JP2020109793A - 半導体装置、インバータ回路、駆動装置、車両、及び、昇降機 - Google Patents
半導体装置、インバータ回路、駆動装置、車両、及び、昇降機 Download PDFInfo
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- JP2020109793A JP2020109793A JP2019000059A JP2019000059A JP2020109793A JP 2020109793 A JP2020109793 A JP 2020109793A JP 2019000059 A JP2019000059 A JP 2019000059A JP 2019000059 A JP2019000059 A JP 2019000059A JP 2020109793 A JP2020109793 A JP 2020109793A
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- silicon carbide
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- aluminum nitride
- semiconductor device
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 102
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 314
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- 239000012535 impurity Substances 0.000 claims description 86
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 69
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- 229910052757 nitrogen Inorganic materials 0.000 claims description 34
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
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Abstract
Description
第1の実施形態の半導体装置は、第1の面と第1の面に対向する第2の面とを有する炭化珪素層と、ゲート電極と、炭化珪素層とゲート電極との間に位置する結晶質の窒化アルミニウム層と、炭化珪素層と窒化アルミニウム層との間に位置する第1の絶縁層と、窒化アルミニウム層とゲート電極との間に位置し、窒化アルミニウム層よりもバンドギャップの広い第2の絶縁層と、を備える。
第2の実施形態の半導体装置は、第2の炭化珪素領域は第1の部分と、第1の部分と窒化アルミニウム層との間に位置し、第1の部分よりも第2導電型不純物濃度の低い第2の部分を有する点で、第1の実施形態の半導体装置と異なる。以下、第1の実施形態と重複する内容については、一部記述を省略する。
第3の実施形態の半導体装置は、窒化アルミニウム層がスカンジウム(Sc)、イットリウム(Y)、及び、ランタノイド(La、Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu)から成る群から選ばれる少なくとも一つの元素を含む点で、第1の実施形態の半導体装置と異なる。以下、第1の実施形態と重複する内容については、一部記述を省略する。
第4の実施形態の半導体装置は、炭化珪素層と第1の絶縁層との間に位置し、窒素(N)、リン(P)、ヒ素(As)、アンチモン(Sb)、ビスマス(Bi)、スカンジウム(Sc)、イットリウム(Y)、及び、ランタノイド(La、Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu)から成る群から選ばれる少なくとも一つの元素を含む領域を、更に備える点で、第1の実施形態の半導体装置と異なる。以下、第1の実施形態と重複する内容については、一部記述を省略する。
第5の実施形態の半導体装置は、炭化珪素層はトレンチを有し、ゲート電極はトレンチの中に位置する点で、第1の実施形態の半導体装置と異なる。また、第5の実施形態の半導体装置は、窒化アルミニウム層に対向する第2の炭化珪素領域の面が、m面に対し0度以上10度以下傾斜した面、又は、a面に対し0度以上10度以下傾斜した面である点で第1の実施形態の半導体装置と異なる。以下、第1の実施形態と重複する内容については、一部記述を省略する。
