned structure, a non-surface-mounting type wire bonding mounted piezoelectric vibration element can be realized by providing a mounting pad for wire bonding. By wire bonding, the piezoelectric vibration element can be easily built into the package by SIP mounting.

In addition, the wire bonding mounting surface needs to have a height for pulling wires, and at the same time, the thickness of the IC chip in the IC chip mounting surface increases the height. Therefore, by making the IC chip mounting surface and the wire bonding pad mounting surface the same surface, it is possible to prevent the element height of the piezoelectric vibration element from increasing.

In the above-mentioned piezoelectric vibration element, it is preferable that a shield electrode is formed on an outer surface of the second sealing member.

Based on the above-mentioned structure, when a signal wiring that is opposed to the first excitation electrode and the second excitation electrode exists on the circuit substrate (for example, a multilayer printed circuit board), since the shield electrode is provided on the outer surface of the second sealing member, Capacitive coupling between the excitation electrode and the signal wiring can be prevented. Since the sandwich-type piezoelectric vibration element has a thin structure, capacitive coupling is easily generated between the excitation electrode and other wirings, so such shielding measures are more effective.

In the above-mentioned piezoelectric vibration element, it is preferable that the mounting pad for wire bonding is disposed so as not to overlap the first excitation electrode and the second excitation electrode.

Based on the above structure, it is possible to avoid capacitive coupling between the mounting pad for wire bonding and the excitation electrode, and it is possible to suppress variation in characteristics of the piezoelectric vibration element due to capacitive coupling.

In the above-mentioned piezoelectric vibration element, it is preferable that the mounting pad for wire bonding is disposed so as to face the frame surrounding the internal space.

Based on the above structure, since the mounting pad is disposed so as to face the housing while avoiding the internal space of the piezoelectric vibration element, it is possible to prevent the piezoelectric vibration element from being deformed by the pressing force during the wire bonding in the wire bonding process. The situation happened.

In the above-mentioned piezoelectric vibration element, an IC chip is preferably mounted on an outer surface of the first sealing member.

The wire bonding mounting surface needs to have a height for pulling wires, and at the same time, the thickness of the IC chip in the IC chip mounting surface increases the height. Therefore, by making the IC chip mounting surface and the wire bonding pad mounting surface the same surface, it is possible to suppress an increase in the element height of the piezoelectric vibration element.

In the above-mentioned piezoelectric vibration element, it is preferable that a mounting terminal of the IC chip is formed on an outer surface of the first sealing member, and the mounting terminal of the IC chip is disposed so as not to be connected to the first The excitation electrode and the second excitation electrode overlap.

Based on the above structure, capacitive coupling between the mounting terminal of the IC chip and the excitation electrode can be avoided, and variation in characteristics of the piezoelectric vibration element caused by capacitive coupling can be suppressed.

In the above-mentioned piezoelectric vibration element, it is preferable that a groove is formed around the mounting pad for wire bonding.

With the above configuration, when the sealing resin is molded around the IC wafer, a groove is formed around the mounting pad for wire bonding, so that the sealing resin can be prevented from flowing onto the mounting pad.

In addition, the present invention provides a SIP module including the above-mentioned piezoelectric vibration element.

Since the piezoelectric vibration element of the present invention is provided with a mounting pad for wire bonding, it is possible to realize a non-surface mount type wire bonding mounted piezoelectric vibration element. By wire bonding, the piezoelectric vibration element can be easily built into the package by SIP mounting.

In addition, the wire bonding mounting surface needs to have a height for pulling wires, and at the same time, the thickness of the IC chip in the IC chip mounting surface increases the height. Therefore, by making the IC chip mounting surface and the wire bonding pad mounting surface the same surface, it is possible to suppress an increase in the element height of the piezoelectric vibration element.

101‧‧‧ crystal resonator (piezoelectric vibration element)

102, 103‧‧‧LSI chips

111 ~ 144‧‧‧ Connection bonding pattern

12‧‧‧ Package

13‧‧‧Internal space

15a, 15b, 16a ~ 16i, 17a ~ 17h

151‧‧‧First through hole

151a ~ 156a‧‧‧through electrode

151b ~ 156b‧‧‧through section

152‧‧‧Second through hole

153‧‧‧Third through hole

154‧‧‧Fourth through hole

155‧‧‧Fifth through hole

156‧‧‧Sixth through hole

2‧‧‧ crystal vibrating piece (piezoelectric vibrating plate)

211, 212, 311, 312, 411, 412‧‧‧

22‧‧‧Vibration section

22a‧‧‧Corner

22b‧‧‧Gap

221‧‧‧first excitation electrode

222‧‧‧Second excitation electrode

223‧‧‧first lead electrode

224‧‧‧Second extraction electrode

23‧‧‧Outer frame section

24‧‧‧ Connection Department

251‧‧‧The first bonding pattern on the vibration side

252‧‧‧Second bonding pattern on the vibration side

3‧‧‧first sealing member

321‧‧‧Sealed side first bonding pattern

33‧‧‧Wiring pattern

371, 372‧‧‧ electrode pattern

373, 431‧‧‧Shield electrode

38‧‧‧Metal bump

39‧‧‧Trench

4‧‧‧Second sealing member

421‧‧‧Second bonding pattern on the sealing side

5‧‧‧IC chip

500‧‧‧SIP module

501‧‧‧circuit board

502, 6‧‧‧ sealing resin

FIG. 1 is a schematic configuration diagram showing a schematic configuration of a crystal oscillator according to an embodiment of the present invention.

FIG. 2 is a schematic plan view of a first sealing member of the crystal oscillator.

FIG. 3 is a schematic bottom view of a first sealing member of the crystal oscillator.

4 is a schematic plan view of a crystal resonator element of the crystal oscillator.

Fig. 5 is a schematic bottom view of a crystal resonator element of the crystal oscillator.

6 is a schematic plan view of a second sealing member of the crystal oscillator.

FIG. 7 is a schematic bottom view of a second sealing member of the crystal oscillator.

FIG. 8 is a diagram showing a positional relationship of each bonding member in a crystal oscillator in a plan view.

FIG. 9 is a schematic bottom view showing a modification of the second sealing member of the crystal oscillator.

10 is a schematic cross-sectional view showing the vicinity of an IC chip mounting portion in a crystal oscillator.

