JP2010056929A - Piezoelectric component - Google Patents
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本発明は、圧電部品、例えば、圧電発振器、圧電振動子、に関し、とくに圧電部品を構成するベース部及びカバー部を、圧電素子部の圧電素子と直接接合可能な材料、例えば、水晶、ガラス材料から形成し、圧電素子の気密保持を向上させるとともに、圧電部品の小型化、低背化を図った圧電部品に関する。 The present invention relates to a piezoelectric component, for example, a piezoelectric oscillator, a piezoelectric vibrator, and more particularly, a material capable of directly joining a base portion and a cover portion constituting the piezoelectric component to a piezoelectric element of the piezoelectric element portion, for example, a crystal, a glass material. In addition to improving the hermeticity holding of the piezoelectric element, the piezoelectric component is reduced in size and height.
従来、水晶振動子、水晶フィルター、水晶発振器等の表面実装型圧電部品は、図３に示すように、底面に端子電極２３を設けたベース部材２０に絶縁材及び外部電極を介して水晶片２１を接続配置し、金属製のリッド部材２２をはんだあるいはろう材を用いてベース部材２０に接合させて、水晶片２１を内部に気密に封止していた。 Conventionally, as shown in FIG. 3, a surface-mount type piezoelectric component such as a crystal resonator, a crystal filter, or a crystal oscillator has a crystal piece 21 via an insulating material and an external electrode on a base member 20 having a terminal electrode 23 on the bottom surface. The metal lid member 22 is joined to the base member 20 by using solder or brazing material, and the crystal piece 21 is hermetically sealed inside.
しかしながら、このような従来の圧電部品では、圧電素子の封入及び気密確保に金属製のカバー（リッド部材）が用いられているので、圧電素子の封入等のほかに、外来ノイズ等のシールド効果が期待できるものの、これらの金属製のカバーを、例えばシーム溶接封止等によりカバーをベース部材に固定させるためには、一定のシール巾が必要であった。そのため、圧電部品の小型化、低背化が極めて困難であった。 However, in such a conventional piezoelectric component, a metal cover (lid member) is used to encapsulate the piezoelectric element and ensure airtightness. Therefore, in addition to the encapsulation of the piezoelectric element, etc., there is a shielding effect such as external noise. Although expected, in order to fix these metal covers to the base member by, for example, seam welding sealing, a certain seal width is required. Therefore, it has been extremely difficult to reduce the size and height of the piezoelectric component.
また、従来の圧電部品では、個々の圧電部品毎にカバーを用意し、それぞれシーム溶接封止するので、その生産性が悪かった。
本発明が解決しようとする課題は、圧電部品の小型化、低背化と、外来ノイズのシールド効果の向上、ならびに圧電部品の製造の際の生産性の向上である。 The problem to be solved by the present invention is to reduce the size and height of the piezoelectric component, to improve the shielding effect against external noise, and to improve the productivity when manufacturing the piezoelectric component.
前記した課題を解決するため、本発明は、圧電素子を内蔵し、かつ、該圧電素子を内部に気密確保する金属を蒸着あるいはスパッタリング可能な非導通材料からなる部材の表面に金属膜を蒸着またはスパッタリングにより形成し、外来ノイズのシールド効果をもたせたことを特徴とする。 In order to solve the above-described problems, the present invention provides a method for depositing a metal film on the surface of a member made of a non-conducting material capable of depositing or sputtering a metal containing a piezoelectric element and ensuring the hermeticity of the piezoelectric element. It is formed by sputtering and has a shielding effect against external noise.
これにより、外来ノイズのシールド効果が向上するとともに、圧電部品の小型化、低背化が促進される。 Thereby, the shielding effect of the external noise is improved and the miniaturization and the low profile of the piezoelectric component are promoted.
以下、本発明の圧電部品を、圧電振動子の実施例について、詳細に説明する。 Hereinafter, the piezoelectric component of the present invention will be described in detail with respect to examples of the piezoelectric vibrator.
図１は、本発明の圧電部品の実施例である圧電振動子の縦断面図を示す。 FIG. 1 is a longitudinal sectional view of a piezoelectric vibrator which is an embodiment of the piezoelectric component of the present invention.
この圧電振動子１は、図１に示すように、水晶またはガラス系材料からなるベース部２と、このベース部２の上面に接合、積層された圧電素子部３及びこの圧電素子部３を覆うようにして接合、積層されたカバー部４と、からなる。 As shown in FIG. 1, the piezoelectric vibrator 1 covers a base portion 2 made of crystal or glass material, a piezoelectric element portion 3 bonded and laminated on the upper surface of the base portion 2, and the piezoelectric element portion 3. Thus, the cover portion 4 is joined and laminated.
