JP2020120001A - 磁気メモリ素子 - Google Patents
磁気メモリ素子 Download PDFInfo
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- JP2020120001A JP2020120001A JP2019010092A JP2019010092A JP2020120001A JP 2020120001 A JP2020120001 A JP 2020120001A JP 2019010092 A JP2019010092 A JP 2019010092A JP 2019010092 A JP2019010092 A JP 2019010092A JP 2020120001 A JP2020120001 A JP 2020120001A
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- 230000005291 magnetic effect Effects 0.000 title claims abstract description 376
- 229910052723 transition metal Inorganic materials 0.000 claims abstract description 42
- 150000003624 transition metals Chemical class 0.000 claims abstract description 42
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 229910052771 Terbium Inorganic materials 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 230000005684 electric field Effects 0.000 description 22
- 230000005381 magnetic domain Effects 0.000 description 22
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 19
- 230000000694 effects Effects 0.000 description 14
- 238000000034 method Methods 0.000 description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 11
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 10
- 239000000758 substrate Substances 0.000 description 10
- 230000005415 magnetization Effects 0.000 description 9
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 229910003321 CoFe Inorganic materials 0.000 description 5
- 239000000395 magnesium oxide Substances 0.000 description 5
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 5
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 5
- 229910002441 CoNi Inorganic materials 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000001459 lithography Methods 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000005290 antiferromagnetic effect Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 239000000523 sample Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 2
- 230000005374 Kerr effect Effects 0.000 description 2
- 229910000914 Mn alloy Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 239000002070 nanowire Substances 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 230000005355 Hall effect Effects 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 229910019041 PtMn Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000002772 conduction electron Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- SHMWNGFNWYELHA-UHFFFAOYSA-N iridium manganese Chemical compound [Mn].[Ir] SHMWNGFNWYELHA-UHFFFAOYSA-N 0.000 description 1
- 239000006101 laboratory sample Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- IGOJMROYPFZEOR-UHFFFAOYSA-N manganese platinum Chemical compound [Mn].[Pt] IGOJMROYPFZEOR-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910000889 permalloy Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Landscapes
- Mram Or Spin Memory Techniques (AREA)
- Thin Magnetic Films (AREA)
- Hall/Mr Elements (AREA)
Abstract
Description
図1は、本発明の第1の実施形態に係る磁気メモリ素子1の構成を磁性細線側からみた斜視図である。磁気メモリ素子1は、基板2と、基板2の一面上に順次形成された第3電極33および第1絶縁層41と、第1電極31、第2電極32および第2絶縁層42と、磁性細線5と、磁界センサ6とを備えている。
次に、本発明の第2の実施形態に係る磁気メモリ素子1として、磁性細線5の内部に磁気スキルミオンを有する場合についてメモリの動作を説明する。磁気スキルミオンは、電子スピンが渦状に並んだナノスケールの磁気構造体である。
さらに、本発明の第3の実施形態に係る磁気メモリ素子1について、磁性細線内部に磁気スキルミオンを有する場合を例に説明する。
2・・・・基板
31・・・第1電極
32・・・第2電極
33・・・第3電極
41・・・第1絶縁層
42・・・第2絶縁層
5・・・・磁性細線
6・・・・磁界センサ
61・・・第1磁界センサ
62・・・第2磁界センサ
71・・・磁区
72・・・磁区
73・・・磁壁
81・・・磁区
82・・・磁気スキルミオン
9・・・・レーザ光
100・・電流駆動回路
101・・電圧印加回路
Claims (5)
- 一方向に延在するように設けられ磁性細線と、
前記磁性細線に接し前記磁性細線の延在する方向に沿って離間して設けられた第1電極および第2電極と、
前記第1電極および第2電極との間の前記磁性細線の一面に対向して設けられた第3電極と、
前記磁性細線と前記第3電極との間に設けられ前記磁性細線に接しかつ前記第3電極に接する絶縁層と、
前記磁性細線に近接して配置された少なくとも1つの磁界センサとを備え、
前記磁性細線が、磁性層と遷移金属層が交互に積層された積層構造を有する
ことを特徴とする磁気メモリ素子。 - 前記遷移金属層の一層が前記絶縁層に接している
ことを特徴とする請求項1に記載の磁気メモリ素子。 - 前記絶縁層に接する前記遷移金属層の膜厚が0.2〜2nmである
ことを特徴とする請求項1または2のいずれか1項に記載の磁気メモリ素子。 - 前記磁性層はCo、FeおよびNiから選ばれる1種以上の元素を含んだものであり、前記遷移金属層は、Pt、Pd、Ta、WおよびTbから選ばれる1種以上の元素である
ことを特徴とする請求項1〜3のいずれか1項に記載の磁気メモリ素子。 - 前記磁界センサが、前記磁性細線を挟んで、前記磁性細線の延在する方向の前記第3電極の端部に対向する位置に配置されている
ことを特徴とする請求項1〜4のいずれか1項に記載の磁気メモリ素子。
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JP2020120001A true JP2020120001A (ja) | 2020-08-06 |
JP7300666B2 JP7300666B2 (ja) | 2023-06-30 |
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013197174A (ja) * | 2012-03-16 | 2013-09-30 | Toshiba Corp | 磁気メモリ |
JP2014086640A (ja) * | 2012-10-25 | 2014-05-12 | Toshiba Corp | 磁性細線を有する磁気メモリおよびその書き込み方法 |
US20140268981A1 (en) * | 2013-03-15 | 2014-09-18 | International Business Machines Corporation | Racetrack memory with electric-field assisted domain wall injection for low-power write operation |
JP2015029024A (ja) * | 2013-07-30 | 2015-02-12 | 株式会社東芝 | 磁気記憶素子、磁気記憶装置、磁気メモリ、および磁気記憶素子の駆動方法 |
JP2016139673A (ja) * | 2015-01-26 | 2016-08-04 | 国立研究開発法人理化学研究所 | 磁気素子、スキルミオンメモリ、スキルミオンメモリデバイス、データ処理装置、スキルミオンメモリ搭載固体電子デバイス、データ記録装置、データ処理装置及びデータ通信装置 |
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2019
- 2019-01-24 JP JP2019010092A patent/JP7300666B2/ja active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013197174A (ja) * | 2012-03-16 | 2013-09-30 | Toshiba Corp | 磁気メモリ |
JP2014086640A (ja) * | 2012-10-25 | 2014-05-12 | Toshiba Corp | 磁性細線を有する磁気メモリおよびその書き込み方法 |
US20140268981A1 (en) * | 2013-03-15 | 2014-09-18 | International Business Machines Corporation | Racetrack memory with electric-field assisted domain wall injection for low-power write operation |
JP2015029024A (ja) * | 2013-07-30 | 2015-02-12 | 株式会社東芝 | 磁気記憶素子、磁気記憶装置、磁気メモリ、および磁気記憶素子の駆動方法 |
JP2016139673A (ja) * | 2015-01-26 | 2016-08-04 | 国立研究開発法人理化学研究所 | 磁気素子、スキルミオンメモリ、スキルミオンメモリデバイス、データ処理装置、スキルミオンメモリ搭載固体電子デバイス、データ記録装置、データ処理装置及びデータ通信装置 |
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