JP7191868B2 - 単一光子アバランシェダイオードおよび単一光子アバランシェダイオードの動作方法 - Google Patents
単一光子アバランシェダイオードおよび単一光子アバランシェダイオードの動作方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title description 63
- 230000032258 transport Effects 0.000 claims description 193
- 239000004065 semiconductor Substances 0.000 claims description 80
- 239000000758 substrate Substances 0.000 claims description 69
- 239000000969 carrier Substances 0.000 claims description 29
- 230000015556 catabolic process Effects 0.000 description 47
- 238000001514 detection method Methods 0.000 description 29
- 230000005684 electric field Effects 0.000 description 19
- 238000010791 quenching Methods 0.000 description 19
- 230000000171 quenching effect Effects 0.000 description 17
- 230000002441 reversible effect Effects 0.000 description 17
- 230000008569 process Effects 0.000 description 15
- 230000001960 triggered effect Effects 0.000 description 15
- 230000002829 reductive effect Effects 0.000 description 9
- 238000012545 processing Methods 0.000 description 8
- 238000004590 computer program Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 230000000670 limiting effect Effects 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 230000004044 response Effects 0.000 description 4
- 230000002123 temporal effect Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000008929 regeneration Effects 0.000 description 3
- 238000011069 regeneration method Methods 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000004070 electrodeposition Methods 0.000 description 2
- 230000005670 electromagnetic radiation Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 235000012489 doughnuts Nutrition 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
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- H01L31/02—Details
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Description
バルク領域を有する半導体基板と、
上記半導体基板の上記バルク領域において接合増倍領域を有する少なくとも1つの単一光子アバランシェダイオード(SPAD)と、
上記半導体基板の上記バルク領域から上記SPADの上記増倍接合領域へ光生成キャリアを伝送する電気輸送フィールドを生成するように構成された動作回路部とを含む
SPAD検出器が提供される。
SPAD検出器を動作させる方法であって、
上記SPAD検出器は
バルク領域を有する半導体基板と、
上記半導体基板の上記バルク領域において接合増倍領域を有する少なくとも1つのSPADとを含み、
上記方法は
上記半導体基板の上記バルク領域から上記SPADの上記増倍接合領域へ光生成キャリアを伝送する電気輸送フィールドを生成することを含む
方法が提供される。
タイムオブフライト深度検出システムであって、
光源と
第1の態様に係る単一光子アバランシェダイオード(SPAD)検出器を有する
タイムオブフライト深度検出システムが提供される。
・リークキャリアが生成される領域が小さいため、暗計数率が低くなる。
・SPADエリアが小さいため、アフターパルシングが小さくなる。
・超小型pn接合(例えば1fFオーダー)のみを有するため、検出器のキャパシタンスが小さくなる。
・検出器の面積を大きくすることができる(電気輸送フィールドを印加することによって電流を誘導するため)。
・光生成電子を迅速に増倍領域に誘導することができるので、検出率が高くなる。
・NIR効率が良い。(半導体の深部にある電子がアバランシェ位置に誘導される。上記のように、ここでは、光電子を高速かつ効率的にアバランシェ領域に誘導するのと同じ目的を有する、底部からの電気輸送フィールドの印加が可能である。)
・リークキャリアが生成される領域が小さいため、低暗電流となる。