まず、ベース部２には、その上面に断面凹状のキャビティ７が形成され、キャビティ７の底部には金属膜２ａが、蒸着またはスパッタリングにより形成され、また、ベース部２の底面には、端子電極８が配設されている。 First, a cavity 7 having a concave cross section is formed on the upper surface of the base portion 2, a metal film 2 a is formed on the bottom portion of the cavity 7 by vapor deposition or sputtering, and a terminal electrode is formed on the bottom surface of the base portion 2. 8 is disposed.
また、圧電素子部３には、その中央部に圧電現象を発生する圧電素子６が形成される。この圧電素子部３は、水晶、セラミック材料、あるいは半導体材料から形成する。 The piezoelectric element portion 3 is formed with a piezoelectric element 6 that generates a piezoelectric phenomenon at the center thereof. The piezoelectric element portion 3 is formed from quartz, a ceramic material, or a semiconductor material.
さらに、カバー部４には、その下面に、断面凹状のキャビティ５が形成され、圧電素子部３をその上面から覆うようにして、圧電素子部３の上面に接合、積層される。また、カバー部４の上面には、Ａｕを主材料とした金属膜４ａが蒸着またはスパッタリングにより形成されている。 Further, the cover 4 is formed with a cavity 5 having a concave cross section on the lower surface thereof, and is bonded and laminated on the upper surface of the piezoelectric element portion 3 so as to cover the piezoelectric element portion 3 from the upper surface. On the upper surface of the cover part 4, a metal film 4a mainly made of Au is formed by vapor deposition or sputtering.
とくに、本発明の圧電部品の実施例である圧電振動子では、圧電素子６を内部に保持し、該圧電素子６の気密を確保する圧電素子部３、ベース部２及びカバー部４を、水晶、ガラス材料のような、金属（Ａｕ）を蒸着またはスパッタリングできる非導通な物質から形成し、それらの部材の壁面（表面）に金属膜を、図２（ａ）及び図２（ｂ）のぼかして示す部分に図示のように、蒸着またはスパッタリングにより形成して、外来ノイズ、ＥＭＩ（電磁気妨害）ノイズのシールド効果をもたせるように構成する。 In particular, in the piezoelectric vibrator as an embodiment of the piezoelectric component of the present invention, the piezoelectric element 6 that holds the piezoelectric element 6 inside and ensures the hermeticity of the piezoelectric element 6, the base part 2, and the cover part 4 are made of quartz. 2, formed from a non-conductive substance such as a glass material on which metal (Au) can be deposited or sputtered, and a metal film on the wall surface (surface) of those members, the blur of FIGS. 2A and 2B As shown in the figure, it is formed by vapor deposition or sputtering so as to have a shielding effect against external noise and EMI (electromagnetic interference) noise.
また、本発明の圧電部品では、カバー部４及びベース部２を、ガラス系材料あるいは圧電素子６と同一の組成からなる材料、例えば水晶、で構成し、圧電素子部３とカバー部４及び圧電素子部３とベース部２とを熱圧着による分子間結合、例えばシロキサン結合、により接合して積層し、カバー部４あるいはベース部２の外部とのシールド効果をさらに向上させるようにしてある。 Further, in the piezoelectric component of the present invention, the cover part 4 and the base part 2 are made of a glass material or a material having the same composition as that of the piezoelectric element 6, for example, quartz, and the piezoelectric element part 3, the cover part 4 and the piezoelectric element. The element part 3 and the base part 2 are joined and laminated by an intermolecular bond by thermocompression bonding, for example, a siloxane bond, to further improve the shielding effect against the cover part 4 or the outside of the base part 2.
ここで、シロキサン結合（Ｓｉ−Ｏ−Ｓｉ）では、直接接合の場合は、接合部材の接合面を鏡面加工して親水化（ＯＨ基化）して仮接合し、これを加熱してシロキサン結合（Ｓｉ−Ｏ−Ｓｉ）によって原子間レベルで接合する。 Here, in the case of siloxane bond (Si-O-Si), in the case of direct bonding, the bonding surface of the bonding member is mirror-finished to be hydrophilized (OH group) and temporarily bonded, and this is heated to siloxane bond Joining at an interatomic level by (Si—O—Si).
例えば、水晶板の直接接合では、まず水晶板接合面を鏡面加工して、親水化する。すなわち、水晶板のＳｉ（珪素）にＯＨ基を結合させ、水晶板の接合面同士を重ね合わせて仮接合し、まずＯＨ基の結合とする。 For example, in the direct bonding of the quartz plates, first, the quartz plate joining surface is mirror-finished to make it hydrophilic. That is, an OH group is bonded to Si (silicon) of the quartz plate, and the bonding surfaces of the quartz plate are overlapped and temporarily bonded, and first, the bonding of the OH group is performed.