11 is a schematic plan view showing a modification of the first sealing member of the crystal oscillator.

FIG. 12 is a schematic plan view showing a modification of the first sealing member of the crystal oscillator.

13 is a schematic plan view showing a modification of the first sealing member of the crystal oscillator.

14 is a cross-sectional view showing a schematic configuration of a SIP module using a crystal oscillator.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

FIG. 1 is a schematic configuration diagram of a crystal oscillator 101 as a piezoelectric vibration element using the present invention. In the following description, as the piezoelectric vibrating element, a crystal oscillator 101 including an IC chip as a constituent element is exemplified, but the present invention is not limited thereto. The piezoelectric vibration element according to the present invention also includes a crystal resonator and the like that do not include an IC chip as a constituent element.

As shown in FIG. 1, a crystal oscillator 101 according to an embodiment of the present invention includes a crystal resonator plate (piezoelectric vibration plate) 2, a first sealing member 3, and a second sealing member 4. In the crystal oscillator 101, the crystal vibrating piece 2 is bonded to the first sealing member 3, and the crystal vibrating piece 2 is bonded to the second sealing member 4, thereby forming a sandwich structured package 12. The first sealing member 3 is bonded to the crystal resonator plate 2 so as to cover the first excitation electrode 221 (refer to FIG. 4) formed on one principal surface 211 of the crystal resonator plate 2. The second sealing member 4 is bonded to the crystal resonator plate 2 so as to cover the second excitation electrode 222 (see FIG. 5) formed on the other main surface 212 of the crystal resonator plate 2.

In the package 12 as a crystal resonator, an IC chip 5 is mounted on one main surface 311 of the first sealing member 3. The IC chip 5 as an electronic component element is a single-chip integrated circuit element that constitutes an oscillation circuit together with a crystal resonator. The crystal oscillator 101 includes a package 12 as a crystal resonator, and an IC chip 5 mounted thereon.

In the crystal oscillator 101, the first sealing member 3 and the second sealing member 4 are respectively bonded to two main surfaces (one main surface 211 and the other main surface 212) of the crystal resonator plate 2 to form an internal space of the package body 12. 13. In the internal space 13, the vibration portion 22 (see FIGS. 4 and 5) including the first excitation electrode 221 and the second excitation electrode 222 is hermetically sealed. The crystal oscillator 101 according to this embodiment employs, for example, a package size of 1.0 × 0.8 mm, thereby achieving miniaturization and downsizing.

Hereinafter, each component of the crystal oscillator 101 will be described with reference to FIGS. 1 to 7. Here, the individual structures of the crystal resonator plate 2, the first sealing member 3, and the second sealing member 4 will be described.

The crystal vibrating piece 2 is a piezoelectric substrate composed of a quartz crystal. As shown in FIGS. 4 and 5, its two main surfaces 211 and 212 are processed (mirror-processed) to be flat and smooth. In this embodiment, as the crystal vibrating piece 2, an AT-cut quartz crystal piece that realizes thickness-shear vibration is used. In the crystal resonator plate 2 shown in Figs. 4 and 5, the two main surfaces 211 and 212 of the crystal resonator plate 2 are on the XZ 'plane. In this XZ 'plane, the short-side direction of the crystal resonator plate 2 is the X-axis direction; the long-side direction of the crystal resonator plate 2 is the Z'-axis direction. In addition, the AT cut refers to the three crystal axes of the artificial quartz crystal, that is, the electrical axis (X axis), the mechanical axis (Y axis), and the optical axis (Z axis), are rotated by 35 degrees about the X axis relative to the Z axis. 15-minute inclination angle for cutting. In the AT-cut quartz crystal plate, the X axis is consistent with the crystal axis of the quartz crystal; The Y 'and Z' axes are the same as the Y and Z axes tilted by 35 degrees and 15 minutes with respect to the crystal axis of the quartz crystal; the Y 'and Z' axes are equivalent to the AT-cut quartz crystal chip Cutting direction.

A pair of excitation electrodes (a first excitation electrode 221 and a second excitation electrode 222) are formed on the two main surfaces 211 and 212 of the crystal vibrating piece 2. The crystal vibrating piece 2 includes a vibrating portion 22 formed into an approximately rectangular shape, an outer frame portion 23 surrounding the outer periphery of the vibrating portion 22, and a connecting portion 24 connecting the vibrating portion 22 and the outer frame portion 23. The vibrating portion 22 and a connection. The part 24 and the outer frame part 23 are integrally formed. In the present embodiment, the connection portion 24 is provided at only one portion between the vibration portion 22 and the outer frame portion 23, and the portion where the connection portion 24 is not provided is a gap 22 b. Although not shown, the vibrating portion 22 and the connecting portion 24 are configured to be thinner than the outer frame portion 23. In this way, since the thickness of the outer frame portion 23 and the connecting portion 24 are different, the natural vibration frequency of the outer frame portion 23 and the piezoelectric vibration frequency of the connecting portion 24 are different. Therefore, the outer frame portion 23 is not easily oscillated with the piezoelectric vibration of the connecting portion 24. Generate resonance.

The connecting portion 24 extends (protrudes) from the one corner portion 22a located in the + X direction and the -Z 'direction of the vibrating portion 22 toward the -Z' direction to the outer frame portion 23. As described above, the outer peripheral end portion of the vibrating portion 22 is provided with the connecting portion 24 at the corner portion 22a where the displacement of the piezoelectric vibration is small, so that the connecting portion 24 is provided at a portion other than the corner portion 22a (the middle portion of the side). Compared with the case, leakage of the piezoelectric vibration to the outer frame portion 23 through the connecting portion 24 can be prevented, and the piezoelectric portion 22 can efficiently perform piezoelectric vibration.

The first excitation electrode 221 is provided on one principal surface side of the vibration portion 22, and the second excitation electrode 222 is provided on the other principal surface side of the vibration portion 22. The first excitation electrode 221, the second excitation electrode 222, and the extraction electrode (the first extraction electrode 223, the second extraction electrode 224) connection. The first lead-out electrode 223 drawn from the first excitation electrode 221 passes through the connection portion 24 and is connected to the connection bonding pattern 116 formed on the outer frame portion 23. The second lead-out electrode 224 led out from the second excitation electrode 222 passes through the connection portion 24 and is connected to the connection bonding pattern 124 formed on the outer frame portion 23. The first excitation electrode 221 and the first lead-out electrode 223 are formed by a base PVD film formed by physical vapor deposition on one main surface 211 and an electrode PVD film formed by lamination by physical vapor deposition on the base PVD film. Make up. The second excitation electrode 222 and the second lead-out electrode 224 are formed by a base PVD film formed by physical vapor deposition on the other main surface 212 and an electrode PVD formed by stacking the base PVD film by physical vapor deposition.膜 结构。 Membrane composition.

