JP2020150128A - センサ及び距離計測装置 - Google Patents
センサ及び距離計測装置 Download PDFInfo
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- JP2020150128A JP2020150128A JP2019046282A JP2019046282A JP2020150128A JP 2020150128 A JP2020150128 A JP 2020150128A JP 2019046282 A JP2019046282 A JP 2019046282A JP 2019046282 A JP2019046282 A JP 2019046282A JP 2020150128 A JP2020150128 A JP 2020150128A
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- 238000005259 measurement Methods 0.000 title claims abstract description 19
- 238000010791 quenching Methods 0.000 claims abstract description 38
- 230000000171 quenching effect Effects 0.000 claims abstract description 16
- 230000015556 catabolic process Effects 0.000 claims description 16
- 239000004065 semiconductor Substances 0.000 description 46
- 230000003287 optical effect Effects 0.000 description 25
- 239000012535 impurity Substances 0.000 description 21
- 238000010586 diagram Methods 0.000 description 19
- 239000000969 carrier Substances 0.000 description 13
- 239000000758 substrate Substances 0.000 description 7
- 238000012986 modification Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000001514 detection method Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 101150098161 APD1 gene Proteins 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/481—Constructional features, e.g. arrangements of optical elements
- G01S7/4816—Constructional features, e.g. arrangements of optical elements of receivers alone
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/483—Details of pulse systems
- G01S7/486—Receivers
- G01S7/4861—Circuits for detection, sampling, integration or read-out
- G01S7/4863—Detector arrays, e.g. charge-transfer gates
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
- G01S17/06—Systems determining position data of a target
- G01S17/08—Systems determining position data of a target for measuring distance only
- G01S17/10—Systems determining position data of a target for measuring distance only using transmission of interrupted, pulse-modulated waves
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/483—Details of pulse systems
- G01S7/486—Receivers
- G01S7/4861—Circuits for detection, sampling, integration or read-out
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1446—Devices controlled by radiation in a repetitive configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02016—Circuit arrangements of general character for the devices
- H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02027—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier for devices working in avalanche mode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
- H01L31/02164—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Networks & Wireless Communication (AREA)
- Radar, Positioning & Navigation (AREA)
- Remote Sensing (AREA)
- Light Receiving Elements (AREA)
- Optical Radar Systems And Details Thereof (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
[第1の実施形態]
図1は、各実施形態に係る距離計測装置の概略的な全体構成を示す図である。距離計測装置1は、出射部10と、光学系20と、計測処理部30と、画像処理部40とを有している。
次に第2の実施形態を説明する。ここで、第2の実施形態においても距離計測装置の構成は、第1の実施形態と同様である。したがって、その説明は省略する。図5は、第2の実施形態におけるセンサ33の1つの構成例を示す図である。図5に示すように、実施形態におけるセンサ33は、センサ領域331と、ダミーSPAD332とを有する。センサ領域331とダミーSPAD332は、第1の実施形態と同様である。