次に、水晶の転移点温度未満の温度、例えば３００℃で仮接合した水晶板の加熱処理を行い、Ｈ2Ｏ（水）を脱水してＳｉ−Ｏ−Ｓｉ（シロキサン基）結合する。 Next, heat treatment is performed on the crystal plate temporarily bonded at a temperature lower than the crystal transition temperature, for example, 300 ° C., and H 2 O (water) is dehydrated to bond Si—O—Si (siloxane group).
水晶片の直接接合は、２枚の水晶板をシロキサン結合による直接接合するので、原子間レベルでの接合となる。この直接接合では、接合面をも親水化してシロキサン結合（Ｓｉ−Ｏ−Ｓｉ）とするが、さらに水晶板の接合強度を高める場合には、次のようにしてもよい。 In the direct bonding of the crystal pieces, since the two crystal plates are directly bonded by siloxane bonds, the bonding is performed at the atomic level. In this direct bonding, the bonding surface is also hydrophilized to form a siloxane bond (Si—O—Si). However, when the bonding strength of the quartz plate is further increased, the following may be performed.
すなわち、水晶板の一方を親水化（ＯＨ基）し、他方を疎水化（Ｈ基）して仮接合し、これを転移点温度（５７３℃）未満で加熱する。これにより、Ｈ2Ｏが除去され、Ｓｉ−Ｓｉ結合となる（特開２０００−２６９１０６号公報参照）。 That is, one of the quartz plates is hydrophilized (OH group), the other is hydrophobized (H group) and temporarily joined, and this is heated at a transition temperature (573 ° C.) or lower. As a result, H 2 O is removed and Si—Si bonds are formed (see JP 2000-269106 A).
なお、疎水化は、親水面に対する、例えば希釈フッ素酸（ＨＦ）によって得られる。これにより、Ｓｉの直接結合となり、さらに接合強度を高めることができ、接合面からの溶液の侵入を防止できる。 Hydrophobization is obtained, for example, with diluted fluoric acid (HF) on the hydrophilic surface. Thereby, it becomes a direct bond of Si, joint strength can be raised further, and the penetration | invasion of the solution from a joining surface can be prevented.
また、図２は、本発明の圧電部品の実施例の圧電振動子を、カバー部、圧電素子部及びベース部に分解して示した分解図であって、図２（ａ）は、ベース部２のキャビティ内に金属膜を蒸着またはスパッタリングで形成しない例を、また、図２（ｂ）は、ベース部のキャビティ内に金属膜を蒸着またはスパッタリングで形成した例を示す。両実施例では、これらの部材にスルーホール９を形成し、このスルーホール９をＡｕ等により埋めて貫通電極を形成して、カバー部、圧電素子部及びベース部の電気的導通（グランド効果）の向上を図っている。 FIG. 2 is an exploded view showing the piezoelectric vibrator of the embodiment of the piezoelectric component of the present invention in an exploded manner into a cover portion, a piezoelectric element portion, and a base portion, and FIG. 2 shows an example in which the metal film is not formed by vapor deposition or sputtering, and FIG. 2B shows an example in which the metal film is formed by vapor deposition or sputtering in the cavity of the base portion. In both embodiments, through holes 9 are formed in these members, the through holes 9 are filled with Au or the like to form through electrodes, and electrical conduction (ground effect) between the cover portion, the piezoelectric element portion, and the base portion. We are trying to improve.
そして、前述した圧電発振器の実施例と同様に、図２（ａ）及び図２（ｂ）の８に示す個所に、外来ノイズをシールドするＡｕを主材料とした金属膜２ａ（図１参照）を蒸着またはスパッタリングにより形成する。 Similar to the above-described embodiment of the piezoelectric oscillator, a metal film 2a (see FIG. 1) mainly made of Au, which shields external noise, is shown at 8 in FIGS. 2 (a) and 2 (b). Is formed by vapor deposition or sputtering.
とくに、本発明の圧電部品では、カバー部及びベース部を圧電素子と直接分子間結合により接合するため、水晶からなる圧電素子と同じ物質である水晶、またはガラス系材料で、圧電部品のカバー部またはベース部を形成するので、圧電部品は、透明または半透明なものとなる。 In particular, in the piezoelectric component of the present invention, since the cover and the base are joined to the piezoelectric element by direct intermolecular bonding, the cover of the piezoelectric component is made of crystal or glass-based material which is the same material as the piezoelectric element made of crystal. Alternatively, since the base portion is formed, the piezoelectric component is transparent or translucent.