The two main surfaces 211 and 212 of the crystal vibrating piece 2 are respectively provided with vibration-side sealing portions for joining the crystal vibrating piece 2 to the first sealing member 3 and the second sealing member 4. The vibration-side sealing portion includes a vibration-side first bonding pattern 251 formed on one principal surface 211 of the crystal resonator plate 2 and a vibration-side second bonding pattern 252 formed on the other principal surface 212 of the crystal resonator plate 2. The vibration-side first bonding pattern 251 and the vibration-side second bonding pattern 252 are provided on the outer frame portion 23 and have a ring shape in plan view. The first excitation electrode 221 and the second excitation electrode 222 are not electrically connected to the vibration-side first bonding pattern 251 and the vibration-side second bonding pattern 252.

The vibration-side first bonding pattern 251 is composed of a base PVD film formed by physical vapor deposition on one main surface 211 and an electrode PVD film formed by lamination by physical vapor deposition on the base PVD film. The vibration-side second bonding pattern 252 is composed of a base PVD film formed by physical vapor deposition on the other main surface 212 and an electrode PVD film formed by lamination and physical vapor deposition on the base PVD film. That is, vibration The first bonding pattern 251 on the side is the same as the second bonding pattern 252 on the vibration side, and is composed of a plurality of layers laminated on the two main surfaces 211 and 212. Titanium (Ti ) Layer and gold (Au) layer. In this way, in the first vibration-side bonding pattern 251 and the second vibration-side bonding pattern 252, the base PVD film is made of a single material (titanium), the electrode PVD film is made of a single material (gold), and the electrode PVD film is thicker than the base PVD film. . In addition, the first excitation electrode 221 formed on one principal surface 211 of the crystal vibrating piece 2 has the same thickness as the first bonding pattern 251 on the vibration side, and the surface of the first excitation electrode 221 and the first bonding pattern 251 on the vibration side are made of the same metal Make up. Similarly, the second excitation electrode 222 formed on the other main surface 212 of the crystal vibrating piece 2 has the same thickness as the second bonding pattern 252 on the vibration side, and the surface of the second excitation electrode 222 and the second bonding pattern 252 on the vibration side have the same thickness. Made of metal. The vibration-side first bonding pattern 251 and the vibration-side second bonding pattern 252 are non-tin (Sn) patterns.

Here, by adopting the same structure for the first excitation electrode 221, the first extraction electrode 223, and the vibration-side first bonding pattern 251, they can be formed together in the same process. Similarly, by adopting the same structure for the second excitation electrode 222, the second extraction electrode 224, and the vibration-side second bonding pattern 252, they can be formed together in the same process. Specifically, the substrate can be formed by a PVD method such as vacuum evaporation or sputtering, ion plating, molecular beam epitaxy (MBE), and laser ablation (for example, a film formation method for patterning in processing such as photolithography). The PVD film or the electrode PVD film is formed together. In this way, manufacturing man-hours can be shortened, which is advantageous for reducing costs.

As shown in FIG. 4, one principal surface 211 of the crystal resonator plate 2 is formed in addition to the first excitation electrode 221, the first extraction electrode 223, and the first bonding pattern 251 on the vibration side. There are nine connection patterns 111 to 119. The connection bonding patterns 111 to 114 are provided in a region of the four corners (corner portions) of the crystal resonator plate 2 in the outer frame portion 23 of the crystal resonator plate 2. The connection bonding patterns 111 to 114 are provided at a predetermined interval from the vibration-side first bonding pattern 251.

The connection bonding patterns 115 and 116 are provided on the outer frame portion 23 of the crystal resonator plate 2 on the -Z 'direction side of the vibrating portion 22 of the crystal resonator plate 2. The connection bonding patterns 115 and 116 are arranged along the X-axis direction, the connection bonding pattern 115 is arranged on the −X direction side, and the connection bonding pattern 116 is arranged on the + X direction side. The connection bonding pattern 116 is connected to the first extraction electrode 223 as described above.

The connection bonding pattern 117 is provided on the opposite side of the Z ′ axis direction (the + Z ′ direction side of the vibrating portion 22 of the crystal resonator plate 2) with respect to the connection bonding patterns 115 and 116 and the connection bonding patterns 115 and 116. The vibrating portion 22 of the crystal vibrating piece 2 is sandwiched therebetween. The connection bonding pattern 117 extends in the X-axis direction in the outer frame portion 23 of the crystal resonator plate 2.

The connection bonding patterns 118 and 119 are provided on both sides of the outer frame portion 23 of the crystal resonator plate 2 in the X-axis direction of the vibration unit 22. That is, the connection bonding patterns 118 and 119 are provided in the vicinity of the long-side edge along the long-side edge of the crystal resonator plate 2, and extend in the Z 'axis direction. The connection bonding pattern 118 is provided between the connection bonding pattern 111 and the connection bonding pattern 113 formed on one principal surface 211 of the crystal resonator plate 2. The connection bonding pattern 119 is provided between the connection bonding pattern 112 and the connection bonding pattern 114.

As shown in FIG. 5, on the other main surface 212 of the crystal vibrating piece 2, in addition to the second excitation electrode 222, the second extraction electrode 224, and the second bonding pattern 252 on the vibration side, eight connection bonds are formed. Pattern 120 ~ 127. Connection bonding patterns 120 to 123 are provided The four corners (corners) of the crystal resonator plate 2 are placed in the outer frame portion 23 of the crystal resonator plate 2. The connection bonding patterns 120 to 123 are provided at a predetermined interval from the vibration-side second bonding pattern 252.

The connection bonding patterns 124 and 125 are provided on both sides of the outer frame portion 23 of the crystal vibrating piece 2 in the Z′-axis direction of the vibration portion 22 of the crystal vibrating piece 2, and the connection bonding patterns 124 are arranged in the −Z ′ direction. Side; the connection bonding pattern 125 is arranged on the + Z 'direction side. The connection bonding patterns 124 and 125 extend in the X-axis direction. The connection bonding pattern 124 is connected to the second extraction electrode 224 as described above.