第6の実施形態の半導体装置は、第1の面と第1の面に対向する第2の面とを有する炭化珪素層と、炭化珪素層の中に存在する第1導電型の第1の炭化珪素領域と、炭化珪素層の中に存在し、第1の炭化珪素領域と第1の面との間に位置する第2導電型の第2の炭化珪素領域と、炭化珪素層の中に存在し、第2の炭化珪素領域と第1の面との間に位置する第1導電型の第3の炭化珪素領域と、炭化珪素層の中に存在し、第1の炭化珪素領域と第1の面との間に位置する第2導電型の第4の炭化珪素領域と、炭化珪素層の中に存在し、第4の炭化珪素領域と第1の面との間に位置する第1導電型の第5の炭化珪素領域と、炭化珪素層の中に存在し、第1の炭化珪素領域と第1の面との間に位置し、第2の炭化珪素領域と第4の炭化珪素領域に接する第2導電型の第6の炭化珪素領域と、炭化珪素層の中に存在し、第1の炭化珪素領域と第1の面との間に位置する第2導電型の第7の炭化珪素領域と、炭化珪素層の中に存在し、第1の炭化珪素領域と第1の面との間に位置し、第2の炭化珪素領域と第4の炭化珪素領域との間に位置し、第6の炭化珪素領域と第7の炭化珪素領域との間に位置し、第6の炭化珪素領域と第1の面との間に位置し、第7の炭化珪素領域と第1の面との間に位置する第1導電型の第8の炭化珪素領域と、炭化珪素層の第1の面の側に位置する第1の電極と、炭化珪素層の第2の面の側に位置する第2の電極と、炭化珪素層の第1の面の側に位置するゲート電極と、第2の炭化珪素領域及び第4の炭化珪素領域と、ゲート電極との間に位置する結晶質の窒化アルミニウム層と、炭化珪素層と窒化アルミニウム層との間に位置する第1の絶縁層と、窒化アルミニウム層とゲート電極との間に位置し、窒化アルミニウム層よりもバンドギャップの広い第2の絶縁層と、を備える。第6の実施形態の半導体装置は、第6の炭化珪素領域、第7の炭化珪素領域、及び、第8の炭化珪素領域を備える点で、第1の実施形態の半導体装置と異なる。以下、第1の実施形態と重複する内容については、一部記述を省略する。
第7の実施形態のインバータ回路及び駆動装置は、第7の実施形態の半導体装置を備える駆動装置である。
第8の実施形態の車両は、第1の実施形態の半導体装置を備える車両である。
第9の実施形態の車両は、第1の実施形態の半導体装置を備える車両である。
第10の実施形態の昇降機は、第1の実施形態の半導体装置を備える昇降機である。
12 ソース電極(第1の電極)
14 ドレイン電極(第2の電極)
16 窒化アルミニウム層
17 第1のゲート絶縁層(第1の絶縁層)
18 第2のゲート絶縁層(第2の絶縁層)
19 界面領域(領域)
20 ゲート電極
26 ドリフト領域(第1の炭化珪素領域)
27 n型領域(第8の炭化珪素領域)
28 pウェル領域(第2の炭化珪素領域)
28a 第1のpウェル領域(第2の炭化珪素領域)
28b 第2のpウェル領域(第4の炭化珪素領域)
28x 第1の部分
28y 第2の部分
30 ソース領域(第3の炭化珪素領域)
30a 第1のソース領域(第3の炭化珪素領域)
30b 第2のソース領域(第5の炭化珪素領域)
40a 第1のp型領域(第6の炭化珪素領域)
40b 第2のp型領域(第7の炭化珪素領域)
50 第1のトレンチ(トレンチ)
100 縦型トランジスタ(半導体装置)
150 インバータ回路
200 縦型トランジスタ(半導体装置)
500 縦型トランジスタ(半導体装置)
600 縦型トランジスタ(半導体装置)
700 駆動装置
800 車両
900 車両
1000 昇降機
P1 第1の面
P2 第2の面
θ 角度
Claims (20)
- 第1の面と前記第1の面に対向する第2の面とを有する炭化珪素層と、
ゲート電極と、
前記炭化珪素層と前記ゲート電極との間に位置する結晶質の窒化アルミニウム層と、
前記炭化珪素層と前記窒化アルミニウム層との間に位置する第1の絶縁層と、
前記窒化アルミニウム層と前記ゲート電極との間に位置し、前記窒化アルミニウム層よりもバンドギャップの広い第2の絶縁層と、
を備える半導体装置。 - 前記窒化アルミニウム層の厚さは10nmより厚く60nm以下である請求項1記載の半導体装置。
- 前記第1の絶縁層の厚さは0.5nm以上10nm以下である請求項1又は請求項2記載の半導体装置。
- 前記第1の絶縁層は、酸化シリコンを含む請求項1ないし請求項3いずれか一項記載の半導体装置。
- 前記第1の絶縁層の厚さは前記第2の絶縁層の厚さよりも薄い請求項1ないし請求項4いずれか一項記載の半導体装置。
- 前記窒化アルミニウム層はスカンジウム(Sc)、イットリウム(Y)、及び、ランタノイド(La、Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu)から成る群から選ばれる少なくとも一つの元素を含む請求項1ないし請求項5いずれか一項記載の半導体装置。