例えば、このような構造をもつ圧電部品において、半導体素子（ＩＣチップ）を組み込んで、圧電素子を励振する電子回路を構成したものでは、半導体素子に一様な光が照射され続け、半導体素子のもつ光電効果により電気的特性が変化する。そこで、例えば、カバー部全面に、本願発明の圧電部品のように、金属膜を蒸着またはスパッタリングにより形成することで、半導体素子への光を遮蔽し、半導体素子の光電効果を維持することができる。 For example, in a piezoelectric component having such a structure, in which a semiconductor element (IC chip) is incorporated and an electronic circuit that excites the piezoelectric element is configured, the semiconductor element continues to be irradiated with uniform light. The electrical characteristics change due to the photoelectric effect. Therefore, for example, by forming a metal film on the entire surface of the cover portion by vapor deposition or sputtering like the piezoelectric component of the present invention, light to the semiconductor element can be shielded and the photoelectric effect of the semiconductor element can be maintained. .
また、本発明の圧電部品に、半導体素子を組み込むことにより、外来ノイズ、ＥＭＩノイズの防止について顕著な効果を有するようになる。 Further, by incorporating a semiconductor element into the piezoelectric component of the present invention, a remarkable effect can be obtained in preventing external noise and EMI noise.
さらに、従来の圧電部品では、外来ノイズ、ＥＭＩノイズの防止に、金属製のカバー（リッド）を用いていたが、本発明のように、水晶、ガラス系材料からなるカバー部に金属膜を蒸着またはスパッタリングにより形成することにより、同等のシールド効果が得られるようになる。 In addition, conventional piezoelectric parts used a metal cover (lid) to prevent external noise and EMI noise, but as in the present invention, a metal film is deposited on the cover made of crystal or glass-based material. Alternatively, by forming by sputtering, an equivalent shielding effect can be obtained.
また、本発明の圧電部品では、水晶あるいはガラス系材料からなるカバー部またはベース部に、外部からのノイズのシールド効果が得られるように、それらの表面に金属膜を蒸着またはスパッタリングにより形成するので、周囲の環境（寄生容量等）による圧電部品の特性への悪影響が大巾に低減される。 Further, in the piezoelectric component of the present invention, a metal film is formed on the surface of the cover or base made of quartz or glass material by vapor deposition or sputtering so that an external noise shielding effect can be obtained. The adverse effects on the characteristics of the piezoelectric component due to the surrounding environment (parasitic capacitance, etc.) are greatly reduced.
本発明の圧電部品は、外来ノイズの防止及び小型化・低背化が要求される圧電発振器、圧電振動子、フィルター等に広範に利用できる。 The piezoelectric component of the present invention can be widely used for piezoelectric oscillators, piezoelectric vibrators, filters, and the like that are required to prevent external noise and to be reduced in size and height.
１ 圧電部品（圧電振動子）
２ ベース部
２ａ 金属膜
３ 圧電素子部
４ カバー部
４ａ 金属膜
５ キャビティ（カバー部）
６ 圧電素子
７ キャビティ（ベース部）
８ 端子電極
1 Piezoelectric parts (piezoelectric vibrator)
2 Base part 2a Metal film 3 Piezoelectric element part 4 Cover part 4a Metal film 5 Cavity (cover part)
6 Piezoelectric element 7 Cavity (base part)
8 terminal electrode
Claims (8)
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| JP2012084669A (en) * | 2010-10-08 | 2012-04-26 | Murata Mfg Co Ltd | Electronic component device and method for manufacturing the same |
| WO2018097132A1 (en) * | 2016-11-24 | 2018-05-31 | 株式会社大真空 | Piezoelectric vibration device and sip module including same |
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| JP2002252549A (en) * | 2001-02-26 | 2002-09-06 | Daishinku Corp | Multimode piezoelectric filter |
| JP2003008388A (en) * | 2001-06-25 | 2003-01-10 | Nippon Dempa Kogyo Co Ltd | Surface mounted crystal oscillator |
| JP2005033450A (en) * | 2003-07-11 | 2005-02-03 | Murata Mfg Co Ltd | Electronic component and its manufacturing method |
| JP2008182665A (en) * | 2006-12-26 | 2008-08-07 | Nippon Dempa Kogyo Co Ltd | Stacked crystal vibrator |
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| JP2012084669A (en) * | 2010-10-08 | 2012-04-26 | Murata Mfg Co Ltd | Electronic component device and method for manufacturing the same |
| WO2018097132A1 (en) * | 2016-11-24 | 2018-05-31 | 株式会社大真空 | Piezoelectric vibration device and sip module including same |
| CN109716646A (en) * | 2016-11-24 | 2019-05-03 | 株式会社大真空 | Piezodectric vibration device and the SIP module for having it |
| TWI668960B (en) * | 2016-11-24 | 2019-08-11 | 日商大真空股份有限公司 | Piezo vibrating element and system integration package (SIP) module having the same |
| JPWO2018097132A1 (en) * | 2016-11-24 | 2019-10-17 | 株式会社大真空 | Piezoelectric vibration device and SiP module including the same |
| US11637544B2 (en) | 2016-11-24 | 2023-04-25 | Daishinku Corporation | Piezoelectric resonator device and system-in-package module including the same |
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