The connection bonding patterns 126 and 127 are provided on both sides of the outer frame portion 23 of the crystal resonator plate 2 in the X-axis direction of the vibration unit 22. That is, the connection bonding patterns 126 and 127 are provided in the vicinity of the long side edge along the long side edge of the crystal resonator plate 2, and extend in the Z 'axis direction. The connection bonding pattern 126 is provided between the connection bonding pattern 120 and the connection bonding pattern 122 formed on one principal surface 211 of the crystal resonator plate 2. The connection bonding pattern 127 is provided between the connection bonding pattern 121 and the connection bonding pattern 123.

The connection bonding patterns 111 to 127 have the same structure as the vibration-side first bonding pattern 251 and the vibration-side second bonding pattern 252, and can be formed by the steps of forming the vibration-side first bonding pattern 251 and the vibration-side second bonding pattern 252. The bonding patterns 111 to 127. Specifically, the bonding patterns 111 to 127 for the connection are formed by a base PVD film formed by physical vapor deposition on the two main surfaces 211 and 212 of the crystal resonator plate 2 and a physical vapor deposition is performed on the base PVD film. On the other hand, the electrode is formed of a laminated PVD film.

In addition, as shown in FIGS. 4 and 5, the crystal resonator plate 2 is formed with two through holes (a first through hole 151 and a second through hole 152) that penetrate between the one main surface 211 and the other main surface 212. . The first through hole 151 is formed in a region where the connection bonding pattern 112 and the connection bonding pattern 121 overlap, and conducts the connection bonding pattern 112 and the connection bonding pattern 121. The second through hole 152 is formed in a region where the connection bonding pattern 115 and the connection bonding pattern 124 overlap each other, and conducts the connection bonding pattern 115 and the connection bonding pattern 124.

The first through-hole 151 and the second through-hole 152 are formed along the inner wall surface of each of the first through-hole 151 and the second through-hole 152 to form an electrode formed on one main surface 211 and the other main surface 212. The formed electrodes are conductive through electrodes 151a and 152a. The central portions of each of the first through-hole 151 and the second through-hole 152 are hollow portions 151 b and 152 b that penetrate between the one main surface 211 and the other main surface 212.

In the crystal oscillator 101, the first through-holes 151 and the bonding patterns 111 to 114, 118 to 123, 126, and 127 are provided on the outer periphery of the first bonding pattern 251 and the second bonding pattern 252 on the vibration side. side. The second through hole 152 and the connection bonding patterns 115 to 117, 124, and 125 are provided on the inner peripheral side than the vibration-side first bonding pattern 251 and the vibration-side second bonding pattern 252. The connection bonding patterns 111 to 127 are not connected to the first vibration-side bonding pattern 251 and the second vibration-side bonding pattern 252.

The first sealing member 3 uses a bending stiffness (second-order moment in section × Young's modulus) of 1000 [N. mm ² ] or less. Specifically, as shown in FIGS. 2 and 3, the first sealing member 3 is a rectangular parallelepiped substrate composed of a glass wafer, and the other main surface 312 of the first sealing member 3 (the surface bonded to the crystal resonator plate 2) ) Is processed (mirror-finished) into a flat and smooth surface.

A seal-side first bonding pattern 321 is formed on the other main surface 312 of the first sealing member 3 as a seal-side first sealing portion for bonding to the crystal resonator plate 2. The sealing-side first bonding pattern 321 is formed in a ring shape in plan view. The sealing-side first bonding pattern 321 is composed of a base PVD film formed by physical vapor deposition on the first sealing member 3 and an electrode PVD film formed by lamination by physical vapor deposition on the base PVD film. In this embodiment, titanium (Ti) is used as the base PVD film, and gold (Au) is used as the electrode PVD film. The seal-side first bonding pattern 321 is a non-tin (Sn) pattern.

As shown in FIG. 2, on one main surface 311 (the surface on which the IC chip 5 is mounted) of the first sealing member 3, six electrode patterns (including a mounting pad on which the IC chip 5 as an oscillation circuit element is mounted) are formed ( Four electrode patterns 371 and two electrode patterns 372). The four electrode patterns 371 are electrode patterns for wire-bonding the crystal oscillator 101 to a circuit board (not shown), and one end (central side) has a mounting pad on which the IC chip 5 is mounted; There is a wire bonding pad at the end (outer peripheral side). The two electrode patterns 372 are electrode patterns for connecting the IC chip 5 to the first excitation electrode 221 and the second excitation electrode 222, and a mounting pad on which the IC chip 5 is mounted on one end (central side). The IC chip 5 is bonded to the electrode patterns 371 and 372 with a metal bump (such as a gold bump) 38 (see FIG. 1) by an FCB (Flip Chip Bonding) method.

When the piezoelectric resonator of the present invention is a crystal resonator without an IC chip mounted thereon, the crystal resonator is connected to an IC chip mounted as a separate chip on a circuit board to function as an oscillator. In this case, one of the first sealing members 3 In each of the main surfaces 311, only an electrode pattern for connecting the first excitation electrode 221 and the second excitation electrode 222 of the crystal resonator is formed, and the electrode pattern is connected to the IC chip.

As shown in FIG. 3, on the other main surface 312 of the first sealing member 3, in addition to the first bonding pattern 321 on the sealing side, nine connection patterns 128 to 136 and wiring patterns 33 are formed. The connection bonding patterns 128 to 131 are provided in a region of four corners (corner portions) of the first sealing member 3. The connection bonding patterns 128 to 131 are provided at a predetermined interval from the sealing-side first bonding pattern 321.

The connection bonding patterns 132 and 133 are provided on the A2 direction side of the first sealing member 3. The connection bonding patterns 132 and 133 are arranged along the B-axis direction. The connection bonding pattern 132 is arranged on the B1 direction side, and the connection bonding pattern 133 is arranged on the B2 direction side. In addition, the A1 direction and A2 direction in FIG. 3 correspond to the + Z 'direction and the -Z' direction in FIG. 4, respectively, and the B1 direction and B2 direction correspond to the -X direction and + X direction, respectively.