ここで、ダミーSPAD332自体が励起しにくいように構成されていてもよい。例えば、ダミーSPAD332は、アバランシェ降伏を起こし難くなるように構成されていてもよい。または、ダミーSPAD332は、早期にクエンチが完了するように構成されていてもよい。これらの変形例1は、第1の実施形態及び第2の実施形態の何れにおいても適用され得る。
前述した実施形態ではセンサ領域331とダミーSPAD332とは隣り合っているとしている。これに対し、図8で示すように、センサ領域331とダミーSPAD332との間にはある程度の間隔Iが空けられていてもよい。間隔Iの幅は、1画素の幅、例えば2μmから10μm程度でよい。実際には、間隔Iの幅は、センサ領域331及びダミーSPAD332に入射し得る光の波長に応じて決められてよい。ここで、間隔Iには、何の素子も形成されていなくてもよいし、トレンチ構造やLOCOSの様な素子分離用の構造が作成されていてもよく、逆バイアス電圧がかけられていないダミーSPADが形成されていてもよい。
Claims (8)
- 第1のアバランシェフォトダイオードと、
一端が対応する前記第1のアバランシェフォトダイオードの電流出力端子に接続され、もう一端が出力端子に接続された第1のクエンチング素子と、
前記第1のアバランシェフォトダイオードと隣り合うように配置された第2のアバランシェフォトダイオードと、
一端が対応する前記第2のアバランシェフォトダイオードの電流出力端子に接続され、もう一端が特定の電位に接続された第2のクエンチング素子と、
を具備するセンサ。 - 前記第1のアバランシェフォトダイオードは、2次元に配置されてセンサ領域を形成し、
前記第2のアバランシェフォトダイオードは、前記センサ領域の外周に配置されている請求項1に記載のセンサ。 - 前記第2のアバランシェフォトダイオードは、前記センサ領域の外周の一部には、配置されていない請求項2に記載のセンサ。
- 前記第2のアバランシェフォトダイオードは、遮光されている請求項1乃至3の何れか1項に記載のセンサ。
- 前記第2のアバランシェフォトダイオードのブレークダウン電圧は、前記第1のアバランシェフォトダイオードのブレークダウン電圧よりも高い請求項1乃至4の何れか1項に記載のセンサ。
- 前記第2のクエンチング素子の抵抗値は、前記第1のクエンチング素子の抵抗値よりも高い請求項1乃至4の何れか1項に記載のセンサ。
- 前記第2のアバランシェフォトダイオードの逆バイアス電圧は、前記第1のアバランシェフォトダイオードの逆バイアス電圧よりも低い請求項1乃至4の何れか1項に記載のセンサ。
- 対象物に向けて光を出射するように構成された出射部と、
前記対象物からの反射光を受光する、請求項1乃至7の何れか1項に記載のセンサと、
前記出力端子から出力される前記第1のアバランシェフォトダイオードの電流信号に基づく計測信号から、前記対象物までの距離を計測する距離計測処理部と、
を具備する距離計測装置。
Priority Applications (4)
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JP2019046282A JP7366558B2 (ja) | 2019-03-13 | 2019-03-13 | センサ及び距離計測装置 |
CN201910686114.9A CN111766592A (zh) | 2019-03-13 | 2019-07-29 | 传感器以及距离测量装置 |
US16/551,283 US11275156B2 (en) | 2019-03-13 | 2019-08-26 | Sensor and distance measuring device comprising first and second quenching devices respectively connected to current output terminals of fist and second avalanche photodiodes |
EP19195114.4A EP3709053A1 (en) | 2019-03-13 | 2019-09-03 | Sensor and distance measuring device |
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JP2019046282A JP7366558B2 (ja) | 2019-03-13 | 2019-03-13 | センサ及び距離計測装置 |
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JP2020150128A true JP2020150128A (ja) | 2020-09-17 |
JP7366558B2 JP7366558B2 (ja) | 2023-10-23 |
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US (1) | US11275156B2 (ja) |
EP (1) | EP3709053A1 (ja) |
JP (1) | JP7366558B2 (ja) |
CN (1) | CN111766592A (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPWO2021085484A1 (ja) * | 2019-10-30 | 2021-05-06 | ||
JP2022051244A (ja) * | 2020-09-18 | 2022-03-31 | 株式会社東芝 | 距離計測装置 |
US11333747B2 (en) | 2019-03-14 | 2022-05-17 | Kabushiki Kaisha Toshiba | Light detector and distance measuring device comprising plural seets of light detection elements with plural selection circuits |
Families Citing this family (2)
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---|---|---|---|---|
JP7443006B2 (ja) * | 2019-09-19 | 2024-03-05 | 株式会社東芝 | 光検出器及び距離測定装置 |
JP7383542B2 (ja) * | 2020-03-24 | 2023-11-20 | 株式会社東芝 | 光検出器及び距離計測装置 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014216531A (ja) * | 2013-04-26 | 2014-11-17 | 株式会社東芝 | 光検出装置、放射線検出装置、放射線分析装置及び光検出方法 |
JP2014241543A (ja) * | 2013-06-12 | 2014-12-25 | 株式会社東芝 | 光検出装置およびct装置 |
US20150340390A1 (en) * | 2014-05-20 | 2015-11-26 | Sensl Technologies Ltd. | Semiconductor photomultiplier |
JP2017117834A (ja) * | 2015-12-21 | 2017-06-29 | 浜松ホトニクス株式会社 | 光電変換素子 |
JP2018113397A (ja) * | 2017-01-13 | 2018-07-19 | 株式会社東芝 | 受光装置 |
