JP2020114941A - 固体前駆体の低温焼結 - Google Patents
固体前駆体の低温焼結 Download PDFInfo
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Abstract
Description
Claims (51)
- 気相成長プロセスのための前駆体蒸気を発生させる揮発に有用な、圧縮粒子前駆体の固形体を含む固体送達前駆体。
- 圧縮粒子前駆体の前記固形体が、ペレット、プレートレット、タブレット、ビーズ、ディスク又はモノリスの形態である、請求項1に記載の固体送達前駆体。
- 圧縮粒子前駆体の前記固形体が、揮発操作において加熱されたとき、対応する揮発操作条件下で前記粒子前駆体によって示される前駆体蒸気流束よりも大幅に高い前駆体蒸気流束を示す、請求項1に記載の固体送達前駆体。
- 圧縮粒子前駆体の前記固形体によって示される前記前駆体蒸気流束が、対応する揮発操作条件下で前記粒子前駆体によって示される前記前駆体蒸気流束よりも少なくとも15%高い、請求項3に記載の固体送達前駆体。
- 圧縮粒子前駆体の前記固形体が、自由流動性粉末のエンベロープ密度として測定された同じ質量の対応する粒子前駆体のかさ密度よりも、20%、25%、30%、35%、40%、45%、50%、55%、60%、65%、70%、75%、80%、85%、90%、95%、100%、110%、120%、130%、140%、150%及び最大2000%又はそれ以上のうちの少なくとも1つだけ高い片密度を有する、請求項1に記載の固体送達前駆体。
- 前記圧縮材料の個々の固形体の前記かさ密度が、前記材料の絶対密度の80%、82%、85%、87%、90%、91%、92%、93%、94%、95%、96%、97%、98%及び99%のうちの少なくとも1つである、請求項1に記載の固体送達前駆体。
- 圧縮粒子前駆体の前記固形体が、その寸法のそれぞれが0.2−2.5cmの範囲内である面を有し、且つ0.2−2.5cmの範囲内の厚さを有するプレートレット又はタブレットの形態である、請求項1に記載の固体送達前駆体。
- 圧縮粒子前駆体の前記固形体が、2−20cmの範囲内の直径及び1−4cmの範囲内の厚さを有する円筒パックの形態である、請求項1に記載の固体送達前駆体。
- 前記圧縮粒子前駆体が、20−30℃の周囲温度条件及び約1atmの周囲圧力で固体である、請求項1に記載の固体送達前駆体。
- 圧縮粒子前駆体の前記固形体が、塩化ハフニウム、塩化ジルコニウム、ペンタキスジメチルアミノタンタル(PDMAT)、トリメチルインジウム、ビスシクロペンタジエンマグネシウム、テトラメチル亜鉛、テトラエチル亜鉛、タングステンヘキサカルボニル、五塩化タングステン、六塩化タングステン、金属β−ジケトネート、金属アミジネート、金属ホルムアミジネート及び金属カルボキシレートからなる群から選択される少なくとも1つの前駆体を含む、請求項1に記載の固体送達前駆体。
- 圧縮粒子前駆体の前記固形体が、バインダ又はマトリックス材料を含む、請求項1に記載の固体送達前駆体。
- 前記バインダ又はマトリックス材料が、不揮発性の非反応性ポリマー材料を含む、請求項11に記載の固体送達前駆体。
- 前記バインダ又はマトリックス材料が、高純度の不揮発性炭素質材料を含む、請求項11に記載の固体送達前駆体。
- 圧縮粒子前駆体の前記固形体が同族化合物を含む、請求項1に記載の固体送達前駆体。
- 圧縮粒子前駆体の前記固形体が、五塩化タングステン及び六塩化タングステンを含む、請求項1に記載の固体送達前駆体。
- 請求項1から15の何れか一項に記載の固体送達前駆体を保持する蒸発器容器を含む蒸発器を含む固体送達装置。
- 前記蒸発器が、圧縮粒子前駆体の前記固形体のための支持構造物を含む、請求項16に記載の固体送達装置。
- 前記支持構造物が、前記蒸発器容器内の少なくとも1つのトレイを含む、請求項17に記載の固体送達装置。
- 前記支持構造物が、前記蒸発器容器内のトレイの配列を含む、請求項17に記載の固体送達装置。
- 前記蒸発器容器内のトレイの前記配列が、異なる高さのトレイを含む、請求項19に記載の固体送達装置。
- 前記トレイのそれぞれが、その内部を通るガス流のための多数の流路部材を含む、請求項19に記載の固体送達装置。
- 前記トレイのそれぞれが、その内部を通るガス流のための多孔質支持面を含む、請求項19に記載の固体送達装置。
- 前記蒸発器が、キャリヤーガスを前記容器の内容積に導入するように構成されたガス入口、及びキャリヤーガスと揮発した前駆体蒸気とのガス混合物を前記容器の前記内容積から排出するように構成されたガス出口を含む、請求項16に記載の固体送達装置。