The connection bonding pattern 134 is provided on the A1 direction side of the first sealing member 3 and extends along the B-axis direction. In addition, between the connection bonding pattern 132 and the connection bonding pattern 134, the wiring pattern 33 and the connection bonding patterns 132 and 134 are integrally formed. That is, the connection pattern 132 is connected to the A2 direction side of the wiring pattern 33, and the connection pattern 134 is connected to the A1 direction side.

The connection bonding patterns 135 and 136 are provided on both sides in the B-axis direction of the first sealing member 3. The connection bonding patterns 135 and 136 are provided in the vicinity of the long side edge along the long side edge of the first sealing member 3 and extend in the A-axis direction. The connection bonding pattern 135 is provided on the other main surface 312 of the first sealing member 3 and is a connection bonding pattern. Case 128 and the bonding pattern 130 for connection. The connection bonding pattern 136 is provided between the connection bonding pattern 129 and the connection bonding pattern 131.

The connection bonding patterns 128 to 136 have the same structure as the sealing-side first bonding pattern 321, and the bonding bonding patterns 128 to 136 can be formed through a process of forming the sealing-side first bonding pattern 321. Specifically, the connection bonding patterns 128 to 136 are formed by a base PVD film formed by physical vapor deposition on the other main surface 312 of the first sealing member 3, and by physical vapor deposition on the base PVD film. An electrode PVD film formed by stacking.

In addition, as shown in FIGS. 2 and 3, the first sealing member 3 is formed with three through holes (third to fifth through holes 153 to 155) penetrating between the one main surface 311 and the other main surface 312. . The third through hole 153 is formed in a region where one of the electrode patterns 371 (bottom right in FIG. 2) overlaps the connection bonding pattern 129, and conducts the electrode pattern 371 and the connection bonding pattern 129. The fourth through hole 154 is formed in a region where one of the electrode patterns 372 (the right side in FIG. 2) overlaps the connection bonding pattern 134, and conducts the electrode pattern 372 and the connection bonding pattern 134. The fifth through hole 155 is formed in a region where the other side (left side in FIG. 2) of the electrode pattern 372 overlaps the connection bonding pattern 133, and conducts the electrode pattern 372 and the connection bonding pattern 133.

In the third to fifth through holes 153 to 155, as shown in FIG. 3, along the inner wall surfaces of the third to fifth through holes 153 to 155, electrodes for forming the main surface 311 and other electrodes are formed respectively. The electrodes formed on one main surface 312 are conductive through electrodes 153a to 155a. In addition, the central portions of the third to fifth through holes 153 to 155 are hollow portions 153 b to 155 b that penetrate between the one main surface 311 and the other main surface 312.

In the crystal oscillator 101, the third through hole 153 and the connection bonding patterns 128 to 131, 135, and 136 are provided on the outer peripheral side than the sealing-side first bonding pattern 321. The fourth through-hole 154, the fifth through-hole 155, the connection bonding patterns 132 to 134, and the wiring pattern 33 are provided so as to be located on the inner peripheral side than the sealing-side first bonding pattern 321. The connection bonding patterns 128 to 136 are not electrically connected to the sealing-side first bonding pattern 321. The wiring pattern 33 is also not electrically connected to the sealing-side first bonding pattern 321.

The second sealing member 4 adopts a bending stiffness (second-order moment in section × Young's modulus) of 1000 [N. mm ² ] or less. Specifically, as shown in FIGS. 6 and 7, the second sealing member 4 is a rectangular parallelepiped substrate composed of a glass wafer, and one main surface 411 (the surface to which the crystal resonator plate 2 is bonded) of the second sealing member 4 is Processing (mirror processing) into a flat and smooth surface.

A sealing-side second bonding pattern 421 is formed on one main surface 411 of the second sealing member 4 as a sealing-side second sealing portion for bonding to the crystal resonator plate 2. The sealing-side second bonding pattern 421 is formed in a ring shape in plan view. The sealing-side second bonding pattern 421 is composed of a base PVD film formed by physical vapor deposition on the second sealing member 4 and an electrode PVD film formed by lamination by physical vapor deposition on the base PVD film. In this embodiment, titanium is used as the base PVD film, and gold is used as the electrode PVD film. The sealing-side second bonding pattern 421 is a non-tin pattern.

As shown in FIG. 6, on one principal surface 411 of the second sealing member 4, eight connection bonding patterns 137 to 144 are formed in addition to the second bonding pattern 421 on the sealing side. The connection bonding patterns 137 to 140 are provided in a region of four corners (corner portions) of the second sealing member 4. The connection bonding patterns 137 to 140 are provided at a predetermined interval from the sealing-side second bonding pattern 421.

The connection bonding patterns 141 and 142 are provided on both sides in the A-axis direction of the second sealing member 4 and extend in the B-axis direction. Here, the connection bonding pattern 141 is arranged on the A1 direction side, and the connection bonding pattern 142 is arranged on the A2 direction side. In addition, the A1 direction and A2 direction in FIG. 6 correspond to the + Z 'direction and the -Z' direction in FIG. 4, respectively, and the B1 direction and B2 direction correspond to the -X direction and + X direction, respectively.

The connection bonding patterns 143 and 144 are provided on both sides in the B-axis direction of the second sealing member 4. The connection bonding patterns 143 and 144 are provided in the vicinity of the long-side edge along the long-side edge of the second sealing member 4 and extend in the A-axis direction. The connection bonding pattern 143 is provided between the connection bonding pattern 137 and the connection bonding pattern 139 formed on one principal surface 411 of the second sealing member 4. The connection bonding pattern 144 is provided between the connection bonding pattern 138 and the connection bonding pattern 140.

The connection bonding patterns 137 to 144 have the same structure as the sealing-side second bonding pattern 421, and the bonding bonding patterns 137 to 144 can be formed through a process of forming the sealing-side second bonding pattern 421. Specifically, the connection bonding patterns 137 to 144 are formed by a base PVD film formed by physical vapor deposition on one principal surface 411 of the second sealing member 4 and a physical PVD film formed on the base PVD film and stacked. The layer is formed of an electrode PVD film.

A shield electrode 431 is provided on the other main surface 412 of the second sealing member 4 (the main surface on the outer side that is not opposed to the crystal resonator plate 2). The shield electrode 431 is composed of a base PVD film formed by physical vapor deposition on the other main surface 412 and an electrode PVD film formed by lamination by physical vapor deposition on the base PVD film.