・超小型pn接合(1fFオーダー)のみを有するため、検出器のキャパシタンスが小さくなる。
・検出器の面積を大きくすることが出来る(本明細書に記載のように、電気輸送フィールドを印加することによって電流を誘導するため)。
・光生成電子を迅速に増倍領域に誘導することによって、ほとんどの光生成電子を増倍することができる。
・NIR効率が良い。
(1)
バルク領域を有する半導体基板と、
上記半導体基板の上記バルク領域において接合増倍領域を有する少なくとも1つの単一光子アバランシェダイオード(SPAD)と、
上記半導体基板の上記バルク領域から上記SPADの上記増倍接合領域へ光生成キャリアを伝送する電気輸送フィールドを生成するように構成された動作回路部とを含む
SPAD検出器。
(2)
(1)に記載のSPAD検出器であって、
上記電気輸送フィールドは、平面内電界と垂直平面電界のうちの少なくとも1つである
SPAD検出器。
(3)
(1)または(2)に記載のSPAD検出器であって、
上記SPADは
上記SPADを接地接続する読み出し領域と、
上記電気輸送フィールドを印加する平面内輸送フィールド印加領域とをさらに含む
SPAD検出器。
(4)
(1)乃至(3)のいずれか1項に記載のSPAD検出器であって、
上記SPADはガード領域をさらに含む
SPAD検出器。
(5)
(1)乃至(4)のいずれか1項に記載のSPAD検出器であって、
上記接合増倍領域、上記読み出し領域、上記平面内輸送フィールド印加領域のうちの1つは円柱状領域である
SPAD検出器。
(6)
(1)乃至(5)のいずれか1項に記載のSPAD検出器であって、
上記読み出し領域、上記平面内輸送フィールド印加領域、上記接合増倍領域のうちの少なくとも1つは中空円筒状領域である
SPAD検出器。
(7)
(1)乃至(6)のいずれか1項に記載のSPAD検出器であって、
上記半導体基板は垂直平面輸送フィールド印加領域をさらに含む
SPAD検出器。
(8)
(1)乃至(7)のいずれか1項に記載のSPAD検出器であって、
上記動作回路部は光生成キャリアによってトリガされるアバランシェを発生させる電気読み出し領域を生成するように構成される
SPAD検出器。
(9)
(1)乃至(8)のいずれか1項に記載のSPAD検出器であって、
上記電気輸送フィールドは一定である
SPAD検出器。
(10)
(1)乃至(9)のいずれか1項に記載のSPAD検出器であって、
上記SPAD検出器はさらなるSPADを含み、
上記動作回路部は上記SPADと上記さらなるSPADを交互に動作させるように構成される
SPAD検出器。
(11)
(1)乃至(10)のいずれか1項に記載のSPAD検出器であって、
上記SPAD検出器はフォトニックミキサである
SPAD検出器。
(12)
(1)乃至(11)のいずれか1項に記載のSPAD検出器であって、
上記接合増倍領域はタップ領域に隣接し、上記タップ領域は上記SPADのカソードまたはアノードを形成する
SPAD検出器。
(13)
(12)に記載のSPAD検出器であって、
上記タップ領域はn型ドープ領域またはp型ドープ領域である
SPAD検出器。
(14)
(12)または(13)に記載のSPAD検出器であって、
上記タップ領域はn型ウェルまたはp型ウェルを含む
SPAD検出器。
(15)
(14)に記載のSPAD検出器であって、
上記n型ウェルまたはp型ウェルはレトログレードドーピングを有する
SPAD検出器。
(16)
(15)に記載のSPAD検出器であって、
上記n型ウェルまたはp型ウェルは低ドープエリアと高ドープエリアを有する
SPAD検出器。
(17)
(16)に記載のSPAD検出器であって、
上記低ドープエリアは上記高ドープエリアよりも上記バルク領域の表面に近い
SPAD検出器。
(18)
(17)に記載のSPAD検出器であって、
上記高ドープエリアは上記バルク領域に埋め込まれている
SPAD検出器。
(19)
(17)に記載のSPAD検出器であって、
上記高ドープエリアはイオン注入により形成される
SPAD検出器。
(20)
(12)乃至(19)のいずれか1項に記載のSPAD検出器であって、
上記SPAD検出器は上記電気輸送フィールドを印加する輸送印加領域をさらに含み、
上記輸送フィールド印加領域は上記SPAD検出器のアノードまたはカソードとしても機能する
SPAD検出器。
(21)
(20)に記載のSPAD検出器であって、
上記輸送印加領域と上記増倍接合領域は互いに近接している
SPAD検出器。
(22)
(21)に記載のSPAD検出器であって、
上記輸送印加領域は少なくとも部分的に上記増倍接合領域と重複する
SPAD検出器。
(23)
SPAD検出器を動作させる方法であって、
上記SPAD検出器は
バルク領域を有する半導体基板と、
上記半導体基板の上記バルク領域において接合増倍領域を有する少なくとも1つのSPADとを含み、
上記方法は
上記半導体基板の上記バルク領域から上記SPADの上記増倍接合領域へ光生成キャリアを伝送する電気輸送フィールドを生成することを含む
方法。
(24)
(23)に記載の方法であって、
上記電気輸送フィールドは、平面内電界と垂直平面電界のうちの少なくとも1つである
方法。
(25)
(23)または(24)に記載の方法であって、
上記SPADは
上記SPADを接地接続する読み出し領域と、
上記電気輸送フィールドを印加する平面内輸送フィールド印加領域とをさらに含む
方法。
(26)
(23)乃至(25)のいずれか1項に記載の方法であって、
上記SPADはガード領域をさらに含む
方法。
(27)
(23)乃至(26)のいずれか1項に記載の方法であって、
上記接合増倍領域、上記読み出し領域、上記平面内輸送フィールド印加領域のうちの1つは円柱状領域である
方法。
(28)
(23)乃至(27)のいずれか1項に記載の方法であって、
上記読み出し領域、上記平面内輸送フィールド印加領域、上記接合増倍領域のうちの少なくとも1つは中空円筒状領域である
方法。
(29)
(23)乃至(28)のいずれか1項に記載の方法であって、