JP2018157032A (ja) * | 2017-03-16 | 2018-10-04 | 株式会社東芝 | 光検出装置およびこれを用いた被写体検知システム |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4530523B2 (ja) | 2000-11-28 | 2010-08-25 | アンリツ産機システム株式会社 | X線異物検出装置 |
CN101163988B (zh) * | 2005-04-22 | 2012-06-13 | 皇家飞利浦电子股份有限公司 | 用于tof-pet的数字硅光电倍增管 |
US8269181B2 (en) * | 2007-10-10 | 2012-09-18 | Positron Corporation | Avalanche pixel sensors and related methods |
JP2012089738A (ja) | 2010-10-21 | 2012-05-10 | Sharp Corp | 光センサおよび電子機器 |
JP5562207B2 (ja) * | 2010-10-29 | 2014-07-30 | 浜松ホトニクス株式会社 | フォトダイオードアレイ |
JP5444444B2 (ja) | 2012-12-03 | 2014-03-19 | 浜松ホトニクス株式会社 | 固体撮像装置 |
CN104198058B (zh) * | 2014-08-05 | 2017-06-06 | 清华大学 | 单光子雪崩二极管的淬灭和读出电路 |
EP3081963B1 (en) | 2015-04-15 | 2020-11-11 | ams AG | Avalanche diode arrangement and method for providing a detection signal |
US9997551B2 (en) * | 2015-12-20 | 2018-06-12 | Apple Inc. | Spad array with pixel-level bias control |
CN109564953B (zh) * | 2016-07-27 | 2022-06-14 | 浜松光子学株式会社 | 光检测装置 |
EP3516692B1 (en) * | 2016-09-23 | 2022-02-16 | Apple Inc. | Stacked backside illuminated spad array |
EP3339886B1 (de) * | 2016-12-22 | 2019-02-13 | Sick AG | Lichtempfänger mit einer vielzahl von lawinenphotodiodenelementen und verfahren zur versorgung mit einer vorspannung |
US10580909B2 (en) * | 2017-08-29 | 2020-03-03 | Sensl Technologies Ltd. | Semiconductor photomultiplier with improved operating voltage range |
CN108594249B (zh) * | 2018-04-25 | 2020-07-28 | 京东方科技集团股份有限公司 | 显示面板及利用显示面板对外部对象进行测距的方法 |
-
2019
- 2019-03-13 JP JP2019046282A patent/JP7366558B2/ja active Active
- 2019-07-29 CN CN201910686114.9A patent/CN111766592A/zh active Pending
- 2019-08-26 US US16/551,283 patent/US11275156B2/en active Active
- 2019-09-03 EP EP19195114.4A patent/EP3709053A1/en active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014216531A (ja) * | 2013-04-26 | 2014-11-17 | 株式会社東芝 | 光検出装置、放射線検出装置、放射線分析装置及び光検出方法 |
JP2014241543A (ja) * | 2013-06-12 | 2014-12-25 | 株式会社東芝 | 光検出装置およびct装置 |
US20150340390A1 (en) * | 2014-05-20 | 2015-11-26 | Sensl Technologies Ltd. | Semiconductor photomultiplier |
JP2017117834A (ja) * | 2015-12-21 | 2017-06-29 | 浜松ホトニクス株式会社 | 光電変換素子 |
JP2018113397A (ja) * | 2017-01-13 | 2018-07-19 | 株式会社東芝 | 受光装置 |
JP2018157032A (ja) * | 2017-03-16 | 2018-10-04 | 株式会社東芝 | 光検出装置およびこれを用いた被写体検知システム |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11333747B2 (en) | 2019-03-14 | 2022-05-17 | Kabushiki Kaisha Toshiba | Light detector and distance measuring device comprising plural seets of light detection elements with plural selection circuits |
US11774562B2 (en) | 2019-03-14 | 2023-10-03 | Kabushiki Kaisha Toshiba | Light detector and distance measuring device comprising plural sets of light detection elements with plural selection circuits |
JPWO2021085484A1 (ja) * | 2019-10-30 | 2021-05-06 | ||
WO2021085484A1 (ja) * | 2019-10-30 | 2021-05-06 | パナソニックIpマネジメント株式会社 | 光検出器 |
JP7325067B2 (ja) | 2019-10-30 | 2023-08-14 | パナソニックIpマネジメント株式会社 | 光検出器 |
JP2022051244A (ja) * | 2020-09-18 | 2022-03-31 | 株式会社東芝 | 距離計測装置 |
JP7434128B2 (ja) | 2020-09-18 | 2024-02-20 | 株式会社東芝 | 距離計測装置 |
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EP3709053A1 (en) | 2020-09-16 |
JP7366558B2 (ja) | 2023-10-23 |
US20200292670A1 (en) | 2020-09-17 |
US11275156B2 (en) | 2022-03-15 |
CN111766592A (zh) | 2020-10-13 |
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