As shown in FIGS. 6 and 7, the second sealing member 4 is formed with one through hole (sixth through hole 156) penetrating between the one main surface 411 and the other main surface 412. The sixth through hole 156 is formed in a region where the connection bonding pattern 138 and the shield electrode 431 overlap, and conducts the connection bonding pattern 138 and the shield electrode 431.

In the sixth through hole 156, as shown in FIG. 6, a through electrode 156a is formed along the inner wall surface of the sixth through hole 156 to conduct an electrode formed on one main surface 411 and an electrode formed on the other main surface 412. . The central portion of the sixth through hole 156 is a hollow portion 156 b that penetrates between the one main surface 411 and the other main surface 412.

In the crystal oscillator 101, the sixth through-hole 156 and the connection bonding patterns 137 to 140, 143, and 144 are provided on the outer peripheral side than the sealing-side second bonding pattern 421. The connection bonding patterns 141 and 142 are provided on the inner peripheral side than the sealing-side second bonding pattern 421. The connection bonding patterns 137 to 144 are not electrically connected to the sealing-side second bonding pattern 421.

In the crystal oscillator 101 including the crystal vibrating piece 2, the first sealing member 3, and the second sealing member 4, the crystal vibrating piece 2 and the first sealing member 3 are first bonded to each other on the vibration-side first bonding pattern 251 and the sealing side. The pattern 321 is diffusion-bonded in a state where the patterns 321 are superimposed, and the crystal vibrating piece 2 and the second sealing member 4 are diffusion-bonded in a state where the second-side bonding pattern 252 on the vibration side and the second-side bonding pattern 421 on the sealing side are superimposed, so that Sandwich structure of the package 12. This makes it possible to hermetically seal the internal space 13 of the package 12, that is, the accommodation space of the vibration unit 22 without using a special bonding material such as an adhesive.

Further, as shown in FIGS. 1 and 8, the first vibration-side bonding pattern 251 and the seal-side first bonding pattern 321 themselves are the bonding members 15 a generated after the diffusion bonding, and the vibration-side second bonding pattern 15 a The bonding pattern 252 and the sealing-side second bonding pattern 421 themselves become a bonding member 15b generated after diffusion bonding.

At this time, the above-mentioned connection bonding patterns are also diffusion-bonded in a state where they are overlapped with each other. Specifically, the connection bonding patterns 111 to 114 on the four corners of the crystal resonator plate 2 and the connection bonding patterns 128 to 131 on the four corners of the first sealing member 3 are diffusion-bonded. The connection bonding patterns 118 and 119 in the vicinity of the long edge of the crystal resonator plate 2 and the connection bonding patterns 135 and 136 in the vicinity of the long edge of the first sealing member 3 are diffusion-bonded. The connection bonding pattern 115 of the crystal resonator plate 2 and the connection bonding pattern 132 of the first sealing member 3 are diffusion-bonded. The connection bonding pattern 116 of the crystal resonator plate 2 and the connection bonding pattern 133 of the first sealing member 3 are diffusion-bonded. The connection bonding pattern 117 of the crystal resonator plate 2 and the connection bonding pattern 134 of the first sealing member 3 are diffusion-bonded.

In addition, the bonding patterns 111 to 114 and the bonding patterns 128 to 131 themselves are bonding members 16 a to 16 d generated after diffusion bonding. The connection bonding patterns 118 and 119 and the connection bonding patterns 135 and 136 themselves become the bonding members 16e and 16f generated after the diffusion bonding. The connection bonding pattern 115 and the connection bonding pattern 132 themselves become a bonding member 16 g generated after diffusion bonding. The connection bonding pattern 116 and the connection bonding pattern 133 themselves become a bonding member 16h generated after diffusion bonding. The connection bonding pattern 117 and the connection bonding pattern 134 themselves become a bonding member 16i generated after diffusion bonding. These bonding members 16a to 16i have a function of connecting the crystal resonator plate 2 and the first sealing member 3, and a function of conducting a through electrode of a through hole. There is also an effect of preventing the first sealing member 3 from being deformed (bent) when the crystal resonator plate 2 is joined to the first sealing member 3.

Similarly, the connection bonding patterns 120 to 123 on the four corners of the crystal resonator plate 2 and the connection bonding patterns 137 to 140 on the four corners of the second sealing member 4 are diffusion-bonded. The bonding patterns 126 and 127 for connection in the vicinity of the long side edge of the crystal resonator plate 2 and the bonding patterns 143 and 144 for connection in the vicinity of the long side edge of the second sealing member 4 are diffusion-bonded. The bonding pattern 124 for connection of the crystal resonator plate 2 and the bonding pattern 142 for connection of the second sealing member 4 are diffusion-bonded. The bonding pattern 125 for connection of the crystal resonator plate 2 and the bonding pattern 141 for connection of the second sealing member 4 are diffusion-bonded.

In addition, the bonding patterns 120 to 123 and the bonding patterns 137 to 140 are bonding members 17 a to 17 d which are generated after diffusion bonding. The connection bonding patterns 126 and 127 and the connection bonding patterns 143 and 144 themselves become the bonding members 17e and 17f generated after the diffusion bonding. The connection bonding pattern 124 and the connection bonding pattern 142 themselves are 17 g of bonding members generated after diffusion bonding. The connection bonding pattern 125 and the connection bonding pattern 141 themselves become a bonding member 17h generated after diffusion bonding. These joining members 17a to 17h have the function of joining the crystal vibrating piece 2 and the second sealing member 4 as well as the function of conducting the through electrode of the through hole, and also sealing the crystal vibrating piece 2 and the second. When the members 4 are joined, the second sealing member 4 is prevented from deforming (bending).

In the crystal oscillator 101, the first excitation electrode 221 is connected to the IC chip 5 via a first electrical path, and the second excitation electrode 222 is connected to the IC chip 5 via a second electrical path. The first electrical path includes a first lead-out electrode 223, a bonding member 16h, a through electrode 155a, and an electrode pattern 372. The second electrical path is formed by the second lead-out electrode 224 and the bonding member. 17g, a through electrode 152a, a bonding member 16g, a wiring pattern 33, a bonding member 16i, a through electrode 154a, and an electrode pattern 372.