- 前記ガス入口に連結され、且つ前記ガス入口から前記容器の前記内容積の下部にキャリヤーガスを送達するように構成された流路をさらに含む、請求項23に記載の固体送達装置。
- 前記蒸発器が、圧縮粒子前駆体の前記固形体のための支持構造物を含み、前記支持構造物が、前記流路に連結された多数のトレイを含み、前記トレイが、前記容器の前記内容積内に、互いに対して垂直方向に隔置されている、請求項24に記載の固体送達装置。
- 前記蒸発器が、前駆体蒸気送達関係で前駆体蒸気利用装置に連結された、請求項16から25の何れか一項に記載の固体送達装置。
- 前記前駆体蒸気利用装置が、化学気相成長(CVD)装置、パルスCVD装置、原子層成長(ALD)装置、イオン注入システム、スパッタリング装置又は気相エピタキシー装置を含む、請求項26に記載の固体送達装置。
- 前記前駆体蒸気利用装置がパルス化学気相成長装置を含む、請求項26に記載の固体送達装置。
- 前記前駆体蒸気利用装置が原子層成長装置を含む、請求項26に記載の固体送達装置。
- 前記前駆体蒸気利用装置がイオン注入システムを含む、請求項26に記載の固体送達装置。
- 半導体製品、フラットパネルディスプレイ、太陽電池パネル、LED及び光学コーティングからなる群から選択される製品を製造するように構成された製造設備であって、前記製造設備内の前駆体蒸気利用ツールに前記前駆体蒸気を送達するために構成された請求項16から30の何れか一項に記載の固体送達装置を含む製造設備。
- 半導体製品を製造するように構成された請求項31に記載の製造設備。
- フラットパネルディスプレイを製造するように構成された請求項31に記載の製造設備。
- 太陽電池パネルを製造するように構成された請求項31に記載の製造設備。
- LEDを製造するように構成された請求項31に記載の製造設備。
- 光学コーティングを製造するように構成された請求項31に記載の製造設備。
- 請求項1から15及び請求項48から50の何れか一項に記載の固体送達前駆体を揮発させて、対応する前駆体蒸気を発生させる工程と、気相成長条件下で、前記前駆体蒸気からの材料を基板上に堆積させる工程とを含む気相成長プロセス。
- 半導体製品、フラットパネルディスプレイ、太陽電池パネル、LED及び光学コーティングからなる群から選択される製品の製造方法において実施される、請求項37に記載の気相成長プロセス。
- 粒子前駆体を単一固形体に固結するのに十分な圧力下で前記粒子前駆体を圧縮する工程を含む、請求項1から15の何れか一項に記載の固体送達前駆体の調製方法。
- 前記圧縮する工程が、15℃−30℃の範囲内の温度で実施されて、前記単一固形体内で前記粒子前駆体を固結する、請求項39に記載の方法。
- 前記粒子前駆体が、塩化ハフニウム、塩化ジルコニウム、ペンタキスジメチルアミノタンタル(PDMAT)、トリメチルインジウム、ビスシクロペンタジエンマグネシウム、テトラメチル亜鉛、テトラエチル亜鉛、タングステンヘキサカルボニル、五塩化タングステン、六塩化タングステン、金属β−ジケトネート、金属アミジネート、金属ホルムアミジネート及び金属カルボキシレートからなる群から選択される少なくとも1つの前駆体を含む、請求項39に記載の方法。
- 圧縮粒子前駆体の前記単一固形体が、バインダ又はマトリックス材料を含む、請求項39に記載の方法。
- 前記バインダ又はマトリックス材料が、不揮発性の非反応性ポリマー材料を含む、請求項42に記載の方法。
- 前記バインダ又はマトリックス材料が、高純度の不揮発性炭素質材料を含む、請求項42に記載の方法。
- 圧縮粒子前駆体の前記単一固形体が同族化合物を含む、請求項42に記載の方法。
- 圧縮粒子前駆体の前記単一固形体が、五塩化タングステン及び六塩化タングステンを含む、請求項45に記載の方法。
- 圧縮粒子前駆体の前記固形体を形成するように実施され、且つ圧縮粒子前駆体の前記固形体を蒸発器装置内に実装する工程をさらに含む、請求項39に記載の方法。
- 前記固形体を含む材料に関連する結晶密度の少なくとも50パーセントである密度を有する圧縮粒子前駆体の固形体を含む、気相成長プロセスのための前駆体蒸気を発生させる揮発に有用な固体送達前駆体。
- 圧縮前駆体の前記固形体を含む前記材料が、250℃未満の昇華密度を有する、請求項38に記載の固体送達前駆体。
- 前記圧縮粒子前駆体が、i)五塩化タングステン、ii)五塩化タングステンと六塩化タングステンの組み合わせ、及びiii)タングステンカルボニルのうちの1つである、請求項48に記載の固体送達前駆体。
- 前記圧縮粒子前駆体が、i)五塩化タングステン、ii)五塩化タングステンと六塩化タングステンの組み合わせ、及びiii)タングステンカルボニルのうちの1つである、請求項48に記載の固体送達前駆体。
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