上記半導体基板は垂直平面輸送フィールド印加領域をさらに含む
方法。
(30)
(23)乃至(29)のいずれか1項に記載の方法であって、
光生成キャリアによってトリガされるアバランシェを発生させる電気読み出し領域を生成することをさらに含む
方法。
(31)
(30)に記載の方法であって、
上記電気輸送フィールドは一定である
方法。
(32)
(23)乃至(31)のいずれか1項に記載の方法であって、
上記SPAD検出器はさらなるSPADを含み、
上記方法は上記SPADと上記さらなるSPADを交互に動作させることを含む
方法。
(33)
(23)乃至(32)のいずれか1項に記載の方法であって、
上記SPAD検出器はフォトニックミキサである
方法。
(34)
コンピュータプログラムであって、
コンピュータ上で実行される際に、コンピュータに(23)乃至(33)のいずれか1項に記載の方法を実行させるプログラムコードを含む
コンピュータプログラム。
(35)
非一過性のコンピュータ読み取り可能記録媒体であって、
プロセッサによって実行される際に、(23)乃至(33)のいずれか1項に記載の方法を実行させるコンピュータプログラム製品を格納した
非一過性のコンピュータ読み取り可能記録媒体。
(36)
タイムオブフライト深度検出システムであって、
光源と
(1)乃至(22)のいずれか1項に記載の単一光子アバランシェダイオード(SPAD)検出器を有する
タイムオブフライト深度検出システム。
Claims (1)
- バルク領域を有する半導体基板と、
前記半導体基板の前記バルク領域において接合増倍領域を有する少なくとも1つの単一光子アバランシェダイオード(SPAD)と、
前記半導体基板の前記バルク領域から前記SPADの前記接合増倍領域へ光生成キャリアを伝送する電気輸送フィールドを生成するように構成された動作回路部と、前記接合増倍領域に隣接するタップ領域とを含み、
前記タップ領域はn型ウェルまたはp型ウェルを含み、前記n型ウェルまたはp型ウェルは低ドープエリアと高ドープエリアを有し、前記低ドープエリアは前記高ドープエリアよりも前記バルク領域の表面に近く、
前記SPADは
前記SPADを接地接続する読み出し領域と、
前記電気輸送フィールドを印加する平面内輸送フィールド印加領域と
を含む、
SPAD検出器。
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PCT/EP2018/067044 WO2019002252A1 (en) | 2017-06-26 | 2018-06-26 | MONOPHOTONIC AVALANCED DIODE AND METHOD FOR OPERATING A MONOPHOTONIC AVALANCED DIODE |
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US11527670B2 (en) | 2020-02-13 | 2022-12-13 | Infineon Technologies Dresden GmbH & Co. KG | Photon avalanche diode and methods of producing thereof |
US11735677B2 (en) | 2020-07-20 | 2023-08-22 | ActLight SA | Photodetectors and photodetector arrays |
CN112701172B (zh) * | 2020-11-27 | 2024-03-15 | 宁波飞芯电子科技有限公司 | 一种雪崩光电二极管 |
CN113078227B (zh) * | 2021-03-29 | 2023-10-13 | 宁波飞芯电子科技有限公司 | 一种雪崩光电二极管探测装置 |
KR102653478B1 (ko) * | 2022-10-06 | 2024-04-01 | 주식회사 트루픽셀 | 단일 광자 검출 소자, 전자 장치, 및 라이다 장치 |
KR20240028106A (ko) * | 2022-08-24 | 2024-03-05 | 주식회사 트루픽셀 | 단일 광자 검출 소자, 전자 장치, 및 라이다 장치 |
US20230065873A1 (en) * | 2021-08-31 | 2023-03-02 | Korea Institute Of Science And Technology | Single-photon detection device, single-photon detector, and single-photon detector array |
KR102711235B1 (ko) * | 2022-06-24 | 2024-09-27 | 주식회사 트루픽셀 | 단일 광자 검출 소자, 전자 장치, 및 라이다 장치 |
KR102668639B1 (ko) * | 2022-10-07 | 2024-05-23 | 주식회사 트루픽셀 | 아발란치 광검출 소자, 전자 장치, 및 라이다 장치 |
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KR20200110717A (ko) | 2020-09-25 |
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CN111684610A (zh) | 2020-09-18 |
KR20220069125A (ko) | 2022-05-26 |
US20200144436A1 (en) | 2020-05-07 |
CN111684610B (zh) | 2023-07-21 |
EP3646390B1 (en) | 2023-07-26 |
JP2020526028A (ja) | 2020-08-27 |
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