The shield electrode 431 formed on the other main surface 412 of the second sealing member 4 is used to prevent capacitive coupling between the excitation electrode, the internal wiring, and the signal wiring existing in the circuit substrate within the crystal oscillator 101. If capacitive coupling occurs between the excitation electrodes, internal wiring inside the package, and signal wiring located outside the package, the frequency or other characteristics may be affected by the potential change in the signal wiring. For example, when the circuit board mounted on the crystal oscillator 101 is a multilayer printed circuit board, there may be signal wiring in a region overlapping the first excitation electrode 221 and the second excitation electrode 222. In the sandwich-type piezoelectric vibration element, since the package is thin, capacitive coupling is liable to occur. That is, the capacitive coupling between the first excitation electrode 221 and the second excitation electrode 222 inside the crystal oscillator 101 and the signal wiring in the circuit substrate cannot be ignored, so it is necessary to provide a shield electrode 431 to prevent the capacitive coupling from occurring.

The shield electrode 431 needs to be applied with a fixed potential, that is, a fixed potential that does not change during the operation of the crystal oscillator 101. As such a fixed potential, a GND (ground) potential is preferably used. Therefore, the shield electrode 431 is electrically connected to one of the electrode patterns 371 formed on one principal surface 311 of the first sealing member 3 via the third electrical path. That is, the electrode pattern 371 connected to the shield electrode 431 is a wiring for supplying the GND potential to the IC chip 5. Accordingly, the GND potential is always applied to the shield electrode 431. The third electrical path includes a through electrode 153a, a bonding member 16b, a through electrode 151a, a bonding member 17b, and a through electrode 156a.

In the crystal oscillator 101 having the above-mentioned structure, an IC chip 5 is mounted on an outer surface (one main surface 311) of the first sealing member 3, and a wire bonding surface is formed on a surface that is the same surface as the IC chip mounting surface. Mounting pad (electrode pattern 371). By providing the mounting pads for wire bonding in this manner, a non-surface-mounted wire bonding mounted crystal oscillator 101 can be realized. In addition, by wire bonding, the crystal oscillator 101 can be easily built into the package by SIP mounting.

In addition, the wire bonding mounting surface needs to have a height for pulling the wire. On the other hand, the thickness of the IC chip 5 in the IC chip mounting surface increases the height. Therefore, by making the mounting surface of the IC chip and the mounting surface of the wire bonding pad the same surface, it is possible to prevent the component height of the crystal oscillator 101 from increasing.

In addition, since a mounting pad for wire bonding is provided on the outer surface of the first sealing member 3, mounting terminals and the like are not formed on the outer surface (the other main surface 412) of the second sealing member 4, but are adhered to the circuit board. Butt joint surface. In addition, when a circuit board (for example, a multilayer printed circuit board) has a signal wiring facing the first excitation electrode 221 and the second excitation electrode 222, a shield electrode may be provided on the outer surface of the second sealing member 4. 431 to prevent capacitive coupling between the excitation electrode and the signal wiring. Since the crystal oscillator 101 having a sandwich structure has a thin structure, the first excitation electrode 221 and the second excitation electrode 222 are likely to be capacitively coupled to other wirings, and such shielding measures are effective.

In the crystal oscillator 101 with a sandwich structure, the first excitation electrode 221 and the second excitation electrode 222 may be capacitively coupled to the electrode pattern formed on the first sealing member 3. In order to prevent such capacitive coupling from causing changes in the characteristics of the crystal oscillator 101 Preferably, the mounting pads for wire bonding are arranged so as not to overlap the first excitation electrode 221 and the second excitation electrode 222 (or make the overlapping area as small as possible) when viewed from above. Similarly, it is preferable that the mounting pads of the IC chip 5 are arranged so as not to overlap with the first excitation electrode 221 and the second excitation electrode 222 in a plan view (or to make the overlapping area as small as possible). In addition, it is preferable that other wirings (electrode patterns 371 and 372) in the first sealing member 3 and other wirings (the first extraction electrode 223, the second extraction electrode 224, and the wiring pattern 33) in the crystal resonator plate 2 are also preferably used. Etc.) is arranged so as not to overlap with other electrodes or wiring in a plan view.

In the crystal oscillator 101, it is preferable that a mounting pad for wire bonding provided at an outer peripheral side end portion of the electrode pattern 371 is disposed in a region overlapping the outer frame portion 23 of the crystal resonator plate 2 in a plan view. In this case, since the mounting pad is disposed so as to face the outer frame portion 23 while avoiding the internal space of the crystal oscillator 101 in the wire bonding process, it is possible to avoid the crystal oscillator from being pressed by the wire bonding. 101 deformation occurred.

In addition, the shield electrode 431 shown in FIG. 7 is formed on almost the entire surface of the other main surface 412 of the second sealing member 4, but the present invention is not limited to this, and may correspond to the electrodes inside the crystal oscillator 101 and The shape of the wiring patterned the shield electrode 431. FIG. 9 shows the shape of the shield electrode 431 corresponding to the shape of the first excitation electrode 221, the second excitation electrode 222, the first extraction electrode 223, the second extraction electrode 224, the wiring pattern 33, and the bonding members 16g to 16i, 17g, and 17h. Patterned example.

By patterning the shield electrode 431 according to the shape of the excitation electrode and the wiring that needs to be shielded in this way, the area of formation of the shield electrode 431 can be minimized, and the parasitic capacitance generated by the shield electrode 431 can be reduced. Reduced parasitic capacitance prevents A decrease in the variable number of the frequency of the excitation electrode occurs, making the frequency adjustment of the crystal oscillator 101 easier.

In the crystal oscillator 101, an IC chip 5 is mounted on the first sealing member 3. As shown in FIG. 10, the IC chip 5 is fixed by a sealing resin 6 formed around the IC chip 5. In order to prevent the sealing resin 6 from flowing onto the mounting pad for wire bonding, a groove 39 may be formed. The groove 39 may be formed to surround the entire periphery of the IC chip 5 (as shown in FIG. 11), or may be formed to individually surround the mounting pad for wire bonding in the electrode pattern 371 (as shown in FIG. 12).

In addition, as the shield electrode, in addition to the shield electrode 431 formed on the other main surface 412 of the second sealing member 4, as shown in FIG. 13, a shield electrode formed on one main surface 311 of the first sealing member 3 may be used. Shield electrode 373. The shield electrode 373 is for preventing a potential change caused by the IC chip 5, and is configured to cover a region where the electrode patterns 371 and 372 do not exist in the mounting region of the IC chip 5. The shield electrode 373 is connected to one of the electrode patterns 371, specifically, the electrode pattern 371 for supplying a GND potential to the IC chip 5. Therefore, the GND potential is always applied to the shield electrode 373.