- 前記炭化珪素層と前記第1の絶縁層との間に位置し、窒素(N)、リン(P)、ヒ素(As)、アンチモン(Sb)、ビスマス(Bi)、スカンジウム(Sc)、イットリウム(Y)、及び、ランタノイド(La、Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu)から成る群から選ばれる少なくとも一つの元素を含む領域を、更に備える請求項1ないし請求項6いずれか一項記載の半導体装置。
- 前記炭化珪素層の中に存在する第1導電型の第1の炭化珪素領域と、
前記炭化珪素層の中に存在し、前記第1の炭化珪素領域と前記第1の面との間に位置する第2導電型の第2の炭化珪素領域と、
前記炭化珪素層の中に存在し、前記第2の炭化珪素領域と前記第1の面との間に位置する第1導電型の第3の炭化珪素領域と、
前記炭化珪素層の前記第1の面の側に位置する第1の電極と、
前記炭化珪素層の前記第2の面の側に位置する第2の電極と、を更に備え、
前記窒化アルミニウム層は、前記第2の炭化珪素領域と前記ゲート電極との間に位置する請求項1ないし請求項7いずれか一項記載の半導体装置。 - 前記窒化アルミニウム層に対向する前記第2の炭化珪素領域の面が、m面に対し0度以上10度以下傾斜した面、又は、a面に対し0度以上10度以下傾斜した面である請求項8記載の半導体装置。
- 前記第2の炭化珪素領域の第2導電型不純物濃度は、5×1017cm−3以上である請求項8又は請求項9記載の半導体装置。
- 前記第2の炭化珪素領域は第1の部分と、前記第1の部分と前記窒化アルミニウム層との間に位置し、前記第1の部分よりも第2導電型不純物濃度の低い第2の部分を有する請求項8ないし請求項10いずれか一項記載の半導体装置。
- 前記第1導電型がn型、前記第2導電型がp型の場合に、前記窒化アルミニウム層に含まれる窒化アルミニウム結晶のc軸方向と、前記第2の炭化珪素領域から前記ゲート電極に向かう方向とのなす角度が90度未満である請求項8ないし請求項11いずれか一項記載の半導体装置。
- 前記角度が45度以下である請求項12記載の半導体装置。
- 前記炭化珪素層はトレンチを有し、
前記ゲート電極は前記トレンチの中に位置する請求項1ないし請求項13いずれか一項記載の半導体装置。 - 第1の面と前記第1の面に対向する第2の面とを有する炭化珪素層と、
前記炭化珪素層の中に存在する第1導電型の第1の炭化珪素領域と、
前記炭化珪素層の中に存在し、前記第1の炭化珪素領域と前記第1の面との間に位置する第2導電型の第2の炭化珪素領域と、
前記炭化珪素層の中に存在し、前記第2の炭化珪素領域と前記第1の面との間に位置する第1導電型の第3の炭化珪素領域と、
前記炭化珪素層の中に存在し、前記第1の炭化珪素領域と前記第1の面との間に位置する第2導電型の第4の炭化珪素領域と、
前記炭化珪素層の中に存在し、前記第4の炭化珪素領域と前記第1の面との間に位置する第1導電型の第5の炭化珪素領域と、
前記炭化珪素層の中に存在し、前記第1の炭化珪素領域と前記第1の面との間に位置し、前記第2の炭化珪素領域と前記第4の炭化珪素領域に接する第2導電型の第6の炭化珪素領域と、
前記炭化珪素層の中に存在し、前記第1の炭化珪素領域と前記第1の面との間に位置する第2導電型の第7の炭化珪素領域と、
前記炭化珪素層の中に存在し、前記第1の炭化珪素領域と前記第1の面との間に位置し、前記第2の炭化珪素領域と前記第4の炭化珪素領域との間に位置し、前記第6の炭化珪素領域と前記第7の炭化珪素領域との間に位置し、前記第6の炭化珪素領域と前記第1の面との間に位置し、前記第7の炭化珪素領域と前記第1の面との間に位置する第1導電型の第8の炭化珪素領域と、
前記炭化珪素層の前記第1の面の側に位置する第1の電極と、
前記炭化珪素層の前記第2の面の側に位置する第2の電極と、
前記炭化珪素層の前記第1の面の側に位置するゲート電極と、
前記第2の炭化珪素領域及び前記第4の炭化珪素領域と、前記ゲート電極との間に位置する結晶質の窒化アルミニウム層と、
前記炭化珪素層と前記窒化アルミニウム層との間に位置する第1の絶縁層と、
前記窒化アルミニウム層と前記ゲート電極との間に位置し、前記窒化アルミニウム層よりもバンドギャップの広い第2の絶縁層と、
を備える半導体装置。 - 前記第1の絶縁層の厚さは0.5nm以上10nm以下である請求項15記載の半導体装置。
- 請求項1ないし請求項16いずれか一項記載の半導体装置を備えるインバータ回路。
- 請求項1ないし請求項16いずれか一項記載の半導体装置を備える駆動装置。
- 請求項1ないし請求項16いずれか一項記載の半導体装置を備える車両。
- 請求項1ないし請求項16いずれか一項記載の半導体装置を備える昇降機。
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