The crystal oscillator 101 according to this embodiment is suitable for a SIP module in which a plurality of chips are enclosed in a package. FIG. 14 is a cross-sectional view showing a schematic configuration of a SIP module 500 using the crystal oscillator 101.

In the SIP module 500 shown in FIG. 14, a plurality of wafers are mounted on the same circuit substrate 501, and the crystal oscillator 101 is mounted on the circuit substrate 501 as one of the wafers. In the example of FIG. 14, in addition to the crystal oscillator 101, LSI chips 102 and 103 are mounted on the SIP module 500. The LSI chips 102 and 103 are, for example, a processor or a memory crystal sheet. Of course, the number of chips mounted in the SIP module 500 is not limited. The circuit board 501 may be a multilayer wiring board.

In the SIP module 500, it is preferable that all the plurality of chips mounted are mounted by the same mounting method. Unifying the method of mounting the wafers can prevent the mounting process of mounting the wafers on the circuit board 501 from becoming complicated. In SIP, various components to be built-in are often mounted on a circuit board by wire bonding. Since the crystal oscillator 101 has a wire-bonded mounting terminal, it is suitable for use in SIP.

In the SIP module 500, the crystal oscillator 101 and the LSI wafers 102 and 103 are mounted so that the back surface of the wafer is adhered to the circuit substrate 501 by an adhesive or the like, and the wire bonding mounting terminals on the top surface of the wafer are connected to the wiring of the circuit substrate 501. Connected by wires. The entire wafer mounting surface in the circuit board 501 is sealed with a sealing resin 502. That is, the crystal oscillator 101 and the LSI chips 102 and 103 are enclosed in a single package.

In addition, in the SIP module 500, if the crystal resonator is mounted instead of the crystal oscillator 101 on the circuit substrate 501, the IC chip constituting the oscillator together with the crystal resonator can be used as a separate chip from the crystal resonator. The wafer is mounted on a circuit substrate 501. In addition, since the crystal resonator and the IC chip are mounted on the circuit substrate 501 by wire bonding, respectively, the crystal resonator and the IC chip are connected to function as an oscillator.

In the above embodiment, the first sealing member 3 and the second sealing member 4 are made of glass, but the invention is not limited to this, and quartz crystal may be used. In addition, the piezoelectric vibration plate uses an AT-cut quartz crystal plate, but is not limited to this, and other than an AT-cut quartz crystal plate may be used. The piezoelectric vibration plate may be other materials as long as it is a piezoelectric material, and may be, for example, lithium niobate, lithium tantalate, or the like.

In addition, by constituting the first sealing member 3 and the second sealing member 4 with a quartz crystal, the thermal expansion coefficients of the crystal vibrating piece 2, the first sealing member 3, and the second sealing member 4 are the same, and the crystal vibrating piece 2, the first The deformation of the package 12 caused by the thermal expansion difference between the first sealing member 3 and the second sealing member 4 can improve the airtightness of the internal space 13 that hermetically seals the vibrating portion 22 of the crystal resonator plate 2. In addition, the distortion caused by the deformation of the package 12 may be transmitted to the first excitation electrode 221 and the second excitation electrode 222 through the connection portion 24 and become a cause of frequency variation. All of the sealing member 3 and the second sealing member 4 use a quartz crystal, and such a frequency variation can be suppressed.

In addition, in the above embodiment, the bonding between the first sealing member 3 and the crystal vibrating piece 2 and the bonding between the crystal vibrating piece 2 and the second sealing member 4 are both realized by diffusion bonding of gold and gold, but not It is limited to this, and a brazing material may be used for joining.

The above-mentioned embodiments are merely examples of various aspects, and cannot be used as a basis for limited interpretation. That is, the technical scope of the present invention is defined by the description of the scope of patent application, and is not explained by the above embodiments alone. In addition, deformations or changes within the scope equivalent to the scope of patent application are included in the scope of the present invention.

Claims (9)

A piezoelectric vibration element includes a first excitation electrode formed on one main surface of a substrate, and a pressure of a second excitation electrode paired with the first excitation electrode formed on the other main surface of the substrate. An electric vibration plate; a first sealing member covering the first excitation electrode of the piezoelectric vibration plate; and a second sealing member covering the second excitation electrode of the piezoelectric vibration plate, the first sealing member Engaged with the piezoelectric vibration plate, the second sealing member is engaged with the piezoelectric vibration plate to form a gas-tightly sealed portion of a vibration portion of the piezoelectric vibration plate including the first excitation electrode and the second excitation electrode. In the internal space, the piezoelectric vibration element is characterized in that: a mounting pad for wire bonding is formed on an outer surface of the first sealing member; and a shield electrode is formed on the outer surface of the second sealing member. The piezoelectric vibration element according to claim 1, wherein the piezoelectric vibration plate is bonded to the first sealing member, and the piezoelectric vibration plate is bonded to the second sealing member through a gold-containing one. A diffusion bonding layer; an uppermost layer of each of the first excitation electrode and the second excitation electrode is a gold layer. The piezoelectric vibration element according to claim 1 or 2, wherein the shield electrode is patterned in accordance with individual shapes of electrodes and wirings inside the piezoelectric vibration element. The piezoelectric vibration element according to claim 1 or 2, wherein the mounting pad for wire bonding is configured not to overlap the first excitation electrode and the second excitation electrode. The piezoelectric vibration element according to claim 1 or 2, wherein the mounting pad for wire bonding is disposed to face the frame surrounding the internal space. The piezoelectric vibration element according to claim 1 or 2, wherein an IC chip is mounted on an outer surface of the first sealing member. The piezoelectric vibration element according to claim 6, wherein a mounting terminal of the IC chip is formed on an outer surface of the first sealing member, and the mounting terminal of the IC chip is configured not to be excited with the first The electrode and the second excitation electrode overlap. The piezoelectric vibration element according to claim 6, wherein a groove is formed around the mounting pad for wire bonding. A system integration package (SIP) module, which is provided with the piezoelectric vibration element according to any one of claims 1 to 8.